© 2009 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 300 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ300 V
VGSS Continuous ± 20 V
VGSM Transient ± 30 V
ID25 TC= 25°C 120 A
IDM TC= 25°C, Pulse Width Limited by TJM 330 A
IATC= 25°C30A
EAS TC= 25°C 2.5 J
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns
PDTC= 25°C 960 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-264) 1.13/10 Nm/lb.in.
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 300 V
VGS(th) VDS = VGS, ID = 4mA 2.5 5.0 V
IGSS VGS = ± 20V, VDS = 0V ± 200 nA
IDSS VDS = VDSS, VGS= 0V 50 µA
TJ = 125°C 3 mA
RDS(on) VGS = 10V, ID = 60A, Note 1 24 mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK120N30T
IXFX120N30T
VDSS = 300V
ID25 = 120A
RDS(on) ≤≤
≤≤
≤ 24mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 200ns
DS100132(03/09)
G = Gate D = Drain
S = Source TAB = Drain
PLUS247 (IXFX)
TO-264 (IXFK)
S
G
D(TAB)
(TAB)
Features
zInternational Standard Packages
zHigh Current Handling Capability
zFast Intrinsic Diode
zAvalanche Rated
zLow RDS(on)
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zDC-DC Converters
zBattery Chargers
zSwitched-Mode and Resonant-Mode
Power Supplies
zDC Choppers
zAC Motor Drives
zUninterruptible Power Supplies
zHigh Speed Power Switching
Applications
GigaMOSTM
Power MOSFET
Advance Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK120N30T
IXFX120N30T
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1 70 120 S
Ciss 20 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1380 pF
Crss 135 pF
td(on) 32 ns
tr 31 ns
td(off) 87 ns
tf23 ns
Qg(on) 265 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 87 nC
Qgd 60 nC
RthJC 0.13 °C/W
RthCS 0.15 °C/W
Note 1: Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
TO-264 (IXFK) Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM (IXFX) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 120 A
ISM Repetitive, Pulse Width Limited by TJM 480 A
VSD IF = 60A, VGS = 0V, Note 1 1.5 V
trr 200 ns
QRM 0.8 µC
IRM 10.4 A
IF = 60A, -di/dt = 100A/µs
VR = 75V, VGS = 0V
Resistive Switching Times
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
© 2009 IXYS CORPORATION, All rights reserved
IXFK120N30T
IXFX120N30T
Fi g . 1. Ou tp u t C h ar acter i sti cs
@ 25ºC
0
10
20
30
40
50
60
70
80
90
100
110
120
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
V
DS
- Vo lts
I
D
- A mpe re s
V
GS
= 10V
7V
6
V
5
V
Fi g. 2. Extend ed Outp u t C har acter i stics
@ 25º C
0
50
100
150
200
250
300
0 2 4 6 8101214161820
V
DS
- Volts
I
D
- A mpe re s
V
GS
= 10V
8V
5
V
6
V
7
V
Fig. 3. Output Characteristics
@ 125ºC
0
10
20
30
40
50
60
70
80
90
100
110
120
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
V
DS
- Volts
I
D
- Am peres
V
GS
= 10V
7V
6
V
5
V
Fig. 4. RDS(on) Normalized to ID = 60A Value
vs. Junction Tem perature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- N ormalize d
V
GS
= 10V
I
D
= 120A
I
D
= 60A
Fig. 5. RDS(on) Normalized to ID = 60A Val u e
vs. D r ain Cu r r en t
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0 20 40 60 80 100 120 140 160 180 200 220 240 260 280
I
D
- Amp e res
R
DS(on)
- N ormalize d
V
GS
= 10
V
T
J
= 125ºC
T
J
= 25ºC
Fi g . 6. Maximu m Drai n Cu r r ent vs.
Case Temp er atu r e
0
20
40
60
80
100
120
140
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- A mpe re s
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK120N30T
IXFX120N30T
IXYS REF: F_120N30T(9W)3-23-09
Fig. 7. Input Adm ittance
0
20
40
60
80
100
120
140
160
180
200
3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8
V
GS
- Volts
I
D
- A mpe re s
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
180
200
0 20 40 60 80 100 120 140 160 180 200
I
D
- A mper es
g
f s
- S ie men s
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
In t r i n si c D i o d e
0
50
100
150
200
250
300
350
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V
SD
- Volts
I
S
- A m p e res
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 30 60 90 120 150 180 210 240 270
Q
G
- NanoCoulombs
V
GS
- V o lts
V
DS
= 150V
I
D
= 60A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - P icoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1.0
10.0
100.0
1,000.0
1 10 100 1000
V
DS
- Volts
I
D
- A m p e res
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(
on
)
Limit
© 2009 IXYS CORPORATION, All rights reserved
IXFK120N30T
IXFX120N30T
IXYS REF: F_120N30T(9W)3-23-09
Fig. 13. Maxim um T r ansient Thermal Impedance
0.00
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
