MOC213M - APTINA IMAGING

January, 2021 − Rev. 2

1Publication Order Number:

MOC217M/D

8-pin SOIC Single-Channel

Phototransistor Output

Optocoupler

MOC205M, MOC206M,

MOC207M, MOC211M,

MOC212M, MOC213M,

MOC216M, MOC217M

Description

These devices consist of a gallium arsenide infrared emitting diode

optically coupled to a monolithic silicon phototransistor detector, in a

surface mountable, small outline, plastic package. They are ideally

suited for high−density applications, and eliminate the need for

through−the−board mounting.

Features

•Closely Matched Current Transfer Ratios Minimum BVCEO of 70 V

Guaranteed

♦MOC205M, MOC206M, MOC207M

•Minimum BVCEO of 30 V Guaranteed

♦MOC211M, MOC212M, MOC213M, MOC216M, MOC217M

•Low LED Input Current Required for Easier Logic Interfacing

♦MOC216M, MOC217M

•Convenient Plastic SOIC−8 Surface Mountable Package Style, with

0.050” Lead Spacing

•Safety and Regulatory Approvals:

♦UL1577, 2,500 VACRMS for 1 Minute

♦DIN−EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage

•These are Pb−Free Devices

Applications

•Feedback Control Circuits

•Interfacing and Coupling Systems of Different Potentials and

Impedances

•General Purpose Switching Circuits

•Monitor and Detection Circuits

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SOIC8

CASE 751DZ

MARKING DIAGRAM

XXX

VXYYS

XXX = Specific Device Code

V = DIN EN/IEC60747−5−5 Option (only

appears on component ordered with this

option)

X = Year Code

YY = Work Week

S = Assembly Package Code

See detailed ordering and shipping information on page 6 of

this data sheet.

ORDERING INFORMATION

SCHEMATIC

BASE

N/CANODE

CATHODE

4 5

EMITTER

COLLECTORN/C

N/C

MOC205M, MOC206M, MOC207M, MOC211M, MOC212M, MOC213M, MOC216M,

MOC217M

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SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation”

only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.)

Parameter Characteristics

Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains

Voltage

<150 VRMS I–IV

<300 VRMS I–III

Climatic Classification 55/100/21

Pollution Degree (DIN VDE 0110/1.89) 2

Comparative Tracking Index 175

Symbol Parameter Value Unit

VPR Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test

with tm = 10 s, Partial Discharge < 5 pC

904 Vpeak

Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test

with tm = 1 s, Partial Discharge < 5 pC

1060 Vpeak

VIORM Maximum Working Insulation Voltage 565 Vpeak

VIOTM Highest Allowable Over−Voltage 4000 Vpeak

External Creepage ≥4 mm

External Clearance ≥4 mm

DTI Distance Through Insulation (Insulation Thickness) ≥0.4 mm

TSCase Temperature (Note 1) 150 °C

IS,INPUT Input Current (Note 1) 200 mA

PS,OUTPUT Output Power (Note 1) 300 mW

RIO Insulation Resistance at TS, VIO = 500 V (Note 1) >109W

1. Safety limit values – maximum values allowed in the event of a failure.

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Symbol Rating Value Unit

TOTAL DEVICE

TSTG Storage Temperature −40 to +125 °C

TAAmbient Operating Temperature −40 to +100 °C

TJJunction Temperature −40 to +125 °C

TSOL Lead Solder Temperature 260 for 10 seconds °C

PDTotal Device Power Dissipation @ TA = 25°C 240 mW

Derate above 25°C 2.94 mW/°C

EMITTER

IFContinuous Forward Current 60 mA

IF (pk) Forward Current – Peak (PW = 100 ms, 120 pps) 1.0 A

VRReverse Voltage 6.0 V

PDLED Power Dissipation @ TA = 25°C 90 mW

Derate above 25°C 0.8 mW/°C

DETECTOR

ICContinuous Collector Current 150 mA

VCEO Collector−Emitter Voltage 30 V

VECO Emitter−Collector Voltage 7 V

PDDetector Power Dissipation @ TA = 25°C 150 mW

Derate above 25°C 1.76 mW/°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

MOC205M, MOC206M, MOC207M, MOC211M, MOC212M, MOC213M, MOC216M,

MOC217M

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Symbol Parameter Test Condition Min Typ Max Unit

EMITTER

Input Forward Voltage MOC216M, MOC217M IF = 1 mA −1.07 1.3 V

MOC205M, MOC206M,

MOC207M MOC211M,

MOC212M, MOC213M

IF = 10 mA −1.15 1.5 V

IRReverse Leakage Current VR = 6 V −0.001 100 mA

CIN Input Capacitance −18 −pF

DETECTOR

ICEO1 Collector−Emitter Dark Current VCE = 10 V, TA = 25°C−1.0 50 nA

ICEO2 VCE = 10 V, TA = 100°C−1.0 −mA

BVCEO Collector−Emitter

Breakdown Voltage

MOC205M, MOC206M,

MOC207M

IC = 100 mA70 100 −V

MOC211M, MOC212M,

MOC213M, MOC216M,

MOC217M

IC = 100 mA30 100 −V

BVCBO Collector−Base Breakdown Voltage IC = 10 mA70 120 −V

BVECO Emitter−Collector Breakdown Voltage IE = 100 mA7 10 −V

CCE Collector−Emitter Capacitance f = 1.0 MHz, VCE = 0 V −7−pF

COUPLED

CTR Collector−Output Current MOC205M IF = 10 mA, VCE = 10 V 40 −80 %

MOC206M IF = 10 mA, VCE = 10 V 63 −125 %

MOC207M IF = 10 mA, VCE = 10 V 100 −200 %

MOC211M IF = 10 mA, VCE = 10 V 20 − − %

MOC212M IF = 10 mA, VCE = 10 V 50 − − %

MOC213M IF = 10 mA, VCE = 10 V 100 − − %

MOC216M IF = 1 mA, VCE = 5 V 50 − − %

MOC217M IF = 1 mA, VCE = 5 V 100 − − %

VCE(SAT) Collector−Emitter

Saturation Voltage

MOC205M, MOC206M,

MOC207M MOC211M,

MOC212M, MOC213M

IC = 2 mA, IF = 10 mA − − 0.4 V

MOC216M, MOC217M IC = 100 mA, IF = 1 mA − − 0.4 V

ton Turn−On Time IC = 2 mA, VCC = 10 V,

RL = 100 W (Figure 12)

−7.5 −ms

toff Turn−Off Time IC = 2 mA, VCC = 10 V,

RL = 100 W (Figure 12)

−5.7 −ms

trRise Time IC = 2 mA, VCC = 10 V,

RL = 100 W (Figure 12)

−3.2 −ms

tfFall Time IC = 2 mA, VCC = 10 V,

RL = 100 W (Figure 12)

−4.7 −ms

ISOLATION CHARACTERISTICS

VISO Input−Output Isolation Voltage t = 1 Minute 2500 − − VACRMS

CISO Isolation Capacitance VI−O = 0 V, f = 1 MHz −0.2 −pF

RISO Isolation Resistance VI−O = ±500 VDC,

TA = 25°C

1011 − − W

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

MOC205M, MOC206M, MOC207M, MOC211M, MOC212M, MOC213M, MOC216M,

MOC217M

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TYPICAL PERFORMANCE CURVES

100010010

NORMALIZED CTR

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

RBE, BASE RESISTANCE (kW)

100101

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

TA = 100°C

TA = 25°C

TA = −55°C

, LED FORWARD CURRENT (mA)

, FORWARD VOLTAGE (V)

, LED INPUT CURRENT (mA)

1001010

0.01

0.1

IC, OUTPUT COLLECTOR CURRENT

(NORMALIZED)

VCE = 5 V

NORMALIZED TO IF = 10 mA

TA, AMBIENT TEMPERATURE (°C)

−80 −60 −40 −20 0 20406080100120

0.1

NORMALIZED TO TA = 25 °C

IC, OUTPUT COLLECTOR CURRENT

(NORMALIZED)

IC, OUTPUT COLLECTOR CURRENT

(NORMALIZED)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1234 5 789108

VCE, COLLECTOR−EMITTER VOLTAGE (V)

IF = 10 mA

NORMALIZED TO VCE = 5 V

TA, AMBIENT TEMPERATURE (°C)

020406080100

0.1

100

1000

10000

ICEO, COLLECTOR−EMITER

DARK CURRENT (nA)

VCE = 10 V

VCE = 5 V, TA = 25°C

NORMALIZED TO:

CTR AT RBE = OPEN

IF = 20 mA

IF = 10 mA

IF = 5 mA

Figure 1. LED Forward Voltage vs. Forward Current Figure 2. Output Current vs. Input Current

Figure 3. Output Current vs. Ambient Temperature Figure 4. Output Current vs. Collector−Emitter Voltage

Figure 5. Dark Current vs. Ambient Temperature Figure 6. CTR vs. RBE (Unsaturated)

MOC205M, MOC206M, MOC207M, MOC211M, MOC212M, MOC213M, MOC216M,

MOC217M

www.onsemi.com

TYPICAL PERFORMANCE CURVES (continued)

100010010

NORMALIZED CTR

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

RBE, BASE RESISTANCE (kW)

IF = 20 mA

IF = 10 mA

IF = 5 mA

VCE = 0.3 V, TA = 25°C

NORMALIZED TO:

CTR AT RBE = OPEN

0.01 0.1 1 10 100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

RBE, BASE RESISTANCE (MW)

NORMALIZED ton

Figure 7. CTR vs. RBE (Saturated) Figure 8. Normalized ton vs. RBE

0.01 0.1 1 10 100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VCC = 10 V

IC = 2 mA

RL = 100 W

NORMALIZED TO:

toff AT RBE = OPEN

RBE, BASE RESISTANCE (MW)

NORMALIZED toff

Figure 9. Normalized toff vs. RBE

Figure 10. Switching Time Test Circuit and Waveforms

VCC = 10 V

IC = 2 mA

RL = 100 W

NORMALIZED TO:

ton AT RBE = OPEN

OUTPUT PULSE

INPUT PULSE

TEST CIRCUIT

trtf

INPUT

IFRL

RBE

VCC = 10 V

OUTPUT

ton

10%

90%

toff

Adjust IF to produce IC = 2 mA

WAVEFORMS

MOC205M, MOC206M, MOC207M, MOC211M, MOC212M, MOC213M, MOC216M,

MOC217M

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REFLOW PROFILE

Time (seconds)

Temperature (°C)

Time 25°C to Peak

260

240

220

200

180

160

140

120

100

Tsmax

Tsmin

120

Preheat Area

Max. Ramp−up Rate = 3°C/S

Max. Ramp−down Rate = 6°C/S

240 360

Figure 11. Reflow Profile

Table 1.

Profile Freature Pb−Free Assembly Profile

Temperature Minimum (Tsmin) 150°C

Temperature Maximum (Tsmax) 200°C

Time (tS) from (Tsmin to Tsmax) 60 – 120 seconds

Ramp−up Rate (tL to tP) 3°C/second maximum

Liquidous Temperature (TL) 217°C

Time (tL) Maintained Above (TL)60 – 150 seconds

Peak Body Package Temperature 260°C +0°C / –5°C

Time (tP) within 5°C of 260°C30 seconds

Ramp−down Rate (TP to TL) 6°C/second maximum

Time 25°C to Peak Temperature 8 minutes maximum

ORDERING INFORMATION (Note 2)

Part Number Package Shipping†

MOC205M Small Outline 8−Pin 100 Units / Tube

MOC205R2M Small Outline 8−Pin 2500 / Tape & Reel

MOC205VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 100 Units / Tube

MOC205R2VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 2500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

2. The product orderable part number system listed in this table also applies to the MOC20XM and MOC21XM products.

SOIC8

CASE 751DZ

ISSUE O

DATE 30 SEP 2016

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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