SIEMENS BCR 135W NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor (Ry=10kQ, R2=47KQ) S005561 Type Marking |Ordering Code =| Pin Configuration Package BCR135w [Ws _ [Q62702-c2287_[1=B |2=E |3=c |soT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VcEO 50 Vv Collector-base voltage Vcpo 50 Emitter-base voltage Veso 6 Input on Voltage Vion) 20 Dc collector current Io 100 mA Total power dissipation, Ts = 124C Prot 250 mw Junction temperature 7 150 C Storage temperature Tetg - 65... + 150 Thermal Resistance Junction ambient = Fins < 240 KAW Junction - soldering point Fithus < 105 1) Package mounted on pcb 40mm x 40mm x 1.5mm /0.5em? Cu Semiconductor Group 631 11.96SIEMENS BCR 135W Electrical Characteristics at 7,=25C, unless otherwise specified Parameter Symbol Values Unit min. Ityp. [max. DC Characteristics Collector-emitter breakdown voltage Viaryceo Vv Io = 100 HA, ip = 0 50 - - Collector-base breakdown voltage VipR)CBO Io = 10 pA, fg =0 50 - - Collector cutoff current icBO nA Vop = 40V, i =0 - - 100 Emitter cutoff current lEBO HA Veg =6V, in =0 - - 167 DC current gain hee - Io =5 MA, Vop=5V 70 - - Collector-emitter saturation voltage 1) VoEsat Vv fo = 10 MA, ip =0.5 MA - - 0.3 input off voltage Vicoft) Io = 100 HA, Veg =5V 0.5 - 1 Input on Voltage Vicon) Io =2 mA, Vop =0.3V 0.5 . 1.4 Input resistor Ay 7 10 13 kQ Resistor ratio Ay/Re 0.19 0.21 0.24 - AC Characteristics Transition frequency fr MHz Io = 10 MA, Veg = 5 V, f= 100 MHz - 150 - Collector-base capacitance Cob pF Vop = 10 V, f= 1 MHz - 2 - 1) Pulse test: t < 300us; D < 2% 632 11.96 Semiconductor GroupSIEMENS BCR 135W DC Current Gain Mge = f (Ic) Voce = 5V (common emitter configuration) 103 hee | 102 109. 410 10 10 mA . i input on Voltage Vion) = A/c) Voe = 0.3V (common emitter configuration) i Mion Semiconductor Group Collector-Emitter Saturation Voitage Voesat = Alc), re = 20 102 10! 10 0.0 02 0.4 0.6 Vv 1.0 __~ Vogeat input off voltage Vigor = A/c) Vog = 5V (common emitter configuration) Vion 633 11.96SIEMENS BCR 135W Total power dissipation Fj, = f (Ta*; Ts) * Package mounted on epoxy mw 150 \ 100 Toppy \ 50 \ | \ OL | 0 20 40 60 680 100 120 C 150 tie Ty Ts Permissible Pulse Load Fiyus = f(t) it i milli Cont HEP te Semiconductor Group Permissible Pulse Load Protmax / Protoc = {h) HTC Cut | nt CT CI 634 11.96