©2005 Fairchild Semiconductor Corporation
1
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BDW94/C Rev. B
BDW94/C PNP Epit axial Silicon Transistor
January 200 5
BDW94/C
PNP Epitaxial Silicon Transistor
Power Linear and Switchin g Application
• Power Darlington TR
• Complement to BDW93 and BDW93C Respectively
Absolute Maximum Ratings
T
a
= 25°C unless other wi se noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : BDW94
: BDW94C -45
-100 V
V
V
CEO
Collector-Emitter Voltage : BDW94
: BDW94C -45
-100 V
V
I
C
Collector Current (DC) -12 A
I
CP
Collector Current (Pulse) * -15 A
I
B
Base Current -0.2 A
P
C
Collector Dissipation (T
C
= 25°C) 80 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -65 ~ 150 °C
1.Base 2.Collector 3.Emitter
1
TO-220
2
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BDW94/C Rev. B
BDW94/C PNP Epit axial Silicon Transistor
Electrical Characteristics
T
C
= 25°C unless otherwise noted
* Pulse Test: PW = 300µs, Duty Cyc l e = 1.5 % P ul sed
Symbol Parameter Conditions Min. Typ. Max Units
V
CEO(sus)
Collector-Emitter Sustaining Voltage
: BDW94
: BDW94C I
C
= -100mA, I
B
= 0 -45
-100 V
V
I
CBO
Collector Cut-off Current : BDW94
: BDW94C V
CB
= -45V, I
E
= 0
V
CB
= -100V, I
E
= 0 -100
-100 µA
µA
I
CEO
Collector Cut-off Current : BDW94
: BDW94C V
EB
= -45V, I
B
= 0
V
CE
= -100V, I
B
= 0 -1
-1 mA
mA
I
EBO
Emitter Cut-off Current V
EB
= -5V, I
C
= 0 -2 mA
h
FE
DC Current Gain * V
CE
= -3V, I
C
= -3A
V
CE
= -3V, I
C
= -5A
V
CE
= -3V, I
C
= -10A
1000
750
100 20000
V
CE(sat)
Collector-Emitter Saturation Voltage * I
C
= -5A, I
B
= -20mA
I
C
= -10A, I
B
= -100mA -2
-3 V
V
V
BE(sat)
Base-Emitter Saturation Voltage * I
C
= -5A, I
B
= -20mA
I
C
= -10A, I
B
= -100mA -2.5
-4 V
V
V
F
Parallel Diode Forward Voltage * I
F
= -5A
I
F
= -10A -1.3
-1.8 -2
-4 V
V
3
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BDW94/C Rev. B
BDW94/C PNP Epit axial Silicon Transistor
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter On Voltage Figure 4. Output Capacitance
Figure 5. Safe Operating Area Figure 6. Pow er Derating
-0.1 -1 -10 -100
100
1k
10k
100k
V
CE
= -3V
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
-0.1 -1 -10 -100
-0.1
-1
-10
I
C
= 250 I
B
V
CE
(sat) [V], SATURATION VOLTAGE
I
C
[A], COLLECTOR CURRENT
-0.0 -0.8 -1.6 -2.4 -3.2 -4.0
-0
-4
-8
-12
-16
-20
V
CE
= -3V
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOL TAG E
-1 -10 -100
10
100
1000
f=1MHz
I
E
=0
C
ob
[pF], CAPACTIANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
-1 -10 -100 -1000
-0.1
-1
-10
-100
BDW94C
BDW94B
BDW94A
BDW94
DC
I
C
MAX. 5 ms 1 ms 100uS
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR EMITTER VOLTAGE
0 50 100 150 200 250
0
20
40
60
80
100
120
P
C
[W ], POWER D ISSIP A T I O N
Tc [
o
C], CASE TEMPERATURE
4
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BDW94/C Rev. B
BDW94/C PNP Epit axial Silicon Transistor
Mechani cal Dimensions
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Dimensions in Millimeters
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
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BDW94/C Rev. B
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accord ance with ins tructions for use provided in the labeli ng,
can be rea sonably expec ted to result in s ignificant inju ry to the
user.
2. A critical component is any component of a life support device
or system whose fai lu re to per form c an be reaso nably expe cted
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Defi nitio n o f Te rms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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Rev. I15
BDW94/C PNP Epit axial Silicon Transistor
