March 2005
©2005 Fairchild Semiconductor Corporation FDS6670AS Rev A (X)
FDS6670AS
30V N-Channel PowerTrench® SyncFET™
General Description
The FDS6670AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6670AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
• DC/DC converter
• Low side notebook
Features
• 13.5 A, 30 V. RDS(ON) max= 9.0 mΩ @ VGS = 10 V
RDS(ON) max= 11.5 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (27nC typical)
• High performance trench technology for extremely low
RDS(ON) and fast switching
• High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current – Continuous (Note 1a) 13.5 A
– Pulsed 50
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b) 1.2
PD
(Note 1c) 1
W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6670AS FDS6670AS 13’’ 12mm 2500 units
FDS6670AS FDS6670AS_NL (Note 4) 13’’ 12mm 2500 units
FDS6670AS
FDS6670AS Rev A (X)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V
∆BVDSS
∆TJ Breakdown Voltage Temperature
Coefficient ID = 1 mA, Referenced to 25°C 31
mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA
IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V
±100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.7 3 V
∆VGS(th)
∆TJ Gate Threshold Voltage
Temperature Coefficient ID = 1 mA, Referenced to 25°C
–3.3
mV/°C
RDS(on) Static Drain–Source
On–Resistance VGS = 10 V, ID = 13.5 A
VGS = 4.5 V, ID = 11.2 A
VGS=10 V, ID =13.5A, TJ=125°C
7.5
9
10
9
11.5
12.5
mΩ
ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
gFS Forward Transconductance VDS = 10 V, ID = 13.5 A 66 S
Dynamic Characteristics
Ciss Input Capacitance 1540 pF
Coss Output Capacitance 440 pF
Crss Reverse Transfer Capacitance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz 160 pF
Gate Resistance VGS = 15 mV, f = 1.0 MHz 2.1
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 10 20 ns
tr Turn–On Rise Time 5 10 ns
td(off) Turn–Off Delay Time 27 44 ns
tf Turn–Off Fall Time
VDS = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
18 32 ns
td(on) Turn–On Delay Time 13 23 ns
tr Turn–On Rise Time 15 27 ns
td(off) Turn–Off Delay Time 24 38 ns
tf Turn–Off Fall Time
VDS = 15 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 Ω
13 23 ns
Qg(TOT) Total Gate Charge at Vgs=10V 27 38 nC
Qg Total Gate Charge at Vgs=5V 16 22 nC
Qgs Gate–Source Charge 4.2 nC
Qgd Gate–Drain Charge
VDD = 15 V, ID = 13.5 A,
5.1 nC
FDS6670
A
S
FDS6670AS Rev A (X)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
VSD Drain–Source Diode Forward
Voltage VGS = 0 V, IS = 3.5 A (Note 2)
VGS = 0 V, IS = 7 A (Note 2) 0.5
0.6 0.7 V
trr Diode Reverse Recovery Time 20 nS
Qrr Diode Reverse Recovery Charge IF = 13.5A,
diF/dt = 300 A/µs (Note 3) 15 nC
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1 in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
4. FDS6670AS_NL is a lead free product. The FDS6670AS_NL marking will appear on the reel label.
FDS6670AS
FDS6670AS Rev A (X)
Typical Characteristics
0
10
20
30
40
50
00.511.52
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
4.5V
4.0V
3.5V
V
GS
= 10V
6.0V
3.0V
2.5V
0.6
1
1.4
1.8
2.2
2.6
0 1020304050
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 3.0V
6.0V 10V
4.0V 4.5V
3.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Va riatio n with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
-50 -25 0 25 50 75 100 125
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 13.5A
V
GS
= 10V
0.005
0.01
0.015
0.02
0.025
246810
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 6.75A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Va riation with
Temperature. Figure 4. On-Resistance Va riation with
Gate-to-Source Voltage.
0
10
20
30
40
50
11.522.533.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.001
0.01
0.1
1
10
0 0.1 0.2 0.3 0.4 0.5 0.6
V
SD
, BODY DIODE FO RWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6670
A
S
FDS6670AS Rev A (X)
Typical Characteristics (continued)
0
2
4
6
8
10
0 5 10 15 20 25 30
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
=13.5A V
DS
= 10V
15V
20V
0
600
1200
1800
2400
0 5 10 15 20 25 30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01 0.1 1 10 100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC10s
1s
100ms
100
µ
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
10ms1ms
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
θ
JA
= 125°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANC
E
R
θJA
(t) = r( t) * R
θJA
R
θJA
= 125 °C/W
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
P
(p
k
)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient T hermal Response Cur ve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6670
A
S
FDS6670AS Rev A (X)
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6670AS.
Figure 12. FDS6670AS SyncFET body diode
reverse reco very characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6670A).
Figure 13. Non-SyncFET (FDS6670A) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.00001
0.0001
0.001
0.01
0.1
010 20 30
V
DS
, REVERSE VOLTAGE (V)
I
DSS
, REVERSE LEAKAG E CURRENT (A)
100
o
C
25
o
C
125
o
C
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
FDS6670
A
S
TIME : 12.5ns/div
CURRENT : 0.4A/div
TIME : 12.5ns/div
CURRENT : 0.4A/div
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF F AIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
FAST
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
Rev. I15
ACEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
F ACT Quiet Series™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
QFET
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
SILENT SWITCHER
SMART ST ART™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
UltraFET
UniFET™
VCX™
Across the board. Around the world.™
The Power Franchise
Programmable Active Droop™
