MJ15022 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

  

The MJ15022 and MJ15024 are PowerBase power transistors designed for high

power audio, disk head positioners and other linear applications.

•High Safe Operating Area (100% Tested) —

2 A @ 80 V

•High DC Current Gain —

hFE = 15 (Min) @ IC = 8 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

MJ15022

ÎÎÎÎÎÎ

MJ15024

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎ

200

ÎÎÎÎÎÎ

250

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCBO

ÎÎÎÎÎÎ

350

ÎÎÎÎÎÎ

400

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEBO

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEX

ÎÎÎÎÎÎÎÎÎÎÎ

400

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak (1)

ÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

ÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

250

1.43

ÎÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎÎÎÎÎÎ

0.70

ÎÎÎÎ

C/W

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJ15022/D

 Motorola, Inc. 1995





16 AMPERE

SILICON

POWER TRANSISTORS

200 AND 250 VOLTS

250 WATTS

*Motorola Preferred Device





CASE 1–07

TO–204AA

(TO–3)

REV 7

 

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 100 mAdc, IB = 0) MJ15022

MJ15024

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

200

250

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 200 Vdc, VBE(off) = 1.5 Vdc) MJ15022

(VCE = 250 Vdc, VBE(off) = 1.5 Vdc) MJ15024

ÎÎÎÎ

ICEX

ÎÎÎÎ

—

ÎÎÎÎ

250

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 150 Vdc, IB = 0) MJ15022

(VCE = 200 vdc, IB = 0) MJ15024

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

500

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VCE = 5 Vdc, IB = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

500

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with Base Forward Biased

(VCE = 50 Vdc, t = 0.5 s (non–repetitive))

(VCE = 80 Vdc, t = 0.5 s (non–repetitive))

ÎÎÎÎ

IS/b

ÎÎÎÎ

—

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 8 Adc, VCE = 4 Vdc)

(IC = 16 Adc, VCE = 4 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)

(IC = 16 Adc, IB = 3.2 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.4

4.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 8 Adc, VCE = 4 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

2.2

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product

(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

500

ÎÎÎ

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle

2%.

100

Figure 1. Active–Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.1 0.2 0.5 10 1 k

20 TC = 25

50 250

0.1

IC, COLLECTOR CURRENT (AMPS)

0.2

1.0

5.0

500100

BONDING WIRE LIMITED

THERMAL LIMITATION

(SINGLE PULSE)

SECOND BREAKDOWN

LIMITED

There are two limitations on the powerhandling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 1 is based on TJ(pk) = 200

C; TC is

variable depending on conditions. At high case tempera-

tures, thermal limitations will reduce the power that can be

handled to values Ion than the limitations imposed by second

breakdown.

 

Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

fT, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

Figure 2. Capacitances Figure 3. Current–Gain — Bandwidth Product

Figure 4. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

0.1 0.3 0.5

VCE = 4 V

1.0 5.0

1.8

0.03 IB, BASE CURRENT (AMPS)

1.0 305.02.00.5

1.0

0.6

0.2

2.0 10

1.4

100.20.1

8 A

IC = 4 A

4000

0.3 VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

TJ = 25

10010

500

100

1000

3003010.5

Figure 5. “On” Voltage

5.0

1.8

0.15 IC, COLLECTOR CURRENT (AMPS) 10

V, VOLTAGE (VOLTS)

TJ = 25

205.0

1.0

0.8

0.2

1.4

2.01.0

VCE(sat) @ IC/IB = 10

0.5

VBE(on) @ VCE = 4 V

Figure 6. Collector Saturation Region

IC, COLLECTOR CURRENT (AMPS)

200

hFE, DC CURRENT GAIN

100

1.0

5.0

Cob

TJ = 25

TJ = 100

TJ = 25

VCE = 10 V

fTest = 1 MHz

100

TJ = 25

16 A

3000

0.2 10 205.02.01.00.5

Cib

100

TYPICAL CHARACTERISTICS

 

4 Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B––– 1.050 ––– 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N––– 0.830 ––– 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

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MJ15022/D

*MJ15022/D*

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