MSKD100 ; MSAD100 ; MSCD100
MSKD100_MSAD100_MSCD100 - Rev2 www.microsemi.com
Oct, 2011 1/3
Module Type TYPE VRRM VRSM
MSCD100-08
MSCD100-12
MSCD100-16
MSCD100-18
MSAD100-08
MSAD100-12
MSAD100-16
MSAD100-18
MSKD100-08
MSKD100-12
MSKD100-16
MSKD100-18
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
Maximum Ratings
Symbol Conditions Values Units
IFAV Single phase ,half wave 180°conduction Tc=109℃ 100 A
IF(RMS) Single phase ,half wave 180°conduction Tc=97℃ 150 A
IFSM t=10mS Tvj =45℃ 2500 A
i2t t=10mS Tvj =45℃ 31250 A2s
Visol a.c.50HZ;r.m.s.;1min 3000 V
Tvj -40 to +150 ℃
Tstg -40 to +125 ℃
Mt To terminals(M5) 3±15% Nm
Ms To heatsink(M6) 5±15% Nm
Weight Module (Approximately) 100 g
Thermal Characteristics
Symbol Conditions Values Units
Rth(j-c) Per diode 0.35 ℃/W
Rth(c-s) Module 0.1
℃/W
Electrical Characteristics
Circuit
Glass Passivated Rectifier
Diode Modules
VRRM 800 to 1800V
IFAV 100 Am
p
Applications
y Non-controllable rectifiers for AC/AC
converters
y Line rectifiers for transistorized AC motor
controllers
y Field supply for DC motors
Features
y Blocking voltage:80 0 to 1800V
y Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
y Glass passivated chip
y UL E243882 app roved
Values
Symbol Conditions Min. Typ. Max. Units
VFM T=25℃ IF =300A － 1.22 1.35 V
IRD Tvj=150℃ VRD=VRRM － － 5 mA
MSKD100 ; MSAD100 ; MSCD100
MSKD100_MSAD100_MSCD100 - Rev2 www.microsemi.com
Oct, 2011 2/3
Performance Curves
Fig3. Transient thermal impedance Fig4. Max Non-Repetitive Forward Surge
Current
0.001 0.01 0.1 1.0 10 S 100
1 10 cycles 100
50HZ
Zth(j-C)
Fi
g
1. Power dissi
p
ation Fig2.Forward Current Derating Curve
0 ID 90 A 180
150
W
100
50
Pvtot
0 0 Tc 50 100 ℃150
200
A
100
ID
0
DC
sin.180
rec.120
rec.60
rec.30
DC
sin.180
rec.120
rec.60
rec.30
Fig5. Forward Characteristics
0 VF 0.5 1.0 1.5 V 2.0
25℃
- - -125℃
0.5
℃/ W
0.25
0
3000
A
1500
0
400
A
300
200
100
IF
0
max.
typ.
MSKD100 ; MSAD100 ; MSCD100
MSKD100_MSAD100_MSCD100 - Rev2 www.microsemi.com
Oct, 2011 3/3
Package Outline Information
CASE: D1
Dimensions in mm
