MBN1200H45E2-H - Hitachi

IGBT MODULE

Spec.No.IGBT-SP-09017 R5

P

1

MBN1200H45E2-H

Preliminary

Specification

Silicon N-channel IGBT 4500V E2 version

FEATURES

∗ Low switching loss IGBT module.

∗ Low noise due to ultra soft fast recovery diode.

∗ High reliability, high durability module.

∗ High thermal fatigue durability.

(delta Tc=70°C, N>30,000cycles)

∗ Isolated heat sink (terminal to base).

ABSOLUTE MAXIMUM RATINGS (Tc=25

oC

)

Item Symbol Unit MBN1200H45E2-H

Collector Emitter Voltage V

CES

V 4,500

Gate Emitter Voltage V

GES

V ±20

DC I

C

1,200 (Tc=80

o

C)

Collector Current 1ms I

Cp

A 2,400

DC I

F

1,200

Forward Current 1ms I

FM

A 2,400

Junction Temperature T

j

o

C -40 ~ +125

Storage Temperature T

stg

o

C -50 ~ +125

Isolation Voltage V

ISO

V

RMS

8,400 (AC 1 minute)

Terminals

(M4/M8)

- 2/10 (1)

Screw Torque Mounting

(M6)

- N·m 6 (2)

Notes: (1) Recommended Value 1.8±0.2/9±1N·m (2) Recommended Value 5.5±0.5N·m

ELECTRICAL CHARACTERISTICS

Item Symbol

Unit Min.

Typ.

Max.

Test Conditions

- - 25 V

CE

=4,500V, V

GE

=0V, Tj=25

o

C

Collector Emitter Cut-Off Current I

CES

mA - 25 100

V

CE

=4,500V, V

GE

=0V, Tj=125

o

C

Gate Emitter Leakage Current I

GES

nA -500

- +500

V

GE

=±20V, V

CE

=0V, Tj=25

o

C

Collector Emitter Saturation Voltage V

CE(sat)

V TBD

4.2 4.7 I

C

=1200A, V

GE

=15V, Tj=125

o

C

Gate Emitter Threshold Voltage V

GE(TO)

V 5.4 6.4 7.4 V

CE

=10V, I

C

=1200mA, Tj=25

o

C

Input Capacitance C

ies

nF - 165

- V

CE

=10V,V

GE

=0V, f=100kHz, Tj=25

o

C

Internal Gate Resistance Rge Ω - 0.8 - V

CE

=10V,V

GE

=0V, f=100kHz, Tj=25

o

C

Rise Time t

r

- 2.1 4.2 V

CC

=2,600V, Ic=1200A

Turn On Time

t

on

- 2.7 5.4 Ls=150nH

Fall Time t

f

- 2.4 3.6 R

G

=3.3

Ω

(3)

Switching Times

Turn Off Time t

off

µs

- 4.8 7.2 V

GE

=+/-15V, Tj=125

o

C

Peak Forward Voltage Drop V

FM

V TBD

3.7 4.2 IF=1200A, V

GE

=0V, Tj=125

o

C

Reverse Recovery Time t

rr

µs - 0.7 1.4 Vcc=2600V, IF=1200A, Ls=150nH

Tj=125

o

C

E

on(10%)

- 3.2 4.8

Turn On Loss E

on(full)

J/p - 3.8 -

E

off(10%)

- 3.2 4.8

Turn Off Loss E

off(full)

J/ p - 3.8 -

E

rr(10%)

- 2.5 3.7

Reverse Recovery Loss E

rr(full)

J/ p - 2.8 -

V

CC

=2600V, Ic= IF=1200A, Ls=150nH

R

G

= 3.3

Ω

(3)

V

GE

=+/-15V, Tj=125

o

C

IGBT Rth(j-c)

- - 0.0085

Thermal Impedance

FWD Rth(j-c)

K/W - - 0.017

Junction to case

Contact Thermal Impedance

Rth(c-f)

K/W - 0.005

- Case to fin (λgrease=1W/(m

･

K),

Heat-sink flatness ≤50um)

Notes:(3) R

G

value is the test condition’s value for evaluation of the switching times, not recommended value.

Please, determine the suitable R

G

value after the measurement of switching waveforms

(overshoot voltage, etc.) with appliance mounted.

* Please contact our representatives at order.

* For improvement, specifications are subject to change without notice.

* For actual application, please confirm this spec sheet is the newest revision.

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IGBT MODULE

Spec.No.IGBT-SP-09017 R5

P

2

MBN1200H45E2-H

Preliminary

Specification

DEFINITION OF TEST CIRCUIT

Fig.2 Definition of Ls

Fig.1 Switching test circuit

Ic

t

0

VL

tL

Vce

t=t

L

Ls=

V

L

dIc

d

ｔ

( )

Fig.3 Definition of switching loss

t4

t3

Ic

ton

tr

Vge

10%

90%

Vce

t

0

t

0

t1

t2

Eon(10%)=

∫

Ic･

Vce dt

t4

t3

Eon(Full)=

∫

Ic･Vce dt

t2

t1

t5

90%

Vge

Vce

Ic

10%

toff

tf

t8

t7

t0

t6

Eoff(10%)=

∫

Ic･

Vce dt

t8

t7

Eoff(Full)=

∫

Ic･

Vce dt

t6

t5

t12

t11

Err(10%)=

∫

IF･

Vce dt

Err(Full)=

∫

IF･

Vce dt

t10

t9

0.1IF

t9

t10

Vce

0.1Vce

0.5Irm

Irm

-Ic

trr

t12

t11

t

0

IF

Vcc

Ls

L

LOAD

Rg

G/D

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IGBT MODULE

Spec.No.IGBT-SP-09017 R5

P

3

MBN1200H45E2-H

Preliminary

Specification

STATIC CHARACTERISTICS

0

200

400

600

800

1000

1200

1400

1600

1800

2000

2200

2400

0 1 2 3 4 5 6

Forward Voltage, VF(V)

Forward Curent , IF (A)

Tj=25oC

Tj=125oC

VGE=0V

0

200

400

600

800

1000

1200

1400

1600

1800

2000

2200

2400

0 2 4 6 8 10

Collector to Emitter Voltage, VCE(V)

Collector Curent , Ic (A)

VGE=17V 15V 13V

11V

9V

7V

Tj=125

o

C

0

200

400

600

800

1000

1200

1400

1600

1800

2000

2200

2400

0 2 4 6 8 10

Collector to Emitter Voltage, VCE(V)

Collector Curent , Ic (A)

VGE=17V 15V 13V

11V

9V

7V

Tj=25

o

C

Typical

TypicalTypical

Typical

TypicalTypical

Typical

Ic vs. VCE(Tj=25

o

C) Ic vs. VCE(Tj=125

o

C)

IF vs. VF

Ty

TyTy

Typical

picalpical

pical

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IGBT MODULE

Spec.No.IGBT-SP-09017 R5

P

4

MBN1200H45E2-H

Preliminary

Specification

DYNAMIC CHARACTERISTICS

0

5

10

0 500 1000 1500 2000 2500

Collector Current, I

C,IF

(A)

Switching time, ton,tr,toff,tf,trr (us)

【

【【

【

Conditions

】

】】

】

Ls=150nH

Vcc=2600V

VG=+15V/-15V

RG=3.3Ω

Tj=125

o

C

toff

tf ton

tr

trr

Turn-on loss vs. Collector current

0

5

10

0 500 1000 1500 2000 2500

Collector Current, I

C

(A)

Turn-on Loss, Eon (J/pulse)

【

【【

【

Conditions

】

】】

】

Ls=150nH

Vcc=2600V

VG=+15V/-15V

RG=3.3Ω

Tj=125

o

C

Eon(full)

Eon(10%)

0

5

10

0 500 1000 1500 2000 2500

Collector Current, I

C

(A)

Turn-off Loss, Eoff (J/pulse)

【

【【

【

Conditions

】

】】

】

Ls=150nH

Vcc=2600V

VG=+15V/-15V

RG=3.3Ω

Tj=125

o

C

Eoff(full)

Eoff(10%)

Turn-off loss vs. Collector current

0

5

10

0 500 1000 1500 2000 2500

Forward Current, IF(A)

Reverse Recovery Loss, Err (J/pulse)

【

【【

【

Conditions

】

】】

】

Ls=150nH

Vcc=2600V

VG=+15V/-15V

RG=3.3Ω

Tj=125

o

C

Err(full)

Err(10%)

Recovery loss vs. Forward current

Typical

TypicalTypical

Typical

TypicalTypical

Typical

TypicalTypical

Typical

Switching time vs. Collector current

Typical

TypicalTypical

Typical

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IGBT MODULE

Spec.No.IGBT-SP-09017 R5

P

5

MBN1200H45E2-H

Preliminary

Specification

TRANSIENT THERMAL IMPEDANCE

Transient Thermal Impedance Curve (Maximum Value)

0.0001

0.001

0.01

0.1

0.001 0.01 0.1 1 10

Time (s)

Zth　

(K/W)

IGBT

FWD

 Negative environmental impact material

Please note that following materials are contained in the product

In order to keep characteristics and reliability level.

Material Contained part

Lead (Pb) and its compounds Solder

Arsenic and its compounds Si chip

Target

TargetTarget

Target

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IGBT MODULE

Spec.No.IGBT-SP-09017 R5

P

6

MBN1200H45E2-H

Preliminary

Specification

Module Outline Drawing

CIRCUIT DIAGRAM

EE

E

G

CC C

E

C

TERMINALS

Unit: mm

Weight: 1550(g)

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IGBT MODULE

Spec.No.IGBT-SP-09017 R5

P

7

MBN1200H45E2-H

Preliminary

Specification

QG-VGE Curve

Conditions: Ls=150nH,VCC=2600V,VGE=+/-15V,

RG(on/off)=27Ω

ΩΩ

Ω/27Ω

ΩΩ

Ω,Tj=25

o

C,

TYPICAL

QG-VGE curve

-15

-10

-5

0

5

10

15

-10 -8 -6 -4 -2 0 2 4 6 8 10

QG (uC)

VGE (V)

Cies, Coes, Cres Curve

1

10

100

1000

0.1 1 10 100

Collector to Emitter Voltage, VCE (V)

Cies, Coes, Cres (nF)

【

【【

【

Conditions

】

】】

】

Tj=25

℃

℃℃

℃

f=100kHz

Capacitance vs. Collector to Emitter Voltage

TYPICAL

Cies

Coes

Cres

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IGBT MODULE

Spec.No.IGBT-SP-09017 R5

P

8

MBN1200H45E2-H

Preliminary

Specification

HITACHI POWER SEMICONDUCTORS



For inquiries relating to the products, please contact nearest overseas representatives which is located

“Inquiry” portion on the top page of a home page.

Hitachi power semiconductor home page address http://www.hitachi.co.jp/products/power/pse/

Notices

NoticesNotices

Notices

1. The information given herein, including the specifications and dimensions, is subject to

change without prior notice to improve product characteristics. Before ordering,

purchasers are advised to contact Hitachi sale

s department for the latest version of this

data sheets.

2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure

before use.

3. In cases where extremely high reliability is required(such as use in nuclear power control,

aerospace and aviation, traffic equipment, life-support-

related medical equipment, fuel

control equipment and various kinds of safety equipment), safety should be ensured by

using semiconductor devices that feature assured safety or by means of users’ fail-

safe

precautions or other arrangement. Or consult Hitachi’s sales department staff.

4. In no event shall Hitachi be liable for any damages that may result from an accident or

any other cause during operation of the user’s units according to this data shee

ts. Hitachi

assumes no responsibility for any intellectual property claims or any other problems that

may result from applications of information, products or circuits described in this data

sheets.

5. In no event shall Hitachi be liable for any failure in

a semiconductor device or any

secondary damage resulting from use at a value exceeding the absolute maximum rating.

6. No license is granted by this data sheets under any patents or other rights of any third

party or Hitachi, Ltd.

7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,

without the expressed written permission of Hitachi, Ltd.

8. The products (technologies) described in this data sheets are not to be provided to any

party whose purpose in their application will hinder maintenance of international peace

and safety not are they to be applied to that purpose by their direct purchasers or any

third party. When exporting these products (technologies), the necessary procedures are

to be taken in accordance with related laws and regulations.

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