DS30268 Rev. 5 - 2 1 of 4 MMBT2222AT
www.diodes.com ã Diodes Incorporated
MMBT2222AT
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·Epitaxial Planar Die Construction
·Complementary PNP Type Available (MMBT2907AT)
·Ultra-Small Surface Mount Package
·Available in Lead Free/RoHS Compliant Version (Note 2)
Characteristic Symbol MMBT2222AT Unit
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current - Continuous IC600 mA
Power Dissipation (Note 1) Pd150 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 833 °C/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Features
Maximum Ratings @ TA= 25°C unless otherwise specified
A
M
JL
D
BC
H
K
G
TOP VIEW
C
E
B
N
Mechanical Data
·Case: SOT-523
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminals: Solderable per MIL-STD-202, Method 208
·Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
·Terminal Connections: See Diagram
·Marking (See Page 2): 1P
·Ordering & Date Code Information, See Page 2
·Weight: 0.002 grams (approx.)
SOT-523
Dim Min Max Typ
A0.15 0.30 0.22
B0.75 0.85 0.80
C1.45 1.75 1.60
D¾¾0.50
G0.90 1.10 1.00
H1.50 1.70 1.60
J0.00 0.10 0.05
K0.60 0.80 0.75
L0.10 0.30 0.22
M0.10 0.20 0.12
N0.45 0.65 0.50
a0°8°¾
All Dimensions in mm
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead
E
B
C
SPICE MODEL: MMBT2222AT
DS30268 Rev. 5 - 2 2 of 4 MMBT2222AT
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage V(BR)CBO 75 ¾VIC= 10mA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾VIC= 10mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾VIE = 10mA, IC = 0
Collector Cutoff Current ICEX ¾10 nA VCE = 60V, VEB(OFF) = 3.0V
Base Cutoff Current IBL ¾20 nA VCE = 60V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 3)
DC Current Gain hFE
35
50
75
100
40
¾
¾
¾
¾
¾
¾
IC = 100mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
Collector-Emitter Saturation Voltage VCE(SAT) ¾0.3
1.0 VIC= 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage VBE(SAT) 0.6
¾
1.2
2.0 VIC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ¾8pF
VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance Cibo —30pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product fT300 ¾MHz VCE = 20V, IC = 20mA,
f = 100MHz
Input Impedance hie 0.25 1.25 kWVCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz
Voltage Feedback Ratio hre ¾4.0 X 10-4 VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz
Small-Signal Current Gain hfe 75 375 ¾VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz
Output Admittance hoe 25 200 mSVCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz
Noise Figure NF ¾4.0 dB VCE = 10 Vdc, IC = 100 mAdc,
RS = 1.0 k ohms, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time td¾10 ns VCC = 30V, IC = 150mA,
VBE(off) = - 0.5V, IB1 = 15mA
Rise Time tr¾25 ns
Storage Time ts¾225 ns VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Fall Time tf¾60 ns
Notes: 3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT2222AT-7-F.
Device Packaging Shipping
MMBT2222AT-7 SOT-523 3000/Tape & Reel
(Note 4)
Ordering Information
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Date Code Key
1P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
1PYM
Marking Information
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPR
ST U VW
DS30268 Rev. 5 - 2 3 of 4 MMBT2222AT
www.diodes.com
1
10
1000
100
0.1 110 1000
100
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Fig. 2 Typical DC Current Gain vs
Collector Current
T = -25°C
A
T = +25°C
A
T = 125°C
A
V = 1.0V
CE
0
100
150
50
200
2
5
0
0100200
P , POWER DISSIPATION (mW)
d
T , AMBIENT TEMPERATURE (°C)
A
Fi
g
. 1, Power Deratin
g
Curve
(see Note 1)
0.001 0.01 110
0.1 100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2
.
0
I , BASE CURRENT (mA)
B
Fi
g
.4 T
y
pical Collector Saturation Re
g
ion
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
I= 1mA
CI= 10mA
C
I= 30mA
C
I= 100mA
C
I = 300mA
C
1.0
5.0
20
10
30
0.1 101.0 50
CAPACITANCE (pF)
REVERSE VOLTS (V)
Fi
g
.3 T
y
pical Capacitance
Cobo
Cibo
110 100 1000
V , COLLECTOR TO EMITTER
CE(SAT)
SATURATION VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Collector Emitter Saturation Voltage
vs. Collector Current
T=25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0
.5
IC
IB
=10
1
0.1 10 100
V , BASE EMITTER VOLTAGE (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 6 Base Emitter Volta
g
e vs. Collector Current
0.2
0.3
0.4
0.6
0.5
0.8
0.7
1
.
0
0.9 V= 5V
CE
T= 25°C
A
T= -50°C
A
T = 150°C
A
DS30268 Rev. 5 - 2 4 of 4 MMBT2222AT
www.diodes.com
1
10
100
1000
1 10 100
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 7 Gain Bandwidth Product vs. Collector Current
f , GAIN BANDWIDTH PRODUCT (MHz)
T
V= 5V
CE
