2N4416/2N4416A/SST4416
Vishay Siliconix
Document Number: 70242
S-50147—Rev. H, 24-Jan-05
www.vishay.com
1
N-Channel JFETs
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
2N4416 −v6−30 4.5 5
2N4416A −2.5 to −6−35 4.5 5
SST4416 −v6−30 4.5 5
FEATURES BENEFITS APPLICATIONS
DExcellent High-Frequency Gain:
2N4416/A, Gps 13 dB (typ) @
400 MHz
DVery Low Noise: 3 dB (typ) @
400 MHz
DVery Low Distortion
DHigh AC/DC Switch Off-Isolation
DWideband High Gain
DVery High System Sensitivity
DHigh Quality of Amplification
DHigh-Speed Switching Capability
DHigh Low-Level Signal Amplification
DHigh-Frequency Amplifier/Mixer
DOscillator
DSample-and-Hold
DVery Low Capacitance Switches
DESCRIPTION
The 2N4416/2N4416A/SST4416 n-channel JFETs are
designed to provide high-performance amplification at high
frequencies.
The TO-206AF (TO-72) hermetically-sealed package is
available with full military processing (see Military
Information.) The TO-236 (SOT-23) package provides a
low-cost option and is available with tape-and-reel options
(see Packaging Information). For similar products in the
TO-226AA (TO-92) package, see the J304/305 data sheet.
TO-206AF
(TO-72)
S C
D G
Top View
2N4416
2N4416A
1
23
4D
S
G
TO-236
(SOT-23)
2
3
1
Top View
SST4416 (H1)*
*Marking Code for TO-236
For applications information see AN104.
2N4416/2N4416A/SST4416
Vishay Siliconix
www.vishay.com
2Document Number: 70242
S-50147—Rev. H, 24-Jan-05
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage :
(2N/SST4416) −30 V. . . . . . . . . . . . . . . . . . . . .
(2N4416A) −35 V. . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature 300 _C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature : (2N Prefix) −65 to 200 _C. . . . . . . . . . . . . . . . . .
(SST Prefix) −65 to 150_C. . . . . . . . . . . . . . . . .
Operating Junction Temperature −55 to 150 _C. . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation : (2N Prefix)a300 mW. . . . . . . . . . . . . . . . . . . . . .
(SST Prefix)b350 mW. . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2.4 mW/_C above 25_C
b. Derate 2.8 mW/_C above 25_C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TA = 25_C UNLESS NOTED)
Limits
2N4416 2N4416A SST4416
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage V(BR)GSS IG = −1 mA , VDS = 0 V −36 −30 −35 −30 V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 1 nA −3−6−2.5 −6−6
V
Saturation Drain CurrentbIDSS VDS = 15 V, VGS = 0 V 10 5 15 5 15 5 15 mA
VGS = −20 V, VDS = 0 V (2N) −2−100 −100 pA
Gate Reverse Current
IGSS
TA = 150_C−4−100 −100
Gate Reverse Current IGSS VGS = −15 V, VDS = 0 V (SST) −0.002 −1nA
TA = 125_C−0.6
Gate Operating Current IGVDG = 10 V, ID = 1 mA −20
pA
Drain Cutoff CurrentcID(off) VDS = 10 V, VGS = −6 V 2pA
Drain-Source On-ResistancecrDS(on) VGS = 0 V, ID = 300 mA150 W
Gate-Source
Forward VoltagecVGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
Forward Transconductancebgfs VDS = 15 V, VGS = 0 V 6 4.5 7.5 4.5 7.5 4.5 7.5 mS
Common-Source
Output Conductancebgos
VDS = 15 V
,
VGS = 0 V
f = 1 kHz 15 50 50 50 mS
Common-Source
Input Capacitance Ciss 2.2 4 4
Common-Source
Reverse Transfer Capacitance Crss VDS = 15 V, VGS = 0 V
f = 1 MHz 0.7 0.8 0.8 pF
Common-Source
Output Capacitance Coss 1 2 2
Equivalent Input
Noise VoltagecenVDS = 10 V, VGS = 0 V
f = 1 kHz 6nV⁄
√Hz
2N4416/2N4416A/SST4416
Vishay Siliconix
Document Number: 70242
S-50147—Rev. H, 24-Jan-05
www.vishay.com
3
HIGH-FREQUENCY SPECIFICATIONS FOR 2N4416/2N4416A (TA = 25_C UNLESS NOTED)
Limits
100 MHz 400 MHz
Parameter Symbol Test Conditions Min Max Min Max Unit
Common Source Input Conductancedgiss 100 1,000
Common Source Input Susceptancedbiss 2,500 10,000
Common Source Output Conductancedgoss VDS = 15 V, VGS = 0 V 75 100 mS
Common Source Output Susceptancedboss
DS GS
1,000 4,000
m
Common Source Forward Transconductancedgfs 4,000
Common-Source Power GaindGps VDS = 15 V, ID = 5 mA 18 10
dB
Noise FiguredNF RG = 1 kW2 4 dB
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NH
b. Pulse test: PW v300 ms duty cycle v3%.
c. This parameter not registered with JEDEC.
d. Not a production test.
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
rDS
gos
rDS @ ID = 300 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V
f = 1 kHz
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
IDSS
gfs
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
VGS(off) − Gate-Source Cutoff Voltage (V)
10
8
0
6
4
2
20
0
16
12
8
4
0−10−2−4−6−8
100
80
0
60
40
20
500
0
400
300
200
100
0−10−2−4−6−8
VDS − Drain-Source Voltage (V) VDS − Drain-Source Voltage (V)
Output Characteristics Output Characteristics
10
0
8
6
4
2
01024 68
15
0
12
9
6
3
01024 68
VGS(off) = −2 V VGS(off) = −3 V
−0.2 V
−0.4 V
−0.6 V
−0.8 V
−1.2 V
−1.0 V
VGS = 0 V
−0.6 V
−0.9 V
−1.2 V
−1.5 V
−1.8 V
VGS = 0 V
−0.3 V
VGS(off) − Gate-Source Cutoff Voltage (V)
−1.4 V
gos − Output conductance (µS)
IDSS − Saturation Drain Current (mA)
gfs − Forward Transconductance (mS)
rDS(on) − Drain-Source On-Resistance ( Ω )
ID − Drain Current (mA)
ID − Drain Current (mA)
2N4416/2N4416A/SST4416
Vishay Siliconix
www.vishay.com
4Document Number: 70242
S-50147—Rev. H, 24-Jan-05
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
5
0 1.0
4
3
2
1
0
VDS − Drain-Source Voltage (V)
0.2 0.4 0.6 0.8
VGS = 0 V
VGS(off) = −2 V
Output Characteristics
5
0 1.0
4
3
2
1
0
VDS − Drain-Source Voltage (V)
0.2 0.4 0.6 0.8
VGS = 0 V
VGS(off) = −3 V
−0.4 V
−0.2 V
−0.6 V
−0.8 V
−1.0 V
−1.2 V
−1.4 V
−1.2 V
−1.5 V
−1.8 V
−2.1 V
−0.3 V
−0.9 V
−0.6 V
10
VGS − Gate-Source Voltage (V) VGS − Gate-Source Voltage (V)
Transfer Characteristics
VGS(off) = −2 V
TA = −55_C
125_C
Transfer Characteristics
TA = −55_C
125_C
VGS(off) = −3 V
VGS − Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
VGS(off) = −2 V
TA = −55_C
125_C
VGS − Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltgage
TA = −55_C
125_C
VGS(off) = −3 V
0
8
6
4
2
0−2−0.4 −0.8 −1.2 −1.6
10
0
8
6
4
2
0−3−0.6 −1.2 −1.8 −2.4
10
0
8
6
4
2
0−2−0.4 −0.8 −1.2 −1.6
10
0
8
6
4
2
0−3−0.6 −1.2 −1.8 −2.4
VDS = 10 V VDS = 10 V
VDS = 10 V
f = 1 kHz
VDS = 10 V
f = 1 kHz
25_C
25_C25_C
25_C
gfs − Forward Transconductance (mS)
gfs − Forward Transconductance (mS)
ID − Drain Current (mA)
ID − Drain Current (mA)
ID − Drain Current (mA)
ID − Drain Current (mA)
2N4416/2N4416A/SST4416
Vishay Siliconix
Document Number: 70242
S-50147—Rev. H, 24-Jan-05
www.vishay.com
5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
ID − Drain Current (mA) ID − Drain Current (mA)
On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current
0.1 1 10
TA = 25_C
−3 V
VGS(off) = −2 V
100.1
AV+
gfs RL
1)RLgos
Assume VDD = 15 V, VDS = 5 V
RL+
10 V
ID
VGS(off) = −2 V
−3 V
300
0
240
180
120
60
100
0
80
60
40
20
1
Common-Source Input Capacitance
vs. Gate-Source Voltage Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
f = 1 MHz
VDS = 0 V
10 V
VDS = 0 V
10 V
VGS − Gate-Source Voltage (V) VGS − Gate-Source Voltage (V)
f = 1 MHz
Input Admittance Forward Admittance
100
10
1
0.1
100 1000
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
(mS)
100
10
1
0.1
100 1000
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
(mS)
f − Frequency (MHz) f − Frequency (MHz)
5
0
4
3
2
1
0−20−4−8−12 −16
3
0
2.4
1.8
1.2
0.6
0−20−4−8−12 −16
200 500 200 500
bis
gis
−bfs
gfs
rDS(on) − Drain-Source On-Resistance ( Ω )
AV − Voltage Gain
Ciss − Input Capacitance (pF)
Crss − Reverse Feedback Capacitance (pF)
2N4416/2N4416A/SST4416
Vishay Siliconix
www.vishay.com
6Document Number: 70242
S-50147—Rev. H, 24-Jan-05
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Reverse Admittance Output Admittance
10
1
0.1
0.01
100 1000
(mS)
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
−brs
−grs
10
1
0.1
0.01
100 1000
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
bos
gos
(mS)
f − Frequency (MHz)
f − Frequency (MHz)
200 500 200 500
10 100 1 k 100 k10 k
20
0
16
12
8
4
Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current
VDS = 10 V
ID = 5 mA
VGS = 0 V
0.1 1 10
TA = −55_C
125_C
VGS(off) = −3 V
ID − Drain Current (mA)f − Frequency (Hz)
20
0
16
12
8
4
VDS = 10 V
f = 1 kHz
VDG − Drain-Gate Voltage (V) ID − Drain Current (mA)
Gate Leakage Current
0.1 mA
IGSS @ 25_C
IGSS
@
125_C
Common-Source Forward
Transconductance vs. Drain Current
0.1 1 10
10
8
0
VGS(off) = −3 V
TA = −55_C
125_C
012841620
6
4
2
VDS = 10 V
f = 1 kHz
5 mA
1 mA
0.1 mA
TA = 25_C
TA = 125_C
IG @ ID = 5 mA
1 mA
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
100 nA
25_C
25_C
en − Noise Voltage nV / Hz
gos − Output Conductance (µS) gfs − Forward Transconductance (mS)
IG − Gate Leakage
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70242.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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