BLF369 - Philips Semiconductors / NXP Semiconductors

1. Product proﬁle

1.1 General description

A 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial

applications in the HF/VHF band.

[1] Th is the heatsink temperature.

1.2 Features

nTypical CW performance at 225 MHz, a drain-source voltage VDS of 32 V and a

quiescent drain current IDq = 2 ×1.0 A:

uLoad power PL = 500 W

uGain Gp≥18 dB

uDrain efﬁciency ηD=60%

nAdvanced ﬂange material for optimum thermal behavior and reliability

nExcellent ruggedness

nHigh power gain

nDesigned for broadband operation (HF/VHF band)

nSource on underside eliminates DC isolators, reducing common-mode inductance

nEasy power control

1.3 Applications

nCommunication transmitter applications in the UHF band

nIndustrial applications in the UHF band

BLF369

VHF power LDMOS transistor

Rev. 01 — 13 April 2006 Objective data sheet

Table 1: Typical performance

Typical RF performance at V

= 32 V and T

=25

C in a common-source 225 MHz test circuit.

[1]

Mode of operation f PLPL(PEP) GpηDIMD3

(MHz) (W) (W) (dB) (%) (dBc)

CW, class AB 225 500 - 18 60 -

2-tone, class AB f1 = 225; f2= 225.1 - 500 19 47 −28

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Objective data sheet Rev. 01 — 13 April 2006 2 of 14

Philips Semiconductors BLF369

VHF power LDMOS transistor

2. Pinning information

[1] Connected to ﬂange.

3. Ordering information

4. Limiting values

5. Thermal characteristics

[1] Tj is the junction temperature.

[2] Rth(j-c) and Rth(j-h) are measured under RF conditions

[3] Rth(j-h) is dependent on the applied thermal compound and clamping/mounting of the device.

Table 2. Pinning

Pin Description Simpliﬁed outline Symbol

1 gate1

2 gate2

3 drain1

4 drain2

5 source [1]

43 4

sym117

Table 3: Ordering information

Type number Package

Name Description Version

BLF369 - ﬂanged LDMOST ceramic package; 2 mounting holes; 4

leads SOT800-2

Table 4: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 65 V

VGS gate-source voltage - ±13 V

Tstg storage temperature −65 +150 °C

Tjjunction temperature - 200 °C

Table 5: Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-c) thermal resistance from junction to case Tj= 200 °C[1][2] 0.26 K/W

Rth(j-h) thermal resistance from junction to heatsink Tj= 200 °C[1][2][3] 0.35 K/W

Objective data sheet Rev. 01 — 13 April 2006 3 of 14

Philips Semiconductors BLF369

VHF power LDMOS transistor

6. Characteristics

[1] ID is the drain current.

[2] Ciss and Coss include reverse transfer capacitance (Crss).

7. Application information

Table 6: Characteristics

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions[1] Min Typ Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; I

D=6mA 65 - - V

VGSth gate-source threshold voltage VDS = 20 V; ID= 600 mA 4 - 5.5 V

IDSS drain leakage current VGS =0V; V

DS =32V - - 4.2 µA

IDSX drain cut-off current VGS =V

GSth + 9 V; VDS =10V - 100 - A

IGSS gate leakage current VGS =20V; V

DS =0V - - 60 nA

gfs forward transconductance VGS =20V; I

D=13A - 15 - S

RDSon drain-source on-state resistance VGS =V

GSth + 9 V; ID=13A - 40 - mΩ

Ciss input capacitance VGS = 0 V; VDS =32V; f=1MHz [2] - 400 - pF

Coss output capacitance VGS = 0 V; VDS =32V; f=1MHz [2] - 230 - pF

Crss reverse transfer capacitance VGS = 0 V; VDS = 32 V; f = 1 MHz - 15 - pF

VGS = 0 V; f = 1 MHz.

Fig 1. Output capacitance Coss as a function of drain-source voltage VDS; typical values

per section

VDS (V)

0504020 3010

001aae484

200

400

600

Coss

(pF)

Table 7: RF performance in a common-source 225 MHz test circuit

=25

C unless otherwise speciﬁed.

Mode of operation f VDS IDq PL(PEP) GpηDIMD3 ∆Gp

(MHz) (V) (A) (W) (dB) (%) (dBc) (dB)

2-tone, class AB f1= 225; f2= 225.1 32 2 × 1.0 300 > 18 > 43 <−24 1

Objective data sheet Rev. 01 — 13 April 2006 4 of 14

Philips Semiconductors BLF369

VHF power LDMOS transistor

7.1 Ruggedness in class-AB operation

The BLF369 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1

through all phases under the following conditions: VDS = 32 V; f = 225 MHz at rated load

power (PL(PEP) = 500 W).

VDS = 32 V; f = 225 MHz; IDq = 2 × 1.0 A; Th = 25 °C.

Fig 2. CW power gain Gp and drain efﬁciency ηD as a function of output power PL; typical values

VDS = 32 V; f1 = 225 MHz; f2 = 225.1 MHz;

IDq =2×1.0 A; Th = 25 °C. VDS = 32 V; f1 = 225 MHz; f2 = 225.1 MHz;

IDq =2×1.0 A; Th = 25 °C.

Fig 3. 2-tone power gain Gpand drain efﬁciency ηDas

a function of peak envelope power PL(PEP);

typical values

Fig 4. 2-tone third order intermodulation distortion

IMD3 as a function of peak envelope power

PL(PEP); typical values

PL (W)

0 500400200 300100

001aae501

(dB)

ηD

(%)

ηD

PL(PEP) (W)

0 600400200

001aae502

(dB)

ηD

(%)

ηD

PL(PEP) (W)

0 600400200

001aae503

−40

−20

IMD3

(dBc)

−60

Objective data sheet Rev. 01 — 13 April 2006 5 of 14

Philips Semiconductors BLF369

VHF power LDMOS transistor

7.2 Reliability

8. Test information

TTF; 0.1 % failure fraction; best estimate values.

(1) Tj = 100 °C

(2) Tj = 110 °C

(3) Tj = 120 °C

(4) Tj = 130 °C

(5) Tj = 140 °C

(6) Tj = 150 °C

(7) Tj = 160 °C

(8) Tj = 170 °C

(9) Tj = 180 °C

(10) Tj = 190 °C

(11) Tj = 200 °C

Fig 5. BLF369 electromigration (ID, total device)

001aae504

Idc (A)

0 302412 186

103

102

105

104

106

Years

(11)(10)(9)(8)(7)

(6)(5)(4)(3)(2)(1)

Table 8: List of components

For test circuit, see Figure 6,7 and 8.

Component Description Value Remarks

B1 semi rigid coax 25 Ω; 120 mm EZ90-25-TP

B2 semi rigid coax 25 Ω; 56 mm EZ90-25-TP

C1 multilayer ceramic chip capacitor 91 pF [1]

C2, C3 multilayer ceramic chip capacitor 56 pF [1]

C4, C7 multilayer ceramic chip capacitor 100 pF [1]

C5, C8 ceramic capacitor 15 nF

C6, C9 electrolytic capacitor 220 µF

C10, C11, C13,

C14 multilayer ceramic chip capacitor 220 pF [1]

C12, C15 ceramic capacitor 15 nF [1]

Objective data sheet Rev. 01 — 13 April 2006 6 of 14

Philips Semiconductors BLF369

VHF power LDMOS transistor

[1] American technical ceramics type 100B or capacitor of same quality.

[2] PCB: Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 µm.

C20 multilayer ceramic chip capacitor 100 pF [1]

C21 multilayer ceramic chip capacitor 20 pF [1]

C22, C25 multilayer ceramic chip capacitor 100 pF [1]

C23, C26 ceramic capacitor 15 nF

C24, C27 electrolytic capacitor 10 µF

C28, C31 multilayer ceramic chip capacitor 100 pF [1]

C29, C32 multilayer ceramic chip capacitor 220 pF

C30, C33 ceramic capacitor 15 nF

L1, L3 stripline [2] (W × L) 12 mm × 15 mm

L2, L4 air coil 4 windings; D = 8 mm; d = 1 mm

L5, L6 stripline [2] (W × L) 14 mm × 15 mm

R1, R2, R3, R4 resistor 0.25 W; 4 Ω

R5, R6, R8, R9 resistor 0.25 W; 10 Ω

R7, R10 potentiometer 10 kΩ

R11, R12 resistor 0.25 W; 1 Ω

T1, T2 semi rigid coax 25 Ω; 68 mm EZ90-25-TP

T3, T4 semi rigid coax 25 Ω; 60 mm EZ90-25-TP

Table 8: List of components

…continued

For test circuit, see Figure 6,7 and 8.

Component Description Value Remarks

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Objective data sheet Rev. 01 — 13 April 2006 7 of 14

Philips Semiconductors BLF369

VHF power LDMOS transistor

Fig 6. Class-AB common-source 225 MHz test circuit; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages

001aae535

50 Ω

C32

+ VD2(test)

+ VG2(test)

R9R8

R10

C27

C26

C25

+ VG1(test)

R6R5

C24

C22

C23

+ VD1(test)

L1L5

L6 L3

C1 C3

C20

C21

C12

C10 C11 R2R1

C15

C13 C14 R4R3

C31

B2 B1

C28

C29R11

R12

C30

C33

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Objective data sheet Rev. 01 — 13 April 2006 8 of 14

Philips Semiconductors BLF369

VHF power LDMOS transistor

Fig 7. Printed-circuit board for class-AB 225 MHz test circuit

001aae536

95 mm

80 mm

95 mm

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Objective data sheet Rev. 01 — 13 April 2006 9 of 14

Philips Semiconductors BLF369

VHF power LDMOS transistor

C1 mounted on top of transformers T1 and T2; C20 mounted on top of transformers T3 and T4

Fig 8. Component layout for class-AB 225 MHz test circuit

001aae537

C24

C30

C29

C32

C31

C28

R11

R12

C33

+ VG1(test) + VD1(test)

+ VD2(test)

+ VG2(test)

C20 C21

R8 R9

C25

C26

R10C27

C23 C22

C4 C5

L2 R1 C12

C10

C11 C2

C14

C15

C13

L4 R3 R4

R6R5

BLF 369

Objective data sheet Rev. 01 — 13 April 2006 10 of 14

Philips Semiconductors BLF369

VHF power LDMOS transistor

9. Package outline

Fig 9. Package outline SOT800-2

SOT800-2

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT800-2 05-06-02

05-06-07

Flanged LDMOST ceramic package; 2 mounting holes; 4 leads

0 5 10 mm

scale

mm 0.050.25 0.2538.512.7

10.55

10.45 0.15

0.10 30.5

29.9 15.3

15.1 22.8

21.8 15.4

15.0

6.3

5.9 2.26

2.00 44.5

44.2

3.56

3.49 3.1

2.8

14.6

14.4

31.1

30.9 3.7

3.3

inches 0.0020.01 0.011.516

UNIT A Dbc eU2yq w2

FU1

pQEE1

D1HL

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

0.5

0.415

0.411 0.006

0.004 1.201

1.177 1.224

1.216 0.602

0.594 0.898

0.858 0.606

0.591

0.248

0.232 0.089

0.079 1.752

1.740

0.140

0.137 0.122

0.110

0.575

0.567 0.146

0.130

U2P

w1 A

M M BM

w2 C

M M

Objective data sheet Rev. 01 — 13 April 2006 11 of 14

Philips Semiconductors BLF369

VHF power LDMOS transistor

10. Abbreviations

Table 9: Abbreviations

Acronym Description

CW Continuous Wave

GSM Global System for Mobile communications

LDMOS Laterally Diffused Metal Oxide Semiconductor

PCB Printed-Circuit Board

PEP Peak Envelope Power

RF Radio Frequency

TTF Time To Failure

VSWR Voltage Standing Wave Ratio

Objective data sheet Rev. 01 — 13 April 2006 12 of 14

Philips Semiconductors BLF369

VHF power LDMOS transistor

11. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF369_1 20060413 Objective data sheet - -

Objective data sheet Rev. 01 — 13 April 2006 13 of 14

Philips Semiconductors BLF369

VHF power LDMOS transistor

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.semiconductors.philips.com.

12.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. Philips Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Philips Semiconductors

sales ofﬁce. In case of any inconsistency or conﬂict with the short data sheet,

the full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, Philips Semiconductors does not give any representations

or warranties, expressed or implied, as to the accuracy or completeness of

such information and shall have no liability for the consequences of use of

such information.

Right to make changes — Philips Semiconductors reserves the right to

make changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — Philips Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of a Philips Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. Philips Semiconductors accepts no liability for inclusion and/or use

of Philips Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is for the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Philips Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and and

operation of the device at these or any other conditions above those given in

the Characteristics sections of this document is not implied. Exposure to

limiting values for extended periods may affect device reliability.

Terms and conditions of sale — Philips Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.semiconductors.philips.com/proﬁle/terms, including those

pertaining to warranty, intellectual property rights infringement and limitation

of liability, unless explicitly otherwise agreed to in writing by Philips

Semiconductors. In case of any inconsistency or conﬂict between information

in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

13. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

Philips Semiconductors BLF369

VHF power LDMOS transistor

For more information, please visit: http://www.semiconductors.philips.com.

For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com.

Date of release: 13 April 2006

Document identifier: BLF369_1

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 3

7.1 Ruggedness in class-AB operation. . . . . . . . . . 4

7.2 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13

12.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13 Contact information. . . . . . . . . . . . . . . . . . . . . 13

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14