IGBT MODULE Spec.No.IGBT-SP-09017 R5 MBN1200H45E2-H P1 Preliminary Specification Silicon N-channel IGBT 4500V E2 version FEATURES Low switching loss IGBT module. Low noise due to ultra soft fast recovery diode. High reliability, high durability module. High thermal fatigue durability. (delta Tc=70C, N>30,000cycles) Isolated heat sink (terminal to base). o ABSOLUTE MAXIMUM RATINGS (Tc=25 C ) Item Symbol Collector Emitter Voltage Gate Emitter Voltage VCES VGES DC IC Collector Current 1ms ICp DC IF Forward Current 1ms IFM Junction Temperature Tj Storage Temperature Tstg Isolation Voltage VISO Terminals (M4/M8) Screw Torque Mounting (M6) Notes: (1) Recommended Value 1.80.2/91N*m Unit MBN1200H45E2-H V V 4,500 20 o 1,200 (Tc=80 C) A 2,400 1,200 A 2,400 o C -40 ~ +125 o C -50 ~ +125 VRMS 8,400 (AC 1 minute) 2/10 (1) N*m 6 (2) (2) Recommended Value 5.50.5N*m ELECTRICAL CHARACTERISTICS Item Collector Emitter Cut-Off Current Gate Emitter Leakage Current Collector Emitter Saturation Voltage Gate Emitter Threshold Voltage Input Capacitance Internal Gate Resistance Rise Time Turn On Time Switching Times Fall Time Turn Off Time Peak Forward Voltage Drop Reverse Recovery Time Turn On Loss Turn Off Loss Reverse Recovery Loss Thermal Impedance IGBT FWD Symbol Unit Min. Typ. Max. Test Conditions 25 4.2 6.4 165 0.8 2.1 2.7 2.4 4.8 3.7 25 100 +500 4.7 7.4 4.2 5.4 3.6 7.2 4.2 VCE=4,500V, VGE=0V, Tj=25 C o VCE=4,500V, VGE=0V, Tj=125 C o VGE=20V, VCE=0V, Tj=25 C o IC=1200A, VGE=15V, Tj=125 C o VCE=10V, IC=1200mA, Tj=25 C o VCE=10V,VGE=0V, f=100kHz, Tj=25 C o VCE=10V,VGE=0V, f=100kHz, Tj=25 C VCC=2,600V, Ic=1200A Ls=150nH RG=3.3 (3) o VGE=+/-15V, Tj=125 C o IF=1200A, VGE=0V, Tj=125 C Vcc=2600V, IF=1200A, Ls=150nH o Tj=125 C I CES mA IGES VCE(sat) VGE(TO) Cies Rge tr ton tf toff VFM nA V V nF V -500 TBD 5.4 TBD trr s - 0.7 1.4 - 3.2 3.8 3.2 3.8 2.5 2.8 - 4.8 4.8 3.7 0.0085 0.017 Eon(10%) Eon(full) Eoff(10%) Eoff(full) Err(10%) Err(full) Rth(j-c) Rth(j-c) s J/p J/ p J/ p K/W o VCC=2600V, Ic= IF=1200A, Ls=150nH RG= 3.3 (3) o VGE=+/-15V, Tj=125 C Junction to case Case to fin (grease=1W/(m K), Heat-sink flatness 50um) Notes:(3) RG value is the test condition's value for evaluation of the switching times, not recommended value. Please, determine the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. Contact Thermal Impedance Rth(c-f) K/W - http://store.iiic.cc/ 0.005 - IGBT MODULE Spec.No.IGBT-SP-09017 R5 MBN1200H45E2-H P2 Preliminary Specification DEFINITION OF TEST CIRCUIT Ls LLOAD Vcc Rg G/D Fig.1 Switching test circuit Ic Vce VL Ls= VL t 0 dIc ( d )t=t L tL Fig.2 Definition of Ls Ic Ic Vce 90% Vce Vce 0.1Vce 90% Irm 0 0 Vge 10% t1 10% 10% 10% t t tr ton t3 t4 0 0 10% t t Vge 90% t tf trr IF -Ic toff t2 t5 t7 t4 t8 t6 t9 t8 Eon(10%)= IcVce dt Eon(Full)= 0.5Irm 0.1IF 0 Eoff(10%)= IcVce dt t11 t12 Err(10%)= IFVce dt t3 t7 t11 t2 t6 t10 IcVce dt Eoff(Full)= IcVce dt t1 t5 Fig.3 Definition of switching loss http://store.iiic.cc/ t12 t10 Err(Full)= IFVce dt t9 IGBT MODULE Spec.No.IGBT-SP-09017 R5 MBN1200H45E2-H P3 Preliminary Specification STATIC CHARACTERISTICS Typical VGE=17V 15V 13V 2400 Typical VGE=17V 15V 13V 2400 o o Tj=25 C Tj=125 C 2200 2200 2000 2000 1800 1800 Collector Curent , Ic (A) Collector Curent , Ic (A) 11V 1600 1400 1200 1000 800 1600 11V 1400 1200 1000 800 9V 600 600 9V 400 400 200 200 7V 0 0 2 4 6 8 10 0 Collector to Emitter Voltage, VCE(V) VGE=0V 2200 2000 Tj=25oC 1800 Tj=125oC Forward Curent , IF (A) 1600 1400 1200 1000 800 600 400 200 0 1 2 3 4 4 6 Ic vs. VCE(Tj=125oC) Typical Typical 0 2 5 8 Collector to Emitter Voltage, VCE(V) Ic vs. VCE(Tj=25oC) 2400 7V 0 6 Forward Voltage, VF(V) IF vs. VF http://store.iiic.cc/ 10 IGBT MODULE P4 Spec.No.IGBT-SP-09017 R5 MBN1200H45E2-H Preliminary Specification DYNAMIC CHARACTERISTICS 10 10 Typical Conditions Ls=150nH Vcc=2600V VG=+15V/-15V RG=3.3 Ls=150nH Vcc=2600V VG=+15V/-15V RG=3.3 o o Tj=125 C Tj=125 C Eon(full) Turn-off Loss, Eoff (J/pulse) Turn-on Loss, Eon (J/pulse) Typical Conditions 5 Eoff(full) 5 Eon(10%) Eoff(10%) 0 0 500 1000 1500 2000 0 2500 0 Collector Current, IC(A) 500 Turn-on loss vs. Collector current 10 2000 10 2500 Typical Conditions Ls=150nH Vcc=2600V VG=+15V/-15V RG=3.3 Ls=150nH Vcc=2600V VG=+15V/-15V RG=3.3 o o Tj=125 C Switching time, ton,tr,toff,tf,trr (us) Tj=125 C Reverse Recovery Loss, Err (J/pulse) 1500 Turn-off loss vs. Collector current Typical Conditions 1000 Collector Current, IC(A) 5 Err(full) toff 5 tf ton tr Err(10%) trr 0 0 0 500 1000 1500 2000 2500 0 500 1000 1500 2000 Collector Current, IC,IF(A) Forward Current, IF(A) Recovery loss vs. Forward current http://store.iiic.cc/ Switching time vs. Collector current 2500 IGBT MODULE Spec.No.IGBT-SP-09017 R5 MBN1200H45E2-H Preliminary Specification TRANSIENT THERMAL IMPEDANCE Target 0.1 FWD IGBT Zth (K/W) 0.01 0.001 0.0001 0.001 0.01 0.1 Time (s) 1 Transient Thermal Impedance Curve 10 (Maximum Value) Negative environmental impact material Please note that following materials are contained in the product In order to keep characteristics and reliability level. Material Contained part Lead (Pb) and its compounds Solder Arsenic and its compounds Si chip http://store.iiic.cc/ P5 IGBT MODULE Spec.No.IGBT-SP-09017 R5 MBN1200H45E2-H P6 Preliminary Specification Module Outline Drawing Unit: mm Weight: 1550(g) CIRCUIT DIAGRAM C C C C E E E G E TERMINALS http://store.iiic.cc/ IGBT MODULE Spec.No.IGBT-SP-09017 R5 MBN1200H45E2-H QG-VGE Curve TYPICAL Conditions: Ls=150nH,VCC=2600V,VGE=+/-15V, /27 ,Tj=25 oC, RG(on/off)=27 15 10 VGE (V) 5 0 -5 -10 -15 -10 -8 -6 -4 -2 0 2 QG (uC) 4 6 8 10 QG-VGE curve Cies, Coes, Cres Curve TYPICAL 1000 Conditions Tj=25 f=100kHz Cies Cies, Coes, Cres (nF) 100 10 Coes Cres 1 0.1 1 10 100 Collector to Emitter Voltage, VCE (V) Capacitance vs. Collector to Emitter Voltage http://store.iiic.cc/ P7 Preliminary Specification IGBT MODULE Spec.No.IGBT-SP-09017 R5 MBN1200H45E2-H Preliminary Specification HITACHI POWER SEMICONDUCTORS Notices 1. 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