FEATURES
DTrenchFETr Power MOSFETS
DPWM Optimized for High Efficiency
D100% RG Tested
APPLICATIONS
DBuck Converter
- High Side
- Low Side
DSynchronous Rectifier
- Secondary Rectifier
Si4860DY
Vishay Siliconix
New Product
Document Number: 71752
S-03662—Rev. C, 14-Apr-03 www.vishay.com
1
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)ID (A)
30
0.008 @ VGS = 10 V 16
30
0.011 @ VGS = 4.5 V 15
SD
SD
SD
GD
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS "20 V
Continuous Drain Current (TJ = 150
_
C)a
TA = 25_C
ID
16 11
Continuous Drain Current (TJ = 150_C)aTA = 70_CID13 8
A
Pulsed Drain Current IDM "50 A
Continuous Source Current (Diode Conduction)aIS3.0 1.40
Maximum Power Dissipationa
TA = 25_C
PD
3.5 1.6
W
Maximum Power DissipationaTA = 70_CPD2.2 1.0 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction to Ambient (MOSFET)a
t v 10 sec
R
29 35
Maximum Junction-to-Ambient (MOSFET)aSteady State RthJA 67 80 _C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 13 16
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Si4860DY
Vishay Siliconix New Product
www.vishay.com
2Document Number: 71752
S-03662—Rev. C, 14-Apr-03
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA1.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 24 V, VGS = 0 V 1
mA
Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 70_C5mA
On-State Drain CurrentaID(on) VDS w 5 V, VGS = 10 V40 A
Drain
-
Source On
-
State Resistance
a
rDS(on)
VGS = 10 V, ID = 16 0.0066 0.008
W
Drain
-
So
u
rce On
-
State Resistancea
r
DS(on) VGS = 4.5 V, ID = 15 0.0090 0.011
W
Forward Transconductanceagfs VDS = 15 V, ID = 16 60 S
Diode Forward VoltageaVSD IS = 3 A, VGS = 0 V 0.70 1.1 V
Dynamicb
Total Gate Charge Qg13 18
Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 16 A 5nC
Gate-Drain Charge Qgd 4.0
Gate-Resistance RG1.0 1.7 2.9 W
T urn-On Delay Time td(on) 18 27
Rise T ime trVDD = 15 V, RL = 15 W12 18
Turn-Off Delay T ime td(off)
VDD = 15 V
,
RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W46 70 ns
Fall Time tf19 30
Source-Drain Reverse Recovery Time trr IF = 3 A, di/dt = 100 A/ms40 70
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
10
20
30
40
50
0246810
VGS = 10 thru 4 V
25_C
TC = 125_C
-55_C
3 V
Output Characteristics Transfer Characteristics
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)ID
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)ID
Si4860DY
Vishay Siliconix
New Product
Document Number: 71752
S-03662—Rev. C, 14-Apr-03 www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.000
0.003
0.006
0.009
0.012
0.015
0 1020304050
0
1
2
3
4
5
6
0 4 8 12 16 20 0.50
0.75
1.00
1.25
1.50
1.75
2.00
-50 -25 0 25 50 75 100 125 150
0
500
1000
1500
2000
2500
0 6 12 18 24 30
Crss
Coss
Ciss
VDS = 15 V
ID = 16 A VGS = 10 V
ID = 16 A
VGS = 10 V
Gate Charge
On-Resistance vs. Drain Current
- Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
VGS - On-Resistance (rDS(on) W)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
TJ - Junction Temperature (_C)
(Normalized)
- On-Resistance (rDS(on) W)
VGS = 4.5 V
1.0 1.2
0.000
0.008
0.016
0.024
0.032
0.040
0246810
1
10
60
ID = 16 A
0.00 0.2 0.4 0.6 0.8
TJ = 25_C
TJ = 150_C
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
- On-Resistance (rDS(on) W)
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
- Source Current (A)IS
Si4860DY
Vishay Siliconix New Product
www.vishay.com
4Document Number: 71752
S-03662—Rev. C, 14-Apr-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-0.9
-0.6
-0.3
0.0
0.3
0.6
-50 -25 0 25 50 75 100 125 150
ID = 250 mA
Threshold Voltage
Variance (V)VGS(th)
TJ - Temperature (_C)
10-3 10-2 1 10 60010-1
10-4 100
0.001
01
200
80
120
100.01
Single Pulse Power
T ime (sec)
40
160
Power (W)
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 67_C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
t1t2
Notes:
4. Surface Mounted
PDM
10-3 10-2 11010-1
10-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
0.1
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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