M16C/62 Group (M16C/62P, M16C/62PT) SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER REJ03B0001-0210Z Rev.2.10 Nov. 07, 2003 1. Overview The M16C/62 group (M16C/62P, M16C/62PT) of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 80-pin, 100-pin and 128-pin plastic molded QFP. These single-chip microcomputers operate using sophisticated instructions featuring a high level of instruction efficiency. With 1M bytes of address space, they are capable of executing instructions at high speed. In addition, this microcomputer contains a multiplier and DMAC which combined with fast instruction processing capability, makes it suitable for control of various OA, communication, and industrial equipment which requires high-speed arithmetic/logic operations. 1.1 Applications Audio, cameras, office/communications/portable/industrial equipment, automobile, etc Specifications written in this manual are believed to be accurate, but are not guaranteed to be entirely free of error. Specifications in this manual may be changed for functional or performance improvements. Please make sure your manual is the latest edition. Rev.2.10 Nov. 07, 2003 page 1 of 84 1. Overview M16C/62 Group (M16C/62P, M16C/62PT) 1.2 Performance Outline Table 1.1 to table 1.3 list performance outline of M16C/62 group (M16C/62P, M16C/62PT). Table 1.1 Performance outline of M16C/62 group (M16C/62P) (128-pin version) Item CPU Performance M16C/62P Number of basic instructions Shortest instruction execution time Operation mode Memory space Peripheral function Memory capacity Port Multifunction timer Serial I/O A-D converter D-A converter DMAC CRC calculation circuit Watchdog timer Interrupt Clock generating circuit Oscillation stop detection function Electric characteristics Flash memory Version Voltage detection circuit Supply voltage Power consumption Program/erase supply voltage Program and erase endurance Operating ambient temperature Package 91 instructions 41.7ns(f(BCLK)=24MHz, VCC1=3.0 to 5.5V) 100ns(f(BCLK)=10MHz, VCC1=2.7 to 5.5V) Single-chip, memory expansion and microprocessor mode 1 Mbyte (Available to 4M bytes by memory space expansion function) See table 1.4 and 1.5 Product List Input/Output : 113 pins, Input : 1 pin Timer A : 16 bits x 5 channels, Timer B : 16 bits x 6 channels Three phase motor control circuit 3 channels Clock synchronous, UART, I2C bus (1), IEBus (2) 2 channels Clock synchronous 10-bit A-D converter: 1 circuit, 26 channels 8 bits x 2 channels 2 channels CCITT-CRC 15 bits x 1 channel (with prescaler) Internal: 29 sources, External: 8 sources, Software: 4 sources, Priority level: 7 levels 4 circuits Main clock generation circuit (*), Subclock generation circuit (*), Ring oscillator, PLL synthesizer (*)Equipped with a built-in feedback resistor. Stop detection of main clock oscillation, re-oscillation detection function Available (option (4)) VCC1=3.0 to 5.5V, VCC2=2.7V to VCC1 (f(BCLK)=24MHz) VCC1=2.7 to 5.5V, VCC2=2.7V to VCC1 (f(BCLK)=10MHz) 14 mA (VCC1=VCC2=5V, f(BCLK)=24MHz) 8 mA (VCC1=VCC2=3V, f(BCLK)=10MHz) 1.8 A (VCC1=VCC2=3V, f(XCIN)=32kHz, wait mode) 0.7 A (VCC1=VCC2=3V, stop mode) 3.3 0.3 V or 5.0 0.5 V 100 times (all area) or 1,000 times (user ROM area without block 1) / 10,000 times (block A, block 1) (3) -20 to 85oC -40 to 85oC (3) 128-pin plastic mold QFP NOTES: 1. I2C bus is a registered trademark of Koninklijke Philips Electronics N. V. 2. IEBus is a registered trademark of NEC Electronics Corporation. 3. See table 1.8 Product Code for the program and erase endurance, and operating ambient temperature. In addition 1,000 times/10,000 times are under development as of Oct., 2003. Please inquire about a release schedule. 4. All options are on request basis. Rev.2.10 Nov. 07, 2003 page 2 of 84 1. Overview M16C/62 Group (M16C/62P, M16C/62PT) Table 1.2 Performance outline of M16C/62 group (M16C/62P, M16C/62PT) (100-pin version) Item Performance M16C/62P M16C/62PT(Note 4) Number of basic instructions 91 instructions Shortest instruction execution time 41.7ns(f(BCLK)=24MHz, VCC1=3.0 to 5.5V) 41.7ns(f(BCLK)=24MHz, VCC1=4.0 to 5.5V) 100ns(f(BCLK)=10MHz, VCC1=2.7 to 5.5V) Operation mode Single-chip, memory expansion and Single-chip mode microprocessor mode Memory space 1 Mbyte (Available to 4 Mbytes by 1M byte memory space expansion function) Memory capacity See table 1.4 to 1.7 Product List Port Input/Output : 87 pins, Input : 1pin Peripheral Multifunction timer Timer A : 16 bits x 5 channels, Timer B : 16 bits x 6 channels function Three phase motor control circuit Serial I/O 3 channels Clock synchronous, UART, I2C bus (1), IEBus (2) 2 channels Clock synchronous A-D converter 10-bit A-D converter: 1 circuit, 26 channels D-A converter 8 bits x 2 channels DMAC 2 channels CRC calculation circuit CCITT-CRC Watchdog timer 15 bits x 1 channel (with prescaler) Interrupt Internal: 29 sources, External: 8 sources, Software: 4 sources, Priority level: 7 levels Clock generating circuit 4 circuits Main clock generation circuit (*), Subclock generation circuit (*), Ring oscillator, PLL synthesizer (*)Equipped with a built-in feedback resistor. Oscillation stop detection function Stop detection of main clock oscillation, re-oscillation detection function Voltage detection circuit Available (option (5)) Absent VCC1=3.0 to 5.5V, VCC2=2.7V to VCC1 VCC1=VCC2=4.0V to 5.5 V Supply voltage Electric (f(BCLK)=24MHz) (f(BCLK)=24MHz) characterisVCC1=2.7 to 5.5V, VCC2=2.7V to VCC1 tics (f(BCLK)=10MHz) Power consumption 14 mA (VCC1=VCC2=5V, f(BCLK)=24MHz) 14 mA (VCC1=VCC2=5V, f(BCLK)=24MHz) 8 mA (VCC1=VCC2=3V, f(BCLK)=10MHz) 2.0 A (VCC1=VCC2=5V, 1.8 A (VCC1=VCC2=3V, f(XCIN)=32kHz, wait mode) f(XCIN)=32kHz, wait mode) 0.8 A (VCC1=VCC2=5V, stop mode) 0.7 A (VCC1=VCC2=3V, stop mode) 3.3 0.3 V or 5.0 0.5 V 5.0 0.5 V Flash memory Program/erase supply voltage Program and erase endurance 100 times (all area) Version or 1,000 times (user ROM area without block 1) / 10,000 times (block A, block 1) (3) Operating ambient temperature -20 to 85oC T version : -40 to 85oC o (3) -40 to 85 C V version : -40 to 125oC Package 100-pin plastic mold QFP, LQFP CPU NOTES: 1. I2C bus is a registered trademark of Koninklijke Philips Electronics N. V. 2. IEBus is a registered trademark of NEC Electronics Corporation. 3. See table 1.8 Product Code for the program and erase endurance, and operating ambient temperature. In addition 1,000 times/10,000 times are under development as of Oct., 2003. Please inquire about a release schedule. 4. Use the high reliability version on VCC1 = VCC2. 5. All options are on request basis. Rev.2.10 Nov. 07, 2003 page 3 of 84 1. Overview M16C/62 Group (M16C/62P, M16C/62PT) Table 1.3 Performance outline of M16C/62 group (M16C/62P, M16C/62PT) (80-pin version) Item Performance M16C/62P M16C/62PT CPU Number of basic instructions 91 instructions Shortest instruction execution time 41.7ns(f(BCLK)=24MHz, VCC1=3.0 to 5.5V) 41.7ns(f(BCLK)=24MHz, VCC1=4.0 to 5.5V) 100ns(f(BCLK)=10MHz, VCC1=2.7 to 5.5V) Operation mode Single-chip mode Memory space 1M byte Memory capacity See table 1.4 to 1.7 Product List Peripheral Port Input/Output : 70 pins, Input : 1pin function Multifunction timer Timer A : 16 bits x 5 channels (Timer A1 and A2 are internal timer) Timer B : 16 bits x 6 channels (Timer B1 is internal timer) Serial I/O 2 channels Clock synchronous, UART, I2C bus(1), IEBus(2) 1 channel Clock synchronous, I2C bus(1), IEBus(2) 2 channels Clock synchronous (1 channel is only for transmission) A-D converter 10-bit A-D converter: 1 circuit, 26 channels D-A converter 8 bits x 2 channels DMAC 2 channels CRC calculation circuit CCITT-CRC Watchdog timer 15 bits x 1 channel (with prescaler) Interrupt Internal: 29 sources, External: 5 sources, Software: 4 sources, Priority level: 7 levels Clock generating circuit 4 circuits Main clock generation circuit (*), Subclock generation circuit (*), Ring oscillator, PLL synthesizer (*)Equipped with a built-in feedback resistor. Oscillation stop detection function Stop detection of main clock oscillation, re-oscillation detection function Voltage detection circuit Available (option (4)) Absent Electric VCC1=3.0 to 5.5V, (f(BCLK)=24MHz) VCC1=4.0 to 5.5V, (f(BCLK)=24MHz) Supply voltage characterisVCC1=2.7 to 5.5V, (f(BCLK)=10MHz) tics Power consumption 14 mA (VCC1=5V, f(BCLK)=24MHz) 14 mA (VCC1=5V, f(BCLK)=24MHz) 8 mA (VCC1=3V, f(BCLK)=10MHz) 2.0 A (VCC1=5V, 1.8 A (VCC1=3V, f(XCIN)=32kHz, wait mode) f(XCIN)=32kHz, wait mode) 0.8 A (VCC1=5V, stop mode) 0.7 A (VCC1=3V, stop mode) Flash Program/erase supply voltage 3.3 0.3 V or 5.0 0.5 V 5.0 0.5 V memory Program and erase endurance 100 times (all area) Version or 1,000 times (user ROM area without block 1) / 10,000 times (block A, block 1) (3) Operating ambient temperature -20 to 85oC T version : -40 to 85oC o -40 to 85 C(option) V version : -40 to 125oC Package 80-pin plastic mold QFP NOTES : 1. I2C bus is a registered trademark of Koninklijke Philips Electronics N. V. 2. IEBus is a registered trademark of NEC Electronics Corporation. 3. See table 1.8 Product Code for the program and erase endurance, and operating ambient temperature. In addition 1,000 times/10,000 times are under development as of Oct., 2003. Please inquire about a release schedule. 4. All options are on request basis. Rev.2.10 Nov. 07, 2003 page 4 of 84 1. Overview M16C/62 Group (M16C/62P, M16C/62PT) 1.3 Block Diagram Figure 1.1 is a block diagram of the M16C/62 group (M16C/62P, M16C/62PT) 128-pin and 100-pin version, figure 1.2 is a block diagram of the M16C/62 group (M16C/62P, M16C/62PT) 80-pin version. 8 8 Port P0 8 Port P1 8 Port P3 Port P2 8 Port P4 Port P5 Timer (16-bit) Expandable up to 26 channels) Output (timer A): 5 Input (timer B): 6 UART or clock synchronous serial I/O (8 bits X 3 channels) Clock synchronous serial I/O (8 bits X 2 channels) M16C/60 series16-bit CPU core R2 R3 DMAC ISP INTB D-A converter PC FLG 8 (4) Port P14 Port P12 (3) Port P13 (3) (3) 2 8 8 (4) (3) AAAAA AAAAA AAAAA Multiplier (8 bits X 2 channels) Port P11 RAM (2) Port P10 A0 A1 FB (2 channels) ROM (1) USP 8 (15 bits) SB R0L R1L Port P9 R0H R1H Watchdog timer Memory Port P8_5 CRC arithmetic circuit (CCITT ) (Polynomial : X16+X12+X5+1) (4) XIN-XOUT XCIN-XCOUT PLL frequency synthesizer Ring oscillator 7 System clock generation circuit A-D converter (10 bits X 8 channels 8 (4) Internal peripheral functions Three-phase motor control circuit Port P6 Port P8 ports>(4) 8 Port P7 VCC2, do not use AN0_0 to AN0_7 and AN2_0 to AN2_7 as analog input pins. 3. AD operation clock frequency (oAD frequency) must be 12 MHz or less. And divide the fAD if VCC1 is less than 4.0V, and oAD frequency into 10 MHz or less. 4. A case without sample & hold function turn oAD frequency into 250 kHz or more in addition to a limit of Note 3. A case with sample & hold function turn oAD frequency into 1MHz or more in addition to a limit of Note 3. Table 5.5 D-A Conversion Characteristics (1) Symbol - - tsu RO IVREF Parameter Resolution Absolute accuracy Setup time Output resistance Reference power supply input current Measuring condition Standard Min. Typ. Max. 4 (Note 2) 10 Unit 8 1.0 3 20 Bits % s k 1.5 mA NOTES: 1. Referenced to VCC1=VREF=3.3 to 5.5V, VSS=AVSS=0V at Topr = -20 to 85 C / -40 to 85 C unless otherwise specified. 2. This applies when using one D-A converter, with the D-A register for the unused D-A converter set to "00h". The A-D converter's ladder resistance is not included. Also, when D-A register contents are not "00h", the current IVREF always flows even though Vref may have been set to be unconnected by the A-D control register. Rev.2.10 Nov. 07, 2003 page 33 of 84 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) Table 5.6 Flash Memory Version Electrical Characteristics (1) for 100 cycle products (D3, D5, U3, U5) Standard Symbol Parameter Unit Min. Typ. Max. cycle - Program and erase endurance (3) - Word program time (VCC1=5.0V, Topr=25C) 25 200 s - Lock bit program time 25 200 s - Block erase time (VCC1=5.0V, Topr=25 C) 4K bytes block 0.3 4 s 8K bytes block 0.3 4 s 32K bytes block 0.5 4 s 64K bytes block 0.8 4 s tPS - Erase all unlocked blocks time 100 (2) Flash memory circuit stabilization wait time Data hold time (5) 4Xn s 15 s 10 year Table 5.7 Flash Memory Version Electrical Characteristics (6) for 10,000 cycle products (D7, D9, U7, U7) (Block A and Block 1 (7)) Standard Symbol Parameter Min. Typ. Max. Unit - Program and erase endurance (3, 8, 9) - Word program time (VCC1=5.0V, Topr=25C) 25 s - Lock bit program time 25 s - Block erase time (VCC1=5.0V, Topr=25 C) 0.3 s tPS - 10,000 (4) 4K bytes block cycle Flash memory circuit stabilization wait time 15 10 Data hold time (5) s year NOTES : 1. Referenced to VCC1=4.5 to 5.5V, 3.0 to 3.6V at Topr = 0 to 60 C unless otherwise specified. 2. n denotes the number of block erases. 3. Program and Erase Endurance refers to the number of times a block erase can be performed. If the program and erase endurance is n (n=100, 1,000, or 10,000), each block can be erased n times. For example, if a 4K bytes block A is erased after writing 1 word data 2,048 times, each to a different address, this counts as one program and erase endurance. Data cannot be written to the same address more than once without erasing the block. (Rewrite prohibited) 4. Maximum number of E/W cycles for which operation is guaranteed. 5. Topr = -40 to 85 C (D3, D7, U3, U7) / -20 to 85 C (D5, D9, U5, U9). 6. Referenced to VCC1 = 2.7 to 5.5V at Topr = -20 to 85 C (D9, U9) / -40 to 85 C (D7, U7) unless otherwise specified. 7. Table 5.7 applies for block A or block 1 program and erase endurance > 1,000. Otherwise, use Table 5.6. 8. To reduce the number of program and erase endurance when working with systems requiring numerous rewrites, write to unused word addresses within the block instead of rewrite. Erase block only after all possible addresses are used. For example, an 8-word program can be written 256 times maximum before erase becomes necessary. Maintaining an equal number of erasure between block A and block 1 will also improve efficiency. It is important to track the total number of times erasure is used. 9. Should erase error occur during block erase, attempt to execute clear status register command, then block erase command at least three times until erase error disappears. 10. Customers desiring E/W failure rate information should contact their Renesas technical support representative. Table 5.8 Flash Memory Version Program/Erase Voltage and Read Operation Voltage Characteristics (at Topr = 0 to 60oC) Flash program, erase voltage VCC1 = 3.3 V 0.3 V or 5.0 V 0.5 V Rev.2.10 Nov. 07, 2003 page 34 of 84 Flash read operation voltage VCC1=2.7 to 5.5 V 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) Table 5.9 Low Voltage Detection Circuit Electrical Characteristics (1) Symbol Measuring condition Parameter Min. Standard Typ. Max. Unit Vdet4 Voltage down detection voltage (1) 3 .3 3 .8 4.4 V Vdet3 Reset level detection voltage (1, 2) 2 .2 2 .8 3.6 V Vdet3s Low voltage reset retention voltage Vdet3r Low voltage reset release voltage 2 .2 2 .9 4.0 V Vdet2 RAM retention limit detection voltage (1) 1.4 2 .0 2.7 V VCC1=0.8 to 5.5V (3) V 0 .8 NOTES: 1. Vdet4 > Vdet3 > Vdet2. 2. Where reset level detection voltage is less than 2.7 V, if the supply power voltage is greater than the reset level detection voltage, the operation at f(BCLK) 10MHz is guaranteed. 3. Vdet3r > Vdet3 is not guaranteed. Table 5.10 Power Supply Circuit Timing Characteristics Symbol Measuring condition Parameter td(P-R) Time for internal power supply stabilization during powering-on td(R-S) STOP release time td(W-S) Low power dissipation mode wait mode release time td(M-L) Time for internal power supply stabilization when main clock oscillation starts td(S-R) Hardware reset 2 release wait time td(E-A) Low voltage detection circuit operation start time Standard Typ. VCC1=2.7 to 5.5V VCC1=Vdet3r to 5.5V VCC1=2.7 to 5.5V Vdet3r VCC1 td(S-R) Interrupt for stop mode release CPU clock td(R-S) of 84 Max. 2 NOTES: 1. When VCC1 = 5V. Rev.2.10 Nov. 07, 2003 page 35 Min. 6 (1) Unit ms 150 s 150 s 50 s 20 ms 20 s 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 5V Table 5.11 Electrical Characteristics (1) Symbol VOH VOH HIGH output P6_0 to P6_7, P7_2 to P7_7, P8_0 to P8_4, P8_6, P8_7, voltage P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P14_0, P14_1 HIGH output voltage XOUT HIGH output voltage VOL VOL XCOUT LOW output voltage Hysteresis VT+-VT- XCOUT Max. VCC1 VCC2 IOH=-200A VCC1-0.3 VCC1 IOH=-200A (2) VCC2-0.3 VCC2 HIGHPOWER IOH=-1mA VCC1-2.0 VCC1 LOWPOWER IOH=-0.5mA VCC1-2.0 HIGHPOWER With no load applied 2 .5 LOWPOWER With no load applied 1 .6 P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P12_0 to P12_7, P13_0 to P13_7 LOW output P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_4, P8_6, P8_7, P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P14_0, P14_1 voltage P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P12_0 to P12_7, P13_0 to P13_7 XOUT Standard Typ. VCC2-2.0 LOW output P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_4, P8_6, P8_7, voltage P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P14_0, P14_1 LOW output voltage IOH=-5mA Min. VCC1-2.0 P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P12_0 to P12_7, P13_0 to P13_7 HIGH output P6_0 to P6_7, P7_2 to P7_7, P8_0 to P8_4, P8_6, P8_7, voltage P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P14_0, P14_1 P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P12_0 to P12_7, P13_0 to P13_7 VOH VOL Measuring condition Parameter Unit V IOH=-5mA (2) V VCC1 V V IOL=5mA 2.0 IOL=5mA (2) 2.0 IOL=200A 0.45 V V IOL=200A 0.45 (2) HIGHPOWER IOL=1mA 2.0 LOWPOWER IOL=0.5mA 2.0 HIGHPOWER With no load applied 0 LOWPOWER With no load applied 0 HOLD, RDY, TA0IN to TA4IN, TB0IN to TB5IN, INT0 to INT5, NMI, ADTRG, CTS0 to CTS2, SCL0 to SCL2, SDA0 TO SDA2, CLK0 to CLK4,TA0OUT to TA4OUT, KI0 to KI3, RXD0 to RXD2, SIN3, SIN4 V V 0 .2 1.0 V 0.2 2.5 V 0.2 0.8 V VT+-VT- Hysteresis VT+-VT- Hysteresis XIN HIGH input current P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_7, P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P12_0 to P12_7, P13_0 to P13_7, P14_0, P14_1, XIN, RESET, CNVSS, BYTE VI=5V 5.0 A P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_7, P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P12_0 to P12_7, P13_0 to P13_7, P14_0, P14_1, XIN, RESET, CNVSS, BYTE VI=0V -5.0 A IIH LOW input current IIL RPULLUP Pull-up resistance RESET P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P6_0 to P6_7, P7_2 to P7_7, VI=0V P8_0 to P8_4, P8_6, P8_7, P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P12_0 to P12_7, P13_0 to P13_7, P14_0, P14_1 RfXIN Feedback resistance XIN RfXCIN Feedback resistance XCIN VRAM RAM retention voltage 30 50 1.5 15 At stop mode 2 .0 NOTES: 1. Referenced to VCC1=VCC2=4.2 to 5.5V, VSS=0V at Topr = -20 to 85 C / -40 to 85 C, f(BCLK)=24MHz unless otherwise specified. 2. Where the product is used at VCC1 = 5 V and VCC2 = 3 V, refer to the 3 V version value for the pin specified value on the VCC2 port side. 3. There is no external connections for port P1_0 to P1_7, P4_4 to P4_7, P7_2 to P7_5 and P9_1 in 80-pin version. Rev.2.10 Nov. 07, 2003 page 36 of 84 170 k M M V 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 5V Table 5.12 Electrical Characteristics (2) (1) Symbol Measuring condition Parameter In single-chip mode, the output pins are open and other pins are VSS Standard Typ. Max. Unit Mask ROM f(BCLK)=24MHz, No division, PLL operation No division, Ring oscillation Flash memory f(BCLK)=24MHz, No division, PLL operation Flash memory Program f(BCLK)=10MHz, VCC1=5.0V 15 mA Flash memory Erase f(BCLK)=10MHz, VCC1=5.0V 25 mA Mask ROM f(XCIN)=32kHz, Low power dissipation mode, ROM (3) 25 A 25 A 420 A Ring oscillation, Wait mode 50 A f(BCLK)=32kHz, Wait mode (2), 7.5 A 2.0 A No division, Ring oscillation ICC Min. Power supply current (VCC1=4.0 to 5.5V) Flash memory Mask ROM Flash memory f(BCLK)=32kHz, Low power dissipation mode, RAM (3) f(BCLK)=32kHz Low power dissipation mode, Flash memory (3) 14 20 1 18 mA mA 27 1 .8 mA mA Oscillation capacity High f(BCLK)=32kHz, Wait mode (2), Oscillation capacity Low Stop mode, Topr=25C 0.8 3.0 A Idet4 Voltage down detection dissipation current 0.7 4 A Idet3 Reset area detection dissipation current (4) 1.2 8 A Idet2 RAM retention limit detection dissipation current (4) 1.1 6 A (4) NOTES: 1. Referenced to VCC1=VCC2= 4.2 to 5.5V, VSS=0V at Topr = -20 to 85 C / -40 to 85 C, f(BCLK)=24MHz unless otherwise specified. 2. With one timer operated using fC32. 3. This indicates the memory in which the program to be executed exists. 4. Idet is dissipation current when the following bit is set to "1" (detection circuit enabled). Idet4: VC27 bit of VCR2 register Idet3: VC26 bit of VCR2 register Idet2: VC25 bit of VCR2 register Rev.2.10 Nov. 07, 2003 page 37 of 84 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 5V Timing Requirements (VCC1 = VCC2 = 5V, VSS = 0V, at Topr = - 20 to 85oC / - 40 to 85oC unless otherwise specified) Table 5.13 External Clock Input (XIN input) Symbol tc tw(H) tw(L) tr tf Parameter External clock input cycle time External clock input HIGH pulse width External clock input LOW pulse width External clock rise time External clock fall time Standard Min. Max. Unit ns 62.5 25 25 15 15 ns ns ns ns Table 5.14 Memory Expansion Mode and Microprocessor Mode Symbol Parameter tac1(RD-DB) Data input access time (for setting with no wait) tac2(RD-DB) Data input access time (for setting with wait) Data input access time (when accessing multiplex bus area) Data input setup time RDY input setup time HOLD input setup time Data input hold time RDY input hold time HOLD input hold time tac3(RD-DB) tsu(DB-RD) tsu(RDY-BCLK ) tsu(HOLD-BCLK ) th(RD-DB) th(BCLK -RDY) th(BCLK-HOLD ) Standard Min. Max. (Note 1) (Note 2) (Note 3) 40 Unit ns ns ns 40 ns ns ns 0 ns 0 ns 0 ns 30 NOTES: 1. Calculated according to the BCLK frequency as follows: 0.5 X 109 f(BCLK) - 45 [ns] 2. Calculated according to the BCLK frequency as follows: (n-0.5) X 109 - 45 f(BCLK) [ns] n is "2" for 1-wait setting, "3" for 2-wait setting and "4" for 3-wait setting. 3. Calculated according to the BCLK frequency as follows: (n-0.5) X 109 - 45 f(BCLK) [ns] Rev.2.10 Nov. 07, 2003 page 38 of 84 n is "2" for 2-wait setting, "3" for 3-wait setting. 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 5V Timing Requirements (VCC1 = VCC2 = 5V, VSS = 0V, at Topr = - 20 to 85oC / - 40 to 85oC unless otherwise specified) Table 5.15 Timer A Input (Counter Input in Event Counter Mode) Symbol Parameter tc(TA) TAiIN input cycle time tw(TAH) TAiIN input HIGH pulse width tw(TAL) TAiIN input LOW pulse width Standard Min. Max. 100 40 40 Unit ns ns ns Table 5.16 Timer A Input (Gating Input in Timer Mode) Symbol Parameter tc(TA) TAiIN input cycle time tw(TAH) tw(TAL) TAiIN input HIGH pulse width TAiIN input LOW pulse width Standard Min. Max. 400 200 200 Unit ns ns ns Table 5.17 Timer A Input (External Trigger Input in One-shot Timer Mode) Symbol tc(TA) tw(TAH) tw(TAL) Parameter Standard Max. Min. Unit TAiIN input cycle time 200 ns TAiIN input HIGH pulse width TAiIN input LOW pulse width 100 100 ns ns Table 5.18 Timer A Input (External Trigger Input in Pulse Width Modulation Mode) Symbol tw(TAH) tw(TAL) Parameter TAiIN input HIGH pulse width TAiIN input LOW pulse width Standard Max. Min. 100 100 Unit ns ns Table 5.19 Timer A Input (Counter Increment/decrement Input in Event Counter Mode) Symbol Parameter tc(UP) TAiOUT input cycle time tw(UPH) TAiOUT input HIGH pulse width tw(UPL) TAiOUT input LOW pulse width tsu(UP-TIN) TAiOUT input setup time TAiOUT input hold time th(TIN-UP) Standard Min. Max. 2000 1000 Unit ns 1000 400 ns ns ns 400 ns Table 5.20 Timer A Input (Two-phase Pulse Input in Event Counter Mode) Symbol Parameter tc(TA) TAiIN input cycle time tsu(TAIN-TAOUT) TAiOUT input setup time tsu(TAOUT-TAIN) TAiIN input setup time Rev.2.10 Nov. 07, 2003 page 39 of 84 Standard Max. Min. 800 200 200 Unit ns ns ns 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 5V Timing Requirements (VCC1 = VCC2 = 5V, VSS = 0V, at Topr = - 20 to 85oC / - 40 to 85oC unless otherwise specified) Table 5.21 Timer B Input (Counter Input in Event Counter Mode) Symbol Parameter Standard Min. Max. Unit tc(TB) TBiIN input cycle time (counted on one edge) 100 ns tw(TBH) TBiIN input HIGH pulse width (counted on one edge) 40 ns tw(TBL) TBiIN input LOW pulse width (counted on one edge) 40 200 ns ns tc(TB) TBiIN input cycle time (counted on both edges) tw(TBH) TBiIN input HIGH pulse width (counted on both edges) 80 ns tw(TBL) TBiIN input LOW pulse width (counted on both edges) 80 ns Table 5.22 Timer B Input (Pulse Period Measurement Mode) Symbol Parameter Standard Min. Max. Unit tc(TB) TBiIN input cycle time 400 ns tw(TBH) tw(TBL) TBiIN input HIGH pulse width TBiIN input LOW pulse width 200 200 ns ns Table 5.23 Timer B Input (Pulse Width Measurement Mode) Symbol Parameter Standard Min. Max. Unit tc(TB) TBiIN input cycle time 400 ns tw(TBH) TBiIN input HIGH pulse width 200 ns tw(TBL) TBiIN input LOW pulse width 200 ns Table 5.24 A-D Trigger Input Symbol tc(AD) tw(ADL) Parameter ADTRG input cycle time (trigger able minimum) ADTRG input LOW pulse width Standard Min. 1000 125 Max. Unit ns ns Table 5.25 Serial I/O Symbol Parameter Standard Min. Max. Unit tc(CK) CLKi input cycle time 200 ns tw(CKH) CLKi input HIGH pulse width 100 ns tw(CKL) CLKi input LOW pulse width 100 td(C-Q) TXDi output delay time th(C-Q) TXDi hold time tsu(D-C) RXDi input setup time RXDi input hold time th(C-D) ns 80 ns 0 30 ns 90 ns ns _______ Table 5.26 External Interrupt INTi Input Symbol Parameter Standard Min. Max. Unit tw(INH) INTi input HIGH pulse width 250 ns tw(INL) INTi input LOW pulse width 250 ns Rev.2.10 Nov. 07, 2003 page 40 of 84 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 5V Switching Characteristics (VCC1 = VCC2 = 5V, VSS = 0V, at Topr = - 20 to 85oC / - 40 to 85oC unless otherwise specified) Table 5.27 Memory Expansion and Microprocessor Modes (for setting with no wait) td(BCLK-AD) th(BCLK-AD) th(RD-AD) th(WR-AD) td(BCLK-CS) th(BCLK-CS) td(BCLK-ALE) th(BCLK-ALE) td(BCLK-RD) th(BCLK-RD) td(BCLK-WR) th(BCLK-WR) td(BCLK-DB) th(BCLK-DB) td(DB-WR) th(WR-DB) td(BCLK-HLDA) Measuring condition Parameter Symbol Address output delay time Address output hold time (refers to BCLK) Address output hold time (refers to RD) Address output hold time (refers to WR) Chip select output delay time Chip select output hold time (refers to BCLK) ALE signal output delay time ALE signal output hold time RD signal output delay time RD signal output hold time WR signal output delay time WR signal output hold time Data output delay time (refers to BCLK) Data output hold time (refers to BCLK)(3) Data output delay time (refers to WR) Standard Min. Max. 25 4 0 (Note 2) 25 4 See Figure 5.1 Data output hold time (refers to WR)(3) HLDA output delay time 15 -4 25 0 25 0 40 4 (Note 1) (Note 2) 40 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns NOTES: 1. Calculated according to the BCLK frequency as follows: 0.5 X 109 f(BCLK) - 40 [ns] f(BCLK) is 12.5MHz or less. 2. Calculated according to the BCLK frequency as follows: 0.5 X 109 - 10 f(BCLK) [ns] 3. This standard value shows the timing when the output is off, and does not show hold time of data bus. Hold time of data bus varies with capacitor volume and pull-up (pull-down) resistance value. Hold time of data bus is expressed in t = -CR X ln (1 - VOL / VCC2) by a circuit of the right figure. For example, when VOL = 0.2VCC2, C = 30pF, R = 1k, hold time of output "L" level is t = - 30pF X 1k X ln (1 - 0.2VCC2 / VCC2) = 6.7ns. P0 P1 P2 P3 30pF P4 P5 P6 P7 P8 P9 P10 P11 P12 P13 P14 Figure 5.1 Ports P0 to P14 Measurement Circuit Rev.2.10 Nov. 07, 2003 page 41 of 84 R DBi C 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 5V Switching Characteristics (VCC1 = VCC2 = 5V, VSS = 0V, at Topr = - 20 to 85oC / - 40 to 85oC unless otherwise specified) Table 5.28 Memory Expansion and Microprocessor Modes (for 1- to 3-wait setting and external area access) td(BCLK-AD) th(BCLK-AD) th(RD-AD) th(WR-AD) td(BCLK-CS) th(BCLK-CS) td(BCLK-ALE) th(BCLK-ALE) td(BCLK-RD) th(BCLK-RD) td(BCLK-WR) th(BCLK-WR) td(BCLK-DB) th(BCLK-DB) td(DB-WR) th(WR-DB) td(BCLK-HLDA) Measuring condition Parameter Symbol Address output delay time Address output hold time (refers to BCLK) Address output hold time (refers to RD) Address output hold time (refers to WR) Chip select output delay time Chip select output hold time (refers to BCLK) ALE signal output delay time ALE signal output hold time RD signal output delay time RD signal output hold time WR signal output delay time WR signal output hold time Data output delay time (refers to BCLK) Data output hold time (refers to BCLK)(3) Data output delay time (refers to WR) Standard Min. Max. 25 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 4 0 (Note 2) 25 4 15 See Figure 5.1 Data output hold time (refers to WR)(3) HLDA output delay time Unit -4 25 0 25 0 40 4 (Note 1) (Note 2) 40 NOTES: 1. Calculated according to the BCLK frequency as follows: (n-0.5) X 109 - 40 f(BCLK) [ns] n is "1" for 1-wait setting, "2" for 2-wait setting and "3" for 3-wait setting. When n=1, f(BCLK) is 12.5MHz or less. 2. Calculated according to the BCLK frequency as follows: 0.5 X 109 - 10 f(BCLK) [ns] 3. This standard value shows the timing when the output is off, and does not show hold time of data bus. Hold time of data bus varies with capacitor volume and pull-up (pull-down) resistance value. Hold time of data bus is expressed in t = -CR X ln (1 - VOL / VCC2) by a circuit of the right figure. For example, when VOL = 0.2VCC2, C = 30pF, R = 1k, hold time of output "L" level is t = - 30pF X 1k X ln (1 - 0.2VCC2 / VCC2) = 6.7ns. Rev.2.10 Nov. 07, 2003 page 42 of 84 R DBi C 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 5V Switching Characteristics (VCC1 = VCC2 = 5V, VSS = 0V, at Topr = - 20 to 85oC / - 40 to 85oC unless otherwise specified) Table 5.29 Memory Expansion and Microprocessor Modes (for 2- to p 3-waitysetting, external area access and multiplex bus selection) th(BCLK-AD) th(RD-AD) Address output hold time (refers to BCLK) Address output hold time (refers to RD) 4 (Note 1) ns ns th(WR-AD) Address output hold time (refers to WR) (Note 1) ns td(BCLK-CS) th(BCLK-CS) th(RD-CS) th(WR-CS) td(BCLK-RD) th(BCLK-RD) Chip select output delay time Chip select output hold time (refers to BCLK) Chip select output hold time (refers to RD) Chip select output hold time (refers to WR) RD signal output delay time RD signal output hold time td(BCLK-WR) th(BCLK-WR) td(BCLK-DB) WR signal output delay time WR signal output hold time Data output delay time (refers to BCLK) th(BCLK-DB) td(DB-WR) Data output hold time (refers to BCLK) Data output delay time (refers to WR) 25 4 (Note 1) (Note 1) 25 0 25 0 40 See Figure 5.1 4 (Note 2) ns ns ns ns ns ns ns ns ns ns ns th(WR-DB) Data output hold time (refers to WR) td(BCLK-HLDA) HLDA output delay time td(BCLK-ALE) ALE signal output delay time (refers to BCLK) th(BCLK-ALE) ALE signal output hold time (refers to BCLK) td(AD-ALE) ALE signal output delay time (refers to Address) (Note 1) -4 (Note 3) ns ns ns th(ALE-AD) td(AD-RD) ALE signal output hold time (refers to Adderss) RD signal output delay from the end of Adress (Note 4) 0 ns ns td(AD-WR) tdZ(RD-AD) WR signal output delay from the end of Adress Address output floating start time 0 40 15 8 NOTES: 1. Calculated according to the BCLK frequency as follows: 0.5 X 109 f(BCLK) -10 [ns] 2. Calculated according to the BCLK frequency as follows: (n-0.5) X 109 -40 f(BCLK) [ns] n is "2" for 2-wait setting, "3" for 3-wait setting. 3. Calculated according to the BCLK frequency as follows: 0.5 X 109 f(BCLK) -25 [ns] 4. Calculated according to the BCLK frequency as follows: 0.5 X 109 f(BCLK) -15 Rev.2.10 Nov. 07, 2003 page 43 of 84 [ns] ns ns ns ns 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 5V XIN input tf tw(H) tr tw(L) tc tc(TA) tw(TAH) TAiIN input tw(TAL) tc(UP) tw(UPH) TAiOUT input tw(UPL) TAiOUT input (Up/down input) During event counter mode TAiIN input th(TIN-UP) (When count on falling edge is selected) tsu(UP-TIN) TAiIN input (When count on rising edge is selected) Two-phase pulse input in event counter mode tc(TA) TAiIN input tsu(TAIN-TAOUT) tsu(TAIN-TAOUT) tsu(TAOUT-TAIN) TAiOUT input tsu(TAOUT-TAIN) tc(TB) tw(TBH) TBiIN input tw(TBL) tc(AD) tw(ADL) ADTRG input Figure 5.2 Timing Diagram (1) Rev.2.10 Nov. 07, 2003 page 44 of 84 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 5V tc(CK) tw(CKH) CLKi tw(CKL) th(C-Q) TXDi td(C-Q) tsu(D-C) RXDi tw(INL) INTi input tw(INH) Figure 5.3 Timing Diagram (2) Rev.2.10 Nov. 07, 2003 page 45 of 84 th(C-D) 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) Memory Expansion Mode, Microprocessor Mode VCC1 = VCC2 = 5V (Effective for setting with wait) BCLK RD (Separate bus) WR, WRL, WRH (Separate bus) RD (Multiplexed bus) WR, WRL, WRH (Multiplexed bus) RDY input tsu(RDY-BCLK) th(BCLK-RDY) (Common to setting with wait and setting without wait) BCLK tsu(HOLD-BCLK) th(BCLK-HOLD) HOLD input HLDA output td(BCLK-HLDA) td(BCLK-HLDA) P0, P1, P2, P3, P4, P5_0 to P5_2 (1) Hi-Z NOTES: 1. These pins are set to high-impedance regardless of the input level of the BYTE pin, PM06 bit in PM0 register and PM11 bit in PM1 register. Measuring conditions : * VCC1=VCC2=5V * Input timing voltage : Determined with VIL=1.0V, VIH=4.0V * Output timing voltage : Determined with VOL=2.5V, VOH=2.5V Figure 5.4 Timing Diagram (3) Rev.2.10 Nov. 07, 2003 page 46 of 84 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 5V Memory Expansion Mode, Microprocessor Mode (For setting with no wait) Read timing BCLK td(BCLK-CS) th(BCLK-CS) 25ns.max 4ns.min CSi tcyc td(BCLK-AD) th(BCLK-AD) 25ns.max 4ns.min ADi BHE td(BCLK-ALE) th(BCLK-ALE) -4ns.min 25ns.max th(RD-AD) 0ns.min ALE td(BCLK-RD) 25ns.max th(BCLK-RD) 0ns.min RD tac1(RD-DB) (0.5 X tcyc-45)ns.max Hi-Z DBi tsu(DB-RD) 40ns.min th(RD-DB) 0ns.min Write timing BCLK td(BCLK-CS) th(BCLK-CS) 25ns.max 4ns.min CSi tcyc td(BCLK-AD) th(BCLK-AD) 25ns.max 4ns.min ADi BHE td(BCLK-ALE) th(BCLK-ALE) 25ns.max th(WR-AD) -4ns.min (0.5 X tcyc-10)ns.min ALE td(BCLK-WR) 25ns.max th(BCLK-WR) 0ns.min WR,WRL, WRH td(BCLK-DB) th(BCLK-DB) 4ns.min 40ns.max Hi-Z DBi td(DB-WR) tcyc= f(BCLK) Measuring conditions * VCC1=VCC2=5V * Input timing voltage : VIL=0.8V, VIH=2.0V * Output timing voltage : VOL=0.4V, VOH=2.4V Figure 5.5 Timing Diagram (4) Rev.2.10 Nov. 07, 2003 page 47 th(WR-DB) (0.5 X tcyc-40)ns.min (0.5 X tcyc-10)ns.min 1 of 84 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 5V Memory Expansion Mode, Microprocessor Mode (for 1-wait setting and external area access) Read timing BCLK td(BCLK-CS) th(BCLK-CS) 25ns.max 4ns.min CSi tcyc td(BCLK-AD) th(BCLK-AD) 25ns.max 4ns.min ADi BHE td(BCLK-ALE) th(RD-AD) th(BCLK-ALE) 0ns.min -4ns.min 25ns.max ALE td(BCLK-RD) th(BCLK-RD) 0ns.min 25ns.max RD tac2(RD-DB) (1.5 X tcyc-45)ns.max Hi-Z DBi th(RD-DB) tsu(DB-RD) 0ns.min 40ns.min Write timing BCLK td(BCLK-CS) th(BCLK-CS) 25ns.max 4ns.min CSi tcyc td(BCLK-AD) th(BCLK-AD) 25ns.max 4ns.min ADi BHE td(BCLK-ALE) th(BCLK-ALE) th(WR-AD) -4ns.min 25ns.max (0.5 X tcyc-10)ns.min ALE td(BCLK-WR) 25ns.max th(BCLK-WR) 0ns.min WR,WRL, WRH td(BCLK-DB) th(BCLK-DB) 4ns.min 40ns.max Hi-Z DBi td(DB-WR) tcyc= (0.5 X tcyc-40)ns.min 1 f(BCLK) Measuring conditions * VCC1=VCC2=5V * Input timing voltage : VIL=0.8V, VIH=2.0V * Output timing voltage : VOL=0.4V, VOH=2.4V Figure 5.6 Timing Diagram (5) Rev.2.10 Nov. 07, 2003 page 48 of 84 th(WR-DB) (0.5 X tcyc-10)ns.min 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 5V Memory Expansion Mode, Microprocessor Mode (for 2-wait setting and external area access) Read timing tcyc BCLK th(BCLK-CS) 4ns.min td(BCLK-CS) 25ns.max CSi th(BCLK-AD) 4ns.min td(BCLK-AD) 25ns.max ADi BHE td(BCLK-ALE) 25ns.max th(RD-AD) th(BCLK-ALE) -4ns.min 0ns.min ALE th(BCLK-RD) 0ns.min td(BCLK-RD) 25ns.max RD tac2(RD-DB) (2.5 X tcyc-45)ns.max DBi Hi-Z tSU(DB-RD) 40ns.min th(RD-DB) 0ns.min Write timing tcyc BCLK td(BCLK-CS) 25ns.max th(BCLK-CS) td(BCLK-AD) 25ns.max th(BCLK-AD) 4ns.min CSi 4ns.min ADi BHE td(BCLK-ALE) th(WR-AD) (0.5 X tcyc-10)ns.min th(BCLK-ALE) 25ns.max -4ns.min ALE td(BCLK-WR) 25ns.max th(BCLK-WR) 0ns.min WR, WRL WRH td(BCLK-DB) 40ns.max DBi Hi-Z td(DB-WR) (1.5 X tcyc-40)ns.min tcyc= th(BCLK-DB) 4ns.min 1 f(BCLK) Measuring conditions * VCC1=VCC2=5V * Input timing voltage : VIL=0.8V, VIH=2.0V * Output timing voltage : VOL=0.4V, VOH=2.4V Figure 5.7 Timing Diagram (6) Rev.2.10 Nov. 07, 2003 page 49 of 84 th(WR-DB) (0.5 X tcyc-10)ns.min 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 5V Memory Expansion Mode, Microprocessor Mode (for 3-wait setting and external area access) Read timing tcyc BCLK th(BCLK-CS) 4ns.min td(BCLK-CS) 25ns.max CSi th(BCLK-AD) td(BCLK-AD) 25ns.max 4ns.min ADi BHE td(BCLK-ALE) th(RD-AD) 0ns.min th(BCLK-ALE) 25ns.max -4ns.min ALE th(BCLK-RD) td(BCLK-RD) 25ns.max 0ns.min RD tac2(RD-DB) (3.5 X tcyc-45)ns.max DBi Hi-Z tsu(DB-RD) th(RD-DB) 40ns.min 0ns.min Write timing tcyc BCLK td(BCLK-CS) 25ns.max th(BCLK-CS) 4ns.min td(BCLK-AD) th(BCLK-AD) 4ns.min CSi 25ns.max ADi BHE td(BCLK-ALE) 25ns.max th(WR-AD) (0.5 X tcyc-10)ns.min th(BCLK-ALE) -4ns.min ALE td(BCLK-WR) 25ns.max th(BCLK-WR) 0ns.min WR, WRL WRH td(BCLK-DB) th(BCLK-DB) 40ns.max 4ns.min Hi-Z DBi td(DB-WR) (2.5 X tcyc-40)ns.min tcyc= 1 f(BCLK) Measuring conditions * VCC1=VCC2=5V * Input timing voltage : VIL=0.8V, VIH=2.0V * Output timing voltage : VOL=0.4V, VOH=2.4V Figure 5.8 Timing Diagram (7) Rev.2.10 Nov. 07, 2003 page 50 of 84 th(WR-DB) (0.5 X tcyc-10)ns.min 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 5V Memory Expansion Mode, Microprocessor Mode (For 1- or 2-wait setting, external area access and multiplex bus selection) Read timing BCLK td(BCLK-CS) th(RD-CS) (0.5 X tcyc-10)ns.min tcyc 25ns.max th(BCLK-CS) 4ns.min CSi td(AD-ALE) (0.5 X tcyc-25)ns.min th(ALE-AD) (0.5 X tcyc-15)ns.min ADi /DBi Address 8ns.max Address Data input tdZ(RD-AD) tac3(RD-DB) tsu(DB-RD) (1.5 X tcyc-45)ns.max 40ns.min th(RD-DB) 0ns.min td(AD-RD) 0ns.min td(BCLK-AD) th(BCLK-AD) 4ns.min 25ns.max ADi BHE td(BCLK-ALE) th(BCLK-ALE) 25ns.max th(RD-AD) (0.5 X tcyc-10)ns.min -4ns.min ALE td(BCLK-RD) th(BCLK-RD) 0ns.min 25ns.max RD Write timing BCLK td(BCLK-CS) tcyc th(BCLK-CS) th(WR-CS) 25ns.max 4ns.min (0.5 X tcyc-10)ns.min CSi th(BCLK-DB) td(BCLK-DB) 4ns.min 40ns.max ADi /DBi Address Data output td(DB-WR) td(AD-ALE) (1.5 X tcyc-40)ns.min (0.5 X tcyc-25)ns.min Address th(WR-DB) (0.5 X tcyc-10)ns.min td(BCLK-AD) th(BCLK-AD) 25ns.max 4ns.min ADi BHE td(BCLK-ALE) th(BCLK-ALE) td(AD-WR) -4ns.min 0ns.min 25ns.max th(WR-AD) (0.5 X tcyc-10)ns.min ALE td(BCLK-WR) 25ns.max WR,WRL, WRH tcyc= 1 f(BCLK) Measuring conditions * VCC1=VCC2=5V * Input timing voltage : VIL=0.8V, VIH=2.0V * Output timing voltage : VOL=0.4V, VOH=2.4V Figure 5.9 Timing Diagram (8) Rev.2.10 Nov. 07, 2003 page 51 of 84 th(BCLK-WR) 0ns.min 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 5V Memory Expansion Mode, Microprocessor Mode (For 3-wait setting, external area access and multiplex bus selection) Read timing tcyc BCLK th(RD-CS) (0.5 X tcyc-10)ns.min td(BCLK-CS) th(BCLK-CS) 4ns.min 25ns.max CSi td(AD-ALE) (0.5 X tcyc-25)ns.min th(ALE-AD) (0.5 X tcyc-15)ns.min ADi /DBi Address td(BCLK-AD) td(AD-RD) 25ns.max ADi BHE Data input tdZ(RD-AD) 8ns.max th(RD-DB) tac3(RD-DB) (2.5 X tcyc-45)ns.max 0ns.min tsu(DB-RD) 0ns.min th(BCLK-AD) 40ns.min 4ns.min (no multiplex) td(BCLK-ALE) 25ns.max th(RD-AD) th(BCLK-ALE) (0.5 X tcyc-10)ns.min -4ns.min ALE th(BCLK-RD) td(BCLK-RD) 0ns.min 25ns.max RD Write timing tcyc BCLK AAAA th(WR-CS) (0.5 X tcyc-10)ns.min td(BCLK-CS) 25ns.max CSi th(BCLK-DB) td(BCLK-DB) 40ns.max ADi /DBi Address th(BCLK-CS) 4ns.min 4ns.min Data output td(AD-ALE) td(DB-WR) (0.5 X tcyc-25)ns.min (2.5 X tcyc-40)ns.min th(WR-DB) (0.5 X tcyc-10)ns.min td(BCLK-AD) th(BCLK-AD) 25ns.max 4ns.min ADi BHE (no multiplex) td(BCLK-ALE) 25ns.max th(BCLK-ALE) -4ns.min th(WR-AD) td(AD-WR) td(BCLK-WR) 25ns.max WR, WRL WRH tcyc= (0.5 X tcyc-10)ns.min 0ns.min ALE 1 f(BCLK) Measuring conditions * VCC1=VCC2=5V * Input timing voltage : VIL=0.8V, VIH=2.0V * Output timing voltage : VOL=0.4V, VOH=2.4V Figure 5.10 Timing Diagram (9) Rev.2.10 Nov. 07, 2003 page 52 of 84 th(BCLK-WR) 0ns.min M16C/62 Group (M16C/62P, M16C/62PT) 5. Electrical Characteristics (M16C/62P) VCC1 = VCC2 = 3V Table 5.30 Electrical Characteristics (1) Symbol VOH Parameter HIGH output P6_0 to P6_7, P7_2 to P7_7, P8_0 to P8_4, P8_6, P8_7, voltage P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P14_0, P14_1 P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P12_0 to P12_7, P13_0 to P13_7 VOH HIGH output voltage XOUT HIGH output voltage XCOUT VOL VOL VT+-VT- Hysteresis VT+-VT- Hysteresis HIGH input current II H LOW input current II L RPULLUP Pull-up resistance IOH=-1mA VCC1-0.5 VCC1 IOH=-1mA (2) VCC2-0.5 VCC2 IOH=-0.1mA VCC1-0.5 VCC1 LOWPOWER IOH=-50A VCC1-0.5 VCC1 HIGHPOWER With no load applied With no load applied 2 .5 1.6 0 .5 IOL=1mA (2) 0 .5 IOL=0.1mA 0 .5 HIGHPOWER XCOUT V HIGHPOWER IOL=50A With no load applied 0 LOWPOWER With no load applied 0 LOWPOWER HOLD, RDY, TA0IN to TA4IN, TB0IN to TB5IN, INT0 to INT5, NMI, ADTRG, CTS0 to CTS2, SCL0 to SCL2, SDA0 to SDA2, CLK0 to CLK4, TA0OUT to TA4OUT, KI0 to KI3, RXD0 to RXD2, SIN3, SIN4 0 .2 VI=3V P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_7, P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P12_0 to P12_7, P13_0 to P13_7, P14_0, P14_1, XIN, RESET, CNVSS, BYTE VI=0V P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P6_0 to P6_7, P7_2 to P7_7, P8_0 to P8_4, P8_6, P8_7, P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P12_0 to P12_7, P13_0 to P13_7, P14_0, P14_1 VI=0V Feedback resistance XIN Feedback resistance XCIN VRAM RAM retention voltage (0.7) 0 .2 P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_7, P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P12_0 to P12_7, P13_0 to P13_7, P14_0, P14_1, XIN, RESET, CNVSS, BYTE RfXCIN 0 .5 0 .2 RESET XIN RfXIN 50 100 3.0 25 At stop mode 2 .0 NOTES: 1. Referenced to VCC1=VCC2=2.7 to 3.3V, VSS=0V at Topr = -20 to 85 C / -40 to 85 C, f(BCLK)=10MHz unless otherwise specified. 2. VCC1 for the port P6 to P11 and P14, and VCC2 for the port P0 to P5 and P12 to P13. 3. There is no external connections for port P1_0 to P1_7, P4_4 to P4_7, P7_2 to P7_5 and P9_1 in 80-pin version. Rev.2.10 Nov. 07, 2003 page 53 of 84 V V IOL=1mA XOUT Unit V P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P12_0 to P12_7, P13_0 to P13_7 LOW output voltage VT+-VT- Standard Max. Typ. P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_4, P8_6, P8_7, P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P14_0, P14_1 LOW output voltage Hysteresis Min. HIGHPOWER LOWPOWER LOW output voltage Measuring condition V V 0 .8 V 1 .8 V 0 .8 V 4 .0 A -4 . 0 A 500 k M M V 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 3V Table 5.31 Electrical Characteristics (2) (1) Symbol Measuring condition Parameter In single-chip mode, the output pins are open and other pins are VSS Mask ROM Flash memory Min. Standard Typ. f(BCLK)=10MHz, No division 8 No division, Ring oscillation 1 f(BCLK)=10MHz, No division 8 No division, Ring oscillation ICC Max. 11 Unit mA mA 13 mA 1 .8 mA Flash memory Program f(BCLK)=10MHz, Vcc1=3.0V 12 mA Flash memory Erase f(BCLK)=10MHz, Vcc1=3.0V 22 mA Mask ROM f(XCIN)=32kHz, Low power dissipation mode, ROM (3) 25 A 25 A 420 A Ring oscillation, Wait mode 45 A f(BCLK)=32kHz, Wait mode (2), 6.0 A 1.8 A Power supply current (VCC1=2.7 to 3.6V) Flash memory Mask ROM Flash memory f(BCLK)=32kHz, Low power dissipation mode, RAM (3) f(BCLK)=32kHz, Low power dissipation mode, Flash memory (3) Oscillation capacity High f(BCLK)=32kHz, Wait mode (2), Oscillation capacity Low Stop mode, Topr=25C 0 .7 3.0 A 0.6 4 A Reset level detection dissipation current (4) 0.4 2 A RAM retention limit detection dissipation current (4) 0 .9 4 A Idet4 Voltage down detection dissipation current Idet3 Idet2 (4) NOTES: 1. Referenced to VCC1=VCC2=2.7 to 3.3V, VSS=0V at Topr = -20 to 85 C / -40 to 85 C, f(BCLK)=10MHz unless otherwise specified. 2. With one timer operated using fC32. 3. This indicates the memory in which the program to be executed exists. 4. Idet is dissipation current when the following bit is set to "1" (detection circuit enabled). Idet4: VC27 bit of VCR2 register Idet3: VC26 bit of VCR2 register Idet2: VC25 bit of VCR2 register Rev.2.10 Nov. 07, 2003 page 54 of 84 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 3V Timing Requirements (VCC1 = VCC2 = 3V, VSS = 0V, at Topr = - 20 to 85oC / - 40 to 85oC unless otherwise specified) Table 5.32 External Clock Input (XIN input) Symbol tc tw(H) tw(L) tr tf Parameter External clock input cycle time External clock input HIGH pulse width External clock input LOW pulse width External clock rise time External clock fall time Standard Min. Max. Unit ns 100 40 40 18 18 ns ns ns ns Table 5.33 Memory Expansion and Microprocessor Modes Symbol Parameter tac1(RD-DB) Data input access time (for setting with no wait) tac2(RD-DB) Data input access time (for setting with wait) Data input access time (when accessing multiplex bus area) Data input setup time RDY input setup time HOLD input setup time Data input hold time RDY input hold time HOLD input hold time tac3(RD-DB) tsu(DB-RD) tsu(RDY-BCLK ) tsu(HOLD-BCLK ) th(RD-DB) th(BCLK -RDY) th(BCLK-HOLD ) Standard Min. Max. (Note 1) (Note 2) (Note 3) 50 Unit ns ns ns 50 ns ns ns 0 ns 0 ns 0 ns 40 NOTES: 1. Calculated according to the BCLK frequency as follows: 0.5 X 109 f(BCLK) - 60 [ns] 2. Calculated according to the BCLK frequency as follows: (n-0.5) X 109 - 60 f(BCLK) [ns] n is "2" for 1-wait setting, "3" for 2-wait setting and "4" for 3-wait setting. 3. Calculated according to the BCLK frequency as follows: (n-0.5) X 109 - 60 f(BCLK) Rev.2.10 Nov. 07, 2003 page 55 [ns] of 84 n is "2" for 2-wait setting, "3" for 3-wait setting. 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 3V Timing Requirements (VCC1 = VCC2 = 3V, VSS = 0V, at Topr = - 20 to 85oC / - 40 to 85oC unless otherwise specified) Table 5.34 Timer A Input (Counter Input in Event Counter Mode) Symbol Parameter tc(TA) TAiIN input cycle time tw(TAH) TAiIN input HIGH pulse width tw(TAL) TAiIN input LOW pulse width Standard Max. Min. 150 60 Unit ns ns ns 60 Table 5.35 Timer A Input (Gating Input in Timer Mode) Symbol Parameter tc(TA) TAiIN input cycle time tw(TAH) tw(TAL) TAiIN input HIGH pulse width TAiIN input LOW pulse width Standard Min. Max. 600 300 300 Unit ns ns ns Table 5.36 Timer A Input (External Trigger Input in One-shot Timer Mode) Symbol Parameter Standard Max. Min. Unit tc(TA) TAiIN input cycle time 300 ns tw(TAH) tw(TAL) TAiIN input HIGH pulse width TAiIN input LOW pulse width 150 150 ns ns Table 5.37 Timer A Input (External Trigger Input in Pulse Width Modulation Mode) Symbol tw(TAH) tw(TAL) Parameter TAiIN input HIGH pulse width TAiIN input LOW pulse width Standard Min. Max. 150 150 Unit ns ns Table 5.38 Timer A Input (Counter Increment/decrement Input in Event Counter Mode) tc(UP) TAiOUT input cycle time Standard Min. Max. 3000 tw(UPH) tw(UPL) tsu(UP-TIN) th(TIN-UP) TAiOUT input HIGH pulse width 1500 TAiOUT input LOW pulse width TAiOUT input setup time TAiOUT input hold time 1500 600 Symbol Parameter 600 Unit ns ns ns ns ns Table 5.39 Timer A Input (Two-phase Pulse Input in Event Counter Mode) Symbol Parameter tc(TA) TAiIN input cycle time tsu(TAIN-TAOUT) TAiOUT input setup time tsu(TAOUT-TAIN) TAiIN input setup time Rev.2.10 Nov. 07, 2003 page 56 of 84 Standard Min. Max. 2 500 500 Unit s ns ns 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 3V Timing Requirements (VCC1 = VCC2 = 3V, VSS = 0V, at Topr = - 20 to 85oC / - 40 to 85oC unless otherwise specified) Table 5.40 Timer B Input (Counter Input in Event Counter Mode) Symbol Parameter Standard Min. Max. Unit tc(TB) TBiIN input cycle time (counted on one edge) 150 ns tw(TBH) TBiIN input HIGH pulse width (counted on one edge) 60 ns tw(TBL) TBiIN input LOW pulse width (counted on one edge) TBiIN input cycle time (counted on both edges) 60 300 ns tc(TB) tw(TBH) TBiIN input HIGH pulse width (counted on both edges) 120 ns tw(TBL) TBiIN input LOW pulse width (counted on both edges) 120 ns ns Table 5.41 Timer B Input (Pulse Period Measurement Mode) Symbol Parameter Standard Min. Max. Unit tc(TB) TBiIN input cycle time 600 ns tw(TBH) tw(TBL) TBiIN input HIGH pulse width TBiIN input LOW pulse width 300 300 ns ns Table 5.42 Timer B Input (Pulse Width Measurement Mode) Symbol Parameter Standard Min. Max. Unit tc(TB) TBiIN input cycle time 600 tw(TBH) TBiIN input HIGH pulse width 300 ns 300 ns tw(TBL) TBiIN input LOW pulse width ns Table 5.43 A-D Trigger Input Symbol tc(AD) tw(ADL) Parameter ADTRG input cycle time (trigger able minimum) ADTRG input LOW pulse width Standard Min. 1500 200 Max. Unit ns ns Table 5.44 Serial I/O Symbol Parameter Standard Min. Max. Unit tc(CK) CLKi input cycle time 300 ns tw(CKH) CLKi input HIGH pulse width 150 ns tw(CKL) CLKi input LOW pulse width 150 td(C-Q) TXDi output delay time th(C-Q) TXDi hold time tsu(D-C) RXDi input setup time RXDi input hold time th(C-D) ns 160 ns 0 50 ns 90 ns ns _______ Table 5.45 External Interrupt INTi Input Symbol Parameter tw(INH) INTi input HIGH pulse width tw(INL) INTi input LOW pulse width Rev.2.10 Nov. 07, 2003 page 57 of 84 Standard Min. 380 380 Max. Unit ns ns 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 3V Switching Characteristics (VCC1 = VCC2 = 3V, VSS = 0V, at Topr = - 20 to 85oC / - 40 to 85oC unless otherwise specified) Table 5.46 Memory Expansion, Microprocessor Modes (for setting with no wait) Symbol td(BCLK-AD) th(BCLK-AD) th(RD-AD) th(WR-AD) td(BCLK-CS) th(BCLK-CS) td(BCLK-ALE) th(BCLK-ALE) td(BCLK-RD) th(BCLK-RD) td(BCLK-WR) th(BCLK-WR) td(BCLK-DB) th(BCLK-DB) td(DB-WR) th(WR-DB) td(BCLK-HLDA) Measuring condition Parameter Address output delay time Address output hold time (refers to BCLK) Address output hold time (refers to RD) Address output hold time (refers to WR) Chip select output delay time Chip select output hold time (refers to BCLK) ALE signal output delay time ALE signal output hold time RD signal output delay time RD signal output hold time WR signal output delay time WR signal output hold time Data output delay time (refers to BCLK) Data output hold time (refers to BCLK)(3) Data output delay time (refers to WR) Standard Min. Max. 30 4 0 (Note 2) 30 4 25 See Figure 5.11 Data output hold time (refers to WR)(3) HLDA output delay time -4 30 0 30 0 40 4 (Note 1) (Note 2) 40 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns NOTES: 1. Calculated according to the BCLK frequency as follows: 0.5 X 109 f(BCLK) - 40 [ns] f(BCLK) is 12.5MHz or less. 2. Calculated according to the BCLK frequency as follows: 0.5 X 109 f(BCLK) - 10 [ns] 3. This standard value shows the timing when the output is off, and does not show hold time of data bus. Hold time of data bus varies with capacitor volume and pull-up (pull-down) resistance value. Hold time of data bus is expressed in t = -CR X ln (1 - VOL / VCC2) by a circuit of the right figure. For example, when VOL = 0.2VCC2, C = 30pF, R = 1k, hold time of output "L" level is t = - 30pF X 1k X ln (1 - 0.2VCC2 / VCC2) = 6.7ns. P0 P1 P2 P3 30pF P4 P5 P6 P7 P8 P9 P10 P11 P12 P13 P14 Figure 5.11 Ports P0 to P14 Measurement Circuit Rev.2.10 Nov. 07, 2003 page 58 of 84 R DBi C 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 3V Switching Characteristics (VCC1 = VCC2 = 3V, VSS = 0V, at Topr = - 20 to 85oC / - 40 to 85oC unless otherwise specified) Table 5.47 Memory expansion and Microprocessor Modes (for 1- to 3-wait setting and external area access) Symbol td(BCLK-AD) th(BCLK-AD) th(RD-AD) th(WR-AD) td(BCLK-CS) th(BCLK-CS) td(BCLK-ALE) th(BCLK-ALE) td(BCLK-RD) th(BCLK-RD) td(BCLK-WR) th(BCLK-WR) td(BCLK-DB) th(BCLK-DB) td(DB-WR) th(WR-DB) td(BCLK-HLDA) Measuring condition Parameter Address output delay time Address output hold time (refers to BCLK) Address output hold time (refers to RD) Address output hold time (refers to WR) Chip select output delay time Chip select output hold time (refers to BCLK) ALE signal output delay time ALE signal output hold time RD signal output delay time RD signal output hold time WR signal output delay time WR signal output hold time Data output delay time (refers to BCLK) Data output hold time (refers to BCLK)(3) Data output delay time (refers to WR) Standard Min. Max. 30 4 0 (Note 2) 30 4 25 See Figure 5.11 Data output hold time (refers to WR)(3) HLDA output delay time -4 30 0 30 0 40 4 (Note 1) (Note 2) 40 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns NOTES: 1. Calculated according to the BCLK frequency as follows: (n-0.5) X 109 - 40 f(BCLK) [ns] n is "1" for 1-wait setting, "2" for 2-wait setting and "3" for 3-wait setting. When n=1, f(BCLK) is 12.5MHz or less. 2. Calculated according to the BCLK frequency as follows: 0.5 X 109 - 10 f(BCLK) [ns] 3. This standard value shows the timing when the output is off, and does not show hold time of data bus. Hold time of data bus varies with capacitor volume and pull-up (pull-down) resistance value. Hold time of data bus is expressed in t = -CR X ln (1 - VOL / VCC2) by a circuit of the right figure. For example, when VOL = 0.2VCC2, C = 30pF, R = 1k, hold time of output "L" level is t = - 30pF X 1k X ln (1 - 0.2VCC2 / VCC2) = 6.7ns. Rev.2.10 Nov. 07, 2003 page 59 of 84 R DBi C 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 3V Switching Characteristics (VCC1 = VCC2 = 3V, VSS = 0V, at Topr = - 20 to 85oC / - 40 to 85oC, unless otherwise specified) Table 5.48 Memory expansion and Microprocessor Modes (for 2- to 3-wait setting, external area access and multiplex bus selection) Measuring condition Parameter Symbol td(BCLK-AD) th(BCLK-AD) Address output delay time Address output hold time (refers to BCLK) th(RD-AD) Address output hold time (refers to RD) th(WR-AD) td(BCLK-CS) th(BCLK-CS) th(RD-CS) Address output hold time (refers to WR) Chip select output delay time Chip select output hold time (refers to BCLK) Chip select output hold time (refers to RD) th(WR-CS) Chip select output hold time (refers to WR) td(BCLK-RD) th(BCLK-RD) td(BCLK-WR) th(BCLK-WR) td(BCLK-DB) th(BCLK-DB) td(DB-WR) RD signal output delay time RD signal output hold time WR signal output delay time WR signal output hold time Data output delay time (refers to BCLK) Data output hold time (refers to BCLK) Data output delay time (refers to WR) 50 4 50 4 (Note 1) (Note 1) See Figure 5.11 RD signal output delay from the end of Address WR signal output delay from the end of Address Address output floating start time -10 40 0 40 0 50 4 (Note 2) (Note 1) 40 25 -4 (Note 3) (Note 4) 0 0 8 [ns] 2. Calculated according to the BCLK frequency as follows: (n-0.5) X 10 9 f(BCLK) -50 n is "2" for 2-wait setting, "3" for 3-wait setting. [ns] 3. Calculated according to the BCLK frequency as follows: 0.5 X 10 9 f(BCLK) -40 [ns] 4. Calculated according to the BCLK frequency as follows: 0.5 X 10 9 f(BCLK) -15 Rev.2.10 Nov. 07, 2003 page 60 [ns] of 84 ns ns ns ns ns ns ns NOTES: 1. Calculated according to the BCLK frequency as follows: 0.5 X 10 9 f(BCLK) Unit ns (Note 1) (Note 1) th(WR-DB) Data output hold time (refers to WR) td(BCLK-HLDA) HLDA output delay time td(BCLK-ALE) ALE signal output delay time (refers to BCLK) th(BCLK-ALE) ALE signal output hold time (refers to BCLK) td(AD-ALE) ALE signal output delay time (refers to Address) th(ALE-AD) ALE signal output hold time (refers to Adderss) td(AD-RD) td(AD-WR) tdZ(RD-AD) Standard Min. Max. ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 3V XIN input tf tw(H) tr tw(L) tc tc(TA) tw(TAH) TAiIN input tw(TAL) tc(UP) tw(UPH) TAiOUT input tw(UPL) TAiOUT input (Up/down input) During event counter mode TAiIN input (When count on falling edge is selected) th(TIN-UP) tsu(UP-TIN) TAiIN input (When count on rising edge is selected) Two-phase pulse input in event counter mode tc(TA) TAiIN input tsu(TAIN-TAOUT) tsu(TAIN-TAOUT) tsu(TAOUT-TAIN) TAiOUT input tsu(TAOUT-TAIN) tc(TB) tw(TBH) TBiIN input tw(TBL) tc(AD) tw(ADL) ADTRG input Figure 5.12 Timing Diagram (1) Rev.2.10 Nov. 07, 2003 page 61 of 84 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 3V tc(CK) tw(CKH) CLKi tw(CKL) th(C-Q) TXDi td(C-Q) tsu(D-C) RXDi tw(INL) INTi input Figure 5.13 Timing Diagram (2) Rev.2.10 Nov. 07, 2003 page 62 of 84 tw(INH) th(C-D) 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 3V Memory Expansion Mode, Microprocessor Mode (Effective for setting with wait) BCLK RD (Separate bus) WR, WRL, WRH (Separate bus) RD (Multiplexed bus) WR, WRL, WRH (Multiplexed bus) RDY input tsu(RDY-BCLK) th(BCLK-RDY) (Common to setting with wait and setting without wait) BCLK tsu(HOLD-BCLK) th(BCLK-HOLD) HOLD input HLDA output td(BCLK-HLDA) td(BCLK-HLDA) P0, P1, P2, P3, P4, P5_0 to P5_2 (1) Hi-Z NOTES: 1. These pins are set to high-impedance regardless of the input level of the BYTE pin, PM06 bit in PM0 register and PM11 bit in PM1 register. Measuring conditions : * VCC1=VCC2=3V * Input timing voltage : Determined with VIL=0.6V, VIH=2.4V * Output timing voltage : Determined with VOL=1.5V, VOH=1.5V Figure 5.14 Timing Diagram (3) Rev.2.10 Nov. 07, 2003 page 63 of 84 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 3V Memory Expansion Mode, Microprocessor Mode (For setting with no wait) Read timing BCLK td(BCLK-CS) th(BCLK-CS) 30ns.max 4ns.min CSi tcyc td(BCLK-AD) th(BCLK-AD) 30ns.max 4ns.min ADi BHE th(BCLK-ALE) td(BCLK-ALE) -4ns.min 30ns.max th(RD-AD) 0ns.min ALE td(BCLK-RD) 30ns.max th(BCLK-RD) 0ns.min RD tac1(RD-DB) (0.5 X tcyc-60)ns.max Hi-Z DBi tsu(DB-RD) 50ns.min th(RD-DB) 0ns.min Write timing BCLK td(BCLK-CS) th(BCLK-CS) 30ns.max 4ns.min CSi tcyc td(BCLK-AD) th(BCLK-AD) 30ns.max 4ns.min ADi BHE td(BCLK-ALE) th(BCLK-ALE) 30ns.max th(WR-AD) (0.5 X tcyc-10)ns.min -4ns.min ALE td(BCLK-WR) 30ns.max th(BCLK-WR) 0ns.min WR,WRL, WRH td(BCLK-DB) th(BCLK-DB) 4ns.min 40ns.max Hi-Z DBi td(DB-WR) 1 (0.5 X tcyc-40)ns.min tcyc= f(BCLK) Measuring conditions * VCC1=VCC2=3V * Input timing voltage : VIL=0.6V, VIH=2.4V * Output timing voltage : VOL=1.5V, VOH=1.5V Figure 5.15 Timing Diagram (4) Rev.2.10 Nov. 07, 2003 page 64 of 84 th(WR-DB) (0.5 X tcyc-10)ns.min 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 3V Memory Expansion Mode, Microprocessor Mode (for 1-wait setting and external area access) Read timing BCLK td(BCLK-CS) th(BCLK-CS) 30ns.max 4ns.min CSi tcyc td(BCLK-AD) th(BCLK-AD) 30ns.max 4ns.min ADi BHE td(BCLK-ALE) th(RD-AD) th(BCLK-ALE) 0ns.min -4ns.min 30ns.max ALE td(BCLK-RD) th(BCLK-RD) 0ns.min 30ns.max RD tac2(RD-DB) (1.5 X tcyc-60)ns.max Hi-Z DBi th(RD-DB) tsu(DB-RD) 0ns.min 50ns.min Write timing BCLK td(BCLK-CS) th(BCLK-CS) 30ns.max 4ns.min CSi tcyc td(BCLK-AD) th(BCLK-AD) 30ns.max 4ns.min ADi BHE td(BCLK-ALE) th(BCLK-ALE) th(WR-AD) (0.5 X tcyc-10)ns.min -4ns.min 30ns.max ALE td(BCLK-WR) 30ns.max th(BCLK-WR) 0ns.min WR,WRL, WRH td(BCLK-DB) th(BCLK-DB) 40ns.max 4ns.min Hi-Z DBi td(DB-WR) (0.5 X tcyc-40)ns.min tcyc= 1 f(BCLK) Measuring conditions * VCC1=VCC2=3V * Input timing voltage : VIL=0.6V, VIH=2.4V * Output timing voltage : VOL=1.5V, VOH=1.5V Figure 5.16 Timing Diagram (5) Rev.2.10 Nov. 07, 2003 page 65 of 84 th(WR-DB) (0.5 X tcyc-10)ns.min 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 3V Memory Expansion Mode, Microprocessor Mode (for 2-wait setting and external area access) Read timing tcyc BCLK th(BCLK-CS) 4ns.min td(BCLK-CS) 30ns.max CSi th(BCLK-AD) 4ns.min td(BCLK-AD) 30ns.max ADi BHE td(BCLK-ALE) 30ns.max th(RD-AD) th(BCLK-ALE) -4ns.min 0ns.min ALE th(BCLK-RD) 0ns.min td(BCLK-RD) 30ns.max RD tac2(RD-DB) (2.5 X tcyc-60)ns.max DBi Hi-Z tsu(DB-RD) 50ns.min th(RD-DB) 0ns.min Write timing tcyc BCLK td(BCLK-CS) 30ns.max th(BCLK-CS) td(BCLK-AD) 30ns.max th(BCLK-AD) 4ns.min CSi 4ns.min ADi BHE td(BCLK-ALE) 30ns.max th(WR-AD) (0.5 X tcyc-10)ns.min th(BCLK-ALE) -4ns.min ALE td(BCLK-WR) 30ns.max th(BCLK-WR) 0ns.min WR, WRL WRH td(BCLK-DB) 40ns.max DBi Hi-Z td(DB-WR) (1.5 X tcyc-40)ns.min tcyc= th(BCLK-DB) 4ns.min 1 f(BCLK) Measuring conditions * VCC1=VCC2=3V * Input timing voltage : VIL=0.6V, VIH=2.4V * Output timing voltage : VOL=1.5V, VOH=1.5V Figure 5.17 Timing Diagram (6) Rev.2.10 Nov. 07, 2003 page 66 of 84 th(WR-DB) (0.5 X tcyc-10)ns.min 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 3V Memory Expansion Mode, Microprocessor Mode (for 3-wait setting and external area access) Read timing tcyc BCLK th(BCLK-CS) 4ns.min td(BCLK-CS) 30ns.max CSi th(BCLK-AD) td(BCLK-AD) 30ns.max 4ns.min ADi BHE td(BCLK-ALE) th(RD-AD) 0ns.min th(BCLK-ALE) 30ns.max -4ns.min ALE th(BCLK-RD) td(BCLK-RD) 30ns.max 0ns.min RD tac2(RD-DB) (3.5 X tcyc-60)ns.max DBi Hi-Z tsu(DB-RD) th(RD-DB) 50ns.min 0ns.min Write timing tcyc BCLK td(BCLK-CS) 30ns.max th(BCLK-CS) 4ns.min td(BCLK-AD) th(BCLK-AD) 4ns.min CSi 30ns.max ADi BHE td(BCLK-ALE) 30ns.max th(WR-AD) th(BCLK-ALE) (0.5 X tcyc-10)ns.min -4ns.min ALE th(BCLK-WR) 0ns.min td(BCLK-WR) 30ns.max WR, WRL WRH DBi td(BCLK-DB) th(BCLK-DB) 40ns.max 4ns.min Hi-Z td(DB-WR) (2.5 X tcyc-40)ns.min 1 tcyc= f(BCLK) Measuring conditions * VCC1=VCC2=3V * Input timing voltage : VIL=0.6V, VIH=2.4V * Output timing voltage : VOL=1.5V, VOH=1.5V Figure 5.18 Timing Diagram (7) Rev.2.10 Nov. 07, 2003 page 67 of 84 th(WR-DB) (0.5 X tcyc-10)ns.min 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 3V Memory Expansion Mode, Microprocessor Mode (For 2-wait setting, external area access and multiplex bus selection) Read timing BCLK td(BCLK-CS) th(BCLK-CS) th(RD-CS) (0.5 X tcyc-10)ns.min tcyc 40ns.max 4ns.min CSi td(AD-ALE) (0.5 X tcyc-40)ns.min th(ALE-AD) (0.5 X tcyc-15)ns.min ADi /DBi Address 8ns.max Address Data input tdZ(RD-AD) tac3(RD-DB) (1.5 X tcyc-60)ns.max tSU(DB-RD) th(RD-DB) 0ns.min 50ns.min td(AD-RD) th(BCLK-AD) 0ns.min td(BCLK-AD) 4ns.min 40ns.max ADi BHE td(BCLK-ALE) th(BCLK-ALE) 40ns.max th(RD-AD) (0.5 X tcyc-10)ns.min -4ns.min ALE td(BCLK-RD) th(BCLK-RD) 40ns.max 0ns.min RD Write timing BCLK tcyc td(BCLK-CS) th(BCLK-CS) th(WR-CS) 40ns.max 4ns.min (0.5 X tcyc-10)ns.min CSi th(BCLK-DB) td(BCLK-DB) 4ns.min 50ns.max ADi /DBi Address Data output td(DB-WR) td(AD-ALE) (1.5 X tcyc-50)ns.min (0.5 X tcyc-40)ns.min Address th(WR-DB) (0.5 X tcyc-10)ns.min td(BCLK-AD) th(BCLK-AD) 40ns.max ADi BHE td(BCLK-ALE) 40ns.max 4ns.min th(BCLK-ALE) td(AD-WR) -4ns.min 0ns.min th(WR-AD) (0.5 X tcyc-10)ns.min ALE td(BCLK-WR) 40ns.max WR,WRL, WRH tcyc= 1 f(BCLK) Measuring conditions * VCC1=VCC2=3V * Input timing voltage : VIL=0.6V, VIH=2.4V * Output timing voltage : VOL=1.5V, VOH=1.5V Figure 5.19 Timing Diagram (8) Rev.2.10 Nov. 07, 2003 page 68 of 84 th(BCLK-WR) 0ns.min 5. Electrical Characteristics (M16C/62P) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 3V Memory Expansion Mode, Microprocessor Mode (For 3-wait setting, external area access and multiplex bus selection) Read timing tcyc BCLK th(RD-CS) (0.5 X tcyc-10)ns.min td(BCLK-CS) th(BCLK-CS) 6ns.min 40ns.max CSi td(AD-ALE) th(ALE-AD) (0.5 X tcyc-15)ns.min (0.5 X tcyc-40)ns.min ADi /DBi Address td(BCLK-AD) 40ns.max ADi BHE Data input tdZ(RD-AD) td(AD-RD) 8ns.max th(RD-DB) tac3(RD-DB) (2.5 X tcyc-60)ns.max 0ns.min tsu(DB-RD) 0ns.min th(BCLK-AD) 50ns.min 4ns.min (No multiplex) td(BCLK-ALE) 40ns.max th(RD-AD) th(BCLK-ALE) (0.5 X tcyc-10)ns.min -4ns.min ALE th(BCLK-RD) td(BCLK-RD) 0ns.min 40ns.max RD Write timing tcyc BCLK th(WR-CS) td(BCLK-CS) (0.5 X tcyc-10)ns.min 40ns.max th(BCLK-CS) 4ns.min CSi th(BCLK-DB) td(BCLK-DB) 50ns.max ADi /DBi Address 4ns.min Data output td(AD-ALE) td(DB-WR) (0.5 X tcyc-40)ns.min (2.5 X tcyc-50)ns.min th(WR-DB) (0.5 X tcyc-10)ns.min td(BCLK-AD) 40ns.max th(BCLK-AD) 4ns.min ADi BHE (No multiplex) td(BCLK-ALE) 40ns.max th(BCLK-ALE) -4ns.min th(WR-AD) td(AD-WR) td(BCLK-WR) WR, WRL WRH tcyc= (0.5 X tcyc-10)ns.min 0ns.min ALE 40ns.max 1 f(BCLK) Measuring conditions * VCC1=VCC2=3V * Input timing voltage : VIL=0.6V, VIH=2.4V * Output timing voltage : VOL=1.5V, VOH=1.5V Figure 5.20 Timing Diagram (9) Rev.2.10 Nov. 07, 2003 page 69 of 84 th(BCLK-WR) 0ns.min M16C/62 Group (M16C/62P, M16C/62PT) 5. Electrical Characteristics (M16C/62PT) 5.2 Electrical Characteristics (M16C/62PT) Table 5.49 Absolute Maximum Ratings Condition Rated value VCC1, VCC2 Symbol Supply voltage Parameter VCC1=AVCC -0.3 to 6.5 V VCC2 Supply voltage VCC2 -0.3 to VCC1+0.1 V AVCC Analog supply voltage VCC1=AVCC Input voltage VI -0.3 to 6.5 V RESET, CNVSS, BYTE, P6_0 to P6_7, P7_2 to P7_7, P8_0 to P8_7, P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P14_0, P14_1, VREF, XIN -0.3 to VCC1+0.3 (1) V P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P12_0 to P12_7, P13_0 to P13_7 -0.3 to VCC2+0.3 (1) V -0.3 to 6.5 V -0.3 to VCC1+0.3 (1) V -0.3 to VCC2+0.3 (1) V -0.3 to 6.5 V P7_0, P7_1 Output voltage Unit P6_0 to P6_7, P7_2 to P7_7, P8_0 to P8_4, P8_6, P8_7, P9_0 to P9_7, P10_0 to P10_7, P11 0 to P11_7, P14_0, P14_1, XOUT VO P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P12_0 to P12_7, P13_0 to P13_7 P7_0, P7_1 Pd Topr Power dissipation Operating ambient temperature When the microcomputer is operating Flash program erase Tstg Storage temperature -40 C < Topr 85 C 300 -40 C < Topr 125 C 200 -40 to 85 / -40 to 125 (2) C 0 to 60 -65 to 150 NOTES : 1. There is no external connections for port P1_0 to P1_7, P4_4 to P4_7, P7_2 to P7_5 and P9_1 in 80-pin version. 2. T version = -40 to 85 C, V version = -40 to 125 C. Rev.2.10 Nov. 07, 2003 page 70 of 84 mW C 5. Electrical Characteristics (M16C/62PT) M16C/62 Group (M16C/62P, M16C/62PT) Table 5.50 Recommended Operating Conditions (1) Parameter Symbol Min. VCC1, VCC2 Supply voltage(VCC1=VCC2) AVcc Analog supply voltage Vss Supply voltage AVss 4.0 VIH 5.0 VCC1 0 5.5 Unit V V V 0 Analog supply voltage HIGH input voltage Standard Typ. Max. V P3_1 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P12_0 to P12_7, P13_0 to P13_7 0.8VCC2 VCC2 V P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 (during single-chip mode) 0.8VCC2 VCC2 V P6_0 to P6_7, P7_2 to P7_7, P8_0 to P8_7, P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P14_0, P14_1, 0.8VCC1 VCC1 V XIN, RESET, CNVSS, BYTE 0.8VCC1 6.5 V P3_1 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P12_0 to P12_7, P13_0 to P13_7 0 0.2VCC2 V P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 (during single-chip mode) 0 0.2VCC2 V P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_7, P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P14_0, P14_1, 0 0.2VCC1 V P7_0 , P7_1 LOW input voltage VIL XIN, RESET, CNVSS, BYTE IOH (peak) HIGH peak output current P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P6_0 to P6_7, P7_2 to P7_7, P8_0 to P8_4, P8_6, P8_7, P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P12_0 to P12_7, P13_0 to P13_7, P14_0, P14_1 -10.0 mA IOH (avg) HIGH average output current P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P6_0 to P6_7, P7_2 to P7_7, P8_0 to P8_4, P8_6, P8_7, P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P12_0 to P12_7, P13_0 to P13_7, P14_0, P14_1 -5.0 mA 10.0 mA 5.0 mA 16 MHz IOL (peak) LOW peak output current P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_4, P8_6, P8_7, P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P12_0 to P12_7, P13_0 to P13_7, P14_0, P14_1 IOL (avg) LOW average output current P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_4, P8_6, P8_7, P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P12_0 to P12_7, P13_0 to P13_7, P14_0, P14_1 f (XIN) Main clock input oscillation frequency f (XCIN) Sub-clock oscillation frequency f (Ring) Ring oscillation frequency f (PLL) PLL clock oscillation frequency (4) f (BCLK) CPU operation clock tSU(PLL) PLL frequency synthesizer stabilization wait time VCC1=4.0 to 5.5V 0 0.5 VCC1=4.0 to 5.5V VCC1=5.0V 32.768 50 kHz 1 2 MHz 10 24 MHz 0 24 MHz 20 ms NOTES: 1. Referenced to VCC1 = VCC2 = 4.7 to 5.5V at Topr = -40 to 85 C / -40 to 125 C unless otherwise specified. T version = -40 to 85 C, V version = -40 to 125 C. 2. The mean output current is the mean value within 100ms. 3. The total IOL(peak) for ports P0, P1, P2, P8_6, P8_7, P9, P10, P11, P14_0 and P14_1 must be 80mA max. The total IOL(peak) for ports P3, P4, P5, P6, P7, P8_0 to P8_4, P12, and P13 must be 80mA max. The total IOH(peak) for ports P0, P1, and P2 must be -40mA max. The total IOH(peak) for ports P3, P4, P5, P12, and P13 must be -40mA max. The total IOH(peak) for ports P6, P7, and P8_0 to P8_4 must be -40mA max. The total IOH(peak) for ports P8_6, P8_7, P9, P10, P11, P14_0, and P14_1 must be -40mA max. As for 80-pin version, the total IOL(peak) for all ports and IOH(peak) must be 80mA. max. due to one VCC and one VSS. 4. There is no external connections for port P1_0 to P1_7, P4_4 to P4_7, P7_2 to P7_5 and P9_1 in 80-pin version. Rev.2.10 Nov. 07, 2003 page 71 of 84 5. Electrical Characteristics (M16C/62PT) M16C/62 Group (M16C/62P, M16C/62PT) Table 5.51 A-D Conversion Characteristics (1) Symbol - Parameter Resolution Integral nonlinearity error INL Absolute accuracy Standard Unit Min. Typ. Max. VREF =VCC1 VREF= VCC1= 5V 10 bit 8 bit - Measuring condition 10 bit 10 Bits AN0 to AN7 input AN0_0 to AN0_7 input AN2_0 to AN2_7 input ANEX0, ANEX1 input 3 LSB External operation amp connection mode 7 LSB 2 LSB 3 LSB 7 LSB 2 LSB 1 3 3 40 k LSB LSB LSB k VREF =VCC1=3.3V VREF= AN0 to AN7 input VCC1= AN0_0 to AN0_7 input AN2_0 to AN2_7 input 5V ANEX0, ANEX1 input External operation amp connection mode 8 bit - DNL - - RLADDER tCONV Tolerance level impedance Differential non-linearity error Offset error Gain error Ladder resistance Conversion time(10bit), Sample & hold function available tCONV Conversion time(8bit), Sample & hold function available tSAMP VREF Sampling time Reference voltage VI A Analog input voltage VREF =VCC1=3.3V 3 VREF =VCC1 VREF =VCC1=5V, oAD=12MHz 10 2.75 VREF =VCC1=5V, oAD=12MHz 2.33 s 0.25 2.0 VCC1 s V 0 VREF V s NOTES: 1. Referenced to VCC1=AVCC=VREF=4.0 to 5.5V, VSS=AVSS=0V at Topr = -40 to 85 C / -40 to 125 C unless otherwise specified. T version = -40 to 85 C, V version = -40 to 125 C. 2. AD operation clock frequency (oAD frequency) must be 12 MHz or less. 3. A case without sample & hold function turn oAD frequency into 250 kHz or more in addition to a limit of Note 2. A case with sample & hold function turn oAD frequency into 1MHz or more in addition to a limit of Note 2. Table 5.52 D-A Conversion Characteristics (1) Symbol Parameter - - Resolution Absolute accuracy Setup time Output resistance Reference power supply input current tsu RO IVREF Measuring condition Standard Min. Typ. Max. 4 (Note 2) 10 Unit 8 1.0 3 20 Bits % s k 1.5 mA NOTES : 1. Referenced to VCC1=VREF=4.0 to 5.5V, VSS=AVSS=0V at Topr = -40 to 85 C / -40 to 125 C unless otherwise specified. T version=-40 to 85 C, V version=-40 to 125 C 2. This applies when using one D-A converter, with the D-A register for the unused D-A converter set to "00h". The A-D converter's ladder resistance is not included. Also, when D-A register contents are not "00h", the current IVREF always flows even though Vref may have been set to be unconnected by the A-D control register. Rev.2.10 Nov. 07, 2003 page 72 of 84 5. Electrical Characteristics (M16C/62PT) M16C/62 Group (M16C/62P, M16C/62PT) Table 5.53 Flash Memory Version Electrical Characteristics (1) for 100 cycle products Symbol Parameter Min. Standard Typ. Max. Unit cycle - Program and erase endurance (3) - Word program time (VCC1=5.0V, Topr=25C) 25 200 s - Lock bit program time 25 200 s - Block erase time (VCC1=5.0V, Topr=25 C) 4K bytes block 0.3 4 s - Erase all unlocked blocks time tPS - 100 8K bytes block 0.3 4 s 32K bytes block 0.5 4 s 64K bytes block 0.8 4 s (2) Flash memory circuit stabilization wait time 4Xn s 15 s 10 Data hold time (5) year Table 5.54 Flash Memory Version Electrical Characteristics (6) for 10,000 cycle products (Block A and Block 1 (7)) Symbol Parameter Min. Standard Typ. Max. Unit - Program and erase endurance (3, 8, 9) - Word program time (VCC1=5.0V, Topr=25C) 25 s - Lock bit program time 25 s - Block erase time (VCC1=5.0V, Topr=25 C) 0.3 s tPS - 10,000 (4) 4K bytes block Flash memory circuit stabilization wait time Data hold time 15 10 (5) cycle s year NOTES : 1. Referenced to VCC1=4.5 to 5.5V at Topr = 0 to 60 C unless otherwise specified. 2. n denotes the number of block erases. 3. Program and Erase Endurance refers to the number of times a block erase can be performed. If the program and erase endurance is n (n=100, 1,000, or 10,000), each block can be erased n times. For example, if a 4K bytes block A is erased after writing 1 word data 2,048 times, each to a different address, this counts as one program and erase endurance. Data cannot be written to the same address more than once without erasing the block. (Rewrite prohibited) 4. Maximum number of E/W cycles for which operation is guaranteed. 5. Topr = -40 to 85 C (T version) / -40 to 125 C (V version). 6. Referenced to VCC1 = 4.0 to 5.5V at Topr = -40 to 85 C (T version) / -40 to 125 C (V version) unless otherwise specified. 7. Table 5.55 applies for block A or block 1 program and erase endurance > 1,000. Otherwise, use Table 5.54. 8. To reduce the number of program and erase endurance when working with systems requiring numerous rewrites, write to unused word addresses within the block instead of rewrite. Erase block only after all possible addresses are used. For example, an 8-word program can be written 256 times maximum before erase becomes necessary. Maintaining an equal number of erasure between block A and block 1 will also improve efficiency. It is important to track the total number of times erasure is used. 9. Should erase error occur during block erase, attempt to execute clear status register command, then block erase command at least three times until erase error disappears. 10. Customers desiring E/W failure rate information should contact their Renesas technical support representative. Table 5.55 Flash Memory Version Program/Erase Voltage and Read Operation Voltage Characteristics (at Topr = 0 to 60oC) Flash program, erase voltage VCC1=5.0 0.5 V Rev.2.10 Nov. 07, 2003 page 73 Flash read operation voltage VCC1=4.0 to 5.5 V of 84 5. Electrical Characteristics (M16C/62PT) M16C/62 Group (M16C/62P, M16C/62PT) Table 5.56 Power Supply Circuit Timing Characteristics Symbol Parameter td(P-R) Time for internal power supply stabilization during powering-on td(R-S) STOP release time td(W-S) Low power dissipation mode wait mode release time td(M-L) Time for internal power supply stabilization when main clock oscillation starts Measuring condition Standard Typ. Max. 2 VCC1=4.0 to 5.5V Interrupt for stop mode release CPU clock td(R-S) Rev.2.10 Nov. 07, 2003 page 74 of 84 Min. Unit ms 150 s 150 s 50 s M16C/62 Group (M16C/62P, M16C/62PT) 5. Electrical Characteristics (M16C/62PT) VCC1 = VCC2 = 5V Table 5.57 Electrical Characteristics (1) Symbol VOH VOH Parameter HIGH output voltage HIGH output voltage P6_0 to P6_7, P7_2 to P7_7, P8_0 to P8_4, P8_6, P8_7, P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P14_0, P14_1 P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P12_0 to P12_7, P13_0 to P13_7 P6_0 to P6_7, P7_2 to P7_7, P8_0 to P8_4, P8_6, P8_7, P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P14_0, P14_1 P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P12_0 to P12_7, P13_0 to P13_7 HIGH output voltage HIGH output voltage XCOUT VOL VOL IOH=-5mA (2) VCC2-2.0 VCC2 IOH=-200A VCC1-0.3 VCC1 IOH=-200A (2) VCC2-0.3 VCC2 HIGHPOWER IOH=-1mA VCC1-2.0 VCC1 LOWPOWER IOH=-0.5mA VCC1-2.0 VCC1 HIGHPOWER With no load applied With no load applied P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_4, P8_6, P8_7, P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P14_0, P14_1 LOW output voltage P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P12_0 to P12_7, P13_0 to P13_7 P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_4, P8_6, P8_7, P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P14_0, P14_1 P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P12_0 to P12_7, P13_0 to P13_7 LOW output voltage Hysteresis VT+-VT- XOUT XCOUT Max. VCC1 LOW output voltage LOW output voltage Standard Typ. VCC1-2.0 LOWPOWER VOL Min. IOH=-5mA XOUT VOH Measuring condition Unit V V 2.5 1.6 V V IOL=5mA 2 .0 IOL=5mA (2) 2 .0 IOL=200A 0.45 V V IOL=200A 0.45 (2) HIGHPOWER IOL=1mA LOWPOWER IOL=0.5mA HIGHPOWER With no load applied 0 LOWPOWER With no load applied 0 2 .0 2 .0 V V HOLD, RDY, TA0IN to TA4IN, TB0IN to TB5IN, INT0 to INT5, NMI, ADTRG, CTS0 to CTS2, SCL0 to SCL2, SDA0 TO SDA2, CLK0 to CLK4, TA0OUT to TA4OUT, KI0 to KI3, RXD0 to RXD2, SIN3, SIN4 0.2 1 .0 V VT+-VT- Hysteresis RESET 0.2 2.5 V VT+-VT- Hysteresis XIN 0.2 0 .8 V HIGH input current P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_7, P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P12_0 to P12_7, P13_0 to P13_7, P14_0, P14_1, XIN, RESET, CNVSS, BYTE VI=5V 5 .0 A P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P6_0 to P6_7, P7_0 to P7_7, P8_0 to P8_7, P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P12_0 to P12_7, P13_0 to P13_7, P14_0, P14_1, XIN, RESET, CNVSS, BYTE VI=0V -5.0 A P0_0 to P0_7, P1_0 to P1_7, P2_0 to P2_7, P3_0 to P3_7, P4_0 to P4_7, P5_0 to P5_7, P6_0 to P6_7, P7_2 to P7_7, P8_0 to P8_4, P8_6, P8_7, P9_0 to P9_7, P10_0 to P10_7, P11_0 to P11_7, P12_0 to P12_7, P13_0 to P13_7, P14_0, P14_1 VI=0V II H LOW input current II L RPULLUP Pull-up resistance RfXIN Feedback resistance XIN RfXCIN Feedback resistance XCIN VRAM RAM retention voltage 30 50 1.5 15 At stop mode 2 .0 NOTES: 1. Referenced to VCC1=VCC2=4.0 to 5.5V, VSS=0V at Topr = -40 to 85 C / -40 to 125 C, f(BCLK)=24MHz unless otherwise specified. T version is -40 = 85 C, V version = -40 to 125 C. 2. There is no external connections for port P1_0 to P1_7, P4_4 to P4_7, P7_2 to P7_5 and P9_1 in 80-pin version. Rev.2.10 Nov. 07, 2003 page 75 of 84 170 k M M V 5. Electrical Characteristics (M16C/62PT) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 5V Table 5.58 Electrical Characteristics (2) (1) Symbol In single-chip mode, the output pins are open and other pins are VSS ICC Measuring condition Parameter Mask ROM f(BCLK)=24MHz, No division, PLL operation No division, Ring oscillation Flash memory f(BCLK)=24MHz, No division, PLL operation Min. Standard Typ. 14 Max. 20 1 18 Unit mA mA 27 mA No division, Ring oscillation 1 .8 mA Flash memory Program f(BCLK)=10MHz, VCC1=5.0V 15 mA Flash memory Erase f(BCLK)=10MHz, VCC1=5.0V 25 mA Mask ROM f(XCIN)=32kHz, Low power dissipation mode, ROM (3) 25 A f(BCLK)=32kHz, Low power dissipation mode, RAM (3) 25 A f(BCLK)=32kHz Low power dissipation mode, Flash memory (3) 420 A 50 A 7 .5 A 2 .0 A Power supply current (VCC1=4.0 to 5.5V) Flash memory Ring oscillation, Wait mode f(BCLK)=32kHz, Wait mode (2), Mask ROM Flash memory Oscillation capacity High f(BCLK)=32kHz, Wait mode (2), Oscillation capacity Low Stop mode, Topr=25C 0 .8 3 .0 A Idet4 Voltage down detection dissipation current (4) 0.7 4 A Idet3 Reset area detection dissipation current (4) 1.2 8 A Idet2 RAM retention limit detection dissipation current (4) 1 .1 6 A NOTES: 1. Referenced to VCC1=VCC2= 4.0 to 5.5V, VSS=0V at Topr = -20 to 85 C / -40 to 85 C, f(BCLK)=24MHz unless otherwise specified. T version = -40 to 85 C, V version = -40 to 125 C 2. With one timer operated using fC32. 3. This indicates the memory in which the program to be executed exists. 4. Idet is dissipation current when the following bit is set to "1" (detection circuit enabled). Idet4: VC27 bit of VCR2 register Idet3: VC26 bit of VCR2 register Idet2: VC25 bit of VCR2 register Rev.2.10 Nov. 07, 2003 page 76 of 84 M16C/62 Group (M16C/62P, M16C/62PT) 5. Electrical Characteristics (M16C/62PT) VCC1 = VCC2 = 5V Timing Requirements (VCC1 = VCC2 = 5V, VSS = 0V, at Topr = - 40 to 85oC (T version) / - 40 to 125oC (V version) unless otherwise specified) Table 5.59 External Clock Input (XIN input) Symbol tc tw(H) tw(L) tr tf Parameter External clock input cycle time External clock input HIGH pulse width External clock input LOW pulse width External clock rise time External clock fall time Rev.2.10 Nov. 07, 2003 page 77 of 84 Standard Min. Max. Unit ns 62.5 25 25 15 15 ns ns ns ns 5. Electrical Characteristics (M16C/62PT) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 5V Timing Requirements (VCC1 = VCC2 = 5V, VSS = 0V, at Topr = - 40 to 85oC (T version) / - 40 to 125oC (V version) unless otherwise specified) Table 5.60 Timer A Input (Counter Input in Event Counter Mode) Symbol tc(TA) Parameter TAiIN input cycle time tw(TAH) TAiIN input HIGH pulse width tw(TAL) TAiIN input LOW pulse width Standard Min. Max. 100 40 40 Unit ns ns ns Table 5.61 Timer A Input (Gating Input in Timer Mode) Symbol tc(TA) Parameter TAiIN input cycle time tw(TAH) TAiIN input HIGH pulse width tw(TAL) TAiIN input LOW pulse width Standard Min. Max. 400 200 200 Unit ns ns ns Table 5.62 Timer A Input (External Trigger Input in One-shot Timer Mode) Symbol Parameter tc(TA) tw(TAH) TAiIN input cycle time TAiIN input HIGH pulse width tw(TAL) TAiIN input LOW pulse width Standard Max. Min. Unit 200 ns 100 100 ns ns Table 5.63 Timer A Input (External Trigger Input in Pulse Width Modulation Mode) Symbol tw(TAH) tw(TAL) Parameter TAiIN input HIGH pulse width TAiIN input LOW pulse width Standard Max. Min. 100 100 Unit ns ns Table 5.64 Timer A Input (Counter Increment/decrement Input in Event Counter Mode) TAiOUT input HIGH pulse width Standard Min. Max. 2000 1000 TAiOUT input LOW pulse width TAiOUT input setup time TAiOUT input hold time 1000 400 400 Symbol tc(UP) tw(UPH) tw(UPL) tsu(UP-TIN) th(TIN-UP) Parameter TAiOUT input cycle time Unit ns ns ns ns ns Table 5.65 Timer A Input (Two-phase Pulse Input in Event Counter Mode) Symbol tc(TA) Parameter TAiIN input cycle time tsu(TAIN-TAOUT) TAiOUT input setup time tsu(TAOUT-TAIN) TAiIN input setup time Rev.2.10 Nov. 07, 2003 page 78 of 84 Standard Max. Min. 800 200 200 Unit ns ns ns M16C/62 Group (M16C/62P, M16C/62PT) 5. Electrical Characteristics (M16C/62PT) VCC1 = VCC2 = 5V Timing Requirements (VCC1 = VCC2 = 5V, VSS = 0V, at Topr = - 40 to 85oC (T version) / - 40 to 125oC (V version) unless otherwise specified) Table 5.66 Timer B Input (Counter Input in Event Counter Mode) Symbol Parameter tc(TB) TBiIN input cycle time (counted on one edge) tw(TBH) tw(TBL) tc(TB) TBiIN input cycle time (counted on both edges) tw(TBH) tw(TBL) Standard Min. Max. Unit 100 ns TBiIN input HIGH pulse width (counted on one edge) 40 ns TBiIN input LOW pulse width (counted on one edge) 40 200 ns TBiIN input HIGH pulse width (counted on both edges) 80 ns TBiIN input LOW pulse width (counted on both edges) 80 ns ns Table 5.67 Timer B Input (Pulse Period Measurement Mode) Symbol Parameter Standard Min. Max. Unit tc(TB) TBiIN input cycle time 400 ns tw(TBH) tw(TBL) TBiIN input HIGH pulse width TBiIN input LOW pulse width 200 200 ns ns Table 5.68 Timer B Input (Pulse Width Measurement Mode) Symbol Parameter Standard Min. Max. Unit tc(TB) TBiIN input cycle time 400 tw(TBH) TBiIN input HIGH pulse width 200 ns 200 ns tw(TBL) TBiIN input LOW pulse width ns Table 5.69 A-D Trigger Input Symbol tc(AD) tw(ADL) Parameter ADTRG input cycle time (trigger able minimum) ADTRG input LOW pulse width Standard Min. 1000 125 Max. Unit ns ns Table 5.70 Serial I/O Symbol Parameter Standard Min. Max. Unit tc(CK) CLKi input cycle time 200 ns tw(CKH) CLKi input HIGH pulse width 100 ns tw(CKL) CLKi input LOW pulse width 100 ns td(C-Q) TXDi output delay time th(C-Q) TXDi hold time tsu(D-C) RXDi input setup time RXDi input hold time th(C-D) 80 ns 0 30 ns 90 ns ns _______ Table 5.71 External Interrupt INTi Input Symbol Parameter tw(INH) INTi input HIGH pulse width tw(INL) INTi input LOW pulse width Rev.2.10 Nov. 07, 2003 page 79 of 84 Standard Min. 250 250 Max. Unit ns ns 5. Electrical Characteristics (M16C/62PT) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 5V Switching Characteristics (VCC1 = VCC2 = 5V, VSS = 0V, at Topr = - 40 to 85oC (T version) / - 40 to 125oC (V version) unless otherwise specified) P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 P10 Figure 5.21 Ports P0 to P10 Measurement Circuit Rev.2.10 Nov. 07, 2003 page 80 of 84 30pF 5. Electrical Characteristics (M16C/62PT) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 5V XIN input tf tw(H) tr tw(L) tc tc(TA) tw(TAH) TAiIN input tw(TAL) tc(UP) tw(UPH) TAiOUT input tw(UPL) TAiOUT input (Up/down input) During event counter mode TAiIN input th(TIN-UP) (When count on falling edge is selected) tsu(UP-TIN) TAiIN input (When count on rising edge is selected) Two-phase pulse input in event counter mode tc(TA) TAiIN input tsu(TAIN-TAOUT) tsu(TAIN-TAOUT) tsu(TAOUT-TAIN) TAiOUT input tsu(TAOUT-TAIN) tc(TB) tw(TBH) TBiIN input tw(TBL) tc(AD) tw(ADL) ADTRG input Figure 5.22 Timing Diagram (1) Rev.2.10 Nov. 07, 2003 page 81 of 84 5. Electrical Characteristics (M16C/62PT) M16C/62 Group (M16C/62P, M16C/62PT) VCC1 = VCC2 = 5V tc(CK) tw(CKH) CLKi tw(CKL) th(C-Q) TXDi td(C-Q) tsu(D-C) RXDi tw(INL) INTi input tw(INH) Figure 5.23 Timing Diagram (2) Rev.2.10 Nov. 07, 2003 page 82 of 84 th(C-D) Package Dimensions M16C/62 Group (M16C/62P, M16C/62PT) Package Dimensions MMP 80P6S-A EIAJ Package Code QFP80-P-1414-0.65 Plastic 80pin 1414mm body QFP Weight(g) 1.11 Lead Material Alloy 42 MD e JEDEC Code HD 61 b2 80 ME D 1 60 I2 Symbol HE E Recommended Mount Pad 41 20 21 A 40 c F A2 L1 b e x M A1 y b2 I2 MD ME L Detail F 100P6S-A MMP EIAJ Package Code QFP100-P-1420-0.65 A A1 A2 b c D E e HD HE L L1 x y Dimension in Millimeters Min Nom Max - - 3.05 0.1 0.2 0 - - 2.8 0.25 0.3 0.4 0.13 0.15 0.2 13.8 14.0 14.2 13.8 14.0 14.2 - 0.65 - 16.5 16.8 17.1 16.5 16.8 17.1 0.4 0.6 0.8 1.4 - - - - 0.13 - - 0.1 - 0 10 - - 0.35 1.3 - - 14.6 - - - - 14.6 Plastic 100pin 1420mm body QFP Weight(g) 1.58 Lead Material Alloy 42 MD e JEDEC Code - 81 1 b2 100 ME HD D 80 I2 Recommended Mount Pad E 30 HE Symbol 51 50 A L1 c A2 31 A A1 A2 b c D E e HD HE L L1 x y b x y Rev.2.10 Nov. 07, 2003 page 83 of 84 M A1 F e L Detail F b2 I2 MD ME Dimension in Millimeters Min Nom Max 3.05 - - 0.1 0.2 0 2.8 - - 0.25 0.3 0.4 0.13 0.15 0.2 13.8 14.0 14.2 19.8 20.0 20.2 0.65 - - 16.5 16.8 17.1 22.5 22.8 23.1 0.4 0.6 0.8 1.4 - - - - 0.13 0.1 - - 0 10 - 0.35 - - 1.3 - - 14.6 - - 20.6 - - Package Dimensions M16C/62 Group (M16C/62P, M16C/62PT) MMP Plastic 100pin 1414mm body LQFP Weight(g) 0.63 JEDEC Code - Lead Material Cu Alloy MD b2 HD ME EIAJ Package Code LQFP100-P-1414-0.50 e 100P6Q-A D 76 100 l2 Recommended Mount Pad 75 1 A A1 A2 b c D E e HD HE L L1 Lp HE E Symbol 51 25 26 50 A L1 F A3 y M L Detail F x y c x A1 b A3 A2 e b2 I2 MD ME Lp MMP EIAJ Package Code LQFP128-P-1420-0.50 Plastic 128pin 1420mm body LQFP Weight(g) - JEDEC Code - Lead Material Cu Alloy MD e 128P6Q-A Dimension in Millimeters Min Nom Max 1.7 - - 0.1 0.2 0 1.4 - - 0.13 0.18 0.28 0.105 0.125 0.175 13.9 14.0 14.1 13.9 14.0 14.1 - 0.5 - 15.8 16.0 16.2 15.8 16.0 16.2 0.3 0.5 0.7 1.0 - - 0.45 0.6 0.75 - 0.25 - - - 0.08 - - 0.1 - 0 10 - - 0.225 0.9 - - 14.4 - - - - 14.4 b2 D 128 ME HD 103 1 102 l2 Recommended Mount Pad Symbol E HE A A1 A2 b c D E e HD HE L L1 Lp 65 38 39 64 L1 A y b Rev.2.10 Nov. 07, 2003 page 84 x of 84 M L Detail F Lp A3 x y c A1 A2 e A3 F b2 I2 MD ME Dimension in Millimeters Min Nom Max 1.7 1.4 1.5 0.125 0.2 0.05 1.4 - - 0.17 0.22 0.27 0.105 0.125 0.175 13.9 14.0 14.1 19.9 20.0 20.1 0.5 - - 15.8 16.0 16.2 21.8 22.0 22.2 0.35 0.5 0.65 1.0 - - 0.45 0.6 0.75 - 0.25 - - - 0.08 0.1 - - 0 8 - 0.225 - - - 1.0 - 14.4 - - 20.4 - - REVISION HISTORY Rev. M16C/62 Group (M16C/62P, M16C/62PT) Data Sheet Date Description Summary Page 1.10 May/28/Y03 (Continued) 2 4-5 14-19 22 23 24 30 31 30-31 32 30-32 36-39 40-41 42 47 48 47-48 49 47-49 53-56 57-58 2.00 Oct./29/Y03 2-4 6 7-9 11 12-15 17,19 18,20 30 31-32 33 34,74 36 38,55 41 41-43, 58-60 44 Table 1.1.1 is partly revised. Table 1.1.2 and 1.1.3 is partly revised. SFR is partly revised. "Note 1" is partly revised. Table 1.5.3 is partly revised. Table 1.5.5 is partly revised. Table 1.5.6 is added. Table 1.5.9 is partly revised. Notes 1 and 2 in Table 1.5.26 is partly revised. Notes 1 in Table 1.5.27 is partly revised. Note 3 is added to "Data output hold time (refers to BCLK)" in Table 1.5.26 and 1.5.27. Note 4 is added to "th(ALE-AD)" in Table 1.5.28. Switching Characteristics is partly revised. th(WR-AD) and th(WR-DB) in Figure 1.5.5 to 1.5.8 is partly revised. th(ALE-AD), th(WR-CS), th(WR-DB) and th(WR-AD) in Figure 1.5.9 to 1.5.10 is partly revised. Note 2 is added to Table 1.5.29. Notes 1 and 2 in Table 1.5.45 is partly revised. Notes 1 in Table 1.5.46 is partly revised. Note 3 is added to "Data output hold time (refers to BCLK)" in Table 1.5.45 and 1.5.46. Note 4 is added to "th(ALE-AD)" in Table 1.5.47. Switching Characteristics is partly revised. th(WR-AD) and th(WR-DB) in Figure 1.5.15 to 1.5.18 is partly revised. th(ALE-AD), th(WR-CS), th(WR-DB) and th(WR-AD) in Figure 1.5.19 to 1.5.20 is partly revised. Since high reliability version is added, a group name is revised. M16C/62 Group (M16C/62P) AE M16C/62 Group (M16C/62P, M16C/62PT) Table 1.1 to 1.3 are revised. Note 3 is partly revised. Figure 1.2 Note5 is deleted. Table 1.4 to 1.7 Product List is partly revised. Table 1.8 and Figure 1.4 are added. Figure 1.5 to 1.9 ZP is added. Table 1.10 and 1.12 ZP is added to timer A. Table 1.11 and 1.13 VCC1 is added to VREF. Table 5.1 is revised. Table 5.2 and 5.3 are revised. Table 5.4 A-D Conversion Characteristics is revised. Table 5.5 D-A Conversion Characteristics revised. Table 5.6 to 5.7 and table 5.54 to 5.55 are revised. Table 5.11 is revised. Table 5.14 and 5.33 HLDA output deley time is deleted. Figure 5.1 is partly revised. Table 5.27 to 5.29 and table 5.46 to 48 HLDA output deley time is added. Figure 5.2 Timing Diagram (1) A-1 XIN input is added. REVISION HISTORY Rev. Date 2.10 Nov./07/Y03 Page 47-48 49-50 52 53 58 61 64-65 66-67 69 70-85 8-9 23 71 72 M16C/62 Group (M16C/62P, M16C/62PT) Data Sheet Description Summary Figure 5.5 to 5.6 Read timing DB --> DBi Figure 5.7 to 5.8 Write timing DB --> DBi Figure 5.10 DB --> DBi Table 5.30 is revised. Figure 5.11 is partly revised. Figure 5.12 Timing Diagram (1) XIN input is added. Figure 5.15 to 5.16 Read timing DB --> DBi Figure 5.17 to 5.18 Write timing DB --> DBi Figure 5.20 DB --> DBi Electrical Characteristics (M16C/62PT) is added. Table 1.5 to 1.7 Product List is partly revised. Note 1 is deleted. Table 3.1 is revised. Table 5.50 is revised. Table 5.51 is deleted. A-2 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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