IXTA120P065T-TRL - LITTELFUSE

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C - 65 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ- 65 V

VGSS Continuous ±15 V

VGSM Transient ±25 V

ID25 TC= 25°C - 120 A

IDM TC= 25°C, Pulse Width Limited by TJM - 360 A

IATC= 25°C - 60 A

EAS TC= 25°C1J

PDTC= 25°C 298 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6mm (0.062 in.) from Case for 10s 300 °C

TSOLD Plastic Body for 10s 260 °C

MdMounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in.

Weight TO-263 2.5 g

TO-220 3.0 g

TO-247 6.0 g

DS100026B(01/13)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = - 250μA - 65 V

VGS(th) VDS = VGS, ID = - 250μA - 2.0 - 4.0 V

IGSS VGS = ± 15V, VDS = 0V ±100 nA

IDSS VDS = VDSS, VGS = 0V - 10 μA

TJ = 125°C - 750 μA

RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 10 mΩ

TrenchPTM

Power MOSFETs

P-Channel Enhancement Mode

Avalanche Rated

IXTA120P065T

IXTP120P065T

IXTH120P065T

VDSS = - 65V

ID25 = - 120A

RDS(on) ≤≤

≤≤

≤ 10mΩΩ

ΩΩ

Ω

Features

zInternational Standard Packages

z Avalanche Rated

zExtended FBSOA

zFast Intrinsic Diode

z Low RDS(ON) and QG

Advantages

zEasy to Mount

zSpace Savings

zHigh Power Density

Applications

zHigh-Side Switching

zPush Pull Amplifiers

zDC Choppers

zAutomatic Test Equipment

zCurrent Regulators

zBattery Charger Applications

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXTH)

G

S

DD (Tab)

TO-263 AA (IXTA)

G

S

D (Tab)

GDS

TO-220AB (IXTP)

D (Tab)

IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.

IXTA120P065T IXTH120P065T

IXTP120P065T

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = -10V, ID = 0.5 • ID25, Note 1 45 75 S

Ciss 13.2 nF

Coss VGS = 0V, VDS = - 25V, f = 1MHz 1345 pF

Crss 505 pF

td(on) 31 ns

tr 28 ns

td(off) 38 ns

tf 21 ns

Qg(on) 185 nC

Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 55 nC

Qgd 58 nC

RthJC 0.42 °C/W

RthCS (TO-220) 0.50 °C/W

(TO-247) 0.21 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V - 120 A

ISM Repetitive, Pulse Width Limited by TJM - 480 A

VSD IF = - 60A, VGS = 0V, Note 1 -1.3 V

trr 53 ns

QRM 77 nC

IRM - 2.9 A

Resistive Switching Times

VGS = -10V, VDS = - 33V, ID = - 50A

RG = 1Ω (External)

IF = - 60A, -di/dt = -100A/μs

VR = - 33V, VGS = 0V

TO-247 Outline

Pins: 1 - Gate 2 - Drain

3 - Source 4 - Drain

TO-220 Outline

1 = Gate

2 = Drain

3 = Source

TO-263 Outline

1. Gate

2. Drain

3. Source

4. Drain

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.06 4.83 .160 .190

b 0.51 0.99 .020 .039

b2 1.14 1.40 .045 .055

c 0.40 0.74 .016 .029

c2 1.14 1.40 .045 .055

D 8.64 9.65 .340 .380

D1 8.00 8.89 .280 .320

E 9.65 10.41 .380 .405

E1 6.22 8.13 .270 .320

e 2.54 BSC .100 BSC

L 14.61 15.88 .575 .625

L1 2.29 2.79 .090 .110

L2 1.02 1.40 .040 .055

L3 1.27 1.78 .050 .070

L4 0 0.13 0 .005

IXTA120P065T IXTH120P065T

IXTP120P065T

Fi g . 1. Ou tp u t C h ar acter i sti cs @ T

J

= 25ºC

-120

-100

-80

-60

-40

-20

0

-1.4-1.2-1-0.8-0.6-0.4-0.20

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 9V

- 8V

- 5

V

- 6

V

- 7

V

Fi g . 2. Exten d ed Ou tp u t C h ar acter i sti cs @ T

J

= 25ºC

-350

-300

-250

-200

-150

-100

-50

0

-20-18-16-14-12-10-8-6-4-20

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 5

V

- 6

V

- 7

V

- 8

V

- 9

V

Fi g . 3. Ou tp u t C h ar acter i sti cs @ T

J

= 125ºC

-120

-100

-80

-60

-40

-20

0

-2-1.8-1.6-1.4-1.2-1-0.8-0.6-0.4-0.20

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 9V

- 8V

- 6V

- 5V

- 7V

Fig. 4. R

DS(on)

Norm alized to I

D

= - 60A Value vs.

Junction T emperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= -10V

I

D

= -120A

I

D

= - 60A

Fig. 5. R

DS(on)

Normalized to I

D

= - 60A Value vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

-360-300-240-180-120-600

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= -10V

T

J

= 25ºC

T

J

= 125ºC

Fig. 6. Maximum Drain Current vs.

Case Temper atu r e

-140

-120

-100

-80

-60

-40

-20

0

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.

IXTA120P065T IXTH120P065T

IXTP120P065T

Fig. 7. Input Admittance

-180

-160

-140

-120

-100

-80

-60

-40

-20

0

-6.5-6.0-5.5-5.0-4.5-4.0-3.5-3.0

V

GS

- Volts

I

D

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0

20

40

60

80

100

-180-160-140-120-100-80-60-40-200

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

25ºC

125ºC

Fig. 9. Forward Voltage Drop of In trinsic Diode

-300

-250

-200

-150

-100

-50

0

-1.5-1.4-1.3-1.2-1.1-1.0-0.9-0.8-0.7-0.6-0.5-0.4

V

SD

- Volts

I

S

- Amperes

T

J

= 125ºC

T

J

= 25ºC

Fig. 10. Gate Charge

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

0

0 20 40 60 80 100 120 140 160 180 200

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= - 33V

I

D

= - 60A

I

G

= -1mA

Fig. 11. Capacitance

100

1,000

10,000

100,000

-40-35-30-25-20-15-10-50

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MH

z

Ciss

Crss

Coss

Fi g . 12 . F o r war d -B ias Saf e Op er at i n g Area

1

10

100

1,000

110100

V

DS

- Volts

I

D

- Amperes

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

25µs

1ms 100µs

R

DS(on)

Limit

10ms

-

---

DC, 100ms

-

External Lead

Current Limit

IXTA120P065T IXTH120P065T

IXTP120P065T

Fi g . 14. R esi sti ve Tur n -o n R i se Time vs.

Drain Current

16

18

20

22

24

26

28

30

32

-50-46-42-38-34-30-26

I

D

- Amperes

t

r

- Nanoseconds

R

G

= 1Ω, V

GS

= -10V

V

DS

= - 33V

T

J

= 25ºC

T

J

= 125ºC

Fi g . 15. R esi sti ve Tu rn -o n Swi tch i n g Times vs .

Gate Resi stance

0

20

40

60

80

100

120

140

160

180

0 2 4 6 8 10 12 14 16 18

R

G

- Ohms

t

r

- Nanoseconds

0

10

20

30

40

50

60

70

80

90

t

d(on)

- Nanoseconds

t r

td(on)

- - - -

T

J

= 125ºC, V

GS

= -10V

V

DS

= - 33V I

D

= - 50A, - 25A

Fig . 16. Resi stive Tu rn -off Switch i ng Times vs.

Junction T emperature

18

19

20

21

22

23

24

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- Nanoseconds

35

40

45

50

55

60

65

t

d(off)

- Nanoseconds

t

f td(off)

- - - -

R

G

= 1Ω, V

GS

= -10V

V

DS

= - 33V

I

D

= - 25A

I

D

= - 50A

Fi g . 17. R esi sti ve Turn -o ff Switc h ing Times vs.

Drain Current

34

38

42

46

50

54

58

62

-50-46-42-38-34-30-26

I

D

- Amperes

t

f - Nanoseconds

18

19

20

21

22

23

24

25

t

d(off)

- Nanoseconds

t

f td(off)

- - - -

R

G

= 1Ω, V

GS

= - 10V

V

DS

= - 33V

T

J

= 25ºC

T

J

= 25ºC

T

J

= 125ºC

T

J

= 125ºC

Fi g . 13. R esi sti ve Turn -o n R i se Time vs.

Junction T emperature

12

16

20

24

28

32

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanoseconds

R

G

= 1Ω, V

GS

= -10V

V

DS

= - 33V

I

D

= - 50A

I

D

= - 25A

Fi g . 18. R esi sti ve Tur n -o f f Swit chin g Times vs.

Gate Resi sta n ce

0

20

40

60

80

100

120

140

160

180

200

0 2 4 6 8 10 12 14 16 18

R

G

- Ohms

t

f - Nanoseconds

0

30

60

90

120

150

180

210

240

270

300

t

d(off)

- Nanoseconds

t

f td(off)

- - - -

T

J

= 125ºC, V

GS

= -10V

V

DS

= - 33V

I

D

= - 50A

I

D

= - 25A

IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.

IXTA120P065T IXTH120P065T

IXTP120P065T

IXYS REF: T_120P065T(A6)11-08-10-A

Fig . 19. Ma xi mum Tr ansient Th er mal I mped ance

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.