Feb.1999
FS10KMH-03 OUTLINE DRAWING Dimensions in mm
TO-220FN
MITSUBISHI Nch POWER MOSFET
FS10KMH-03
HIGH-SPEED SWITCHING USE
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC conver ter, etc.
V
V
A
A
A
A
A
W
°C
°C
V
g
30
±10
10
40
10
10
40
15
–55 ~ +150
–55 ~ +150
2000
2.0
VGS = 0V
VDS = 0V
L = 30µH
AC for 1minute, Terminal to case
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Viso—
Symbol
MAXIMUM RATINGS (Tc = 25°C)
Parameter Conditions Ratings Unit
¡2.5V DRIVE
¡VDSS .................................................................................. 30V
¡rDS (ON) (MAX) ..............................................................92mΩ
¡ID ......................................................................................... 10A
¡Integrated Fast Recovery Diode (TYP.) ............. 35ns
¡Viso ................................................................................ 2000V
15 ± 0.314 ± 0.5
10 ± 0.3 2.8 ± 0.2
f 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
4.5 ± 0.2
0.75 ± 0.15
3 ± 0.33.6 ± 0.3
6.5 ± 0.3
123
q GATE
w DRAIN
e SOURCE
E
w
q
e
Feb.1999
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
MITSUBISHI Nch POWER MOSFET
FS10KMH-03
HIGH-SPEED SWITCHING USE
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
30
—
—
0.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.9
68
88
0.34
12
540
160
55
12
35
45
40
1.0
—
35
—
±0.1
0.1
1.2
92
141
0.46
—
—
—
—
—
—
—
—
1.5
8.3
—
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol UnitParameter Test conditions Limits
Min. Typ. Max.
ID = 1mA, VGS = 0V
VGS = ±10V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 4V
ID = 5A, VGS = 2.5V
ID = 5A, VGS = 4V
ID = 5A, VDS = 5V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 5A, VGS = 4V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
IS = 5A, dis/dt = –50A/µs
0
4
8
12
16
20
0 20050 100 150
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
2
3
5
210
0
357 2 10
1
357 2 2
10
2
357
5
7
tw = 10ms
T
C
= 25°C
Single Pulse
100ms
10ms
1ms
DC
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
0
4
8
12
16
20
0 0.4 0.8 1.2 1.6 2.0
P
D
= 15W
V
GS
= 5V
Tc = 25°C
Pulse Test
2.5V
1.5V
2V
3V
4V
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1.0
3V
2V
2.5V
1.5V
4V
V
GS
= 5V
Tc = 25°C
Pulse Test
PERFORMANCE CURVES
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10KMH-03
HIGH-SPEED SWITCHING USE
0
20
40
60
80
100
10
–1
210
0
357 2 10
1
357 2 10
2
357
V
GS
= 2.5V
Tc = 25°C
Pulse Test
4V
0
8
16
24
32
40
0 1.0 2.0 3.0 4.0 5.0
Tc = 25°C
V
DS
= 10V
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
0 1.0 2.0 3.0 4.0 5.0
I
D
= 15A
Tc = 25°C
Pulse Test
10A
5A
10
2
3
5
7
10
3
2
3
5
7
10
4
2
3
2
5
7
10
0
210
1
357357 2 10
2
357 23
2
Ciss
Coss
Crss
Tch = 25°C
f = 1MH
Z
V
GS
= 0V
10
0
10
1
23457 10
2
23457
10
0
10
1
2
3
4
5
7
10
2
2
3
4
5
7
t
d(off)
t
d(on)
t
r
Tch = 25°C
V
DD
= 15V
V
GS
= 4V
R
GEN
= R
GS
= 50Ω
t
f
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(mΩ)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
10
0
10
1
23457 10
2
23457
10
0
10
1
2
3
4
5
7
10
2
2
3
4
5
7
T
C
= 25°C 75°C
125°C
V
DS
= 5V
Pulse Test
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10KMH-03
HIGH-SPEED SWITCHING USE
0
1.0
2.0
3.0
4.0
5.0
0246810
V
DS
= 10V
20V
25V
Tch = 25°C
I
D
= 10A
0
8
16
24
32
40
0 0.4 0.8 1.2 1.6 2.0
T
C
= 125°C
75°C
25°C
V
GS
= 0V
Pulse Test
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(ch–c)
(°C/W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
10
–1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
–50 0 50 100 150
V
GS
= 4V
I
D
= 1/2I
D
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
–50 0 50 100 150
V
DS
= 10V
I
D
= 1mA
0.4
0.6
0.8
1.0
1.2
1.4
–50 0 50 100 150
V
GS
= 0V
I
D
= 1mA
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
–4
23 57 23 57 23 57 23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
P
DM
tw
D
=
T
tw
T
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
