©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC211M, MOC212M, MOC213M Rev. 1.0.2 2
MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
T
A
= 25°C unless otherwise specified.
Notes:
1. Isolation Surge Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. V
ISO
rating of 2500 V
AC(rms)
for t = 1 minute is equivalent to a rating of 3,000 V
AC(rms)
for t = 1 second.
Symbol Rating Value Unit
Emitter
I
F
Forward Current – Continuous 60 mA
I
F
(pk) Forward Current – Peak (PW = 100 µs, 120 pps) 1.0 A
V
R
Reverse Voltage 6.0 V
P
D
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
90
0.8
mW
mW/°C
Detector
V
CEO
Collector-Emitter Voltage 30 V
V
ECO
Emitter-Collector Voltage 7.0 V
V
CBO
Collector-Base Voltage 70 V
I
C
Collector Current-Continuous 150 mA
P
D
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
150
1.76
mW
mW/°C
Total Device
V
ISO
Input-Output Isolation Voltage
(f = 60 Hz, t = 1 minute)
(1)(2)(3)
2500 Vac(rms)
P
D
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
250
2.94
mW
mW/°C
T
A
Ambient Operating Temperature Range -40 to +100 °C
T
stg
Storage Temperature Range -40 to +150 °C
T
L
Lead Soldering Temperature
(1/16
"
from case, 10 second duration)
260 °C