Si4860DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFETS D PWM Optimized for High Efficiency D 100% RG Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.008 @ VGS = 10 V 16 0.011 @ VGS = 4.5 V 15 APPLICATIONS D Buck Converter - High Side - Low Side D Synchronous Rectifier - Secondary Rectifier D SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD 11 13 8 A "50 IDM Continuous Source Current (Diode Conduction)a V 16 ID 3.0 1.40 3.5 1.6 2.2 1.0 TJ, Tstg Unit W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambient (MOSFET)a Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 29 35 67 80 13 16 Unit _C/W Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71752 S-03662--Rev. C, 14-Apr-03 www.vishay.com 1 Si4860DY New Product Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 70_C 5 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS w 5 V, VGS = 10 V rDS(on) Forward Transconductancea Diode Forward Voltagea V nA mA 40 A VGS = 10 V, ID = 16 0.0066 0.008 VGS = 4.5 V, ID = 15 0.0090 0.011 gfs VDS = 15 V, ID = 16 60 VSD IS = 3 A, VGS = 0 V 0.70 1.1 13 18 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate-Resistance RG Turn-On Delay Time nC 5 4.0 1.7 2.9 td(on) 18 27 tr 12 18 46 70 19 30 40 70 Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 4.5 V, ID = 16 A 1.0 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 3 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 3V 10 30 20 TC = 125_C 10 25_C -55_C 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) Document Number: 71752 S-03662--Rev. C, 14-Apr-03 Si4860DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 2500 0.012 2000 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 0.015 VGS = 4.5 V 0.009 VGS = 10 V 0.006 Ciss 1500 1000 Coss 0.003 500 0.000 Crss 0 0 10 20 30 40 50 0 6 Gate Charge 24 30 On-Resistance vs. Junction Temperature 6 2.00 VDS = 15 V ID = 16 A 5 r DS(on) - On-Resistance ( W) (Normalized) V GS - Gate-to-Source Voltage (V) 18 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 4 3 2 1 VGS = 10 V ID = 16 A 1.75 1.50 1.25 1.00 0.75 0 0 4 8 12 16 0.50 -50 20 -25 0 Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.040 r DS(on) - On-Resistance ( W ) 60 TJ = 150_C 10 TJ = 25_C 0.032 0.024 0.016 ID = 16 A 0.008 0.000 1 0.00 25 TJ - Junction Temperature (_C) Qg - Total Gate Charge (nC) I S - Source Current (A) 12 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) Document Number: 71752 S-03662--Rev. C, 14-Apr-03 1.0 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si4860DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power Threshold Voltage 0.6 200 ID = 250 mA 160 Power (W) V GS(th) Variance (V) 0.3 0.0 120 -0.3 80 -0.6 40 -0.9 -50 0 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 Time (sec) TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 67_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 1 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 www.vishay.com 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71752 S-03662--Rev. C, 14-Apr-03 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1