PMEG2010EA,135 - NEXPERIA

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DATA SH EET

Product data sheet

Supersedes data of 2002 Dec 10 2004 Feb 06

DISCRETE SEMICONDUCTORS

PMEG2010EA

Low VF (MEGA) Schottky barrier

diode

2004 Feb 06 2

NXP Semiconductors Product data sheet

Low VF (MEGA) Schottky barrier diode PMEG2010EA

FEATURES

•Forward current: 1 A

•Reverse voltage: 20 V

•Ultra high-speed switching

•Very low forward voltage

•Very small plastic SMD package.

APPLICATIONS

•Ultra high-speed switching

•Voltage clamping

•Protection circuits.

DESCRIPTION

Planar Maximum Efficiency Ge neral Application (MEGA)

Schottky barrier diode w ith an integrated guard ring for

stress protection, encapsulated in a SOD323 (SC-76) very

small SMD plastic package.

PINNING

PIN DESCRIPTION

1cathode

2anode

col

umns 12

MGU328

Fig.1 Simplified outline (SOD323; SC-76) and

symbol.

Marking code: E1.

The marking bar indicates the cathode.

ORDERING INFORMATION

LIMITING VALUES

In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

PMEG2010EA −plastic surface mounted package; 2 leads SOD323

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VRcontinuous revers e voltage −20 V

IFcontinuous forward current −1 A

IFSM non-repetitive peak forward current tp = 8.3 ms half sinewave;

JEDEC method −5 A

Tstg storage temperature −65 +150 °C

Tjjunction temperature −125 °C

Tamb operating ambient temperature −65 +125 °C

2004 Feb 06 3

NXP Semiconductors Pr oduct data shee t

Low VF (MEGA) Schottky barrier diode PMEG2010EA

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1. Pulsed test: tp = 300 μs; δ = 0.02.

THERMAL CHARACTE RISTICS

Notes

1. Device mounted o n an FR4 printed-circuit board with Cu clad 10 x 10 mm.

2. Device mounted o n an FR4 printed-circuit board with Cu clad 40 x 40 mm.

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VFcontinuous forward voltage see Fig.2; note 1

IF = 10 mA 240 270 mV

IF = 100 mA 300 350 mV

IF = 1 000 mA 480 550 mV

IRcontinuous reverse current see Fig.3; note 1

VR = 5 V 5 10 μA

VR = 8 V 7 20 μA

VR = 15 V 10 50 μA

Cddiode capacitan ce VR = 5 V; f = 1 MHz; see Fig.4 19 25 pF

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 220 K/W

note 2 180 K/W

2004 Feb 06 4

NXP Semiconductors Pr oduct data shee t

Low VF (MEGA) Schottky barrier diode PMEG2010EA

GRAPHICAL DATA

handbook, halfpage

0.60.20 0.4 VF (V)

(mA)

103

102

10−1

MHC311

(1) (2) (3)

Fig.2 Forward current as a function of forward

voltage; typical values.

(1) Tamb = 125 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

handbook, halfpage

250 51015

(μA)

20 VR (V)

105

104

103

102

MHC312

(1)

(2)

(3)

Fig.3 Reverse current as a fun ction of reverse

voltage; typical values.

(1) Tamb = 125 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

handbook, halfpage

(pF)

10 20

15 VR (V)

MHC313

Fig.4 Diode capacitance as a function of reverse

voltage; typical values.

Tamb = 25 °C; f = 1 MHz.

2004 Feb 06 5

NXP Semiconductors Pr oduct data shee t

Low VF (MEGA) Schottky barrier diode PMEG2010EA

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOD323 SC-76

SOD32

03-12-17

06-03-16

Note

1. The marking bar indicates the cathode

UNIT A

mm 0.05

1.1

0.8 0.40

0.25 0.25

0.10 1.8

1.6 1.35

1.15 2.7

2.3 0.45

0.15

max

DIMENSIONS (mm are the original dimensions)

lastic surface-mounted package; 2 leads

(1)

2 mm

scale

bpc D E HDQ

0.25

0.15

Lpv

0.2

detail X

A1c

HDvA

2004 Feb 06 6

NXP Semiconductors Pr oduct data shee t

Low VF (MEGA) Schottky barrier diode PMEG2010EA

DATA SHEET STATUS

Notes

1. Please consult the mos t recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed si nce this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

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consequenc es of use of such information.

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reserves the right to make changes to information

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specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

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use in medical, military, aircraft, space or life support

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of an NXP Semiconductors product can reasonably be

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accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification .

Limiting values ⎯ Stress abov e on e or more limit ing

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values a re s t ress ratings only and

operation of the device at these or an y other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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products are sold subject to the general terms and

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http://www.nxp.com/profile/terms, including those

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R76/02/pp7 Date of release: 2004 Feb 06 Document orde r number: 9397 750 12626