GENERAL ps SO SEMICONDUCTOR GS9013 9 Small Signal Transistors (NPN) a - =I ~~ 2 J ao] ey _ =z i=] 2 ==] TO-226AA (TO-92) 0.181 (4.8) 0.142 (3.6) Features 7 <> s 1 * NPN Silicon Epitaxial Planar Transistors for switching x | and amplifier applications. Especially suitable for AF~ BS | driver stages and low power output stages such as 3 LL. portable radios in class-B push-pull operation. a | * Complementary to GS9012 N | . = | | Mechanical Data S Case: TO-92 Plastic Package Weight: approx. 0.189 | Packaging Codes/Options: . E6/Bulk- 5K per container, 20K per box max. E7/4K per Ammo mag., 20K per box 0.022 (0.55) - 0,098 (2.5) are e Cc er Bottom B View Dimensions in inches and (millimeters) Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified Parameter Symbol Value Unit Collector-Base Voltage VcBo 40 Vv Collector-Emitter Voltage VcEO 20 Vv Emitter-Base Voltage VEBO 5 Vv Collector Current Ic 500 mA Power Dissipation at Tamb = 25C Ptot 625") mw Thermal Resistance Junction to Ambient Air ReJA 200 C/W Junction Temperature Tj 150 C Storage Temperature Range Ts 55 to +150 C Notes: (1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case 5/8/00 113GENERAL > | 8 SEMICONDUCTOR GS9013 Small Signal Transistors (NPN) Electrical Characteristics (Ta = 25C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Current Gain Group D Vce = 1V, Ic = 50mA 64 _ 91 E 78 _ 112 DC Current Gain 5 hreE a ree _ H 144 _ 202 VcE = 1V, Ic = 500mA 40 120 - Collector-Emitter Breakdown Voltage V(BR)CEO Ic = 1mA, IB =0 20 _ _ Vv Collector-Base Breakdown Voltage V(BR)CBO Ic = 100A, lE = 0 40 _ _ Vv Emitter-Base Breakdown Voltage V(BR)EBO le = 100pA, Ic = 0 5 _- Vv Collector Cut-off Current IcBo Vcs = 25V, le =0 _ 100 nA Emitter Cut-off Current lEBO Ves = 3V, Ic =0 _ _ 100 nA Collector-Emitter Saturation Voltage VcE(sat) Ic = 500mA, IB = 50mA _ 0.16 0.6 Vv Base-Emitter Saturation Voltage VBE(sat) tc = 500mA, Ip = 50mA _ 0.91 1.2 v Base-Emitter ON Valtage VBE(on) VcE= 1V,Ic=10mA 0.6 0.67 0.7 Vv 114