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FDMA1025P Dual P-Channel PowerTrench®MOSFET

FDMA1025P Rev.B5www.fairchildsemi.com

FDMA1025P

Dual P-Channel PowerTrench® MOSFET

–20V, –3.1A, 155m:

Features

Max rDS(on) = 155m: at VGS = –4.5V, ID = –3.1A

Max rDS(on) = 220m: at VGS = –2.5V, ID = –2.3A

Low profile - 0.8mm maximum - in the new package MicroFET

2X2 mm

RoHS Compliant

General Description

This device is designed specifically as a single package solution

for the battery charge switch in cellular handset and other ultra -

portable applications. It features two independent P-Channel

MOSFETs with low on-state resistance for minimum conduction

losses. When connected in the typical common source

configuration, bi-directional current flow is possible.

The MicroFET 2X2 package offers exceptional thermal

performance for its physical size and well suited to linear mode

applications.

Application

DC - DC Conversion

MOSFET Maximum Ratings TA= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

VDS Drain to Source Voltage –20 V

VGS Gate to Source Voltage ±12 V

Drain Current -Continuous (Note 1a) –3.1 A

-Pulsed –6

Power Dissipation for Single Operation (Note 1a) 1.4 W

Power Dissipation (Note 1b) 0.7

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

RTJA Thermal Resistance Single Operation, Junction to Ambient (Note 1a) 86

°C/W

RTJA Thermal Resistance Single Operation, Junction to Ambient (Note 1b) 173

RTJA Thermal Resistance Dual Operation, Junction to Ambient (Note 1c) 69

RTJA Thermal Resistance Dual Operation, Junction to Ambient (Note 1d) 151

Device Marking Device Package Reel Size Tape Width Quantity

025 FDMA1025P MicroFET 2X2 7’’ 8mm 3000 units

MicroFET 2X2

S1 G1 D2

D1 G2 S2

PIN 1

D1 D2

Free from halogenated compounds and antimony

oxides

July 2014

FDMA1025P Dual P-Channel PowerTrench®MOSFET

FDMA1025P Rev.B5 www.fairchildsemi.com

Electrical Characteristics TJ = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain to Source Breakdown Voltage ID = –250PA, VGS = 0V –20 V

'BVDSS

'TJ

Breakdown Voltage Temperature

Coefficient ID = –250PA, referenced to 25°C 14 mV/°C

IDSS Zero Gate Voltage Drain Current

VDS = –16V, –1

VGS = 0V TJ = 125°C –100

IGSS Gate to Source Leakage Current VGS = ±12V, VDS = 0V ±100 nA

On Characteristics

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250PA–0.4 –0.9 –1.5 V

'VGS(th)

'TJ

Gate to Source Threshold Voltage

Temperature Coefficient ID = –250PA, referenced to 25°C –3.8 mV/°C

rDS(on) Drain to Source On Resistance

VGS = –4.5V, ID = –3.1A 88 155

m:VGS = –2.5V, ID = –2.3A 144 220

VGS = –4.5V, ID = –3.1A,TJ = 125°C 121 220

gFS Forward Transconductance VDS = –5V, ID = –3.1A 6.2 S

Dynamic Characteristics

Ciss Input Capacitance VDS = –10V, VGS = 0V,

f = 1MHz

340 450 pF

Coss Output Capacitance 80 105 pF

Crss Reverse Transfer Capacitance 45 70 pF

Switching Characteristics

td(on) Turn-On Delay Time

VDD = –10V, ID = –3.1A

VGS = –4.5V, RGEN = 6:

510ns

trRise Time 14 26 ns

td(off) Turn-Off Delay Time 13 24 ns

tfFall Time 816ns

Qg(TOT) Total Gate Charge at 4.5V VGS = 0V to –4.5V VDD = –10V

ID = –3.1A

3.4 4.8 nC

Qgs Gate to Source Gate Charge 0.8 nC

Qgd Gate to Drain “Miller” Charge 1.0 nC

Drain-Source Diode Characteristics

VSD Source to Drain Diode Forward Voltage VGS = 0V, IS=–1.1A (Note 2) –0.8 –1.2 V

trr Reverse Recovery Time IF = –3.1A, di/dt = 100A/Ps17 26 ns

Qrr Reverse Recovery Charge 10 15 nC

ISMaximum Continuous Source-Drain Diode Forward A

–1.1

FDMA1025P Dual P-Channel PowerTrench®MOSFET

FDMA1025P Rev.B5 www.fairchildsemi.com

Notes:

1. RTJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTJA is determined by the

user's board design.

(a) RTJA = 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.

(b) RTJA = 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation.

(d) RTJA = 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation.

2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0

a)86 oC/W when

mounted on a 1

in2pad of 2 oz

copper.

b)173 oC/W when

mounted on a

minimum pad of 2

oz copper.

c)69 oC/W when

mounted on a 1 in2

pad of 2 oz copper.

d)151 oC/W when

mounted on a

minimum pad of 2 oz

copper.

FDMA1025P Dual P-Channel PowerTrench®MOSFET

FDMA1025P Rev.B5 www.fairchildsemi.com

Typical Characteristics TJ = 25°C unless otherwise noted

Figure 1.

0123

-ID, DRAIN CURRENT (A)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = -3.5V

PULSE DURATION = 80Ps

DUTY CYCLE = 0.5%MAX

VGS = -2.5V

VGS = -1.8V

VGS =-4.5V

On Region Characteristics Figure 2.

0123456

VGS = -3.5V

PULSE DURATION = 80Ps

DUTY CYCLE = 0.5%MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

-ID, DRAIN CURRENT(A)

VGS = -2.5V

VGS = -1.8V

VGS =-4.5V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

-50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID =-3.1A

VGS = -4.5V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

TJ, JUNCTION TEMPERATURE (oC)

vs Junction Temperature

Figure 4.

23456

100

200

300

400

500

PULSE DURATION = 80Ps

DUTY CYCLE = 0.5%MAX

TJ= 125oC

TJ= 25oC

ID= -3.1A

rDS(on),DRAIN TO

SOURCE ON-RESISTANCE (m:)

-VGS, GATE TO SOURCE VOLTAGE (V)

O n -R es i st an ce v s G a te to

Source Voltage

Figure 5. Transfer Characteristics

1.0 1.5 2.0 2.5 3.0

TJ= -55oC

TJ= 25oC

TJ= 150oC

PULSE DURATION = 80Ps

DUTY CYCLE = 0.5%MAX

-ID, DRAIN CURRENT (A)

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 6.

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.0001

0.001

0.01

0.1

TJ = -55oC

TJ = 25oC

TJ= 150oC

VGS = 0V

-IS, REVERSE DRAIN CURRENT (A)

-VSD, BODY DIODE FORWARD VOLTAGE (V)

S ou r ce to D ra i n D io d e

Forward Voltage vs Source Current

FDMA1025P Dual P-Channel PowerTrench®MOSFET

FDMA1025P Rev.B5 www.fairchildsemi.com

Figure 7.

02468

ID= -3.1A

VDD = -12V

VDD = -8V

-VGS, GATE TO SOURCE VOLTAGE(V)

Qg, GATE CHARGE(nC)

VDD = -10V

Gate Charge Characteristics Figure 8.

0.1 1 10

100

1000

f = 1MHz

VGS = 0V

CAPACITANCE (pF)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

C a p a c i t a n c e v s D r a i n

to Source Voltage

Figure 9. Forward B i a s S afe

Operating Area

0.1 1 10

0.01

0.1

THIS AREA IS

LIMITED BY rDS(on)

100ms

10s

10ms

1ms

100us

SINGLE PULSE

TJ = MAX RATED

RTJA=173oC/W

TA = 25OC

-ID, DRAIN CURRENT (A)

-VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 10.

10-4 10-3 10-2 10-1 100101102103

100

0.6

VGS = -4.5V

SINGLE PULSE

P(PK), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (s)

= 25

I = I

FOR TEMPERATURES

ABOVE 25

C DERATE PEAK

CURRENT AS FOLLOWS:

150 TA

–

125

------------------------

S i n g l e P u l s e M a x i m u m

Power Dissipation

Figure 11. Transient Thermal Response Curve

10-4 10-3 10-2 10-1 100101102

0.001

0.01

0.1

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE, ZTJA

t, RECTANGULAR PULSE DURATION (s)

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

PDM

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZTJA x RTJA + TA

Typical Characteristics TJ = 25°C unless otherwise noted

Dimensional Outline and Pad Layout

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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

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MOSFET

FDMA1025P Dual P-Channel PowerTrench

FDMA1025P Rev.B5

6irchildsemi.comwww.fa

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Definition of Terms

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®*

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VCX™

VisualMax™

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XS™

仙童 ™

™

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Rev. I68

MOSFET

FDMA1025P Dual P-Channel PowerTrench

irchildsemi.comwww.fa

FDMA1025P Rev.B5 7

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