DSA70C150HB Schottky Diode Gen VRRM = 150 V I FAV = 2x VF = 35 A 0.77 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA70C150HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031b DSA70C150HB Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 150 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 150 V IR reverse current, drain current VR = 150 V TVJ = 25C 680 A VR = 150 V TVJ = 125C 7.5 mA TVJ = 25C 0.90 V 1.06 V 0.77 V VF IF = forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. 35 A IF = 70 A IF = 35 A IF = 70 A TVJ = 125 C TC = 150C rectangular 0.94 V T VJ = 175 C 35 A TVJ = 175 C 0.53 V d = 0.5 for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = TVJ = 25C IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved typ. 4.9 m 0.7 K/W K/W 0.25 TC = 25C 24 V f = 1 MHz 215 600 226 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20131031b DSA70C150HB Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 175 C -55 150 C 150 C 1) Weight 6 MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part number D S A 70 C 150 HB IXYS Logo g = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-247AD (3) XXXXXXXXX Part No. Zyyww Assembly Line abcd Assembly Code Date Code Ordering Standard Part Number DSA70C150HB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA70C150HB * on die level Delivery Mode Tube Code No. 506708 T VJ = 175 C Schottky V 0 max threshold voltage 0.53 V R 0 max slope resistance * 2.3 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031b DSA70C150HB Outlines TO-247 A E A2 O P1 OP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 b4 C 3x b A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 OP Q S b b2 b4 c D1 D2 E1 O P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031b DSA70C150HB Schottky 70 100 1000 900 60 10 TVJ=175C 50 150C 700 125C CT 600 800 1 IF 40 IR [A] 30 [mA] 0.1 100C TVJ = 150C 125C 25C 20 10 500 [pF] 400 75C 0.01 300 50C TVJ = 25C 200 0.001 25C 100 0 0.0 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 0 0 40 80 120 160 VR [V] VF [V] Fig. 1 Maximum forward voltage drop characteristics 0 40 80 120 160 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 40 60 50 DC 30 d = 0.5 40 P(AV) IF(AV) d= DC 0.5 0.33 0.25 0.17 0.08 20 30 [W] [A] 20 10 10 0 0 0 50 100 150 0 200 TC [C] 10 20 30 40 50 IF(AV) [A] Fig. 4 Average forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics 0.8 0.7 Single Pulse 0.6 0.5 ZthJC 0.4 [K/W] 0.3 0.2 0.1 Note: All curves are per diode 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031b