NGB8202ANT4G - LITTELFUSE

Speciﬁcations are subject to change without notice.

Revised: 02/15/18

Ignition IGBT

Surface Mount > 400V > NGB8202AN

• Ideal for Coil−on−Plug and Driver−on−Coil Applications

• Gate−Emitter ESD Protection

• Temperature Compensated Gate−Collector Voltage

Clamp Limits Stress Applied to Load

• Integrated ESD Diode Protection

• Low Threshold Voltage for Interfacing Power Loads to

Logic or Microprocessor Devices

• Low Saturation Voltage

• High Pulsed Current Capability

• These are Pb−Free Devices

Applications

• Ignition Systems

Features

This Logic Level Insulated Gate Bipolar Transistor (IGBT)

features monolithic circuitry integrating ESD and Over−

Voltage clamped protection for use in inductive coil

drivers applications. Primary uses include Ignition, Direct

Fuel Injection, or wherever high voltage and high current

switching is required.

Description

Rating Symbol Value Unit

Collector−Emitter Voltage VCES 440 V

Collector−Gate Voltage VCER 440 V

Gate−Emitter Voltage VGE ±15 V

Collector Current−Continuous

@ TC = 25°C − Pulsed IC

ADC

AAC

Continuous Gate Current IG1. 0 mA

Transient Gate Current

(t ≤ 2 ms, f ≤ 100 Hz) IG20 mA

ESD (Charged−Device Model) ESD 2.0 kV

ESD (Human Body Model)

R = 1500 Ω, C = 100 pF ESD 8.0 kV

ESD (Machine Model)

R = 0 Ω, C = 200 pF ESD 500 V

Total Power Dissipation @ TC = 25°C

Derate above 25°C PD

150

1. 0

Watts

W/°C

Operating and Storage

Temperature Range TJ, Tstg

−55 to

+175 °C

Maximum Ratings (TJ = 25°C unless otherwise noted)

NGB8202AN - 20 A, 400 V, N-Channel Ignition IGBT, D2PAK

Functional Diagram

Stresses exceeding those listed in the Maximum Ratings table may damage the device.

If any of these limits are exceeded, device functionality should not be assumed, damage

may occur and reliability may be affected.

Additional Information

Samples

Resources

Datasheet

20 Amps, 400 Volts

VCE (on) ≤ 1.3 V @

IC = 10 A, VGE ≥ 4.5 V

Speciﬁcations are subject to change without notice.

Revised: 02/15/18

Ignition IGBT

Surface Mount > 400V > NGB8202AN

Unclamped Collector−To−Emitter Avalanche Characteristics (−55° ≤ TJ ≤ 175°C)

Thermal Characteristics

Symbol Value Unit

Thermal Resistance, Junction to Case RθJC 1. 0 °C/W

Thermal Resistance, Junction to Ambient (Note 1) RθJA 62.5 °C/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case

for 5 seconds TL275 °C

Symbol Value Unit

Single Pulse Collector−to−Emitter Avalanche Energy

VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 Ω, L = 1.8 mH, Starting TJ = 25°C

EAS

250

mJVCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 Ω, L = 1.8 mH, Starting TJ = 150°C 200

VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 Ω, L = 1.8 mH, Starting TJ = 175°C 180

Reverse Avalanche Energy

VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C EAS(R) 2000 mJ

1. When surface mounted to an FR4 board using the minimum recommended pad size.

Speciﬁcations are subject to change without notice.

Revised: 02/15/18

Ignition IGBT

Surface Mount > 400V > NGB8202AN

Electrical Characteristics - OFF

Characteristic Symbol Test

Conditions Temperature Min Typ Max Unit

Collector−Emitter

Clamp Voltage BVCES

IC = 2.0 mA TJ = −40°C

to 175°C 370 395 420

IC = 10 mA TJ = −40°C

to 175°C 390 415 440

Zero Gate Voltage

Collector Current ICES

VGE = 0 V,

VCE = 15 V

TJ = 25°C _ 0.1 1. 0

µA

VCE = 200V

VGE = 0 V

TJ = 25°C0.5 1. 5 10

TJ = 175°C1. 0 25 100*

TJ = -40°C0.4 0.8 5.0

Reverse Collector−Emitter

Clamp Voltage BVCES(R) IC = −75 mA

TJ = 25°C30 35 39

VTJ = 175°C35 39 45*

TJ = -40°C30 33 37

Reverse Collector−Emitter

Leakage Current ICES(R) VCE = −24 V

TJ = 25°C0.05 0.2 1. 0

mATJ = 175°C1. 0 8.5 25

TJ = −40°C0.005 0.025 0.2

Gate−Emitter Clamp Voltage BVGES IG = ±5.0 mA TJ = −40°C

to 175°C 12 12.5 14 V

Gate−Emitter Leakage Current IGES VGE = ±5.0 V TJ = −40°C

to 175°C 200 300 350* µA

Gate Resistor RG_TJ = −40°C

to 175°C -70 - Ω

Gate Emitter Resistor RGE _TJ = −40°C

to 175°C 14.25 16 25 kΩ

Electrical Characteristics - ON (Note 3)

Characteristic Symbol Test

Conditions Temperature Min Typ Max Unit

Gate Threshold Voltage VGE(th) IC = 1.0 mA,

VGE = VCE

TJ = 25°C1. 5 1. 8 2.1

TJ = 175°C0.7 1. 0 1. 3

TJ = −40°C1. 7 2.0 2.3*

Threshold Temperature

Coefﬁcient (Negative) − − − 4.0 4.6 5.2 mV/°C

*Maximum Value of Characteristic across Temperature Range.

3. Pulse Test: Pulse Width ≤ 300 µS, Duty Cycle ≤ 2%.

Speciﬁcations are subject to change without notice.

Revised: 02/15/18

Ignition IGBT

Surface Mount > 400V > NGB8202AN

Electrical Characteristics - ON (Note 4)

Characteristic Symbol Test

Conditions Temperature Min Typ Max Unit

Collector−to−Emitter

On−Voltage VCE (on)

IC = 6.5 A,

VGE = 3.7 V

TJ = 25°C0.85 1.03 1.35

TJ = 175°C0.7 0.9 1. 15

TJ = −40°C 0 1. 11 1. 4

IC = 9.0 A,

VGE = 3.9 V

TJ = 25°C0.9 1. 11 1.45

TJ = 175°C0.8 1. 01 1.25

TJ = −40°C1. 0 1. 18 1. 5

IC = 7.5 A,

VGE = 4.5 V

TJ = 25°C0.85 1. 15 1. 4

TJ = 175°C0.7 0.95 1. 2

TJ = −40°C1. 0 1. 3 1.6*

IC = 10 A,

VGE = 4.5 V

TJ = 25°C1. 0 1. 3 1. 6

TJ = 175°C0.8 1.05 1. 4

TJ = −40°C1. 1 1. 4 1.7*

IC = 15 A,

VGE = 4.5 V

TJ = 25°C1. 15 1.45 1. 7

TJ = 175°C1. 0 1. 3 1.55

TJ = −40°C1.25 1.55 1.8*

IC = 20 A,

VGE = 4.5 V

TJ = 25°C1. 1 1. 4 1. 9

TJ = 175°C1. 2 1. 5 1. 8

TJ = −40°C1. 3 1.42 2.0

Forward Transconductance gfs VCE = 5.0 V,

IC = 6.0 A TJ = 25°C10 18 25 Mhos

Speciﬁcations are subject to change without notice.

Revised: 02/15/18

Ignition IGBT

Surface Mount > 400V > NGB8202AN

Dynamic Characteristics

Switching Characteristics

Characteristic Symbol Test

Conditions Temperature Min Ty p Max Unit

Input Capacitance CISS

VCE = 25 V

f = 10 kHZ TJ = 25°C

110 0 1300 1500

Output Capacitance COSS 70 80 90

Transfer Capacitance CRSS 18 20 22

Characteristic Symbol Test Conditions Temperature Min Ty p Max Unit

Turn−Off Delay Time

(Resistive) td (off) VCC = 300 V,

IC = 9 A

RG = 1.0 kΩ,

RL = 33 Ω,

VGE = 5.0 V

TJ = 25°C6.0 8.0 10

µSec

TJ = 175°C6.0 8.0 10

Fall Time

(Resistive) tf

TJ = 25°C4.0 6.0 8.0

TJ = 175°C8.0 10.5 14

Turn−Off Delay Time

(Inductive) td (off) VCC = 300 V,

IC = 9 A

RG = 1.0 kΩ,

L = 300 µH,

VGE = 5.0 V

TJ = 25°C3.0 5.0 7. 0

TJ = 175°C5.0 7. 0 9.0

Fall Time

(Inductive) tf

TJ = 25°C1. 5 3.0 4.5

TJ = 175°C5.0 7. 0 10

Turn−On Delay Time td (on) VCC = 14 V,

IC = 9.0 A

RG = 1.0 kΩ,

RL = 1.5 Ω,

VGE = 5.0 V

TJ = 25°C1. 0 1. 5 2.0

TJ = 175°C1. 0 1. 5 2.0

Rise Time tr

TJ = 25°C4.0 6.0 8.0

TJ = 175°C3.0 5.0 7. 0

4. Pulse Test: Pulse Width ≤ 300 µS, Duty Cycle ≤ 2%.

*Maximum Value of Characteristic across Temperature Range.

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not

be indicated by the Electrical Characteristics if operated under different conditions.

Speciﬁcations are subject to change without notice.

Revised: 02/15/18

Ignition IGBT

Surface Mount > 400V > NGB8202AN

Figure 1. Self Clamped Inductive Switching

Ratings and Characteristic Curves

Figure 2. Open Secondary Avalanche Current vs. Temperature

Figure 3. Collector−to−Emitter Voltage vs. Junction Temperature

Figure 5. Collector Current vs. Collector−to−Emitter Voltage

Figure 4. Collector Current vs. Collector−to−Emitter Voltage

Figure 6. Collector Current vs. Collector−to−Emitter Voltage

Speciﬁcations are subject to change without notice.

Revised: 02/15/18

Ignition IGBT

Surface Mount > 400V > NGB8202AN

Figure 7. Transfer Characteristics Figure 8. Collector−to−Emitter Leakage Current vs. Temperature

Figure 9. Gate Threshold Voltage vs. Temperature Figure 10. Capacitance vs. Collector−to−Emitter Voltage

Figure 11. Resistive Switching Fall Time vs.Temperature Figure 12. Inductive Switching Fall Time vs.Temperature

10000

1000

100

0.1

TJ, JUNCTION TEMPERATURE (°C)

COLLECTOR TO EMITTER LEAKAGE

CURRENT ( A)

05 025 125 17575 100 150

VCE = 200 V

1.0

VCE

TJ, JUNCTION TEMPERATURE (°C)

SWITCHING TIME ( s)

75 57100105 150

tfall

VCC = 300 V

VGE = 5.0 V

RG = 1000

IC = 9.0 A

RL = 33

25 125

tdelay

TJ, JUNCTION TEMPERATURE (°C)

SWITCHING TIME ( s)

75 57100105 150

tfall

VCC = 300 V

VGE = 5.0 V

RG = 1000

IC = 9.0 A

25 125

tdelay

L = 300µH

Speciﬁcations are subject to change without notice.

Revised: 02/15/18

Ignition IGBT

Surface Mount > 400V > NGB8202AN

Figure 13. Minimum Pad Transient Thermal Resistance (Non−normalized Junction−to−Ambient)

Figure 14. Best Case Transient Thermal Resistance (Non−normalized Junction−to−Case Mounted on Cold Plate)

0.000001 0.0010.0001 0.1

100

0.01

t,TIME (S)

R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)

11 0 1001 000

0.1

0.00001

0.2

Single Pulse

0.1

0.05

0.02

0.01

Duty Cycle = 0.5

P(pk)

DUTY CYCLE, D = t1/t2

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) A = P(pk) R JA(t)

For D=1: R JC R(t) for t 0.1 s

0.000001 0.0010.0001 0.1

0.01

t,TIME (S)

RJC(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)

0.1

Figure 14. Best Case Transient Thermal Resistance

0.00001

0.2

Single Pulse

0.1

0.05

0.02

0.01

Duty Cycle = 0.5

P(pk)

DUTY CYCLE, D = t1/t2

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) A = P(pk) R JC(t)

≤

Speciﬁcations are subject to change without notice.

Revised: 02/15/18

Ignition IGBT

Surface Mount > 400V > NGB8202AN

Dimensions

Part Marking System

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04.

Dim Inches Millimeters

Min Max Min Max

A0.340 0.380 8.64 9.65

B0.380 0.405 9.65 10.29

C0.160 0.190 4.06 4.83

D0.020 0.035 0.51 0.89

E0.045 0.055 1. 14 1.40

F0.310 0.350 7.8 7 8.89

G0.100 BSC 2.54 BSC

H0.080 0 .110 2.03 2.79

J0.018 0.025 0.46 0.64

K0.090 0.110 2.29 2.79

L0.052 0.072 1.32 1.83

M0.280 0.320 7. 11 8.13

N0.197 REF 5.00 REF

P0.079 REF 2.00 REF

R0.039 REF 0.99 REF

S0.575 0.625 14.60 15.88

V0.045 0.055 1. 14 1.40

Soldering Footrpint

ORDERING INFORMATION

Device Package Shipping

NGB8202ANT4G

D2PAK

(Pb-Free)

800 /

Tape & Reel

NGB8202ANTF4G 700 /

Tape & Reel

8202xxG

AYWW

Gate

Emitter

Collector

GB8202xx = Device Code

A= Assembly Location

Y= Year

WW = Work Week

8.38

5.080

DIMENSIONS: MILLIMETERS

PITCH

16.155

1.016

10.49

3.504

xx = AN

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reliable. However, users should independently evaluate the suitability of and

test each product selected for their own applications. Littelfuse products are

not designed for, and may not be used in, all applications. Read complete

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