DS30134 Rev. 2 - 2 1 of 2 SB370-SB3100
www.diodes.com ã Diodes Incorporated
SB370 - SB3100
3.0A SCHOTTKY BARRIER RECTIFIER
Features
DO-201AD
Dim Min Max
A25.40 ¾
B7.20 9.50
C1.20 1.30
D4.80 5.30
All Dimensions in mm
AA
B
C
D
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
·Schottky Barrier Chip
·Guard Ring Die Construction for
Transient Protection
·Low Power Loss, High Efficiency
·High Surge Capability
·High Current Capability and Low Forward
Voltage Drop
·Surge Overload Rating to 80A Peak
·For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
·Plastic Material - UL Flammability
Classification 94V-0
Mechanical Data
·Case: Molded Plastic
·Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
·Polarity: Cathode Band
·Weight: 1.1 grams (approx.)
·Mounting Position: Any
·Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol SB370 SB380 SB390 SB3100 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
70 80 90 100 V
RMS Reverse Voltage VR(RMS) 49 56 63 70 V
Average Rectified Output Current
(Note 1) @ TL = 80°CIO3.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM 80 A
Forward Voltage @ IF = 3.0A VFM 0.79 V
Peak Reverse Current @ TA = 25°C
at Rated DC Blocking Voltage @ TA = 100°CIRM 0.5
20 mA
Typical Junction Capacitance (Note 2) Cj250 pF
Typical Thermal Resistance Junction to Ambient RqJA 20 K/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Notes: 1. Measured at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
DS30134 Rev. 2 - 2 2 of 2 SB370-SB3100
www.diodes.com
0
16
32
48
64
80
110100
I , PEAK FORWARD SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fi
g
. 3 Max Non-Repetitive Peak Fwd Sur
g
e Current
Single Half-Sine-Wave
(JEDEC Method)
T = 100°C
j
10
100
1000
0.1 110
100
C , CAPACITANCE (pF)
j
V , REVERSE VOLTAGE (V)
R
Fi
g
. 4 T
y
pical Junction Capacitance
T = 25°C
j
f=1.0MHz
020 40 60 80 100 120 140
I , INSTANTANEOUS REVERSE CURRENT (mA)
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fi
g
. 5 T
y
pical Reverse Characteristics
T = 100°C
j
T = 75°C
j
T = 25°C
j
100
10
1.0
0.1
0.01
1
k
0.01
0.1
1.0
10
0 0.2 0.4 0.6 0.8 1.0
I , INSTANTANEOUS FORWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fi
g
. 2 T
y
pical Forward Characteristics
100
0
0.5
1.0
25 50 75 100 125 150
I AVERAGE FORWARD CURRENT (A)
O,
T , LEAD TEMPERATURE (°C)
L
Fi
g
. 1 Forward Current Deratin
g
Curve
1.5
2.0
2.5
3
.
0
