BU406, BU407
NPN SILICON POWER TRANSISTORS
1
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●7 A Continuous Collector Current
●15 A Peak Collector Current
●60 W at 25°C Case Temperature
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0) BU406
BU407 VCBO
400
330 V
Collector-emitter voltage (VBE = -2 V) BU406
BU407 VCEX
400
330 V
Collector-emitter voltage (IB = 0) BU406
BU407 VCEO
200
150 V
Emitter-base voltage VEB 6V
Continuous collector current IC7A
Peak collector current (see Note 1) ICM 15 A
Continuous base current IB4A
Continuous device dissipation at (or below) 25°C case temperature Ptot 60 W
Operating junction temperature range Tj-55 to +150 °C
Storage temperature range Tstg -55 to +150 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
BU406, BU407
NPN SILICON POWER TRANSISTORS
2
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
4. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [h
FE] = 1.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CEO
Collector-emitter
breakdown voltage IC = 30 mA IB=0 140 V
ICES
Collector-emitter
cut-off current
VCE = 400 V
VCE = 330 V
VCE = 250 V
VCE = 200 V
VCE = 250 V
VCE = 200 V
VBE =0
VBE =0
VBE =0
VBE =0
VBE =0
VBE =0
TC = 150°C
TC = 150°C
BU406
BU407
BU406
BU407
BU406
BU407
5
5
0.1
0.1
1
1
mA
IEBO
Emitter cut-off
current VEB = 6 V IC=0 1 mA
hFE
Forward current
transfer ratio
VCE = 10 V
VCE = 10 V
IC= 4A
IC= 0.5A (see Notes 2 and 3) 12
20
VCE(sat)
Collector-emitter
saturation voltage IB = 0.5 A IC= 5 A (see Notes 2 and 3) 1 V
VBE(sat)
Base-emitter
saturation voltage IB = 0.5 A IC= 5 A (see Notes 2 and 3) 1.2 V
ft
Current gain
bandwidth product VCE = 5 V IC= 0.5 A f = 1 MHz (see Note 4) 6 MHz
Cob Output capacitance VCB = 20 V IE=0 f = 1 MHz 60 pF
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 2.08 °C/W
RθJA Junction to free air thermal resistance 70 °C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS †MIN TYP MAX UNIT
tsStorage time IC = 5 A IB(end) = 0.5A (see Figures 1 and 2) 2.7 µs
t(off) Turn off time 750 ns
BU406, BU407
NPN SILICON POWER TRANSISTORS
3
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
PARAMETER MEASUREMENT INFORMATION
Figure 1. Inductive-Load Switching Test Circuit
Figure 2. Inductive-Load Switching Waveforms
Current
Probes
0
+4V
Vcc = 24V
47
Ω
100
Ω
100
Ω
50
Ω
22
Ω
22
Ω
1 k
Ω
22
Ω
5.6
Ω
7.5
Ω
µ
H
14.8
µ
H
240
5 pF
2N5337
2N6191
TIP31
TIP31
TIP31
TIP32
TIP32
TUT
BY205
BY205
OUTPUT
VBB+
VBB-
SET
IB
INPUT
ts
IB(end)
µ
s
64
42
µ
s
50%
IB
IC
VCE
0
0
03 V
Vfly
toff
0.1 A
toff is the time for the collector
current IC to decrease to 0.1 A
after the collector to emitter
voltage VCE has risen 3 V into
its flyback excursion.
BU406, BU407
NPN SILICON POWER TRANSISTORS
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 3. Figure 4.
Figure 5.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·1 1·0 10
hFE - Typical DC Current Gain
0
10
20
30
40
50
60
70 TCD124AA
TC = 100°C
TC = 25°C
TC = -55°C
tp < 300 µs
d < 2%
VCE = 5 V
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·1 1·0 10
hFE - Typical DC Current Gain
0
10
20
30
40
50 TCD124AB
VCE = 1 V
VCE = 5 V
VCE = 10 V
TC = 25°C
tp < 300 µs
d < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
CASE TEMPERATURE
TC - Case Temperature - °C
-60 -40 -20 0 20 40 60 80 100 120 140 160
VCE(sat) - Collector-Emitter Saturation Voltage - V
0
0·1
0·2
0·3
0·4
0·5
0·6
0·7
0·8 TCD124AC
IC = 8 A
IB = 2 A
IC = 4 A
IB = 0.5 A
tp < 300 µs
d < 2%
BU406, BU407
NPN SILICON POWER TRANSISTORS
5
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 6.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
1·0 10 100 1000
IC - Collector Current - A
0.01
0·1
1·0
10 SAD124AA
BU407
BU406
