Copyright 2002 Semicoa Semiconductors, Inc.
Rev. G 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 1
www.SEMICOA.com
2N2060
Silicon NPN Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N2060J)
• JANTX level (2N2060JX)
• JANTXV level (2N2060JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• Matched, Dual Transistors
• Low power
• NPN silicon transistor
Features
• Hermetically sealed TO-77 metal can
• Also available in chip configuration
• Chip geometry 0410
• Reference document:
MIL-PRF-19500/270
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 60 Volts
Collector-Base Voltage VCBO 100 Volts
Emitter-Base Voltage VEBO 7 Volts
Collector Current, Continuous IC 500 mA
Power Dissipation, TA = 25°C
Derate linearly above 25°C
PT
540 one section
600 both sections
3.08 one section
3.48 both sections
mW
mW
mW/°C
mW/°C
Power Dissipation, TC = 25°C
Derate linearly above 25°C
PT
1.5 one section
2.12 both sections
8.6 one section
12.1 both sections
W
W
mW/°C
mW/°C
Operating Junction Temperature
Storage Temperature
TJ
TSTG -65 to +200 °C
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. G 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N2060
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO I
C = 30 mA 60 Volts
Collector-Emitter Breakdown Voltage V(BR)CER IC = 10 mA, RBE = 10 Ω 80
Volts
Collector-Base Cutoff Current
ICBO1
ICBO2
ICBO3
VCB = 100 Volts
VCB = 80 Volts
VCB = 80 Volts, TA = 150°C
10
2
10
µA
nA
µA
Collector-Emitter Cutoff Current ICEO V
CE = xx Volts µA
Collector-Emitter Cutoff Current ICEX V
CE = xx Volts, VEB = x Volts µA
Collector-Emitter Cutoff Current ICES V
CE = xx Volts nA
Emitter-Base Cutoff Current IEBO1
IEBO2
VEB = 7 Volts
VEB = 5 Volts
10
2
µA
nA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
IC = 10 µA, VCE = 5 Volts
IC = 100 µA, VCE = 5 Volts
IC = 1 mA, VCE = 5 Volts
IC = 10 mA, VCE = 5 Volts
IC = 100 µA, VCE = 5 Volts
TA = -55°C
25
30
40
50
10
75
90
120
150
Base-Emitter Voltage Differential |VBE1 - VBE2|1
|VBE1 - VBE2|2
VCE = 5 Volts, IC = 100 µA
VCE = 5 Volts, IC = 1 mA 5 mVolts
Base-Emitter Voltage Differential
change with temperature
|VBE1 - VBE2|1
|VBE1 - VBE2|2
VCE = 5 Volts, IC = 100 µA
TA = 25°C and -55°C
VCE = 5 Volts, IC = 1 mA
TA = 25°C and +125°C
.8
1
mVolts
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. G 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 3 of 3
www.SEMICOA.com
2N2060
Silicon NPN Transisto
r
Data Sheet
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 10 Volts, IC = 50 mA,
f = 20 MHz 3 25
Small Signal Short Circuit Forward
Current Transfer Ratio hFE VCE = 5 Volts, IC = 1 mA,
f = 1 kHz 50 150
Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 15
pF
Open Circuit Input Capacitance CIBO VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz 85
pF
Noise Figure
NF1
NF2
VCE = 10 Volts, IC = 300 µA,
f = 1 kHz, Rg = 510 Ω
VCE = 10 Volts, IC = 300 µA,
f = 10 kHz, Rg = 1 kΩ
8
8
dB
Short Circuit Input Impedance hib V
CB = 5V, IC = 1mA, f = 1kHz 20 30 Ω
Short Circuit Input Impedance hie V
CB = 5V, IC = 1mA, f = 1kHz 1 4 kΩ
Open Circuit Output Admittance hoe V
CB = 5V, IC = 1mA, f = 1kHz 16 µmhos