SANKEN ELECTRIC CO.,LTD.
The information in this publication has been carefully checked and is believed to be
accurate; however, no responsibility is assumed for inaccuracies.
Sanken reserves the right to make changes without further notice to any products herein
in the interest of improvements in the performance, reliability, or manufacturability of its
products. Before placing an order, Sanken advises its customers to obtain the latest
version of the relevant information to verify that the information being relied upon is
current.
Application and operation examples described in this catalog are quoted for the sole
purpose of reference for the use of the products herein and Sanken can assume no
responsibility for any infringement of industrial property rights, intellectual property rights
or any other rights of Sanken or any third party which may result from its use.
When using the products herein, the applicability and suitability of such products for the
intended purpose or object shall be reviewed at the users responsibility.
Although Sanken undertakes to enhance the quality and reliability of its products, the
occurrence of failure and defect of semiconductor products at a certain rate is inevitable.
Users of Sanken products are requested to take, at their own risk, preventative measures
including safety design of the equipment or systems against any possible injury, death,
fires or damages to the society due to device failure or malfunction.
Sanken products listed in this catalog are designed and intended for the use as
components in general purpose electronic equipment or apparatus (home appliances,
office equipment, telecommunication equipment, measuring equipment, etc.).
Before placing an order, the user’s written consent to the specifications is requested.
The use of Sanken products without the written consent of Sanken in the applications
where extremely high reliability is required (aerospace equipment, nuclear power control
systems, life support systems, etc.) is strictly prohibited.
Anti radioactive ray design is not considered for the products listed herein.
This publication shall not be reproduced in whole or in part without prior written approval
from Sanken.
Gallium arsenide is used in some of the products listed in this publication. These
products are dangerous if they are burned or smashed in the process of disposal. It is
also dangerous to drink the liquid or inhale the gas generated by such products when
chemically disposed.
CAUTION / WARNING
•
•
•
•
•
•
•
•
•
•
Contents
1
Examples of Use of Typical Products by Application ..............
2
1 ICs
1-1. Regulator ICs
Application Note ................................................................................ 7
Dropper Type Regulator ICs ......................................................... 8
Dropper Type System Regulator ICs ...................................... 16
Switching Type Regulator ICs ................................................... 22
1-2. Power Switch ICs
High-side Power Switch ICs ...................................................... 24
Low-side Switch ICs ...................................................... 50
1-3. Motor Driver ICs
Stepper-motor Driver ICs ............................................................ 56
DC Motor Driver ICs ...................................................................... 60
1-4. HID Lamp Driver ICs ..................................................................... 64
1-5. Custom ICs ....................................................................................... 76
2 Discretes
2-1. Transistors
2-1-1. Transistors ............................................................................ 80
2-1-2. Transistor Arrays ............................................................... 96
2-2. MOS FETs
2-2-1. MOS FETs ......................................................................... 108
2-2-2. MOS FET Arrays ............................................................. 117
2-3. Thyristors
2-3-1. Reverse Conducting Thyristors .............................. 125
2-4. Diodes
2-4-1. Alternator Diodes ........................................................... 127
2-4-2. High-voltage Diodes for Igniter ................................ 128
2-4-3. Power Zener Diodes ..................................................... 129
2-4-4. General-purpose Diodes ............................................ 130
3 LEDs
3-1. Uni-Color LED Lamps ................................................................ 134
3-2. Bi-Color LED Lamps .................................................................. 137
3-3. Surface Mount LEDs .................................................................. 138
3-4. Infrared LEDs .................................................................................. 140
3-5. Ultraviolet LEDs ............................................................................ 141
3-6. Multi-chip Modules .................................................................... 142
Part Number Index in Alphanumeric Order ......................................... 147
2
Examples of Use of Typical Products by Application
Examples of Use of Typical Products by Application
Throttle System
•DC Motor Driver ICs
(p.60 and after)
Control IC and full bridge power stage in a single package.
Surface-mounting type series are also available.
SI-5300 / SPF7301
•Motor Driver Transistor Arrays
(p.99)
H-bridge of NPN x 2 and PNP x 2 in a single package.
With integrated back emf. clamp diode.
SLA8004
•Motor driver power transistors
(p.68 and after)
With integrated back emf. clamp diode.
2SA1568 / 2SC4065
•Diodes
(p.127)
Solder and press fit type as well as Zener type is available.
SG-9 / SG-10 / SG-14
•Regulator ICs
Custom-made (contact our sales reps.)
Alternators
•Injector transistors
(p.84 and after)
Transistors and MOS FETs are available in discretes and arrays in
various packages.
2SB1622 / 2SC4153 / 2SD2382 / MN611S / STA461C /
STA463C / STA508A / SDC09 / SDK09 / SPF0001 / SSD103
Fuel Injectors
•HID lamp driver ICs
(p.64 and after)
High-voltage controller IC and 4-circuit power stage in a
single package.
Direct drive from CPU.
SLA2402M / SLA2403M / SMA2409M
•Thyristors for HID lamp ignition
(p.125 and after)
Best suited to C-discharge SW element on high-voltage
primary side of an igniter.
Integrates a reverse direction diode.
High di/dt resistance
TFC561D / TFC562D
•MOS FET arrays for driving HID lamps
(p.122)
4 circuits of N-ch MOS FETs of 450V/7A in a single package.
SMA5113
•2-ph stepper-motor driver ICs for AFS
(p.58 and after)
Low output saturation voltage, integrated recovery diode,
surface-mount.
SPF7211
•High-voltage diodes for ignition
(p.128)
Withstand voltage range: 0.5 to 15kV
SHV-01JN / SHV-05J / SHV-06JN
•Ignition transistors
(p.89 and after)
2SD2141 / MN638S
•Ignition ICs
Custom-made (contact our sales reps.)
Headlamps
Ignition System
3
•AT solenoid drivers (high-side power switch ICs)
(p.26 and after)
Integral diagnostic function, surface-mount, 2- and 3-circuit types and other
diverse models.
SI-5151S / SPF5003 / SPF5004 / SPF5007 / SLA2502M
•AT linear solenoid driver (high-side power switch ICs)
(p.46 and after)
Integral current detection resistor, current monitor output, surface-mount and
2-circuit types are also available.
SPF5017 / SPF5018
•Solenoid/motor driver MOS FETs
(p.108 and after)
Various packages from discretes to arrays.
2SK3710 / FKV660S / SLA5027 / SDK08
•Solenoid/motor driver ICs
(p.54)
Surface-mount 4-circuit type with output voltage monitor.
SPF5012
•Multi-chip LED modules
(p.142)
Room Lamp
Power Steering
•Motor driver MOS FETs
(p.108 and after)
Various packages integrating low ON resistors,
bidirectional Zener diodes, etc.
2SK3710 / 2SK3711 / 2SK3724 / 2SK3800 /
2SK3801 / 2SK3803 / 2SK3851
•Power LED
Custom-made
(contact our sales reps.)
Tail Lamps
O2 sensor heater
•Heater driver MOS FETs
(p.115)
Low ON resistor and integral gate protection
diode.
FKV460S
Car Navigation and Audio
•Various LEDs
(p.133)
Transmission ABS and VDC
4
5
1
ICs
1-1. Regulator ICs
Application Note ..............................................
7
Dropper Type Regulator ICs ....................
8
SI-3001S
(5V/1A, With Output ON/OFF Control)
...
8
SI-3003S (5V/0.8A, 3-terminal) .......................
10
SI-3101S
(5V/0.4A, 5V/0.07A, 2-output, With Output ON/OFF Control)
12
SI-3102S
(5V/0.1A, 5V/0.04A, 2-output, With Output ON/OFF Control)
14
Dropper Type System Regulator ICs ..
16
SI-3322S (5V, Surface-mount) ........................
16
SPF3004
(5V/0.4A, 3.3V/0.2A, Surface-mount 2-output)
18
SPF3006
(5V/0.4A, 5V/0.2A, Surface-mount 2-output) 20
Switching Type Regulator ICs ...............
22
SI-3201S (5V/3A) ............................................
22
1-2. Power Switch ICs
High-side Power Switch ICs ...................
24
SDH04
(With Diagnostic Function, Surface-mount 2-circuits)
24
SI-5151S (With Diagnostic Function)..............
26
SI-5152S (With Diagnostic Function)..............
28
SI-5153S
(With Diagnostic Function, Built-in Zener Diode)
30
SI-5154S
(With Diagnostic Function, Built-in Zener Diode)
32
SI-5155S (With Diagnostic Function)..............
34
SLA2501M
(With Diagnostic Function, 3-circuits)
36
SLA2502M
(With Diagnostic Function, 4-circuits)
38
SPF5003
(With Diagnostic Function, Surface-mount 2-circuits)
40
SPF5004
(With Diagnostic Function, Surface-mount 2-circuits)
42
SPF5007
(With Diagnostic Function, Surface-mount 3-circuits)
44
SPF5017
(Surface-mount 2-circuit, current monitor output function)
46
SPF5018
(Surface-mount, current monitor output function)
48
Low-side Switch ICs ...................................
50
SPF5002A (Surface-mount 4-circuits) ..........
50
SPF5009
(With Diagnostic Function, Surface-mount 4-circuits)
52
SPF5012
(Surface-mount 4-circuits with Output Monitor)
54
1-3. Motor Driver ICs
Stepper-motor Driver ICs .........................
56
SLA4708M (50V, 1.5A) ...................................
56
SPF7211 (40V, 0.8A) .....................................
58
DC Motor Driver ICs ....................................
60
SI-5300 (40V, 5A) .....................................
60
SPF7301 (36V, 7A) .....................................
62
1-4. HID Lamp Driver ICs
SLA2402M (500V, 15A) ..................................
64
SLA2403M (500V, 7A) ....................................
68
SMA2409M (500V, 7A) ...................................
72
1-5. Custom ICs .....................................
76
6
Application Note for Regulator ICs
■ Temperature and Reliability
Reliability of an IC is generally heavily dependent on
operating temperature. Heat radiation must be fully
considered, and an ample margin should be given
to the radiating area in designing heatsinks. When
mounting ICs on heatsinks, always apply silicone
grease and firmly tighten. Air convection should
actively be used in actual heat dissipation. The
reliability of capacitors and coils, the peripheral
components, is also closely related to temperature.
A high operating temperature may reduce the
service life. Exceeding the allowable temperature
may cause coils to be burned or capacitors to be
damaged. Make sure that output smoothing coils
and input/output capacitors do not exceed their
allowable temperature limit in operation. We
recommend, in particular, to provide an ample
margin for the ratings of coils to minimize heat
generation.
■ Power Dissipation (PD)
1. Dropper Type
PD
=
IO • [VIN (mean) - VO]
2. Switching Type
PD
=
VO • IO ( - 1) - VF • IO
(1 - )
Efficiency depends on input/output conditions.
Refer to the efficiency characteristics.
VO : Output voltage
VIN: Input voltage
IO : Output current
: Efficiency
VF : Diode forward voltage
■ Heatsink Design
The maximum junction temperature Tj (max) and the
maximum case temperature Tc (max) given in the
absolute maximum ratings are specific to each
product type and must be strictly met. Thus,
heatsink design must be performed in consideration
of the condition of use which affects the maximum
power dissipation PD (max) and the maximum
ambient temperature Ta (max). To facilitate heatsink
design, the relationship between these two
parameters is presented in the Ta-PD characteristic
graphs. Heatsink design must be performed in the
following steps:
1. Obtain the maximum ambient temperature Ta
(max) (within the set).
2. Obtain the maximum power dissipation PD
(max).
3. Identify the intersection on the Ta-PD charac-
teristic graph and obtain the size of the
heatsink to be used.
The size of a heatsink has been obtained. In actual
applications, a 10 to 20% derating factor is
generally used. Moreover, the heat dissipation
capacity of a heatsink is heavily dependent on how
it is mounted. It is therefore important and
recommended to measure the heatsink and case
temperature in actual operating environments.
■ Setting DC Input Voltage
Observe the following precautions when setting the
DC input voltage:
• VIN (min) must be at least the set output voltage
plus dropout voltage for the dropper type. It must
be at least the recommended lowest input
voltage for the switching type.
• VIN (max) must not exceed the DC input voltage of
the electrical characteristics.
■ Screw Torque
Screw torque should be between 0.588 to 0.686
[N • m] (6.0 to 7.0 [kgf • cm]).
■ Recommended silicone grease
Volatile type silicone grease may produce cracks
after elapse of long term, resulting in reducing heat
radiation effect.
Silicone grease with low consistency (hard grease)
may cause cracks in the mold resin when screwing
the product to a heatsink.
100 VO
VIN
7
■ Others
This product may not be connected in parallel.
The switching type may not be used for current
boosting and stepping up voltage.
Type Suppliers
G746 Shin-Etsu Chemical Co., Ltd.
YG6260 GE Toshiba Silicones Co., Ltd.
SC102 Dow Corning Toray Silicone Co., Ltd.
Output ON
Output OFF
Output ON
Output OFF
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
Output Voltage
Dropout Voltage
Input Voltage
Quiescent Circuit Current
Output Voltage Temperature
Coefficient
(Tj=25ºC, VIN =14V unless otherwise specified)
VIN
VIN =12 to 16V, IO= 0.4A
IO 0.4A
IO 1.0A
IO=0.4A, VIN =6 to 16V
IO=0 to 0.4A
IO=5mA, Ta = –10 to +100ºC
IO=0A
VC= 2.7V
VC= 0.4V
f=100 to 120Hz
6 *230 *1V
4.90 5.00 5.10 V
0.5
1.0
V
V
30 mV
±0.5
100 mV
54
3
dB
10 mA
1.2 A
2.0 V
0.8 V
20
– 0.3
µA
mA
VO
VDIF
∆VO LINE
∆VO
LOAD
mV/ºC∆VO/∆T
RREJ
Iq
IS1
VC, IH
VC, IL
IC, IH
IC, IL
Ripple Rejection
Overcurrent Protection Starting
Current
Control Voltage
Control Current
Line Regulation
Load Regulation
*3
*4
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings (Ta = 25ºC)
DC Input Voltage
Output Control Terminal Voltage
Output Current
Power Dissipation
Junction Temperature
Operating Temperature
Storage Temperature
Junction to Case Thermal
Resistance
Junction to Ambient-Air Thermal
Resistance
VIN
VC
IO
PD1
PD2
Tj
TOP
Tstg
j-c
j-a
V
With infinite heatsink
Stand-alone without heatsink
Stand-alone without heatsink
V
A
W
W
ºC
ºC
ºC
ºC/W
ºC/W
35
VIN
1.0
18
1.5
– 40 to +125
– 40 to +100
– 40 to +125
5.5
66.7
*1
Vc Terminal
Equivalent Circuit Diagram
Standard Circuit Diagram
Features
● Output current of 1.0A
● 5-terminal type <output on/off control, variable output voltage (rise only)>
● Voltage accuracy of ±2%
● Low dropout voltage 1V at IO 1.0A, 0.5V at IO 0.4A
● Built-in overcurrent, overvoltage and thermal protection circuits
● Withstands external electromagnetic noises
● TO220 equivalent full-mold package
External Dimensions (unit: mm)
8
a
b
12345
10.0±0.2
3.2±0.2
0.5
4.0±0.2
7.9±0.2
16.9±0.3
0.95±0.15
0.85 –0.1
P1.7±0.7•4=6.8±0.7
4.2±0.2
2.8±0.2
2.6±0.1
3.9±0.7
8.2±0.7
0.45
–0.1
+0.2
(2.0)
5.0±0.6
(8.0)
(17.9)
(4.6)
(4.3)
+0.2
1. GND
2. VC(on/off)
3. Vo
4. Vosense
5. VIN
a: Part No.
b: Lot No.
(Forming No. 1101)
D
V
DC input DC output
V
C
1
O
O
IN
53
1
SI-3001S
24
C1C2
OPEN
GND
1
2
53
4
VO
VOsense
R3
R4
MIC
Tr1
R1
R2
VIN
Vc
(on/off)
+
+
Dropper Type Regulator ICs [With Output ON/OFF Control]
SI-3001S
Notes:
*1. Since PD(max)=(V
IN –V
O)•I
O=18(W), VIN (max)and IO(max)may be limited depending on operating conditions. Refer to the
Ta - PD curve to compute the corresponding values.
*2. Refer to the dropout voltage.
*3. IS1 rating shall be the point at which the output voltage VO (VIN = 14V, Io = 0.4A) drops to –5%.
*4. The output control terminal Vc is pulled up inside the IC. Each input level can be directly driven with LS-TTL ICs. Thus,
LS-TTL direct driving is also possible.
a : Pre-regulator
b : Output ON/OFF control
c : Thermal protection
d : Over-input and overcurrent protection
e : Drive circuit
f : Error amplifier
g : Reference voltage
a
b
c
def
g
Co : Output capacitor (47 to 100µF, 50V )
C1, C2 : Input capacitors (C1: approx. 47µF, C2: approx. 0.33µF).
These are required for inductive input lines or long wiring.
Tantalum capacitors are recommended for C1 and Co,
especially at low temperatures.
D1 :Protection diode. Required as protection against reverse
biasing between input and output.
(Recommended diode: Sanken EU2Z.)
9
0
00.5 1.0
0.5
0.4
0.3
0.2
0.1
0
051015202530
5.1
5.0
4.9
1.0 (A)
0 (A)
0.4 (A)
IO=
0
00.5
5.0
4.9
5.5 (V)
5.1
1.0
30 (V)
12 to 16 (V)
VIN =
0
0
246810
1
2
3
4
5
6
7
(Ω)
5
(Ω)
12
0
0
246810
15
10
5
I=0(A)
o
0
0
0.5 1.0 1.5 2.0
1
2
3
4
5
6
2.5 3.0
(V)
5.5
(V)
14
(V)
20
(V)
30
(V)
10
0
0
123
1
2
3
4
6
45
5
OFF
14 (V)
I=0 (A)
V=
o
IN
ON
0
0125
1
2
3
4
6
5
130 135 140 145 150 155
6
(A)
I=0
V=(V)
o
IN
0
0
5.0
4.9
5.1
100
--50 50 150
5.5(V)
14(V)
16(V) 12(V) 30 (V)
VIN =
VIN —IOUT condition
/0.412
(V) (A)
(A)
(A)
(A)
(A)
(V)
(V)
(V)
(V)
/1.05.5
/0.414
/0.416
/030
0–20--30 20 6040 80 100
0
5
10
15
20
Use G746 silicone grease
(Shin-Etsu Chemical) and
aluminum heatsink.
With infinite heatsink
200•200•2mm (2.3ºC/W)
100•100•2mm (5.2ºC/W)
75•75•2mm (7.6ºC/ W)
Without heatsink
10
0
4
3
2
1
5
6
3020 40 50
Note on Thermal Protection Characteristics:
The thermal protection circuit is intended for protection
against heat during instantaneous short-circuiting. Its
operation, including reliability, is not guaranteed for
short-circuiting over an extended period of time.
Output current IO (A)
Output current IO (A)
Dropout voltage VDIF (V)
■ Io vs VDIF Characteristicsc ■ Line Regulation
Output voltage VO (V)
Output voltage VO (V)Output voltage VO (V)Output voltage VO (V)
Output voltage VO (V)
Output voltage VO (V)
Output voltage VO (V)
Output voltage VO (V)
Input voltage VIN (V)
Input voltage VIN (V)
Input voltage VIN (V) Input voltage VIN (V)
■ Load Regulation
■ Rise Characteristics ■ Quiescent Circuit Current
Quiescent current lq (mA)
■ Overcurrent Protection Characteristics
■ ON/OFF Control Characteristics
Output ON/OFF control voltage VC (V)
■ Thermal Protection Characteristics
■ Output Voltage Temperature Characteristics
Ambient temperature Ta (ºC)
Ambient temperature Ta (ºC)
Output current IO (A)
Operating temperature Ta (ºC)
Power Dissipation PD (W)
■ Ta—PD Characteristics
■ Overvoltage Protection Characteristics
Load resistance
Electrical Characteristics
Dropper Type Regulator ICs [With Output ON/OFF Control]
SI-3001S
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
Output voltage
Dropout voltage
Input voltage
Quiescent circuit current
(Tj=25ºC, VIN=14V, IO=0.5A unless otherwise specified)
VIN
IO 0.5A
IO 0.8A
VIN =8 to 16V
IO=0 to 0.5A
IO=0A
f=100 to 120Hz
630V
4.90 5.00 5.10 V
0.5
1.0
V
V
30 mV
100 mV
54
3
dB
10 mA
0.9 A
VO
VDIF
VO LINE
VO
LOAD
RREJ
Iq
IS1
Ripple rejection
Overcurrent protection starting
current
Line regulation
Load regulation
*3
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings (Ta=25ºC)
DC input voltage
Output current
Power Dissipation
Junction temperature
Operating temperature
Storage temperature
Junction to case thermal resistance
Junction to ambient-air thermal
resistance
VIN
IO
PD1
PD2
Tj
TOP
Tstg
j-c
j-a
V
With infinite heatsink
Stand-alone without heatsink
Stand-alone without heatsink
A
W
W
ºC
ºC
ºC
ºC/W
ºC/W
35
0.8
22
1.8
–40 to +150
–40 to +100
–40 to +150
5.5
66.7
*2
Equivalent Circuit Diagram
Standard Circuit Diagram
External Dimensions (unit: mm)
10
Features
● 3-terminal IC regulator with 0.8A output current
● Voltage accuracy of ±2%
● Low Dropout voltage 0.5V at IO 0.5A, 1V at IO 0.8A
●
Built-in dropping type overcurrent, overvoltage and thermal protection circuits
● TO220 equivalent full-mold package
4•P1.7±0.15 = 6.8 ±0.15
10
±0.2
4.2
±0.2
2.8
±0.2
2.6
±0.15
3.2
±0.2
2 max
0.5
4
±0.2
7.9
±0.2
16.9
±0.3
(13.5)
0.94
±0.15
0.45
a
b
Terminal connections
1. VIN
2. (NC)
3. GND
4. (NC)
5. VO
a: Part No.
b: Lot No.
0.85
+0.2
–0.1
+0.2
–0.1
(root dimensions)
12345
(Forming No. 1115)
D
V
DC input DC output
V
C
1
O
O
IN
1
3
SI-3003S
C1C2
5
2
N.C N.C
4
++
VIN VO
1
3
5
GND
TSD
ERR
OCP
DET
REF
DRIVE
Dropper Type Regulator ICs [3-terminal] SI-3003S
Notes:
*1. Since PD(max) = (VIN –V
O) • IO=22(W), VIN(max) and IO(max) may be limited depending on operating conditions. Refer to the
Ta — PD curve to compute the corresponding values.
*2. Refer to the dropout voltage.
*3. IS1 rating shall be the point at which the output voltage VO (VIN=14V, IO=0.5A) drops to –5%.
Co : Output capacitor (47 to 100µF, 50V)
C1,C2
: Input capacitors (C1: approx. 47µF, C 2: approx. 0.33µF).
These are required for inductive input lines or long
wiring. Tantalum capacitors are recommended for C1
and Co, especially at low temperatures.
D1 : Protection diode. Required as protection against reverse
biasing between input and output.
(Recommended diode: Sanken EU2Z.)
*2*1
*
2
*
1
*
2
*
1
11
0.2
0.1
0.3
0.4
0.5
00 0.2 0.4 0.6 0.8 0
4.9
5.0
5.1
0510152025 3530
0
2
1
3
4
6
5
0246 108
0
0
4.9
5.0
5.1
0.2 0.4 0.6 0.8
IO=0A
=0.2A
=0.5A
=0.8A
IO=0A
=0.5A
=0.8A
IO
=
0.8A
=
0.5A
=
0.2A
=
0A
IO=0.5, 0.8A
=0.2A
=0A
VIN
=
35V
=
25V
=
14V
=
6V
5.0
4.9
5.1
–50 0 50 100 150
VIN / I O:
6V / 0.8A
14V / 0.5A
30V / 0A
0
100
50
150
200
250
0510152025 3530
0
0
4
3
2
1
5
6
0.5 1.0 1.5 2.0 2.5
VIN =6V
14V
35V
25V
2
1
3
4
5
6
0
120 140 160 180 200
VIN=6V
IO=5mA
10
5
15
20
25
0
–40 0 40 80 100
200 • 200 • 2mm
(2.3ºC/W)
100 • 100 • 2mm
(5.2ºC/W)
75 • 75 • 2mm
(7.6ºC/W)
Note on Thermal Protection Characteristics:
The thermal protection circuit is intended for protection
against heat during instantaneous short-circuiting. Its
operation, including reliability, is not guaranteed for
short-circuiting over an extended period of time.
Output current IO (A)
Output current IO (A)
Dropout voltage VDIF (V)
■ Io vs VDIF Characteristics ■ Line Regulation
Output voltage VO (V)
Output voltage VO (V)Output voltage VO (V)
Output voltage VO (V) Output voltage VO (V)
Output voltage VO (V)
Input voltage VIN (V)
Input voltage VIN (V) Input voltage VIN (V)
■ Load Regulation
■ Rise Characteristics ■ Circuit Current
■ Thermal Protection Characteristics
Ground current lg (mA)
■ Overcurrent Protection Characteristics
■ Output Voltage Temperature Characteristics
Ambient temperature Ta (ºC)
Ambient temperature Ta (ºC)
Output current IO (A)
Operating temperature Ta (ºC)
Power Dissipation PD (W)
■ Ta—PD Characteristics
With silicone grease
Heatsink: aluminum
With infinite heatsink
Without heatsink
Electrical Characteristics
Dropper Type Regulator ICs [3-terminal] SI-3003S
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
(Ta=25ºC)
DC input voltage
Battery reverse connection
Output control terminal voltage
Output current
Power Dissipation
Output voltage
Dropout voltage
Input voltage
Quiescent circuit current
Overvoltage protection starting
voltage
Thermal protection starting
temperature
(Tj=25ºC, VIN =14V unless otherwise specified)
Channel-channel voltage difference
Junction Temperature
Operating temperature
Storage temperature
Junction to case thermal resistance
Junction to ambient-air thermal
resistance
VIN
VINB
VC
VIN
IO=0.05A
IO=0.3A
IO1 0.05A
IO2 0.4A
VIN=6 to 18V, IO=0.05A
IO1=0 to 0.05A
VIN=6 to 18V, IO=0.3A
IO2=0 to 0.3A
IO1=0A, VC=0V
VC=4.8V
VC=3.2V
f=100 to 120Hz
f=100 to 120Hz
I
O1
=
0 to 0.05A
I
O2
=
0 to 0.3A
635V
4.80 5.00 5.20 V
4.80 5.00 5.20 V
–0.1 0.1 V
1.0 V
1.0 V
10 30 mV
10 30 mV
30 70 mV
40 70 mV
54 dB
54 dB
0.8 mA
0.1 A
0.5 A
4.2 4.5 4.8 V
3.2 3.5 3.8 V
100 µA
–100 µA
35 V
130 ºC
VO1
VO2
VO
VDIF1
VDIF2
VO
LINE1
VO
LINE2
VO
LOAD1
VO
LOAD2
RREJ1
RREJ2
Iq
I (S1) 1
I (S1) 2
VCH
VCL
ICH
ICL
VOVP
TTSD
IO1
IO2
PD1
PD2
Tj
TOP
Tstg
j-c
j-a
CH1
CH2
CH1
CH2
CH1
CH2
CH1
CH2
CH1
CH2
Ripple rejection
CH1
CH2
Overcurrent protection
starting current
CH1
CH2
Output control voltage
Output ON
Output OFF
Output ON
Output OFF
Output control current
V
V One minute
With infinite heatsink
Stand-alone without heatsink
Stand-alone without heatsink
V
A
A
W
W
ºC
ºC
ºC
ºC/W
ºC/W
40
–13
VIN
0.07
0.4
18
1.5
–40 to +125
–40 to +115
–40 to +125
5.5
66.7
(V
O1—
V
O2)
Line regulation
Load regulation
Equivalent Circuit Diagram
Standard Circuit Diagram
External Dimensions (unit: mm)
Features
● Single input dual output <sub output (5V/0.07A), main output (5V/0.4A)>
● Main output can be externally turned ON/OFF (with ignition switch, etc.)
<most suitable as memory backup power supply>
● Low standby current ( 0.8mA)
● Low dropout voltage 1V
●
Built-in dropping type overcurrent, overvoltage and thermal protection circuits
● TO220 equivalent 5-terminal full-mold package
12345
10.0
3.2
0.5
4.0
7.9
16.9
0.95
0.85
P1.7 • 4 = 6.8
4.2 ±0.2
2.8 ±0.2
2.6 ±0.1
3.9
±0.7 ±0.7
±0.15
8.2 ±0.7
0.45–0.1
+0.2
–0.1
+0.2
(2.0)
5.0 ±0.6
(8.0)
(17.9)
(4.6)
(4.3)
1. VIN
2. VC (on/off)
3. GND
4. VO1
5. VO2
a: Part No.
b: Lot No.
(Forming No. 1101)
VIN
VC
VO1
VO2
GND
1
2
4
5
3
REF
DRIVE
DRIVE
DET
OCP
ERR
TSD
OCP
DET
OVP
CONT
ERR
CIN
VC
+
D1
VIN
1
SI-3101S
GND
CO1
VO2
D3
234
5
D2
VO1
++
CO2
12
Dropper Type Regulator ICs [2-output] SI-3101S
Notes:
*1. Since PD(max) = (VIN – V O) • IO1 + (VIN – V O2) • IO2 = 18 (W), VIN (max), IO1 (max) and IO2 (max) may be limited depending on
operating conditions. Refer to the Ta—PD curve to compute the corresponding values.
*2. Refer to the dropout voltage.
*3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.05A or IO2 = 0.3A) drops to –5%.
*4. Overvoltage protection circuit is built only in CH2 (VO2 side).
*5. The indicated temperatures are junction temperatures.
*6. All terminals, except VIN and GND, are open.
CO1 : Output capacitor (47 to 100µF, 50V)
CO2 : Output capacitor (47 to 100µF, 50V)
*1 CIN : Input capacitors (approx. 47µF).
Tantalum capacitors are recommended for CO1, CO2
and CIN, especially at low temperatures.
*2D1, D2, D3 :Protection diode.
Required as protection against reverse biasing
between input and output.
(Recommended diode: Sanken EU2Z.)
*6
*1
*1
*1
*2
*3
*3
*4
*5
±0.2
±0.2
±0.3
±0.2
±0.2
b
a
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
1
2
3
4
5
6
(V)
5
(A)
I=0
V=
O1
C
4.5V
6V
14V
22V
V=
IN
0
0510152025
4.9
5.0
5.1
0mA
50mA
70mA
(A)
I=0
O2
(V)
5V =
C
IO1=
0
00.05
1
2
3
4
5
6
0.1 0.15
(V)
5
(A)
I=0
V=
O2
C
22V
14V
6V
V =
4.5V
0102030 6040 50 70
4.9
5.0
5.1
0
(A)
I=0
O2
(V)
5V =
C
V=
IN
6V 14V 22V
0 0.1 0.2 0.3 0.60.4 0.5
4.9
5.0
5.1
0
I=0
O1
5V =
C
V=
IN
6V,14V
22V
0102468
0
6
5
4
2
1
3∞
71.4Ω
100Ω
Load resistor
020
10
5
051015
(A)
I=0
O1
(V)
0
V=
c
0123456
0
5
6
4
3
2
1
V=
IN
14V, 22V 6V
10
0
20 30 40
1
2
3
4
5
6
VO1
(V)
5V =
C
(mA)
I
=5I =
O1 O2 VO2
0 130 140 150 160
0
1
2
3
4
5
6
(V)
6V =
(mA)
I
=5I =
O1 O2
IN
IN
0--20--30 20 6040 80 100
0
5
10
15
20
200 • 200 • 2mm (2.3
ºC/
W)
100 • 100 • 2mm (5.2
ºC/
W)
75 • 75 • 2mm (7.6ºC/W)
115
OFF ON
0
0510152025
4.9
5.0
5.1
(A)
I=0
O1
(V)
5V =
C
0.5A
0.3A
I=
O2
0A
13
Output current IO (A)
■ Line Regulation (2)
Output voltage VO (V)
Output voltage VO2 (V)
Output voltage VO (V) Output voltage VO1 (V)
Output voltage VO1 (V)
Output voltage VO (V)
Output voltage VO (V)
Input voltage V IN (V)
■ Line Regulation (1)
Output voltage VO (V)
Input voltage VIN (V)
Input voltage VIN (V)
Input voltage VIN (V) Input voltage VIN (V)
■ Load Regulation (1)
■ Rise Characteristics ■ Quiescent Circuit Current
■ Thermal Protection Characteristics
Quiescent current lq (mA)
■ Overcurrent Protection Characteristics (1)
Output current IO (A)
Output voltage VO2 (V)
■ Overcurrent Protection Characteristics (2)
■ ON/OFF Control Characteristics
Output ON/OFF control voltage VC (V)
Ambient temperature Ta (ºC)
Output current IO (mA)
Output voltage VO (V)
■ Load Regulation (2)
Output current IO (A)
Operating temperature Ta (ºC)
Power Dissipation PD (W)
■ Ta—PD Characteristics
■ Overvoltage Protection Characteristics
With silicone grease G746
(Shin-Etsu Chemical)
Heatsink: aluminum
With infinite heatsink
Without heatsink
Note on Thermal Protection Characteristics:
The thermal protection circuit is intended for protection against heat
during instantaneous short-circuiting. Its operation, including reliability,
is not guaranteed for short-circuiting over an extended period of time.
(A)
(V)
Electrical Characteristics
Dropper Type Regulator ICs [2-output] SI-3101S
Features
● Single input dual output <sub output (5V/0.04A), main output (5V/0.1A)>
● Main output can be externally turned ON/OFF (with ignition switch, etc.)
<most suitable as memory backup power supply>
● Low standby current ( 0.8mA)
● Low dropout voltage 1V
●
Built-in dropping type overcurrent, overvoltage and thermal protection circuits
● TO220 equivalent 5-terminal full-mold miniature package
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
External Dimensions (unit: mm)
Equivalent Circuit Diagram
Standard Circuit Diagram
Parameter Symbol min typ max Unit Conditions
Ratings
(Ta=25ºC)
DC input voltage
Battery reverse connection
Output control terminal voltage
Output current
Power Dissipation
Output voltage
Dropout voltage
Input voltage
Quiescent circuit current
Overvoltage protection starting
voltage
Thermal protection starting
temperature
(Tj = 25ºC, VIN = 14V unless otherwise specified)
Junction temperature
Operating temperature
Storage temperature
Junction to case thermal resistance
Junction to ambient-air thermal
resistance
VIN
VINB
VC
VIN
IO = 0.04A
IO = 0.1A
IO1 0.04A
IO2 0.1A
VIN = 6 to 30V, IO = 0.04A
IO1 = 0 to 0.04A
VIN = 6 to 30V, IO = 0.1A
IO2 = 0 to 0.1A
IO1 = 0A, VC = 0 V
VC = 4.8V
VC = 3.2V
f = 100 to 120Hz
f = 100 to 120Hz
I
O1
=
0 to 0.04A
I
O2
=
0 to 0.1A
630V
4.80 5.00 5.20 V
4.80 5.00 5.20 V
–0.1 0.1 V
1.0 V
1.0 V
10 50 mV
10 50 mV
30 70 mV
40 70 mV
54 dB
54 dB
0.8 mA
0.06 A
0.15 A
4.2 4.5 4.8 V
3.2 3.5 3.8 V
100 µA
–100 µA
30 V
151 ºC
VO1
VO2
VO
VDIF1
VDIF2
VO
LINE1
VO
LINE2
VO
LOAD1
VO
LOAD2
RREJ1
RREJ2
Iq
I (S1) 1
I (S1) 2
VCH
VCL
ICH
ICL
VOVP
TTSD
IO1
IO2
PD1
PD2
Tj
TOP
Tstg
j-c
j-a
CH1
CH2
CH1
CH2
CH1
CH2
CH1
CH2
CH1
CH2
Ripple rejection
CH1
CH2
Overcurrent protection
starting current
CH1
CH2
Output control voltage
Output ON
Output OFF
Output ON
Output OFF
Output control current
V
VOne minute
With infinite heatsink
Stand-alone without heatsink
Stand-alone without heatsink
V
A
A
W
W
ºC
ºC
ºC
ºC/W
ºC/W
35
–13
VIN
0.04
0.1
22
1.8
–40 to +150
–40 to +105
–40 to +150
5.5
66.7
Line regulation
Load regulation
a
b
12345
10.0
3.2
0.5
4.0
7.9
16.9
0.95
0.85
P1.7 • 4 = 6.8
4.2 ±0.2
2.8 ±0.2
2.6 ±0.1
3.9±0.7
±0.7 ±0.7
8.2±0.7
0.45
–0.1
+0.2
–0.1
+0.2
(2.0)
5.0 ±0.6
(8.0)
(17.9)
(4.6)
(4.3)
1. VIN
2. VC (on/off)
3. GND
4. VO1
5. VO2
a: Part No.
b: Lot No.
(Forming No. 1101)
VIN
VC
VO1
VO2
GND
1
2
4
5
3
REF
DRIVE
DRIVE
DET
OCP
ERR
TSD
OCP
DET
OVP
CONT
ERR
CIN
VC
+
D1
VIN
1
SI-3102S
GND
CO1
VO2
D3
234
5
D2
VO1
++
CO2
14
Dropper Type Regulator ICs [2-output] SI-3102S
Notes:
*1. Since PD(max) = (VIN – V O) • IO1 + (VIN – V O2) • IO2 = 22 (W), VIN (max), IO1 (max) and IO2 (max) may be limited depending on
operating conditions. Refer to the Ta—PD curve to compute the corresponding values.
*2. Refer to the dropout voltage.
*3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.04A or IO2 = 0.1A) drops to –5%.
*4. Overvoltage protection circuit is built only in CH2 (VO2 side).
*5. The indicated temperatures are junction temperatures.
*6. All terminals, except VIN and GND, are open.
CO1 : Output capacitor (47 to 100µF, 50V)
CO2 : Output capacitor (47 to 100µF, 50V)
*1 CIN : Input capacitors (approx. 47µF).
Tantalum capacitors are recommended, for CO1,
CO2 and CIN, especially at low temperatures.
*2D1, D2, D3 :Protection diode.
Required as protection against reverse biasing
between input and output.
(Recommended diode: Sanken EU2Z.)
*6
*1
*1
*1
*2
*3
*3
*4
*5
Channel-channel voltage difference
(V
O1—
V
O2)
±0.2
±0.2
±0.2
±0.2
±0.3
±0.15
0
4.90
4.95
5.00
5.05
5.10
4.85 5101520253035 0
4.90
4.95
5.00
5.05
5.10
4.85 5101520253035 0
4.90
4.95
5.00
5.05
5.10
4.85 10 20 30 5040
VIN = V C
IO2 = 5mA
VIN = V C
IO1 = 5mA
VC = 0 V
IO1 = 0 A
0A
20mA
40mA
IO1 = 0A
50mA
100mA
IO2 =
VIN = V C
6V
14V
30V
VIN =
0
4.90
4.95
5.00
5.05
5.10
4.85 20 40 60 10080
0
2
1
3
4
5
6
020 40 60 12010080 0
1
2
3
4
5
6
00.1 0.2 0.50.40.3
26
1
2
3
4
5
6
028 30 38363432
0
2
3
4
5
6
0
1
123 56740
4
6
8
10
12
0
2
51015 25303520
VIN = V C
VIN = V C
IO2 = 5mA
VIN = V C
IO1 = 5mA
VIN = V C
IO2 = 5mA
0
1
2
3
4
5
6
012 6543
VIN = 14V
IO2 = 5mA
100
1
2
3
4
5
6
0120 140 240220200180
–
40
5
10
15
20
25
0
–
20 0 20 16014012060 80 10040
VIN = 6 V
IO1 = I O2 = 5mA
6V,14V
30V
VIN =
6V
14V
30V
VIN =
6V
14V
30V
VIN =
IO1 = 0 A
20mA
40mA
200 • 200 • 2mm
(2.3ºC/W)
100 • 100 • 2mm
(5.2ºC/W)
75 • 75 • 2mm
(7.6ºC/W)
OFF
ON
15
Output current IO (mA)
■ Line Regulation (2)
Output voltage VO (V)
Output voltage VO2 (V)
Output voltage VO (V) Output voltage VO1 (V)
Output voltage VO1 (V)
Output voltage VO (V)
Output voltage VO (V)
Input voltage VIN (V)
■ Line Regulation (1)
Output voltage VO (V)
Input voltage V IN (V)
Input voltage VIN (V)
Input voltage VIN (V) Input voltage VIN (V)
■ Load Regulation (1)
■ Rise Characteristics ■ Quiescent Circuit Current
■ Thermal Protection Characteristics
Quiescent current lq (mA)
■ Overcurrent Protection Characteristics (1)
Output current IO2 (A)
Output voltage VO2 (V)
■ Overcurrent Protection Characteristics (2)
■ ON/OFF Control Characteristics
Output ON/OFF control voltage VC (V)
Ambient temperature Ta (ºC)
Output current IO (mA)
Output voltage VO (V)
■ Load Regulation (2)
Output current IO (mA)
Operating temperature Ta (ºC)
Power Dissipation PD (W)
■ Ta—PD Characteristics
■ Overvoltage Protection Characteristics
With silicone grease G746
(Shin-Etsu Chemical)
Heatsink: aluminum
With infinite heatsink
Without heatsink
Note on Thermal Protection Characteristics:
The thermal protection circuit is intended for protection against heat
during instantaneous short-circuiting. Its operation, including reliability,
is not guaranteed for short-circuiting over an extended period of time.
VO1
VO2
Electrical Characteristics
Dropper Type Regulator ICs [2-output] SI-3102S
Parameter Symbol Unit ConditionsRatingsApplicable terminals
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
Terminal voltage
Storage temperature
NMI judge voltage
VSC output voltage
VS output voltage
Reset signal output time
Reset cycle
Standby signal output time
(Ta = 25°C unless otherwise specified)
Operating temperature
Power dissipation
VIN (1)
VIN (2)
VSC
V
CC = 5.2 to 16V, I
O
= –350mA
BAI = 4.2 to 16V, ISC = –0.2mA
NMIC = 0V
V
5
4
10
75
50
25
5.03
3.8
4.97
4.2
V
0.3
5.1 V
10
5
V
µs
ms
µs
VS
VS–VSC voltage difference VCC = 5.2V, ISC = –50mA0.3 V∆VS
BAI input current BAI = 4.9 to 16V, ISC = –0.2mA0.6 mAIBAI
VCC input current VCC = 3 to 16V 5 mAICC
VB input current VCC = 3 to 16V25 mAIB
VS input current VCC = BAI = 3 to 16V, ISC = 0 m A20 mAIS
NMIC input current VCC = BAI = 14V–0.1 –0.4 mAINMIC
W/D input current VCC = BAI = 14V–0.1 –0.4 mAIW/D
RSTTC input current VCC = BAI = 14V–0.1
5
–0.4 mAIRTC
4.9
–0.04
–0.04
–0.04
0.12
VNIL
∆VN
VNOH
VNOL
VSOH
VSOL
VROH
VROL
VUOH
VUOL
VTOH
VTOL
TNR
W/D signal stop detect period 10 12.5
50
80
10
2
40
5
VS–0.5
VS–0.5
VS–0.5
VS–0.5
VS–0.5
W/D fail judge frequency
kHzFFH
Out enable release time
msTWE
msTWS
Reset period 20
40
60
msTRP
TRC
Reset release time 90
60
30
15
msTRE
Standby release time 20 ms
V
V
V
V
V
V
V
V
V
V
TST
0.6
0.6
0.6
0.6
0.6
TRS
Tstg
Top
PD
Lo
NMI output voltage
STBY output voltage
RESET output voltage
OUTE output voltage
OUTE output voltage
Isource = –1mA
Isink = 0.5mA
Isource = –1mA
Isink = 0.5mA
Isource = –1mA
Isink = 0.5mA
Isource = –1mA
Isink = 0.5mA
Isource = –1mA
Isink = 0.5mA
Hi
Lo
Hi
Lo
Hi
Lo
Hi
Lo
Hi
Lo
V
°C
°C
WTa = 25°C
–0.3 to 32
BAI, VCC, VNMIC
VS, NMIC, RSTTC, OUTE
VSC, NMI, RESET, OUTE
W/D, STBY
—
—
—
V–0.3 to 7
–40 to +125
–40 to +105
1.4
Standard Connection Diagram
Circuit Block Diagram
Timing Chart
External Dimensions (unit: mm)
Features
● High accuracy output of 5V±30mV
● Memory backup power supply 4V±0.2V
● Power on reset function
● Supply voltage monitor function
● Watch dog timer
● CR not required for setting external time constant
Dropper Type System Regulator ICs SI-3322S
16
Notes: The direction of current flowing into the IC is positive (+).
VCC
VNIL
VNIL+∆VN
VS
0V
VSC
NMI
TST
TRE
TWS
TRP
TRC TWE
TNR
TRS
STBY
RESET
OUTE
W/D
OUTE
HI or Lo
Power on Power off
W/D input stop
(microcomputer
runaway)
W/D input start
(microcomputer
resets)
0V
(BAI=14V)
IG. SW
BATT
47µF
47µF
47µF
A/D converter,
I/O circuit, etc.
68µF
+
+
+
+
120Ω
R1
R2
6
VCC VCC AVCC
OUTE OUTE
VBVSVSC
NMI
BAI
GND
VNMIC
1
8
13 11 10 16 14
5432
9
15
12
SI-3322S
OPEN or GND
Logic circuit
Micro-
computer
NMI
NMI
Control
STBY STBY
RESET RESET
NMIC W/D W/D GND
RSTTC
R1,R2: NMI judge voltage (5V typ) variable resistor
NMI judge voltage (R1 + R2) • 2.5V/R2
R1, R2 2k
Normally, VNMIC terminal is open.
RSTTC: Normally open.
GND connected when TRE
is to be halved.
VCC VBVSVSC
NMI
VNMIC
BAI
6
1
GND 8
+ + +
5 4
Start
circuit
NMI judge
circuit
Reference
oscillation
circuit
Main
regulator
Backup regulator
Current
limit circuit
3 2
9
15
+
–
STBY
12
14
RESET
RSTTC
16
W/D
1011
Counter
OUTE
control
circuit
OUTEOUTE
13
NMIC
STBY
control
circuit
RESET
control
circuit
Frequency
comparator
+
–
+
–
Index area
123
SI-3322S
SKA
Coplanarity
(height difference among leads)
0.1mm max.
Adhesive surface
Lot
Lot
• 45°
2.35
2.65
10.10
10.50
7.40
7.60
0.25
0.75
0.40
1.27
10.00
10.65
0.10
0.30
0.23
0.32
0.33
0.51
1.27 BSC
0° to 8°
Hysteresis
17
Electrical Characteristics
051015 20 25
VS (V)
VCC (V)
5.03
5.02
5.01
5
4.99
4.98
4.97
5.03
5.02
5.01
5
4.99
4.98
4.97 0
1
2
3
4
5
6
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VS (V)
IO (A)
0 0.5 1 1.5 2
0
1
2
3
4
5
6
VS (V)
IO (A)
051015 20
0
0
100
200
300
400
500
0
100
200
300
400
500
5
10
15
20
0
1
2
3
4
5
IS (mA)
VCC (V)
051015 20
0
5
10
15
20
IB (mA)
VCC (V)
051015 20
0
2
4
ICC (mA)
VCC (V)
3
1
5
0246810
VS (V)
VCC (V)
0
020406080100 120
5101520 0
1
2
3
4
5
6
0246810
0
1
2
3
4
5
6
4.5 4.7 4.9 5.1 5.3 5.5
051015 20
VSC (V)
VSC (V)
IBAI (µA)
∆VS (mV)
NMI (V)
BAI (V) ISC (A)
BAI (V) ISC (mA) VCC (V)
IO
= 0 A
0.4A
IO
= 0 A
0.4A
VCC
= 5.2V 12V
VCC
= 7 V
12V
No load
No load
No load
Dropper Type System Regulator ICs SI-3322S
■ VS Load Regulation
■ VS Line Regulation ■ VS Rise Characteristics
■ VCC Input Current ■ VB Input Current
■ BAI Input Current
■ VSC Rise Characteristics ■ VSC Overcurrent Protection Characteristics
■ VS Input Current
■ VS Overcurrent Protection Characteristics
■ NMI Judge Voltage Characteristics
■ VS-VSC Voltage Difference
Parameter Symbol Unit RemarksRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
DC input voltage
Output control terminal voltage
Output current CH1
CH2
MODE terminal input voltage
W/D/C terminal input voltage
TC terminal input voltage
CK terminal input voltage
Vo1-fail terminal output voltage
Reset terminal output voltage
Junction temperature
Storage temperature
Thermal resistance
(junction to case)
Thermal resistance
(junction to ambient air)
Input voltage
CH1
Output voltage CH1
CH2
CH1
Dropout voltage CH1
CH2
Ripple rejection CH1
CH2
Quiescent circuit current
GND current
CH1
CH2
CH1
CH2
EN output control voltage
ON
OFF
Vo1-fail terminal LOW voltage
Vo1-fail terminal HI voltage
Reset terminal LOW voltage
Reset terminal HI voltage
CH1
Reset detect voltage
CH2
CH1
CH2
Power on reset delay time
W/D time
W/D pulse time
MODE terminal control voltage
ON
OFF
W/D/C terminal control voltage
ON
OFF
CK terminal control voltage
ON
OFF
VIN
EN
Io1
Io2
MODE
W/D/C
TC
CK
Vo1-fail
RESET
Tj
Tstg
j-c
j-a
–13 to 35
40
–0.3 to 35
40
0.4
0.2
–0.3 to 7
–40 to 150
–40 to 150
4.1
38
V
IN
Vo1
Vo1
Vo2
V
DIF
11
V
DIF
12
V
DIF
2
R
REJ
1
R
REJ
2
I
q
I
GND
Is11
Is21
Is21
Is22
V
ENth
I
ENH
1
I
ENH
2
I
ENL
V
fail
L
V
fail
H
V
RS
L
V
RS
H
Vo1thH
Vo1thL
Vo2thH
Vo2thL
∆Vo1th
∆Vo2th
t
dly
t
wd
t
wdp
Vmodeth
ImodeH
ImodeL
Vw/d/cth
Iw/d/cH
Iw/d/cL
Vckth
IckH
IckL
Io1 = 0.4A
Io1 = 0.2A, Tj = 25°C
Io2 = 0.2A
f = 100 to 200Hz
V
IN
= 16V, EN = 0V
V
IN
= 35V, EN = 0V
Io1 = Io2 = 0.2A
Vo1 = 4.5V
Vo2 = 2.8V
Vo1 = 0V
Vo2 = 0V
Tj =
–
40 to 125°C
*8
EN = 6.4V, Tj =
–
40 to 125°C
EN = 3.51V, Tj =
–
40 to 125°C
EN = 0V, Tj =
–
40 to 125°C
Isink = 250µA, (Pull-up resistance 20kΩ typ)
Isource = 15µA
Isink = 250µA, (Pull-up resistance 20kΩ typ)
Isource = 15µA
Vrs, Vfail 4.5V
Vrs, Vfail 0.8V
Vrs 3.0V
Vrs 0.8V
∆Vo1th = Vo1thH-Vo1thL
∆Vo2th = Vo2thH-Vo2thL
Min. set time: 6mS
Min. set time: 4mS
Min. set time: 400µS
MODE = 5V
MODE = 0V, Tj =
–
40 to 125°C
*7
W/D/C = 5V
W/D/C = 0V, Tj =
–
40 to 125°C
Min. clock pulse time = 5µS (Duty 50%)
CK = 5V
CK = 0V, Tj =
–
40 to 125°C
V
V
V
db
µA
mA
mA
A
A
V
µA
V
V
V
V
V
V
V
V
V
V
S
S
S
V
µA
V
µA
V
µA
5.00
5.00
3.30
54
54
10
50
5
70
0.72 • Rtc • Ctc
0.54 • Rtc • Ctc
0.06 • Rtc • Ctc
Vo1+V
DIF
1
*3
4.90
4.85
3.15
0.402
0.201
0.402
0.201
1.0
0.9
–1.0
Vo1
–
0.8V
*5
Vo1–0.8V
*5
4.05
3.00
0.70 • Rtc • Ctc
0.52 • Rtc • Ctc
0.04 • Rtc • Ctc
1.0
–1.0
1.0
–1.0
1.0
–1.0
35
*4
5.10
5.15
3.45
0.5
0.25
0.5
50
250
10
100
1.80
0.80
1.80
0.80
3.5
3.5
50
30
1.0
0.5
0.5
Vo1
•
0.97
Vo2 • 0.985
0.255
0.105
0.74 • Rtc • Ctc
0.56 • Rtc • Ctc
0.08 • Rtc • Ctc
3.0
200
1.0
3.0
200
1.0
3.0
200
1.0
V
V
A
V
°C
°C
°C/W
°C/W
Reverse connection 1 min max.
400mS
400mS
With infinite heatsink
With glass epoxy + copper foil board (size 5.0 x 7.4cm;
t: glass epoxy = 1.6mm/copper foil = 18µm)
External Dimensions (unit: mm)
Features
● Single input dual output (ch1: 5V/0.4A, ch2: 3.3V/0.2A)
● Power on reset function
● Watchdog timer
● Built-in drooping type overcurrent and thermal protection circuits (ch1)
Dropper Type System Regulator ICs [Surface-mount 2-output]
SPF3004
18
Notes:
*3: Refer to dropout voltage.
*4: Since PD(max) = {(VIN– V O1) • (IO1+ IO2)} + (VIN • Iq) + {(VO1– VO2) • IO2}= 30W, VIN (max), IO1(max) and IO2(max) may be limited
depending on operating conditions.
*5: The Vo1-fail and RESET terminals are pulled up in the IC; may be directly connected to logic circuits.
*6: The thermal protection function is built in VO1 (CH1 side) only. The design thermal protection starting temperature is 155
°C (min.) and 165°C (typ). These values represent the design warranty.
*7: The threshold voltage at the W/D/C terminals is determined by the presence/absence of WD operation (occurrence of
RESET signal pulses). The W/D/C function is assumed to be OFF during the period when RESET pulses occur.
*8: The TOFF-EN operation (VEN: 5V 0V) for Tj=150°C is 16mS (0.32V/mS) max.
V
IN
= Vo1+V
DIF
1 to 18V,
Io1 = 0 to 0.4A, Tj = –40 to 125°C
V
IN
= Vo1+V
DIF
1 to 18V,
Io1 = 0 to 0.4A, Tj = –40 to 150°C
V
IN
= Vo2+V
DIF
1+V
DIF
2 to 18V,
Io1 = 0 to 0.2A
12.2±0.2
1.0
2.5±0.2 7.5±0.2
10.5±0.2
1.27±0.25
16
18
9
+0.1
–0.05
0.4+0.15
–0.05
0.25+0.15
–0.05
2.0+0.2
–0.8
Fin
thickness
Standard Connection Diagram
Timing Chart
+ +
+
+
D1
D2
Vin
EN
MODE
Cin
GND
W/D/C CK TC
RESET
Vo1
Co1
Rtc
Ctc
Co2
Vo1
Vo2
Vo1 fail
Battery
SPF3004
Cin: Capacitor (39µF) for oscillation prevention
CO1: Output capacitor (39µF)
CO2: Output capacitor (39µF)
Tantalum capacitors are recommended especially for low
temperatures.
D1, D2: Protection diodes.
Required as protection against reverse biasing between input
and output (Recommended diode: SANKEN EU2Z).
Vin
EN
Vo1
Vo1 fail
(Vo1 pull-up)
Vo1 pull-up status
Reset
operation
Reset
operation
OCP
operation
EN (ON) operation EN (OFF) operation
OCP
operation
W/D/C
(Vo1 system connection)
W/D
Stop period
TC
(3.3 pull-up)
Vo2
RESET
CK
Open status
Open status
twdp
twd
tdly tdly
tdly-twdp
Vmodeth
Vo2thL
Vo2thH
Vo1thH Vo1thL
(Ta=25ºC)
Overcurrent protection
starting current
Residual current
at a short
EN output control
current
Reset detect voltage
hysteresis width
MODE terminal
control current
W/D/C terminal
control current
CK terminal control
current
Load
Load
MODE
(Vo1 system connection)
19
Dropper Type System Regulator ICs [Surface-mount 2-output]
SPF3004
Electrical Characteristics
024 6810
0
4
2
6
-40 0 25 50 85 125 150
0
20
10
40
30
0 0.2 0.4 0.6
0
0.5
1.0
010203040
4.90
5.00
5.10
IO1=0A
0.2A
0.4A
010203040
3.40
3.30
3.50
IO2=0A
0.1A
0.2A
1234
0
4
2
6
0
5.10
5.00
4.90
0 0.1 0.2 0.3 0.4
VIN=6V
10V
14V
18V
0 0.05 0.10 0.15 0.20
0
3.50
3.40
3.30
VIN=6V
10V
14V
18V
0
20
40
10 20 30 40
IO1=0.4A
IO1=0.2A
IO1=0A
IO2=0A
0.2A
IO1=0A
0.4A
100 120 140 160 200180
2
6
4
IO1=5mA
0 0.5 1.0
0
4
2
6
0 0.2 0.4 0.6
0
4
2
VIN=6V
10V
14V
18V
VIN=6V
10V
14V
18V
Infinite heatsink equivalent
(Tc=25°C)
Copper foil area
(5.0•7.4mm, t=1µm)
■ Line Regulation (V01)
■ Rise Characteristics of Output Voltage ■ Line Regulation (V02)
■ Load Regulation (V02)■ Dropout Voltage (V01)
■ Thermal Protection Characteristics
■ Overcurrent Protection Characteristics (V01)■ Overcurrent Protection Characteristics (V02)
■ GND Current
■ Load Regulation (V01)
■ Ta—PD Characteristics
■ EN Terminal Output Voltage
Output voltage VO1 (V)
GND current IGND (mA)
Output voltage VO1 (V) Output voltage VO1 (V)
Output voltage VO1 (V)
Output voltage VO2 (V)
Output voltage VO2 (V)
Output voltage VO1, VO2 (V)
Dropout voltage Vdif1 (V)
Output voltage VO2 (V)
Output voltage VO1 (V)
Power dissipation PD (W)
Output current IO1 (A)
Input voltage VIN (V)Input voltage V IN (V)
EN terminal voltage VEN (V)
Output current IO2 (A) Output current IO1 (A)
Output current IO2 (A)Input voltage VIN (V)
Ambient temperature Ta (ºC)
Input voltage VIN (V)
Output current IO1 (A)
Operating temperature Ta (ºC)
Parameter Symbol Unit RemarksRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
DC input voltage
Vo1, Vo2 output control terminal voltage
Vo2 output control terminal voltage
Output current CH1
CH2
TC terminal input voltage
CK terminal input voltage
W/D/C terminal input voltage
Reset terminal output voltage
Power dissipation
Junction temperature
Operating temperature
Storage temperature
Input voltage
Output voltage CH1
CH2
Dropout voltage CH1
CH2
Ripple rejection CH1
CH2
Quiescent circuit current
GND current
CH1
CH2
CH1
CH2
EN output control voltage
ON
OFF
Reset terminal LOW voltage
Reset terminal HI voltage
Reset detect voltage CH
Power on reset delay time
W/D time
W/D pulse time
CK terminal control voltage
ON
OFF
Vc output control voltage
Vc output control current
W/D/C terminal control voltage
ON
OFF
VIN1
VIN2
EN
VC
Io1
Io2
TC
CK
W/D/C
RESET
PD1
PD2
Tj
Top
Tstg
j-c
j-a
–13 to 35
–0.3 to 35
–0.3 to 35
0.4
0.2
–0.3 to 7
18.6
2.97
–40 to 150
–40 to 105
–40 to 150
6.7
42
VIN1, 2
Vo1
Vo2
VDIF1
VDIF2
RREJ1
RREJ2
Iq
IGND
Is11
Is21
Is21
Is22
VENth
IENH
IENL
VRSL
VRSH
Vo1thH
Vo1thL
tdly
twd
twdp
Vckth
IckH
IckL
Vcth
IcH
IcL
Vw/d/cth
Iw/d/cH
Iw/d/cL
V
IN
1 = 6 to 18V, Io = 0 to 0.3A
V
IN
2 = 6 to 18V, Io = 0 to 0.3A
f = 100 to 120Hz
VIN1 = 16V, VEN = 0 V
VIN1 = 35V, VEN = 0 V
Io1 = Io2 = 0.2A
Vo1 = 4.5V
Vo2 = 4.5V
Vo1 = 0V
Vo2 = 0V
EN = 5V
EN = 0V
Isink = 250µA
(Pull-up resistance 20kΩ typ)
Isource = 15µA
Vrs 4.5V
Vrs 0.8V
Min. set time: 6mS
Min. set time: 4mS
Min. set time: 400µS
VCK = 5 V
VCK = 0 V
Vc = 5V
Vc = 0V
VW/D/C = 5 V
VW/D/C = 0 V
V
V
V
db
µA
mA
mA
A
A
V
µA
V
V
V
V
S
S
S
V
µA
V
µA
V
µA
5.00
5.00
54
54
10
50
5
70
1.26 • Rtc • Ctc
1.03 • Rtc • Ctc
0.13 • Rtc • Ctc
Vo1+V
DIF
1
4.85
4.85
0.402
0.201
0.402
0.201
0.9
–1.0
Vo1-0.8V
4.05
1.18 • Rtc • Ctc
0.93 • Rtc • Ctc
0.07 • Rtc • Ctc
1.0
–1.0
1.0
–1.0
1.0
–1.0
35
5.15
5.15
0.5
0.5
50
250
10
100
1.8
0.8
1.8
0.8
3.5
50
1.0
0.5
Vo1• 0.97
1.35 • Rtc • Ctc
1.13 • Rtc • Ctc
0.19 • Rtc • Ctc
3.0
200
1.0
3.5
300
1.0
3.0
200
1.0
V
V
V
A
V
W
°C
°C
°C
°C/W
°C/W
Reverse connection 1 min max.
With an infinite heatsink mounted.
With an infinite heatsink mounted.
External Dimensions (unit: mm)
Features
● Dual input and dual output (ch1: 5V/0.4A, ch2: 5V/0.2A)
● Power on reset function
● Watchdog timer
● Built-in drooping type overcurrent and thermal protection circuits (ch1)
Dropper Type System Regulator ICs [Surface-mount 2-output]
SPF3006
20
12.2±0.2
1.0
2.5±0.2 7.5±0.2
10.5±0.2
1.27±0.25
16
18
9
+0.1
–0.05
0.4+0.15
–0.05
0.25+0.15
–0.05
2.0+0.2
– 0.8
Notes: *1: With glass epoxy + copper foil board (size 5.0 • 7.4cm; t: glass epoxy = 1.6mm / copper foil = 18µm)
*1
*1
*2, 3
*4
Standard Connection Diagram
Timing Chart
Circuit Block Diagram
Vin1
(3 Pin)
Vo1
(4 Pin)
Vo2
(7 Pin)
RESET
(14 Pin)
W/D/C
(11 Pin)
Vin2
(6 Pin)
Vc
(5 Pin)
GND
(1,9,12,13 Pin)
EN
(2 Pin)
TC
(8 Pin)
CK
(10 Pin)
EN
TSD
Vc
(Vo2: EN)
Drive1
OCP1
Vo1
RESET
W/D
Drive2
OCP2
Err.
Err.
D
E
T
D
E
T
Battery
Cin Vc
GND
D2
D1
Vin1
Vo2
Vo1
Co1
Load
Load
Co2
Vin2
EN
CK W/D/C
Tc
RESET Rtc
Ctc
–
–
–
SFP3006
3Pin 4Pin
14Pin
7Pin
8Pin
11Pin10Pin
1,9,
12,13Pin
2Pin
6Pin
5Pin
Vin1,
Vin2
(+B)
EN
Vo1
(BACK UP power supply)
Vo2
(Main power supply)
Vo
TC
CK
W/D/C
RESET tdly
twd
twdp
W/D OFF
mode
ENthH
Vo1thH
ENthL
Vo1thL
* The regulator IC may be used only
with Vo1 (single output power
supply) by selecting NC (open) for
5Pin:Vc, 6Pin:Vin2 and 7Pin: Vo2.
(Ta=25ºC)
Min. clock pulse time: 5µs (Duty 50%)
Thermal resistance
(junction to case)
Thermal resistance
(junction to ambient air)
Overcurrent protection
starting current
Residual current
at a short
EN output control
current
CK terminal control
current
W/D/C terminal control
current
Notes:
*2: Refer to Dropout Voltage.
*3: Since PD(max) = (VIN– V O1) • IO1+ (VIN2– VO2) • IO2 + (VIN • Iq) = 22W, VIN(max), IO1(max) and IO2(max) may be limited
depending on operating conditions.
*4: The RESET terminal is pulled up in the IC; may be directly connected to logic circuits.
*6: The thermal protection function is built in VO1 (CH1 side) only. The design thermal protection starting temperature is 151
°C (min.) and 165°C (typ). These values represent the design warranty.
Fin
thickness
Cin: Capacitor (39µF) for oscillation prevention
CO1: Output capacitor (39µF)
CO2: Output capacitor (39µF)
Tantalum capacitors are recommended particularly for low
temperatures (tantalum capacitors of about 0.47µ F in parallel).
D1, D2: Protection diodes.
Required for protection against reverse biasing between input
and output (Recommended diode: SANKEN EU2Z).
21
Dropper Type System Regulator ICs [Surface-mount 2-output]
SPF3006
Electrical Characteristics
024 6810
0
4
2
6
-50 0 50 100 150
0
8
4
20
16
12
02 46 810
0
6
4
2
051015 20 25 30
4.95
5.00
4.90
5.10
5.05
100 125 150 175 200
0
4
2
6
5.10
5.00
5.05
4.90
4.95
051015 2520 30 0 0.1 0.2 0.3 0.4
4.90
5.10
5.00
5.05
4.95
0 0.05 0.10 0.15 0.20
4.90
5.10
5.00
5.05
4.95
0
0.2
0.4
0.6
0.20 0.4
0 0.2 0.4 0.6
2
0
6
4
0 0.2 0.60.4 0.8
0
6
4
2
VIN=6V
10V
14V
18V
VIN=6V
10V
14V
18V
IO1=5mA
Copper foil area
(5.0•7.4mm, t=18µm)
IO1=0A
0.2A
0.4A
IO2=0A
0.2A
0.4A
IO1=0A
0.1A
0.2A
IO1=0A
0.2A
0.4A
VIN=6V
10V
14V
18V
Ta=150°C
25°C
–40°C
0
0.2
0.4
0.6
0.10 0.2
Ta=150°C
25°C
–40°C
VIN=6V
10V
14V
18V
Infinite heatsink
equivalent
(Tc=25°C)
■ Rise Characteristics of Output Voltage (V02)
■ Rise Characteristics of Output Voltage (V01)■ Line Regulation (V01)
■ Load Regulation (V01)■ Load Regulation (V02)
■ Overcurrent Protection Characteristics (V02)
■ Dropout Voltage (V02)■ Overcurrent Protection Characteristics (V01)
■ Dropout Voltage (V01)
■ Line Regulation (V02)
■ Ta—PD Characteristics
■ Thermal Protection Characteristics
Output voltage VO2 (V)
Dropout voltage Vdif1 (V)
Output voltage VO1 (V) Dropout voltage Vdif2 (V)
Output voltage VO2 (V)
Output voltage VO1 (V)
Output voltage VO1 (V)
Output voltage VO1 (V)
Output voltage VO2 (V)
Output voltage VO1 (V)
Output voltage VO2 (V)
Power dissipation PD (W)
Output current IO2 (A)
Input voltage VIN (V)Input voltage V IN (V)
Ambient temperature Ta (ºC)
Output current IO1 (A) Output current IO2 (A)
Output current IO1 (A)Output current IO1 (A)
Output current IO2 (A)
Input voltage VIN (V)
Input voltage VIN (V)
Operating temperature Ta (ºC)
Features
● Output current of 3A (Ta = 25ºC, VIN = 8 to 18V)
● High efficiency of 82% (VIN = 14V, IO = 2 A )
● Requires 5 external components only
● Built-in reference oscillator (60kHz)
● Phase internally corrected
● Output voltage internally corrected
● Built-in overcurrent and thermal protection circuits
● Built-in soft start circuit
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Recommended Operating Conditions
External Dimensions (unit: mm)
Standard Circuit Diagram
Parameter Symbol
min typ max
min typ max
Unit Conditions
Ratings
(Ta=25ºC)
Input voltage
Output voltage
SW
OUT
terminal voltage
Power Dissipation
Output voltage
Load regulation
Line regulation
Discharge resistance
(VIN = 14V, IOUT = 2A, Tj = 25ºC unless otherwise specified)
Junction temperature
Storage temperature
Junction to case thermal resistance
Junction to ambient-air thermal
resistance
VIN
IO
VSWOUT
VO
VIN = 8 to 18V
VSSL = 0.2V
VIN = 0 V
4.80 5.00
82
50 60
5
3.1
5.20
100
V
50 mV
0.2
25
200
35
V
15 µA
kΩ
mV VO
LINE
VO
LOAD
Efficiency
IO = 0.5 to 3A
%
Oscillation frequency 70 kHzfOSC
Quiescent circuit current IO = 0 A
10 mAIq
Overcurrent protection starting
current
AIS
VSSL
ISSL
RDIS
PD1
PD2
Tj
Tstg
j-c
j-a
Low level voltage
Source current when low
Soft
start
terminal
V
A
With infinite heatsink
Stand-alone
V
W
W
ºC
ºC
ºC/W
ºC/W
35
3
–1
22
1.8
–40 to +150
–40 to +125
5.5
66.7
Notes:
*1. Efficiency is calculated by the following equation:
*2. A dropping-type overcurrent protection circuit is built in the IC.
*3. An external voltage may not be applied to the soft start terminal. As shown in the diagram to the right, use this IC in the
soft start mode with a capacitor or in the open-collector drive mode with a transistor. Leave the soft start terminal open
when not using it since it is already pulled up in the IC.
a
b
12345
10.0
3.2
0.5
4.0
7.9
16.9
0.95
0.85
P1.7 •4 =6.8
4.2±0.2
2.8±0.2
2.6 ±0.1
3.9
8.2 ±0.7
±0.7
0.45
–0.1
+0.2
–0.1
+0.2
(2.0)
5.0 ±0.6
(8.0)
(17.9)
(4.6)
(4.3)
1. VIN
2. SWOUT
3. GND
4. VS
5. SS
a: Part No.
b: Lot No.
(Forming No. 1101)
Parameter Symbol Unit Conditions
Ratings
Input voltage
Output current
Operating temperature
VIN
IO
Top
V
A
Ta—PD characteristicsºC
8
0.5
–40
18
3
+85
22
Switching Type Regulator ICs SI-3201S
VO • I O
VIN • I IN
= • 100 (%)
SS5 SS
C3
C3
5SS5
SI-3201S SI-3201S SI-3201S
SI-3201S
VIN VIN
C1
C3
C2
C1: 1000µF
C2: 1000µF
L 1: 250µH
D1: RK46 (Sanken)
VO
SWOUT
SW Tr L1
D1
VS
GND GND
GND
5
3
4
21
SS
++
a
e
d
b
g
c
h
i
f
a: Internal power supply
b: Thermal protection
c: Reference oscillator
d: Reset
e: Latch & driver
f: Comparator
g: Overcurrent protection
h: Error amplifier
i : Reference voltage
Cautions:
(1) A high-ripple current flows through C1 and C2. Use high-ripple
type 1000µF or higher capacitors with low internal resistance.
Refer to the respective data books for more information on
reliability and electrical characteristics of the capacitor.
(2) C3 is a capacitor used for soft start.
(3) L1 should be a choke coil with a low core loss for switching
power supplies.
(4) Use a Schottky barrier diode for D1 and make sure that the
reverse voltage applied to the 2nd terminal (SWOUT terminal) is
within the maximum ratings (–1V). If you use a fast-recovery
diode, the recovery voltage and the ON forward voltage may
cause a reversed-bias voltage exceeding the maximum ratings
to be applied to the 2nd terminal (SWOUT terminal). Applying a
reversed-bias voltage exceeding the maximum rating to the
2nd terminal (SWOUT terminal) may damage the IC.
(5) The 4th terminal (VS) is an output voltage detection terminal.
Since this terminal has a high impedance, connect it to the
positive (+) terminal of C2 via the shortest possible route.
(6) Leave the 5th terminal (soft start terminal) open when not
using it. It is pulled up internally.
(7) To ensure optimum operating environment, connect the high-
frequency current line with minimum wiring length.
*1
*3
*2
±0.2
±0.2
±0.2
±0.2
±0.3
±0.15
±0.7±0.7
= 10V
V 18V
IN =
7V
=
0
4.85 0.5 1.0 1.5 2.0 2.5 3.0
4.90
4.95
5.00
5.05
5.10
5.15
4.85
4.90
4.95
5.00
5.05
5.10
051015 20 25 30 35
I 0A
=
o
1A
=
2A
=
3A
=
0
40
50
60
70
80
90
0.5 1.0 1.5 2.0 2.5 3.0
= 10V
V 18V
IN =
7V
=
0
0
6
5
4
3
2
1
246810
I 0A
=
o
1A
2A
3A
=
=
=
0
6
5
4
3
2
1
0 1.0 2.0 3.0 4.0 5.0
T 100, 25, 20ºC
C=--
+
0
0
6
5
4
3
2
1
1.0 2.0 3.0 4.0 5.0
V 18V
=
IN
10V
7V
=
=
–40 0 40 80 120 160
10
0
5
15
20
25
23
Output current IO (A)
■ Line Regulation
Output voltage VO (V)
Output voltage VO (V)
Output voltage VO (V)
Output voltage VO (V)
Input voltage VIN (V) Input voltage VIN (V)
■ Load Regulation ■ Rise Characteristics
■ Overcurrent Protection Characteristics
Output current IO (A)
Output voltage VO (V)
■
Overcurrent Protection Temperature Characteristics
■ Efficiency Curve
Output current IO (A)
Output current IO (A)
Operating temperature Ta (ºC)
Power Dissipation PD (W)
■ Ta—PD Characteristics
With silicone grease
Heatsink: aluminum
With infinite heatsink
Efficiency (%)
Electrical Characteristics
Switching Type Regulator ICs SI-3201S
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
(Ta=25ºC)
Power supply voltage
Input terminal voltage
DIAG output applied voltage
Voltage across power supply
and drive terminal
Power dissipation
Input current
Operating power supply voltage
Quiescent circuit current
Open load detection resistor
Output transfer time
DIAG output transfer time
(VBopr =14V, Ta=25ºC unless otherwise specified)
Junction temperature
Operating temperature
Storage temperature
VB
VIN
VDIAG
VBopr
L
o output
VIN = 5 V
VIN = 0 V
VO = V Bopr –1.9V
IO = 1 A
IO = 1 A
IO = 1 A
IO = 1 A
V
5 12
6.0
0.8
0
16
mA
1.0
100
mA
30
8 30
15
10
15
30
30
30
µA
kΩ
µs
µs
µs
µs
Iq
Threshold input voltage 3.0 VVINth
IIN
IIN
Overcurrent protection starting
current
1.6
1
AIS
Ropen
Leak current of DIAG output VDIAG = 5 V100 µAIDGH
Saturation voltage of DIAG output
IDIAG = 3 m A0.3 VVDL
Saturation voltage of output
transistor IO 1.0A, VBopr = 6 to 16V0.5 VVCE (sat)
Output terminal sink current VO = 0V, VIN = 0 V2.0 mAIO (off)
TON
TOFF
TPLH
TPHL
VB–D
PD
Tj
TOP
Tstg
Hi output
Lo output
V
V
Without heatsink, all circuits operating
V
V
W
ºC
ºC
ºC
–13 to +40
–0.3 to +7.0
Drive terminal applied voltage
VDV–0.3 to VB
–0.3 to +7.0
DIAG output source current IDIAG mA 3
VB –0.4
Output current IOA1.5
2.6
–40 to +150
–40 to +100
–40 to +150
Note: * The rule of protection against reverse connection of power supply is VB = –13V, one minute
(all terminals except, VB and GND, are open).
Equivalent Circuit Diagram
Standard Circuit Diagram
Diagnostic Function
External Dimensions (unit: mm)
Features
● Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
● Low saturation PNP transistor use
● Allows direct driving using LS-TTL and C-MOS logic levels
● Built-in overcurrent protection circuits
● Built-in protection against reverse connection of power supply
● Tj = 150ºC guaranteed
● Surface-mount full-mold package
VIN VO
HH
LL
Truth table
SDH04
PZ
D1
DIAG
5.1kΩ
GND
IN
Out
VCC
VB
Load
Note 1: A pull-down resistor (11 kΩ typ.) is connected to the IN terminal.
VOUT turns "L" when a high impedance is connected to the IN terminal in
series.
GND
GND
GND
GND
VB
VIN
VOUT
IO
VDIAG
Normal Shorted load Open load Overvoltage Overheat
ERROR SIGNAL for CPU
TSD
OVER
VOLTAGE
OPENOPEN
SHORT
Is
3.0V
0.8V
DIAG DET.
DIAG DET.
GND
4,5,13
Drive
Drive
O.C.P
O.C.P
T.S.D
CONT.
11kΩ typ.
CONT.
11kΩ typ.
Pre. Reg.
IN2
DIAG2
7
6
IN1 2
3
DIAG1
The MIC is bound by the dotted lines. 9,12,16
VB
Out1
1,15
D1
14
8,10
11
Out2
D2
[Abbreviations]
Drive: Drive circuit
CONT: ON/OFF circuit
Pre.Reg: Pre-regulator
DIAG.DET.: Diagnostic circuit
O.C.P.: Overcurrent protection
T.S.D.: Thermal protection
High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits]
SDH04
24
a: Part No.
b: Lot No.
a
b
20.0max
2.54
0.89
8.0
6.3
0 to 0.15
3.0
0.25
9.8
1.0
19.56
6.8max
0.75 +0.15
–0.05
+0.15
–0.05
0.3
16
Pin 1 8
9
4.0max
3.6
1.4
SMD-16A
*1. The base terminal (D terminal) is connected to the output
transistor base. It is also connected to the control monolithic
IC. Do not, therefore, apply an external voltage in operation.
*2. SDH04 have two or three terminals of the same function (VB,
Out1, Out2, GND). The terminals of the same function must be
shorted at a pattern near the product.
*2
*2
*1
*2
*2
*1
±0.2
±0.25
±0.15
±0.2
±0.2
±0.2
±0.2 ±0.3
±0.3
±0.5
0102030
0
Iq (mA)
VB (V)
10
20
4640
VIN = 0V
VIN = 5V
0102030
0
20
50
40
IB (mA)
VB (V)
30
10
4640
–40ºC
25ºC
125ºC
Ta =
VIN = 0V
VIN = 5V
0102030
0
40
100
80
IB (mA)
VB (V)
60
20
4640
012
0
0.5
1.5
VCE (sat) (V)
IO (A)
1.0
3
125ºC
25ºC
Ta =
–40ºC
–40ºC
25ºC
Ta=
125ºC
VB= 16V
VB= 6V
012
0
15
VO (V)
IO (A)
10
5
20
43
012
0
15
VO (V)
VIN (V)
10
5
3
VB = 14V IO = 1A
–40ºC
25ºC
14V
6V
VB =
18V
012
0
15
VO (V)
IO (A)
10
5
20
43
14V
6V
VB =
18V
012
0
15
VO (V)
IO (A)
10
5
20
43
14V
6V
VB=
18V
Ta = 125ºC
02468
0
1.0
0.8
0.6
0.4
0.2
IIN (mA)
VIN (V)
10
–50 0 50 100
0
1.0
0.5
IINL (µA)
Ta (ºC)
150
VB = 14V
VB = 14V VIN= 0 V
–40ºC
25ºC
Ta = 125ºC
VO shorted
VO open
VIN = 0V
Ta = – 40ºC
25ºC
125ºC
25
–50 0 50 100
0
0.2
VDL (V)
Ta (ºC)
0.1
0.3
150
VB = 14V
IDIAG = 3mA
■ Quiescent Circuit Current (dual circuit) ■ Circuit Current (single circuit) ■ Circuit Current (dual circuit)
■ Overcurrent Protection Characteristics (Ta=–40ºC) ■ Overcurrent Protection Characteristics (Ta=25ºC)
■ Input Terminal Source Current
■ Threshold Characteristics of Input Voltage
■ Overcurrent Protection Characteristics (Ta=125ºC)
■ Saturation Voltage of Output Transistor
■ Saturation Voltage of DIAG Output
■ Input Terminal Sink Current
Electrical Characteristics
High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits]
SDH04
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
(Ta= 25ºC)
Power supply voltage
Input terminal voltage
DIAG terminal voltage
Collector-emitter voltage
Power Dissipation
Input voltage
Input current
Operating power supply voltage
Quiescent circuit current
Thermal protection starting
temperature
Minimum load inductance
Open load detection resistor
Output transfer time
DIAG output voltage
DIAG output transfer time
(Ta=25ºC unless otherwise specified)
Saturation voltage of output
transistor
Junction temperature
Operating temperature
Storage temperature
VB
VIN
VDIAG
VBopr
VBopr = 14V, VIN = 0 V
IO 1.0A, VBopr = 6 to 16V
IO 1.8A, VBopr = 6 to 16V
VBopr = 6 to 16V
VBopr = 6 to 16V
VIN = 5 V
VIN = 0 V
VBopr
=
14V, VO
=
VBopr –1.5V
VBopr = 6 to 16V
VBopr = 14V, IO = 1 A
VBopr = 14V, IO = 1 A
VCC = 6 V
VCC = 6V, IDD = 2 m A
VBopr = 14V, IO = 1 A
VBopr = 14V, IO = 1 A
V
5 12
6.0 30
mA
0.5 V
1.0 V
VBV
0.8 V
1mA
145
30
8 30
15 30
6
0.3
30
30
mA
125 ºC
kΩ
µs
µs
V
V
µs
µs
Iq
Output leak current VCEO = 16V
2.0
–0.3
–0.1
2mAIO, leak
VCE (sat)
VIH
VIL
IIH
IIL
TTSD
Overcurrent protection starting
current
1.9 AIS
Ropen
TON
TOFF
4.5
1
VDH
VDL
TPLH
TPHL
mHL
VCE
PD1
PD2
Tj
TOP
Tstg
Output ON
Output OFF
Output ON
Output OFF
V
V
With infinite heatsink (Tc = 25ºC)
Stand-alone without heatsink
(Tc = 25ºC)
V
V
W
W
ºC
ºC
ºC
40
–0.3 to VB
6
40
Output current IOA1.8
18
1.5
–40 to +125
–40 to +100
–40 to +125 Standard Circuit Diagram
Diagnostic Function
External Dimensions (unit: mm)
Features
● Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
● Low saturation PNP transistor use
● Allows direct driving using LS-TTL and C-MOS logic levels
● Built-in overcurrent and thermal protection circuits
● Built-in protection against reverse connection of power supply
● TO220 equivalent full-mold package not require insulation mica
SI-5151S
PZ
DIAG
5.1kΩ
GND
1
4
3
5
2
VIN
VIN VO
HH
LL
VO
VCC
VB
Load
LS-TTL
or
CMOS
VIN
VO
DIAG
Normal NormalOpen load OverheatShorted load
Truth table
1. GND
2. VIN
3. VO
4. DIAG
5. VB
a: Part No.
b: Lot No.
(Forming No. 1123)
VIN DIAG
Open load
Normal
Mode
Shorted load
Overheat
L
H
VO
L
H
L
H
L
H
H
H
H
H
L
H
L
L
L
L
L
H
L
L
L
L
● DIAG output will be undetermined when a voltage
exceeding 25V is applied to VB terminal.
Note:
* The rule of protection against reverse connection of power supply is VB = –13V, one minute
(all terminals except, VB and GND, are open).
26
High-side Power Switch ICs [With Diagnostic Function] SI-5151S
10
2.6
4.2
2.8
3.2
4
7.9
20 max
3.6
16.9
P1.7 • 4 = 6.8
0.94
4
0.85 0.45+0.2
–0.1
+0.2
–0.1
2.9
R-end
±0.5
±0.6
±0.1
±0.2
±0.2
±0.2
±0.2
±0.15
±0.1
±0.2
±0.3
±0.2
+0.2
–0.3
a
b
0
0
10
5
10 20 30 40
--40ºC
95ºC 25ºC
Iq (mA)
VB (V) VB (V)
0
0
10
10 20 30 40
20
30
T --40ºC
=
T 25ºC
=
T 95ºC
=
40
50
IB (mA)
0
0
123
0.5
1.0
95ºC
V =
6 to 16V
B
--40ºC
25ºC
VCE (sat) (V)
IO (A)
0
0123
16
10
14V
V =
B
2
4
6
8
12
14
VO (V)
IO (A)
0
0123
16
10
8
14V
V =
B
12
14
4
2
6
IO (A)
VO (V)
0
0123
16
10
2
14V
V =
B
14
12
4
6
8
VO (V)
IO (A)
0
0
12
10
20
15
5
2.2
95ºC
Ta =
25ºC –40ºC
16V
=
B
V
1A
=
O
I
VIN (V)
VO (V)
–40
0
050
0.5
1.0
100
Ta (ºC)
IIH (mA)
14V
=
B
V
5V
=
IN
V
–40 0 50 100
Ta (ºC)
0
0.2
0.1
14V
=
B
V
VDG (sat) (V)
–40
0
050100
Ta (ºC)
IIL (µA)
14V
=
B
V
0V
=
IN
V
1
2
050100
Ta (ºC)
0
150
10
16
2
4
6
8
12
14
2
4
6
DIAG (V)
1
3
5
VO (V)
Vo
DIAG
14V
=
B
V
10mA
=
O
I
a
a
a
27
■ Quiescent Circuit Current ■ Circuit Current ■ Saturation Voltage of Output Transistor
■
Overcurrent Protection Characteristics (Ta=25ºC)
■
Overcurrent Protection Characteristics (Ta=100ºC)
■ Input Current (Output OFF)
■ Input Current (Output ON)
■ Threshold input voltage
■
Overcurrent Protection Characteristics (Ta= –40ºC)
■ Saturation Voltage of DIAG Output ■ Thermal Protection Characteristics
Electrical Characteristics
High-side Power Switch ICs [With Diagnostic Function] SI-5151S
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
(Ta = 25ºC)
Power supply voltage
Input terminal voltage
DIAG terminal voltage
Collector-emitter voltage
Power Dissipation
Input voltage
Input current
Operating power supply voltage
Quiescent circuit current
Thermal protection starting
temperature
Open load detection resistor
Output transfer time
DIAG output leak current
Saturation voltage of DIAG output
DIAG output transfer time
(Ta=25ºC unless otherwise specified)
Saturation voltage of output
transistor
Junction temperature
Operating temperature
Storage temperature
VB
VIN
VDIAG
VBopr
VBopr = 14V, VIN = 0 V
IO 1.0A, VBopr = 6 to 16V
IO 1.8A, VBopr = 6 to 16V
VBopr = 6 to 16V
VBopr = 6 to 16V
VIN = 5 V
VIN = 0 V
V
Bopr =
14V, V
O =
V
Bopr
–1.5V
VBopr = 6 to 16V
VBopr 6V
VBopr = 14V, IO = 1 A
VBopr = 14V, IO = 1 A
VCC = 6V, VBopr = 6 to 16V
V
CC
= 6V, V
Bopr
= 6 to 16V, I
DO
= 2mA
VBopr = 14V, IO = 1 A
VBopr = 14V, IO = 1 A
V
5 12
6.0 30
mA
0.5 V
1.0 V
VBV
0.8 V
1mA
30
8 30
15 30
100
0.3
30
30
mA
150 ºC
kΩ
µs
µs
µA
V
µs
µs
Iq
Output leak current VCEO = 16V, VIN = 0 V
2.0
–0.3
–0.1
2mAIO, leak
VCE (sat)
VIH
VIL
IIH
IIL
TTSD
Overcurrent protection starting
current
1.9 AIS
Ropen
TON
TOFF
IDIAG
VDL
Minimum load inductance mHL1
TPLH
TPHL
VCE
PD1
PD2
Tj
TOP
Tstg
Output ON
Output OFF
Output ON
Output OFF
V
V
With infinite heatsink (Tc=25ºC)
Stand-alone without heatsink
V
V
W
W
ºC
ºC
ºC
40
–0.3 to VB
6
40
Output current IOA1.8
22
1.8
–40 to +150
–40 to +100
–40 to +150
Note:
* The rule of protection against reverse connection of power supply is VB = –13V, one minute
(all terminals except, VB and GND, are open).
Standard Circuit Diagram
Diagnostic Function
External Dimensions (unit: mm)
Features
● Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
● Low saturation PNP transistor use
● Allows direct driving using LS-TTL and C-MOS logic levels
● Built-in overcurrent and thermal protection circuits
● Built-in protection against reverse connection of power supply
● Tj = 150ºC guaranteed
● TO220 equivalent full-mold package not require insulation mica
SI-5152S
PZ
DIAG
5.1kΩ
GND
1
4
3
5
2
VIN
VIN VO
HH
LL
VO
VCC
VIN DIAG
VB
Load
LS-TTL
or
CMOS
VIN
VO
DIAG
Normal NormalOpen load OverheatShorted load
Truth table
Open load
Normal
Mode
Shorted load
Overheat
L
H
VO
L
H
L
H
L
H
H
H
H
H
L
H
L
L
L
L
L
H
L
L
L
L
● DIAG output will be undetermined when a voltage
exceeding 25V is applied to VB terminal.
28
High-side Power Switch ICs [With Diagnostic Function] SI-5152S
1. GND
2. VIN
3. VO
4. DIAG
5. VB
a: Part No.
b: Lot No.
(Forming No. 1123)
10
2.6
4.2
2.8
3.2
4
7.9
20 max
3.6
16.9
P1.7 • 4 = 6.8
0.94
4
0.85 0.45+0.2
–0.1
+0.2
–0.1
2.9
R-end
±0.5
±0.6
±0.1
±0.2
±0.2
±0.2
±0.2
±0.15
±0.1
±0.2
±0.3
±0.2
+0.2
–0.3
a
b
0
0
10
5
10 20 30 40
–40ºC
95ºC 25ºC
Iq (mA)
VB (V) VB (V)
0
0
10
10 20 30 40
20
30
Ta = – 40ºC
40
50
IB (mA)
0
0
123
0.5
1.0
95ºC
VB =
6 to 16V
–40ºC
25ºC
VCE (sat) (V)
IO (A)
0
0123
16
10
14V
V =
B
2
4
6
8
12
14
VO (V)
IO (A)
0
0123
16
10
8
14V
V =
B
12
14
4
2
6
IO (A)
VO (V)
0
0123
16
10
2
14V
V =
B
14
12
4
6
8
VO (V)
IO (A)
0
0
12
10
20
15
5
2.2
95ºC
Ta =
25ºC –40ºC
VB = 16V
IO = 1A
VIN (V)
VO (V)
–40
0
050
0.5
1.0
100
Ta (ºC)
IIH (mA)
14V
=
B
V
5V
=
IN
V
–40 0 50 100
Ta (ºC)
0
0.2
0.1
14V
=
B
V
VDL (V)
–40
0
050100
Ta (ºC)
IIL (µA)
14V
=
B
V
0V
=
IN
V
1
2
Ta = 25ºC
Ta = 95ºC
29
■ Quiescent Circuit Current ■ Circuit Current ■ Saturation Voltage of Output Transistor
■ Overcurrent Protection Characteristics (Ta=25ºC) ■ Overcurrent Protection Characteristics (Ta=100ºC)
■ Input Current (Output OFF)
■ Input Current (Output ON)
■ Threshold input voltage
■ Overcurrent Protection Characteristics (Ta = –40ºC)
■ Saturation Voltage of DIAG Output
Electrical Characteristics
High-side Power Switch ICs [With Diagnostic Function] SI-5152S
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
(Ta=25ºC)
Power supply voltage
Input terminal voltage
DIAG terminal voltage
Collector-emitter voltage
Power Dissipation
Input voltage
Input current
Operating power supply voltage
Quiescent circuit current
Thermal protection starting
temperature
Open load detection resistor
Output transfer time
DIAG output voltage
DIAG output transfer time
(Ta=25ºC unless otherwise specified)
Saturation voltage of output
transistor
Junction temperature
Operating temperature
Storage temperature
VB
VIN
VDIAG
VBopr
VBopr = 14V, VIN = 0 V
IO 2.05A, VBopr = 6 to 16V
VBopr = 6 to 16V
VBopr = 6 to 16V
VIN = 5 V
VIN = 0 V
V
Bopr =
14V, V
O =
V
Bopr –
1.5V
VBopr = 6 to 16V
VBopr 6V
VBopr = 14V, IO = 1 A
VBopr = 14V, IO = 1 A
VCC = 6V, VBopr = 6 to 16V
V
CC
= 6V, V
Bopr
= 6 to 16V, I
DO
= 2mA
VBopr = 14V, IO = 1 A
VBopr = 14V, IO = 1 A
IC = 5 m A
V
5 12
6.0 30
mA
0.47 V
VBV
0.8 V
1mA
30
8 30
15 30
6
0.3
30
30
403428
1
mA
150
4.5
ºC
kΩ
µs
µs
V
V
µs
µs
Iq
Output leak current VCEO = 16V, VIN = 0 V
2.0
–0.3
–0.1
2mAIO, leak
VCE (sat)
VIH
VIL
IIH
IIL
TTSD
Overcurrent protection starting
current
2.05 AIS
Ropen
TON
TOFF
VDH
VDL
Minimum load inductance mHL
Surge clamp voltage VVZ
TPLH
TPHL
VCE
PD1
PD2
Tj
TOP
Tstg
Output ON
Output OFF
Output ON
Output OFF
V
V
With infinite heatsink (Tc=25ºC)
Stand-alone without heatsink
Refer to "Surge clamp voltage"
in Electrical Characteristics
V
V
W
W
ºC
ºC
ºC
–13 to +40
–0.3 to VB
6
VB —VZ
Output current IOA2.04
22
1.8
–40 to +150
–40 to +100
–40 to +150
Note:
*1. The Zener diode for surge clamping has an energy capability of 140 mJ (single pulse).
* The rule of protection against reverse connection of power supply is VB = –13V, one minute.
* This driver is exclusively used for ON/OFF control.
Standard Circuit Diagram
Diagnostic Function
External Dimensions (unit: mm)
Features
● Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
● Low saturation PNP transistor use
● Allows direct driving using LS-TTL and C-MOS logic levels
● Built-in overcurrent and thermal protection circuits
● Built-in protection against reverse connection of power supply
● Tj = 150ºC guaranteed
● Built-in Zener diode
● TO220 equivalent full-mold package not require insulation mica
SI-5153S
DIAG
5.1kΩ
GND
1
4
3
5
2
VIN
VIN VO
HH
LL
VO
VCC
VIN DIAG
VB
Load
LS-TTL
or
CMOS
VIN
VO
DIAG
Normal NormalOpen load OverheatShorted load
Truth table
Open load
Normal
Mode
Shorted load
Overheat
L
H
VO
L
H
L
H
L
H
H
H
H
H
L
H
L
L
L
L
L
H
L
L
L
L
● DIAG output will be undetermined when a voltage
exceeding 25V is applied to VB terminal.
30
High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode]
SI-5153S
*1
1. GND
2. VIN
3. VO
4. DIAG
5. VB
a: Part No.
b: Lot No.
(Forming No. 1123)
10
2.6
4.2
2.8
3.2
4
7.9
20 max
3.6
16.9
P1.7 • 4 = 6.8
0.94
4
0.85 0.45+0.2
–0.1
+0.2
–0.1
2.9
R-end
±0.5
±0.6
±0.1
±0.2
±0.2
±0.2
±0.2
±0.15
±0.1
±0.2
±0.3
±0.2
+0.2
–0.3
a
b
0102030
0
Iq (mA)
VB (V)
5
10
40
25ºC
150ºC
Ta = –40ºC
0102030
0
20
50
40
IB (mA)
VB (V)
30
10
40
–40ºC
25ºC
150ºC
Ta =
012
0
2
VCE (sat) (V)
IO (A)
1
3
–40ºC
25ºC
VB = 6 to 16V
Ta =
125ºC
012
0
15
VO (V)
IO (A)
10
5
20
543
01 2
0
15
VO (V)
IO (A)
10
5
20
453012
0
15
VO (V)
IO (A)
10
5
20
453
14V
8V
VB =
18V
14V
8V
18V
14V
8V
VB =
18V
012
0
20
VO (V)
VIN (th) (V)
15
10
5
Ta = 150ºC –40ºC
25ºC
–50 0 50 100
0
0.8
0.6
1.0
0.4
0.2
IIH (mA)
Ta (ºC)
150 –50 0 50 100
0
5
4
3
2
1
IIL (µA)
Ta (ºC)
150
–50 0 50 100
0
2
1
IO leak (mA)
Ta (ºC)
150 –50 0 50 100
0
0.5
0.4
0.3
0.2
0.1
VDL (V)
Ta (ºC)
150 050100
0
20
15
10
5
VO (V)
Ta (ºC)
200150
VO
VDIAG
VB = 16V
IO = 1 A
VB = 14V
VIN = 5 V
VB = 14V
VIN = 0 V
VB = 14V
VDIAG = 5 V
IO = 10mA
VB = 14V
IDIAG = 2mA
VB = 14V
31
■ Quiescent Circuit Current ■ Circuit Current ■ Saturation Voltage of Output Transistor
■ Overcurrent Protection Characteristics (Ta =25ºC) ■ Overcurrent Protection Characteristics (Ta =125ºC)
■ Input Current (Output OFF)
■ Input Current (Output ON)
■ Threshold Characteristics of Input Voltage
■ Overcurrent Protection Characteristics (Ta= –40ºC)
■ Saturation Voltage of DIAG Output ■ Thermal Protection Characteristics
■ Output Terminal Leak Current
Electrical Characteristics
High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode]
SI-5153S
VB =
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
(Ta=25ºC)
Power supply voltage
Input terminal voltage
DIAG terminal voltage
Collector-emitter voltage
Power Dissipation
Input voltage
Input current
Operating power supply voltage
Quiescent circuit current
Thermal protection starting
temperature
Open load detection resistor
Output transfer time
DIAG output voltage
DIAG output transfer time
(Ta=25ºC unless otherwise specified)
Saturation voltage of output
transistor
Junction temperature
Operating temperature
Storage temperature
VB
VIN
VDIAG
VBopr
VBopr = 14V, VIN = 0 V
IO 1.0A, VBopr = 6 to 16V
VBopr = 6 to 16V
VBopr = 6 to 16V
VIN = 5 V
VIN = 0 V
V
Bopr =
14V, V
O =
V
Bopr
–1.5V
VBopr = 6 to 16V
VBopr 6V
VBopr = 14V, IO = 1 A
VBopr = 14V, IO = 1 A
VCC = 6V, VBopr = 6 to 16V
V
CC
= 6V, V
Bopr
= 6 to 16V, I
DO
= 2mA
VBopr = 14V, IO = 1 A
VBopr = 14V, IO = 1 A
IC = 5 m A
V
5 12
6.0 30
mA
0.3 V
IO 2.5A, VBopr = 6 to 16V0.72 V
VBV
0.8 V
1mA
30
8 30
15 30
6
0.3
30
30
403428
1
mA
150
4.5
ºC
kΩ
µs
µs
V
V
µs
µs
Iq
Output leak current VCEO = 16V, VIN = 0 V
2.0
–0.3
–0.1
2mAIO, leak
VCE (sat)
VIH
VIL
IIH
IIL
TTSD
Overcurrent protection starting
current
2.6 AIS
Ropen
TON
TOFF
VDH
VDL
Minimum load inductance mHL
Surge clamp voltage VVZ
TPLH
TPHL
VCE
PD1
PD2
Tj
TOP
Tstg
Output ON
Output OFF
Output ON
Output OFF
V
V
With infinite heatsink (Tc=25ºC)
Stand-alone without heatsink
Refer to "Surge clamp voltage" in
Electrical Characteristics
V
V
W
W
ºC
ºC
ºC
–13 to +40
–0.3 to VB
6
VB –VZ
Output current IOA2.5
22
1.8
–40 to +150
–40 to +100
–40 to +150
Note:
*1. The Zener diode for surge clamping has an energy capability of 200 mJ (single pulse).
* The rule of protection against reverse connection of power supply is VB = –13V, one minute.
* This driver is exclusively used for ON/OFF control.
Standard Circuit Diagram
Diagnostic Function
External Dimensions (unit: mm)
Features
● Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
● Low saturation PNP transistor use
● Allows direct driving using LS-TTL and C-MOS logic levels
● Built-in overcurrent and thermal protection circuits
● Built-in protection against reverse connection of power supply
● Tj = 150ºC guaranteed
● Built-in Zener diode
● TO220 equivalent full-mold package not require insulation mica
VIN DIAG
VIN
VO
DIAG
Normal NormalOpen load OverheatShorted load
Open load
Normal
Mode
Shorted load
Overheat
L
H
VO
L
H
L
H
L
H
H
H
H
H
L
H
L
L
L
L
L
H
L
L
L
L
● DIAG output will be undetermined when a voltage
exceeding 25V is applied to VB terminal.
SI-5154S
DIAG
5.1kΩ
GND
1
4
3
5
2
VIN
VIN VO
HH
LL
VO
VCC
VB
Load
LS-TTL
or
CMOS
Truth table
32
High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode]
SI-5154S
*1
1. GND
2. VIN
3. VO
4. DIAG
5. VB
a: Part No.
b: Lot No.
(Forming No. 1123)
10
2.6
4.2
2.8
3.2
4
7.9
20 max
3.6
16.9
P1.7 • 4 = 6.8
0.94
4
0.85 0.45+0.2
–0.1
+0.2
–0.1
2.9
R-end
±0.5
±0.6
±0.1
±0.2
±0.2
±0.2
±0.2
±0.15
±0.1
±0.2
±0.3
±0.2
+0.2
–0.3
a
b
0102030
0
Iq (mA)
VB (V)
5
10
40
25ºC
150ºC
Ta= –40ºC
0102030
0
20
50
40
IB (mA)
VB (V)
30
10
40
–40ºC
25ºC
150ºC
Ta =
012
0
2
VCE (sat) (V)
IO (A)
1
3
25ºC
VB = 6 to 16V
Ta =
125ºC
012
0
16
VO (V)
IO (A)
12
8
4
20
0
16
12
8
4
20
0
16
12
8
4
20
543
012
VO (V)
IO (A)
543 012
VO (V)
IO (A)
543
14V
8V
14V
8V
14V
8V
6V
012
0
20
VO (V)
VIN (th) (V)
15
10
5
Ta = 125ºC –40ºC
25ºC
–50 0 50 100
0
0.8
0.6
1.0
0.4
0.2
IIH (mA)
Ta (ºC)
150 –50 0 50 100
0
5
4
3
2
1
IIL (µA)
Ta (ºC)
150
–50 0 50 100
0
2
1
IO leak (mA)
Ta (ºC)
150 –50 0 50 100
0
0.5
0.4
0.3
0.2
0.1
VDL (V)
Ta (ºC)
150
–40ºC
VB =
18V
VB =
18V
6V 6V
VB =
18V
VB = 14V
VIN = 0 V
VB = 14V
VIN = 5 V
VB = 16V
IO = 1 A
VB = 14V VB = 14V
IDIAG = 2 m A
33
050100
0
20
15
10
5
VO (V)
Ta (ºC)
200150
VO
VDIAG
VB = 14V
VDIAG = 5 V
IO = 10mA
■ Quiescent Circuit Current ■ Circuit Current ■ Saturation Voltage of Output Transistor
■ Overcurrent Protection Characteristics (Ta=25ºC) ■ Overcurrent Protection Characteristics (Ta=125ºC)
■ Input Current (Output OFF)
■ Input Current (Output ON)
■ Threshold input voltage
■ Overcurrent Protection Characteristics (Ta= –40ºC)
■ Saturation Voltage of DIAG Output ■ Thermal Protection Characteristics
■ Output Terminal Leak Current
Electrical Characteristics
High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode]
SI-5154S
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
(Ta=25ºC)
Power supply voltage
Input terminal voltage
DIAG terminal voltage
Collector-emitter voltage
Power dissipation
Input voltage
Input current
Operating power supply voltage
Quiescent circuit current
Thermal protection starting
temperature
Open load detection resistor
Output transfer time
DIAG output voltage
DIAG output transfer time
(Ta=25ºC unless otherwise specified)
Saturation voltage of output
transistor
Junction temperature
Operating temperature
Storage temperature
VB
VIN
VDIAG
VBopr
VBopr = 14V, VIN = 0 V
IO 1.0A, VBopr = 6 to 16V
IO 2.5A, VBopr = 6 to 16V
VBopr = 6 to 16V
VBopr = 6 to 16V
VIN = 5 V
VIN = 0 V
V
Bopr =
14V, V
O =
V
Bopr –
1.5V
VBopr = 6 to 16V
VBopr 6V
VBopr = 14V, IO = 1 A
VBopr = 14V, IO = 1 A
VCC = 6V, VBopr = 6 to 16V
V
CC
= 6V, V
Bopr
= 6 to 16V, I
DO
= 2mA
VBopr = 14V, IO = 1 A
VBopr = 14V, IO = 1 A
V
512
6.0 30
mA
0.3 V
0.72 V
VBV
0.8 V
1mA
30
8 30
15 30
6
0.3
30
30
mA
4.5
1
ºC
kΩ
µs
µs
V
V
µs
µs
Iq
Output leak current VCEO = 16V, VIN = 0 V
2.0
–0.3
–0.1
2mAIO, leak
VCE (sat)
VIH
VIL
IIH
IIL
TTSD
Overcurrent protection starting
current
2.6
150
AIS
Ropen
TON
TOFF
VDH
VDL
Minimum load inductance mHL
TPLH
TPHL
VCE
PD1
PD2
Tj
TOP
Tstg
Output ON
Output OFF
Output ON
Output OFF
V
V
With infinite heatsink (Tc=25ºC)
Stand-alone without heatsink
V
V
W
W
ºC
ºC
ºC
–13 to +40
–0.3 to VB
6
40
Output current IOA2.5
22
1.8
–40 to +150
–40 to +100
–40 to +150
Note:
* The rule of protection against reverse connection of power supply is VB= –13V, one minute
(all terminals except, VB and GND, are open).
Standard Circuit Diagram
Diagnostic Function
External Dimensions (unit: mm)
Features
● Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
● Low saturation PNP transistor use
● Allows direct driving using LS-TTL and C-MOS logic levels
● Built-in overcurrent and thermal protection circuits
● Built-in protection against reverse connection of power supply
● Tj = 150ºC guaranteed
● TO220 equivalent full-mold package not require insulation mica
VIN DIAG
VIN
VO
DIAG
Normal NormalOpen load OverheatShorted load
Open load
Normal
Mode
Shorted load
Overheat
L
H
VO
L
H
L
H
L
H
H
H
H
H
L
H
L
L
L
L
L
H
L
L
L
L
● DIAG output will be undetermined when a voltage
exceeding 25V is applied to VB terminal.
SI-5155S
PZ
DIAG
5.1kΩ
GND
1
4
3
5
2
VIN
VIN VO
HH
LL
VO
VCC
VB
Load
LS-TTL
or
CMOS
Truth table
High-side Power Switch ICs [With Diagnostic Function] SI-5155S
34
1. GND
2. VIN
3. VO
4. DIAG
5. VB
a: Part No.
b: Lot No.
(Forming No. 1123)
10
2.6
4.2
2.8
3.2
4
7.9
20 max
3.6
16.9
P1.7 • 4 = 6.8
0.94
4
0.85 0.45+0.2
–0.1
+0.2
–0.1
2.9
R-end
±0.5
±0.6
±0.1
±0.2
±0.2
±0.2
±0.2
±0.15
±0.1
±0.2
±0.3
±0.2
+0.2
–0.3
a
b
0102030
0
Iq (mA)
VB (V)
5
10
40
25ºC
150ºC
Ta= –40ºC
0102030
0
20
50
40
IB (mA)
VB (V)
30
10
40
–40ºC
25ºC
150ºC
Ta =
012
0
2
VCE (sat) (V)
IO (A)
1
3
25ºC
VB = 6 to 16V
Ta =
125ºC
012
0
16
VO (V)
IO (A)
12
8
4
20
0
16
12
8
4
20
0
16
12
8
4
20
543
012
VO (V)
IO (A)
543 012
VO (V)
IO (A)
543
14V
8V
14V
8V
14V
8V
6V
012
0
20
VO (V)
VIN (th) (V)
15
10
5
Ta = 125ºC –40ºC
25ºC
–50 0 50 100
0
0.8
0.6
1.0
0.4
0.2
IIH (mA)
Ta (ºC)
150 –50 0 50 100
0
5
4
3
2
1
IIL (µA)
Ta (ºC)
150
–50 0 50 100
0
2
1
IO leak (mA)
Ta (ºC)
150 –50 0 50 100
0
0.5
0.4
0.3
0.2
0.1
VDL (V)
Ta (ºC)
150
–40ºC
VB =
18V
VB =
18V
6V 6V
VB =
18V
VB = 14V
VIN = 0 V
VB = 14V
VIN = 5 V
VB = 16V
IO = 1 A
VB = 14V VB = 14V
IDIAG = 2 m A
35
050100
0
20
15
10
5
VO (V)
Ta (ºC)
200150
VO
VDIAG
VB = 14V
VDIAG = 5 V
IO = 10mA
■ Quiescent Circuit Current ■ Circuit Current ■ Saturation Voltage of Output Transistor
■ Overcurrent Protection Characteristics (Ta=25ºC) ■ Overcurrent Protection Characteristics (Ta = 125ºC)
■ Input Current (Output OFF)
■ Input Current (Output ON)
■ Threshold input voltage
■ Overcurrent Protection Characteristics (Ta= –40ºC)
■ Saturation Voltage of DIAG Output ■ Thermal Protection Characteristics
■ Output Terminal Leak Current
Electrical Characteristics
High-side Power Switch ICs [With Diagnostic Function] SI-5155S
Parameter Symbol Unit ConditionsRatings
Electrical Characteristics
Absolute Maximum Ratings
Parameter Symbol min typ max Unit Conditions
Ratings
(Ta=25ºC)
Power supply voltage
Input terminal voltage
DIAG output applied voltage
Voltage across power supply
and output terminal
Power Dissipation
Input voltage
Operating power supply voltage
Quiescent circuit current (per circuit)
Thermal protection starting
temperature
Open load detection resistor
Output transfer time
DIAG output transfer time
(V
Bopr
=14V, Tj= –40 to +150
ºC
unless otherwise specified)
Junction temperature
Operating temperature
Storage temperature
VB
VIN
VDIAG
VBopr
Lo output
Tj = 25ºC
VO = V Bopr –1.5V
VBopr 6V
IO = 1 A
IO = 1 A
IO = 1 A
IO = 1 A
V
0.8
19.3
1.0
2.5
34
34
1.6
6.0 16
mA
1.5
V
30
100
30
100
60
V
ºC
kΩ
µs
µs
µs
µs
Iq
Circuit current (per circuit) mAIB
0.8
3.7
Threshold input voltage 3.0 VVINth
VIN
VIN
TTSD
Overcurrent protection starting
current
1.6
5.5
Minimum load inductance mHLo 1.0
Maximum ON duty %D(ON) 0
AIS
Ropen
Leak current of DIAG output VCC = 7 V–100 µAIDGH
Saturation voltage of DIAG output
I
DGH
= – 2 mA, V
Bopr
= 6 to 16V0.4 V
VDL
Saturation voltage of output
transistor
IO 1.2A, VBopr = 6 to 16V0.2 VVCE (sat)
IO 1.5A, VBopr = 6 to 16V
VVCE (sat)
Output terminal sink current Tj = 25ºC, VCEO = 14V 5 mAIO (off)
Surge clamp voltage
Tj = 25ºC, IC = 10mA39 V
VB–O
IC = 5 m A40 V
TON
TOFF
TPLH
TPHL
VB–O
PD
Tj
TOP
Tstg
Hi output
Lo output
Input current
VIN = 5 V
VIN = 0 V
100
29
28
–1.0 mA
µA
IIN
IIN
Hi output
Lo output
V
V
Stand-alone without heatsink,
all circuits operating
C = 200pF, R = 0 Ω
V
V
W
ºC
ºC
ºC
–13 to +40
–0.3 to +7.0
Drive terminal applied voltage
VDV–0.3 to VB
–0.3 to +7.0
DIAG output source current IDIAG mA –3
VB–34
Voltage across power supply
and drive terminal
VB–D V–0.4
Output current IOA1.5
Output reverse current IOA–1.8
Electrostatic resistance ES/A V±250
4.8
–40 to +150
–40 to +115
–50 to +150
Note:
* The Zener diode has an energy capability of 200 mJ (single pulse).
* A start failure may occur if a short OFF signal of 10 ms or below is input in the VIN terminal.
Equivalent Circuit Diagram
Standard Circuit Diagram
Diagnostic Function
External Dimensions (unit: mm)
Features
● Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
● Low saturation PNP transistor use (VCE (sat) 0.2V)
● Allows direct driving using LS-TTL and C-MOS logic levels
● Built-in Zener diode in transistor eliminates the need of (or simplifies) external
surge absorption circuit
● Built-in independent overcurrent and thermal protection circuit in each circuit
● Built-in protection against reverse connection of power supply
● Tj = 150ºC guaranteed
VIN
VO
VDIAG
Normal NormalOpen load OverheatShorted load
VIN
VB
OUT
D
FLT
GND
MIC
a
c
f
b
d
g
e
SLA2501M
GND1OUT1OUT2OUT3
FLT1
IN1
IN2
VB
VB
VCC
D1D2D3
IN3
FLT2
FLT3
GND2
5
7
12
6112 10 15
13914
4
8
13
a: Part No.
b: Lot No.
31 Ellipse 3.2 • 3.8
14 • P2.03 = (28.42)
24.4
4.8
1.7
2.45
0.65
3.2
12.9
16
9.9
6.4
0.55
1.15 +0.2
–0.1 +0.2
–0.1 +0.2
–0.1
31.3
123 15
a
b
High-side Power Switch ICs [With Diagnostic Function, 3-circuits]
SLA2501M
36
a: Pre-regulator
b: Overvoltage protection circuit
c: Control circuit
d: Driver circuit
e: Overcurrent protection circuit
f: Diagnostic circuit
g: Thermal protection circuit
±0.1
±0.2
±0.2
±0.15 ±0.2
±0.2
±0.2
±0.2
±0.5
±0.2
±0.1
±0.2
±0.15
0102030
0
2
4
Iq (mA)
VB (V)
3
1
5
40
=
T –40ºC
a
=
T 25ºC
a
=
T 125ºC
a
=
V 0V
IN
0102030
0
IB (mA)
VB (V)
=
T –40ºC
a
40
=
T 25ºC
a
=
T 125ºC
a
10
20
30
40 =
V 5V
IN
0123
0
IO (A)
3.5
1.0
0.5
VCE (sat) (V)
=
T –40ºC
a
=
T 25ºC
a
=
T 125ºC
a
=
VB6 to 16V
=
T 150ºC
a
=
VIN 5V
012
0
IO (A)
20
10
345
=
VB14V
012
0
IO (A)
20
10
34
=
VB14V
VO (V)
VO (V)
012
0
VO (V)
20
10
34
=
VB14V
IO (A)
01 2
0
VO (V)
VIN (V)
=
T 125ºC
a
20
10
34
25ºC –40ºC
=
VB16V =
I1A
OUT
0--50
1.0
IIH (mA)
Ta (ºC)
=
VB14V
0.5
0
50 100 125
0V
=
VIN
0–50
20
IIL (µA)
Ta (ºC)
=
VB14V
10
050 100 125
0V
=
VIN
0–50
0.3
Ta (ºC)
=
VB14V
0
50 100 125
5V
=
VIN
0.2
0.1
VDL (V)
3 (mA)
=
IFLT
Ta (ºC)
=
VB16V
0100
10
FLT
V (V)
10mA
=
IO
VO (V)
060
5
10
20
160 180
O
V
FLT
V
0
IF (A)
0
1.4
1.0
VF (V)
1234
a
T=125ºC
--
a
T=40ºC
a
T=25ºC
1.2
0.2
0.4
0.6
0.8
37
■ Quiescent Circuit Current (single circuit) ■ Circuit Current (single circuit) ■ Saturation Voltage of Output Transistor
■ Overcurrent Protection Characteristics (Ta=25ºC) ■ Overcurrent Protection Characteristics (Ta=125ºC)
■ Input Current (Output OFF)
■ Input Current (Output ON)
■ Threshold Input Voltage
■ Overcurrent Protection Characteristics (Ta= –40ºC)
■ Output Reverse Current ■ Thermal Protection
■ Saturation Voltage of DIAG Output
Electrical Characteristics
High-side Power Switch ICs [With Diagnostic Function, 3-circuits]
SLA2501M
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
(Ta=25ºC)
Power supply voltage
Input terminal voltage
DIAG output applied voltage
Power Dissipation
Input current
Operating power supply voltage
Quiescent circuit current (per circuit)
Open load detection resistor
Output transfer time
DIAG output transfer time
(VBopr =14V, Ta=25ºC unless otherwise specified)
Junction temperature
Operating temperature
Storage temperature
VB
VIN
VDIAG
VBopr
VIN = 0 V
VIN = 5 V
VIN = 0 V
V
O
= V
Bopr
–1.9V
IO = 1 A
IO = 1 A
IO = 1 A
IO = 1 A
V
512
6.0
0.8
0
16
mA
1.0
100
mA
30
8 30
15
10
15
30
30
30
µA
kΩ
µs
µs
µs
µs
Iq
Threshold input voltage 3.0 VVINth
IIN
IIN
Overcurrent protection starting
current
1.6 AIS
Ropen
Leak current of DIAG output VDIAG = 5 V100 µAIDGH
Saturation voltage of DIAG output
IDIAG = 3 m A0.3 V
VDL
Saturation voltage of output
transistor IO 1.0A, VBopr = 6 to 16V0.5 VVCE (sat)
Output terminal sink current VO = 0V, VIN = 0 V2.0 mAIO (off)
TON
TOFF
TPLH
TPHL
PD
Tj
TOP
Tstg
Hi output
Lo output
V
V
Stand-alone operation without
heatsink; all circuits operating
V
W
ºC
ºC
ºC
–13 to +40
–0.3 to +7.0
–0.3 to +7.0
DIAG output source current IDIAG mA3
Output current IOA1.2
4.8
–40 to +150
–40 to +100
–50 to +150
Note: * The rule of protection against reverse connection of power supply is VB= –13V, one minute
(all terminals except VB and GND should be open).
Equivalent Circuit Diagram
Standard Circuit Diagram
Diagnostic Function
External Dimensions (unit: mm)
Features
● Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
● Low saturation PNP transistor use (VCE (sat) 0.5V)
● Allows direct driving using LS-TTL and C-MOS logic levels
● Built-in overcurrent protection circuits
● Built-in protection against reverse connection of power supply
● Tj = 150ºC guaranteed
a: Part No.
b: Lot No.
31 Ellipse 3.2 • 3.8
14 • P2.03 = (28.42)
24.4
4.8
1.7
2.45
0.65
3.2
12.9
16
9.9
6.4
0.55
1.15 +0.2
–0.1 +0.2
–0.1 +0.2
–0.1
31.3
123 15
a
b
VIN VO
HH
LL
Truth table
SLA2502M
PZ
D1
DIAG
5.1kΩ
GND
IN
Out
VCC
VB
Load
GND
GND
GND
GND
VB
VIN
VOUT
IO
VDIAG
Normal Shorted load Open load Overvoltage Overheat
ERROR SIGNAL for CPU
TSD
OVER
VOLTAGE
OPENOPEN
SHORT
Is
3.0V
0.8V
NI2
NI1
VB
Out1
Out2
Pre. Reg.
Drive
Drive
T.S.D
2
3
8
1
7
6
5
4
DIAG1
DIAG2
GND1
DIAG DET
DIAG DET
The MIC is bound by the dotted lines.
11kΩ typ.
CONT.
11kΩ typ.
CONT.
O.C.P
O.C.P
NI4
NI3
Out3
Out4
Pre. Reg.
Drive
Drive
T.S.D
10
11
9
15
14
13
12
DIAG3
DIAG4
GND4
DIAG DET
DIAG DET
11kΩ typ.
CONT.
11kΩ typ.
CONT.
O.C.P
O.C.P
SLA2502M
[Abbreviations]
Drive: Drive circuit
CONT: ON/OFF circuit
Pre.Reg: Pre-regulator
DIAG.DET.: Diagnostic circuit
O.C.P.: Overcurrent protection
T.S.D.: Thermal protection
High-side Power Switch ICs [With Diagnostic Function, 4-circuits]
SLA2502M
38
Note 1: A pull-down resistor (11kΩ typ.) is connected to the IN
terminal. VOUT turns "L" when a high impedance is
connected to the IN terminal in series.
Note 2: Grounds GND1 and GND2 are not wired internally. They
must be shorted at a pattern near the product.
±0.2
±0.2
±0.2
±0.2
±0.2±0.5
±0.2
±0.2
±0.2
±0.1
±0.1
±0.15
±0.15
0102030
0
20
50 –40ºC
25ºC
125ºC
VIN = 0V
VIN = 0V
40
IB (mA)
VB (V)
30
10
60
4640
012
0
15
VO (V)
VIN (V)
10
5
20
3
–50 0 50 100
0
0.2
VDL (V)
Ta (ºC)
0.1
0.3
150
0–50 10050
0
2
IIL (µA)
Ta (ºC)
1
3
150
0102030
0
150
IB (mA)
VB (V)
100
50
200
4640 0 1 2
0
VCE (sat) (V)
IO (A)
0.5
VB
Ta =
(VB = 14V)
Ta =
1.0
3
Ta =
25ºC
125ºC
–40ºC
Ta =
125ºC 25ºC
–40ºC
VB = 14V
VIN = 0V
210543
0
0.4
0.3
0.2
0.1
IIH (mA)
VIN (V)
0.5
6
VB =
012
0
15
VO (V)
IO (A)
10
5
20
43
18V
14V
6V
125ºC –40ºC
VB = 14V
–40ºC
Ta =
125ºC
VB = 14V
IDIAG = 3mA
0102030
0
Iq (mA)
VB (V)
10
20
4640
VO shorted
VO open
VIN = 0V
Ta = – 40V
25V
125V
39
■ Circuit Current (single circuit) ■ Circuit Current (4 circuits) ■ Saturation Voltage of Output Transistor
■ Input Current (Output Hi)
■ Input Current (Output OFF)
■ Threshold Input Voltage
■
Overcurrent Protection Characteristics (Ta=–40ºC)
■ Quiescent Circuit Current (dual circuit)
■ Saturation Voltage of DIAG Output
25ºC
25ºC
Electrical Characteristics
050 150100
■ Thermal Protection Characteristics
0
VO1 (V)
Ta (ºC)
10
5
15
200 51015
■ Open Load Detection Resistor
0
ROPEN (kΩ)
VB (V)
10
5
15
20
510 2015
■ Output Terminal Leak Current (VO = 0V)
0.5
IOLEAK (mA)
VB (V)
1.1
1.0
0.9
0.8
0.7
0.6
25
TSD
VB = 14V
RL = 1.3kΩ
Ta =
Ta =
–40ºC
25ºC
125ºC 125ºC
25ºC
–40ºC
High-side Power Switch ICs [With Diagnostic Function, 4-circuits]
SLA2502M
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
(Ta=25ºC)
Power supply voltage
Input terminal voltage
Input terminal current
DG terminal voltage
Input threshold
voltage
Inpup current
Operating power supply voltage
Quiescent circuit current
Thermal shutdown operating temperature
Load open detection threshold voltage
DG leak current
Low level DG output voltage
Output transfer time
DG output transfer time
(VB=14V, Ta=25ºC unless otherwise specified)
Output ON resistance
Channel temperature
Operating temperature
Storage temperature
VB
VIN
IIN
VB (opr)
VIN=0V, VOUT=0V
IO=1A
IO=1A, Ta=80ºC
Ta= –40 to +105ºC
Ta= –40 to +105ºC
VIN=5V
VIN=0V
VOUT=VO–1.5V
VOUT=0V
RL=14Ω, VO= –5V
RL=14Ω, VO •10%
VDG=5.5V
IDG=1.6mA
V
50
2.0
1.8
70
1
5.5 35
mA
200 mΩ
300 mΩ
3.0 V
V
200
12
µA
165
5
3
4.5
70
3
140
35
0.15
70
45
90
20
0.5
140
120
µA
155
1.5
ºC
A
V
µs
µs
µA
V
µs
Iq
Output leak current VOUT=0V
1.4
1.0
100 µAIO, leak
R
DS (ON)
VIHth
VILth
IIH
IIL
TTSD
Overcurrent protection starting current
Internal current limit
1.9 AIS
ILim
Vopen
TON
TOFF
VDGL
IDG
TPLH
TPHL µs
VDG
VDS
IO
PD
IF
Tch
TOP
Tstg
Output ON
Output OFF
Output ON
Output OFF
V
V
Ta=25ºC
mA
V
V
A
W
A
ºC
ºC
ºC
35
–0.3 to 7
5
–0.3 to 7
DG terminal current
Drain to source voltage
Output current
Power dissipation
Source to drain Di forward current
IDG mA 5
VB–45
1.8
2
0.8
150
–40 to +105
–40 to +150
Parameter Unit
Ratings
Recommended Operating Conditions (for one channel)
Wave Form
Power supply voltage
VIH
VIL
IO
RIN
RDG
5.5
4
–0.3
10
10
16
5.5
0.9
1
20
20
V
V
V
A
kΩ
kΩ
Block Diagram (for one channel)
Standard Connection Diagram
Timing Chart
External Dimensions (unit: mm)
Features
● Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
● DMOS 2ch output
● Allows ON/OFF using C-MOS logic level
● Built-in overcurrent and thermal protection circuits
VIN DG
Open load
Normal
Mode
Shorted load
Overheat
H
L
VO
H
L
H
L
H
L
H
H
H
H
H
L
L
L
L
L
(Limiting)
H
L
L
L
L
L
Note: *1. Transient time is showed Wave Form below.
40
High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits]
SPF5003
*1
*1
12.2±0.2
1.0
2.5±0.2 7.5±0.2
10.5±0.2
1.27±0.25
16
18
9
+0.1
–0.05
0.4+0.15
–0.05
0.25+0.15
–0.05
2.0+0.2
–0.8
Fin
thickness
min max
IN
DG
VB
GND OUT
Thermal
Protect
Input
Logic
Lavel
Shifting
DG
Logic
Open/Short
Sense
Charge
Pump
Current
Limit
Clamp
Chopper
Bias
Vin 1
(7V max)
Vin 2
(7V max)
GND
DG2
DG1
5V
OUT1
OUT2
5V
(10,11)
9
5
RIN
C
P
URIN
124
6
14
15,16
7,8
13
1SPF5003
VB
(2, 3)
V
B
V
IN
ON V
IN
OFF V
O
open OCP TSD
Normal Normal
Over-
heat
Normal Normal
Normal
Shorted loadOpen load
High inpidance
Internal current limit
TSDON
TSDOFF
V
IN
V
OUT
I
OUT
DG
* R
IN
and R
DG
are needed to protect CPU and SPF5003 in case of reverse
connection of V
B
terminal.
* Make V
B
of 1Pin and 9Pin short from the fin to be plated by solder.
RDG
RDG
TON
VIN
VOUT
VDG
VDG • 90%
VDG
•
10%
VOUT
•
10%
VOUT–5V
TOFF
TPLH TPHL
Output transfer time
DG output transfer time
Load
Load
41
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
(Ta=25ºC)
Power supply voltage
Input terminal voltage
Input terminal current
DG terminal voltage
Input voltage
Inpup current
Operating power supply voltage
Quiescent circuit current
Thermal shutdown operating temperature
Load open detection threshold voltage
DG leak current
Low level DG output voltage
Output transfer time
DG output transfer time
(VB=14V, Ta=25ºC unless otherwise specified)
Output ON resistance
Channel temperature
Operating temperature
Storage temperature
VB
VIN
IIN
VB (opr)
VIN=0V, VOUT=0V
IO=2A
IO=1A, Ta=80ºC
VIN=5V
VOUT=V
O
–1.5V
VOUT=0V
VDG=5.5V
IDG=1.6mA
V
50
2.0
1.8
70
1
5.5 35
mA
150 mΩ
250 mΩ
3.0 V
V
µA
165
10
165
3
60
0.15
70
45
20
155 ºC
A
V
µs
µs
µA
V
µs
Iq
Output leak current VOUT=0V
Ta= –40 to +105ºC
Ta= –40 to +105ºC1.0
µAIO, leak
R
DS (ON)
VIH
VIL
IIH
TTSD
Overcurrent protection starting current
Internal current limit
2.6 AIS
ILim
Vopen
TON
TOFF
VDGL
IDG
TPLH
TPHL µs
VDG
VDS
IO
PD
IF
Tch
TOP
Tstg
Output ON
Output OFF
Output ON
V
V
Ta=25ºC
mA
V
V
A
W
A
ºC
ºC
ºC
35
–0.3 to 7
5
–0.3 to 7
DG terminal current
Drain to source voltage
Output current
Power dissipation
Source to drain Di forward current
IDG mA 5
VB–45
2.5
2.7
0.8
150
–40 to +105
–40 to +150
Parameter Unit
Ratings
Recommended Operating Conditions (for one channel)
Power supply voltage
VIH
VIL
IO
RIN
RDG
5.5
4
–0.3
10
10
16
5.5
0.9
1.15
20
20
V
V
V
A
kΩ
kΩ
External Dimensions (unit: mm)
Features
● Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
● DMOS 2ch output
● Allows ON/OFF using C-MOS logic level
● Built-in overcurrent and thermal protection circuits
42
High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits]
SPF5004
min max
Block Diagram (for one channel)
Standard Connection Diagram
Timing Chart
IN
DG
VB
GND OUT
Thermal
Protect
Input
Logic
Lavel
Shifting
DG
Logic
Open/Short
Sense
Charge
Pump
Current
Limit
Clamp
Chopper
Bias
Vin 1
(7V max)
Vin 2
(7V max)
GND
DG2
DG1
5V
OUT1
OUT2
5V
(16,17,18)
13
23
C
P
U
921
24
12
14,15
2,3
11
1SPF5004
VB
(4,5,6)
1.0
10.5±0.3
+0.1
–0.05
0.25+0.15
–0.05
2.0+0.2
–0.8
Fin
thickness
17.28±0.2
2.5±0.2
7.5±0.2
15.58±0.2
1.27±0.25
24
112
13
0.4+0.15
–0.05
a
b
a: Part No.
b: Lot No.
* Make V
B
of 4Pin, 5Pin, 6Pin, 16Pin, 17Pin and 18Pin short from the fin
to be plated by solder.
RIN
RIN
RDG
RDG
Load
Load
V
B
V
IN
ON V
IN
OFF V
O
open OCP TSD
Normal Normal
Over-
heat
Normal Normal
Normal
Shorted loadOpen load
High inpidance
Internal current limit
TSDON
TSDOFF
V
IN
V
OUT
I
OUT
DG
VIN DG
Open load
Normal
Mode
Shorted load
Overheat
H
L
VO
H
L
H
L
H
L
H
H
H
H
H
L
L
L
L
L
(Limiting)
H
L
L
L
L
L
43
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbol
min typ max
Unit Conditions
Ratings
(Ta=25ºC)
Power supply voltage
Input terminal voltage
Input terminal current
DG terminal voltage
Input threshold
voltage
Inpup current
Operating power supply voltage
Quiescent circuit current
Thermal shutdown operating temperature
Load open detection threshold voltage
DG leak current
Low level DG output voltage
Output transfer time
DG output transfer time
(VB=14V, Ta=25ºC unless otherwise specified)
Output ON resistance
Channel temperature
Operating temperature
Storage temperature
VB
VIN
IIN
VB (opr)
VIN=0V, VOUT =0V
IO=1A
IO=1A, Ta=80ºC
Ta= –40 to +105ºC
Ta= –40 to +105ºC
VIN=5V
VIN=0V
VOUT=VO–1.5V
VOUT=0V
RL=14Ω, VOUT=VB–5V
RL=14Ω, VB •
10%
VDG=5.5V
IDG=1.6mA
V
50
2.0
1.8
70
1
5.5 35
mA
200 mΩ
350 mΩ
3.0 V
V
200
12
µA
165
5
3
4.5
70
3
140
35
0.15
70
45
90
20
0.5
140
120
µA
155
1.5
ºC
A
V
µs
µs
µA
V
µs
Iq
Output leak current VOUT=0V
1.4
1.0
100 µAIO, leak
R
DS (ON)
VIHth
VILth
IIH
IIL
TTSD
Overcurrent protection starting current
Internal current limit
1.9 AIS
ILim
Vopen
TON
TOFF
VDGL
IDG
TPLH
TPHL µs
VDG
VDS
IO
PD
IF
Tch
TOP
Tstg
Output ON
Output OFF
Output ON
Output OFF
V
V
Ta=25ºC, all circuit operating
mA
V
V
A
W
A
ºC
ºC
ºC
35
–0.3 to 7
5
–0.3 to 7
DG terminal current
Drain to source voltage
Output current
Power dissipation
Source to drain Di forward current
IDG mA 5
VB–45
1.8
2.7
0.8
150
–40 to +105
–40 to +150
Parameter Unit
Ratings
Recommended Operating Conditions (for one channel)
Power supply voltage
VIH
VIL
IO
RIN
RDG
5.5
4
–0.3
10
10
16
5.5
0.9
1
20
20
V
V
V
A
kΩ
kΩ
External Dimensions (unit: mm)
Features
● Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
● DMOS 3ch output
● Allows ON/OFF using C-MOS logic level
● Built-in overcurrent and thermal protection circuits
44
High-side Power Switch ICs [With Diagnostic Function, Surface-mount 3-circuits]
SPF5007
min max
Block Diagram (for one channel)
Standard Connection Diagram
Timing Chart
IN
DG
VB
GND OUT
Thermal
Protect
Input
Logic
Lavel
Shifting
DG
Logic
Open/Short
Sense
Charge
Pump
Current
Limit
Clamp
Chopper
Bias
IN2 IN3IN1GND1
2
13 VB
1
717 1838
5,6
10,11
20,21
4
5V
9
19
GND2 GND3
C
P
U
SPF5007
RDG
DG1
OUT1
OUT2
OUT3
DG2
DG3
RDG
RDG
RIN
RIN
RIN
* R
IN
and R
DG
are needed to protect CPU and SPF5007 in case of reverse
connection of V
B
terminal.
* Make V
B
of 1Pin and 13Pin short from the fin to be plated by solder.
1.0
10.5±0.3
+0.1
–0.05
0.25+0.15
–0.05
2.0+0.2
–0.8
Fin
thickness
17.28±0.2
2.5±0.2
7.5±0.2
15.58±0.2
1.27±0.25
24
112
13
0.4+0.15
–0.05
a
b
a: Part No.
b: Lot No.
Load
Load
Load
V
B
V
IN
ON V
IN
OFF V
O
open OCP TSD
Normal Normal
Over-
heat
Normal Normal
Normal
Shorted loadOpen load
High inpidance
Internal current limit
TSDON
TSDOFF
V
IN
V
OUT
I
OUT
DG
VIN DG
Open load
Normal
Mode
Shorted load
Overheat
H
L
VO
H
L
H
L
H
L
H
H
H
H
H
L
L
L
L
L
(Limiting)
H
L
L
L
L
L
45
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
(Ta=25ºC)
Power supply voltage 1
Power supply voltage 2
Power supply voltage 3
Output terminal voltage
Input terminal voltage
Output current
Power dissipation
Storage temperature
Channel temperature
Min. operating power supply voltage
Operating power supply voltage 1
Operating power supply voltage 2
Quiescent circuit current 1
Quiescent circuit current 2
PWM terminal input voltage
PWM terminal input current
Hold terminal input voltage
Hold terminal input current
Output ON resistance
Current sensing resistance
Overcurrent protection starting current
Thermal shutdown operating temperature
Operation circuit for current monitor output
Current monitor output voltage
Current monitor output current
Output transfer time
Output rise time
Output fall time
Current monitor output hold time
Current monitor output delay time
Hold time after inputting hold
S/H settling time
VB
Vcc
VB
Vsense+
Vsense–
VOUT
VPWM
VHold
IOUT
PD
Tstg
Tch
VB min
VB
VCC
Iqvb
Iqvcc
VPWMH
VPWML
IPWMH
VHoldH
VHoldL
IHoldH
RDSon
Rsense
Is
Ttsd
Io
VSH
ISH
ton
toff
tr
tf
tsh
tshd
tshh
tstt
Minimum operation of OUT terminal.
Vcc = 5V, V
PWM
= 0V, One circuit equivalent
Vcc = 5V, VPWM = 0 V
Vcc = 5V
Vcc = 5V, VPWM = 5V, Active H
Vcc = 5V
Vcc = 5V, VPWM = 5V, Active H
IOUT = 1 A
IOUT = 1A, Ta = 125°C
IOUT = 1 A
IOUT = 1A, Ta = 125°C
Io = 0A, Vcc = 5V
Io = 0.2A, Vcc = 5V
Io
=
0.5A, Vcc
=
5V, Ta
= –
40 to 140°C
Io
=
1.2A, Vcc
=
5V, Ta
= –
40 to 140°C
Io = 1A, Vcc = 5V, VSH = 0 V
Io = 1A, Vcc = 5V, VSH = 5 V
Io = 0.5A, Vcc
= 5V
V
V
V
mA
mA
V
µA
V
µA
Ω
Ω
Ω
Ω
A
°C
A
V
V
V
V
mA
mA
µs
µs
µs
µs
µs
µs
µs
µs
µs
6
10
3.5
3.5
3.0
150
0.2
0.488
1.219
2.925
–6
500
14
5.0
70
70
0.500
1.250
3.000
16
7.2
0.2
1.5
110
1.5
110
0.14
0.21
0.21
0.25
1.2
0.2
0.512
1.281
3.075
5
15
15
100
50
650
1
2
70
80
V
V
V
V
V
V
A
W
°C
°C
VB terminal, t = 1 min
Depends on surface-mount board pattern
0 to 32
–0.5 to 7.0
0 to 40
–0.8 to 6
Vsense+±Io • Rsense
–2 to 32
–0.5 to 7.0
2.0
2.4 to 5.0
–40 to +150
150
External Dimensions (unit: mm)
Features
● Internal current sense resistor
● High accuracy current monitor output (sample & hold function)
● Built-in overcurrent and thermal protection circuits
46
High-side Power Switch ICs
[Surface-mount 2-circuit, current monitor output function]
SPF5017
VB
=
11V, Vcc
=
5V, Io
=
1.2A,
C1
=
0.033µF
VB
=
11V, Vcc
=
5V, Io
=
1.2A,
C1
=
0.033µF, Ta
=
125°C
*1
*2
*4
*3
*3
Io = 0.5A, Vcc = 5V,
C1 = 0.033µF
1
2
3
5
4 6
20
18
19
17
Vcc
70kΩ
CMOS Logic
S/H
OSC
Charge
Pump
TSD OCP
lamp
SFP5017
–
+
Sense
R
Sense
MOS
Sense+
Sense–
OUT
VB
LG
C
PWM
Hold
S/H
clamp
D
S
Ordinary operation
(auto hold)
Ordinary operation
(auto hold)
Ordinary operation
(external hold)
Thermal
protection
Overcurrent
protection
VPWM
Vout
Icoil
VS/H
VHold
*1*1*2
500 to 650 500 to 650
usec usec
Truth table
VPWM LH
VOUT LH
1.0
10.5±0.3
+0.1
–0.05
0.25+0.15
–0.05
Fin
thickness
14.74±0.2
2.5±0.2 7.5±0.2
2.0±0.2
13.04±0.2
1.27±0.25
20
110
11
0.4+0.15
–0.05
a
b
a) Part No.
b) Lot No.
Block Diagram (for one channel)
Standard Connection Diagram
Timing Chart
VCC VB
1
SFP5017
PWM
Hold
S/H
C
C1
D2
D1
LG
OUT
Sense+
Sense–
17
19
18
20
1kΩ
5.1
0.01
46
5
3
2
Controlling
microcomputer
CPU
* Use a Schottky Di for D2 when the Sense+ terminal
is lower than the abs. max. rated voltage (–0.8V)
µF
kΩ
(VB=14V, Ta=25ºC unless otherwise specified) – One circuit equivalent
Current sensing voltage
Note:
*1: Accuracy warranty range for current monitor output
*2: Equivalent errors are not included in current monitor output accuracy.
*3: With built-in pull-down resistance (70kΩ typ)
*4: Self-excitation and oscillation type
*5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1).
The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics.
*1
70kΩ
47
External Dimensions (unit: mm)
Features
● Internal current sense resistor
● High accuracy current monitor output (sample & hold function)
● Built-in overcurrent and thermal protection circuits
48
High-side Power Switch ICs
[Surface-mount, current monitor output function]
SPF5018
12.2±0.2
1.0
2.5±0.2 7.5±0.2
10.5±0.2
1.27±0.25
16
18
9
+0.1
–0.05
0.4+0.15
–0.05
0.25+0.15
–0.05
2.0+0.2
–0.8
Fin
thickness
2
3
4
6
5 7
15
13
14
11
Vcc
CMOS Logic
S/H
OSC
TSD OCP
lamp
Sense
MOS OUT
VB
LG
C
PWM
Hold
S/H
clamp
D
S
Block Diagram (for one channel)
Standard Connection Diagram
Timing Chart
VCC VB
2
SFP5018
PWM
Hold
S/H
C
C1
D2
D1
LG
OUT
Sense+
Sense–
11
14
13
15
5.1
0.01
57
6
4
3
* Use a Schottky Di for D2 when the Sense+ terminal
is lower than the abs. max. rated voltage (–0.8V)
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings (Ta=25ºC)
Power supply voltage 1
Power supply voltage 2
Power supply voltage 3
Output terminal voltage
Input terminal voltage
Output current
Power dissipation
Storage temperature
Channel temperature
VB
Vcc
VB
Vsense+
Vsense–
VOUT
VPWM
VHold
IOUT
PD
Tstg
Tch
V
V
V
V
V
V
A
W
°C
°C
VB terminal, t = 1 min
Depends on surface-mount board pattern
0 to 32
–0.5 to 7.0
0 to 40
–0.8 to 6
Vsense+±Io • Rsense
–2 to 32
–0.5 to 7.0
2.0
2.0
–40 to +150
150
Current sensing voltage
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
Min. operating power supply voltage
Operating power supply voltage 1
Operating power supply voltage 2
Quiescent circuit current 1
Quiescent circuit current 2
PWM terminal input voltage
PWM terminal input current
Hold terminal input voltage
Hold terminal input current
Output ON resistance
Current sensing resistance
Overcurrent protection starting current
Thermal shutdown operating temperature
Operation circuit for current monitor output
Current monitor output voltage
Current monitor output current
Output transfer time
Output rise time
Output fall time
Current monitor output hold time
Current monitor output delay time
Hold time after inputting hold
S/H settling time
VB min
VB
VCC
Iqvb
Iqvcc
VPWMH
VPWML
IPWMH
VHoldH
VHoldL
IHoldH
RDSon
Rsense
Is
Ttsd
Io
VSH
ISH
ton
toff
tr
tf
tsh
tshd
tshh
tstt
Minimum operation of OUT terminal.
Vcc = 5V, VPWM = 0 V
Vcc = 5V, VPWM = 0 V
Vcc = 5V
Vcc = 5V, VPWM = 5V, Active H
Vcc = 5V
Vcc = 5V, VPWM = 5V, Active H
IOUT = 1 A
IOUT = 1A, Ta = 125°C
IOUT = 1 A
IOUT = 1A, Ta = 125°C
Io = 0A, Vcc = 5V
Io = 0.2A, Vcc = 5V
Io
=
0.5A, Vcc
=
5V, Ta
= –
40 to 140°C
Io
=
1.2A, Vcc
=
5V, Ta
= –
40 to 140°C
Io = 1A, Vcc = 5V, VSH = 0 V
Io = 1A, Vcc = 5V, VSH = 5 V
Io = 0.5A, Vcc
= 5V
V
V
V
mA
mA
V
µA
V
µA
Ω
Ω
Ω
Ω
A
°C
A
V
V
V
V
mA
mA
µs
µs
µs
µs
µs
µs
µs
µs
µs
6
10
3.5
3.5
3.0
150
0.2
0.488
1.219
2.925
–6
500
14
5.0
70
70
0.500
1.250
3.000
16
7.2
0.2
1.5
110
1.5
110
0.14
0.21
0.21
0.25
1.2
0.2
0.512
1.281
3.075
5
15
15
100
50
650
1
2
70
80
VB
=
11V, Vcc
=
5V, Io
=
1.2A,
C1
=
0.033µF
VB
=
11V, Vcc
=
5V, Io
=
1.2A,
C1
=
0.033µF, Ta
=
125°C
*1
*2
*4
*3
*3
Io = 0.5A, Vcc = 5V,
C1 = 0.033µF
(VB=14V, Ta=25ºC unless otherwise specified)
Note:
*1: Accuracy warranty range for current monitor output
*2: Equivalent errors are not included in current monitor output accuracy.
*3: With built-in pull-down resistance (70kΩ typ)
*4: Self-excitation and oscillation type
*5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1).
The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics.
*1
Ordinary operation
(auto hold)
Ordinary operation
(auto hold)
Ordinary operation
(external hold)
Thermal
protection
Overcurrent
protection
VPWM
Vout
Icoil
VS/H
VHold
*1*1*2
500 to 650 500 to 650
usec usec
Truth table
VPWM LH
VOUT LH
1kΩ
Controlling
microcomputer
CPU
µF
kΩ
70kΩ
70kΩ
Charge
Pump
Sense
R
–
+
Sense+
Sense–
49
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
(Ta=25ºC)
Power supply voltage
Input terminal voltage
Power Dissipation
Input voltage
Power supply voltage
Quiescent circuit current
Overcurrent protection starting
current
Forward voltage of output stage
diode
Output transfer time
(VB=14V, Ta=25ºC unless otherwise specified)
Storage temperature
Channel temperature
Output avalanche capability
VB
VIN
VBopr
VIN = 0V (all inputs)
IO = 1 A
RL = 1 4 Ω, IO = 1 A
RL = 1 4 Ω, IO = 1 A
RL = 1 4 Ω, IO = 1 A
RL = 1 4 Ω, IO = 1 A
V
5
0.4
0.5
0.6
0.7
50
7
5.5 25
mA
1.5
5.5 V
12
8
10
5
V
A
V
µs
µs
Iq
Operating circuit current VIN = 5V (all inputs) 8 12 mAICC
3.5
–0.5
VIN
VIN
IS
Thermal protection starting
temperature 151 165
1.1
41
Output rise time µsTr
Output fall time µsTf
ºCTTSD
Overvoltage protection starting
voltage
25 VVB (ovp)
VF
Output leak current VO = 37V
IF = 0.5A
10
1.6
40
µAIOH
Output clamp voltage IO = 1 A55 V
V
OUT
(
clamp
)
Output ON resistance
30
Ω
RDS (ON)
VB = 5.5V
Ω
TON
TOFF
PD
Tstg
Tch
EAV
Hi output
Lo output
Input current
VIN = 5 V
VIN = 0 V
50 µA
µA
IIN
IIN
Hi output
Lo output
V
V
W
ºC
ºC
mJ Single pulse
40
–0.5 to +7.5
Output terminal voltage VOUT V37
Output current IOA1.8
2
–40 to +150
150
50
Equivalent Circuit Diagram
Circuit Example
Timing Chart
External Dimensions (unit: mm)
Features
● DMOS 4ch output
● Allows ON/OFF using C-MOS logic level
● Built-in overcurrent, overvoltage and thermal protection circuits
Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A
50
12.2
1.0
2.5 7.5
10.5
1.27
16
18
9
0.4+0.15
–0.05
+0.1
–0.05
+0.15
–0.05
+0.2
–0.8
0.25
2.0
Fin
thickness
VBVOUT 1
VIN 1
VIN 2
VIN 3
VIN 4
VOUT 2
VOUT 3
VOUT 4
L-GND
P-GND
Reg. REF
OVP
TSD
250kΩ typ
Gate Protction
Gate Driver
OCP
Use L-GND and P-GND being connected.
VB
VOUT
VIN
OVP
Normal Overvoltage Overheat Overcurrent
* Self-excited frequency is used in the overcurrent protection.
VIN VO
HL
LH
Truth table
±0.2
±0.25
±0.2
±0.2 ±0.2
VCC
VB
4
6
12
14
IN1
OUT1 OUT3 OUT2 OUT4
IN2
IN3
IN4
L-GND P-GND
CONTROL
UNIT 13 1,9
SPF5002A
210 7 15 5
Note: * At the clamping operation, refer to VOUT (clamp) in the section of electrical characteristics.
*
51
■ Quiescent Circuit Current
010203040
0
4
8
Iq (mA)
VB (V)
6
2
10
0
4
8
6
2
10
0
4
8
6
2
10
■ Circuit Current (single circuit)
010203040
Id (mA)
VB (V)
■ Threshold Input Voltage
01 2 3
0
5
10
VO (V)
VIN (th) (V)
15
■ Overcurrent Protection Characteristics
0 1.0 2.0
0
VO (V)
IO (A)
10
5
15
■ Forward Voltage of Output Stage Diode
0 0.5 1.0 1.5
0
0.5
1.5
IF (A)
VF (V)
1.0
■ Output ON Voltage
0 0.5 1.0 1.5 2.0
0
0.4
0.8
VDS (ON) (V)
IO (A)
0.6
0.2
1.0
■ Circuit Current (4 circuits)
10 20 30 40
Id (mA)
VB (V)
■ Overvoltage Protection Starting Voltage
010203040
0
VO (V)
VB (V)
10
5
15
Ta = 120ºC
Ta = 25ºC
Ta = –40ºC
Ta = 125ºC
Ta = 25ºC
Ta = –40ºC
Ta = 25ºC
Ta = –40ºC
Ta = 125ºC
VO = 14V
IO = 0.1A Ta = –40ºC
Ta = 125ºC
Ta = 25ºC
VB = 14V
Ta = 125ºC
Ta = 25ºC
Ta = –40ºC
VB =14V
Ta = 120ºC
Ta = 25ºC
Ta = –40ºC
IO = 0.1A
Ta = –40ºC
Ta = 25ºC
Ta = 125ºC
Electrical Characteristics
Ta = –40ºC
Ta = 25ºC
Ta = 125ºC
Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings (Ta=25ºC)
Power supply voltage
Power Dissipation
Storage temperature
Channel temperature
Output avalanche capability
VB
PD
Tstg
Tch
EAV
V
W
ºC
ºC
mJ Single pulse
40
Input terminal voltage V
(IN, SEL, B/U)
V–0.5 to +6.5
Output terminal voltage (
DC)
VOUT V50
Output terminal voltage
(pulse)
VOUT VOutput clamping (max 70V)
Output current (
DC)
IOUT A±2.9
Output current
(pulse) IOUT A
Over current protection starting current
Diag output source current VDIAG V6.5
Diag output voltage IDIAG mA5
2.8
–40 to +150
150
80
Equivalent Circuit Diagram
Circuit Example
Timing Chart
External Dimensions (unit: mm)
Features
● DMOS 4ch output
● Allows ON/OFF using C-MOS logic level
● Built-in over current and thermal protection circuit and diagnostic function to
detect open load
● Built-in output status signals (over current, over heat and open load)
52
VB
(7)
VIN B/U
(17)
VIN SEL
(5)
VIN 1
(6)
VIN 2
(8)
VIN 3
(18)
VIN 4
(20)
L-GND
(19)
VOUT1
(4)
VOUT2
(9)
VDIAG1
(3)
VOUT
SENSE
VDIAG2
(10)
P-GND1
(1, 2)
P-GND2
(11, 12)
VOUT3
(16)
VDIAG3
(15)
P-GND3
(13, 14)
VOUT4
(21)
VDIAG4
(22)
P-GND4
(23, 24)
RegRef
Gate Protection
Gate driver
TSD
OUT OCP
Latch
Set
Reset
OSC
Monitor
VB
7
6
3
10
15
22
8
18
20
17
19 1, 2 11, 12 13, 14 23, 24
5
491621
LG PG1 PG2 PG3 PG4
VIN1
VIN2
VIN3
VIN4
VINB/U
VINSEL
OUT1 OUT2 OUT3 OUT4
DIAG1
DIAG2
DIAG3
DIAG4
SPF5009
Main input signal 1
VIN1
Main input signal 2
VIN2
Backup input signal
VINB/U
Input select signal
VINSEL
Power supply voltage
VB
Output voltage 1
VOUT1
Output current 1
IOUT1
DIAG output 1
VDIAG1
DIAG output 2
VDIAG2
Nomal Nomal
Main mode Backup mode
Output 1
Overheat
Output 1
Overheat
Output 1
Over current
Output 1
Open load
Output 1
Over current
Output 1
Open load
OCP OCP
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
Quiescent circuit current
Operating circuit current
Overcurrent protection starting current
Forward voltage of output stage diode
Output moniter threshold voltage
(VB =14V, Ta = 25ºC unless otherwise specified)
IqVB=14V
,
VIN=0V
VB=14V
,
VO=1A
VB=14V
VB=14V
,
RL=14Ω, IO=1A
VB=14V
,
RL=14Ω, IO=1A
VB=14V
,
RL=14Ω, IO=1A
VB=14V
,
RL=14Ω, IO=1A
VB=14V
,
RL=14Ω, IO=1A
VB=14V
,
RL=14Ω, IO=1A
9
65
15
12
Power supply voltage VB (opr) V5.5 40
mA
200
1.5
V
12
8
10
5
V
V
V
V
µs
µs
Id
Input voltage
(1 to 4, SEL, B/U)
Input current (single circuit)
(1 to 4, SEL, B/U)
VB=14V
,
VIN=5V (all inputs)12
6.5
mA
VIN (H) 3.5
–0.5
VIN (L)
IIN (H)
IS
Thermal shutdown operating temperature
151 165
60
Output rise time
Output fall time
Output transfer time
µsTr
µsTf
12
DIAG output transfer time
tDON
8 µs
µs
tDOFF
ºCTTSD
3.0 A
DIAG output voltage
6.4
VV
DIAG (L)
V
DIAG (H)
Vth
M
Output leak current
IF=1A
0.5
10
DIAG output leak current µAIDH
IOH
VF
Output clamp voltage
Output ON resistance
VB=14V
,
IO=1A
VB=14V
,
VO=50V
70
50
1.5
2
6.5
VVOUT
(clamp)
VB=14V
,
IO=1A 0.18 Ω
TON
TOFF
VB=14V
,
VIN=0V
VB=14V
,
VIN=5V
VB=14V
VB=14V
,
VDIAG=6.5V
VB=14V
,
IDIAG=5mA
VB=14V
,
VDIAG=6.5V
VB=14V
VB=14V
30 µA
µA
µA
IIN (L)
RDS (ON)
1.0
10.5±0.3
+0.1
–0.05
0.25+0.15
–0.05
2.0+0.2
–0.8
17.28±0.2
2.5±0.2
7.5±0.2
15.58±0.2
1.27±0.25
24
112
13
0.4+0.15
–0.05
a
b
a: Part No.
b: Lot No.
Fin
thickness
Low-side Switch ICs [Surface-mount 4-circuits]
SPF5009
(under development)
53
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
(Ta=25ºC)
Power supply voltage 1
Power supply voltage 2
Logic input voltage
Power Dissipation
Input voltage
Quiescent circuit current
Overcurrent protection
operating current
Forward voltage of output stage diode
Output transfer time
(VB =14V, Ta =25ºC unless otherwise specified)
Storage temperature
Channel temperature
Output avalanche capability
VB
VIN
VCC (opr)
VB=14V
,
VIN=0V
VB=14V
,
VO=1A
VB=14V
VB=14V
,
RL=14Ω, IO=1A
V
4
50
6
4.5 5.5
Operating power supply voltage 1
Operating power supply voltage 2
VB (opr) V5.5 40
mA
1.5
5.5 V
12
8
10
5
V
A
V
µs
µs
Iq
Operating circuit current VB=14V
,
VIN=5V 8 12 mAId
3.5
–0.5
VIN
VIN
IS
Thermal shutdown operating temperature
151 165
0.2
8
6
A 5
0.195
45
Output rise time µsTr
Output fall time µsTf
0.205
Output-diag voltage ratio ra (DIAG)
V
B
=
14V
,
V
CC
=
5V, V
O
=
40V
VB
=
14V
,
VO
=
1 to 14V, Rdiag
=
500kΩ
4.85
Diag output clamping voltage VV
DIAG (clamp)
ºC
TTSD
6 A
Overvoltage protection starting voltage
25 VVB (ovp)
VF
Output leak current
V
B=
14V
,
VCC
=
5V, VIN
=
0V,
VO
=
40V, Ta
=
25ºC
V
B=
14V
,
VCC
=
5V, VIN
=
0V,
VO
=
14V, Ta
=
25ºC
IF=1A
2.8
1.6
40
Overvoltage protection hysteresis voltage
VVB
(ovp•hys)
mA
IOH
900 µA
Output clamp voltage VB=14V
,
IO=1A55 VV
OUT (clamp)
Output ON resistance
V
B=
14V
,
IO
=
1A, Ta
=
1
25ºC
0.3
–30
Ω
RDS (ON)
V
B=
14V
,
IO
=
1A, Ta
=
25ºC
0.2 Ω
TON
TOFF
PD
Tstg
Tch
EAV
Hi output
Lo output
Input current
VB=14V
,
VIN=5V
VB=14V
,
IO
1A
VB=14V
VB=14V
,
Ta=–40
ºC
VB=14V
,
Ta=25
ºC
VB=14V
,
Ta=125
ºC
50 µA
µA
IIN
IIN
Hi output
Lo output
V
V
W
ºC
ºC
mJ Single pulse
40
–0.5 to +7.5
Output voltage VOV40 (DC)
Output current IOASelf Limited
VCC V7.5
Diag output voltage VDIAG V0 to VCC
2.8 to 5
–40 to +150
150
100
Equivalent Circuit Diagram
Circuit Example
Timing Chart
External Dimensions (unit: mm)
Features
● Output monitor circuit (DIAG)
● DMOS 4ch output
● Allows ON/OFF using C-MOS logic level
● Built-in overcurrent, overvoltage and thermal protection circuits
Low-side Switch ICs [Surface-mount 4-circuits with Output Monitor]
SPF5012
54
VIN VO
HL
LH
Truth table
VIN1
VIN2
VCC1-2 VCC3-4 VOUT1V
OUT2V
OUT3V
OUT4VB
VCC
VIN3
VIN4
L-GND
6
718 19 3 10 15 22
5
8
17
20
16
21
4
9
11,12 13,14 23,241, 2
P-GND1 P-GND2
Diag1
Diag2
Diag3
Diag4
P-GND3 P-GND4
SPF5012
Input
signal
Diag
output
VB
(19)
VIN1
(4)
VIN2
(9)
VIN3
(16)
VIN4
(21)
L. GND
(6)
VCC1-2
(7)
VCC3-4
(18)
Diag1
(5)
Diag2
(8)
Diag3
(17)
Diag4
(20)
VOUT1
(3)
VOUT2
(10)
VOUT3
(15)
VOUT4
(22)
P. GND1
(1, 2)
P. GND2
(11, 12)
P. GND3
(13, 14)
P. GND4
(23, 24)
Gate Protection
Reg
OVP
OCP
TSD
Ch1
Ch2
Ch3
Ch4
Gate driver
*1. At the clamping operation, refer to the section of VOUT (clamp) in electrical characteristics
*2. Changes by the patern of mounted substrate
*1
*2
1.0
10.5±0.3
+0.1
–0.05
0.25+0.15
–0.05
2.5±0.2
17.28±0.2
7.5±0.2
2±0.2
15.58±0.2
1.27±0.25
24
112
13
0.4+0.15
–0.05
a
b
a: Part No.
b: Lot No.
Fin
thickness
VB
VOUT
VIN
OVP
Normal Overvoltage Overheat Overcurrent
* Self-excited frequency is used in the overcurrent protection.
Short L-GND and P-GND
in a pattern near the product.
55
OUTAOUTA
45
STBY
P-GND L-GND L-GND
981
C
12
3
10
2
611
7
N.C.
4.7kΩ
OUTBOUT BVS
DIAG
IA/A
IB/B ZD: VS <35V
C 100µF
(Reference)
Stepper
motor
SLA4708M CPU
ZD
5V
+
Standard Circuit Diagram
External Dimensions (unit: mm)
Stepper-motor Driver ICs SLA4708M
56
Features
● High output breakdown voltage of 50V
● Affluent output current of 1.5A
● Built-in overcurrent, overvoltage and thermal protection circuits
● Low standby current of 50µA
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
(Ta=25ºC)
Power supply voltage
Breakdown voltage
Input voltage
Input voltage
(IA/A
, I
B/B standby)
Input current
(VS=12V, Ta=25ºC)
Diagnostic output withstand voltage
Operating temperature
Storage temperature
Power Dissipation
VS
VO
VIN
VIL
VIN = 0.4V
2.4
50
0.8
50
V
–0.8 mA
VVIH
IIL
VIN = 2.4V
IO = 1 A , Ta = 25ºC
µAIIH
Output saturation voltage
1.3 VVO.STA
IO = 1.5A, Ta = 25ºC
VO = 16V
IDIAG = 5 m A
VS = 12V
1.5
100
0.3
VVO.STA
Output leak current µAIO. LEAK
1.8Overcurrent detection AISD
27.5 Overvoltage detection VVSD
Saturation voltage of diagnostic
output
VVDIAG.L
Standby current µAISTB
IDIAG
IDIAG. H
Top
Tstg
PD
V
V
Without heatsink
V
mA
V
ºC
ºC
W
35
50
–0.3 to +7
Output current
Diagnostic output sink current
IO, AVE A1.5
10
7
–40 to +85
–40 to +150
3.5 (Ta=25ºC)
12 3
11•P2.54
±0.7=
27.94
±1.0
31.5 max
0.85
1.2±0.15
31.0±0.2
24.4±0.2
16.4±0.2
3.2±0.15
Ellipse 3.2±0.15 • 3.8
0.55 2.2±0.7
1.7±0.7
4.8±0.2
1.45±0.15
Pin 1 12
45678910 11 12
8.5max
9.5 min (10.4)
Lead plate thickness
resins
0.8max
9.9±0.2
13.0±0.2
16.0±0.2
2.7
+0.2
–0.1 +0.2
–0.1
a: Part No.
b: Lot No.
a
b
0
010 20 30
Power supply voltage VS (V)
20
10
0
200
At standby IS (µA)
Power supply current
At Constant IS (mA)
Constant (ST = 5V)
At standby (ST = 0V)
100
0102030
0
10
12
14
2
4
6
8
Output voltage VO (V)
Power supply voltage VS (V)
35
=
T 25ºC
a
V 12V
cc=
Common for
all phases
0 1.0 2.0 3.0
0
1.0
2.0
Saturation voltage of output transistor Vsat (V)
Output current IO (A)
Ta =25ºC
Common for
all phases
0.5
1.5
0
0
Output voltage VO (V)
Junction temperature Tj (ºC)
=
V 5V
ST
10
Vcc (Vs) =12V
110 120 130 140 150 160
j2
Tj1
T
14
12
2
4
6
8
57
■ Power Supply Current Characteristics ■ Overvoltage Protection Characteristics ■
Saturation Voltage of Output Transistor Characteristics
■ Thermal Protection Characteristics
Electrical Characteristics
Vcc (Vs) =16V
Stepper-motor Driver ICs SLA4708M
Standard Circuit Diagram
External Dimensions (unit: mm)
Features
● Low output saturation voltage (high-side: 1.5V max.; low-side: 0.8V max.)
● Built-in recovery diode
● Built-in standby function
●
Built-in overcurrent and thermal protection circuits and low voltage input shutoff function
● Built-in overload and disconnection detection function
2-ph Stepper-motor Driver ICs SPF7211
58
1.0
10.5±0.3
+0.1
–0.05
0.25+0.15
–0.05
Fin
thickness
2.5±0.2
17.28±0.2
7.5±0.2
2±0.2
15.58±0.2
1.27±0.25
24
112
13
0.4+0.15
–0.05
a
b
Parameter Symbol Unit RemarksRatings
Absolute Maximum Ratings
Recommended Operation Range
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
Main power supply voltage
Input voltage
Output current
Flag terminal withstand voltage
Flag terminal current
Detect voltage
Power dissipation
Junction temperature
Operating temperature
Storage temperature
Main power supply current
Low voltage protection operation voltage
UVLO hysteresis voltage
Output leak current
Output saturation voltage
Recovery diode forward voltage
Input voltage
Input terminal
Hysteresis voltage
Ph terminal Input current
Ixx, Set terminals
Input current
Detect voltage
Oscillation frequency
PWM frequency
Ct terminal threshold voltage
Ct terminal current
Overcurrent detection voltage
Open detection voltage
Flag terminal leak current
Flag terminal saturation voltage
Flag terminal current
Set terminal Pulse rate
Pulse number
OCP operation
Open operation
I/O propagation time
Thermal protection temperature
Thermal protection hysteresis
Thermal alarm temperature
Thermal alarm hysteresis
VBB
VIN
Io
IoPeak
VFlag
IFlag
VRs
PD
Tj
Top
Tstg
40
–0.3 to 15
±0.8
±1.0
7
3
–2 to 2
4.1
39
150
–40 to 110
–40 to 150
IBB
IBBS
VUVLO
VUVLOhys
IoleakL
IoleakH
VsatL
VsatH
VFL
VFH
VFGO
VIL
VIH
VIhys
IIL
IIH
IIL
IIH
VRs
Fosc
FPWM
VctL
VctH
Ictsink
Ictsouce
VocpL
VocpH
VocpL
VocpH
Vopen
IleakFlag
VFlagL
IFlag
Tpw
Tpws
Fclock
Pulse
tocp1
tocp2
tocp3
topen1
topen2
tonH1
toffH1
tonH2
toffH2
tonL1
toffL1
tonL2
toffL2
Tj
∆Tj
Talarm
∆Talarm
In ordinary operation (no load)
At sleep
VBB = 40V, Vo = 0V
VBB = Vo = 40V
Io = 0.5A
Io = 0.8A
Io = –0.5A
Io = –0.8A
Io = 0.5A
Io = –0.5A
Io = –0.5A
VIL = 0.8V
VIH = 2.0V
Ix0 = High, Ix1 = High
Ix0 = Low, Ix1 = High
Ix0 = High, Ix1 = Low
Ct = 2200pF±20%
Ct = 2200pF±20%
Out voltage
Out voltage
VBB = 5.5V
VBB = 5.5V
Sence voltage
VFlag = 7 V
IFlag = 1 m A
In ordinary operation
At sleep
Ct = 2200pF
In ordinary operation; Ct = 2200pF
At switching the phase
When Ixx shifts from L to H
In ordinary operation
When Ixx shifts from L to H
mA
µA
V
V
µA
µA
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
mV
mV
mV
kHz
kHz
V
V
µA
µA
V
V
V
V
mV
µA
V
mA
µS
µS
Hz
—
µS
µS
µS
µS
µS
µS
µS
µS
µS
µS
µS
µS
µS
°C
°C
°C
°C
0.5
0.5
700
450
70
48
24
0.5
1.5
720
–120
3.0
VBB–2.0
–60
24
256
5.0
10.0
10.0
5.0
5.0
1.5
1.5
2.0
0.5
20
130
20
3.5
–100
1.2
2.0
–5
–5
–30
660
420
40
28.8
14.4
1.5
VBB–2.5
1.0
VBB–2.3
10
100
17
2.5
5.0
5.0
2.5
2.5
100
100
100
100
150
120
50
50
4.5
100
0.5
0.8
1.2
1.5
1.2
1.3
0.8
5
5
50
740
480
90
72
36
4.2
VBB–1.7
1.85
VBB–1.5
10
0.5
3
31
10.0
20.0
20.0
10.0
10.0
140
V
V
A
V
mA
V
W
°C
°C
°C
VIN VBB
Tw 1mS
VFlag VBB
For Ta = 25°C
For Tc (Ttab) = 25°C
Note:
*1: The Ct terminal threshold voltage and current are the design values. Warranty is based on the oscillation frequency.
*2: Thermal protection and alarm temperatures are design values.
*1
Note: *1: With glass epoxy + copper foil board (size 5.0•7.4cm; t: glass epoxy = 1.6mm/copper foil = 18µm)
Parameter Symbol Unit RemarksRatings
Main power supply voltage
Input voltage
Output current
Flag terminal withstand voltage
Flag terminal current
Detect voltage
Operating temperature
VBB
VIN
Io
VFlag
IFlag
VRs
Top
6 to 18
–0.3 to 7.0
±0.5
0 to 7.0
0 to 1.0
–1 to 1
–40 to 110
V
V
A
V
mA
V
°C
VIN VBB
Continuous
VFlag VBB
*1
*2
µPC
(ECU)
Rs
Rs
Ct
2200pF +
VBB =6 to 18V
SPM
I20
I21
Ph2
FL1
GND
GND
GND
GND
Out2A
Rs2
FL2
Out2B
I10
I11
Ph1
Ct
Set
GND
GND
GND
Out1A
Rs1
VBB
Out1B
1
12 13
24
Rs 1Ω typ (1 to 2W)
IoM VRs/Rs
Excitation Signal Time Chart
2-phase excitation
1 to 2-phase excitation
Clock 0 1 2 3 0 1
Ph1 L H H L L H
I10, I11 H H H H H H
Ph2 L L H H L L
I20, I21 H H H H H H
Clock 0 1 2 3 4 5 6 7 0 1 2 3
Ph1 L H H H H L L L L H H H
I10, I11 H L H H H L H H H L H H
Ph2 L L L H H H H L L L L H
I20, I21 H H H L H H H L H H H L
* For the 1 to 2-phase excitation application, switch the Ph signal in the step of 1-ph
excitation (Ixx turns from high to low).
The OPEN detection function is invalid except in this sequence.
Flag response
time
Response pulse
width
a) Part No.
b) Lot No.
59
Electrical Characteristics
2-ph Stepper-motor Driver ICs SPF7211
–30 –10 10 5030 9070 110 130 150 –30 –10 10 5030 9070 110 130 150
0
Saturation voltage Vsat (V)
Junction temperature (ºC)
–30 –10 10 5030 9070 110 130 150
Junction temperature (ºC)
0.8
0.6
0.4
0.2
1.2
1
0255075100 125 150
0
Power dissipation PD (W)
Ambient temperature Ta (ºC)
20
10
40
30
0.5
Forward voltage VF (V)
Junction temperature (ºC)
1.7
1.5
1.3
1.1
0.9
0.7
55
49
53
51
45
47
Oscillation frequency FOSC (kHz)
Copper foil area
(5.0•7.4mm, t=18µm)
j-a 30.5°C/W
Infinite heatsink equivalent
(Tc=25°C)
j-tab 3.2°C/W
VsatH VFGO
VFH
VFL
VsatL
FOSC
Ct=2200pF
■ Vsat Temperature Characteristics (Io=0.5A) ■ Diode VF Characteristics (IF=0.5A)
■ Ta-PD Characteristics
■ OSC Temperature Characteristics
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbol
min typ max
Unit Conditions
Ratings
(Ta=25ºC)
Motor supply voltage
Input terminal voltage
PWM control frequency
Forward • reverse rotation switch frequency
Power dissipation
Input terminal voltage
Input terminal current
Motor supply voltage
Output saturation voltage
Static circuit current
DIAG output pulse width
DIAG terminal voltage
(Unless, otherwise specified, Tj=Tch=25°C, VM=14V, IO=3A)
Output leakage current
Junction and channel temperature
Operating temperature
Storage temperature
VM
IN1
IN2
PWM
fPWM
VIN
IO=3A
VM=40V
VM=40V
VIN1=VIN2=VPWM
Brake mode
VIN1=VIN2=VPWM
VIN1=VIN2=VPWM=0V
VIN1=VIN2=VPWM=5V
IO=10A
IO=3A
IO=10A
IO=3A
VPWM:
H L (Vth
=
2.5V typ)
Stop mode
Forward and reverse mode
C=1µF (typ)
ID• SINK=1mA
V
0.3
6 18
V
100 µA
100 µA
V
2.0 V
200
µA
22
1.0
0.8
1.0
0.8
22
16
0.3
µA
V
mA
mA
mA
ms
V
V, VO-PG
IO=3A
VM=24V (2 min.)
0.8 V
Output transmission time
Forward voltage
characteristic of diode
between drain and source
VPWM:
L H (Vth
=
2.5V typ)
3.0
–100
10
15
10
µs
µs
µs
V
V
V
tpLH
tpHL
tpHL-tpLH
VF•L
VF•H
IL, L
V, VM-VO
IL, H
VIN, H
VIN, L
IIN, L
IIN, H
OPC start current 16
20
AIOCP
IM1
IM2
IM3
tDIAG
VD•L
fCW
PD1
PD2
Tj, Tch
TOP
Tstg
V
V
V
V
Without heatsink
With infinite heatsink
Duty=20% to 80%
PW 1ms, Duty 50%
kHz
Hz
W
W
ºC
ºC
ºC
40
–0.3 to 7
–0.3 to 7
–0.3 to 7
20
500
Output current
IO
IO (p-p)
A
A
±5
±17
3.6
33.7
–40 to +150
–40 to +85
–40 to +150
Thermal resistance
j-c ºC/W 3.7
j-a ºC/W 35
Standard Connection Diagram
Equivalent Circuit
Timing Chart
External Dimensions (unit: mm)
Features
● P-ch MOS for high side and N-ch MOS for low side in one package
● Enable to drive DC±5V
● Possible to drive a motor at the LS-TTL, C-MOS Logic level
● Guarantee Tj=Tch=150°C
● Built-in over current protection and thermal shut down circuits
●
Built-in diagnosis function to monitor and signal the state of each protection circuits
● Built-in vertical current prevention circuits (Dead time is defined internally.)
● No insulator required for Sanken's original package (SPM package)
60
Full Bridge PWM Control DC Motor Driver ICs SI-5300
*
*2
*3
*1
*4
Note:
*1: The standard value of IOCP is assumed to be a value by which the output of each Power MOS FET cuts off. When the
protection circuit of OCP and TSD operates, Power MOS FETs keeps cutoff. When a signal (5V: H ➞ 0V: L) is input to the
terminal PWM, the cutoff operation will be released. Moreover, three minutes (Ta=25ºC, fPWM=10kHz, VM=14V) are assumed
to be max at the overcurrent state continuance time in the VM operation and the ground of output terminal (OUT1, OUT2).
It is not the one to assure the operation including reliability in the state that the short-circuit continues for a long time.
Output transmission
time tpHL is time from
Vth (2.5V typ) of the
terminal of PWM to
output (V
OUT
*0.1) of
the output terminal.
Output transmission
time tpLH is time from
Vth (2.5V typ) of the
terminal of PWM to
output (V
OUT
*0.9) of
the output terminal.
a: Part No.
b: Lot No.
0.75+0.2
–0.1
16.1±0.2
a
b
(28.4)
(4.5)
14•P2.03±0.1=(28.42)
35±0.3
123456789101112131415
0.45+0.2
–0.1
7.6±0.5
3.6±0.5 (4)
4.8±0.2
2.7±0.2
2±0.5
4.5±0.7
(R0.8)
(R0.8)
R-end
Protection circuit
VM=2V VM=2V
VM
VM-OUT1
(Pch1 VDS)
VOUT1-GND
(Nch1 VDS)
VOUT2-GND
(Nch2 VDS)
OUT1
OUT2
TDIAG
DIAG 20ms
(min)
DIAG Threminal
VCC=5V Pull-up
IOUT (A)
VM-OUT2
(Pch2 VDS)
IN1
IN2
PWM
Return to constant action
Therminal name
IN1
IN2
PWM
OUT1
GND
OUT2
IOUT (A)
Forward
Duty ON
Forward
Duty OFF
Reverse
Duty ON
Reverse
Duty OFF
Stop
(Free Run)
Stop
(Free Run)
High inpidance
High inpidance
High inpidance
M
VMVM
OUT1
OUT2
VM
IN1
IN2
PGND PGND
LGND
DIAG
TDIAG
CDIAG
1µF
ECU inside
VCC
PULL-UP
Resistor
PWM
Pre-Rec
TSD
B
B
BB
B
Pch1 Pch2
Nch1 Nch2
B
A
A
A
A
A
A
FF
QS
R
Dead
Time
Dead
Time
PWM
down
edge
sense
OCP OCP
DIAG
CONTROL
OCP OCP
SI-5300
14, 15
OUT2
1, 2
OUT1
3, 5, 13
VM
Relay
Battery
Capacitor
220µF
CPU
6 IN1
11 IN2
7 PWM
10 DIAG
9
TDIAG
VCC 8
LGND
4,12
PGND
Delay Capacitor
1µF
+
Pull-up Resistor
10kΩ
(Open Collector)
M
GND
Vth
VPWM (5V)
VOUT
VOUT*0.9
GND
tpLH
PWM terminal
OUT terminal
Vth
VPWM (5V)
VOUT *0.1
GND
GND
tpHL
PWM terminal
OUT terminal
*4: DIAG signal output terminal is an open collector output. Use a pull-up resistor when connecting it to a logic circuit.
*3: Output transmission time (tpHL)
*2: Output transmission time (tpLH)
Breake Breake
Note: * The dead time for the length current prevention in positive and the reversing switch is set by
internal control IC. The set point in internal IC at the dead time is 20µs (typical).
Please take into account the dead time and consider the load conditions when you use the IC.
Duty on
■ Output saturation voltage (Pch)
■ Quiescent circuit current
■ Output saturation voltage (Nch)
■ Voltage of input terminal (Threshold voltage)
■ VTDIAG – VDIAG Characteristics
■
Forward voltage of Diode between drain and source
■ Current of input terminal (SINK current)
■ Thermal shut down protection
■ Current of input terminal (Source current)
0
01234567
V•VM-VO (V)
1.0
0.8
0.6
0.4
0.2
01020 4030
IM (mA)
VM (V)
0
0
–2
–4
–6
–8
–10
–12
10 20 4030
IIN1
,
IIN2
,
PWM
source
(µA)
VM (V)
0
0
1
2
3
4
5
6
123456
VDIAG
(V)
VTDIAG (V)
100 125 150 175 200
1
2
3
4
5
6
0
VDIAG
(V)
Ta (ºC)
IO (A)
0
01234567
01234567
4
8
12
16
VIN1, IN2, PWM (V)
0
0
1234
0.1
0.2
0.3
0.4
0.5
0.6
567
ISINK (mA)
VIN1, IN2, PWM (V)
0
0
0.2 0.4 0.6 0.8 1.0 1.2
2
4
6
8
12
10
IFSD (A)
VFSD (V)
0
0.1
0.2
0.3
0.4
0.5
IO (A)
V•VO-PG (V)VO (V)
VM=14V
Ta=25ºC
VM=14V
VM=14V
Ta=150ºC
Ta=85ºC
Ta=25ºC
Ta=–40ºC
Ta=150ºC
Ta=85ºC
Ta=25ºC
Ta=–40ºC
Ta=150ºC
Ta=85ºC
Ta=25ºC
Ta=–40ºC
Nch
MOS FET
Pch
MOS FET
VM=14V
Ta=150ºC
Ta=25ºC
Ta=–40ºC
Ta=150ºC
Ta=25ºC
Ta=–40ºC Ta=150ºC
Ta=25ºC
Ta=–40ºC
IIN1=IIN2=PWM=0V VM=10V
IO=0A
VM=14V
Electrical Characteristics
61
Pull-up resistance =3kΩ
0
5
10
15
20
25
IO=0A
Ta=25ºC
Brake
Duty off
Stop
Full Bridge PWM Control DC Motor Driver ICs SI-5300
■ Pch MOS FET Safe Operating Area (SOA) ■ Nch MOS FET Safe Operating Area (SOA)
21040100
0.3
1
10
100
0.3
1
10
100
IOUT (A)
IOUT (A)
VM-OUT (V)
21040100
VOUT -PG (V)
■ PD—Ta Characteristics
–40 –30 0 25 50 75 100
0
5
10
15
20
25
30
35
40
Allowable Power Dissipation PD (W)
Ambient temperature Ta (ºC)
Tc=25ºC
Infinite heatsink (Tc =25ºC)
No heatsink
1ms
10ms
100ms
Tc=25ºC
1ms
10ms
100ms
Standard Circuit Diagram
External Dimensions (unit: mm)
Features
● A DMOS of low ON resistance (0.1Ω typ) is mounted on the high and low side
power elements
● Two input signals control the forward/reverse/brake of a DC motor
● Current limit and overcurrent protection circuits
● Low voltage and thermal protection, excess input detecting output and input
terminal open protection
Full Bridge DC Motor Driver ICs SPF7301(under development)
62
Parameter Symbol Unit RemarksRatings
Absolute Maximum Ratings
Recommended Operation Range
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
Main power supply voltage
Input terminal input voltage
EN terminal voltage
Disable terminal input voltage
Output current
DIAG output current
DIAG inflow current
Power dissipation
Junction temperature
Operating temperature
Storage temperature
Main power supply current
UVLO hysteresis voltage
Output terminal leak current
Output DMOS RDS (ON)
OPC start current
DI terminal voltage
DI terminal current
EN terminal input voltage
EN terminal input current
DIAG terminal output voltage
DIAG terminal output current
DIAG terminal leak current
Input delay time
Overvoltage protection operation voltage
OVP hysteresis width
Thermal protection starting temperature
Thermal protection hysteresis width
VB
VIN1,VIN2
VEN
VDI
Io
IoPeak
VDIAG
IDIAG
PD1
PD2
Tj
Top
Tstg
j-c
j-a
–0.3 to 36
–0.3 to 6
–0.3 to 12
–0.3 to 6
±7
±15
–0.3 to 6
–3
39
4
–40 to 150
–40 to 105
–40 to 150
3.2
31
IBB1
IBB2
VuvloH
VuvloL
∆UVLO
IleakHS
IleakLS
RDS(ON)_1H
RDS(ON)_2H
RDS(ON)_1L
RDS(ON)_2L
VF_H1
VF_H2
VF_L1
VF_L2
Iocp1_H1
Iocp1_H2
Iocp1_L1
Iocp1_L2
Iocp2_H1
Iocp2_H2
Iocp2_L1
Iocp2_L2
VINxH
VINxL
IINxH
IINxL
VDIxH
VDIxL
IDIxH
IDIxL
VENth
IENH
IENL
VDIAG
IDIAG
IDIAGL
TdON
TdOFF
Tr
Tf
Tddis
VOVP
∆VOVP
Ttsd_ON
∆Ttsd
For VEN = 0 V
Io1 = 1 A
Io2 = 1 A
Io1 = –1A
Io2 = –1A
VDI = 5 V
VDI = 0 V
VDI = 5 V
VDI = 0 V
VEN = 5 V
VEN = 0 V
IDIAG = 0.5mA
For VDIAG = 1.6V
Time from V
INx
H to Voutx• 0.2
Time from V
INx
L to Voutx• 0.8
Time of Voutx from 20% to 80%
Time of Voutx from 80% to 20%
Time from DIthH to Vout
x•0
.2
mA
µA
V
V
V
µA
µA
mΩ
mΩ
mΩ
mΩ
V
V
V
V
A
A
A
A
A
A
A
A
V
V
µA
µA
V
V
µA
µA
V
µA
µA
V
mA
µA
µS
µS
µS
µS
µS
V
V
°C
°C
15
0.5
100
100
100
100
1.5
1.5
1.5
1.5
7
7
7
7
15
15
15
15
40
5
165
15
5.0
4.5
–100
4.5
4.5
4.5
4.5
2
–100
–100
2
–100
–100
0.8
–10
1.5
–10
35
151
100
7.0
6.5
100
200
200
200
200
10
10
10
10
0.8
0.8
4
100
10
0.8
15
20
15
6
6
4
45
V
V
V
V
A
A
V
mA
W
W
°C
°C
°C
°C/W
°C/W
1kHz, Duty 1%, Pulse 10µS
DIAG terminal sink current
With an infinite heatsink mounted
*1
Note: *1: With glass epoxy + copper foil board (size 5.0 • 7.4cm; t: glass epoxy = 1.6mm /copper foil = 18µm)
Note:
*2: For the electrical characteristics for Tj = –40 to 150°C, the design warranty applies to the above specification values.
*3: Thermal protection starting temperature is 165°C (typ) by design. The above parameters are the design specifications.
Parameter Symbol Unit RemarksRatings
Main power supply voltage
DI terminal input voltage
Input terminal input voltage
Output current
DIAG terminal voltage
Operating temperature
VB
VDI
VINx
Io
VDIAG
Top
8 to 18
–0.3 to 5.3
–0.3 to 5.3
±1
–0.3 to 5.3
–40 to 105
V
V
V
A
V
°C
*2
*3
*3
(Ta=25ºC)
(Tj = 30 to 125°C, V
B
= 14V, EN = DI = 5V, Ccp = 33nF,
R
DIAG
= 20kΩ unless otherwise specified)
VB
Full Brige Driver IC
IN1
IN2
R1
Cin
Power
supply
R2 RDI PGND LGND
OUT2
OUT1
DI
DIAG
RDIAG
M
Ccp
Vcc
EN CP
SFP7301
* Recommended connection parts
Pressure rise capacitor for charge pump circuits (CP to GND) Cp 33nF
DIAG terminal pull-up resistance RDIAG: 20kΩ
Input terminal pull-down resistance R1, R2, RDI: 10kΩ
10.5±0.3
1.0 +0.1
–0.05
Fin
thickness
14.74±0.2
13.04±0.2
1.27±0.25 0.4
20 11
110
+0.15
–0.05 0.25+0.15
–0.05
2.5±0.2
7.5±0.2
2±0.2
a
b
Thermal resistance
(junction to case)
Thermal resistance
(junction to ambient air)
Low voltage protection
operation voltage
Forward voltage
characteristics between
output DMOS and DS
Overcurrent limiting
operation current
Input terminal voltage
VIN1, VIN2
Input terminal current
VIN1, VIN2
a) Part No.
b) Lot No.
63
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
Power MOS FET output
leakage voltage
High-side Power MOS FET
output on-state voltage
Power MOS FET output
breakdown voltage
Delay time
BVOUT
IO=0.4A, VIN=10V
VO=500V
IO=100µA
IO=2A, VIN=10V
VCC=10V, VM=400V
VCC=4.5 to 15V
VCC=10A, VIN=10V,
VM=85A,
IO=0.41A
VCC=4.5 to 15V
V500
0.28 0.4
1.4 2.0
100 µA
0.52
2.6
V
V
4.0 mA
0.8VCC V
1.4
V
µs
0.2VCC
V
IOUT (off)
V
OUT (on)
1
V
OUT (on)
2
Low-side Power MOS FET
output on-state voltage
IO=0.4A, VGL=10V
IO=2A, VGL=10V
0.28 0.4
1.4 2.0
0.52
2.6
V
V
V
OUT (on)
1
V
OUT (on)
2
Quiescent circuit current
VCC=4.5 to 15V
VCC=10V, VM=400V
3.0
4.0
mA
mA
ICC 1
ICC 2
ICC 3
VIH
VIL
td (on)
3.3 µstd (off)
–40 to +105ºC
2.5
15
µs∆t
VCC
Input voltage (Low level)
Operating voltage
Operating circuit current
Input voltage (High level)
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Power source voltage
Input voltage
Output voltage
Output current
Power dissipation
Storage temperature
Operation temperature
VM
VIN
VO
IO
PD
Tstg
Topr
V
V
V
A
W
ºC
ºC
500
15
500
15
5 (Ta=25ºC)
–40 to +125
–40 to +105
*
Block Diagram
Timing Chart
External Dimensions (unit: mm)
64
Features
● One Package Full Bridge Driver Consisted of High Voltage IC and Power
MOS FETs (4 pieces)
● High Voltage Driver which accepts direct connection to the input signal line
● External components such as high voltage diodes and capacitors are not required
High Voltage Full Bridge Drive ICs SLA2402M
* Power GND (D terminal) to -HV (-HV terminal) voltage.
*
31.0±0.2
4.8±0.2
1.7±0.1
24.4±0.2
16.4±0.2
16.0±0.2
2.45±0.2
9.9±0.2
13.0±0.2
2.7
Ellipse 3.2±0.15 •3.8
3.2±0.15
17• P1.68±0.1=28.56
8.5 max
31.5 max
9.5 min
Lead plate thickness
resins
0.8max
0.65 +0.2
–0.1 +0.2
–0.1
+0.2
–0.1
1.0
0.55
4
2
36810 911
13 16
17
15
7+12V
OUT1 OUT2
GL1 GL2
HO2
LO2
HO1
MIC
CPU
VCC
VIN1V
IN2–HV
LO1
D1 MOSQ1 MOSQ2
MOSQ'1 MOSQ'2
L GND
*Dotted Line: Outside Connection
VCC
IN1
IN2
HO1
HO2
LO2
LO1
OUT2-GND
—HV 0V
–400V
–100V
OSC 400HzIgnition
VIN1
0V
0V
10%
10% 10%
10%
VOUT1
td (on) td (on)
10%
10% 10%
10%
VIN1
0V
0V
VOUT2
td (on) td (on)
Highside switch turn-on, turn-off Lowside switch turn-on, turn-off
* About delay time
Signal input waveform vs output waveform
* ∆t: ∆t=td (on) – td (off)
Measurement Circuit
VIN1
VIN2
VM
VOUT1V
OUT2
VIN2
VIN1
RL
Conditions
VCC=10V, VIN=10V (pulse)
VM=85V
IO=0.41A (RL=207Ω)
*
Without heatsink
PW 250µs
a: Part No.
b: Lot No.
1 2
a
b
When pulse signal is inputted to VlN1,
RL on solid line is ON and dotted line
RL is off.
On the contrary, when pulse signal is
inputted to VlN2, RL on dotted line is
ON and dotted line RL is off.
■ Quiescent circuit current
■ Quiescent circuit current supplied high voltage
■
Quiescent circuit current supplied high voltage
■ Quiescent circuit current
■ Operating circuit current
■ Operating circuit current
0
0
5101520
0.5
1.0
1.5
2.0
2.5
3.0
Quiescent circuit current ICC1 (mA)
Operation voltage VCC (V)
–40ºC
VIN=0V
0
0
5101520
1
2
3
4
5
Quiescent circuit current ICC2 (mA)
Operation voltage VCC (V)
150ºC
105ºC
25ºC
150ºC
105ºC
25ºC
–40ºC
0
0
12 3 4
2
4
6
8
10
0
2
4
6
8
10
1
0
2
3
4
5
6
7
8
Output on-state voltage (V)
Output current (A) Ambient temperature (ºC) Input voltage VIN (V)
–50
0
050100 150 –50 0 50 100 150
–50 0 50 100 150
0
2
4
6
8
10
051015
1
2
3
4
5
Output on-state voltage (V)
Gate drive voltage VGL (V)
Gate drive voltage VGL (V)
Input threshold voltage VIH, VIL (V)
Ambient temperature (ºC) Ambient temperature (ºC)
VIN=0V
VM=400V
0
0
100 200 300 500400
0.5
1.0
1.5
2.0
2.5
3.0
Quiescent circuit current ICC2 (mA)
High voltage VM (V)
150ºC
105ºC
25ºC
–40ºC
VIN=0V
VCC=10V
0
0
100 200 300 500400
0.5
1.0
1.5
2.0
2.5
3.0
Quiescent circuit current ICC2 (mA)
High voltage VM (V)
VCC=
15V
12V
10V
4.5V
9V
Ta=25ºC
Ta=25ºC
0
0
100 200 300 500400
0.5
1.0
1.5
2.0
2.5
3.5
■ Gate drive voltage
■ Input threshold voltage
■ Output on-state voltage
■ Output on-state voltage
■ Gate drive voltage
3.0
Operating circuit current ICC3 (mA)
High voltage VM (V)
VCC=
15V
12V
10V
4.5V
9V
Ta=25ºC
0
0
100 200 300 400 500
0.5
1.0
1.5
2.0
2.5
3.0
Operating circuit current ICC3 (mA)
High voltage VM (V)
150ºC
105ºC
25ºC
–40ºC
VCC=VIN1(2)=10V
VCC=10V
VCC=15V
VCC=
4.5V
VCC=9V
VCC=10V
IO=2A
IO=0.4A
VIH
VIL
VCC=VIN=10V
VCC=VIN=10V
150ºC
105ºC
25ºC
–40ºC
Electrical Characteristics
65
High Voltage Full Bridge Drive ICs SLA2402M
■ High side switch turn-on, off
■ High side switch turn-on, off
■ Low side switch turn-on, off
■ Low side switch turn-on, off
■ Power derating curve
■ Transient thermal resistance characteristics ■ Safe operating area (Power MOS FET)
46810121416
0
1.0
2.0
3.0
4.0
5.0
turn-on, off (µs)
Operation voltage VCC (V)
turn-on
turn-off
46810121416
0
1.0
2.0
3.0
4.0
5.0
turn-on, off (µs)
Operation voltage VCC (V)
turn-on
turn-off
Ta=25ºC
VM=85V, IO=0.41A
–50 0 50 100 150
0
1.0
2.0
3.0
4.0
5.0
turn-on, off (µs)
Ambient temperature (ºC)
turn-on
turn-off
VM=85V, IO=0.41A
VCC=10V
–50 0 50 100 150
0
1.0
2.0
3.0
4.0
5.0
turn-on, off (µs)
Ambient temperature (ºC)
turn-on
–50 0 50 100 150
0
2
1
3
4
5
6
Power dissipation (W)
Ambient temperature (ºC)
turn-off
VM=85V, IO=0.41A
VCC=10V
Ta=25ºC
VM=85V, IO=0.41A
0.0001 0.001
0.01 0.1 1 10 100
0.001
0.01
0.1
1
10
100
Transient thermal resistance
(º
C/W
)
Power time (s)
Ta=25ºC
Single pulse
10 1000100
0.01
0.1
1
10
100
Drain current
(A)
Drain to source voltage (V)
Ta=25ºC
Single pulse
RDS (on)
limited
1ms
10ms
100µs
without heatsink
66
Electrical Characteristics
High Voltage Full Bridge Drive ICs SLA2402M
67
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
Power MOS FET output
leakage voltage
High-side Power MOS FET
output on-state voltage
Power MOS FET output
breakdown voltage
Delay time
BVOUT
IO=0.4A, VIN=10V
VO=500V
IO=100µA
VCC=10V, VM=400V
VCC=6 to 15V
VCC=10A, VIN=10V,
VM=85V, IO=0.41A
VCC=6 to 15V
V500
0.18 0.26
100 µA
0.34 V
4.0 mA
0.8VCC V
2.0
V
µs
0.2VCC
6 V
IOUT (off)
VOUT (on)
Lowside Power MOS FET
output on-state voltage IO=0.4A, VGL=10V
0.18 0.26 0.34 VVOUT (on)
Quiescent circuit current
VCC=6 to 15V
VCC=10V, VM=400V
3.0
4.0
mA
mA
ICC 1
ICC 2
ICC 3
VIH
VIL
td (on)
3.0 µstd (off)
–40 to +125ºC
15
VCC
Input voltage (Low level)
Operating voltage
Operating circuit current
Input voltage (High level)
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Power source voltage
Input voltage
Output voltage
Output current
Power dissipation
Storage temperature
Operation temperature
VM
VIN
VO
IO
PD
Tstg
Topr
V
V
V
A
W
A
W
Tc=25ºC
Without heatsink
With infinite heatsink
ºC
ºC
500
15
500
7
IO (peak) 15
5 (Ta=25ºC)
40 (Tc=25ºC)
–40 to +125
–40 to +125
Junction temperature Tj ºC150
*
68
Features
● One Package Full Bridge Driver Consisted of High Voltage IC and Power
MOS FETs (4 pieces)
● High Voltage Driver which accepts direct connection to the input signal line
● External components such as high voltage diodes and capacitors are not required
High Voltage Full Bridge Drive ICs SLA2403M
* Power GND (D terminal) to -HV (-HV terminal) voltage.
*
Block Diagram
*Dotted Line: Outside Connection
4
3
5
26 8 10 911 13 17
14
16
15
D2
7
OUT1 OUT2
GL1 GL2
HO2
LO2
HO1
MIC
CPU
VCC
VIN1V
IN2–HV
LO1
D1 MOSQ1 MOSQ2
MOSQ'1 MOSQ'2
L GND
VIN1
0V
0V
10%
10% 10%
10%
VOUT1
td (on) td (on)
10%
10% 10%
10%
VIN1
0V
0V
VOUT2
td (on) td (on)
Highside switch turn-on, turn-off Lowside switch turn-on, turn-off
* About delay time
Signal input waveform vs output waveform
* ∆t: ∆t=td (on) – td (off)
Measurement Circuit
VIN1
VIN2
VM
VOUT1V
OUT2
VIN2
VIN1
RL
Conditions
VCC=10V, VIN=10V (pulse)
VM=85V
IO=0.41A (RL=207Ω)
1 2
External Dimensions (unit: mm)
31.0±0.2
4.8±0.2
1.7±0.1
24.4±0.2
16.4±0.2
16.0±0.2
2.45±0.2
9.9±0.2
13.0±0.2
2.7
Ellipse 3.2±0.15 •3.8
3.2±0.15
17• P1.68±0.1=28.56
8.5 max
31.5 max
9.5 min
Lead plate thickness
resins
0.8max
0.65 +0.2
–0.1 +0.2
–0.1
+0.2
–0.1
1.0
0.55
Timing Chart
VCC
IN1
IN2
HO1
HO2
LO2
LO1
OUT2-GND
—HV 0V
–400V
–100V
OSC 400HzIgnition
a: Part No.
b: Lot No.
a
b
PW 250µs
* When pulse signal is inputted to VlN1,
RL on solid line is ON and dotted line
RL is off.
On the contrary, when pulse signal is
inputted to VlN2, RL on dotted line is
ON and dotted line RL is off.
■ Quiescent circuit current
■ Quiescent circuit current supplied high voltage
■ Quiescent circuit current supplied high voltage
■ Quiescent circuit current supplied high voltage
■ Operating circuit current
■ Operating circuit current
0
0
5101520
0.5
1.0
1.5
2.0
2.5
3.0
Quiescent circuit current ICC1 (mA)
Operation voltage VCC (V)
0
0
5101520
1
2
3
4
5
Quiescent circuit current ICC2 (mA)
Operation voltage VCC (V)
0
0
12 3 4
1
2
3
4
6
5
0
2
4
6
8
10
1
0
2
3
4
5
6
7
Output on-state voltage VOUT (ON) (V)
Output current IOUT (A) Ambient temperature (ºC) Input voltage VIN (V)
–50
0
050100 150 –50 0 50 100 150
–50 0 50 100 200150
0
2
4
6
8
10
051015
1
2
3
4
Output on-state voltage VOUT (ON) (V)
Input threshold voltage VIH (V)
Gate drive voltage VGL
(V)
Input threshold voltage VIL (V)
Ambient temperature (ºC) Ambient temperature (ºC)
0
0
100 200 300 500400
0.5
1.0
1.5
2.0
2.5
3.0
Quiescent circuit current ICC2 (mA)
High voltage VM (V)
0
0
100 200 300 500400
0.5
1.0
1.5
2.0
2.5
3.5
3.0
Quiescent circuit current ICC2 (mA)
High voltage VM (V)
0
0
100 200 300 500400
0.5
1.0
1.5
2.0
2.5
4.0
3.5
■ Input threshold voltage
■ Input threshold voltage
0
2
4
6
10
8
–50 0 50 100 150
Gate drive voltage VGL (V)
Ambient temperature (ºC)
■ Gate drive voltage
■ Output on-state voltage
■ Output on-state voltage
■ Gate drive voltage
3.0
0
0.5
1.0
1.5
2.0
2.5
4.0
3.5
3.0
Operating circuit current ICC3 (mA)
High voltage VM (V)
0 100 200 300 400 500
Operating circuit current ICC3 (mA)
High voltage VM (V)
VIN=0V
150ºC
125ºC
25ºC
85ºC
–40ºC
VIN=0V
VM=400V
150ºC
85ºC
125ºC
25ºC
–40ºC
VIN=0V
VCC=10V
Ta=25ºC
Ta=25ºC
Ta=25ºC
150ºC
125ºC
25ºC
85ºC
–40ºC
VCC=VIN1(2)=10V
VCC=15V
VCC=
6V
VCC=10V
VCC=VIN=10V
VCC=VIN=10V
–40ºC
150ºC
125ºC
25ºC
85ºC
VCC=
15V
12V
10V
6V
9V
VCC=
15V
10V
12V
6V
9V
IO=2A
IO=0.4A
150ºC
125ºC
85ºC
25ºC
–40ºC
VCC=10V
VCC=6V
VCC=10V
VCC=6V
VCC=10V
VCC=6V
Electrical Characteristics
69
High Voltage Full Bridge Drive ICs SLA2403M
■ High side switch turn-on, off
■ High side switch turn-on, off
■ Low side switch turn-on, off
■ Low side switch turn-on, off
■ Power derating curve
■ Transient thermal resistance characteristics ■ Safe operating area (Power MOS FET)
468101214
0
1.0
2.0
3.0
4.0
5.0
turn-on, off (µs)
Operation voltage VCC (V)
468101214
0
1.0
2.0
3.0
4.0
5.0
turn-on, off (µs)
Operation voltage VCC (V)
–50 0 50 100 150
0
1.0
2.0
3.0
4.0
5.0
turn-on, off (µs)
Ambient temperature (ºC)
–50 0 50 100 150
0
1.0
2.0
3.0
4.0
5.0
turn-on, off (µs)
Ambient temperature (ºC)
–50 0 50 100 150
0
10
20
30
40
50
Power derating PD (W)
Ambient temperature (ºC)
0.001 0.01 0.1 1 10 100
0.001
0.01
0.1
1
10
100
Transient thermal resistance
(º
C/W
)
Power time (s)
10 1000100
0.01
0.1
1
10
100
Drain current
(A)
Drain to source voltage (V)
Ta=25ºC
Single pulse
Tc=25ºC
Ta=25ºC
Single pulse
without heatsink
turn-on
turn-off
VM=85V, IO=0.41A
VCC=10V
turn-on
turn-off
VM=85V, IO=0.41A
VCC=10V
turn-on
turn-off
Ta=25ºC
VM=85V, IO=0.41A
turn-on
turn-off
Ta=25ºC
VM=85V, IO=0.41A
1ms
10ms
100µs
10µs
RDS (on)
limited
70
Electrical Characteristics
High Voltage Full Bridge Drive ICs SLA2403M
71
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
IGBT output breakdown voltage
IGBT output leak current
IGBT output ON voltage
Quiescent circuit current
Operating circuit current
Input threshold voltage
Low-side IGBT gate drive voltage
Delay time*
Operating voltage
BVOUT
IOUT (off)
VOUT (on)
Icc1
Icc2
Icc3
VIH
VIL
VGL
td (on)
td (off)
td (on)
td (off)
∆td
Vcc
Io = 100µA, Tj = 25°C
Vo = 500V
Io = 0.4A, VIN (or VGL) = 10V
Io = 2.0A, VIN (or VGL) = 10V
Vcc = 10V, VM = V IN = 0 V
Vcc = 10V, VM = 400V, VIN = 0 V
Vcc = 10V, V
M
= 400V, V
IN1
(or V
IN2
) = 10V
Vcc = 9 to 15V
Vcc = 9 to 15V
∆td = H/S td (off) - L/S td (on)
or L/S td (off) - H/S td (on)
Ta = –40 to +105°C
V
µA
V
V
mA
mA
mA
V
V
V
µs
µs
µs
µs
µs
V
570
0.8•Vcc
0.8•Vcc
0.6
1.8
0.8
1.3
9
1.0
1.3
0.7
2.2
0.9
1.6
100
1.2
1.8
3.0
4.0
4.0
0.2•Vcc
16
0.8
2.6
1.0
1.9
2.5
15
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Power supply voltage
Input voltage
Operation voltage
Output voltage
Output current (DC)
Output current (pulses)
Power dissipation
Thermal resistance
Operating temperature
Storage temperature
Junction temperature
IGBT single pulse
avalanche resistance
ESD protection
VM
VIN
Vcc
Vo
Io(DC)
Io(pulse)
PD
j-a
j-c
Topr
Tstg
Tj
EAS
ESD
V
V
V
V
A
A
W
°CW
°C
°C
°C
mJ
kV
Power GNG to HV
Single pulse (PW = 50µs max.)
Tc = 25°C
Tc = 25°C
VDD
= 30V, L = 1mH, Unclamped, Ic = 3.2A
Human body model (C
=
100pF, R
=
1.5kΩ)
500
15
15
500
7
15
4
20
31.2
6.2
–40 to +105
–40 to +150
150
5
±2
72
Features
● One Package Full Bridge Driver Consisted of High Voltage IC and Power
IGBT (4 pieces)
● High Voltage Driver which accepts direct connection to the input signal line
High Voltage Full Bridge Drive ICs SMA2409M
Block Diagram
Timing Chart
External Dimensions (unit: mm)
*Dotted Line: Outside Connection
(Ta = 25°C)
(Ta = 25°C)
Recommended Operation Range
High side
Low side
Parameter Symbol min typ max Unit Conditions
Ratings
Dead time tdTa = –40 to +105°Cµs5.0
6
4VCC
D1 D2
2
OUT1 OUT2
35 79 81011 13
14
12
IGBT Q1 IGBT Q2
IGBT Q'1
GL1
IGBT Q'2
GL2
HO1 HO2
LO2
LO1 MIC
VIN1 VIN2–HV L GND
CPU
A Drive Example
VCC
OSC250Hz
IN1
IN2
LO1
LO2
–HV–GND
OUT1–GND
OUT2–GND
0V
0V
0V
–400V
–85V
–85V
–85V
–400V
–400V
Ignition
31.3±0.2
a
b
31.0±0.2 4.0±0.2
14•P2.03±0.1
= (
28.42)
10.2±0.2
2.7±0.2
(10.4)
0.55 1.2±0.2
0.65+0.2
–0.1
+0.2
–0.1
1.16
+0.2
–0.1
123456789101112131415
a: Part No.
b: Lot No.
Vout2
VIN1
0V
0V
10% 10%
10% 10%
VIN1
Vout1
0V
0V
10% 10%
10%
10%
td(on) td(off)
VIN1
VIN2
VIN1
RL
VIN2
VOUT1V
OUT2
VM = 85V, Io = 0.41A
Vcc = 10V
VIN = 10V (Out Stage = ON)
VIN = 0V (Out Stage = OFF)
Highside switch turn-on, turn-off Lowside switch turn-on, turn-off
* About delay time
Signal input waveform vs output waveform
Measurement Circuit Conditions
VCC=10V, VIN=10V (pulse)
VM=85V
IO=0.41A (RL=206Ω)
1 2
* When pulse signal is inputted to VlN1,
RL on solid line is ON and dotted line
RL is off.
On the contrary, when pulse signal is
inputted to VlN2, RL on dotted line is
ON and dotted line RL is off.
(root dimensions) (root dimensions)
73
0
0
5101520
0.5
1.0
1.5
2.0
2.5
3.5
3.0
0
0
5101520
1
2
3
4
5
0
0.5
12 3 4
1.0
1.5
2.0
0
2
4
6
8
10
1
0
2
3
4
5
6
8
7
–50
0.6
050100 150 –50 0 50 100 200150
–50 0 50 100 200150
0
2
4
6
8
14
12
10
051015
0.8
1.2
1.6
1.0
1.4
1.8
2.0
0
0
100 200 300 500400
0.5
1.0
1.5
2.0
3.0
2.5
4.0
3.5
0
0
100 200 300 500400
0.5
1.0
1.5
2.0
2.5
3.5
3.0
0
0
100 200 300 500400
0.5
1.0
1.5
2.0
2.5
3.5
0
2
4
6
14
12
10
8
–50 0 50 100 150
3.0
0
0.5
1.0
1.5
2.0
2.5
3.5
3.0
0 100 200 300 400 500
VIN=0V
150ºC
125ºC
25ºC
–40ºC
VIN=0V
VM=400V
150ºC
105ºC
25ºC
–40ºC
VIN=0V
VCC=10V
Ta=25ºC
Ta=25ºC
Ta=25ºC
150ºC
105ºC
25ºC
–40ºC
VCC=VIN1(2)=10V
VCC=15V
VCC=9V
VCC=VIN=10V
VCC=VIN=10V
–40ºC
150ºC
105ºC
25ºC
VCC=
15V
12V
10V
6V
4.5V
9V
VCC=
15V
10V
12V
6V
4.5V
9V
IO=2A
IO=0.4A
150ºC
105ºC
25ºC
–40ºC
VCC=15V
VCC=9V
VCC=15V
VCC=9V
VCC=15V
VCC=9V
Electrical Characteristics
High Voltage Full Bridge Drive ICs SMA2409M
■ Quiescent circuit current
■ Quiescent circuit current supplied high voltage
■ Quiescent circuit current supplied high voltage
■ Quiescent circuit current supplied high voltage
■ Operating circuit current
■ Operating circuit current
Quiescent circuit current ICC1 (mA)
Operation voltage VCC (V)
Quiescent circuit current ICC2 (mA)
Operation voltage VCC (V)
Output on-state voltage VOUT (ON) (V)
Output current IOUT (A) Ambient temperature (ºC) Input voltage VIN (V)
Output on-state voltage VOUT (ON) (V)
Input threshold voltage VIH (V)
Gate drive voltage VGL
(V)
Input threshold voltage VIL (V)
Ambient temperature (ºC) Ambient temperature (ºC)
Quiescent circuit current ICC2 (mA)
High voltage VM (V)
Quiescent circuit current ICC2 (mA)
High voltage VM (V)
■ Input threshold voltage
■ Input threshold voltage
Gate drive voltage VGL (V)
Ambient temperature (ºC)
■ Gate drive voltage
■ Output on-state voltage
■ Output on-state voltage
■ Gate drive voltage
Operating circuit current ICC3 (mA)
High voltage VM (V)
Operating circuit current ICC3 (mA)
High voltage VM (V)
791113 15
0
0.5
1.0
1.5
2.0
2.5
3.0
791113 15
0
0.5
1.0
1.5
2.0
–50 0 50 100 150
0
0.5
1.0
1.5
2.5
2.0
3.5
3.0
–50 0 50 100 150
0
0.5
1.0
1.5
2.0
2.5
–50 0 50 100 150
0
1
2
3
4
5
0.001 0.01 0.1 1 10 100
0.01
0.1
1
10
100
10 1000100
0.1
1
10
100
Collector current
(A)
Ta = 25°C
Single pulse
without heatsink
td (on)
td (off)
td (on)
td (off)
td (on)
td (off)
1ms
10ms
100µs
74
Electrical Characteristics
td (on)
td (off)
High Voltage Full Bridge Drive ICs SMA2409M
■ High side switch turn-on, off
■ High side switch turn-on, off
■ Low side switch turn-on, off
■ Low side switch turn-on, off
■ Power derating curve
■ Transient thermal resistance characteristics ■ IGBT ASO characteristics
turn-on, off (µs)
Operation voltage VCC (V)
turn-on, off (µs)
Operation voltage VCC (V)
turn-on, off (µs)
Ambient temperature (ºC)
turn-on, off (µs)
Ambient temperature (ºC)
Power derating PD (W)
Ambient temperature (ºC)
Transient thermal resistance
(º
C/W
)
Power time (s) Collector-emitter voltage (V)
75
Custom ICs
76
■ Various processing technologies of BIP, BiCMOS, CMOS and BCD can be used for the semiconductor chips.
■ Meets detailed user needs, especially power ICs. A wide range of general-purpose ICs is also available.
■ Employs a monolithic chip with flip-chip construction for increased reliability making it ideal for car electronic
devices.
■ Also available in hybrid ICs with transfer mold construction, multi-chip IC configuration and power monolithic
IC configuration.
Features
● All semiconductor chips used are
manufactured by Sanken.
● Main product lineup consists of
power ICs produced out of many
years' experience of Sanken.
● Uses monolithic chips with flip-chip
construction.
● Mainly available in miniature
transfer-mold packages.
Examples of Custom Hybrid IC
Products
● Regulators for alternators
● Igniters
● Power supply for microcomputer
system
● Power steering control IC
● Motor and actuator driver
● Others
Lead frame type
multi-chip power IC
●
One-chip power IC
Surface-mount
power IC
Lead frame type
power hybrid IC with
ceramic substrate
●
High-output high-breakdown voltage IC
●
Simplified integration of custom circuits
●
Distribution of unit functions
(Actuators may be built in the device)
Examples of Sanken Automotive Hybrid ICs
External Dimensions (unit: mm)
77
STA 10pin
25.25
9.0
4.0
31.0
10.2
4.0 4.0
31.0
10.2
SMA15pinSMA12pin
3GR-F 3GR-M STR-S
SLA12pin
SPM SMD16pin SPF16pin
SPF24pinSPF20pin
SLA15pin
SLA18pin
15.6
23
5.5 19.8 5.5
23
24.2 5.5
23
31.0 4.8
16
31.0 4.8
16.0
35
16.1
4.8
20.0
9.8
6.8
16
Pin 1 8
9
4.0
12.05
7.5
10.5
2.5
16 15 14 13 12 11 10 9
12345678
17.28
2.5 7.5
10.6
24
112
13
31.0 4.8
16.0
MT-100 FM205
5.0 10.0
16.9
4.2
15.6
19.9
20.2 4.0
9.0
STA 8pin
1.0
10.5±0.3
+0.1
–0.05
0.25+0.15
–0.05
2.5±0.2
14.74±0.2
7.5±0.2
2±0.2
13.04±0.2
1.27±0.25
20
110
11
0.4+0.15
–0.05
Fin
thickness
Custom ICs
78
79
2-2. MOS FETs
2-2-1. MOS FETs .........................................
108
2SK3710 (60V/70A/6mΩ,
Surface-mount
)...
108
2SK3711 (60V/70A/6mΩ)..............................
109
2SK3724 (60V/80A/5mΩ,
Surface-mount
)...
110
2SK3800 (40V/70A/6mΩ,
Surface-mount
)..
111
2SK3801 (40V/70A/6mΩ)..............................
112
2SK3803 (40V/85A/3mΩ,
Surface-mount
)...
113
2SK3851 (60V/85A/4.7mΩ)..........................
114
FKV460S (40V/60A/9mΩ,
Surface-mount
)...
115
FKV660S (60V/60A/14mΩ,
Surface-mount
)
116
2-2-2. MOS FET Arrays ...........................
117
SDK06
(52±5V/3A/0.25Ω, Surface-mount 4-circuits)
117
SDK08
(50V/4.5A/0.08Ω, Surface-mount 4-circuits)
118
SDK09
(12V/6A/0.2Ω, Surface-mount 4-circuits)
119
SLA5027 (60V/12A/0.08Ω, 4-circuits) ..........
120
SLA5098 (40V/20A/0.017Ω, 6-circuits) .......
121
SMA5113 (450V/7A/1.1Ω, 4-circuits) ..........
122
STA508A (120V/6A/0.2Ω, 4-circuits) ...........
123
STA509A (52±5V/3A/0.25Ω, 4-circuits) .......
124
2-3 Thyristors
2-3-1.
Reverse Conducting Thyristors
..
125
TFC561D (600V, 430A, 1200A/µs) ..............
125
TFC562D (600V, 600A, 1600A/µs) ..............
126
2-4. Diodes
2-4-1. Alternator Diodes ..........................
127
2-4-2.
High-voltage Diodes for Igniter
..
128
2-4-3. Power Zener Diodes ...................
129
2-4-4. General-purpose Diodes ..........
130
2
Discretes
2-1. Transistors
2-1-1. Transistors .........................................
80
2SA1488/1488A
(
–60V/–4A, –80V/–4A)
......
80
2SA1567 (
–
50V/
–
12A) ....................................
81
2SA1568 (
–
60V/ 12A) ....................................
82
2SA1908 (
–
120V/
–
8A) .....................................
83
2SB1622 (
–
200V/
–
15A) ...................................
84
2SC3852 (60V/3A) ...........................................
85
2SC4024 (50V/10A) ........................................
86
2SC4065 (60V/±12A) ......................................
87
2SC4153 (120V/7A) ........................................
88
2SD2141 (380±50V/6A) ..................................
89
2SD2382 (60±5V/±6A) ....................................
90
2SD2633 (150V/8A) ........................................
91
FP812 (–100V/–8A) ...........................................
92
MN611S (115±10V/±6A) .................................
93
MN638S (380±50V/6A) ...................................
94
SSD103 (65±5V/±6A, Surface-mount) ...........
95
2-1-2. Transistor Arrays ............................
96
SDA03 (–60V/–6A, Surface-mount 4-circuits)
96
SDA04 (–60V/–6A, Surface-mount 2-circuits)
97
SDC09
(65±5V/6A, Surface-mount 2-circuits)
98
SLA8004
(
60V/12A,
–
55V/
–
12A, H-bridge)
.........
99
SPF0001
(115±10V/±6A, Surface-mount 2-circuits)
100
STA315A (35±5V/2A, 3-circuits) ..................
101
STA335A (35±5V/3A, 2-circuits) ..................
102
STA415A (35±5V/2A, 4-circuits) ..................
103
STA460C (60±10V/±6A, 2-circuits) ..............
104
STA461C (65±5V/±6A, 2-circuits) ................
105
STA463C (115±10V/±6A, 2-circuits) ............
106
STA464C (65±5V/6A, 4-circuits) ..................
107
±
Absolute Maximum Ratings
Electrical Characteristics
Typical Switching Characteristics (common emitter)
Symbol Ratings Unit
(Ta=25ºC) (Ta
=
25ºC)
VCBO –60
2SA1488 2SA1488A Symbol Test Conditions Ratings Unit
ICBO
–12
VCC
(V)
6
RL
(Ω)
–2
IC
(A)
–10
VBB1
(V)
5
VBB2
(V)
–200
IB1
(mA)
200
IB2
(mA)
0.25typ
ton
(µs)
0.75typ
tstg
(µs)
0.25typ
tf
(µs)
µA
VCB
=
–80–60
–100max–100max
2SA1488A2SA1488
IEBO µA
VEB
= –
6V –100max
V(BR) CEO V
V
IC
= –
25mA –60min –80min
hFE VCE
= –
4V, IC
= –
1A 40min
VCE (sat) V
IC
= –
2A, IB
= –
0.2A –0.5max
fTMHz
VCE
= –
12V, IE
= –
0.2A 15typ
COB pF
VCB
= –
10V, f
=
1MHz 90typ
VCEO V
V
–60
–80
–80
VEBO V
–6
ICA
–4
IBA
–1
PCW
25 (Tc
=
25ºC)
Tj ºC
150
Tstg ºC
–55 to +150
■ IC—VCE Characteristics (typ.)
■ PC—Ta Derating
■ IC—VBE Temperature Characteristics (typ.)
■ hFE—IC Characteristics (typ.) ■ hFE—IC Temperature Characteristics (typ.)
■ fT—IE Characteristics (typ.)
■ j-a —t Characteristics
■ Safe Operating Area (single pulse)
■ VCE (sat)—IB Characteristics (typ.)
Power Transistor 2SA1488/1488A
80
–30mA
–40mA
–50mA
–60mA
–20mA
–10mA
I
B
= –5mA
–80mA
0.7
1
5
30
20
10
2
0
0255075100 125 150
With infinite heatsink
Without heatsink
10 50 10035
–1
–0.5
–0.05
–0.1
–10
–5
Without heatsink
natural air cooling
20
50
100
500
Typ
1ms
10ms
100ms
DC
150 • 150 • 2
100 • 100 • 2
50 • 50 • 2
20
50
100
200
125ºC
25ºC
–30ºC
0.005 0.01 0.05
0.50.1 1 3
0
10
20
30
60
50
40
Typ
0
0
–4
–3
–2
–1
–6 –0.01 –0.05 –0.1 –0.5 –1
–5–4–3–2–1
VCE (V)
IC (A)
–0.5
–1.0
–1.5
0
IB (A)
VCE (sat) (V)
–1A
–2A
IC
= –3A
0
–1
–2
–3
–4
0 –0.5 –1.0 –1.5
VBE (V)
IC (A)
(VCE
= –4V)
125ºC (Case temperature)
25
ºC
(Case temperature)
–30ºC (Case temperature)
110100 1000
t (ms)
j-a (ºC/W)
(VCE
= –4V)
(VCE
= –4V)
–0.02
–0.01 –0.1 –0.5 –1 –4 –0.1 –1 –4
IC (A)
IC (A)
hFE
hFE
fT (MHz)
(VCE
= –12V)
IE (A) VCE (V)
IC (A)
Ta (ºC)
PC (W)
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
a) Part No.
b) Lot No.
(Unit: mm)
External Dimensions TO220F (full-mold)
BCE
C0.5
16.9
(13.5)
8.4
0.8
3.9 4
10.0
2.6
4.2
2.8
1.35
1.35
0.85
2.54 2.54 0.45
3.3
2.2
a
b
Symbol Ratings Unit
(Ta
=
25ºC) (Ta=25ºC)
VCBO –50
Symbol Test Conditions Ratings Unit
ICBO
–24
VCC
(V)
4
RL
(Ω)
–6
IC
(A)
–10
VBB1
(V)
5
VBB2
(V)
–120
IB1
(mA)
120
IB2
(mA)
0.4typ
ton
(µs)
0.4typ
tstg
(µs)
0.2typ
tf
(µs)
µA
VCB
= –
50V –100max
IEBO µA
VEB
= –
6V –100max
V(BR) CEO V
IC
= –
25mA –50min
hFE VCE
= –
1V, IC
= –
6A 50min
VCE
(
sat) V
IC
= –
6A, IB
= –
0.3A –0.35max
fTMHz
VCE
= –
12V, IE
= –
0.5A 40typ
COB pF
VCB
= –
10V, f
=
1MHz 330typ
VCEO V
V
–50
VEBO V
–6
ICA
–12
IBA
–3
PCW
35 (Tc
=
25ºC)
Tj ºC
150
Tstg ºC
–55 to +150
Absolute Maximum Ratings
Electrical Characteristics
Typical Switching Characteristics (common emitter)
■ IC—VCE Characteristics (typ.)
■ PC—Ta Derating
■ IC—VBE Temperature Characteristics (typ.)
■ hFE—IC Characteristics (typ.) ■ hFE—IC Temperature Characteristics (typ.)
■ fT—IE Characteristics (typ.)
■ j-a —t Characteristics
■ Safe Operating Area (single pulse)
■ VCE (sat)—IB Characteristics (typ.)
Power Transistor 2SA1567
81
0
0
–8
–4
–12
–6
–2
–10
–2–1 –3 –4 –5 –6
VCE (V)
IC (A)
–40mA
–60mA
–100mA
–150mA
–20mA
–10mA
–5mA
–200mA
–10 –50 –100–3 –5
–1
–0.5
–0.05
–0.1
–30
–10
–5
VCE (V)
IC (A)
Without heatsink
natural air cooling
0
–1.5
–1.0
–0.5
–2 –100–10 –1000 –3000
IB (mA)
VCE(sat) (V)
–0.02 –0.1 –1 –10
30
50
100
500
IC (A)
hFE
(VCE
= –1V)
Typ
1ms
10ms
100ms
DC
0.3
0.5
4
1
110100 1000
t (ms)
j-a (ºC/W)
0.05 0.1 1 12
0
20
30
40
50
fT (MHz)
(VCE
= –12V)
IE (A)
Typ
0
–12
–6
–8
–10
–4
–2
0 –1.2–0.4–0.2 –0.6 –0.8 –1.0
VBE (V)
IC (A)
(VCE
= –4V)
125ºC (Case temperature)
25ºC (Case temperature)
–30ºC (Case temperature)
(VCE
= –1V)
–0.02 –0.1 –1 –10
30
50
100
500
IC (A)
hFE
125ºC
25ºC
–30ºC
35
30
20
10
2
00255075100 125 150
Ta (ºC)
PC (W)
With infinite heatsink
Without heatsink
50 • 50 • 2
100
•
100
•
2
150 • 150 • 2
–1A
–3A
–6A –9A
IC
= –12A
IB
=
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
External Dimensions TO220F (full-mold)
a) Part No.
b) Lot No.
(Unit: mm)
BCE
C0.5
16.9
(13.5)
8.4
0.8
3.9 4
10.0
2.2
2.6
4.2
2.8
1.35
1.35
0.85
2.54 2.54 0.45
3.3
a
b
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO –60
Symbol Test Conditions Ratings Unit
ICBO
–24
VCC
(V)
4
RL
(Ω)
–6
IC
(A)
–10
VBB1
(V)
5
VBB2
(V)
–120
IB1
(mA)
120
IB2
(mA)
0.4typ
ton
(µs)
0.4typ
tstg
(µs)
0.2typ
tf
(µs)
µA
VCB
= –
60V –100max
IEBO mA
VEB
= –
6V –60max
V(BR) CEO V
IC
= –
25mA –60min
hFE VCE
= –
1V, IC
= –
6A 50min
VCE (sat) V
V
IC
= –
6A, IB
= –
0.3A –0.35max
VFEC IECO
= –
10A –2.5max
fTMHz
VCE
= –
12V, IE
=
0.5A 40typ
COB pF
VCB
= –
10V, f
=
1MHz 330typ
VCEO V
V
–60
VEBO V
–6
ICA
IBA
–3
PCW
35 (Tc=25ºC)
Tj ºC
150
Tstg ºC
–55 to +150
12
±
Absolute Maximum Ratings
Electrical Characteristics
Typical Switching Characteristics (common emitter)
■ IC
— VCE Characteristics (typ.)
■ PC
— Ta Derating
■ IC
— VBE Temperature Characteristics (typ.)
■ hFE
— IC Characteristics (typ.) ■ hFE
— IC Temperature Characteristics (typ.)
■ fT
— IE Characteristics (typ.)
■ j-a
— t Characteristics
■ Safe Operating Area (single pulse)
■ VCE (sat)
— IB Characteristics (typ.)
Power Transistor 2SA1568
82
0
0
–8
–4
–12
–6
–2
–10
–2–1 –3 –4 –5 –6
–
40mA
–60mA
–100mA
–
150mA
–20mA
–10mA
I
B
=
–200mA
–10 –50 –100–3 –5
–1
–0.5
–0.05
–0.1
–30
–10
–5
Without heatsink
natural air cooling
0
–1.4
–1.0
–0.5
–7 –100–10 –1000 –3000
–0.02 –0.1 –1 –12
–10
2
10
300
100
Typ
–0.02 –0.1 –1 –12
–10
2
10
300
100
1ms
10ms
100ms
DC
0.3
0.5
4
1
110100 1000
0.05 0.1 1 10
0
20
30
50
40
Typ
35
30
20
10
2
00255075100 125 150
With infinite heatsink
Without heatsink
50 • 50 • 2
100 • 100 • 2
150 • 150 • 2
0
–12
–6
–8
–10
–4
–2
0 –1.2–0.4–0.2 –0.6 –0.8 –1.0
125ºC 25ºC
–
30ºC
VCE (V)
IC (A)
IB (mA)
VCE (sat) (V)
–1A
–3A
–6A
–9A
IC
= –12A
VBE (V)
IC (A)
(VCE
= –1V)
125ºC (Case temperature)
25ºC (Case temperature)
–30ºC (Case temperature)
t (ms)
j-a (ºC/W)
(VCE
= –1V)
IC (A)
hFE
IC (A)
hFE
(VCE
= –1V)
fT (MHz)
(VCE
= –12V)
IE (A) VCE (V)
IC (A)
Ta (ºC)
PC (W)
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
a) Part No.
b) Lot No.
(Unit : mm)
External Dimensions TO220F (full-mold)
BCE
C0.5
16.9
(13.5)
8.4
0.8
3.9 4
10.0
2.2
2.6
4.2
2.8
1.35
1.35
0.85
2.54 2.54 0.45
3.3
a
b
83
■ IC
— VCE Characteristics (typ.)
■ PC
— Ta Derating
■ IC
— VBE Temperature Characteristics (typ.)
■ hFE
— IC Characteristics (typ.) ■ hFE
— IC Temperature Characteristics (typ.)
■ fT
— IE Characteristics (typ.)
■ j-a
— t Characteristics
■ Safe Operating Area (single pulse)
■ VCE (sat)
— IB Characteristics (typ.)
VCE (V)
IC (A)
IB (mA)
VCE(sat) (V)
VBE (V)
IC (A)
t (ms)
IC (A)
hFE
IC (A)
hFE
fT (MHz)
IE (A) VCE (V)
IC (A)
Ta (ºC)
PC (W)
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO –120
Symbol Test Conditions Ratings Unit
ICBO
–40
VCC
(V)
10
RL
(Ω)
–4
IC
(A)
–10
VBB1
(V)
5
VBB2
(V)
–400
IB1
(mA)
400
IB2
(mA)
0.14typ
ton
(µs)
1.40typ
tstg
(µs)
0.21typ
tf
(µs)
µA
VCB
=
–120V –10max
IEBO µA
VEB
= –
6V –10max
V(BR) CEO V
IC
=
–50mA –120min
hFE
*
VCE
= –
4V, IC
=
–3A 50min
VCE
(sat) V
IC
=
–3A, IB
= –
0.3A –0.5max
fTMHz
VCE
= –
12V, IE
=
0.5A 20typ
COB pF
VCB
= –
10V, f
=
1MHz 300typ
VCEO V
V
–120
VEBO V
–6
–8
ICA
IBA
–3
PCW
75 (Tc=25ºC)
Tj ºC
150
Tstg ºC
–55 to +150
Absolute Maximum Ratings
Electrical Characteristics
Typical Switching Characteristics (common emitter)
Power Transistor 2SA1908
External Dimensions FM100 (T03PF)
4.41.5 1.5
BEC
5.45±0.1 5.45±0.1
3.3±0.2
1.6
3.3
1.75
0.8±0.2
2.15
1.05
23.0±0.3
16.2
9.5±0.2
5.5
15.6±0.2 5.5±0.2
3.45±0.2
3.35
0.65
+0.2
–
0.1
+0.2
–
0.1
3.0
0.8
a
b
0
0
–2
–4
–6
–8
–1 –2 –3 –4
–350mA
–200mA
–150mA
–25mA
–100mA
–75mA
–50mA
IB=–10mA
0
–3
–2
–1
0 –0.2 –0.4 –0.6 –0.8 –1.0
IC=–8A
–4A
–2A 0
–8
–6
–2
–4
0 –1.5–1.0–0.5
(VCE
= –4V)
–0.02 –0.1 –0.5 –1 –8–5
30
50
100
200 (VCE
= –4V)
Typ
0.02
0.1
0.05
0.5 1 5 8
0
20
10
30 (VCE
= –12V)
Typ
0.2
0.5
4
1
110100 1000 2000
80
60
40
20
3.5
005025 75 125100 150
(VCE
= –4V)
–0.02 –0.1 –0.5 –1 –5 –8
30
50
100
300
125ºC
25ºC
–30ºC
DC
100ms
10ms
–10–5 –50 –100 –150
–0.1
–1
–0.5
–10
–20
–5
a) Part No.
b) Lot No.
(Unit : mm)
With infinite heatsink
Without heatsink
Without heatsink
natural air cooling
j-a (ºC/W)
125ºC (Case temperature)
25ºC (Case temperature)
–30ºC (Case temperature)
*Rank: O (50 to 100), P (70 to 140), Y(90 to 180)
Symbol Ratings Unit
(Ta=25ºC)
VCBO –200
VCEO V
V
–200
VEBO V
–5
ICA
IBA
–1
PCW
85 (Tc=25ºC)
Tj ºC
150
Tstg ºC
–55 to +150
–15
Absolute Maximum Ratings
Power Transistor 2SB1622
70
a) Part No.
b) Lot No.
(Unit : mm)
External Dimensions
Electrical Characteristics
(Ta=25ºC)
Symbol Test Conditions Ratings Unit
ICBO µA
VCB
= –
200V
min
IEBO µA
VEB
= –
5V
VCEO V
IC
= –
30mA
hFE
*
VCE
= –
4V, IC
= –
10A
–
200
VCE
(
sat
)
VIC
= –
10A, IB
= –
10mA
5000
VBE
(
sat
)
VIC
= –
10A, IB
= –
10mA
fTMHzVCE
= –
12V, IE
=
2A
COB pFVCB
= –
10V, f
=
1MHz
typ
60
270
–
100
max
–
100
–
2.5
30000
–
3.0
–40
VCC
(V)
4
RL
(Ω)
–10
IC
(A)
–10
VBB1
(V)
5
VBB2
(V)
–10
IB1
(mA)
10
IB2
(mA)
0.4typ
ton
(µs)
3.6typ
tstg
(µs)
1.0typ
tf
(µs)
Typical Switching Characteristics
*Rank: O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
■ IC
— VCE Characteristics (typ.) ■ VCE (sat)
— IB Characteristics (typ.) ■ VCE (sat)
— IB
Temperature Characteristics (typ.)
■ VCE (sat)
— IB
Temperature Characteristics (typ.)
■ IC
— VBE Temperature Characteristics (typ.) ■ hFE
— IC Characteristics (typ.)
■ hFE
— IC Temperature Characteristics (typ.) ■ ton•tstg •tf
— IC Characteristics (typ.) ■ j-a
— t Characteristics
■ fT
— IE Characteristics (typ.) ■ Safe Operating Area ■ PC
— Ta Derating
0
5
IC (A)
15
10
0–2–4–6
VCE (V)
VCE (sat) (V)
–2
–1
0
–3
–10–1–0.2 –
100
–
200
IB (mA)
5
0
IC (A)
10
15
5000
1000
hFE
100000
50000
10000
–1 –2 –3
VBE (V)
–1–0.5–0.2 – 5 –10 –20
IC (A)
5000
1000
hFE
100000
50000
10000
–1–0.5–0.2 –5 –10 –20
IC (A)
0.5
0.1
1.0
3.0
110100
1000 2000
t (sec)
0.5
ton• tstg• tf (µsec)
1
5
0.1
10
–0.2 –5 –10 –20–1–0.5
IC (A)
VCE (sat) (V)
–3
–2
–1
0
–0.2 –1 –10 –
100
–
200
IB (mA)
20
0
fT (MHz)
80
60
40
0.02 0.1 0.5 1 5 10
IE (A)
–0.5
–1
–0.05
–0.1
IC (A)
–10
–50
–30
–5
–3 –10 –100 –500
VCE (V)
30
PC (W)
90
80
70
60
50
40
20
10
00255075 125 150100
Ta (ºC)
–2
–1
0
VCE (sat) (V)
–3
–0.1 –1–10 –
100
–
200
IB (mA)
IB=–0.3mA
–0.5mA
–0.8mA
–1.0mA
–1.5mA
–50mA
–15mA
–5.0mA
–3.0mA
Ta = 25ºC
VCC = –40V
–IB1 = IB2 = 10mA
ton
tf
tstg
With infinite heatsink
VCE = – 4V
typ
VCE = – 4V
150ºC
125ºC
100ºC
75ºC
50ºC
25ºC
0ºC
–30ºC
–55ºC
(VCE = – 4V)
Ta=150ºC
125ºC
100ºC
75ºC
50ºC
25ºC
0ºC
–30ºC
–55ºC
IC =–10A
IC =–5A
IC =–5A
IC =–15A
125ºC
75ºC
25ºC
–30ºC
IC = –10A
125ºC
75ºC
25ºC
–30ºC
Ta
=
25ºC
(single pulse)
10ms
100ms
D.C.
Without heatsink
84
a
b
Without heatsink
natural air cooling
j-a (ºC/W)
3.3±0.2
5.5±0.2
3.45±0.2
5.5±0.2
9.5 ±0.2
23.0±0.3
0.8
3.0
0.8
1.6
3.3
16.2
1.75±0.15
2.15±0.15
5.45±0.1
5.45±0.1 3.35±0.2
15.6±0.2
1.5
BCE
1.54.4
1.05 –0.1
+0.2 0.65–0.1
+0.2
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO 80
Symbol Test Conditions Ratings Unit
20
VCC
(V)
20
RL
(Ω)
1.0
IC
(A)
10
VBB1
(V)
–5
VBB2
(V)
15
IB1
(mA)
–30
IB2
(mA)
0.8typ
ton
(µs)
3.0typ
tstg
(µs)
1.2typ
tf
(µs)
µA
10max
IEBO µA
VEB
=
6V
ICBO VCB
=
80V
100max
V(BR) CEO V
IC
=
25mA 60min
hFE VCE
=
4V, IC
=
0.5A 500min
VCE (sat) V
IC
=
2A, IB
=
50mA 0.5max
fTMHz
VCE
=
12V, IE
= –
0.2A 15typ
COB pF
VCB
=
10V, f
=
1MHz 50typ
VCEO V
V
60
VEBO V
6
ICA
3
IBA
1
PCW
25 (Tc=25ºC)
Tj ºC
150
Tstg ºC
–55 to +150
Absolute Maximum Ratings
Electrical Characteristics
Typical Switching Characteristics (common emitter)
■ IC
— VCE Characteristics (typ.)
■ PC
— Ta Derating
■ IC
— VBE Temperature Characteristics (typ.)
■ hFE
— IC Characteristics (typ.) ■ hFE
— IC Temperature Characteristics (typ.)
■ fT
— IE Characteristics (typ.)
■ j-a
— t Characteristics
■ Safe Operating Area (single pulse)
■ VCE (sat)
— IB Characteristics (typ.)
Power Transistor 2SC3852
85
0
0
1
2
3
213456
IB=12mA
0.5mA
1mA
2mA
3mA
5mA
8mA
0.01 0.1 0.5 1 3
100
500
2000
1000
(VCE=4V)
Typ
0.01 0.1 0.5 1 3
100
500
2000
1000
0.5
1
5
110100 1000
VCB
= 10V
IE
= –2A
10 5035 100
0.05
0.1
1
0.5
10
5
Without heatsink
natural air cooling
DC
100ms
10ms
1ms
0
1.0
1.5
0.5
0.001 0.005 0.01
0.10.05 10.5
2A
3A
0
2
3
1
0 1.1
1.00.5
25
ºC
–30
ºC
125ºC
–0.005 –0.01
–
0.1
–0.5
–0.05
–2–1
20
10
0
30
Typ
30
20
10
0050100 150
With infinite heatsink
Without heatsink
VCE (V)
IC (A)
IB (A)
VCE(sat)
(V)
IC=1A
VBE (V)
IC (A)
(VCE
= 4V)
125ºC (Case temperature)
25ºC (Case temperature)
–30ºC (Case temperature)
t (ms)
j-a (ºC/W)
(VCE=4V)
IC (A)IC (A)
hFE
hFE
fT (MHz)
(VCE
= 12V)
IE (A) VCE (V)
IC (A)
Ta (ºC)
PC (W)
a) Part No.
b) Lot No.
(Unit : mm)
External Dimensions TO220F (full-mold)
BCE
C0.5
16.9
(13.5)
8.4
0.8
3.9 4
10.0
2.2
2.6
4.2
2.8
1.35
1.35
0.85
2.54 2.54 0.45
3.3
a
b
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO 100
Symbol Test Conditions Ratings Unit
ICBO
20
VCC
(V)
4
RL
(Ω)
5
IC
(A)
0.1
IB1
(A)
–0.1
IB2
(A)
0.5typ
ton
(µs)
2.0typ
tstg
(µs)
0.5typ
tf
(µs)
µA
µA
VCB
=
100V 10max
IEBO VEB
=
15V 10max
V(BR) CEO V
IC
=
25mA 50min
hFE VCE
=
4V, IC
=
1A 300 to 1600
VCE (sat) V
IC
=
5A, IB
=
0.1A 0.5max
fTMHz
VCB
=
12V, IE
= –
0.5A 24typ
COB pF
VCB
=
10V, f
=
1MHz 150typ
VCEO V
V
50
VEBO V
15
ICA
IBA
3
PCW
35 (Tc=25ºC)
Tj ºC
150
Tstg ºC
–55 to +150
10
Absolute Maximum Ratings
Electrical Characteristics
Typical Switching Characteristics (common emitter)
■ IC
— VCE Characteristics (typ.)
■ PC
— Ta Derating
■ IC
— VBE Temperature Characteristics (typ.)
■ hFE
— IC Characteristics (typ.) ■ hFE
— IC Temperature Characteristics (typ.)
■ fT
— IE Characteristics (typ.)
■ j-a
— t Characteristics
■ Safe Operating Area (single pulse)
■ VCE (sat)
— IB Characteristics (typ.)
Power Transistor 2SC4024
0
0
4
2
6
10
8
246
I
B
= 35mA
5mA
25mA
30mA
10mA
15mA
20mA
0
1.0
1.5
0.5
0.002 0.01 0.1 21
0.02 0.1 0.5 5110
100
500
1000
Typ
0.02 0.1 0.5 5110
100
500
1000
10A
0.3
0.5
1
4
110100 1000
10 5035 100
0.2
1
0.5
30
10
5
Without heatsink
natural air cooling
DC
100ms
10ms
1ms
40
30
20
10
2
00255075100 125 150
With infinite heatsink
Without heatsink
50 • 50 • 2
100 • 100 • 2
0
10
2
4
8
6
0 1.2
1.00.5
25
ºC
–30
ºC
125ºC
–
0.05
–0.1 –1–0.5 –5 –10
20
10
0
30
Typ
VCE (
V)
IC (
A)
IB (
A)
VCE (sat) (
V)
IC
= 1A 3A 5A
VBE (
V)
IC (
A)
(VCE
= 4V)
125ºC (Case temperature)
25ºC (Case temperature)
–30ºC (Case temperature)
t (
ms)
j-a (
ºC
/W
)
(VCE
= 4V)(VCE
= 4V)
IC (
A)
IC (
A)
hFE
hFE
fT (MHz)
(VCE
= 12V)
IE (
A)
VCE (
V)
IC (
A)
Ta (
ºC)
PC (
W)
150 • 150 • 2
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
a) Part No.
b) Lot No.
(Unit: mm)
External Dimensions TO220F (full-mold)
BCE
C0.5
16.9
(13.5)
8.4
0.8
3.9 4
10.0
2.2
2.6
4.2
2.8
1.35
1.35
0.85
2.54 2.54 0.45
3.3
a
b
86
87
Absolute Maximum Ratings
Electrical Characteristics
Typical Switching Characteristics (common emitter)
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO 60
Symbol Test Conditions Ratings Unit
ICBO
24
VCC
(V)
4
RL
(Ω)
6
IC
(A)
10
VBB1
(V)
–5
VBB2
(V)
0.12
IB1
(A)
–0.12
IB2
(A)
0.6typ
ton
(µs)
1.4typ
tstg
(µs)
0.4typ
tf
(µs)
µA
VCB
=
60V 100max
IEBO mA
VEB
=
6V 60max
V(BR) CEO V
IC
=
25mA 60min
hFE VCE
=
1V, IC
=
6A 50min
VCE (sat) V
V
IC
=
6A, IB
=
1.3A 0.35max
VFEC VECO
=
10A 2.5max
fTMHz
VCE
=
12V, IE
= –
0.5A 24typ
COB pF
VCB
=
10V, f
=
1MHz 180typ
VCEO V
V
60
VEBO V
6
ICA
IBA
3
PCW
35 (Tc=25ºC)
Tj ºC
150
Tstg ºC
–55 to +150
±12
■ IC
— VCE Characteristics (typ.)
■ PC
— Ta Derating
■ IC
— VBE Temperature Characteristics (typ.)
■ hFE
— IC Characteristics (typ.) ■ hFE
— IC Temperature Characteristics (typ.)
■ fT
— IE Characteristics (typ.)
■ j-a
— t Characteristics
■ Safe Operating Area (single pulse)
■ VCE (sat)
— IB Characteristics (typ.)
Power Transistor 2SC4065
0
0
4
2
8
6
12
10
246
200mA
I
B
= 10mA
20mA
40mA
60mA
100mA
150mA
0
1.0
1.3
0.5
0.005 0.01
0.1 31
IC
= 1A
12A
3A
6A
9A
0.02 0.1 1 10 12
3
5
50
10
100
400
Typ
0.02 0.1 1 1012
3
5
50
10
100
400
0.2
0.5
1
5
110100 1000
10 5035 100
0.05
0.1
1
0.5
30
10
5
Without heatsink
natural air cooling
DC
100ms
10ms
1ms
40
30
20
10
2
00255075100 125 150
With infinite heatsink
Without heatsink
50 • 50 • 2
100
•
100
•
2
0
12
10
2
4
8
6
0 1.1
1.00.5
25
ºC
–30
ºC
125ºC
–0.05 –0.1 –1–0.5 –5 –12–10
20
10
0
30
Typ
VCE (V)
IC (A)
IB (A)
VCE (sat)
(V)
VBE (V)
IC (A)
(VCE
= 1V)
25
ºC
(Case temperature)
125ºC (Case temperature)
–30
ºC
(Case temperature)
t (ms)
j-a (ºC/W)
(VCE
= 1V)
(VCE
= 1V)
IC (A)IC (A)
hFE
hFE
fT (MHz)
(VCE
= 12V)
IE (A) VCE (V)
IC (A)
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
Ta (ºC)
PC (W)
150 • 150 • 2
a) Part No.
b) Lot No.
(Unit: mm)
External Dimensions TO220F (full-mold)
BCE
C0.5
16.9
(13.5)
8.4
0.8
3.9 4
10.0
2.2
2.6
4.2
2.8
1.35
1.35
0.85
2.54 2.54 0.45
3.3
a
b
Symbol Ratings Unit
(Ta=25ºC) (Ta =25ºC)
VCBO 200
Symbol Test Conditions Ratings Unit
ICBO
50
VCC
(V)
16.7
RL
(Ω)
3
IC
(A)
10
VBB1
(V)
–5
VBB2
(V)
0.3
IB1
(A)
–0.6
IB2
(A)
0.5max
ton
(µs)
3max
tstg
(µs)
0.5max
tf
(µs)
µA
VCB
=
200V 100max
IEBO µA
VEB
=
8V 100max
V(BR) CEO V
IC
=
50mA 120min
hFE VCE
=
4V, IC
=
3A 70 to 220
VCE (sat) V
V
IC
=
3A, IB
=
0.3A 0.5max
VBE (sat) IC
=
3A, IB
=
0.3A 1.2max
fTMHz
VCE
=
12V, IE
= –
0.5A 30typ
COB pF
VCB
=
10V, f
=
1MHz 110typ
VCEO V
V
120
VEBO V
8
ICA
IBA
3
PCW
30 (Tc=25ºC)
Tj ºC
150
Tstg ºC
–55 to +150
7 (pulse 14)
Absolute Maximum Ratings
Electrical Characteristics
Typical Switching Characteristics (common emitter)
■ IC
— VCE Characteristics (typ.)
■ PC
— Ta Derating
■ IC
— VBE Temperature Characteristics (typ.)
■ hFE
— IC Characteristics (typ.) ■ hFE
— IC Temperature Characteristics (typ.)
■ fT
— IE Characteristics (typ.) ■ Safe Operating Area (single pulse)
■ VCE (sat)
— IB Characteristics (typ.)
Power Transistor 2SC4153
0
0
3
4
2
1
5
7
5
2134
200mA
150mA
100mA
I
B
=10mA
20mA
40mA
60mA
0
2
3
1
0.005 0.01
0.1 21
IC
= 1A
3A
5A
0.01 0.1 0.5 1 75
20
50
100
300
(VCE
= 4V)
Typ
0.01 0.1 0.5 1 75
20
50
100
300
0.2
0.5
1
5
110100 1000
–0.01 –0.1 –1 –5
0
10
20
40
30
Typ
10 100505 200
0.05
1
0.5
0.1
20
10
5
Without heatsink
natural air cooling
100µs
10ms
30
20
10
2
00255075100 125 150
With infinite heatsink
Without heatsink
0
7
2
3
4
5
6
1
0 1.1
1.00.5
25
ºC
–30
ºC
125ºC
VCE (V)
IC (A)
IB (A)
VCE (sat)
(V)
VBE (V)
IC (A)
(VCE
= 4V)
25ºC (Case temperature)
125ºC (Case temperature)
–30ºC (Case temperature)
t (ms)
(VCE
= 4V)
IC (A)
IC (A)
hFE
hFE
fT (MHz)
(VCE
= 12V)
IE (A) VCE (V)
IC (A)
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
Ta (ºC)
PC (W)
50 • 50 • 2
100
•
100
•
2
150 • 150 • 2
a) Part No.
b) Lot No.
(Unit: mm)
External Dimensions TO220F (full-mold)
BCE
C0.5
16.9
(13.5)
8.4
0.8
3.9 4
10.0
2.2
2.6
4.2
2.8
1.35
1.35
0.85
2.54 2.54 0.45
3.3
a
b
■ j-a
— t Characteristics
j-a (ºC/W)
88
89
Absolute Maximum Ratings
Electrical Characteristics
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO 380±50
Symbol Test Conditions Ratings Unit
ICBO µA
VCB
=
330V 10max
IEBO µA
VEB
=
6V 20max
V(BR) CEO V
IC
=
25mA
hFE VCE
=
2V, IC
=
3A
330 to 430
VCE (sat) VIC
=
4A, IB
=
20mA 1.5max
1500min
VCEO V
V
380±50
VEBO V
6
ICA
IBA
1
PCW
35 (Tc=25ºC)
Tj ºC
150
Tstg ºC
–55 to +150
6 (pulse 10)
■ IC
— VCE Characteristics (typ.)
■ PC
— Ta Derating
■ IC
— VBE Temperature Characteristics (typ.)
■ hFE
— IC Characteristics (typ.) ■ hFE
— IC Temperature Characteristics (typ.)
■ fT
— IE Characteristics (typ.)
■ j-a
— t Characteristics
■ Safe Operating Area (single pulse)
■ VCE (sat)
— IB Characteristics (typ.)
Power Transistor 2SD2141
0
0
5
10
246
I
B
= 1mA
2mA
4mA
18mA
20mA
90mA
60mA
0
3
2
1
0.2
10.5 105 20010050
1A
3A 5A
IC
= 7A
0.02 0.1 10.5 105
5000
10000
1000
500
100
10
50
Typ
0.1
1
5
0.5
110100 1000
1ms
10ms
100ms
501051 100 500
0.01
0.05
0.1
1
0.5
10
20
5
DC
Without heatsink
natural air cooling
40
30
20
10
2
00255075100 125 150
With infinite heatsink
Without heatsink
0
10
5
0 2.0 2.41.0
0.02 0.1 1.0 5
0.5 10
5000
10000
1000
500
100
50
20
125ºC
–55
ºC
25
ºC
–0.05–0.01 –0.1 –0.5 –1 –5
0
20
10
30
40
Typ
VCE (V)
IC (A)
120mA
150mA
IB (mA)
VCE (sat) (V)
VBE (V)
IC (A)
(VCE
= 4V)
25ºC (Case temperature)
125ºC (Case temperature)
–30ºC (Case temperature)
t (ms)
j-a (ºC/W)
(VCE
= 2V)
(VCE
= 2V)
IC (A)IC (A)
hFE
hFE
fT (MHz)
(VCE
= 12V)
IE (A) VCE (V)
IC (A)
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
Ta (ºC)
PC (W)
100
•
100
•
2
150 • 150 • 2
50 • 50 • 2
a) Part No.
b) Lot No.
(Unit: mm)
External Dimensions TO220F (full-mold)
BCE
C0.5
16.9
(13.5)
8.4
0.8
3.9 4
10.0
2.2
2.6
4.2
2.8
1.35
1.35
0.85
2.54 2.54 0.45
3.3
a
b
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO V65±5
Symbol Test Conditions Ratings Unit
ICBO
12
VCC
(V)
12
RL
(Ω)
1
IC
(A)
10
VBB1
(V)
–5
VBB2
(V)
30
IB1
(mA)
–30
IB2
(mA)
0.25
ton
(µs)
0.8
tstg
(µs)
0.35
tf
(µs)
µAVCB
=
60V 10max
IEBO µAVEB
=
6V 10max
VCEO VIC
=
50mA 60 to 70
hFE VCE
=
1V, IC
=
1A 700 to 3000
VCE (sat) VIC
=
1.5A, IB
=
15mA 0.15max
VFEC VIFEC
=
6A 1.5max
Es/b mJL
=
10mH, single pulse 200min
VCEO V65±5
VEBO V 6
ICA ±6 (pulse ±10)
IBA 1
PCW30 (Tc=25ºC)
Tj ºC150
Tstg ºC–55 to +150
01234 5
■ IC
— VCE Characteristics (typ.)
■ PC
— Ta Derating
■ IC
— VBE Temperature Characteristics (typ.)
0
10
8
6
4
2
IC (A)
VCE (V)
0.01 0.05 0.1 10.5 5 10
■ hFE
— IC Characteristics (typ.)
5000
1000
500
100
50
30
hFE
IC (A)
(VCE
= 1V)
0.01 0.05 0.1 10.5 5 10
■ hFE
— IC Temperature Characteristics (typ.)
5000
1000
500
100
50
30
hFE
IC (A)
(VCE
= 1V)
–0.01 –0.05 –0.1 –1–0.5 –5 –10
■ fT
— IE Characteristics (typ.)
30
25
20
15
10
5
0
fT (MHz)
IE (A)
1510 10050 500 1000
■ j-a
— t Characteristics
5
1
0.5
0.3
j-a (ºC/W)
t (ms)
(VCE
= 1V)
(IC
= 1.5A)
050100 150
0
30
20
10
PC (W)
Ta (ºC)
■ Safe Operating Area (single pulse)
151050 100
20
10
1
0.1
0.5
5
IC (A)
VCE (V)
0 0.5 1.0 1.5
0
6
4
5
2
1
3
IC (A)
VBE (V)
■ VCE (sat)
— IB Temperature Characteristics (typ.)
151050 100 400
0
0.75
0.5
0.25
VCE (sat) (V)
IB (mA)
IB
= 1mA
3mA
5mA
10mA
20mA
30mA
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
50 • 50 • 2
100 • 100 • 2
150 • 150 • 2
Without heatsink
With infinite heatsink
Ta=55ºC
25ºC
75ºC
125ºC
Ta
= –55ºC
25ºC
75ºC
125ºC
Without heatsink
natural air cooling
0.5msec
1msec
10msec
100msec
D.C (Tc
= 25ºC)
Ta
= –55ºC
25ºC
75ºC
125ºC
Typ
Absolute Maximum Ratings
Electrical Characteristics
Typical Switching Characteristics
Power Transistor 2SD2382
Typ
a) Part No.
b) Lot No.
(Unit: mm)
External Dimensions TO220F (full-mold)
BCE
C0.5
16.9
(13.5)
8.4
0.8
3.9 4
10.0
2.2
2.6
4.2
2.8
1.35
1.35
0.85
2.54 2.54 0.45
3.3
a
b
90
91
Absolute Maximum Ratings
Electrical Characteristics
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO 200
Symbol Test Conditions Ratings Unit
ICBO µA
VCB=200V 100max
IEBO mA
VEB=6V 10max
VCEO V
IC=50mA
hFE VCE=2V, IC=6A
150min
VBE
(
sat
)
VIC=6A, IB=6mA 2.0max
VCE
(
sat
)
VIC=6A, IB=6mA 1.5max
2000min
VCEO V
V
150
VEBO V
6
8
ICA
IBA
1
PCW
35 (Tc
=
25ºC)
2 (Ta
=
25ºC, No Fin)
Tj ºC
150
Tstg ºC
–55 to +150
Power Transistor 2SD2633
External Dimensions TO220F (full-mold)
BCE
C0.5
16.9
(13.5)
8.4
0.8
3.9 4
10.0
2.2
2.6
4.2
2.8
1.35
1.35
0.85
2.54 2.54 0.45
3.3
a
b
a) Part No.
b) Lot No.
(Unit: mm)
0–1–2–3–4
–8
–6
–4
–2
0
IC (A)
VCE (V)
–0.01 –0.05 –0.1 –1–0.5 –5–8
500
100
30
50
hFE
IC (A)
(VCE
= –4V)
0.01 0.05 0.1 10.5 5 10
30
20
10
0
fT (MHz)
IE (A)
0.0002
0.01
0.001
0.1 1 10 100
50
10
1
5
0.1
0.5
0.05
j-a (ºC/W)
t (sec)
(VCE
= 12V)
050100 150
0
40
30
20
10
PC (W)
Ta (ºC)
–3 –5 –10 –50 –150–100
–12
–10
–1
–0.1
–0.5
–5
IC (A)
VCE (V)
0 –0.5 –1.0 –1.5
0
–8
–6
–2
–4
IC (A)
VBE (V)
–5 –10 –50 –100 –500 –2000–1000
0
–2
–1
VCE (sat)
(A)
IB (mA)
IB
= –10mA
–25mA
–50mA
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
100 •100 •2
200 • 200 •2
Without heatsink
With infinite heatsink
Tc
= –40ºC
25ºC
75ºC
125ºC
Ic
= –1A
Ic
= –3A
Ic
= –5A
1msec
10msec
100msec
D.C (Tc
= 25ºC)
Typ
–
75mA
–100mA
–
150mA
–200mA
–
300mA
Tc
= 25ºC
Single Pulese
NO Fin (Ta
= 25ºC)
(VBE
= –4V)
natural air cooling
Without heatsink
Symbol Ratings Unit
(Ta=25ºC) (Ta =25ºC)
VCBO –120
Symbol Test Conditions Ratings Unit
ICBO
–12
VCC
(V)
4
RL
(Ω)
–3
IC
(A)
–10
VBB1
(V)
5
VBB2
(V)
–30
IB1
(mA)
30
IB2
(mA)
2.5
ton
(µs)
0.4
tstg
(µs)
0.6
tf
(µs)
µA
VCB
= –
120V 10max
IEBO µA
VEB
= –
6V 10max
VCEO V
IC
= –
50mA
–
120min
hFE VCE
= –
4V, IC
= –
3A 70min
VCE (sat) V
IC
= –
3A, IB
= –
0.3A
–
0.3max
VCEO V
V
–120
VEBO V
–6
ICA
–8 (pulse –12)
IBA
–3
PCW
35 (Tc=25ºC)
Tj ºC
150
Tstg ºC
–55 to +150
Absolute Maximum Ratings
Electrical Characteristics
Typical Switching Characteristics
■ IC
— VCE Characteristics (typ.)
■ PC
— Ta Derating
■ IC
— VBE Temperature Characteristics (typ.)
■ hFE
— IC Characteristics (typ.) ■ hFE
— IC Temperature Characteristics (typ.)
■ fT
— IE Characteristics (typ.)
■ j-a
— t Characteristics
■ Safe Operating Area (single pulse)
■ VCE (sat)
— I B Characteristics (typ.)
Power Transistor FP812
92
Typ
–0.01 –0.05 –0.1 –1–0.5 –5 –8
500
100
50
30
hFE
IC (A)
(VCE
= –4V)
Tc
= 125ºC
75ºC
25ºC
–55ºC
a) Part No.
b) Lot No.
(Unit: mm)
External Dimensions TO220F (full-mold)
BCE
C0.5
16.9
(13.5)
8.4
0.8
3.9 4
10.0
2.2
2.6
4.2
2.8
1.35
1.35
0.85
2.54 2.54 0.45
3.3
a
b
Absolute Maximum Ratings
Electrical Characteristics
Symbol Ratings Unit
(Ta=25ºC) (Ta =25ºC)
VCBO 115±10 Symbol Test Conditions Ratings Unit
ICBO µA
VCB=105V
min
IEBO µA
VEB=6V
VCEO V
IC=50mA
hFE VCE=1V, IC=1A
105
VCE (sat) VIC=1.2A, IB=12mA
400
VCEO V
V
115±10
VEBO V
6
ICA
IBA
1
PCW
50 (Tc=25ºC)
1.2 (Ta=25ºC, No Fin)
Tj ºC
150
Tstg ºC
–55 to +150
VFEC VIFEC=6A
ES/B mJL=10mA 45
typ
115
0.08
800
1.25
10
max
10
125
0.12
1500
1.5
±6 (pulse ±10)
Power Transistor MN611S
93
External Dimensions TO220S
a
b
10.2±0.3
1.27±0.2
2.54±0.5
2.54±0.5
1.2±0.2
1.6
10.0
8.6±0.3 (1.4)
–0.5
+0.3
–0.5
+0.3
3.0
0.86 –0.1
+0.2
–0.1
+0.2
4.44±0.2
1.3±0.2
0.4±0.1
(1.5)
0.1
a) Part No.
b) Lot No.
(Unit: mm)
■ IC
— VCE Characteristics (typ.)
2
1
0
3
4
5
IC (A)
7
8
6
■ VCE (sat)
— IB Characteristics (typ.)
0
VCE (sat) (V)
0.5
0.75
0.25
■ VCE (sat)
— IB
Temperature Characteristics (typ.)
■ IC
— VBE
Temperature Characteristics (typ.)
■ hFE
— IC Characteristics (typ.) ■ hFE
— IC
Temperature Characteristics (typ.)
■ ton•tstg •tf
— IC Characteristics (typ.)
■ j-c •
j-a
— t
Characteristics
(Single pulse) ■ Safe Operating Area (Single pulse)
■ IFEC
— VFEC
Temperature Characteristics (typ.)
■ PT
— Ta Derating
2
1
0
3
4
IC (A)
6
7
5
IFEC (A)
0.1
IC (A)
10
20
1
20
10
0
PC (W)
50
60
40
30
30
hFE
1000
5000
100
10
50
1
0.1
0.1
ton•tstg •tf (µsec)
10
1
023456
VCE (V)
10100 1000
IB (mA)
10
0
VCE (sat) (V)
0.5
0.75
0.25
0 100 1000
IB (mA)
10
0.01 1 10
Ic (A)
0.1 30
hFE
1000
5000
100
0.01 1 10
Ic (A)
0.1
0.001 0.01 0.1 1 10
t (s)
0 1.0 1.5
VBE (V)
0.5
2
1
0
3
4
6
7
5
0 1.0 1.50.5
VFEC (V)
023
Ic (A)
1
1 100 200
VCE (V)
10 0 75 100 125 150
Ta (ºC)
25 50
IB =
1
mA
3mA
5mA
1
0mA
20mA
30mA
Ta = 25ºC
VCC = 12V
IB1 = –IB2 = 30mA
ton
tf
tstg
(Ta = 25ºC)
(VCE =
1
V) (VCE =
1
V)
typ
Ta = 150ºC
125ºC
75ºC
25ºC
–55ºC
(Ta = 25ºC)(Ta = 25ºC)
IC = 1.2A
IC = 0.5A
IC = 2A
(IC = 1.2A)
Ta = 150ºC
125ºC
75ºC
25ºC
–55ºC
(VCE = 1V)
Ta = 150ºC
125ºC
75ºC
25ºC
–55ºC
Ta = 150ºC
125ºC
75ºC
25ºC
–55ºC
(Tc = 25ºC)
FR4 (70 •
100 •
1.6mm) Use substrate
j-a
j-c
(Ta = 25ºC)
PT=50µs
PT=500µs
PT=1ms
PT=10ms
12
VCC
(V)
12
RL
(Ω)
1
IC
(A)
10
VBB1
(V)
–5
VBB2
(V)
30
IB1
(mA)
–30
IB2
(mA)
0.2 typ
ton
(µs)
5.7typ
tstg
(µs)
0.4typ
tf
(µs)
Typical Switching Characteristics
Without heatsink
j-c •
j-a (ºC/W)
Absolute Maximum Ratings
Electrical Characteristics
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO 380±50
Symbol Test Conditions Ratings Unit
ICBO µA
VCB=330V 10max
IEBO mA
VEB=6V 20max
V(BR) CEO V
IC=25mA
hFE VCE=2V, IC=3A
330 to 430
VCE (sat) VIC=4A, IB=20mA 1.5max
1500min
VCEO V
V
380±50
VEBO V
6
ICA
IBA
1
PCW
60 (Tc
=
25ºC)
Tj ºC
150
Tstg ºC
–55 to +150
6 (pulse 10)
■ IC
— VCE Characteristics (typ.) ■ IC
— VBE Temperature Characteristics (typ.)
■ hFE
— IC Characteristics (typ.) ■ hFE
— IC Temperature Characteristics (typ.) ■ j-c • j-a —t Characteristics
■ VCE (sat)
— I B Characteristics (typ.)
Power Transistor MN638S
94
0
0
5
10
246
I
B=
1mA
2mA
4mA
18mA
20mA
90mA
60mA
0
3
2
1
0.2
10.5 105 20010050
1A
3A 5A
IC
= 7A
0.02 0.1 10.5 105
5000
10000
1000
500
100
10
50
Typ
0.1
1
10
100
0.1 10.010.001 10
0
10
5
0 2.0 2.41.0
0.02 0.1 1.0 5
0.5 10
5000
10000
1000
500
100
50
20
125ºC
–55
ºC
25
ºC
VCE (V)
IC (A)
120mA
150mA
IB (mA)
VCE (sat) (V)
VBE (V)
IC (A)
(VBE
=4V)
25ºC (Case temperature)
125ºC (Case temperature)
–30ºC (Case temperature)
t (s)
(VCE
= 2V)
(VCE
= 2V)
IC (A)
IC (A)
hFE
hFE
External Dimensions TO220S
j-a
j-c
a
b
10.2±0.3
1.27±0.2
2.54±0.5
2.54±0.5
1.2±0.2
1.6
10.0
8.6±0.3 (1.4)
3.0–0.5
+0.3
–0.5
+0.3
0.86 –0.1
+0.2
–0.1
+0.2
4.44±0.2
1.3±0.2
0.4±0.1
(1.5)
0.1
a) Part No.
b) Lot No.
(Unit: mm)
j-c• j-a (ºC/W)
95
Absolute Maximum Ratings
Electrical Characteristics
(Ta=25ºC) (Ta =25ºC)
Symbol Test Conditions Ratings Unit
ICBO µA
VCB = 60V, IE = 0A
min
IEBO µA
VEB = 6V, IC = 0A
VCEO V
IC = 50mA
hFE VCE = 1V, IC = 1A
60
VCE (sat) VIC = 1.5A, IB = 15mA
400
VFEC VIFEC = 6A
Es/b mJL = 10mH 80
typ
65
0.11
800
1.25
10
max
10
70
0.15
1500
1.5
Surface-mount Power Transistor SSD103
External Dimensions SOP8
Symbol Ratings Unit
VCBO 65±5
VCEO V
V
65±5
VEBO V
6
6
IC (pulse)
IC
A
10
(
Pw 1mS, Duty 25%
)
IBA
10
PCW
1.5
Tj °C
150
Tstg °C
–55 to +150
*1: FR4 70mm•100mm •1.6mm
(drain heatsink copper foil area 25•25mm)
0.7±0.2
1.27±0.25
5.0±0.2
1.5±0.2
4.4±0.2
6.2±0.3
0.5±0.2
5.4Max
0 to 0.1
0.42+0.15
–0.05
0.17+0.15
–0.05
a
b
c
d
4.7Max
85
14
0 to 10°
a) Part No.
b) Corporate mark
c) Lot No.
d) Control No.
(Unit: mm)
012 534
■ IC
— VCE Characteristics (typ.)
0
5
4
3
2
IC (A)
VCE (V)
1
7
6
0
0.25
0.75
0.5
0.01 0.1 1 10
■ VCE (sat)
— I C Temperature Characteristics (typ.)
VCE (sat) (V)
IC (A)
0.01 0.1 101
■ hFE
— IC Temperature Characteristics (typ.)
50
hFE
2000
1000
500
100
0123
■ ton•tstg •tf
— IC Characteristics (typ.)
0.1
0.5
1
ton•tstg•tf (µS)
IC (A)IC (A)
5
151050 100
■ Safe Operating Area
0.5
0.1
1
5
IC (A)
VCE (V)
20
10
0 0.5 1.0 1.5
■ IC
— VBE Temperature Characteristics (typ.)
0
6
5
4
3
2
1
IC (A)
VBE (V)
IB = 1mA
3mA
VCC = 12V
IB1 = – I B2 = 30mA
IC/IB = 100
(VCE = 1V)
(VCE = 1V)
Ta = –55
ºC
25
ºC
75
ºC
125
ºC
1ms
0.5ms
10ms
Ta = 125
ºC
75
ºC
25
ºC
–55
ºC
10mA
30mA
20mA
5mA
Ta = 125
ºC
75
ºC
25
ºC
–55
ºC
tf
ton
tstg
natural air cooling
Without heatsink
Equivalent Circuit Diagram
5, 6, 7, 8
2, 3, 4
1
(Single pulse)
*1
0–1–2–3–4–5
■ IC
— VCE Characteristics
0
–5
–6
IC (A)
VCE (V)
–4
–3
–2
–1
050100 150
■ PT
— Ta Derating
0
3
2
1
PT (W)
Ta (ºC)
4
0.001 0.01 0.1 1 2
■ j-a
— t Characteristics (Single pulse)
0.3
1
5
10
j-a (ºC/W)
t (s)
50
–3 –5 –10 –50 –100
■ Safe Operating Area (Single pulse)
–0.1
–0.5
–10
–1
IC (A)
VCE (V)
–20
–0.05 –1–0.1 –10
■ VCE (sat)
— IC
Temperature Characteristics (typ.)
0
–1
–2
VCE (sat) (V)
IC (A)
–3
IB
= –5mA
–10mA
–20mA
–30mA
–50mA
IC/IB
= 20
(Ta
= 25ºC)
0 –0.5 –1.0 –1.5
■ IC
— VBE Temperature Characteristics (typ.)
0
–5
–4
–3
–2
–1
–6
IC (A)
VBE (V)
(VCE
= –4V)
Without heatsink
20ms
10ms
1ms
–200mA –100mA
Ta
= 150ºC
75ºC
25ºC
–55ºC
Ta
= 150ºC
75ºC
25ºC
–55ºC
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO –60
Symbol Test Conditions Ratings Unit
ICBO
–12
VCC
(V)
12
RL
(Ω)
–1
IC
(A)
–10
VBB1
(V)
5
VBB2
(V)
–50
IB1
(mA)
50
IB2
(mA)
0.4
ton
(µs)
1.75
tstg
(µs)
0.22
tf
(µs)
µA
VCB
= –
60V –10max
IEBO µA
VEB
= –
6V –10max
VCEO V
IC
= –
25mA –60min
hFE VCE
= –
4V, IC
= –
2A 100min
VCE (sat) V
IC
= –
2A, IB
= –
0.1A –0.4max
VCEO V
V
–60
VEBO V
–6
ICA
–6 (pulse –12)
IBA
–1
PTW
3 (No Fin)
Tj ºC
150
Tstg ºC
–55 to +150
Electrical Characteristics
Typical Switching Characteristics
natural air cooling
Without heatsink
15
16
2
13
14
4
11
12
6
9
10
8
Surface-mount Power Transistor Array SDA03
96
0.05
1
0.5
0.1
5
–0.5 –0.1 –0.5 –1 –5 –10
■ ton • tstg• tf
— IC Characteristics
ton•tstg •tf (µsec)
IC (A)
–0.01 –0.1 –1 –10
■ hFE
— IC Temperature Characteristics
30
100
50
500
hFE
IC (A)
1000
VCE
= –4V
Ta
= 150ºC
VCC
= 12V
IB1
= –IB2
= 50mA
ton
tf
tstg
75ºC
25ºC
–55ºC
Absolute Maximum Ratings
a) Part No.
b) Lot No.
(Unit: mm)
a
b
20.0max
2.54±0.25
0.89±0.15
8.0±0.5
6.3±0.2
0 to 0.15
3.0±0.2
0.25
9.8±0.3
1.0±0.3
19.56±0.2
6.8max
0.75
0.3+0.15
–0.05
+0.15
–0.05
16
Pin 1 8
9
4.0max
3.6±0.2
1.4±0.2
External Dimensions SMD-16A
Equivalent Circuit Diagram
050100 150
0
3
2
1
PT (W)
Ta (ºC)
4
Without heatsink
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO –60
Symbol Test Conditions Ratings Unit
ICBO
–12
VCC
(V)
12
RL
(Ω)
–1
IC
(A)
–10
VBB1
(V)
5
VBB2
(V)
–50
IB1
(mA)
50
IB2
(mA)
0.4
ton
(µs)
1.75
tstg
(µs)
0.22
tf
(µs)
µA
VCB
= –
60V –10max
IEBO µA
VEB
= –
6V –10max
VCEO V
IC
= –
25mA –60min
hFE VCE
= –
4V, IC
= –
2A 100min
VCE (sat) V
IC
= –
2A, IB
= –
0.1A –0.4max
VCEO V
V
–60
VEBO V
–6
ICA
–6 (pulse –12)
IBA
–1
PTW
2.5 (No Fin)
Tj ºC
150
Tstg ºC
–55 to +150
Absolute Maximum Ratings
Electrical Characteristics
Typical Switching Characteristics
15
16
2
9
10
8
■ PT
— Ta Derating
Surface-mount Power Transistor Array SDA04
97
0–1–2–3–4–5
■ IC
— VCE Characteristics
0
–5
–6
IC (A)
VCE (V)
–4
–3
–2
–1
0.05
1
0.5
0.1
5
–0.5 –0.1 –0.5 –1 –5 –10
■ ton•tstg•tf
— IC Characteristics
ton•tstg•tf (µsec)
IC (A)
–0.01 –0.1 –1 –10
■ hFE
— IC Temperature Characteristics
30
100
50
500
hFE
IC (A)
1000
0.001 0.01 0.1 1 2
■ j-a
— t Characteristics (Single pulse)
0.3
1
5
10
j-a (ºC/W)
t (s)
50
–3 –5 –10 –50 –100
■ Safe Operating Area (Single pulse)
–0.1
–0.5
–10
–1
IC (A)
VCE (V)
–20
–0.05 –1–0.1 –10
■ VCE (sat)
— IC Temperature Characteristics (typ.)
0
–1
–2
VCE (sat) (V)
IC (A)
–3
IB
= –5mA
–10mA
–20mA
–30mA
–50mA
IC/IB
= 20
VCE
= –4V
Ta
= 150ºC
(Ta
= 25ºC)
VCC
= 12V
IB1
= – IB2
= 50mA
0 –0.5 –1.0 –1.5
■ IC
— VBE Temperature Characteristics (typ.)
0
–5
–4
–3
–2
–1
–6
IC (A)
VBE (V)
(VCE
= –4V)
20ms
10ms
1ms
–200mA –100mA
Ta
= 150ºC
75ºC
25ºC
–55ºC
Ta
= 150ºC
75ºC
25ºC
–55ºC
ton
tf
tstg
75ºC
25ºC
–55ºC
natural air cooling
Without heatsink
Equivalent Circuit Diagram
a) Part No.
b) Lot No.
(Unit: mm)
a
b
20.0max
2.54±0.25
0.89±0.15
8.0±0.5
6.3±0.2
0 to 0.15
3.0±0.2
0.25
9.8±0.3
1.0±0.3
19.56±0.2
6.8max
0.75
0.3+0.15
–0.05
+0.15
–0.05
16
Pin 1 8
9
4.0max
3.6±0.2
1.4±0.2
External Dimensions SMD-16A
14
1341315 16
2
11
56891012
7
Surface-mount Power Transistor Array SDC09
98
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO 65±5
Symbol Test Conditions Ratings Unit
ICBO µA
VCB
=
60V 10max
IEBO µA
VEB
=
6V 10max
VCEO V
IC
=
50mA 60 to 70
hFE VCE
=
1V, IC
=
1A 400 to 1500
VCE (sat) VIC
=
1.5A, IB
=
15mA 0.15max
VFEC VIFEC
=
6A 1.5max
Es/b mJL
=
10mH, single pulse 80min
VCEO V
V
65±5
VEBO V
6
ICA
6 (pulse 10
*
)
IBA
1
PTW
2.8
Tj ºC
150
Tstg ºC
–55 to +150
*
PW 100µs, Duty 1%
Absolute Maximum Ratings
Electrical Characteristics
a) Part No.
b) Lot No.
(Unit: mm)
a
b
20.0max
2.54±0.25
0.89±0.15
8.0±0.5
6.3±0.2
0 to 0.15
3.0±0.2
0.25
9.8±0.3
1.0±0.3
19.56±0.2
6.8max
0.75
0.3+0.15
–0.05
16
Pin 1 8
9
4.0max
3.6±0.2
1.4±0.2
External Dimensions SMD-16A
Equivalent Circuit Diagram
+0.15
–0.05
050–50 100 150
0
3
2
1
PT (W)
Ta (ºC)
6
5
50 • 50 • 1.6mm
Use substrate
42•31•1.0mm
Use substrate
■ PT
— Ta Derating
01234 5
■ IC
— VCE Characteristics
0
5
6
7
8
IC (A)
VCE (V)
4
3
2
1
1
0.1
10
0 0.5 1.0 1.5 2.0 2.5 3.0
■ ton•tstg•tf
— IC Characteristics
ton•tstg•tf (µsec)
IC (A)
0.01 0.1 1 10
■ hFE
— IC Temperature Characteristics
1000
100
50
5000
hFE
IC (A)
0.1 1 10 100 1000
0.05
0.1
1
10
j-a (ºC/W)
t (ms)
0.5 1 5 10 50 100
■ Safe Operating Area (Single pulse)
0.1
0.05
0.5
10
1
5
IC (A)
VCE (V)
20
0.0001 0.010.001 0.1
■ VCE (sat)
— IC Temperature Characteristics (typ.)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VCE (sat) (V)
IC (A)
1mA
3mA
5mA
10mA
20mA
IC/IB=100
VCE=1V
Ta=150ºC
(Use substrate 42•31•1m)
VCC=12V
IB1=–I
B2 =30mA
0 0.2 0.4 1.21.00.80.6
■ IC
— VBE Temperature Characteristics (typ.)
0
5
4
3
2
1
6
IC (A)
VBE (V)
(VCE
= 4V)
IB=
30mA
Ta=150ºC
100ºC
75ºC
25ºC
–55ºC
Ta=150ºC
100ºC
75ºC
25ºC
–55ºC
ton
tf
tstg
75ºC
100ºC
25ºC
–55ºC
1ms
10ms
0.5
ms
Ta=25ºC
■ j-a
— t Characteristics (Single pulse)
Absolute Maximum Ratings
Electrical Characteristics
Symbol Ratings
NPN PNP Unit
(Ta=25ºC) (Ta=25ºC)
VCBO 60 –55
–55
–6
–12
–3
Symbol Test Conditions
NPN PNP
Ratings Test Conditions Ratings Unit
ICBO µA
VCB
=
60V 100max
IEBO mA
VEB
=
6V 60max
VCEO V
IC = 25mA 60min
hFE
VCE
=
1V, IC
=
3A
150min
VCE (sat) V
IC
=
6A, IB
=
0.3A
0.35max
VFEC VIFEC
=
10A 2.5max
VCB
= –
55V –100max
VEB
= –
6V –60max
IC
= –
25mA –55min
VCE
= –
1V, IC
= –
3A
80min
IC
= –
6A, IB
= –
0.3A
–0.35max
IFEC
=
10A 2.5max
VCEO V
V
60
VEBO V
6
12
ICA
IBA
3
PTW
W
5 (Tc=25ºC, No Fin)
40 (Tc=25ºC)
Tj 150
Tstg
ºC
ºC
–55 to +150
84
9
7
10
3
6
12
111
2
R1: 500Ω Typ.
R2: 500Ω Typ.
R1
R2
5
Power Transistor Array SLA8004
99
Equivalent Circuit Diagram
a) Part No.
b) Lot No.
(Unit: mm)
3.2±0.15 •3.8
11• P2.54±0.1= (27.94)
3.2±0.15
31±0.2
4.8±0.2
1.7±0.1
2.45±0.2
4–(R1)
R
-
end
4±0.7
24.4±0.2
9.9±0.2
12.9±0.2
16±0.2
5±0.5
(3)
1.2±0.15
0.85
1.45±0.15
31.3±0.2
16.4±0.2
(Root dimension)
(Root dimension)
+0.2
–0.1 0.55
12345678910 1211
a
b
External Dimensions SLA 12pin (LF817)
+0.2
–0.1
■ IC
— VCE Characteristics (typ.)
0
0
–8
–4
–12
–6
–2
–10
–2–1 –3 –4 –5 –6
–
40mA
–60mA
–100mA
–
150mA
–20mA
–10mA
I
B
=
–200mA
VCE (V)
IC (A)
■ hFE
— IC Characteristics (typ.)
–0.02 –0.1 –1 –12
–10
2
10
300
100
Typ
IC (A)
hFE
(VCE
= –1V) (PNP)
(PNP)
■ hFE
— IC Temperature Characteristics (typ.)
–0.02 –0.1 –1 –12
–10
2
10
300
100
125ºC 25ºC
–
30ºC
(PNP)(VCE
= –1V)
IC (A)
hFE
■ VCE (sat)
— IB Characteristics (typ.)
0
–1.4
–1.0
–0.5
–7 –100–10 –1000 –3000
IB (mA)
VCE (sat) (V)
–1A
–3A
–6A
–9A
IC
= –12A
(PNP) (NPN)
■ IC
— VCE Characteristics (typ.)
0
0
4
2
8
6
12
10
246
200mA
I
B
= 10mA
20mA
40mA
60mA
100mA
150mA
VCE (V)
IC (A)
■ hFE
— IC Temperature Characteristics (typ.)
0.02 0.1 1 1012
3
5
50
10
100
400
25
ºC
–30
ºC
125ºC
(NPN)(VCE
= 1V)
IC (A)
hFE
■ hFE
— IC Characteristics (typ.)
0.02 0.1 1 10 12
3
5
50
10
100
400
Typ
(NPN)(VCE
= 1V)
IC (A)
hFE
■ VCE (sat)
— IB Characteristics (typ.)
0
1.0
1.3
0.5
510 100 30001000
IC
= 1A
12A
3A
6A
9A
IB (mA)
VCE (sat)
(V)
(NPN)
1.0
10.5±0.3
+0.1
–0.05
0.25+0.15
–0.05
2.5±0.2
14.74±0.2
7.5±0.2
2±0.2
13.04±0.2
1.27±0.25
20
110
11
0.4+0.15
–0.05
a
b
F1
3
18,19
F2
8
12,13
Surface-mount Power Transistor Array SPF0001
100
(Ta=25ºC) (Ta=25ºC)
Absolute Maximum Ratings
Electrical Characteristics External Dimensions SPF 20pin
Equivalent Circuit Diagram
Symbol Ratings Unit
VCBO 115±10 Symbol Test Conditions Ratings Unit
ICBO µA
VCB
=
105V
IEBO µA
VEB
=
6V
VCEO V
IC
=
50mA 105
hFE VCE
=
1V, IC
=
1A 400
VCE (sat) VIC
=
1.2A, IB
=
12mA
VFEC VIFEC
=
6A
Es/b mJL
=
10mH 45
115
800
0.08
1.25
10
max typmin
10
125
1500
0.12
1.5
VCEO V
V
115±10
VEBO V
6
ICA
±6 (pulse ±10)
2.5 (Ta
=
25ºC)
IBA
1
PTW
Tj ºC
150
Tstg ºC
–55 to +150
*
*
Use glass epoxy substrate (FR4) 70mm • 100mm •1.6mm
11
(4.7)
(3.05)
20
F1 F2
(2.4)
(11.43) 4-( 0.8)
(13.54)
10
1
a) Part No.
b) Lot No.
(Unit: mm)
Fin
thickness
0.001 0.01 0.1 1
■ VCE (sat)
— IB Temperature Characteristics (typ.)
0
0.25
0.5
VCE (sat) (V)
IB (A)
(VCE
= 1V)
(VCE
= 1V)
(IC
= 1.2A)
150°C
25°C
–
55°C
0.1 1 50.5 6
■ hFE
— IC Temperature Characteristics (typ.)
100
500
50
hFE
IC (A)
10
1000
■ IC
— VBE Temperature Characteristics (typ.)
0
3
2
1
4
5
6
IC (A)
VBE (V)
0 0.2 1.0 1.20.4 1.40.80.6 0 0.2 1.0 1.20.4 1.40.80.6
■ IC
— VEC Temperature Characteristics (typ.)
0
4
IC (A)
VEC (V)
2
10
8
6
0.00001 0.0001 0.001
0.01 0.1 101100
■ Transient thermal resistance characteristics
0.01
1
100
10
0.1
j-a• j-f (°C/W)
Power time (s)
(82•36•1mm at the time of mounting the
recommended pattern of the glass epoxy board)
110100 200
■ Safe Operating Area (single pulse)
0.1
IC (A)
VCE (V)
1
20
10
0.5ms
2 circuits operate
1 circuits operate
1 circuits
operate
2 circuits operate
j-f
j-a
1ms
150°C
25°C
–55°C
150°C
25°C
–55°C
150°C
25°C
–55°C
0
2
1
3
0 0.5 1 5
■ VCE (sat)
— IC Temperature Characteristics
VCE (sat) (V)
IC (A)
110100 400
■ VCE (sat)
— IB Temperature Characteristics
0
0.25
0.5
VCE (sat) (V)
IB (mA)
IC/IB
= 100
(IC
= 0.5A)
Ta
= 125ºC
75ºC
25ºC
–40ºC
Ta
= 125ºC
75ºC
25ºC
–40ºC
050 150100
0
10
PT (W)
Ta (ºC)
20
Without heatsink
With infinite heatsink
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO 35±5
Symbol Test Conditions Ratings Unit
ICBO µA
VCB
=
30V 10max
IEBO mA
VEB
=
6V 2.7max
VCEO V
IC
=
25mA 31 to 41
hFE VCE
=
4V, IC
=
0.7A 400min
VCE (sat) V
V
IC
=
0.5A, IB
=
5mA
IC
=
1A, IB
=
5mA
0.2max
0.5max
VFEC
RB
RBE
V
Ω
kΩ
IFEC
=
2A 2.5max
800±120
2.0±0.4
Es/b mJL
=
10mH, single pulse 50min
VCEO V
V
36±5
VEBO V
6
ICA
2 (pulse 3
*
)
3 (Ta=25ºC)
13.5 (Tc=25ºC)
IBmA
30
PTW
W
Tj ºC
150
Tstg ºC
–55 to +150
*
PW 1ms, Duty 25%
12
VCC
(V)
12
RL
(Ω)
1
IC
(A)
10
VBB1
(V)
–5
VBB2
(V)
5
IB1
(mA)
0
IB2
(mA)
1.0
ton
(µs)
8.5
tstg
(µs)
2.5
tf
(µs)
Absolute Maximum Ratings
Electrical Characteristics
Typical Switching Characteristics
RB
3
24
5
6
7
8
1RBE
01 4 5263
■ IC
— VCE Characteristics (typ.)
0
2
IC (A)
VCE (V)
1
3
0.01 0.1 40.5 1
■ hFE
— IC Temperature Characteristics
50
100
hFE
IC (A)
3000
1000
500
0 0.5 1.0 1.5 2.0
■ ton•tstg •tf
— IC Characteristics (typ.)
0.1
0.5
5
1
10
ton•tstg •tf (µS)
Ic (A)
50
151050
■ Safe Operating Area (single pulse)
0.5
0.1
1
5
IC (A)
VCE (V)
(per element)
IB
= 1mA
2mA
3mA
VCC
= 12V
IB
= 5mA
–IB
= 0A
(VCE
= 4V)
■ PT
— Ta Derating
10ms
1ms
110100 1000
■ j-a
— t Characteristics
1
5
10
j-a (ºC/W)
t (ms)
20
Single pulse
30mA
12mA
8mA
5mA
Ta
= 125ºC
75ºC
25ºC
–40ºC
tstg
ton
Without heatsink
natural air cooling
Power Transistor Array STA315A
101
tf
a) Part No.
b) Lot No.
(Unit: mm)
a
b
7•2.54=17.78±0.25
(2.54)
20.2±0.2
0.5±0.15
1.0±0.25
C1.5±0.5
4.0±0.2
1.2 ±0.2
0.5±0.15
1324
EBCB
5678
CBCE
9.0±0.2
2.3±0.2
11.3±0.2
4.7±0.5
External Dimensions STA3 (LF400A)
Equivalent Circuit Diagram
Absolute Maximum Ratings
Electrical Characteristics
Typical Switching Characteristics
0123
■ IC
— VCE Characteristics (typ.)
0
2
IC (A)
VCE (V)
1
3
0
2
1
4
3
0 0.5 1.0 1.5
■ IC
— VBE Temperature Characteristics (typ.)
IC (A)
VBE (V)
0.01 0.05 0.1 30.5 1
■ hFE
— IC Temperature Characteristics (typ.)
100
hFE
IC (A)
5000
1000
500
0.10.05 0.5 1 5
■ ton• tstg•tf
— IC Characteristics (typ.)
0.3
0.5
5
1
10
ton•tstg •tf (µS)
Ic (A)
20
2510 50
■ Safe Operating Area (single pulse)
0.5
0.2
1
5
IC (A)
VCE (V)
10 (per element)
0.002 0.01 0.05 0.1 0.4
■ VCE (sat)
— IB Temperature Characteristics
0
0.5
1
VCE (sat)
(V)
IB (A)
IB=1mA
2mA
3mA
VCE
= 12V
IB1
= – IB2
= 5mA
VCE
= 4V
(IC
= 1A)
(VCE
= 4V)
050 150100
■ PT
— Ta Derating
0
10
5
PT (W)
Ta (ºC)
15
Ta
= –55ºC
25ºC
75ºC
125ºC
10ms
1ms
100m
Ta
= 125ºC
75ºC
25ºC
–55ºC
0.1 1 10 100 1000 5000
■ j-a
— t Characteristics
0.1
0.5
1
5
10
j-a (ºC/W)
t (ms)
20
Single pulse
15mA
10mA
8mA
6mA
5mA
4mA
Ta
= 125ºC
75ºC
25ºC
–55ºC
tstg
tf
ton
Without heatsink (All circuits operate)
With infinite heatsink (All circuits operate)
DC (Tc=25ºC)
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO 35±5
Symbol Test Conditions Ratings Unit
ICBO µA
VCB
=
30V 10max
IEBO µA
VEB
=
6V 10max
VCEO V
IC
=
25mA 35±5
hFE VCE
=
4V, IC
=
0.5A 500min
VCE (sat) VIC
=
1A, IB
=
5mA 0.5max
Es/b mJL
=
10mH, single pulse 150min
VCEO V
V
35±5
VEBO V
6
ICA
3
2.5 (Ta=25ºC)
12 (Tc=25ºC)
IBA
1
PTW
W
Tj ºC
150
Tstg ºC
–55 to +150
12
VCC
(V)
12
RL
(Ω)
1
IC
(A)
10
VBB1
(V)
–5
VBB2
(V)
5
IB1
(mA)
5
IB2
(mA)
1.3
ton
(µs)
4.7
tstg
(µs)
1.2
tf
(µs)
2
4
3
7
5
6
Power Transistor Array STA335A
102
Equivalent Circuit Diagram
a) Part No.
b) Lot No.
(Unit: mm)
a
b
7•2.54=17.78±0.25
(2.54)
20.2±0.2
0.5±0.15
1.0±0.25
C1.5±0.5
4.0±0.2
1.2 ±0.2
0.5±0.15
1324
CBE
5678
EBC
9.0±0.2
2.3±0.2
11.3±0.2
4.7±0.5
External Dimensions STA3 (LF400A)
01 4 5263
■ IC
— VCE Characteristics (typ.)
0
2
IC (A)
VCE (V)
1
3
0.01 0.1 40.5 1
■ hFE
— IC Temperature Characteristics
50
100
hFE
IC (A)
3000
1000
500
0 0.5 1.0 1.5 2.0
■ ton•tstg•tf
— IC Characteristics (typ.)
0.1
0.5
5
1
10
ton• tstg•tf (µS)
Ic (A)
50
151050
■ Safe Operating Area (single pulse)
0.5
0.1
1
5
IC (A)
VCE (V)
(per element)
IB
= 1mA
2mA
3mA
VCC
= 12V
IB
= 5mA
–IB
= 0A
(VCE
= 4V)
050 150100
■ PT
— Ta Derating
0
10
PT (W)
Ta (ºC)
20
10ms
1ms
0
2
1
3
0 0.5 1 5
■ VCE (sat)
— IC Temperature Characteristics
VCE(sat) (V)
IC (A)
110100 400
■ VCE (sat)
— IB Temperature Characteristics
0
0.25
0.5
VCE(sat) (V)
IB (mA)
IC/IB
= 100
(IC
= 0.5A)
Ta
= 125ºC
75ºC
25ºC
–40ºC
Ta
= 125ºC
75ºC
25ºC
–40ºC
110100 1000
■ j-a
— t Characteristics
1
5
10
j-a (ºC/W)
t (ms)
20
Single pulse
30mA
12mA
8mA
5mA
Ta
= 125ºC
75ºC
25ºC
–40ºC
tstg
ton
Without heatsink
With infinite heatsink
Without heatsink
natural air cooling
RB
3
24
5
6
7
8
9
10
1RBE
Power Transistor Array STA415A
103
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO 35±5
Symbol Test Conditions Ratings Unit
ICBO µA
VCB
=
30V 10max
IEBO mA
VEB
=
6V 2.7max
VCEO V
IC
=
25mA 31 to 41
hFE VCE
=
4V, IC
=
0.7A 400min
VCE (sat) V
V
IC
=
0.5A, IB
=
5mA
IC
=
1A, IB
=
5mA
0.2max
0.5max
VFEC
RB
RBE
V
Ω
kΩ
IFEC
=
2A 2.5max
800±120
2.0±0.4
Es/b mJL
=
10mH, single pulse 50min
VCEO V
V
36±5
VEBO V
6
ICA
2 (pulse 3
*
)
4 (Ta
=
25ºC)
18 (Tc
=
25ºC)
IBmA
30
PTW
W
Tj ºC
150
Tstg ºC
–55 to +150
*
PW 1ms, Duty 25%
12
VCC
(V)
12
RL
(Ω)
1
IC
(A)
10
VBB1
(V)
–5
VBB2
(V)
5
IB1
(mA)
0
IB2
(mA)
1.0
ton
(µs)
8.5
tstg
(µs)
2.5
tf
(µs)
Absolute Maximum Ratings
Electrical Characteristics
Typical Switching Characteristics
tf
Equivalent Circuit Diagram
a) Part No.
b) Lot No.
(Unit: mm)
9 • 2.54=22.86±0.05
a
b
(2.54)
25.25±0.2
9.0±0.2
2.3±0.2
11.3±0.2
3.5 ±0.5
0.5±0.15
0±0.3
1.0±0.25
C1.5±0.5
4.0±0.2±
0.5±0.15
1.2±0.2
1324
EBCB
567 10
CBC E
89
BC
0±0.3
External Dimensions STA4 (LF412)
104
Symbol Ratings Unit
VCBO 60±10
VCEO V
V
60±10
VEBO V
6
ICP A
±10
(Pw 1ms, Du 50%)
3.2
(
Ta
=
25°C
)
18
(
Tc
=
25°C
)
PTW
Tj °C
150
Tstg °C
–40 to +15
ICA
±6
Equivalent Circuit Diagram
9•2.54 = 22.86±0.05
a
b
(2.54)
25.25±0.2
9.0±0.2
2.3±0.2
11.3±0.2
3.5 ±0.5
0.5±0.15
0±0.3
1.0±0.25
C1.5±0.5
4.0±0.2
0.5±0.15
1.2±0.2
1324
EBCB
567 10
CBC E
89
BC
0±0.3
(Ta=25ºC) (Ta=25ºC)
Absolute Maximum Ratings
Electrical Characteristics
Power Transistor Array STA460C
02345
5
4
3
2
1
0
VCE (V)
IB (mA) VBE (V) PW (ms)
IC (A)
■ IC
— VCE Characteristics (typ.)
■ VCE (sat)
— IB Temperature Characteristics (typ.)
■ PT
— Ta Derating ■ Safe Operating Area
■ hFE
— IC Characteristics (typ.) ■ hFE
— IC
Temperature Characteristics (typ.)
■
VCE (sat)
— IC
Temperature Characteristics (typ.)
8
9
10
6
7
1
IC (A)
50 100 150
Ta (ºC)
PT (W)
20
15
10
5
0
0–55 510 50100
VCE (V)
0.05
0.1
0.5
1
5
10
20
10.5
■ IC
— VBE Temperature Characteristics (typ.)
0.01 0.1 0.5 1 5 10
IC (A)
hFE
100
500
5000
1000
30
50
0.05 0.01 0.1 0.5 1 5 10
100
500
5000
1000
30
50
0.05 0.01 0.1 0.5 1 5 100.05
IC (A)
hFE
0
IC (A)
VCE (sat) (V)
0.5
0.75
0.25
I
B
= 30mA
20mA
10mA
5mA
3mA
1mA
typ Ta = 125°C
75°C
–55°C
25°C
Ta = –55°C
25°C
75°C
125°C
IC = 3 A
1.5A
0.5A
Ta = 125°C
25°C
–55°C
75°C
With infinite heatsink
Without heatsink
Silicone grease used
Vertical self-excitation
Single pulse
Without heatsink
Ta= 25°C
0.5ms
1ms
10ms
11050100 5005
0
VCE (sat) (V)
0.5
0.75
0.25
0 1.0
38
49
27
1.50.5
0
1
2
3
4
5
6
IC (A)
0.1 1 5 10
50 100
500 1000 2000
0.5
0.05
j-a (°C/W)
10
5
1
0.5
0.1
20
External Dimensions STA4 (LF412)
Symbol Test Conditions Ratings Unit
ICBO µA
VCB
=
50V
IEBO µA
VEB
=
6V
VCEO V
IC
=
50mA 50
hFE VCE
=
1V, IC
=
1A 700
VCE (sat) VIC
=
1.5A, IB
=
15mA
VFEC VIFEC
=
6A
Es/b mJL
=
10mH, single pulse 200
60
1500
0.09
1.25
10
max typmin
10
70
3000
0.15
1.5
a) Part No.
b) Lot No.
(Unit: mm)
■ j-a
— PW Characteristics
(VCE
= 1V)
(VCE
= 1V) (VCE
= 1V) (IC/IB
= 100)
012 534
■ IC
— VCE Characteristics (typ.)
0
5
4
3
2
IC (A)
VCE (V)
1
7
6
0
0.25
0.75
0.5
0.01 0.1 1 10
■ VCE (sat)
— IC Temperature Characteristics (typ.)
VCE (sat) (V)
IC (A)
0.01 0.1 101
■ hFE
— IC Temperature Characteristics (typ.)
50
hFE
IC (A)
2000
1000
500
100
0123
■ ton• tstg • tf
— IC Characteristics
0.1
0.5
1
ton•tstg•tf (µS)
Ic (A)
5
151050 100
■ Safe Operating Area (single pulse)
0.5
0.1
1
5
IC (A)
VCE (V)
20
10
0 0.5 1.0 1.5
■ IC
— VBE Temperature Characteristics (typ.)
0
6
5
4
3
2
1
IC (A)
VBE (V)
IB
= 1mA
3mA
VCC
= 12V
IB1
= – IB2
= 30mA
IC/IB
= 100
(VCE
= 1V)
(VCE
= 1V)
050 150100
0
10
15
5
PT (W)
Ta (ºC)
20
Ta
= –55ºC
25ºC
75ºC
125ºC
1ms
0.5ms
10ms
Ta
= 125ºC
75ºC
25ºC
–55ºC
0.1 1 10 100 2000
■ j-a
— t Characteristics
0.05
0.1
0.5
1
5
j-a (ºC/W)
t (ms)
10
Single pulse
10mA
30mA
20mA
5mA
Ta
= 125ºC
75ºC
25ºC
–55ºC tf
ton
Without heatsink
With infinite heatsink
tstg
Without heatsink
natural air cooling
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO 65±5
Symbol Test Conditions Ratings Unit
ICBO µA
VCB
=
60V 10max
IEBO µA
VEB
=
6V 10max
VCEO V
IC
=
50mA 60 to 70
hFE VCE
=
1V, IC
=
1A 400 to 1500
VCE (sat) VIC
=
1.5A, IB
=
15mA 0.15max
VFEC VIFEC
=
6A 1.5max
Es/b mJL
=
10mH, single pulse 80min
VCEO V
V
65±5
VEBO V
6
ICA
±6 (pulse ±10)
3.2 (Ta
=
25ºC)
18 (Tc
=
25ºC)
IBA
1
PTW
W
Tj ºC
150
Tstg ºC
–55 to +150
12
VCC
(V)
12
RL
(Ω)
1
IC
(A)
10
VBB1
(V)
–5
VBB2
(V)
30
IB1
(mA)
–30
IB2
(mA)
0.2
ton
(µs)
3.9
tstg
(µs)
0.2
tf
(µs)
Absolute Maximum Ratings
Electrical Characteristics
Typical Switching Characteristics
3
2
4
8
7
9
■ PT
— Ta Derating
Power Transistor Array STA461C
105
Equivalent Circuit Diagram
a) Part No.
b) Lot No.
(Unit: mm)
9•2.54=22.86±0.05
a
b
(2.54)
25.25±0.2
9.0±0.2
2.3±0.2
11.3±0.2
4.7±0.5
0.5±0.15
1.0±0.25
C1.5±0.5±
4.0±0.2
0.5±0.15
1.2±0.2
1324
BCE
567 10
B
89
CE
External Dimensions STA4 (LF400B)
Absolute Maximum Ratings
Electrical Characteristics
Typical Switching Characteristics
012 6534
0
5
4
3
2
IC (A)
VCE (V)
1
8
7
6
0
0.25
0.75
0.5
0.01 0.1 1 5
VCE (sat) (V)
IC (A)
0.01 0.1 101
30
50
hFE
IC (A)
2000
1000
500
100
0123
0.1
0.5
1
ton•tstg•tf (µS)
Ic (A)
10
5
(Tc
= 25ºC)
0 0.5 1.0 1.5
0
7
6
5
4
3
2
1
IC (A)
VBE (V)
IB
= 1mA
3mA
VCC
= 12V
IB1
= – IB2
= 30mA
IC/IB
= 100
(VCE
= 1V)
(VCE
= 4V)
050 150100
0
10
5
PT (W)
Ta (ºC)
20
15
Ta
= –55ºC
25ºC
75ºC
150ºC
0
0.25
0.75
0.5
110100 1000
VCE (sat) (V)
IB (mA)
IC
= 1.2A
Ta
= 150ºC
75ºC
25ºC
–55ºC
Ta
= 150ºC
75ºC
25ºC
–55ºC
0.0001 10.10.010.001 10 100 1000
0.1
0.5
1
5
10
50
j-a (ºC/W)
t (s)
100
Single pulse
10mA
30mA
20mA
5mA
Ta
= 150ºC
75ºC
25ºC
–55ºC tf
ton
Without heatsink
With infinite heatsink
tstg
Dual
transistor
operated Single
transistor
operated
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO 115±10
Symbol Test Conditions Ratings Unit
ICBO µA
VCB
=
105V 10max
IEBO µA
VEB
=
6V 10max
VCEO V
IC
=
50mA 105 to 125
hFE VCE
=
1V, IC
=
1A 400 to 1500
VCE (sat) VIC
=
1.2A, IB
=
12mA 0.12max
VFEC VIFEC
=
6A 1.5max
Es/b mJL
=
10mH, single pulse 45min
VCEO V
V
115±10
VEBO V
6
ICA
±6 (pulse ±10)
3.2 (Ta=250ºC)
18 (Tc=25ºC)
IBA
1
PTW
W
Tj ºC
150
Tstg ºC
–55 to +150
12
VCC
(V)
12
RL
(Ω)
1
IC
(A)
10
VBB1
(V)
–5
VBB2
(V)
30
IB1
(mA)
–30
IB2
(mA)
0.2
ton
(µs)
5.7
tstg
(µs)
0.4
tf
(µs)
3
2
4
8
7
9
■ IC
— VCE Characteristics (typ.) ■ VCE (sat)
— IC
Temperature Characteristics (typ.)
■ VCE (sat)
— IB
Temperature Characteristics (typ.)
■ hFE
— IC Temperature Characteristics (typ.) ■ ton • tstg •tf
— IC Characteristics
■ IC
— VBE Temperature Characteristics (typ.)
■ j-a
— t Characteristics
■ PT
— Ta Derating
Power Transistor Array STA463C
Equivalent Circuit Diagram
a) Part No.
b) Lot No.
(Unit: mm)
9•2.54= 22.86±0.05
a
b
(2.54)
25.25±0.2
9.0±0.2
2.3±0.2
11.3±0.2
4.7±0.5
0.5±0.15
1.0±0.25
C1.5±0.5
4.0±0.2
0.5±0.15
1.2±0.2
1324
BCE
567 10
B
89
CE
External Dimensions STA4 (LF400B)
106
107
Absolute Maximum Ratings
Electrical Characteristics
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO 65±5Symbol Test Conditions Ratings Unit
ICBO µA
VCB
=
60V
IEBO µA
VEB
=
6V
VCEO V
IC
=
50mA 60
hFE VCE
=
1V, IC
=
1A 400
VCE (sat) VIC
=
1.5A, IB
=
15mA
VFEC VIFEC
=
6A
Es/b mJL
=
10mH 80
65
800
0.09
1.25
10
max typmin
10
70
1500
0.15
1.5
VCEO V
V
65±5
VEBO V
6
ICA
6 (pulse 10)
20 (Tc=25ºC)
4 (Ta=25ºC)
IBA
1
PCW
Tj ºC
150
Tstg ºC
–55 to +150
3
2
1
5
4
7
6
9
8
10
Power Transistor Array STA464C
Equivalent Circuit Diagram
a) Part No.
b) Lot No.
(Unit: mm)
9•2.54= (22.86)±0.05
a
b
(2.54)
25.25±0.2
9.0±0.2
2.3±0.2
11.3±0.2
3.5±0.5
0.5±0.15
1.0±0.25
C1.5±0.5
4.0±0.2
0.5±0.15
1.2±0.2
1324
BBCBCCE
567 10
B
89
CE
External Dimensions STA4
(Root dimension)
012 534
■ IC
— VCE Characteristics (typ.)
0
5
4
3
2
IC (A)
VCE (V)
1
7
6
0
0.25
0.75
0.5
0.01 0.1 1 10
■ VCE (sat)
— IC
Temperature Characteristics (typ.)
VCE (sat) (V)
IC (A)
0.01 0.1 101
■ hFE
— IC Temperature Characteristics (typ.)
50
hFE
IC (A)
2000
1000
500
100
0123
■ ton • tstg •tf
— IC Characteristics
0.1
0.5
1
ton•tstg•tf (µS)
Ic (A)
5
151050 100
■ Safe Operating Area (single pulse)
0.5
0.1
1
5
IC (A)
VCE (V)
20
10
0 0.5 1.0 1.5
■ IC
— VBE Temperature Characteristics (typ.)
0
6
5
4
3
2
1
IC (A)
VBE (V)
IB
= 1mA
3mA
VCC
= 12V
IB1
= – IB2
= 30mA
IC/IB
= 100
(VCE
= 1V)
(VCE
= 1V)
050 150100
0
10
15
5
PT (W)
Ta (ºC)
20
Ta= –55ºC
25ºC
75ºC
125ºC
1ms
0.5ms
10ms
Ta
= 125ºC
75ºC
25ºC
–55ºC
10mA
30mA
20mA
5mA
Ta
= 125ºC
75ºC
25ºC
–55ºC tf
ton
Without heatsink
With infinite heatsink
tstg
Without heatsink
natural air cooling
■ PT
— Ta Derating
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VDSS 60 Symbol Test Conditions Ratings Unit
V(BR) DSS ID
=
100µA60
min typ max
IGSS µA
µA
VGS
=
±20V ±10
IDSS
V
VDS
=
60V, VGS
=
0V 100
VTH VDS
=
10V, ID
=
250µA42
RDS (ON) mΩ
V
ns
V
VGS
=
10V, ID
=
35A
Coss
Ciss VDS
=
10V
VGS
=
10V
f
=
1.0MHz
Crss
trr
VSD ISD
=
50A
ISD
=
25A, di/dt
=
50A/µs
5.0 6.0
pF
pF
pF
9400
1400
1100
0.9
110
1.5
VGSS V
V
20
70
140
IDA
ID (pulse) A
130
PD
Tch
W
400
EAS mJ
150
Tstg ºC
ºC
–55 to +150
Absolute Maximum Ratings
Features
● ON resistance 0.0060Ω max.
● Built-in G-S bidirectional Zener diode
● Trench MOS structure
Applications
● Power steering motor
● Various motors
● Replaces mechanical relays
Electrical Characteristics
MOS FET 2SK3710 (under development)
External Dimensions
TO220S
0.4
±0.1
(5)
(5.4)
(1.4)
(1.3)
(1.5)
(0.45)
4.44±0.2
1.3±0.2
2.6±0.2
9.1±0.3
2.54±0.1
1.4±0.2
2.54±0.1
10.2±0.3
1.2±0.2
0.86+0.2
–0.1
10.5+0.3
–0.5
3+0.3
–0.5
0.1+0.2
–0.1
123 Details of the back (S=2 /1)
108
(Unit: mm)
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VDSS 60 Symbol Test Conditions Ratings Unit
V(BR) DSS ID
=
100µA60
min typ max
IGSS µA
µA
VGS
=
+20V ±10
IDSS
V
VDS
=
60V, VGS
=
0V 100
VTH VDS
=
10V, ID
=
250µA42
RDS (ON) mΩ
V
ns
V
VGS
=
10V, ID
=
35A
Coss
Ciss VDS
=
10V
VGS
=
10V
f
=
1.0MHz
Crss
trr
VSD ISD
=
50A
ISD
=
25A, di/dt
=
50A/µs
5.0 6.0
pF
pF
pF
0.9
70
7800
1250
990
1.2
VGSS V
V
20
70
140
IDA
ID (pulse) A
130
PD
Tch
W
To be defined
EAS mJ
150
Tstg ºC
ºC
–55 to +150
Absolute Maximum Ratings
Electrical Characteristics
MOS FET 2SK3711
109
External Dimensions
TO-3P
Features
● ON resistance 0.006Ω max.
● Built-in G-S bidirectional Zener diode
● Trench MOS structure
Applications
● Power steering motor
● Various motors
● Replaces mechanical relays
* 1: PW 100µs, duty cycle 1%
* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped,
RG = 5 0 Ω
* Contact your sales rep for the details of warranty
at Tch = 175°C
(1) (2) (3)
15.8±0.2
1. Gate
2. Drain
3. Source
1.4
2
3
15.6±0.4
13.6 4.8±0.2
2.0±0.1
3.2±0.1
5.0±0.2
9.6
1.8
20.0 min
4.0 max
19.9±0.3
4.0 2.0
1.05+0.2
–0.1 0.65+0.2
–0.1
5.45±0.1 5.45±0.1
01
10
0
VDS (V)
ID (A)
■ ID
— VDS Characteristics
(typ.)
■ RDS (ON) — ID
Characteristics
(typ.)
■ Capacitance
— VDS Characteristics ■ IDR
— VSD Characteristics
■ ID
— VGS Characteristics
(typ.)
■ VDS
— VGS Characteristics
(typ.)
■ Re (y fs) — ID Characteristics
(typ.)
40
50
60
70
80
20
30
0.5
020304050 7060
2.0
1.0
0
ID (A)
RDS (ON) (mΩ)
IDR (A)
6.0
7.0
3.0
5.0
4.0
10
20 30 5040
VDS (V)
Capacitance (pF)
50000
1000
10000
100
100 0.4 0.6 0.8 1.0 1.41.2
VSD (V)
0
10
20
30
40
50
70
60
0.20
■ Safe Operating Area (single pulse)
IC (A)
110100
VDS (V)
0.1
1
10
100
500
0.1
■ PD
— TC Characteristics
PD
(W)
50 100 150
Tc (ºC)
0
20
40
100
80
60
120
140
0
■ RDS (ON) — TC
Characteristics
(typ.)
050100 150
4.0
2.0
0
Tc (ºC)
RDS (ON) (mΩ)
10.0
12.0
6.0
8.0
–50–60 0.01 0.1 1 10010
0.1
0.01
Pw (sec)
10
1
0.0010.0001
0468
10
0
VGS (V)
ID (A)
40
50
80
70
60
20
30
201015 20
0.2
0
VGS (V)
VDS (V)
0.6
0.8
1.0
0.4
511070
1
ID (A)
Re (yfs) (S)
100
500
10
10V
8V
6V
VGS = 5 V
(Ta
= 25ºC) (VDS
= 10V)
(Ta
= 25ºC)
Tc = 150°C
100°C
50°C
25°C
0°C
–40°C
ID = 70A
35A
(VDS
= 10V)
Tc = –55°C
25°C
150°C
Ciss
Coss
Crss
VGS = 0 V
f = 1 MHz
(Ta
= 25ºC) (With infinite heatsink)(Ta
= 25ºC)
I
D
(pulse) max
500µs
(
1shot
)
1ms
(
1shot
)
10ms
(
1shot
)
R
DS
(ON)
LIMITED
Tc = 150°C
25°C
–55°C
VGS
= 10V
Ta
= 25ºC VGS
= 10V
ID
= 35A ■ j-c
— Pw Characteristics
j-c
(ºC/W)
a) Part No.
b) Lot No.
(Unit: mm)
a
b
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VDSS 60 Symbol Test Conditions Ratings Unit
V(BR) DSS ID
=
100µA60
min typ max
IGSS µA
µA
VGS
=
±20V ±10
IDSS
V
VDS
=
60V, VGS
=
0V 100
VTH VDS
=
10V, ID
=
1mA 21
RDS (ON) mΩ
V
ns
V
VGS
=
10V, ID
=
40A
Coss
Ciss VDS
=
10V
VGS
=
10V
f
=
1.0MHz
Crss
trr
VSD ISD
=
50A
ISD
=
25A, di/dt
=
50A/µs
4.0 5.0
pF
pF
pF
10600
1600
1300
0.9
To be defined
1.5
VGSS V
V
20
80
160
IDA
ID (pulse) A
60
PD
Tch
*
W
To be defined
EAS mJ
150
Tstg ºC
ºC
–55 to +150
Absolute Maximum Ratings
Electrical Characteristics
MOS FET 2SK3724 (under development)
External Dimensions
TO220S
0.4
±0.1
(5)
(5.4)
(1.4)
(1.3)
(1.5)
(0.45)
4.44±0.2
1.3±0.2
2.6±0.2
9.1±0.3
2.54±0.1
1.4±0.2
2.54±0.1
10.2±0.3
1.2±0.2
0.86+0.2
–0.1
10.5+0.3
–0.5
3+0.3
–0.5
0.1+0.2
–0.1
123 Details of the back (S=2 /1)
Features
● ON resistance 0.005Ω max.
● Built-in G-S bidirectional Zener diode
● Trench MOS structure
Applications
● Power steering motor
● Various motors
● Replaces mechanical relays
* Contact your sales rep for the details of warranty
at Tch = 175°C
110
(Unit: mm)
Absolute Maximum Ratings
Electrical Characteristics
(Ta=25ºC) (Ta=25ºC)
MOS FET 2SK3800
External Dimensions TO220S
0.4
±
0.1
(5)
(5.4)
(1.4)
(1.3)
(1.5)
(0.45)
4.44±0.2
1.3±0.2
2.6±0.2
9.1±0.3
2.54±0.1
1.4±0.2
2.54±0.1
10.2±0.3
1.2±0.2
0.86+0.2
–0.1
10.5+0.3
–0.5
3+0.3
–0.5
0.1+0.2
–0.1
123
111
Symbol Test Conditions Ratings Unit
V(BR) DSS ID = 100µA, VGS = 0 V 40
min typ max
IGSS µA
µA
VGS = ±15V ±10
IDSS
V
VDS = 40V, VGS = 0 V 100
VTH VDS = 10V, ID = 1mA 4.02.0
30
RDS (ON)
Re (yfs)
mΩ
V
S
ns
V
VGS = 10V, ID = 35A
VDS = 10V, ID = 35A
Coss
Ciss VDS = 10V
f = 1.0MHz
VGS = 0 V
Crss
trr
VSD ISD = 50A, VGS = 0 V
ISD = 25A, di/dt = 50A/µs
5.0
50
3.0
6.0
td (on) ns
ID = 35A 100
trns
VDD = 20V, RG = 2 2 Ω100
td (off)ns
RL = 0.57Ω, VGS = 10V 300
tfns130
Rth (ch-c)ºC/W1.56
Rth (ch-a)ºC/W62.5
pF
pF
pF
5100
1200
860
0.9
110
1.2
Symbol Ratings Unit
VDSS 40
VGSS V
V
±20
±70
±140
IDA
I
D (pulse)
*1
A
80 (Tc=25ºC)
PD
EAS
*2
W
400
Tstg ºC
mJ
Tch 150 ºC
–40 to +150
*
1: PW 100µs, duty cycle 1%
*
2: VDD = 20V, L = 1mH, IL = 20A, unclamped,
RG = 5 0 Ω
0 2.01.5
10
0
VDS (V)
ID (A)
■ ID
— VDS Characteristics
(typ.)
■ RDS (ON) — ID
Characteristics
(typ.)
■
Capacitance
— V
DS
Characteristics
(typ.)
■ IDR
— VSD Characteristics
(typ.)
■ ID
— VGS Characteristics
(typ.)
■ VDS
— VGS Characteristics
(typ.)
■ Re (y fs) — ID Characteristics
(typ.)
40
50
60
70
20
30
1.00.5
020304050 7060
2.0
1.0
0
ID (A)
RDS (ON) (mΩ)
IDR (A)
6.0
7.0
3.0
5.0
4.0
10
20 30 5040
VDS (V)
Capacitance (pF)
50000
1000
10000
100
100 0.4 0.6 0.8 1.0 1.41.2
VSD (V)
0
10
20
30
40
50
70
60
0.20
■ Safe Operating Area (single pulse)
IC (A)
110100
VDS (V)
0.1
1
10
100
500
0.1
■ PD
— TC Characteristics
PD
(W)
40 806020 100 120 140 160
Tc (ºC)
0
20
10
40
30
70
60
50
80
90
0
■ RDS (ON) — TC
Characteristics
(typ.)
■ Dynamic I/O Characteristics (typ.)
050100 150
4.0
2.0
0
Tc (ºC)
RDS (ON) (mΩ)
10.0
12.0
6.0
8.0
–50–60
0.01
0.1 1 10010
0.1
0.01
t (s)
10
1
0.0001 0.0010.00001
0 3.02.0 5.04.0 7.06.0
10
0
VGS (V)
ID (A)
40
50
70
60
20
30
1.0 0 10 1520
0.2
0
VGS (V)
VDS (V)
0.6
0.8
1.0
0.4
511070
1
ID (A)
Re (yfs) (S)
100
500
10
10V
5.5V
5.0V
VGS = 4.5V
(Ta
= 25ºC)
(VDS
= 10V)
(Ta
= 25ºC)
Ta = 150°C
25°C
–55°C
(ID = 35A)
ID = 70A
35A
(VDS
= 10V)
Tc = –5 5 °C
25°C
150°C
Ciss
Coss
Crss
VGS = 0V
f = 1MHz
(Ta
= 25ºC)
R
DS (ON)
LIMITED
100 150
10
0
Qg (nC)
30
20
5
0
15
10
500
VDS (V)
VGS (V)
Ta = 150°C
25°C
–55°C
VDD = 8V
12V
14V
16V
24V
VDS
VGS
PT=
1ms
PT=
100µs
PT
=10ms
P
T
=
10µs
Details of the back (S=2/1)
■ j-c
— t
Characteristics (Single pulse)
VGS
= 10V
Ta
= 25ºC
VGS
= 10V
ID
= 35A
j-c
(ºC/W)
(Unit: mm)
112
MOS FET 2SK3801
External Dimensions TO-3P
Absolute Maximum Ratings
Electrical Characteristics
(Ta=25ºC) (Ta=25ºC)
Symbol Test Conditions Ratings Unit
V(BR) DSS ID = 100µA, VGS = 0 V 40
min typ max
IGSS µA
µA
VGS = ±15V ±10
IDSS
V
VDS = 40V, VGS = 0 V 100
VTH VDS = 10V, ID = 1mA 4.02.0
30
RDS (ON)
Re (yfs)
mΩ
V
S
ns
V
VGS = 10V, ID = 35A
VDS = 10V, ID = 35A
Coss
Ciss VDS = 10V
f = 1.0MHz
VGS = 0 V
Crss
trr
VSD ISD = 50A, VGS = 0 V
ISD = 25A, di/dt = 50A/µs
5.0
50
3.0
6.0
td (on) ns
ID = 35A 100
trns
VDD = 20V, RG = 2 2 Ω100
td (off) ns
RL = 0.57Ω, VGS = 10V 300
tfns130
Rth (ch-c) °C/W1.25
Rth (ch-a) °C/W35.71
pF
pF
pF
5100
1200
860
0.9
100
1.5
Symbol Ratings Unit
VDSS 40
VGSS V
V
±20
±70
±140
IDA
ID (pulse)
*1
A
100 (Tc=25ºC)
PD
EAS
*1
W
400
Tstg ºC
mJ
Tch 150 ºC
–40 to +150
*
1: PW 100µs, duty cycle 1%
*
2: VDD = 20V, L = 1mH, IL = 20A, unclamped,
RG = 5 0 Ω
(1) (2) (3)
15.8±0.2
1. Gate
2. Drain
3. Source
1.4
2
3
15.6±0.4
13.6 4.8±0.2
2.0±0.1
3.2±0.1
5.0±0.2
9.6
1.8
20.0 min
4.0 max
19.9±0.3
4.0 2.0
1.05+0.2
–0.1 0.65+0.2
–0.1
5.45±0.1 5.45±0.1
0 2.01.5
10
0
VDS (V)
ID (A)
■ ID
— VDS Characteristics
(typ.)
■ RDS (ON) — ID
Characteristics
(typ.)
■
Capacitance
— V
DS
Characteristics
(typ.)
■ IDR
— VSD Characteristics
(typ.)
■ ID
— VGS Characteristics
(typ.)
■ VDS
— VGS Characteristics
(typ.)
■ Re (y fs) — ID Characteristics
(typ.)
40
50
60
70
20
30
1.00.5
020304050 7060
2.0
1.0
0
ID (A)
RDS (ON) (mΩ)
IDR (A)
6.0
7.0
3.0
5.0
4.0
10
20 30 5040
VDS (V)
Capacitance (pF)
50000
1000
10000
100
100 0.4 0.6 0.8 1.0 1.41.2
VSD (V)
0
10
20
30
40
50
70
60
0.20
■ Safe Operating Area (single pulse)
IC (A)
110100
VDS (V)
0.1
1
10
100
500
0.1
■ PD
— TC Characteristics
PD
(W)
40 806020 100 120 140 160
Tc (ºC)
0
20
40
60
100
80
120
0
■ RDS (ON) — TC
Characteristics
(typ.)
050100 150
4.0
2.0
0
Tc (ºC)
RDS (ON) (mΩ)
10.0
6.0
8.0
–50–60
0.01
0.1 1 10010
0.1
0.01
Pw (s)
10
1
0.0001 0.0010.00001
0 3.02.0 5.04.0 7.06.0
10
0
VGS (V)
ID (A)
40
50
70
60
20
30
1.0 0 10 1520
0.2
0
VGS (V)
VDS (V)
0.6
0.8
1.0
0.4
511070
1
ID (A)
Re (yfs) (S)
100
1000
10
10V
5.5V
5.0V
VGS = 4.5V
(Ta
= 25ºC)
(VDS
= 10V)
(Ta
= 25ºC)
Ta = 150°C
25°C
–55°C
(ID = 35 A)
ID = 70A
35A
(VDS
= 10V)
Tc = – 5 5 °C
25°C
150°C
Ciss
Coss
Crss
VGS = 0 V
f = 1 MHz
(Ta
= 25ºC)
R
DS (ON)
LIMITED
■ Dynamic I/O Characteristics (typ.)
100 150
Qg (nC)
500
VDS (V)
Ta = 150°C
25°C
–55°C
VDD = 8V
12V
14V
16V
24V
VDS
VGS
PT=
1ms
PT=
100µs
PT
=10ms
PT=
10µs
10
0
30
20
5
0
15
10
VGS (V)
a) Part No.
b) Lot No.
(Unit: mm)
a
b
■ j-c
— Pw
Characteristics (Single pulse)
VGS
= 10V
Ta
= 25ºC
VGS
= 10V
ID
= 35A
j-c
(ºC/W)
113
Absolute Maximum Ratings
Electrical Characteristics
(Ta=25ºC) (Ta=25ºC)
MOS FET 2SK3803 (under development)
External Dimensions TO220S
Symbol Test Conditions Ratings Unit
V(BR) DSS ID = 100µA, VGS = 0 V 40
min typ max
IGSS µA
µA
VGS = ±15V ±10
IDSS
V
VDS = 40V, VGS = 0 V 100
VTH VDS = 10V, ID = 1mA 4.02.0
50
RDS (ON)
Re (yfs)
mΩ
V
S
ns
V
VGS = 10V, ID = 42A
VDS = 10V, ID = 42A
Coss
Ciss VDS = 10V
f = 1.0MHz
VGS = 0 V
Crss
trr
VSD ISD = 50A, VGS = 0 V
ISD = 25A, di/dt = 50A/µs
2.1 3.0
td (on) ns
ID = 42A 90
trns
VDD = 20V, RG = 2 2 Ω230
td (off)ns
VGS = 10V 490
tfns760
pF
pF
pF
10500
2400
1900
0.85
90
1.2
Symbol Ratings Unit
VDSS 40
VGSS V
V
±20
±85
±170
IDA
ID (pulse)
*1
A
100 (Tc=25ºC)
PD
EAS
*2
W
730
Tstg ºC
mJ
Tch 150 ºC
–55 to +150
10.2±0.3
1.27±0.2
2.54±0.5
2.54±0.5
1.2±0.2
1.6
10.0
8.6±0.3 (1.4)
–0.5
+0.3
3.0–0.5
+0.3
0.86 –0.1
+0.2
4.44±0.2
1.3±0.2
0.4±0.1
(1.5)
0.1–0.1
+0.2
*
1: PW 100µs, duty cycle 1%
*
2: VDD = 20V, L = 1mH, IL = 20A, unclamped,
RG = 5 0 Ω
a) Part No.
b) Lot No.
(Unit: mm)
a
b
114
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VDSS 60 Symbol Test Conditions Ratings Unit
V(BR) DSS ID = 100µA, VGS = 0 V 60
min typ max
IGSS µA
µA
VGS = ±20V ±10
IDSS
S
V
VDS = 60V, VGS = 0 V 100
VTH VDS = 10V, ID = 1mA 3.02.52.0
Re (yfs) VDS = 10V, ID = 42A 30
RDS (ON) mΩ
V
ns
ns
ns
ns
V
ns
VGS = 10V, ID = 42A
Coss
Ciss VDS = 10V
f = 1.0MHz
VGS = 0 V
Crss
td (on) ID = 42A
VDD 16V
RG = 2 2 Ω
VGS = 10V
tr
trr
td (off)
tf
ISD = 50A, di/dt = 100A/µS
VSD ISD = 50A, VGS = 0 V
4.0 4.7
pF
pF
pF
11500
1500
1100
60
25
370
65
70
0.87 1.5
VGSS V
V
±20
±85
±280
IDA
I
D (pulse)
*1
A
150
PD
EAS
*2
W
280
Tstg ºC
mJ
Tch 150 ºC
–55 to +150
Absolute Maximum Ratings
Electrical Characteristics
MOS FET 2SK3851
External Dimensions TO-3P
0 0.8 1.2 1.6 2.0
10
0
VDS (V)
ID (A)
60
80
70
90
30
20
40
50
0.4
0708090
0
ID (A)
RDS (ON) (mΩ)
IDR (A)
1.0
5.0
7.0
6.0
8.0
5.0
4.0
3.0
2.0
1.0
0
6.0
4.0
3.0
2.0
20 30 40 50 6010
30 5040 60
VDS (V)
Capacitance (pF)
10000
1000
50000
500
10 200 0.2 0.4 0.80.6 1.0 1.2 1.4
VSD (V)
30
20
10
0
70
60
50
40
80
90
0
PD
(W)
50 75 100 125 150
Tc (ºC)
20
0
40
140
120
100
80
60
160
250
■ ID
— VDS Characteristics
■ RDS (ON) — ID Characteristics
■ Capacitance
— VDS Characteristics ■ IDR
— VSD Characteristics
■ ID
— VGS Characteristics ■ VDS
— VGS Characteristics ■ Re (y fs) — ID Characteristics
■ PD
— TC Characteristics
■ RDS (ON) — TC Characteristics
050100 150
Tc (ºC)
RDS (ON) (mΩ)
–50–100 0.01 0.1 1 10
0.1
0.01
t (s)
10
1
0.0010.0001
032456
VGS (V)
ID (A)
80
100
40
20
0
60
1081012141618
VGS (V)
VDS (V)
1.0
0.6
0.8
0.4
0.2
0
46211050 100
10
1
ID (A)
Re (yfs) (S)
100
500
5
10V
4.5V
VGS = 4.0V
(Ta
= 25ºC) (Ta
= 25ºC)(VDS
= 10V) (VDS
= 10V)
Ta = 150°C
25°C
–55°C
–55°C
25°C
150°C
(Ta
= 25ºC)
Ta = 2 5 °C
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
ID = 85A
ID = 42A
Ta = 150°C
25°C
–55°C
(1) (2) (3)
15.8±0.2
1. Gate
2. Drain
3. Source
1.4
2
3
15.6±0.4
13.6 4.8±0.2
2.0±0.1
3.2±0.1
5.0±0.2
9.6
1.8
20.0 min
4.0 max
19.9±0.3
4.0 2.0
1.05+0.2
–0.1 0.65+0.2
–0.1
5.45±0.1 5.45±0.1
*
1: PW 100µs, duty cycle 1%
*
2: VDD = 20V, L = 1mH, IL = 20A, unclamped
a) Part No.
b) Lot No.
(Unit: mm)
a
b
VGS
= 10V
Ta
= 25ºC VGS
= 10V
ID
= 25A
■ j-c
— t Characteristics (Single pulse)
j-c (ºC/W)
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VDSS 40 Symbol Test Conditions Ratings Unit
V(BR) DSS ID
=
100µA, VGS
=
0V 40
min typ max
IGSS µA
µA
VGS
= +
20V +10
VGS
= –
10V –5
IDSS
S
V
VDS
=
40V, VGS
=
0V 100
VTH VDS
=
10V, ID
=
250µA 2.3 1.3
Re (yfs) VDS
=
10V, ID
=
25A 20.0
RDS (ON) mΩ
V
ns
ns
ns
ns
V
VGS
=
10V, ID
=
25A
Coss
Ciss VDS
=
10V
f
=
1.0MHz
VGS
=
0V
Crss
td (on) ID
=
25A
VDD
=
12V
RL
=
0.48Ω
VGS
=
10V
tr
td (off)
tf
VSD ISD
=
50A, VGS
=
0V
7 9
pF
pF
pF
2800
1400
600
20
600
250
100
1.0 1.5
VGSS V
V
+20, –10
±60
±180
IDA
ID (pulse)
*
A
60 (Tc=25ºC)
PD
Tch
W
150
Tstg ºC
ºC
–55 to +150
*
PW 100µs, duty 1%
Absolute Maximum Ratings
Electrical Characteristics
MOS FET FKV460S
115
a) Part No.
b) Lot No.
(Unit: mm)
External Dimensions TO220S
a
b
10.2±0.3
1.27±0.2
2.54±0.5
2.54±0.5
1.2±0.2
1.6
10.0
8.6±0.3 (1.4)
–0.5
+0.3
–0.5
+0.3
3.0
0.86
4.44±0.2
1.3±0.2
0.4±0.1
(1.5)
0.1–0.1
+0.2
–0.1
+0.2
02345
10
0
VDS (V)
ID (A)
■ ID
— VDS Characteristics
(typ.)
■ RDS (ON) — ID Characteristics
■ Capacitance
— VDS Characteristics ■ IDR
— VSD Characteristics
■ ID
— VGS Characteristics
(typ.)
■ VDS
— VGS Characteristics
(typ.)
■ Re (y fs) — ID Characteristics
40
50
60
20
30
1
02030405060
4.0
2.0
0
ID (A)
RDS (ON) (mΩ)
IDR (A)
12
14
6.0
10
8.0
10
20 30 35
VDS (V)
Capacitance (pF)
10000
1000
100
100 0.4 0.6 0.8 1.0 1.2
VSD (V)
0
10
20
30
40
50
60
0.20
■ Safe Operating Area (single pulse)
IC (A)
11050
VDS (V)
0.1
1
10
100
200
0.1
■ PD
— TC Characteristics
PD
(W)
50 75 100 125 150
Tc (ºC)
0
10
20
50
40
30
60
70
250
■ RDS (ON) — TC Characteristics
050100 150
4.0
2.0
0
Tc (ºC)
RDS (ON) (mΩ)
12
14
6.0
10
8.0
–
50
–
60 0.01 0.1 1 10
0.1
0.01
t (s)
50
10
1
0.0010.0001
0234
10
0
VGS (V)
ID (A)
40
50
70
60
20
30
101015 20
0.2
0
VGS (V)
VDS (V)
0.6
0.8
1.0
0.4
511060
5
50
ID (A)
Re (yfs) (S)
100
500
10
5
3.5V
10V
5.0V
4.0V
VGS
= 3.0V
(Ta
= 25ºC) (Ta
= 25ºC)
(Ta
= 25ºC) (Ta
= 25ºC)
(VDS
= 10V)
Ta
= 150ºC
25ºC
–
55ºC
FR4 (70 •100 • 1.6mm)
Use substrate
ID
= 60A
25A
10A
(VDS
= 10V)
–
55ºC
25ºC
150ºC
Ciss
Coss
Crss
VGS
= 0 V
f
= 1 M Hz
5V
10V
VGS
=
1
0V
(Ta
= 25ºC)
I
D
(pulse) max
PT=1ms
P
T
=10ms
R
DS(ON)
LIMITED
VGS
= 10V
Ta
= 25ºC VGS
= 10V
ID
= 25A
■ j-c
• j-a
— t Characteristics (Single pulse)
j-c
• j-a (ºC/W)
j-a
j-c
Absolute Maximum Ratings
Electrical Characteristics
Symbol Ratings Unit
(Ta=25ºC)
(Ta=25ºC)
VDSS 60 Symbol Test Conditions Ratings Unit
V(BR)DSS ID=100µA, VGS=0V 60
min typ max
IGSS µA
µA
VGS=+20V
VGS=–10V
+10
–5
IDSS
S
V
VDS=60V, VGS=0V 100
VTH VDS=10V, ID=250µA 2.51.0
Re(yfs) VDS=10V, ID=25A 20
RDS (ON) mΩ
V
ns
ns
ns
ns
V
VGS=10V, ID=25A
Coss
Ciss VDS=10V
f=1.0MHz
VGS=0V
Crss
td (on) ID=25A
VDD=12V
RL=0.48Ω
VGS=10V
tr
td (off)
tf
VSD ISD=50A, VGS=0V
11 14
pF
pF
pF
2500
900
150
50
400
400
300
1.0 1.5
VGSS V
V
+20, –10
±60
±180
IDA
ID(pulse) A
60(Tc=25ºC)
PD
Tch
W
150
Tstg ºC
ºC
–40 to +150
MOS FET FKV660S
116
External Dimensions TO220S
a
b
10.2±0.3
1.27±0.2
2.54±0.5
2.54±0.5
1.2±0.2
1.6
10.0
8.6±0.3 (1.4)
–0.5
+0.3
3.0
0.86 –0.1
+0.2
4.44±0.2
1.3±0.2
0.4±0.1
(1.5 )
0.1–0.1
+0.2
a) Part No.
b) Lot No.
(Unit : mm)
PW 100µs, duty 1%
–0.5
+0.3
0468 1210
20
0
VDS (V)
ID (A)
■ ID
— VDS Characteristics
■ RDS (ON) — ID Characteristics
■ IDR
— VSD
Characteristics
■ ID
— VGS Characteristics ■ VDS
— VGS Characteristics ■ Re (y fs) — ID Characteristics
120
140
160
180
80
60
40
100
2
100 200
ID (A)
RDS (ON) (Ω)
IDR (A)
101
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD (V)
0
20
40
60
80
100
120
140
160
180
0.20
■ Safe Operating Area (single pulse)
ID (A)
110100
VDS (V)
0.1
1
10
100
500
0.1
■ RDS (ON) — TC Characteristics ■ Capacitance
— VDS Characteristics
050100 150
0.010
0.005
0
Tc (ºC)
RDS (ON) (Ω)
0.030
0.015
0.025
0.020
0.010
0.005
0
0.030
0.015
0.025
0.020
–50–60
023 654
0.001
VGS (V)
ID (A)
1
10
1000
100
0.01
0.1
101015 20
0.2
0
VGS (V)
VDS (V)
0.6
0.8
1.0
1.2
1.4
0.4
5110200100
1
ID (A)
Re (yfs) (S)
100
1000
10
10V
6V
VGS = 3.5V
4V
4.5V
(Ta
= 25ºC) (Ta
= 25ºC)
(Ta
= 25ºC)
(VDS
= 10V)
Ta = 150°C
100°C
50°C
25°C
0°C
–55°C
(ID
= 25A)
ID = 60A
25A
10A
(VDS
= 10V)
–55°C
25°C
150°C
(Ta
= 25ºC)
I
D
(pulse) max
PT=
1ms
P
T=10ms
R
DS (ON)
LIMITED
20 30 40 50
VDS (V)
Capacitance (pF)
10000
1000
100
100
(Ta
= 25ºC)
Ciss
Coss
Crss
VGS = 0 V
f = 1MHz
VGS = 10V
VGS = 4 V
VGS = 10V
VGS = 4 V
VGS
= 0 V
Ta
= 25ºC
Absolute Maximum Ratings
Electrical Characteristics
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VDSS 52±5 Symbol Test Conditions Ratings Unit
V(BR) DSS ID
=
1mA, VGS
=
0V 47 52 57
min typ max
IGSS µA
µA
VGS
= ±
20V ±1.0
IDSS
S
V
VDS
=
40V, VGS
=
0V 100
VTH VDS
=
10V, ID
=
250µA 2.51.81.0
Re (
yfs
)VDS
=
10V, ID
=
1.0A 1.0
RDS (ON) Ω
Ω
V
µs
µs
µs
µs
V
VGS
=
10V, ID
=
1.0A
VGS
=
4V, ID
=
1.0A
Coss
Ciss VDS
=
10V
f
=
1.0MHz
VGS
=
0V
Crss
td (on) ID
=
1A
VDD 12V
RL
=
12Ω
VGS
=
5V
RG1
=
50Ω, RG2
=
10kΩ
tr
td (off)
tf
VSD ISD
=
1A, VGS
=
0V
0.2 0.25
0.25 0.3
pF
pF
pF
200
120
20
2.0
7.4
3.3
4.2
1.0 1.5
VGSS V
V
±20
±3
±6
IDA
ID (pulse)
*
1A
3 (Tc=25ºC, 4 circuits operate)
PT
EAS
*
2
Tch
W
150
40
Tstg ºC
ºC
mJ
–55 to +150
*
1 PW 100µs, duty 1%
*
2 VDD
=
12V, L
=
10mH, unclamped, RG
=
10Ω
2
1
15 16
4
3
13 14
6
5
11 12
8
7
910
Surface-mount MOS FET Array SDK06
117
Equivalent Circuit Diagram
a) Part No.
b) Lot No.
(Unit: mm)
a
b
20.0max
2.54±0.25
0.89±0.15
8.0±0.5
6.3±0.2
0 to 0.15
3.0±0.2
0.25
9.8±0.3
1.0±0.3
19.56±0.2
6.8max
0.75
0.3
16
Pin 1 8
9
4.0max
3.6±0.2
1.4±0.2
External Dimensions SMD-16A
+0.15
–0.05
+0.15
–0.05
024 101268 14
■ ID
— VDS Characteristics
0
5
4
ID (A)
VDS (V)
3
2
1
6
0.01
1
0.1
20
10
01234 56
■ ID
— VGS Characteristics
ID (A)
VGS (V)
0123 645
■ RDS (ON)
— ID Characteristics
0
0.2
RDS (ON) (Ω)
ID (A)
0.8
0.6
0.4
–50 0 50 100 150
■ RDS (ON) — TC Characteristics
0
0.1
0.3
0.2
0.4
RDS (ON) (Ω)
Tc (ºC)
0.5
0.5 1 5 10 50
■ Safe Operating Area (single pulse)
0.5
0.1
1
5
ID (A)
VDS (V)
10 (Tc
= 25ºC)
0.05 0.1 0.5 1 6
■ Re (yfs) — ID Characteristics
0.2
0.5
1
5
10
Re (yfs) (S)
ID (A)
VGS
= 3V
VGS
= 4V
VGS
= 5V
VGS
= 10V
VGS
= 4V
typ.
ID
= 1A
VGS
= 10V
typ.
VDS
= 10V
VDS
= 10V
VGS
= 4V
0 0.40.2 0.6 0.8 1.41.21.0
■ IDR
— VSD Characteristics
0
8
6
4
2
IDR (A)
VSD (V)
10
Ta
= –55ºC
25ºC
75ºC
150ºC
10ms
1ms
100µs
I
D
(pulse) max
R
DS
(on)
LIMITED
Ta
= –55ºC
25ºC
150ºC
Ta
= 150ºC
75ºC
25ºC
–55ºC
25ºC
Ta
= 150ºC
75ºC
–55ºC
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VDSS 50 Symbol Test Conditions Ratings Unit
V(BR) DSS ID
=
100µA, VGS
=
0V 50
min typ max
IGSS nA
µA
VGS
= ±
20V ±100
IDSS
S
V
VDS
=
50V, VGS
=
0V 100
VTH VDS
=
10V, ID
=
1mA 2.3
13.0
1.8
9.0
1.3
Re (yfs) VDS
=
10V, ID
=
4.0A 5.0
RDS (ON) Ω
Ω
V
ns
ns
ns
ns
V
VGS
=
10V, ID
=
4.0A
VGS
=
4V, ID
=
4.0A
Coss
Ciss VDS
=
10V
f
=
1.0MHz
VGS
=
0V
Crss
td (on) ID
=
4A
VDD 12V
RL
=
3Ω
VGS
=
5V
RG
=
50Ω
tr
td (off)
tf
VSD ISD
=
6A, VGS
=
0V
0.07 0.08
0.09 0.1
pF
pF
pF
700
300
90
50
80
60
40
1.0 1.5
VGSS V
V
±20
±4.5
±9
IDA
ID (pulse)
*
1A
4 (Tc=25ºC, 4 circuits operate)
PT
EAS
*
2
Tch
W
150
80
Tstg ºC
ºC
mJ
–55 to +150
*
1 PW 100µs, duty 1%
*
2 VDD
=
12V, L
=
10mH, unclamped, RG
=
50Ω
Absolute Maximum Ratings
Electrical Characteristics
Surface-mount MOS FET Array SDK08
118
Equivalent Circuit Diagram
a) Part No.
b) Lot No.
(Unit: mm)
a
b
20.0max
2.54±0.25
0.89±0.15
8.0±0.5
6.3±0.2
0 to 0.15
3.0±0.2
0.25
9.8±0.3
1.0±0.3
19.56±0.2
6.8max
0.75
0.3
16
Pin 1 8
9
4.0max
3.6±0.2
1.4±0.2
External Dimensions SMD-16A
+0.15
–0.05
+0.15
–0.05
td (on)
015912
2
0
VDS (V)
ID (A)
■ ID
— VDS Characteristics
(typ.)
■ RDS (ON) — ID Characteristics
■ Capacitance
— VDS Characteristics ■ ISD
— VSD Characteristics
(typ.)
■ ID
— VGS Characteristics ■ VDS
— VGS Characteristics
(typ.)
■ Re (y fs) — ID Characteristics
8
10
12
18
16
14
4
6
63
024 8 12106024812106
0.10
0.05
0
ID (A)
RDS (ON) (Ω)
ISD (A)
0.15
0.20
0.10
0.05
0
0.15
0.20
0.10
0.05
0
0.15
0.20
10 100
VDS (V)
Capacitance (pF)
5000
100
10
1000
5
10.1 0.6 0.9 1.51.2
VSD (V)
0
1
2
3
4
5
8
7
6
0.30
■ PT
— Ta Characteristics
PT (W)
50 100 150
Ta (ºC)
0
1
2
3
4
0
■ S/W TimeW — ID Characteristics
0.1 0.5 1 105
10
5
ID (A)
500
100
03254
0.001
VGS (V)
ID (A)
0.1
1
20
10
0.01
1046108
0.2
0
VGS (V)
VDS (V)
0.6
0.8
1.4
1.0
1.2
0.4
2 0.05 10.1 10
0.1
ID (A)
Re (yfs) (S)
10
100
1
VGS = 3 V
VGS = 4 V
VGS = 10V
(ID
= 4A)(VDS
= 10V)
(VGS
= 10V)
(Ta
= 25ºC)
(Ta
= 25ºC)
Ta = 150°C
75°C
25°C
0°C
–55°C
S/W Time (ns)
(VDS
= 10V)
Ta = 1 5 0 °C
25°C
–55°C
Ciss
Coss
Crss
VGS =
0V
f =
1MHz
Ta = 150°C
75°C
25°C
0°C
–55°C
Ta =
150°C
75°C
25°C
0°C
–55°C
4 circuits operate
3 circuits operate
2 circuits operate
1 circuits operate
■ RDS (ON) — TC Characteristics
(typ.)
050100 150
Tc (ºC)
RDS (ON) (Ω)
–50–60
(ID
= 4A)
Ta =
150°C
75°C
25°C
0°C
–55°C
■ RDS (ON) — ID Characteristics
ID (A)
RDS (ON) (Ω)
(VGS
= 4V)
Ta =
150°C
75°C
25°C
0°C
–55°C
VGS =
4V
VGS =
10V
tr
tf
td (off)
(Ta
= 25ºC)
VDD = 12V constant
RGS =
50Ω
VGS =
5V
1
15 16
2
3
13 14
4
5
11 12
6
7
910
8
(single pulse)
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VDSS 120 Symbol Test Conditions Ratings Unit
V(BR) DSS ID=100µA, VGS=0V 120
min typ max
IGSS µA
µA
VGS=±20V ±5
IDSS
S
V
VDS=120V, VGS=0V 100
VTH VDS=10V, ID=250µA 2.01.0
Re
(yfs)
VDS=10V, ID=4A 5.0
RDS (ON) Ω
V
ns
ns
ns
ns
V
VGS=10V, ID=4A
VGS=4V, ID=4A
Coss
Ciss VDS=10V
f=1.0MHz
VGS=0V
Crss
td (on) ID=4A
VDD=12V
RL=3Ω
VGS=5V
RG=50Ω
tr
td (off)
tf
VSD ISD=6A, VGS=0V
0.15 0.2
0.2 0.25
pF
pF
pF
400
130
30
100
300
250
200
1.0 1.5
VGSS V
V
±20
±6
±10
IDA
ID (pulse)
*
1A
3 (Tc=25ºC, 4 circuits operate)
PT
Tch
W
150
Tstg ºC
ºC
–55 to +150
80
EAS
*
2mJ
Absolute Maximum Ratings
Electrical Characteristics
1
15 16
2
3
13 14
4
5
11 12
6
7
910
8
Surface-mount MOS FET Array SDK09
119
Equivalent Circuit Diagram
a) Part No.
b) Lot No.
(Unit: mm)
a
b
20.0max
2.54±0.25
0.89±0.15
8.0±0.5
6.3±0.2
0 to 0.15
3.0±0.2
0.25
9.8±0.3
1.0±0.3
19.56±0.2
6.8max
0.75
0.3+0.15
–0.05
+0.15
–0.05
16
Pin 1 8
9
4.0max
3.6±0.2
1.4±0.2
External Dimensions SMD-16A
012 534 6
■ ID
— VDS Characteristics
0
12
ID (A)
VDS (V)
8
4
16
0
8
6
4
2
10
0 1.0 2.0 3.0 4.0
■ ID
— VGS Characteristics
ID (A)
VGS (V)
024 8610
■ RDS (ON) — ID Characteristics
0
0.10
0.05
RDS (ON) (Ω)
ID (A)
0.30
0.25
0.20
0.15
–50 0 50 100 150
■ RDS (ON)
— TC Characteristics
0
0.10
0.30
0.20
0.40
RDS (ON) (Ω)
Tc (ºC)
0.45
01020304050
■ Capacitance
— VDS Characteristics
10
50
100
500
Capacitance (pF)
VDS (V)
1000
151050 100 200
■ Safe Operating Area (single pulse)
0.5
0.1
10
1
5
ID (A)
VDS (V)
20 (Ta
= 25ºC)
0.05 0.1 0.5 1 5 10
■ Re (yfs)
— ID Characteristics
0.1
0.5
1
5
10
50
Re (yfs) (S)
ID (A)
VGS=4.5V
VGS=10V
VGS=4V
ID=4A
VGS=10V
VGS=0V
f=1MHz
Coss
Ciss
Crss
VDS=10V
0 0.40.2 0.6 0.8 1.21.0
■ IDR
— VSD Characteristics
0
5
4
3
2
1
IDR (A)
VSD (V)
6
VGS=4V
VGS=10V
Ta=–55ºC
25ºC
75ºC
150ºC
100ms
10ms
1ms
100µs
I
D (
pulse) max
I
D (DC)
max
R
DS (on)
LIMITED
Ta=–55ºC
25ºC
75ºC
150ºC
Ta=150ºC
75ºC
25ºC
–55ºC
VGS=0V
*
1 PW 100µs, duty 1%
*
2 VDD
=
12V, L
=
10mH, unclamped, RG
=
50Ω
0123456
■ ID
— VDS Characteristics
0
4
8
ID (A)
VDS (V)
6
2
10
01234
■ ID
— VGS Characteristics
0
4
6
10
ID (A)
VGS (V)
8
2
12
0.1 1 10 20
■ RDS (ON) — ID Characteristics
0
0.05
RDS (on) (Ω)
ID (A)
0.1
–50 0 50 100 150
■ RDS (ON)
— TC Characteristics
0.02
0.06
0.10
RDS (ON) (Ω)
Tc (ºC)
0.12
151050
■ Capacitance
— VDS Characteristics
50
500
100
1000
Capacitance (pF)
VDS (V)
2000
0.5 1 5 10 10050
■ Safe Operating Area (single pulse)
0.5
10
1
5
ID (A)
VDS (V)
50 (Ta
= 25ºC)
0.4 1 5 10 20
■ Re (yfs)
— ID Characteristics
2
5
10
Re (yfs) (S)
ID (A)
30
4V
5V
10V
VGS
= 3V
VGS
= 4V VDS
= 10V
VGS
= 10V
VGS
= 0V
f
= 1MHz
Coss
Ciss
Crss
VDS
= 10V
0 0.4 0.8 1.2
■ IDR
— VSD Characteristics
0.1
5
10
IDR (A)
VSD (V)
1
0.5
20
VGS
= 0V
VGS
= 4V
VGS
= 10V
Ta
= 150ºC
75ºC
25ºC
–55ºC
100ms
10ms
1ms
0.5ms
I
D
(pulse) max
ID (DC) max
R
DS
(on) LIMITED
Assumed V
GS
= 4V line
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VDSS 60 Symbol Test Conditions Ratings Unit
V(BR) DSS ID
=
100µA, VGS
=
0V 60
min typ max
IGSS µA
µA
VGS
= ±
20V ±100
IDSS
S
V
VDS
=
60V, VGS
=
0V 100
VTH VDS
=
10V, ID
=
1mA 2.01.5
12.0
1.0
Re
(yfs)
VDS
=
10V, ID
=
8A 6.0
RDS (ON) Ω
V
ns
ns
ns
ns
V
VGS
=
4V, ID
=
8A
Coss
Ciss VDS
=
10V
f
=
1.0MHz
VGS
=
0V
Crss
td (on) ID
=
8A
VDD 30V
RL
=
3.75Ω
VGS
=
5V
RG
=
50Ω
tr
td (off)
tf
VSD ISD
=
10A, VGS
=
0V
0.07 0.08
pF
pF
pF
1100
500
170
50
250
250
180
1.0 1.5
VGSS
j-c
VISO
V
V
±20
±12
±48
IDA
ID (pulse)
*
1A
5 (Ta=25ºC, 4 circuits operate)
60 (Tc=25ºC,4 circuits operate)
PT
EAS
*
2
Tch
W
W
Vrms
150
250
2.08
(Fin to lead terminal) AC1000
Tstg ºC
ºC
ºC/W
mJ
–55 to +150
*
1 PW 250µs, duty 1%
*
2 VDD
=
30V, L
=
10mH, unclamped, RG
=
50Ω
Absolute Maximum Ratings
Electrical Characteristics
1
3
2
4
6
5
8
7
9
11
10
12
MOS FET Array SLA5027
120
12 3
11• P2.54
±
0.7
=
27.94
±
1.0
31.5 max
0.85
1.2±0.15
31.0±0.2
24.4±0.2
16.4±0.2
3.2±0.15
0.55 2.2±0.7
1.7±0.1
4.8±0.2
1.45±0.15
Pin 1 12
456789101112
8.5max
9.5 min (10.4)
9.9±0.2
13.0±0.2
16.0±0.2
2.7
a) Part No.
b) Lot No.
(Unit: mm)
External Dimensions SLA 12pin (LF800)
Equivalent Circuit Diagram
a
b
+0.2
–0.1
+0.2
–0.1
Ellipse 3.2±0.15 • 3.8
Lead plate thickness
resins
0.8max
MOS FET Array SLA5098 (under development)
121
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VDSS 40 Symbol Test Conditions Ratings Unit
V(BR) DSS ID
=
100µA, VGS
=
0V 40
min typ max
IGSS µA
µA
VGS
=
±15V ±10
IDSS
S
V
VDS
=
40V, VGS
=
0V 100
VTH VDS
=
10V, ID
=
250µA2.51.5
Re (yfs) VDS
=
10V, ID
=
10A
VGS
=
10V, ID
=
10A
10
RDS (ON) mΩ
V
ns
ns
ns
ns
V
ns
Coss
Ciss VDS
=
10V
f
=
1.0MHz
VGS
=
0V
Crss
td (on) ID
=
10A
VDD
=
14V
RL
=
1.4Ω
VGS
=
10V
RG
=
50Ω
tr
trr
td (off)
tf
VSD ISD
=
10A, VGS
=
0V
ISD
=
10A, VGS
=
0V
di/dt
=
100A/µs
17
pF
pF
pF
1450
420
260
40
40
200
100
0.85
45
1.2
VGSS V
V
±20
20
40
IDA
ID (pulse)
*
A
5
PT
Tch
W
W
150
Tstg ºC
ºC
–55 to +150
IAS To be defined A
EAS To be defined mJ
Electrical Characteristics
Absolute Maximum Ratings
5
2
4
1
3
Equivalent Circuit Diagram
External Dimensions STA4 (LF412)
10
7
9
6
8
15
12
14
11
13
123
14• P2.03
±
0.4 = 28.42
±
0.8
31.5 max
0.65
1.2±0.15
31.0±0.2
24.4±0.2
16.4±0.2
3.2±0.1
0.55 2.2±0.7
1.7±0.1
4.8±0.2
1.15
Pin 1 15
456789101112131415
8.5max
9.5 min (10.4)
9.9±0.2
13.0±0.2
16.0±0.2
2.7
+0.2
–0.1
+0.2
–0.1
+0.2
–0.1
*
PW 100µs, duty 1%
a) Part No.
b) Lot No.
(Unit: mm)
a
b
Without heatsink, Ta=25°C,
(
All circuits operate
)
Tc=25°C,
(
All circuits operate
)
90
Ellipse 3.2±0.1 • 3.8
Lead plate thickness
resins
0.8max
Absolute Maximum Ratings
Electrical Characteristics
051015 20
■ ID
— VDS Characteristics
0
5
6
ID (A)
VDS (V)
4
3
2
1
7
0
5
6
4
3
2
1
7
0246810
■ ID
— VGS Characteristics
ID (A)
VGS (V)
01234567
■ RDS (ON) — ID Characteristics
0
1.0
0.5
RDS (ON) (Ω)
ID (A)
1.5
–50 0 50 100 150
■ RDS (ON) — TC Characteristics
0
1.0
0.5
2.0
1.5
RDS (ON) (Ω)
Tc (ºC)
2.5
01020304050
■ Capacitance
— VDS Characteristics
20
50
100
500
Capacitance (pF)
VDS (V)
1000
35 10 50 100 500
■ Safe Operating Area (single pulse)
0.5
0.1
0.05
10
1
5
ID (A)
VDS (V)
50 (Ta
= 25ºC)
0.05 0.1 0.5 1 7
■ Re (y fs) — ID Characteristics
2
5
10
50
Re (yfs) (S)
ID (A)
100
5.5V
5V
VGS
= 4.5V
ID
= 3.5A
VDS
= 20V
VGS
= 10V
VGS
= 0V
f
= 1MHz
Coss
Ciss
Crss
VDS
= 20V
0 0.40.2 0.6 0.8 1.0
■ IDR
— VSD Characteristics
0
5
4
3
2
1
6
IDR (A)
VSD (V)
7
VGS
= 0V
VGS
= 10V
Ta
= –55ºC
25ºC
150ºC
100ms
10ms
1ms
100µs
I
D
(pulse) max
I
D (DC)
max
R
DS
(on) LIMITED
10V
Ta
= –55ºC
25ºC
150ºC
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VDSS 450 Symbol Test Conditions Ratings Unit
V(BR) DSS ID
=
100µA, VGS
=
0V 450
min typ max
IGSS nA
µA
VGS
= ±
30V ±100
IDSS
S
V
VDS
=
450V, VGS
=
0V 100
VTH VDS
=
10V, ID
=
1mA 4.0
5.0
2.0
Re (
yfs)
VDS
=
20V, ID
=
3.5A 3.5
RDS (ON
)
Ω
V
ns
ns
ns
ns
V
VGS
=
10V, ID
=
3.5A
Coss
Ciss VDS
=
10V
f
=
1.0MHz
VGS
=
0V
Crss
td (on
)
ID
=
3.5A
VDD 200V
RL
=
57Ω
VGS
=
10V
RG
=
50Ω
tr
td (off
)
tf
VSD ISD
=
7A, VGS
=
0V
0.84 1.1
pF
pF
pF
720
150
65
25
40
70
50
1.0 1.5
VGSS
j-a
j-c
IAS
V
V
±30
±7
±28
IDA
ID (pulse)
*
1A
A
4 (Ta=25ºC, All circuits operate, No Fin)
35 (Tc=25ºC, All circuits operate,
∞
Fin)
PT
EAS
*
2
Tch
W
W
150
130
7
31.2
3.57
Tstg ºC
ºC
ºC/W
ºC/W
mJ
–55 to +150
*
1 PW 100µs, duty 1%
*
2 VDD
=
30V, L
=
5mH, IL
=
7A, unclamped,
RG
=
50Ω
MOS FET Array SMA5113
122
Equivalent Circuit Diagram
Junction - Ambientare,
Ta=25º
C
, All circuits operate
Junction - Case,
Ta=25º
C
, All circuits operate
0.85
31.5 max
a
b
31.0±0.2
4.0±0.2
2.5±0.2
1.46±0.15
1.21±0.15
11• P2.54±0.1= 27.94
10.2±0.2
2.4
(10.4)
0.55 1.2±0.1
30º
123456789101112 a) Part No.
b) Lot No.
(Unit: mm)
External Dimensions SMA (LF1000)
+0.2
–0.1 +0.2
–0.1
1
3
2
4
6
5
8
7
9
11
10
12
(Including both-side resin burr)
012 534 6
■ ID
— VDS Characteristics
0
12
ID (A)
VDS (V)
8
4
16
0
8
6
4
2
10
0 1.0 2.0 3.0 4.0
■ ID
— VGS Characteristics
ID (A)
VGS (V)
024 8610
■ RDS (ON) — ID Characteristics
0
0.10
0.05
RDS (ON) (Ω)
ID (A)
0.30
0.25
0.20
0.15
–50 0 50 100 150
■ RDS (ON) — TC Characteristics
0
0.10
0.30
0.20
0.40
RDS (ON) (Ω)
Tc (ºC)
0.45
01020304050
■ Capacitance
— VDS Characteristics
10
50
100
500
Capacitance (pF)
VDS (V)
1000
151050 100 200
■ Safe Operating Area (single pulse)
0.5
0.1
10
1
5
ID (A)
VDS (V)
20 (Ta
= 25ºC)
0.05 0.1 0.5 1 5 10
■ Re (yfs)
— ID Characteristics
0.1
0.5
1
5
10
50
Re (yfs) (S)
ID (A)
VGS
= 4.5V
VGS
= 10V
VGS
= 4V
ID
= 4A
VGS
= 10V
VGS
= 0V
f
= 1MHz
Coss
Ciss
Crss
VDS
= 10V
0 0.40.2 0.6 0.8 1.21.0
■ IDR
— VSD Characteristics
0
5
4
3
2
1
IDR (A)
VSD (V)
6
VGS
= 4V
VGS
= 10V
Ta
= –55ºC
25ºC
75ºC
150ºC
100ms
10ms
1ms
100µs
I
D
(
pulse
)
max
I
D
(
DC
)
max
R
DS (on)
LIMITED
Ta
= –55ºC
25ºC
75ºC
150ºC
Ta
= 150ºC
75ºC
25ºC
–55ºC
VGS
= 0V
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VDSS 120 Symbol Test Conditions Ratings Unit
V(BR) DSS ID
=
100µA, VGS
=
0V 120
min typ max
IGSS µA
µA
VGS
= ±
20V ±5
IDSS
S
V
VDS
=
120V, VGS
=
0V 100
VTH VDS
=
10V, ID
=
250µA 2.01.0
Re (
yfs
)VDS
=
10V, ID
=
4.0A
VGS
=
10V, ID
=
4.0A
5.0
RDS (ON)Ω
Ω
V
ns
ns
ns
ns
V
VGS
=
4V, ID
=
4.0A
Coss
Ciss VDS
=
10V
f
=
1.0MHz
VGS
=
0V
Crss
td (on) ID
=
4A
VDD 12V
RL
=
3Ω
VGS
=
5V
RG
=
50Ω
tr
td (off)
tf
VSD ISD
=
6A, VGS
=
0V
0.15
0.2
0.2
0.25
pF
pF
pF
400
130
30
100
300
250
200
1.0 1.5
VGSS V
V
±20
±6
±10
IDA
ID (pulse)
*
1A
4 (Ta
=
25ºC)
20 (Tc
=
25ºC)
PT
EAS
*
2
Tch
W
W
150
80
Tstg ºC
ºC
mJ
–55 to +150
*
1 PW 100µs, duty 1%
*
2 VDD
=
12V, L
=
10mH, unclamped, RG
=
50Ω
Electrical Characteristics
Absolute Maximum Ratings
2
1
3
4
5
6
7
8
9
10
MOS FET Array STA508A
123
Equivalent Circuit Diagram
a) Part No.
b) Lot No.
(Unit: mm)
9•2.54=22.86±0.05
a
b
(2.54)
25.25±0.2
9.0±0.2
2.3±0.2
11.3±0.2
3.5 ±0.5
0.5±0.15
0±0.3
1.0±0.25
C1.5±0.5
4.0±0.2
0.5±0.15
1.2±0.2
1324
SGDG
567 10
DGD S
89
GD
0±0.3
External Dimensions STA4 (LF412)
024 101268 14
■ ID
— VDS Characteristics
0
5
4
ID (A)
VDS (V)
3
2
1
6
0.01
1
0.1
20
10
01234 56
■ ID
— VGS Characteristics
ID (A)
VGS (V)
0123 645
■ RDS (ON)
— ID Characteristics
0
0.2
RDS (ON) (Ω)
ID (A)
0.8
0.6
0.4
–50 0 50 100 150
■ RDS (ON) — TC Characteristics
0
0.1
0.3
0.2
0.4
RDS (ON) (Ω)
Tc (ºC)
0.5
0.5 1 5 10 50
■ Safe Operating Area (single pulse)
0.5
0.1
1
5
ID (A)
VDS (V)
10 (Tc
= 25ºC)
0.05 0.1 0.5 1 6
■ Re (yfs) — ID Characteristics
0.2
0.5
1
5
10
Re (yfs) (S)
ID (A)
VGS
= 3V
VGS
= 4V
VGS
= 5V
VGS
= 10V
VGS
= 4V
typ.
ID
= 1A
VGS
= 10V
typ.
VDS
= 10V
VDS
= 10V
VGS
= 4V
0 0.40.2 0.6 0.8 1.41.21.0
■ IDR
— VSD Characteristics
0
8
6
4
2
IDR (A)
VSD (V)
10
Ta
= –55ºC
25ºC
75ºC
150ºC
10ms
1ms
100µs
I
D
(pulse) max
R
DS
(on)
LIMITED
Ta
= –55ºC
25ºC
150ºC
Ta
= 150ºC
75ºC
25ºC
–55ºC
25ºC
Ta
= 150ºC
75ºC
–55ºC
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VDSS 52±5Symbol Test Conditions Ratings Unit
V(BR) DSS ID
=
1mA, VGS
=
0V 47 52 57
min typ max
IGSS µA
µA
VGS
= ±
20V ±1.0
IDSS
S
V
VDS
=
40V, VGS
=
0V 100
VTH VDS
=
10V, ID
=
250µA 2.51.0
Re (yfs) VDS
=
10V, ID
=
1.0A
VGS
=
10V, ID
=
1.0A
1.0
RDS (ON) Ω
Ω
V
µs
µs
µs
µs
V
VGS
=
4V, ID
=
1.0A
Coss
Ciss VDS
=
10V
f
=
1.0MHz
VGS
=
0V
Crss
td (on)ID
=
1A
VDD 12V
RL
=
12Ω
VGS
=
5V
RG1
=
50Ω, RG2
=
10Ω
tr
td (off)
tf
VSD ISD
=
6A, VGS
=
0V
0.2
0.25
0.25
0.3
pF
pF
pF
200
120
20
2.0
7.4
3.3
4.2
1.0 1.5
VGSS V
V
±20
±3
±6
IDA
ID (pulse)
*
1A
4 (Ta
=
25ºC)
20 (Tc
=
25ºC)
PT
EAS
*
2
Tch
W
W
150
40
Tstg ºC
ºC
mJ
–55 to +150
*
1 PW 100µs, duty 1%
*
2 VDD
=
12V, L
=
10mH, unclamped, RG
=
10Ω
Electrical Characteristics
Absolute Maximum Ratings
2
1
3
4
5
6
7
8
9
10
MOS FET Array STA509A
124
Equivalent Circuit Diagram
External Dimensions STA
a) Part No.
b) Lot No.
(Unit: mm)
9•2.54= 22.86±0.05
a
b
(2.54)
25.25±0.2
9.0±0.2
2.3±0.2
11.3±0.2
3.5 ±0.5
0.5±0.15
0±0.3
1.0±0.25
C1.5±0.5
4.0±0.2
0.5±0.15
1.2±0.2
1324
SGDG
567 10
DGD S
89
GD
0±0.3
Measurement circuit
Current waveform (1cycle)
External Dimensions (unit: mm)
Thyristor with built-in reverse diode for HID lamp ignition
TFC561D
Features
● Repetitive peak off-state voltage: VDRM=600V
● Repetitive peak surge on-state current: ITRM=430A
● Critical rate-of-rise of on-state current: di/dt=1200A/µs
● Gate trigger current: IGT=20mA max
● With built-in reverse diode
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Repetitive peak off-state voltage
Repetitive surge peak
on-state current
Critical rate-of-rise of on-state current
Average gate power loss
Peak reverse gate voltage
Diode repetitive peak surge
forward current
Junction temperature
V
DRM
I
TRM
di/dt
I
FGM
P
GM
P
G (AV)
V
RGM
I
FRM
Tj
Tstg
V
A
Tj=–40 to +125
°C
,
RGK=1kΩ
A/µs
W
W
V
A
ºC
600
430
1200
Peak forward gate current
Peak gate power loss
A2.0
5.0
0.5
5
240
–40 to +125
Storage temperature
VD
430V, 100kcycle,
Wp=1.3µs, Ta=125°C
f 50Hz, duty 10%
f 50Hz, duty 10%
f 50Hz
VD 430V, 100kcycle,
Wp=1.3µs, Ta=125°C
ºC–40 to +125
Electrical Characteristics
Parameter Symbol
min typ max
Unit Conditions
Ratings
(Tj=25ºC)
VTM
VD=6V, RL=10Ω
VD=6V, RL=10Ω
IT=10A
10.0
1.4 V
20
1.5
mA
VVGT
IGT
VD=480V, Tj=125
ºC
RG–K=1kΩ, Tj=25
ºC
VVGD
mAIH
V
D
=
V
DRM
, R
G–K
=
1k
Ω
, Tj
=
25ºC
V
D
=
V
DRM
, R
G–K
=
1k
Ω
, Tj
=
125ºC
Junction to case
IF=10A
100
1
1.4
4.0
µAIDRM (1)
Off-state current (2)
Off-state current (1)
Holding current
Gate non-trigger voltage
Gate trigger current
Gate trigger voltage
On-state voltage
mAIDRM (2)
0.1
Thermal resistance ºC/WRth
2
Diode forward voltage VVF
(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)
10.2±0.3
1.2±0.2
1.27±0.2
2.59±0.2
1.3±0.2
4.44±0.2
0.86
0.76±0.1
0.4±0.1
2.54±0.5
11.0±0.5
2.54±0.5
8.6±0.3
11.3±0.5
(1.4)
+0.2
–0.1
10.0+0.3
–0.5
(1) (2) (3)
VDG1
G2
C
L
Sample
(Ta=25ºC)
100A/div
2µs/div
*
*
*
Weight: Approx. 1.5g
* The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to
cool down the junction temperature of the device to 125°C. This process shall be repeated up to 100K cycles.
125
126
Current waveform (1cycle)
External Dimensions (unit: mm)
Thyristor with built-in reverse diode for HID lamp ignition
TFC562D
Features
● Repetitive peak off-state voltage: VDRM=600V
● Repetitive peak surge on-state current: ITRM=600A
● Critical rate-of-rise of on-state current: di/dt=1600A/µs
● Gate trigger current: IGT=20mA max
● With built-in reverse diode
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Repetitive peak off-state voltage
Repetitive surge peak
on-state current
Critical rate-of-rise of on-state current
Average gate power loss
Peak reverse gate voltage
Diode repetitive peak surge
forward current
Junction temperature
V
A
Tj = –40 to +125°C,
RGK = 1 k Ω
A/µs
W
W
V
A
ºC
600
600
1600
Peak forward gate current
Peak gate power loss
A2
5
0.5
5
460
–40 to +125
Storage temperature
Ta
=
100°C, V
D
430V,
W
P =
1.05µs, I
G =
70mA,
dig/dt
=
0.5A/µs,
100kcycle
*
,
See the examples of current waveforms
f 50Hz, duty 10%
f 50Hz, duty 10%
f 50Hz
Ta
=
100°C, V
D
430V,
W
P =
1.05µs,
100kcycle
*
,
See the examples of current waveforms
ºC
–40 to +125
Electrical Characteristics
Parameter Symbol min typ max Unit Conditions
Ratings
(Tj=25ºC)
VTM
VD = 6V, RL = 1 0 Ω
VD = 6V, RL = 1 0 Ω
IT = 10A
5
1.4 V
20
1.5
mA
V
VGT
IGT (1)
VD = 480V, Tj = 125°C
RG–K = 1 k Ω, Tj = 25°C
V
VGD
mA
IH
VD = V DRM, RG–K = 1 k Ω, Tj = 25°C
VD = V DRM, RG–K = 1 k Ω, Tj = 125°C
Junction to case
,
With infinite heatsink
IF = 10A
10
1
1.4
4.0
µA
IDRM (1)
Off-state current (2)
Off-state current (1)
Holding current
Gate non-trigger voltage
Gate trigger current
Gate trigger voltage
On-state voltage
mA
IDRM (2)
0.1
Thermal resistance °C/W
Rth
2
Diode forward voltage V
VF
1.34+0.2
–0.1
10.5+0.3
–0.5
+0.2
–0.1
0.86
0.76±0.1
4.44±0.2
1.3±0.2
2.6±0.2
11.0±0.5
9.1±0.3
(2.69)
(0.45)
(1.4)
(
1.8
)
2.54±0.1
10.2±0.3
2.54±0.1 0.4±0.1
(Root dimension)
(Root dimension)
(Root dimension)
231
(5)
a
b
* A single cycle operation consists of a continuous impression of 50
rounds with period T = 10ms followed by a rest time for the junction
temperature of the element to cool down to 100°C (= Ta). Repeat
this cycle operation.
(Ta=100ºC)
H: 2µs/div
V: 200A/div
V
DRM
I
TRM
di/dt
I
FGM
P
GM
P
G (AV)
V
RGM
I
FRM
Tj
Tstg
* The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to
cool down the junction temperature of the device to 125°C. This process shall be repeated up to 100K cycles.
Absolute maximum ratings Electrical Characteristics
Part No.
200 20 –40 to +150200 1.10 20 0.25 1
200 35 –40 to +150350 1.10 35 0.25
—
—
—
—
SG-9CNS
SG-9CNR
200 30 –40 to +150300 1.10 30 0.25
2
——
SG-9LCNS
SG-9LCNR
SG-9LLCNS
SG-9LLCNR
200 30 –40 to +150300 1.2 100 0.25 — —
SG-10LS
SG-10LR
150 35 –40 to +150350 1.05 100 0.25
3
——
SG-10LXS
SG-10LXR
200 40 –40 to +150400 1.05 100 0.25 — —
SG-10LLS
SG-10LLR
150 45 –40 to +150450 1.0 100 0.25 — —
SG-10LLXS
SG-10LLXR
R type S type
Polarity
S type R type
Polarity
Fig. 1 Fig. 2
Rectifier Diodes for Alternators
127
External Dimensions (unit: mm)
Fig. 3 Fig. 4
17 20 –40 to +200200 1.10 20 0.05 123±310
SG-9CZS
SG-9CZR
17 35 –40 to +200350 1.10 35 0.05 223±310
SG-9LLCZS
SG-9LLCZR
17 30 –40 to +150300 1.2 100 0.05
3
23±310
SG-10LZ23S
SG-10LZ23R
17 40 –40 to +150400 1.05 100 0.05 23±310
SG-10LLZ23S
SG-10LLZ23R
16 35 –40 to +200350 1.15 100 0.05 422±3 100
SG-14LXZS
SG-14LXZR
(ºC)
Tstg
Tj
■ Normal Type
■ Zener Type
12.84
1.26
9.0
11.5
S : 20.5
R : 28.5
10max
8max
4.7
4.0
0.3
5.0
10.7
10.0
13.5
24.0
2
(4°)
(1.5)
(2)
(5.8)
(45°)
(30°)
0.4
1.0
1. 4
4.4
0.6
2.0
2.5 R1.2
3.0
4.2
5.0
3.6
VRM
(V)
IF (AV)
(A)
IFSM
(A)
VF
(V)
max
IR
(mA)
max
VZ
(V)
Fig.
No.
IF (A)
IF (A)
Condition Condition
IZ (mA)
Absolute maximum ratings Electrical Characteristics
Part No.
(ºC)
Tstg
Tj
VRM
(V)
IF (AV)
(A)
IFSM
(A)
VF
(V)
max
IR
(mA)
max
VZ
(V)
Fig.
No.
Condition Condition
IZ (mA)
3.1±0.1
S: 19.0±1.0
R: 23.0±1.0
8.4±0.2
7.0±0.2
1.5
5±0.4
11.2
S type R type
Polarity
S type R type
Polarity
3.1±0.1
S: 19.0±1.0
R: 23.0±1.0
8.4±0.2
9.5±0.2
1.5
(R0.5)
5±0.4
1
1.2
Absolute Maximum Ratings
Electrical Characteristics (Ta=25ºC)
VRM
(kV)
IF (AV)
(mA)
50 Hz
half-wave
signal
average
IRSM
(mA)
Peak value of
single shot
triangular wave
with 100µs
half-power
bandwidth
IRSM
(A)
Peak value
of 50 Hz
half-wave
signal
VF
(V)
max
Vz
(kV)
IR=100µA
IR
(µA)
VR=VRM
max
Condition
IF (mA)
Fig.
No.
TjTstg
(ºC)
SHV-05J 2.5 30 30 3 –40 to +150 51010 2.6 to 5.0
SHV-01JN 0.5 30 30 3 1 0.55 to 1.0
1
2
SHV-06JN 3.0 30 10 3 6 3.2 to 6.0 2
27min
5±0.2
0.5
C0.5
C0.5
2.5±0.2
27min 27min 6.5
0.5
2.5±0.2
27min
Part No.
High-voltage Diodes for Igniters
128
External Dimensions (unit: mm)
Fig. 1 (SHV-05J) Fig. 2 (SHV-06JN)
129
Power Zener Diode
–40 to +150
–55 to +150
–55 to +150
–55 to +150
–55 to +150
–55 to +150
–40 to +150
–55 to +175
–55 to +175
–55 to +175
–55 to +175
Absolute Maximum Ratings Electrical Characteristics
PR
(W)
VDC
(V)
IZSM
(A)
Condition
IZ (mA)
IR
VR=VDC
(µA)
max
TstgTj VZ (V)
1mA
instantaneous
current
Part No. Remarks
Surface-mount
type
Axial type
Surface-mount
type
(ºC)
SFPZ-68
SJPZ-K28 *
SJPZ-E18 *
SJPZ-E27 *
SJPZ-E33 *
SJPZ-E36 *
PZ628
SZ-10N27
SZ-10N40 *
SZ-10NN27
SZ-10NN40 *
50
(5ms)
85
(500µs)
1500
(5ms)
—
—
—
—
20
20
13
20
25
27
20
22
22
22
22
2
2
—
—
—
—
65*1
70*1
40*1
90*1
55*1
25.0 to 31.0
25.0 to 31.0
16.8 to 19.1
25.1 to 28.9
31.0 to 35.0
34.0 to 38.0
25.0 to 31.0
24 to 30
36 to 40
24 to 30
36 to 40
1
1
1
1
1
1
10
10
10
10
10
10
10
10
10
10
10
50
10
10
10
10
1
2
2
2
2
2
3
4
4
4
4
P
(W)
1
1
1
1
1
1
5
5
5
6
6
(Ta= 25ºC)
Fig. 1
Fig. 3 Fig. 3
Fig. 2
External Dimensions (unit: mm)
*1: IZSM conditions
IRSM
IRSM
2
0 10ms Time
8.5±0.5
5±0.3
2±0.3
2.7±0.3
3±0.5
7.2±0.5
10±0.3
10±0.3
13.5±0.3
15.5±0.5
(9.75)
2.0±0.5
* under development
+0.4
–0.1
5.0
+0.1
–0.05
0.05
1.3±0.4 1.5±0.2
2.15±0.2 2.6±0.2
4.5±0.2
1.3±0.4
Fig.
No.
56.0
1.3 ±0.05
±0.2
±0.7
±0.02
10.0
C2
10.0
Cathode marking
4.5 ±0.2
±0.2±0.2
±0.2
±0.4±0.4
±0.2
0.05
2.0min
1.35 1.35
5.1+0.4
–0.1
2.6
2.05
1.1
1.5
130
VRM
(V)
IF (AV)
(A)
IFSM
(A)
Peak value
of 50 Hz
half-wave
signal
Peak value
of 50 Hz
half-wave
signal
Peak value
of 50 Hz
half-wave
signal
VF
(V)
max
Tstg
(ºC)
Rth
(j-l)
(°C/W)
Weight
(g)
Tj
(ºC)
IR
(µA)
VR=VRM
max
Part No.
Condition
IF (A)
SFPM-52
SFPM-62
SFPM-54
SFPM-64
200
400
0.9
1.0
0.9
1.0
30
45
30
45
1.0
0.98
1.0
0.98
1.0
1.0
1.0
1.0
Condition
Ta (°C)
100
100
100
100
10
10
10
10
IR (H)
(mA) Package
VR=VRM
max
50
50
50
50
–40 to +150
■ Surface-mount
Rectifier Diodes
General-purpose Diodes
20
20
20
20
1
1
1
1
0.072
0.072
0.072
0.072
VRM
(V)
IF (AV)
(A)
IFSM
(A) VF
(V)
max
Tstg
(ºC)
Rth
(j-l)
(°C/W)
Weight
(g)
Tj
(ºC)
IR
(µA)
VR=VRM
max
Part No.
Condition
IF (A)
SFPJ-53
*
SFPJ-63
SFPJ-73
SFPB-54
SFPB-64
SFPE-64
SFPB-74
SFPB-56
SFPW-56
SFPB-66
SFPB-76
SFPB-59
SFPB-69
1.0
2.0
3.0
1.0
2.0
2.0
3.0
0.7
1.5
2.0
2.0
0.7
1.5
30
30
30
40
40
40
40
60
60
60
60
90
90
30
40
50
30
60
40
60
10
25
25
40
10
40
0.45
0.45
0.45
0.55
0.55
0.6
0.5
0.62
0.7
0.69
0.62
0.81
0.81
1.0
2.0
3.0
1.0
2.0
2.0
2.0
0.7
1.5
2.0
2.0
0.7
1.5
Condition
Ta (°C)
150
150
150
150
150
150
150
150
150
150
150
150
150
1.0
2.0
3.0
1
5
0.2
5
1
1
1
2
1
2
IR (H)
(mA) Package
VR=VRM
max
35
70
100
35
70
70
100
30
70
55
70
30
55
–40 to +150
20
20
20
20
20
20
20
20
20
20
20
20
20
1
1
1
1
1
1
1
1
1
1
1
1
1
0.072
0.072
0.072
0.072
0.072
0.072
0.072
0.072
0.072
0.072
0.072
0.072
0.072
VRM
(V)
IF (AV)
(A)
IFSM
(A) VF
(V)
max
Tstg
(ºC)
trr
(ns)
trr
(ns)
Rth
(j-l)
(°C/W)
Weight
(g)
Tj
(ºC)
IR
(µA)
VR=VRM
max
Part No.
Condition
IF (A)
SFPL-52
SFPL-62
MPL-102S
MP2-202S
SFPL-64
200
400
0.9
1.0
10.0
20.0
1.0
25
25
65
110
25
0.98
0.98
0.98
0.98
1.3
1.0
2.0
5.0
10.0
1.0
Condition
Ta (°C)
150 (Tj)
150 (Tj)
150
150
150
50
50
40
50
50
35
35
30
35
30
100/100
100/100
100/100
100/100
100/100
10
10
100
200
10
IR (H)
(mA) Package
VR=VRM
max
1
1
0.2
0.4
0.05
–40 to +150
■ Surface-mount
Ultra Fast Recovery Rectifier Diodes
Condition
IF/IRP
(mA)
100/200
100/200
100/200
100/200
100/200
20
20
2.5
2.5
20
1
1
2
2
1
0.072
0.072
1.4
1.4
0.072
Condition
IF/IRP
(mA)
■ Surface-mount
Schottky Barrier Diodes
External Dimensions (unit: mm)
4.5 ±0.2
0.05
2.0min
1.35±0.4 1.35±0.4
5.1+0.4
–0.1
2.6±0.2
2.05±0.2
1.1 ±0.2
1.5 ±0.2
1: (Surface-mount SFP) 2: (TO-220S)
6.5±0.4 2.3±0.4 5.4
4.9
4.1
5.4
a
b
c
±0.4
1.7±0.5
5.5 ±0.4
2.5 ±0.4
0.8±0.1 0.8
1.5 max
±0.1
0.55±0.1
0.55±0.1
1.15±0.1
1.2max
2.29±0.5 2.29±0.5
0 to 0.25
0.5±0.2
2.9
0.16
1.37
5.0
0.7
N.C AnodeCathode
* under development
(Common with heatsink)
a) Part No.
b) Polarity
c) Lot No.
Taping
Name Taping Dimensions (mm)
Packaging Dimensions (mm) and Markings
Packaging
Quantity
A suffix "V" is
added to Part
No. for tape
packaging.
V
Emboss taping Reel
(1) The right side of the tape is the cathode viewing in the unfold direction.
(2) The product is inserted into the case with the installed electrode on the lower side.
(3) A leader tape 150 to 200mm long is provided on the unfolding edge.
(4) A space of at least 10 pitches equivalent is provided on either end of the tape.
(5) Taping with reversed diode polarity is available on request (taping name VL).
1,800 pcs.
per reel
4.5±0.2
0.05
2.0min
1.35 ±0.4 1.35±0.4
5.1+0.4
–0.1
2.6±0.2
2.05±0.2
1.1±0.2
1.5±0.2
0.1
+
–0.05
4.0±0.1 2.0
3.1
2.6
12.0±0.3
5.5±0.05 1.75±0.1
4.0±0.1
5.5
Pull out direction
1.5+0.1
–0
13 ±0.5
2.0±0.5
21±0.8
R1.0
178±214±1. 5 2.0±0.5
65
Marking of Part No.,
Lot No., quantity, etc.
Taping Specifications
General-purpose Diodes - Taping Specifications
131
Taping
Name Taping Dimensions (mm)
Packaging Dimensions (mm) and Markings
Packaging
Quantity
A suffix "VR" is
added to Part
No. for tape
packaging.
VR
A suffix "VL" is
added to Part
No. for tape
packaging.
VL 3,000 pcs.
per reel
3,000 pcs.
per reel
5,000 pcs.
per reel
Taping
Name Taping Dimensions (mm)
Packaging Dimensions (mm) and Markings
Packaging
Quantity
A suffix "V1" is
added to Part
No. for tape
packaging.
V1
Axial taping
6±1.0 6±1.0
5±0.5
58
1.0max
1.2 max
±1
29±1.5
75±1.5
340±2
25±1
Power Surface-mount - Taping Specifications
High-voltage diodes for ignition - Taping Specifications
10.8±0.1
4±0.1 12±0.1
2±0.1
4.9±0.1
24±0.3
11.5±0.1 1.75±0.1
0.4±0.1
5.4max
2.5
±
0.1
(Bottom dimensions)
(Bottom dimensions)
21.5±0.1
14.4±0.1
(Cover tape)
(Seal part)
(Seal part)
+0.1
0
1.5
Pull out direction
Pull out direction
35°
120°
R135
10
10
22
20
40
60
80
9±0.5
2
±
0.5
21
±0.8
13
±
0.2
7
±
0.5
5
±0.5
13±0.5
330±2
100±1
13±0.2
25.5±1
29.5±1
138 138
B
Materials
Disc: both-face white
corrugated cardboard
Core: foamed styrol
Part No.
Quantity
Taping name
(type)
Lot No.
Part No.
Quantity
Lot No.
132
General-purpose Diodes - Taping Specifications
Taping
Name Taping Dimensions (mm)
Packaging Dimensions (mm) and Markings
Packaging
Quantity
A suffix "VR" is
added to Part
No. for tape
packaging.
VR
A suffix "VL" is
added to Part
No. for tape
packaging.
VL 750 pcs.
per reel
750 pcs.
per reel
The label showing the
product name, quantity
and production lot is
attached to the reel.
Power Zener Surface-mount - Taping Specifications
Pull out direction
Pull out direction
35°
120°
R135
10
10
22
20
40
60
80
9±0.5
2
±
0.5
21
±
0.8
13
±0.2
7
±
0.5
5
±
0.5
13±0.5
330±2
100±1
13±0.2
25.5±1
29.5±1
13B 13B
B
1.50±0.1
1.50±0.25
0.40±0.05
16.00±0.1
10.80±0.1
2.00±0.1
4.00±0.1
5.64±0.1
4°
4
°
1.75±0.1
11.50±0.1
16.00±0.1
24.00+0.3
–0.1
R TYPE L TYPE
8°
8°
133
3
LEDs
3-1. Uni-Color LED Lamps ..............
134
3-2. Bi-Color LED Lamps ..................
137
3-3. Surface Mount LEDs ..................
138
3-4. Infrared LEDs .....................................
140
3-5. Ultraviolet LEDs ...............................
141
3-6. Multi-chip Modules .....................
142
134
General-purpose LEDs
Uni-Color LED Lamps
Outline Emitting color Part No. Lens color VF
(V)
IV
(mcd)
typ max typ typ typ
Electro-optical characteristics (Ta=25ºC)
SEL1110R
SEL1110W
SEL1110S
SEL1610W
SEL1610C
SEL1210R
SEL1210S
SEL1810D
SEL1810A
SEL1910D
SEL1910A
SEL1710Y
SEL1710K
SEL1410G
SEL1410E
SEL1510C
SEL1210RM
SEL1210SM
SEL1810DM
SEL1810AM
SEL1910DM
SEL1910AM
SEL1710KM
SEL1410GM
SEL1410EM
SEL1510CM
SELU1210CXM
SELU1910CXM-S
SELU1D10CXM
SELU1E10CXM
SELS1E10CXM-M
SELU1250CM
SEL1250SM
SEL1250RM
SEL1850AM
SEL1850DM
SEL1950KM
SEL1450EKM
SEL1450GM-YG
SEL1550CM
SELU1D50CM
SELU1E50CM
SEL1615C
SELU1253CMKT
SEL1453CEMKT
SEL4110S
SEL4110R
SEL4210S
SEL4210R
SEL4810A
SEL4810D
SEL4910A
SEL4910D
SEL4710K
SEL4710Y
Diffused red
Diffused white
Tinted red
Diffused white
Clear
Diffused red
Tinted red
Diffused orange
Tinted orange
Diffused orange
Tinted orange
Diffused yellow
Tinted yellow
Diffused green
Tinted green
Clear
Diffused red
Tinted red
Diffused orange
Tinted orange
Diffused orange
Tinted orange
Tinted yellow
Diffused green
Tinted green
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Tinted red
Diffused red
Tinted orange
Diffused orange
Tinted orange
Tinted green
Diffused green
Clear
Clear
Clear
Clear
Clear
Tinted green
Tinted red
Diffused red
Tinted red
Diffused red
Tinted orange
Diffused orange
Tinted orange
Diffused orange
Tinted yellow
Diffused yellow
Deep red
High-intensity red
Red
Amber
Orange
Yellow
Green
Pure green
Red
Amber
Orange
Yellow
Green
Pure green
Ultra high-intensity red
Ultra high-intensity orange
Ultra high-intensity pure green
Ultra high-intensity blue
Ultra high-intensity blue
Ultra high-intensity red
Red
Amber
Orange
Green
Pure green
Ultra high-intensity pure green
Ultra high-intensity blue
High-intensity red
Ultra high-intensity red
Green
Deep red
Red
Amber
Orange
Yellow
2.0
1.75
1.9
1.9
1.9
2.0
2.0
2.0
1.9
1.9
1.9
2.0
2.0
2.0
2.0
2.0
3.3
3.3
3.7
2.0
1.9
1.9
1.9
2.0
2.0
3.3
3.3
1.75
2.0
2.0
2.0
1.9
1.9
1.9
2.0
2.5
2.2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
4.0
4.0
4.2
2.5
2.5
2.5
2.5
2.5
2.5
4.0
4.0
2.2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
700
660
630
610
587
570
560
555
630
610
587
570
560
555
635
591
525
468
468
635
630
610
587
560
555
525
468
660
635
560
700
630
610
587
570
625
642
620
605
590
571
567
559
620
605
590
571
567
559
625
589
530
470
470
625
620
605
590
567
559
530
470
642
625
567
625
620
605
590
571
1
2
3
4
5
6
7
2.8
2.8
4.5
250
300
26
75
18
37
14
25
22
65
32
84
50
36
75
18
37
19
34
65
30
84
50
280
450
2000
600
1000
900
75
48
90
60
96
190
120
72
6000
1850
170
200
140
2.4
1.7
30
17
20
15
26
16
36
14
5
20
20
10
10
10
20
20
20
10
10
10
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
5
20
10
10
10
GaP
GaA As
GaAsP
GaAsP
GaAsP
GaP
GaP
GaP
GaAsP
GaAsP
GaAsP
GaP
GaP
GaP
A GaInP
A GaInP
InGaN
InGaN
InGaN
A GaInP
GaAsP
GaAsP
GaAsP
GaP
GaP
InGaN
InGaN
GaA As
A GaInP
GaP
GaP
GaAsP
GaAsP
GaAsP
GaP
Chip
material
Parameter Unit Conditions
mW
mA
mA /ºC
mA
V
ºC
ºC
PD
IF
∆IF
IFP
VR
Top
Tstg
Ratings
GaP GaAsP GaA As A GaInP InGaN GaN
75 120
30
– 0.45 Above 25ºC
f=1kHz, tw=100µs
100 70
–30 to +80
53
–30 to +85
–30 to +100
(Ta=25ºC)
Absolute Maximum Ratings
Condition
IF
(mA)
Dominant wavelength
λp
(nm)
Peak wavelength
λp
(nm)
Contact
mount
Fig. No.
5 Round
4 Round
4.6✕5.6
Egg-shaped
135
Uni-Color LED Lamps
General-purpose LEDs
Outline Emitting color Part No. Lens color VF (V) IV
(mcd)
Peak wavelength
λp
(nm)
Condition
IF
(mA)
typ max typ typ typ
Electro-optical characteristics (Ta=25ºC)
Dominant wavelength
λp
(nm)
SEL4410E
SEL4410G
SELU4410CKT-S
SEL4510C
SEL4114S
SEL4114R
SEL4214S
SEL4214R
SEL4814A
SEL4814D
SEL4914A
SEL4914D
SEL4714K
SEL4714Y
SEL4414E
SEL4414G
SEL4514C
SEL6110S
SEL6110R
SEL6210S
SEL6210R
SEL6810A
SEL6810D
SELU6910C-S
SEL6910A
SEL6910D
SEL6710K
SEL6710Y
SEL6410E
SEL6410G
SEL6510C
SEL6510G
SEL6E10C
SELU6614C-S
SELU6614W-S
SELU6214C
SEL6214S
SEL6814A
SELS6B14C
SELU6914C-S
SEL6914A
SEL6914W
SELU6714C
SEL6714K
SEL6714W
SEL6414E
SELU6414G-S
SEL6414E-TG
SEL6514C
SELS6D14C
SELS6E14C-M
SEL6215S
SEL6915A
SEL6715C
SEL6415E
SEL6515C
SEL2110S
SEL2110R
SEL2110W
SEL2610C
SELU2610C-S
SEL2210S
SEL2210R
SEL2210W
SEL2810A
SEL2810D
SELU2B10A-S
Tinted green
Diffused green
Clear
Clear
Tinted red
Diffused red
Tinted red
Diffused red
Tinted orange
Diffused orange
Tinted orange
Diffused orange
Tinted yellow
Diffused yellow
Tinted green
Diffused green
Clear
Tinted red
Diffused red
Tinted red
Diffused red
Tinted orange
Diffused orange
Clear
Tinted orange
Diffused orange
Tinted yellow
Diffused yellow
Tinted green
Diffused green
Clear
Diffused green
Clear
Clear
Diffused white
Clear
Tinted red
Tinted orange
Clear
Clear
Tinted orange
Diffused white
Clear
Tinted yellow
Diffused white
Tinted green
Diffused green
Tinted green
Clear
Clear
Clear
Tinted red
Tinted orange
Clear
Tinted green
Clear
Tinted red
Diffused red
Diffused white
Clear
Clear
Tinted red
Diffused red
Diffused white
Tinted orange
Diffused orange
Tinted orange
Green
Ultra high-intensity green
Pure green
Deep red
Red
Amber
Orange
Yellow
Green
Pure green
Deep red
Red
Amber
Ultra high-intensity orange
Orange
Yellow
Green
Pure green
Blue
Ultra high-intensity red
Red
Amber
Ultra high-intensity light amber
Ultra high-intensity orange
Orange
Ultra high-intensity yellow
Yellow
Green
Ultra high-intensity green
Deep green
Pure green
Ultra high-intensity pure green
Ultra high-intensity blue
Red
Orange
Yellow
Green
Pure green
Deep red
High-intensity red
Ultra high-intensity deep red
Red
Amber
Ultra high-intensity light amber
2.0
2.1
2.0
2.0
1.9
1.9
1.9
2.0
2.0
2.0
2.0
1.9
1.9
2.0
1.9
2.0
2.0
2.0
4.0
2.0
2.0
1.9
1.9
2.
2.0
1.9
2.1
2.0
2.0
2.1
2.0
2.0
3.3
3.7
1.9
1.9
2.0
2.0
2.0
2.0
1.75
2.0
1.9
1.9
2.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
4.8
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
4.0
4.2
2.5
2.5
2.5
2.5
2.5
2.5
2.2
2.5
2.5
2.5
2.5
560
560
555
700
630
610
587
570
560
555
700
630
610
591
587
570
560
555
430
650
635
630
610
600
591
587
572
570
560
560
558
555
518
468
630
587
570
560
555
700
660
650
630
610
598
567
562
559
625
620
605
590
571
567
559
625
620
605
589
590
571
567
559
466
639
625
620
605
596
589
590
571
571
567
562
564
559
525
470
620
590
571
567
559
625
642
639
620
605
595
7
8
9
10
11
12
87
34
170
45
3.8
2.8
40
24
20
15
26
11
38
27
69
48
26
3.9
2.6
41
18
22
9.6
550
22
11
37
11
90
30
42
9.6
60
150
90
180
18
9.0
120
180
8.0
5.0
60
66
30
42
30
18
12
300
70
45
60
90
81
44
4
1.8
1.8
60
300
40
15
15
22
9.0
300
20
20
20
10
20
10
10
10
20
20
10
20
10
20
10
10
20
20
20
20
20
20
10
20
20
10
20
20
20
20
20
20
20
20
20
20
20
20
20
10
20
20
20
10
20
GaP
A GaInP
GaP
GaP
GaAsP
GaAsP
GaAsP
GaP
GaP
GaP
GaP
GaAsP
GaAsP
A GaInP
GaAsP
GaP
GaP
GaP
GaN
A GaInP
A GaInP
GaAsP
GaAsP
A GaInP
A GaInP
GaAsP
A GaInP
GaP
GaP
A GaInP
GaP
GaP
InGaN
InGaN
GaAsP
GaAsP
GaP
GaP
GaP
GaP
GaA As
A GaInP
GaAsP
GaAsP
A GaInP
Chip
material
Contact
mount
Fig. No.
4 Round
3 Round
Ultra high-intensity
deep red
136
Uni-Color LED Lamps
General-purpose LEDs
Outline Emitting color Part No. Lens color
typ max typ typ typ
SEL2910A
SEL2910D
SELU2710C
SEL2710K
SEL2710Y
SEL2410E
SEL2410G
SEL2510C
SEL2510G
SELU2D10C
SELU2E10C
SEL2E10C
SELU2215R-S
SEL2215S
SEL2215R
SEL2815A
SEL2815D
SEL2915A
SEL2915D
SEL2715K
SEL2715Y
SEL2415E
SEL2415G
SEL2515C
SEL1213C
SEL1813A
SEL1913K
SEL1713K
SEL1413E
SEL1513E
SELU6213C-S
SELS6B13W
SEL6413E
SEL6413E-TG
SEL6513C
SEL2613CS-S
SEL2213C
SEL2813A
SEL2913K
SEL2713K
SEL2413E
SEL2413G
SEL2513E
SEL5620C
SELU5620S-S
SELU5220C-S
SEL5220S
SELU5820C-S
SEL5820A
SELU5B20C
SEL5920A
SELU5720C
SEL5420E
SEL5520C
SEL5E20C
SELS5223C
SEL5223S
SEL5823A
SELS5B23C
SELS5923C
SEL5923A
SELU5723C
SEL5723C
SEL5423E
SEL5523C
SELU5E23C
SEL5E23C
Tinted orange
Diffused orange
Clear
Tinted yellow
Diffused yellow
Tinted green
Diffused green
Clear
Diffused green
Clear
Clear
Clear
Diffused red
Tinted red
Diffused red
Tinted orange
Diffused orange
Tinted orange
Diffused orange
Tinted yellow
Diffused yellow
Tinted green
Diffused green
Clear
Tinted red
Tinted orange
Tinted light orange
Tinted yellow
Tinted green
Tinted light green
Clear
Diffused white
Tinted green
Tinted green
Clear
Tinted light red
Tinted red
Tinted orange
Tinted orange
Tinted yellow
Tinted green
Diffused green
Tinted green
Clear
Tinted red
Clear
Tinted red
Clear
Tinted orange
Clear
Tinted orange
Clear
Tinted green
Clear
Clear
Clear
Tinted red
Tinted orange
Clear
Clear
Tinted orange
Clear
Clear
Tinted green
Clear
Clear
Clear
Orange
Ultra high-intensity yellow
Yellow
Green
Pure green
Ultra high-intensity pure green
Ultra high-intensity blue
Blue
Ultra high-intensity red
Red
Amber
Orange
Yellow
Green
Pure green
Red
Amber
Orange
Yellow
Green
Pure green
Ultra high-intensity red
Ultra high-intensity light amber
Green
Deep green
Pure green
High-intensity red
Red
Amber
Orange
Yellow
Green
Pure green
High-intensity red
Ultra high-intensity deep red
Ultra high-intensity red
Red
Ultra high-intensity amber
Amber
Ultra high-intensity light amber
Orange
Ultra high-intensity yellow
Green
Pure green
Blue
Ultra high-intensity red
Red
Amber
Ultra high-intensity light amber
Ultra high-intensity orange
Orange
Ultra high-intensity yellow
Yellow
Green
Pure green
Ultra high-intensity blue
Blue
1.9
2.1
2.0
2.0
2.0
3.3
3.3
4.0
2.0
1.9
1.9
1.9
2.0
2.0
2.0
1.9
1.9
1.9
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
1.75
1.9
1.9
1.9
2.0
2.0
2.0
1.75
2.0
2.0
1.9
2.0
1.9
2.0
1.9
2.1
2.0
2.0
4.0
2.0
1.9
1.9
2.0
2.0
1.9
2.1
2.0
2.0
2.0
3.3
4.0
2.5
2.5
2.5
2.5
2.5
4.0
4.0
4.8
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.2
2.5
2.5
2.5
2.5
2.5
2.5
2.2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
4.8
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
4.0
4.8
587
572
570
560
555
525
468
430
632
630
610
587
570
560
555
630
610
587
570
560
555
632
600
560
558
555
660
630
610
587
570
560
555
660
650
632
630
611
610
600
587
572
560
555
430
635
630
610
600
591
587
572
570
560
555
468
430
590
571
571
567
559
530
470
466
624
620
605
590
571
567
559
620
605
590
571
567
559
624
596
567
564
559
642
620
605
590
571
567
559
642
639
624
620
605
605
596
590
571
567
559
466
625
620
605
596
589
590
571
571
567
559
470
466
12
13
14
15
16
17
18
16
8.0
270
40
14
77
20
43
8.2
1200
400
60
380
45
38
80
60
81
53
130
110
110
72
52
7.0
8.0
8.0
15
12
5.0
30
60
14
6
5.0
20
7.0
8.0
8.0
17
14
12
5.0
100
100
120
20
150
12
120
12
50
20
6.0
10
100
25
35
135
145
35
155
60
40
13
180
20
10
20
10
20
20
20
20
20
20
20
10
10
10
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
GaAsP
A GaInP
GaP
GaP
GaP
InGaN
InGaN
GaN
A GaInP
GaAsP
GaAsP
GaAsP
GaP
GaP
GaP
GaAsP
GaAsP
GaAsP
GaP
GaP
GaP
A GaInP
A GaInP
GaP
GaP
GaP
GaA As
GaAsP
GaAsP
GaAsP
GaP
GaP
GaP
GaA As
A GaInP
A GaInP
GaAsP
A GaInP
GaAsP
A GaInP
GaAsP
A GaInP
GaP
GaP
GaN
A GaInP
GaAsP
GaAsP
A GaInP
A GaInP
GaAsP
A GaInP
GaP
GaP
GaP
InGaN
GaN
VF (V) IV
(mcd)
Peak wavelength
λp
(nm)
Condition
IF
(mA)
Electro-optical characteristics (Ta=25ºC)
Dominant wavelength
λp
(nm)
Chip
material
Contact
mount
Fig. No.
3 Round
Inverted-cone
typ for surface
illumination
5mm Pitch lead
rectangular
5mm Pitch lead
bow-shaped
137
General-purpose LEDs
Bi-Color LED Lamps
Outline Emitting colorPart No. Lens color
Common
typ max typ typ typ
Electro-optical characteristics (Ta=25ºC)
Parameter Unit Conditions
mW
mA
mA /ºC
mA
V
ºC
ºC
PD
IF
∆IF
IFP
VR
Top
Tstg
75 120
30
–0.45
Also applies to simultaneous lighting
Above 25ºC
f=1kHz, tw=100µs
100
53
–30 to +85
–30 to +100
(Ta=25ºC)
Absolute Maximum Ratings
SML11516C
SML1516W
SML1216C
SML1216W
SML1816W
SML19416W
SMLU12E16C
SMLU12E16W
SMLU12D16W
SMLU18D16C
SMLU18D16W-S
SML72420C
SML78420C
SML79420C
SML72423C
SML72923C
SML78423C
SML79423C
SMLS79723C
SMLU72423C-S
SMLU79423C-S
Clear
Diffused white
Clear
Diffused white
Diffused white
Diffused white
Clear
Diffused white
Diffused white
Clear
Diffused white
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Deep red
Pure green
Deep red
Pure green
Red
Green
Red
Green
Amber
Green
Orange
Green
Ultra high-intensity red
Ultra high-intensity blue
Ultra high-intensity red
Ultra high-intensity blue
Ultra high-intensity red
Ultra high-intensity pure green
Ultra high-intensity amber
Ultra high-intensity pure green
Ultra high-intensity amber
Ultra high-intensity pure green
Red
Green
Amber
Green
Orange
Green
Red
Green
Red
Orange
Amber
Green
Orange
Green
Ultra high-intensity orange
Yellow
Ultra high-intensity red
Ultra high-intensity green
Ultra high-intensity orange
Ultra high-intensity green
2.0
2.0
2.0
2.0
1.9
2.0
1.9
2.0
1.9
2.0
1.9
2.0
2.0
3.3
2.0
3.3
2.0
3.3
2.0
3.3
2.0
3.3
1.9
2.0
1.9
2.0
1.9
2.0
1.9
2.0
1.9
1.9
1.9
2.0
1.9
2.0
2.0
2.0
2.0
2.2
2.0
2.2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
4.0
2.5
4.0
2.5
4.0
2.5
4.0
2.5
4.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
700
555
700
555
630
560
630
560
610
560
587
560
632
468
632
468
632
525
611
525
611
525
630
560
610
560
587
560
630
560
630
587
610
560
587
560
590
570
635
560
590
560
625
559
625
559
620
567
620
567
605
567
590
567
624
470
624
470
624
530
605
530
605
530
620
567
605
567
590
567
620
567
620
590
605
567
590
657
590
571
625
567
590
567
19
20
21
15
50
6.0
20
65
90
60
60
50
60
45
60
500
400
250
150
250
700
800
2000
300
500
15
20
10
20
10
20
25
35
25
25
25
35
25
35
150
40
120
30
150
30
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
GaP
GaP
GaP
GaP
GaAsP
GaP
GaAsP
GaP
GaAsP
GaP
GaAsP
GaP
A GaInP
InGaN
A GaInP
InGaN
A GaInP
InGaN
A GaInP
InGaN
A GaInP
InGaN
AGaAsP
GaP
GaAsP
GaP
GaAsP
GaP
GaAsP
GaP
GaAsP
GaAsP
GaAsP
GaP
GaAsP
GaP
A GaInP
GaP
A GaInP
A GaInP
A GaInP
A GaInP
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Ratings
GaP GaAsP GaA As A GaInP InGaN
VF (V) IV
(mcd)
Peak wavelength
λp
(nm)
Condition
IF
(mA)
Dominant wavelength
λp
(nm)
Chip
material
Contact
mount
Fig. No.
5 Round
3.3✕6
Bow-shaped
3.3✕6
Rectangular
138
Outline Emitting color Part No. Lens color
typ max typ typ typ
SEC4201C
SEC4801C
SEC4901C
SEC4701C
SEC4401C
SEC4401E-TG
SEC4501C
SECU4E01C
SEC4203C
SEC4803C
SEC4903C
SEC4703C
SEC4403C
SEC4403E-TG
SEC4503C
SEC1101C
SEC1601C
SEC1201C
SEC1801C
SEC1901C
SEC1701C-YG
SEC1401C
SEC1401E-TG
SEC1501C
SECU1D01C
SECU1E01C
SEC1E01C
SEC1603C
SECS1203C
SEC1203C
SECS1803C
SEC1803C
SECS1903C
SEC1903C
SEC1703C
SEC1403C
SEC1403E-TG
SEC1503C
Clear
Clear
Clear
Clear
Clear
Tinted green
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Tinted green
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Tinted green
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Tinted green
Clear
Red
Amber
Orange
Yellow
Green
Deep green
Pure green
Ultra high-intensity blue
Red
Amber
Orange
Yellow
Green
Deep green
Pure green
Deep red
High-intensity red
Red
Amber
Orange
Yellow
Green
Deep green
Pure green
Ultra high-intensity pure green
Ultra high-intensity blue
Blue
High-intensity red
Ultra high-intensity red
Red
Ultra high-intensity amber
Amber
Ultra high-intensity orange
Orange
Yellow
Green
Deep green
Pure green
1.9
1.9
1.9
2.0
2.0
2.0
2.0
3.3
1.9
1.9
1.9
2.0
2.0
2.0
2.0
2.0
1.7
1.9
1.9
1.9
2.0
2.0
2.0
2.0
3.3
3.3
3.9
1.7
1.9
1.9
1.9
1.9
1.9
1.9
2.0
2.0
2.0
2.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
4.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
4.0
4.0
4.8
2.2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
630
610
587
570
560
558
555
468
630
610
587
570
560
558
555
700
660
630
610
587
570
560
558
555
525
470
430
660
635
630
615
610
590
587
570
560
558
555
620
605
590
571
567
564
559
470
620
605
590
571
567
564
559
625
642
620
605
590
571
567
564
559
525
468
466
642
625
620
607
605
590
590
571
567
564
559
22
23
24
25
10
16
13
25
22
11
8.0
50
15
20
15
35
33
15
10
1.5
25
10
16
13
25
22
11
8.0
150
50
6.0
35
100
15
10
20
70
15
35
33
15
10
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
3
20
20
20
20
20
20
20
GaAsP
GaAsP
GaAsP
GaP
GaP
GaP
GaP
InGaN
GaAsP
GaAsP
GaAsP
GaP
GaP
GaP
GaP
GaP
GaA As
GaAsP
GaAsP
GaAsP
GaP
GaP
GaP
GaP
InGaN
InGaN
GaN
GaA As
A GaInP
GaAsP
A GaInP
GaAsP
A GaInP
GaAsP
GaP
GaP
GaP
GaP
Surface Mount LEDs
Uni-Color Surface Mount LEDs
Parameter Unit Conditions
mA
mA /ºC
mA
V
ºC
ºC
IF
∆IF
IFP
VR
Top
Tstg
GaP GaAsP InGaN GaN
30
–0.45 Above 25ºC
f=1kHz, tw=100µs
70
54
–30 to +85 –25 to +85
–30 to +100
(Ta=25ºC)
Absolute Maximum Ratings
General-purpose LEDs
Ratings
GaA As A GaInP
Electro-optical characteristics (Ta=25ºC)
VF (V) IV
(mcd)
Peak wavelength
λp
(nm)
Condition
IF
(mA)
Dominant wavelength
λp
(nm)
Chip
material
Fig. No.
Side view
(flat lens type)
Side view
(inner lens type)
3✕1.5
(flat lens type)
3✕1.5
(inner lens type)
139
Uni-color / Bi-color Surface Mount LEDs with two elements
General-purpose LEDs
Outline Emitting colorPart No. Lens color
typ max typ typ typ
SEC2422C
SEC2442C
SEC2462C
SEC2492C
SEC2552C
SEC2592C
SEC2762C-YG
SEC2484C
SEC2554C
SEC2494C
SEC2764C
SEC2774C
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Red
Green
Green
Green
High-intensity red
Green
Orange
Green
Pure green
Pure green
Orange
Pure green
High-intensity red
Yellow
Amber
Green
Pure green
Pure green
Orange
Green
High-intensity red
Yellow
Yellow
Yellow
1.9
2.0
2.0
2.0
1.7
2.0
1.9
2.0
2.0
2.0
1.9
2.0
1.7
2.0
1.9
2.0
2.0
2.0
1.9
2.0
1.7
2.0
2.0
2.0
2.5
2.5
2.5
2.5
2.2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.2
2.5
2.5
2.5
630
560
560
560
660
560
587
560
555
555
587
555
660
570
610
560
555
555
587
560
660
570
570
570
620
567
567
567
642
567
590
567
559
559
590
559
642
571
605
567
559
559
590
567
642
571
571
571
26
27
10
20
20
20
20
20
10
20
5.0
5.0
10
5.0
20
20
20
30
10
10
20
30
50
50
50
50
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
GaAsP
GaP
GaP
GaP
GaA As
GaP
GaAsP
GaP
GaP
GaP
GaAsP
GaP
GaA As
GaP
GaAsP
GaP
GaP
GaP
GaAsP
GaP
GaA As
GaP
GaP
GaP
Surface Mount LEDs
Electro-optical characteristics (Ta=25ºC)
VF (V) IV
(mcd)
Peak wavelength
λp
(nm)
Condition
IF
(mA)
Dominant wavelength
λp
(nm)
Chip
material
Fig. No.
3✕2.5
(flat lens type)
3✕2.5
(inner lens type)
140
Infrared LEDs
Parameter Unit Conditions
mA
mA /ºC
mA
V
ºC
ºC
IF
∆IF
IFP
VR
Top
Tstg
Ratings
150
–1.33 Above 25ºC
f=1kHz, tw=10µs
1000
5
–30 to +85
–30 to +100
(Ta=25ºC)
Absolute Maximum Ratings
General-purpose LEDs
Outline Part No. Lens color (mW/sr)
typ max typ typ
(Constant
voltage)
Vcc
=
3V,
R
=
2.2Ω
IF
=
50mA
SID1010CM
SID1K10CM
SID1010CXM
SID1K10CXM
SID1050CM
SID303C
SID313BP
SID1003BQ
SID307BR
SID1G307C
SID1G313C
SID2010C
SID2K10C
SEC1G03C
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.5
1.5
1.3
1.3
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.8
1.8
1.5
1.5
1.8
940
940
940
940
940
940
940
940
940
850
850
940
940
850
130
200
80
110
250
80
130
180
200
50
50
7
14
3
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaA As
28
29
30
31
25
Infrared LEDs
Electro-optical characteristics (Ta=25ºC)
VF (V)
Peak wavelength
λp
(nm)
Condition
Chip
material
Contact
mount
Fig. No.
3✕1.5
(inner lens type)
chip
3 Round
5 Round
Transparent
light purple
Transparent
light navy blue
Transparent
dark navy blue
Radiant intensity Ie
141
General-purpose LEDs
Outline Part No. Lens color
I
V
(
mcd
)
Condition
I
F
(
mA
)
typ max typ typ typ
SECU1V0AC Clear2.8 ✕3.5 3.7 4.0 385 40002.2 20 100pF, 1.5kΩInGaN 32
Ultraviolet LEDs
Ultraviolet Surface Mount LEDs
Parameter Unit Conditions
mA
mA /ºC
mA
mA
ºC
ºC
IF
∆IF
IFP
IR
Top
Tstg
Ratings
30
–0.45
100
100
–30 to +85
–30 to +100
Absolute Maximum Ratings
Electrostatic withstand voltage
(Ta=25ºC)
Above 25ºC
f=1kHz, tw=10µs
Max. rating of built-in Zener diode
Electro-optical characteristics (Ta=25ºC)
VF (V)
Peak wavelength
λp
(nm)
Condition
Chip
material
Fig. No.
(V)
Part No. Fig. No.
Colors compliant
with JIS-Z9112
SEP8WD4001
SEP8WN4001
SEP8WE4001
SEP8WW4001
SEP8WL4001
Cool white
Natural white
White
Warm white
Light bulb
Color temperature
[°K]
20mA
6400
5000
4200
3450
2875
Total flux [lm]
20mA
30
30
30
25
25
Chromaticity x, y
20mA
0.32, 0.33
0.34, 0.35
0.37, 0.37
0.41, 0.38
0.44, 0.41
33
Multi-chip LED Module (under development)
Parameter Unit Conditions
mA
mA /ºC
mA
V
ºC
ºC
IF
∆IF
IFP
VR
Topr
Tstg
Ratings
40
–0.25
100
5
–30 to +85
–30 to +100
Absolute Maximum Ratings
142
General-purpose LEDs
(Per element Ta=25ºC)
With an infinite heatsink mounted
f=1kHz, tw=10µs
Fig.1
Fig.2
Fig.3
Fig.4
Fig.5
Fig.6
Fig.7
Fig.8
Fig.9
Fig.10
General-purpose LEDs - External Dimensions
5.6±0.2 20.0min 5.0±0.5 7.6±0.2
19.0min 0.8 (1.0)
Cathode
0.5
(2.54)
0.5
1.1max
0.8
Resin heap 1.5max
5.0±0.2
0.5±0.1
Anode
Cathode
1.0min 21.0min 9.4±0.3
5.0±0.2
Resin heap 0.8maxResin burr 0.3max
0.65
max
0.5±0.1
(2.54)
5.6±0.2 20.0min 5.5±0.5 8.2±0.2
19.0min 0.8 (1.0)
Cathode
0.5±0.1
1.1max
0.8
Resin heap 1.5max
5.0±0.2
0.5
(2.54)
5.6±0.2 23.0min1.0min 6.9±0.2
Cathode
0.65max
Resin heap 1.5max
5.0±0.2
(2.54)
0.5±0.1
(1.0)
0.5±0.1
5.6±0.2 23.0min1.0min 7.6±0.2
Cathode
0.65max
Resin heap 1.5max
5.0±0.2
0.5±0.1
0.5±0.1
(1.0)
(2.54)
5.6±0.2
Resin burr 0.3max
4.6±0.2
1.0min 23.5min
Cathode
Anode 7.7±0.5
(2.54)
0.65max
4.7±0.2
5.7±0.2
2-0.5±0.1
0.5±0.1
Resin heap 1.5max
143
2.2
4.8
0.4±0.1
(2.54)
0.45±0.1
1.1max
Resin heap 1.5max
Cathode
1.0min 25.5min 5.0±0.2
6.5±0.5
0.8 1.5
4.0±0.2
2.2
4.8
(2.54)
0.45±0.1
0.65max
Resin heap 0.8max
1.0min 24.5min 5.0±0.2
4.0±0.2
(1.5)
0.4±0.1
Cathode
3.5
0.8±0.2
4.0±0.2
0.4±0.1
23.0min1.0min 5.5±0.5
(1.7) 3.5±0.1
(2.54)
3.1±0.1
4.4
0.45±0.1
0.65max
Resin heap
0.8max
Cathode
3.5
0.8±0.2
4.0±0.2
0.4±0.1
23.0min1.0min 4.5±0.5
(1.6) 2.5±0.1
(2.54)
3.5
4.4
0.45±0.1
0.65max
Resin heap
0.8max
Cathode
(Unit: mm)
Fig.11
Fig.12
Fig.13
Fig.14
Fig.15
Fig.16
Fig.17
Fig.18
Fig.19
Fig.20
144
General-purpose LEDs - External Dimensions
3.5 5.5
0.8±0.2
4.0±0.2
0.4±0.1
23.0min1.0min
(1.7) 3.5±0.1
(2.54)
3.1±0.1
4.4
0.45±0.1
0.65max
Resin heap
0.8max
Resin burr
0.3max
Cathode mark
Cathode
1.7
3.8
0.4
1.0min 25.8min 3.5±0.1
(1.3)
0.45±0.1
0.65max
Resin heap 1.5max
3.1±0.1
Cathode
(2.54)
1.55
3.8
0.4±0.1
1.0min 25.4min 4.0±0.1
(1.3)
(2.54)
0.45±0.1
0.65max
Resin heap 1.5max
3.1±0.1
Cathode
1.7
3.8±0.1
0.4
(2.54)
1.0min 25.8min 2.6±0.1
(1.3)
0.45±0.1
0.65max
Resin heap 1.5max
Resin burr 0.3max
3.1±0.1
Cathode
0.4±0.1
23.0min 4.51.0min
3.5
2.5±0.1
(1.7)
0.45±0.1
0.8±0.2
4.0±0.2
4.4
0.65max
Resin heap 0.8max
Resin burr 0.3max
3.5±0.1
(2.54)
0.4±0.1
Cathode
5.6±0.2 20.0min 5.0±0.5 5.8±0.2
19.0min 0.8 (1.0)
0.5
0.5±0.1
1.1max
0.8
Resin heap 1.5max
4.9±0.2
Cathode
(2.54)
6.2
1.4
3.6
(5.0)
4.2±0.5
23.0min1.0min
6.0±0.2
0.5±0.1
0.65max
Resin heap 0.8max
Resin burr 0.3max
Cathode
3.3±0.2
0.5±0.1
Cathode mark
6.2
1.4
3.6
(5.0)
5.8±0.5
23.0min1.0min
3.9
0.5+0.1
0.65max
Resin heap 0.8max
Resin burr 0.3max
Cathode mark
Cathode
0.5±0.1
3.6±0.2
6.0±0.2
3.1
1.0min 17.0min 10.6±0.5
1.5min
2.0±0.5 7.6±0.2
1.0
0.5±0.1
5.8±0.2
(2.54)(2.54)
Resin heap 1.5max
Resin burr 0.3max
5.0±0.2
1.2
0.8
3 – 0.5±0.1
0.65max
3.920.0min1.0min
3.3
0.5+0.1
6.0±0.2
6.2
1.5min
3.6
0.5±0.1
0.65max
Resin heap 1.5max
Resin burr 0.3max
(2.54)(2.54)
(Unit: mm)
Fig.21
Fig.22
Fig.23
Fig.24
Fig.25
Fig.26
Fig.27
Fig.28
Fig.29
General-purpose LEDs - External Dimensions
145
3.920.0min1.0min
3.1±0.2
0.5±0.1
6.0±0.2
6.2
1.5min
3.6
0.5±0.1
0.65max
Resin heap 1.5max
Resin burr 0.3max
3.6±0.2
5.8±0.5
(2.54)(2.54)
1.5
3.0
Cathode
mark
2.0
1.5
0.9 (0.5)
1.4
Resin
P.C.B.
Anode
Cathode
1.6 0.6
1.3
1.5
3.0
2.0
1.7
1.4
(0.5)0.9
1.6 0.6
1.3
Lens Resin Anode
Cathode
Cathode
mark
P.C.B.
1.0
2.5
1.5
3.0
2.0
1.5
1.4±0.1
1.01.0
0.90.6±0.1
P.C.B.
Anode
Cathode
Cathode
mark 0.9 (0.5)
Resin
AB
2.5
1.5
0.8
1.8
3.0
2.0
1.5
1.4±0.1
1.01.0
0.90.6±0.1
Lens
P.C.B.
Anode
Cathode
Cathode
mark 0.9 (0.5)
Resin
AB
5.6±0.2 23.0min1.0min A
Cathode
0.65max
Resin heap 1.5max
Resin burr 0.3max
5.0±0.2
0.5±0.1
0.5±0.1
(1.0)
(2.54)
0.5±0.1
0.5±0.1
Anode
Cathode
1.0min 21.0min 9.4±0.3
5.0±0.2
Resin heap 0.8max
Resin burr 0.3max
0.65
max
0.5±0.1
0.5±0.1
(2.54)
Cathode mark Resin
P.C.B.
Anode
Cathode
MAX 0.1
3.0
1.5
4-R0.35
1.0
2.5
(1.6)
(0.6)
1.5
2.0
0.9
1.4
(0.5)
±0.1
SEC4001
Cathode
mark
Resin
P.C.B. Anode
Cathode
MAX 0.1
±0.1
0.45
0.6
1.03
2.53
Lens
0.9
1.4
1.7
ø1.0
2.0
1.6
(0.5)
1.5
3.0
1.3
SEC4003
7.6±0.2
6.9±0.2
SID1010CM
SID1K10CM
SID1010CXM
SID1K10CXM
Electrode burr
(Unit: mm)
Dimension A (mm)
Electrode burr
Fig.30
Fig.31
Fig.32
Fig.33
146
General-purpose LEDs - External Dimensions
1.7
ø
3.8
0.4
1.0min 25.8min 3.5±0.1
(1.3)
0.45±0.1
0.65max
Resin burr 0.3max
Resin heap 1.5max
3.1±0.1
Cathode
(2.54)
0.4±0.1
5.6
24.0min 8.5±0.5
Anode
(2.54)
0.6±0.1
1.1max
0.85+0.1
Resin heap 1.5max
0.6±0.1
0.6±0.1
Resin burr 0.3max
4.8±0.2
Cathode
2.0min
(0.8)A
3.5
0.8
1.4
3.2
(2.7)
2.8
2.6
(2.4)
Cathode Mark
Cathode
Cathode
Anode
Anode
Surface Side view
Side view
Reverse Side
Inner circuit
0.2
ZD
LED
8.8 ±0.3
(0.7)
(0.8)
3.5
(0.5)
±0.05
0.2
±0.05
0.3 ±0.25
P1.0*3=3.0
±0.25
3.0
4.8
12.0
Mark
Heatsink
Resin: color White
4.4
5.8
2.0
10.0
13.2
12 11
10
56 7 8
3 42
16 1 5 14 13 9
1Resin
Dimension A (mm)
SID303C 3.0
±
0.5
3.6
±
0.5
4.2
±
0.5
SID313BP
SID1003BQ
SID307BR
SID1G307C
(Unit: mm)
147
Power transistor
Power transistor
Power transistor
Power transistor
Power transistor
Power transistor
Power transistor
Power transistor
Power transistor
Power transistor
Power transistor
Power transistor
MOS FET
MOS FET
MOS FET
MOS FET
MOS FET
MOS FET
MOS FET
MOS FET
MOS FET
Power transistor
Power transistor
Power transistor
Ultrafast Recovery Diode (Surface Mount)
Ultrafast Recovery Diode (Surface Mount)
Power Zener Diode (Surface Mount)
Power transistor Array (Surface Mount)
Power transistor Array (Surface Mount)
Power transistor Array (Surface Mount)
High-side Power Switch IC
MOS FET Array ( Surface mount )
MOS FET Array ( Surface mount )
MOS FET Array ( Surface mount )
3 x 1.5 Surface Mount LED
3 x 1.5 Surface Mount LED
3 x 1.5 Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount LED
3 x 1.5 Surface Mount LED
3 x 1.5 Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount LED
3 x 1.5 Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount LED
3 x 1.5 Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount LED
3 x 1.5 Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount LED
3 x 1.5 Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount LED
3 x 1.5 Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount LED
3 x 1.5 Infrared Surface Mount Inner Lens Type LED
2SA1488/A
2SA1567
2SA1568
2SA1908
2SB1622
2SC3852
2SC4024
2SC4065
2SC4153
2SD2141
2SD2382
2SD2633
2SK3710
2SK3711
2SK3724
2SK3800
2SK3801
2SK3803
2SK3851
FKV460S
FKV660S
FP812
MN611S
MN638S
MP2-202S
MPL-102S
PZ628
SDA03
SDA04
SDC09
SDH04
SDK06
SDK08
SDK09
SEC1101C
SEC1201C
SEC1203C
SEC1401C
SEC1401E-TG
SEC1403C
SEC1403E-TG
SEC1501C
SEC1503C
SEC1601C
SEC1603C
SEC1701C-YG
SEC1703C
SEC1801C
SEC1803C
SEC1901C
SEC1903C
SEC1E01C
SEC1G03C
80
81
82
83
84
85
86
87
88
89
90
91
108
109
110
111
112
113
114
115
116
92
93
94
130
130
129
96
97
98
24
117
118
119
138
138
138
138
138
138
138
138
138
138
138
138
138
138
138
138
138
138
140
3 x 2.5 Surface Mount 2-Chip LED
3 x 2.5 Surface Mount 2-Chip LED
3 x 2.5 Surface Mount 2-Chip LED
3 x 2.5 Surface Mount Inner Lens Type
2-Chip LED
3 x 2.5 Surface Mount 2-Chip LED
3 x 2.5 Surface Mount Inner Lens Type
2-Chip LED
3 x 2.5 Surface Mount 2-Chip LED
3 x 2.5 Surface Mount Inner Lens Type
2-Chip LED
3 x 2.5 Surface Mount 2-Chip LED
3 x 2.5 Surface Mount 2-Chip LED
3 x 2.5 Surface Mount Inner Lens Type
2-Chip LED
3 x 2.5 Surface Mount Inner Lens Type
2-Chip LED
Side-view Surface Mount LED
Side-view Surface Mount Inner Lens TypeLED
Side-view Surface Mount LED
Side-view Surface Mount LED
Side-view Surface Mount Inner Lens TypeLED
Side-view Surface Mount Inner Lens TypeLED
Side-view Surface Mount LED
Side-view Surface Mount Inner Lens TypeLED
Side-view Surface Mount LED
Side-view Surface Mount Inner Lens TypeLED
Side-view Surface Mount LED
Side-view Surface Mount Inner Lens TypeLED
Side-view Surface Mount LED
Side-view Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount LED
3 x 1.5 Surface Mount LED
2.8 x 3.5 Ultraviolet Surface Mount LED
Side-view Surface Mount LED
5ø Round Standard LED (With Stopper)
5ø Round Standard LED (With Stopper)
5ø Round Standard LED (With Stopper)
5ø Round Standard LED (With Stopper)
5ø Round Standard LED
5ø Round Standard LED (With Stopper)
5ø Round Standard LED
5ø Inverted-cone LED for Surface illumination
5ø Round Narrow-directivity LED, Direct
mount supported
5ø Round Narrow-directivity LED, Direct
mount supported
5ø Round Standard LED (With Stopper)
5ø Round Standard LED
5ø Round Standard LED (With Stopper)
5ø Round Standard LED
5ø Inverted-cone LED for Surface illumination
5ø Round Narrow-directivity LED, Direct
mount supported
5ø Round Narrow-directivity LED, Direct
mount supported
4.6 x 5.6ø Egg-shaped LED
5ø Round Standard LED (With Stopper)
5ø Round Standard LED
SEC2422C
SEC2442C
SEC2462C
SEC2484C
SEC2492C
SEC2494C
SEC2552C
SEC2554C
SEC2592C
SEC2762C-YG
SEC2764C
SEC2774C
SEC4201C
SEC4203C
SEC4401C
SEC4401E-TG
SEC4403C
SEC4403E-TG
SEC4501C
SEC4503C
SEC4701C
SEC4703C
SEC4801C
SEC4803C
SEC4901C
SEC4903C
SECS1203C
SECS1803C
SECS1903C
SECU1D01C
SECU1E01C
SECU1V0AC
SECU4E01C
SEL1110R
SEL1110S
SEL1110W
SEL1210R
SEL1210RM
SEL1210S
SEL1210SM
SEL1213C
SEL1250RM
SEL1250SM
SEL1410E
SEL1410EM
SEL1410G
SEL1410GM
SEL1413E
SEL1450EKM
SEL1450GM-YG
SEL1453CEMKT
SEL1510C
SEL1510CM
139
139
139
139
139
139
139
139
139
139
139
139
138
138
138
138
138
138
138
138
138
138
138
138
138
138
138
138
138
138
138
141
138
134
134
134
134
134
134
134
136
134
134
134
134
134
134
136
134
134
134
134
134
5
ø
Inverted-cone LED for Surface illumination
5ø Round Narrow-directivity LED, Direct
mount supported
5ø Round Standard LED (With Stopper)
5ø Round Standard LED (With Stopper)
5ø Round Narrow-directivity LED
5ø Round Standard LED (With Stopper)
5ø Round Standard LED
5ø Round Standard LED (With Stopper)
5ø Inverted-cone LED for Surface illumination
5ø Round Standard LED (With Stopper)
5ø Round Standard LED
5ø Round Standard LED (With Stopper)
5ø Round Standard LED
5ø Inverted-cone LED for Surface illumination
5ø Round Narrow-directivity LED, Direct
mount supported
5ø Round Narrow-directivity LED, Direct
mount supported
5ø Round Standard LED (With Stopper)
5ø Round Standard LED
5ø Round Standard LED (With Stopper)
5ø Round Standard LED
5ø Inverted-cone LED for Surface illumination
5ø Round Narrow-directivity LED, Direct
mount supported
3ø Round Type LED
3ø Round Type LED
3ø Round Type LED
3ø Round Type LED
3ø Round Type LED
3ø Round Type LED
3ø Inverted-cone LED for Surface illumination
3ø Round Type Narrow-directivity LED
3ø Round Type Narrow-directivity LED
3ø Round Type LED
3ø Round Type LED
3ø Inverted-cone LED for Surface illumination
3ø Inverted-cone LED for Surface illumination
3ø Round Type Narrow-directivity LED
3ø Round Type Narrow-directivity LED
3ø Round Type LED
3ø Round Type LED
3ø Inverted-cone LED for Surface illumination
3ø Round Type Narrow-directivity LED
3ø Round Type LED
3ø Inverted-cone LED for Surface illumination
3ø Round Type LED
3ø Round Type LED
3ø Inverted-cone LED for Surface illumination
3ø Round Type Narrow-directivity LED
3ø Round Type Narrow-directivity LED
3ø Round Type LED
3ø Round Type LED
3ø Inverted-cone LED for Surface illumination
3ø Round Type Narrow-directivity LED
3ø Round Type Narrow-directivity LED
SEL1513E
SEL1550CM
SEL1610C
SEL1610W
SEL1615C
SEL1710K
SEL1710KM
SEL1710Y
SEL1713K
SEL1810A
SEL1810AM
SEL1810D
SEL1810DM
SEL1813A
SEL1850AM
SEL1850DM
SEL1910A
SEL1910AM
SEL1910D
SEL1910DM
SEL1913K
SEL1950KM
SEL2110R
SEL2110S
SEL2110W
SEL2210R
SEL2210S
SEL2210W
SEL2213C
SEL2215R
SEL2215S
SEL2410E
SEL2410G
SEL2413E
SEL2413G
SEL2415E
SEL2415G
SEL2510C
SEL2510G
SEL2513E
SEL2515C
SEL2610C
SEL2613CS-S
SEL2710K
SEL2710Y
SEL2713K
SEL2715K
SEL2715Y
SEL2810A
SEL2810D
SEL2813A
SEL2815A
SEL2815D
136
134
134
134
134
134
134
134
136
134
134
134
134
136
134
134
134
134
134
134
136
134
135
135
135
135
135
135
136
136
136
136
136
136
136
136
136
136
136
136
136
135
136
136
136
136
136
136
135
135
136
136
136
Part Number Index in Alphanumeric Order
Part No. Description Page Part No. Description Page Part No. Description Page
3ø Round Type LED
3ø Round Type LED
3ø Inverted-cone LED for Surface illumination
3ø Round Type Narrow-directivity LED
3ø Round Type Narrow-directivity LED
3ø Round Type LED
4ø Round Type LED
4ø Round Type LED
4ø Round Type Wide-directivity LED,
Direct mount supported
4ø Round Type Wide-directivity LED,
Direct mount supported
4ø Round Type LED
4ø Round Type LED
4ø Round Type Wide-directivity LED,
Direct mount supported
4ø Round Type Wide-directivity LED,
Direct mount supported
4ø Round Type LED
4ø Round Type LED
4ø Round Type Wide-directivity LED,
Direct mount supported
4ø Round Type Wide-directivity LED,
Direct mount supported
4ø Round Type LED
4ø Round Type Wide-directivity LED,
Direct mount supported
4ø Round Type LED
4ø Round Type LED
4ø Round Type Wide-directivity LED,
Direct mount supported
4ø Round Type Wide-directivity LED,
Direct mount supported
4ø Round Type LED
4ø Round Type LED
4ø Round Type Wide-directivity LED,
Direct mount supported
4ø Round Type Wide-directivity LED,
Direct mount supported
4ø Round Type LED
4ø Round Type LED
4ø Round Type Wide-directivity LED,
Direct mount supported
4ø Round Type Wide-directivity LED,
Direct mount supported
5mm Pitch Lead Rectangular LED,
Direct mount supported
5mm Pitch Lead Bow-shaped LED,
Direct mount supported
5mm Pitch Lead Rectangular LED,
Direct mount supported
5mm Pitch Lead Bow-shaped LED,
Direct mount supported
5mm Pitch Lead Rectangular LED,
Direct mount supported
5mm Pitch Lead Bow-shaped LED,
Direct mount supported
5mm Pitch Lead Rectangular LED,
Direct mount supported
5mm Pitch Lead Bow-shaped LED,
Direct mount supported
5mm Pitch Lead Rectangular LED,
Direct mount supported
5mm Pitch Lead Bow-shaped LED,
Direct mount supported
5mm Pitch Lead Rectangular LED,
Direct mount supported
5mm Pitch Lead Bow-shaped LED,
Direct mount supported
5mm Pitch Lead Rectangular LED,
Direct mount supported
5mm Pitch Lead Bow-shaped LED,
Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type Wide-directivity LED,
Direct mount supported
3ø Round Type Narrow-directivity LED,
Direct mount supported
3ø Round Type LED, Direct mount supported
SEL2910A
SEL2910D
SEL2913K
SEL2915A
SEL2915D
SEL2E10C
SEL4110R
SEL4110S
SEL4114R
SEL4114S
SEL4210R
SEL4210S
SEL4214R
SEL4214S
SEL4410E
SEL4410G
SEL4414E
SEL4414G
SEL4510C
SEL4514C
SEL4710K
SEL4710Y
SEL4714K
SEL4714Y
SEL4810A
SEL4810D
SEL4814A
SEL4814D
SEL4910A
SEL4910D
SEL4914A
SEL4914D
SEL5220S
SEL5223S
SEL5420E
SEL5423E
SEL5520C
SEL5523C
SEL5620C
SEL5723C
SEL5820A
SEL5823A
SEL5920A
SEL5923A
SEL5E20C
SEL5E23C
SEL6110R
SEL6110S
SEL6210R
SEL6210S
SEL6214S
SEL6215S
SEL6410E
3ø Round Type LED, Direct mount supported
3ø Inverted-cone LED for Surface illumination,
Direct mount supported
3ø Inverted-cone LED for Surface illumination,
Direct mount supported
3ø Round Type Wide-directivity LED,
Direct mount supported
3ø Round Type Wide-directivity LED,
Direct mount supported
3ø Round Type Narrow-directivity LED,
Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Inverted-cone LED for Surface illumination,
Direct mount supported
3ø Round Type Wide-directivity LED,
Direct mount supported
3ø Round Type Narrow-directivity LED,
Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type Wide-directivity LED,
Direct mount supported
3ø Round Type Wide-directivity LED,
Direct mount supported
3ø Round Type Narrow-directivity LED,
Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type Wide-directivity LED,
Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type Wide-directivity LED,
Direct mount supported
3ø Round Type Wide-directivity LED,
Direct mount supported
3ø Round Type Narrow-directivity LED,
Direct mount supported
3ø Round Type LED, Direct mount supported
5ø Round Wide-directivity LED
5mm Pitch Lead Bow-shaped LED,
Direct mount supported
5mm Pitch Lead Bow-shaped LED,
Direct mount supported
5mm Pitch Lead Bow-shaped LED,
Direct mount supported
3ø Inverted-cone LED for Surface illumination,
Direct mount supported
3ø Round Type Wide-directivity LED,
Direct mount supported
3ø Round Type Wide-directivity LED,
Direct mount supported
3ø Round Type Wide-directivity LED,
Direct mount supported
5ø Round Wide-directivity LED
5ø Round Narrow-directivity LED,
Direct mount supported
4.6 x 5.6ø Egg-shaped LED
5ø Round Wide-directivity LED
5ø Round Wide-directivity LED
5ø Round Narrow-directivity LED,
Direct mount supported
5ø Round Wide-directivity LED
5ø Round Narrow-directivity LED,
Direct mount supported
3ø Round Type Narrow-directivity LED
3ø Round Type LED
3ø Round Type LED
3ø Round Type LED
3ø Round Type LED
3ø Round Type LED
4ø Round Type LED
5mm Pitch Lead Rectangular LED,
Direct mount supported
5mm Pitch Lead Rectangular LED,
Direct mount supported
5mm Pitch Lead Rectangular LED,
Direct mount supported
5mm Pitch Lead Bow-shaped LED,
Direct mount supported
5mm Pitch Lead Rectangular LED,
Direct mount supported
SEL6410G
SEL6413E
SEL6413E-TG
SEL6414E
SEL6414E-TG
SEL6415E
SEL6510C
SEL6510G
SEL6513C
SEL6514C
SEL6515C
SEL6710K
SEL6710Y
SEL6714K
SEL6714W
SEL6715C
SEL6810A
SEL6810D
SEL6814A
SEL6910A
SEL6910D
SEL6914A
SEL6914W
SEL6915A
SEL6E10C
SELS1E10CXM-M
SELS5223C
SELS5923C
SELS5B23C
SELS6B13W
SELS6B14C
SELS6D14C
SELS6E14C-M
SELU1210CXM
SELU1250CM
SELU1253CMKT
SELU1910CXM-S
SELU1D10CXM
SELU1D50CM
SELU1E10CXM
SELU1E50CM
SELU2215R-S
SELU2610C-S
SELU2710C
SELU2B10A-S
SELU2D10C
SELU2E10C
SELU4410CKT-S
SELU5220C-S
SELU5620S-S
SELU5720C
SELU5723C
SELU5820C-S
135
136
136
135
135
135
135
135
136
135
135
135
135
135
135
135
135
135
135
135
135
135
135
135
135
134
136
136
136
136
135
135
135
134
134
134
134
134
134
134
134
136
135
136
135
136
136
135
136
136
136
136
136
136
136
136
136
136
136
134
134
135
135
134
134
135
135
135
135
135
135
135
135
134
134
135
135
134
134
135
135
134
134
135
135
136
136
136
136
136
136
136
136
136
136
136
136
136
136
135
135
135
135
135
135
135
5mm Pitch Lead Rectangular LED,
Direct mount supported
5mm Pitch Lead Bow-shaped LED,
Direct mount supported
3ø Inverted-cone LED for Surface illumination,
Direct mount supported
3ø Round Type Wide-directivity LED,
Direct mount supported
3ø Round Type Wide-directivity LED,
Direct mount supported
3ø Round Type Wide-directivity LED,
Direct mount supported
3ø Round Type Wide-directivity LED,
Direct mount supported
3ø Round Type Wide-directivity LED,
Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type Wide-directivity LED,
Direct mount supported
Multi-chip LED Module
Multi-chip LED Module
Multi-chip LED Module
Multi-chip LED Module
Multi-chip LED Module
Schottky Barrier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Ultrafast Recovery Diode(Surface Mount)
Ultrafast Recovery Diode(Surface Mount)
Ultrafast Recovery Diode(Surface Mount)
Rectifier Diode(Surface Mount)
Rectifier Diode(Surface Mount)
Rectifier Diode(Surface Mount)
Rectifier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Power Zener Diode
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
SELU5B20C
SELU5E23C
SELU6213C-S
SELU6214C
SELU6414G-S
SELU6614C-S
SELU6614W-S
SELU6714C
SELU6910C-S
SELU6914C-S
SEP8WD4001
SEP8WE4001
SEP8WL4001
SEP8WN4001
SEP8WW4001
SFPB-54
SFPB-56
SFPB-59
SFPB-64
SFPB-66
SFPB-69
SFPB-74
SFPB-76
SFPE-64
SFPJ-53
SFPJ-63
SFPJ-73
SFPL-52
SFPL-62
SFPL-64
SFPM-52
SFPM-54
SFPM-62
SFPM-64
SFPW-56
SFPZ-68
SG-9CNR
SG-9CNS
SG-9CZR
SG-9CZS
SG-9LCNR
SG-9LCNS
SG-9LLCNR
SG-9LLCNS
SG-9LLCZR
SG-9LLCZS
SG-10LLR
SG-10LLS
SG-10LLXR
SG-10LLXS
SG-10LLZ23R
SG-10LLZ23S
SG-10LR
136
136
136
135
135
135
135
135
135
135
142
142
142
142
142
130
130
130
130
130
130
130
130
130
130
130
130
130
130
130
130
130
130
130
130
129
127
127
127
127
127
127
127
127
127
127
127
127
127
127
127
127
127
148
Part Number Index in Alphanumeric Order
Part No. Description Page Part No. Description Page Part No. Description Page
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
High-Voltage Rectifier Diode for Ignition Coil
High-Voltage Rectifier Diode for Ignition Coil
High-Voltage Rectifier Diode for Ignition Coil
Linear Regulator IC
Linear Regulator IC
Linear Regulator IC
Linear Regulator IC
Switching Regulator IC
System Regulator IC
High-side Power Switch IC
High-side Power Switch IC
High-side Power Switch IC
High-side Power Switch IC
High-side Power Switch IC
Full-bridge Motor Driver IC
5ø Round Infrade LED
5ø Round Infrade LED
5ø Round Infrade LED
5ø Round Infrade LED, Direct mount supported
5ø Round Infrade LED
5ø Round Infrade LED
5ø Round Infrade LED
5ø Round Infrade LED
3ø Round Infrade LED
3ø Round Infrade LED
5ø Round Infrade LED
5ø Round Infrade LED
5ø Round Infrade LED
Power Zener Diode (Surface Mount)
Power Zener Diode (Surface Mount)
Power Zener Diode (Surface Mount)
Power Zener Diode (Surface Mount)
Power Zener Diode (Surface Mount)
High Voltage Driver IC for HID Lamps
High Voltage Driver IC for HID Lamps
High-side Power Switch IC
High-side Power Switch IC
Stepper-motor Driver IC
MOS FET Array
MOS FET Array
Power transistor Array
High Voltage Driver IC for HID Lamps
MOS FET Array
5ø Round Standard Bicolor LED
5ø Round Standard Bicolor LED
5ø Round Standard Bicolor LED
SG-10LS
SG-10LXR
SG-10LXS
SG-10LZ23R
SG-10LZ23S
SG-14LXZS
SG-14LXZS
SHV-01JN
SHV-05J
SHV-06JN
SI-3001S
SI-3003S
SI-3101S
SI-3102S
SI-3201S
SI-3322S
SI-5151S
SI-5152S
SI-5153S
SI-5154S
SI-5155S
SI-5300
SID1003BQ
SID1010CM
SID1010CXM
SID1050CM
SID1G307C
SID1G313C
SID1K10CM
SID1K10CXM
SID2010C
SID2K10C
SID303C
SID307BR
SID313BP
SJPZ-E18
SJPZ-E27
SJPZ-E33
SJPZ-E36
SJPZ-K28
SLA2402M
SLA2403M
SLA2501M
SLA2502M
SLA4708M
SLA5027
SLA5098
SLA8004
SMA2409M
SMA5113
SML11516C
SML1216C
SML1216W
127
127
127
127
127
127
127
128
128
128
8
10
12
14
22
16
26
28
30
32
34
60
140
140
140
140
140
140
140
140
140
140
140
140
140
129
129
129
129
129
64
68
36
38
56
120
121
99
72
122
137
137
137
5ø Round Standard Bicolor LED
5ø Round Standard Bicolor LED
5ø Round Standard Bicolor LED
3.3 x 6 Rectangular Type Bicolor LED
3.3 x 6 Bow-Shaped Type Bicolor LED
3.3 x 6 Bow-Shaped Type Bicolor LED
3.3 x 6 Rectangular Type Bicolor LED
3.3 x 6 Bow-Shaped Type Bicolor LED
3.3 x 6 Rectangular Type Bicolor LED
3.3 x 6 Bow-Shaped Type Bicolor LED
3.3 x 6 Bow-Shaped Type Bicolor LED
5ø Round Standard Bicolor LED
5ø Round Standard Bicolor LED
5ø Round Standard Bicolor LED
5ø Round Standard Bicolor LED
5ø Round Standard Bicolor LED
3.3 x 6 Bow-Shaped Type Bicolor LED
3.3 x 6 Bow-Shaped Type Bicolor LED
Power transistor Array (Surface Mount)
System Regulator IC
System Regulator IC
Low-side Power Switch IC
High-side Power Switch IC
High-side Power Switch IC
High-side Power Switch IC
Low-side Power Switch IC
Low-side Power Switch IC
High-side Power Switch IC
High-side Power Switch IC
Stepper-motor Driver IC
Full-bridge Motor Driver IC
Power transistor
Power transistor Array
Power transistor Array
Power transistor Array
Power transistor Array
Power transistor Array
Power transistor Array
Power transistor Array
MOS FET Array
MOS FET Array
Power Zener Diode (Surface Mount)
Power Zener Diode (Surface Mount)
Power Zener Diode (Surface Mount)
Power Zener Diode (Surface Mount)
3-Pin Reverce Conducting Thyrisyor for
HID Lamp Ignition
3-Pin Reverce Conducting Thyrisyor for
HID Lamp Ignition
SML1516W
SML1816W
SML19416W
SML72420C
SML72423C
SML72923C
SML78420C
SML78423C
SML79420C
SML79423C
SMLS79723C
SMLU12D16W
SMLU12E16C
SMLU12E16W
SMLU18D16C
SMLU18D16W-S
SMLU72423C-S
SMLU79423C-S
SPF0001
SPF3004
SPF3006
SPF5002A
SPF5003
SPF5004
SPF5007
SPF5009
SPF5012
SPF5017
SPF5018
SPF7211
SPF7301
SSD103
STA315A
STA335A
STA415A
STA460C
STA461C
STA463C
STA464C
STA508A
STA509A
SZ-10N27
SZ-10N40
SZ-10NN27
SZ-10NN40
TFC561D
TFC562D
137
137
137
137
137
137
137
137
137
137
137
137
137
137
137
137
137
137
100
18
20
50
40
42
44
52
54
46
48
58
62
95
101
102
103
104
105
106
107
123
124
129
129
129
129
125
126
149
Part Number Index in Alphanumeric Order
Part No. Description Page Part No. Description Page
H1-C01ED0-0607020TA
This document uses 100% recycled paper.
•http://www.sanken-ele.co.jp
ISO 9001/14001 Certified
Sanken products are manufactured and delivered to the customer based
on a strict quality and environmental control system established and
certified by the ISO 9001/14001 international certification standards.
I
Products:
Power IC, Control IC, Hall IC, Bipolar Transistor, MOS FET, IGBT, Thyristor, Rectifier Diode, LED (Light Emitting Diode), CCFL (Cold Cathode Fluorescent Lamp),
Switching Power Supply, UPS (Uninterruptible Power Supply), DC Power Supply, Inverter, Universal Airway Beacon System and Other Power Supplies and Equipments
•The information contained in this document is correct as of July 2006.
This is notification that you, as purchaser of the products/technology, are not allowed to perform any of the following:
1. Resell or retransfer these products/technology to any party intending to disturb international peace and security.
2. Use these products/technology yourself for activities disturbing international peace and security.
3. Allow any other party to use these products/technology for activities disturbing international peace and security.
Also, as purchaser of these products/technology, you agree to follow the procedures for the export or transfer of these products/technology, under the Foreign Exchange and Foreign
Trade Law, when you export or transfer the products/technology abroad.
1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo
Tel: 81-3-3986-6164 Fax: 81-3-3986-8637
SANKEN ELECTRIC CO.,LTD.
Overseas Sales Offices
●Asia
Singapore
Sanken Electric Singapore Pte. Ltd.
150 Beach Road, #14-03 The Gateway West Singapore 189720, Singapore
Tel: 65-6291-4755 Fax: 65-6297-1744
China
Sanken Electric Hong Kong Co., Ltd.
Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: 852-2735-5262 Fax: 852-2735-5494
Sanken Electric (Shanghai) Co., Ltd.
Room 3202, Maxdo Centre, Xingyi Road 8 Changning district, Shanghai, China
Tel: 86-21-5208-1177 Fax: 86-21-5208-1757
Korea
Sanken Electric Korea Co., Ltd.
Mirae Asset Life Bldg., 6F 168, Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea
Tel: 82-2-714-3700 Fax: 82-2-3272-2145
Taiwan
Taiwan Sanken Electric Co., Ltd.
Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C.
Tel: 886-2-2356-8161 Fax: 886-2-2356-8261
●North America
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Worcester, MA 01606 General Information
Tel: 1-508-853-5000 Fax: 1-508-853-3353
●Europe
Sanken Power Systems (UK) Ltd.
Abercynon, Mountain Ash, Mid Glamorgan CF45 4XA, U.K.
Tel: 44-1443-742-333 Fax: 44-1443-743-354
