MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay General Semiconductor
Document Number: 88786
Revision: 18-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode High-Voltage Schottky Rectifier
Low Leakage Current 5.0 µA
FEATURES
• Guarding for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling and
polarity protection applications.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Mounting Torque: 10 in-lbs maximum
Polarity: As marked
PRIMARY CHARACTERISTICS
IF(AV) 2 x 10 A
VRRM 200 V
IFSM 290 A
VF0.75 V
TJ175 °C
TO-262AA
MBR20H200CT MBRF20H200CT
SB20H200CT-1
CASE
PIN 2
PIN 1
PIN 3
1
12
2 3
3
TO-220AB
123
ITO-220AB
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR20H200CT UNIT
Maximum repetitive peak reverse voltage VRRM 200 V
Working peak reverse voltage VRWM 200 V
Maximum DC blocking voltage VDC 200 V
Maximum average forward rectified current total device
per diode IF(AV) 20
10 A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode IFSM 290 A
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz IRRM 1.0 A
Peak non-repetitive reverse surge energy per diode (8/20 µs waveform) ERSM 20 mJ
Non-repetitive avalanche energy per diode at 25 °C, IAS = 2.0 A, L = 10 mH EAS 20 mJ
Electrostatic discharge capacitor voltage
human body model air discharge: C = 100 pF, R 0 1.5 kΩVC 25 kV
Voltage rate of change (rated VR) dV/dt 10 000 V/µs
Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 minute VAC 1500 V
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88786
Revision: 18-Apr-08
2
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER TEST SYMBOL TYP. MAX. UNIT
Maximum instantaneous
forward voltage per diode (1)
IF = 10 A
IF = 10 A
IF = 20 A
IF = 20 A
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
VF
0.81
0.65
0.87
0.74
0.88
0.75
0.97
0.85
V
Maximum reverse current per
diode at working peak reverse
voltage (1)
TJ = 25 °C
TJ = 125 °C IR 5.0
1.0
µA
mA
Typical junction capacitance 4.0 V, 1 MHz CJ 250 pF
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR MBRF SB UNIT
Typical thermal resistance per diode RθJC 2.0 4.0 2.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR20H200CT-E3/45 2.06 45 50/tube Tube
ITO-220AB MBRF20H200CT-E3/45 2.20 45 50/tube Tube
TO-262AA SB20H200CT-1E3/45 1.58 45 50/tube Tube
Figure 1. Forward Derating Curve (Total)
0
5
10
15
20
25
MBRF
MBR, MBRB
25 50 75 100 125 150 175
Case Temperature (°C)
Average Forward Current (A)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
25
50
75
100
125
150
175
200
225
250
275
300
325
350
1 10 100
Number of Cycles at 60 Hz
Average Forward Current (A)
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay General Semiconductor
Document Number: 88786
Revision: 18-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
100
10
0.1
1
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 125 °C
T
J
= 175 °C
T
J
= 25 °C
T
J
= 75 °C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.80.9 1.0 1.1
0.1
0.01
1
10
100
1000
Percent of Rated Peak Reverse Voltage (%)
10 000
T
J
= 125 °C
T
J
= 175 °C
T
J
= 25 °C
T
J
= 75 °C
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (µA)
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
100
1000
10 000
0.1 1 10 100
10
Reverse Voltage (V)
Junction Capacitance (pF)
0.01 101 100
10
100
0.1
0.1
1
MBRF
MBR, MBRB
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88786
Revision: 18-Apr-08
4
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.398 (10.10)
0.382 (9.70)
0.055 (1.40)
0.047 (1.20) 0.343 (8.70)
TYP.
0.067 (1.70)
TYP.
0.331 (8.40)
TYP.
0.150 (3.80)
0.139 (3.54)
DIA.
0.114 (2.90)
0.106 (2.70)
0.634 (16.10)
0.618 (15.70)
PIN
23
1
0.118 (3.00)
TYP.
0.035 (0.90)
0.028 (0.70)
0.064 (1.62)
0.056 (1.42)
0.200 (5.08) TYP.
0.100 (2.54)
TYP.
0.638 (16.20)
0.598 (15.20)
0.055 (1.40)
0.049 (1.25)
0.185 (4.70)
0.169 (4.30)
0.154 (3.90)
0.138 (3.50)
0.370 (9.40)
0.354 (9.00)
0.523 (13.28)
0.507 (12.88)
0.102 (2.60)
0.087 (2.20)
1.161 (29.48)
1.106 (28.08)
0.024 (0.60)
0.018 (0.45)
0.024 (0.60)
0.018(0.45)
0.138(3.50)
0.122 (3.10)
1.29 (3.28)
1.21 (3.08)
0.100
(2.54) TYP. 0.200 (5.08) TYP.
0.058(1.47) MAX.
0.024 (0.60)
0.039 (1.00)
0.108 (2.74)
0.092 (2.34)
0.117 (2.96)
0.101 (2.56)
0.633 (16.07)
0.601 (15.67)
0.630 (16.00)
0.614 (15.60)
DIA.
0.320 (8.12)
0.304 (7.72)
0.396 (10.05)
0.372 (9.45)
12
3
PIN
0.408(10.36)
0.392 (9.96)
ITO-220AB
0.270 (6.88)
0.255 (6.48)
0.264 (6.70)
0.248(6.50)
0.193 (4.90)
0.177 (4.50)
0.370 (9.40)
0.354 (9.00)
0.523 (13.28)
0.507 (12.88)
0.425 (10.80)
0.393 (10.00)
0.102 (2.60)
0.087 (2.20)
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.049 (1.25)
0.024 (0.60)
0.018(0.45)
0.405 (10.28)
0.389 (9.88)
0.062 (1.57)
0.054 (1.37)
0.055 (1.40)
0.039 (1.00)
0.488 (12.4)
0.472 (12.00)
12
K
3
PIN
0.100
(2.54) TYP. 0.200 (5.08)TYP.
0.028(0.70)
0.035 (0.90)
0.398(10.10)
0.382 (9.70)
TO-262AA
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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