© 2013 IXYS CORPORATION, All Rights Reserved DS100295A(07/13)
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250A 1000 V
VGS(th) VDS = VGS, ID = 250μA 3.0 6.0 V
IGSS VGS = 20V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V 10 A
TJ = 125C 750A
RDS(on) VGS = 10V, ID = 2A, Note 1 3.3
PolarTM HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFP4N100PM
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ = 25°C to 150°C, RGS = 1 M 1000 V
VGSS Continuous  20 V
VGSM Transient  30 V
ID25 TC= 25C 2.1 A
IDM TC= 25C, Pulse Width Limited by TJM 8.0 A
IATC= 25C 4.0 A
EAS TC= 25C 200 mJ
dv/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns
PDTC= 25C 40 W
TJ - 55 ... +150 C
TJM 150 C
Tstg - 55 ... +150 C
TL1.6 mm (0.062 in.) from Case for 10 s 300 C
TSOLD Plastic Body for 10 s 260 C
MdMounting Torque 1.13/10 Nm/lb.in.
Weight 2.5 g
Features
Plastic Overmolded Tab for Electrical
Isolation
Avalanche Rated
Fast Intrinsic Diode
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
VDSS = 1000V
ID25 = 2.1A
RDS(on)
3.3
G = Gate D = Drain
S = Source
OVERMOLDED
GDS
Preliminary Technical Information
IXFP4N100PM
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Note 1. Pulse test, t 300s, duty cycle, d 2 %.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 4 A
ISM Repetitive, Pulse Width Limited by TJM 16 A
VSD IF = IS , VGS = 0V, Note 1 1.3 V
trr 300 ns
QRM 0.34 μC
IRM 5.30 A
IF = 2A, -di/dt = 100A/s
VR = 100V, VGS = 0V
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 2A, Note 1 1.8 3.0 S
Ciss 1456 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 90 pF
Crss 16 pF
RGi Gate Input Resistance 1.6 
td(on) 24 ns
tr 36 ns
td(off) 37 ns
tf 50 ns
Qg(on) 26 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 2A 9 nC
Qgd 12 nC
RthJC 3.1C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 2A
RG = 5 (External)
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Terminals: 1 - Gate
2 - Drain
3 - Source
123
OVERMOLDED TO-220 (IXFP...M)
© 2013 IXYS CORPORATION, All Rights Reserved
IXFP4N100PM
Fig. 1. Output Characteristics @ TJ = 25ºC
0
0.5
1
1.5
2
2.5
3
3.5
4
0123456789101112
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 2. Extended Output Cha racteris tics @ TJ = 25ºC
0
1
2
3
4
5
6
7
8
0 5 10 15 20 25 30 35
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
Fig. 3. Output Characteristics @ TJ = 125ºC
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
0 2 4 6 8 10121416182022242628
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
Fig. 4. RDS(on) Normalized to ID = 2A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Cen tigr ade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 4A
I
D
= 2A
Fig. 5 . R
DS(on)
Normalized to I
D
= 2A Value vs .
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
012345678
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0.0
0.4
0.8
1.2
1.6
2.0
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXFP4N100PM
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_4N100P(45-744)7-03-13-B
Fig. 7. Input Admittance
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
VGS - Volts
ID - Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
ID - Amperes
g
f s
- Si emens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
2
4
6
8
10
12
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD - Volts
IS - Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40
QG - NanoCoulombs
VGS - Volts
V
DS
= 500V
I
D
= 2A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
Ciss
Crss
Coss
Fig. 12. Maximum Transient Thermal Impedance
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width - Secon ds
Z
(th)JC
- ºC / W