▶DRAM and NAND Flash memories are focus products
▶CMOS Image Sensors will diversify Hynix product portfolio
▶2009 Revenues of USD $6.2B
▶Market capitalization of USD $11.7B as of December 2009
▶Global presence with 3 manufacturing sites and 30 sales offices worldwide
▶20,200 employees worldwide
The simply designed symbolic mark of superposition of two circles implies Hynix's will to
develop environment-friendly products.
The image of a sprout and green wings representing reborn nature symbolizes Hynix's
volitional environmental management initiative. The 'Eco-mark' conveys our passions to
contribute to customers and society with ecological practices (Environment Consciousness
Outreach), and environmental awareness of each employee (Environment Creates Ourselves).
Corporate Profile
Hynix Semiconductor is a leading supplier of advanced semiconductor
memory solutions and Image sensor products. We design, develop,
manufacture and market a wide variety of DRAM and NAND Flash memories
and CMOS Image Sensors (CIS). These memory components are essential in
today’s leading-edge computing, consumer and wireless communications
applications. Image Sensors are used in a wide range of portable consumer
electronics products such as handsets and handheld games.
We protect the environment with our products
Recent
Accomplishments
2010 02 Developed 26nm 64Gb NAND Flash memory
01 Developed the World’s First 2Gb Mobile Low Power DDR2 DRAM
2009 12 Introduced the World's First 40nm Class 2Gb GDDR5 DRAM
11 Acquired Intel Validation for 40nm Class 2Gb DDR3 Products
10 Introduced the Second Generation 1Gb DDR3
08 Introduced 4Gb Mobile DDR SDRAM Supported on Intel’s Moorestown Platform
04 Developed the world’s first Low Power-High Speed Mobile 1Gb DDR2 DRAM
03 Announced the world’s first 8GB 2-Rank DDR3 R-DIMM validation
02 Developed the world’s first 44nm DDR3 DRAM
01 Acquired Intel validation for the world’s first ultra-high speed DDR3 based
module for servers 4GB ECC UDIMM
2008 12 Developed the World’s First 2Gb Mobile DRAM
11 Introduced Industry's Fastest 7Gbps, 1Gb GDDR5 Graphics DRAM
04 Developed the world's fastest Mobile LPDDR2
02 Introduced 2-Rank 8GB DDR2 RDIMM
01 Announced 800MHz, 1GB/2GB UDIMM Validation
2007 11 Acquired Intel validation for 1Gb DDR2 DRAM
Developed industry's first 1Gb GDDR5 DRAM
09 Developed the world's first NAND Flash MCP with 24 stacked chips
08 Developed industry's fastest, smallest 1Gb Mobile DRAM
05 Acquired the industry's first validation on DDR3 DRAMs from Intel
03 Developed the world's fastest ECC Mobile DRAM
01
Developed the fastest memory module based on 'Wafer Level Package' technology
2006 12 Announced industry's first 60nm 1Gb DDR2 800MHz based modules
Developed the world's fastest 200MHz 512Mb mobile DRAM
09 Launched 300mm research fab line
03 Acquired the industry's first validation on 80nm 512Mb DDR2 DRAMs from Intel
01 Announced joint development plan of DOC H3 (new generation DiskOnChip
embedded flash drive) with M-Systems
2005 12 Developed the world's first 512Mb GDDR4, the industry's fastest and highest
density graphics DRAM
11 Launched the industry's first JEDEC standard 8GB DDR2 R-DIMM
04
Launched Hynix-ST joint venture construction in Wuxi City, Jiangsu Province, China
2004 03 Developed the industry's first ultra-high speed DDR SDRAM 550MHz
Acquired 1Gb DDR2 SDRAM validation from Intel
02 Developed NAND Flash memory
2003 08 Developed the world's first DRAM 1Gb DDR2
07 Developed the world's first ultra-high speed DDR500
06 Acquired the industry's first Intel validation for 512Mb DDR400
05 Launched production on 0.10-micron process technology
Launched volume production of ultra-low power 256 Mb SDRAM
04 Signed agreement with STMicroelectronics to cooperate in NAND flash
memory business
03 Introduced the world's first commercially applicable mega-level FeRAM
2002 10 Developed 0.10-micron 512MB DDR
08 Developed the world's first high-density, wide-bandwidth 256MB DDR
06 Developed the world's first 256MB SDR SDRAM for high-end consumer
application
03 Developed 1G DDR DRAM module
2001 12 Developed the world's first 128Mb DDR SDRAM for graphics
08 Completed spun-off from Hyundai Group
03 Changed the Company name to "Hynix Semiconductor Inc."
1999 10 Merged LG Semiconductor Co., Ltd.
1998 09 Developed 64M DDR synchronous DRAM
1997 05 Developed the world's first 1G synchronous DRAM
1995 10 Developed the world's first 256M SDRAM
1993 09 Acquired ISO 9001 certification on semiconductor category
1992 09 Developed 64M DRAM
1991 08 Developed 16Mb DRAM
1989 09 Developed 4M DRAM
1988 01 Developed 1M DRAM
1986 04 Established Semiconductor Research Institute
1985 10 Started mass production of 256K DRAM
1983 02 Founded Hyundai Electronics Industries Co., Ltd.
Main
Memory
A crossover to mobile computers from the traditional desktop
has already occurred. Declining prices is the primary driving
factors, especially in light of the current global economic
conditions. Mobility and weight are other features that make
mobile computers attractive to consumers, in addition to the
computing power that now rival desktops
The technology leap from DDR2 to DDR3 doubles system
performance. As DDR3 offers superior performance and power
savings, notebooks are rapidly adopting DDR3 memory.
With rapid transition trend to DDR3, processor makers are also
supporting DDR3 platforms up to speeds of 1333Mbps.
Hynix estimates DDR3 1333Mbps portion in notebook will be
around 70% by the second half of 2010.
SODIMM
PC & Server
Memory
General Description
Users now demand a powerful, full-featured mobile system, with low power consumption, extended battery life and connectivity.
There is a lot of concern about protecting the environment and it is quickly becoming one of the top priorities. Highly virtualized
applications such as data centers, servers and supercomputers, could take advantage of the low power features of the DDR3
SDRAM to enable cooler, power efficient systems.
Hynix is responding to the industry demand for eco-friendly or 'green' products that reduce power consumption, utility expenditures,
improve reliability and reduce carbon emissions. The new Hynix 1.5V 1Gb DDR3 features 25% lower power consumption than
legacy or competing solutions. The 1.35V (DDR3L) product will yield an additional 20% power savings. It will be an attractive
solution for applications requiring compliance to energy star specifications. This product would also be ideal in mobile applications,
such as notebooks, where it markedly extends battery life.
The new design philosophy adopted on the second generation 1Gb DDR3, will also be applied to future high density DRAM
components from Hynix. The new 44nm process along with Hynix’s design optimization and internal signaling innovations, reduces
power consumption and enhances performance. Devices operating at 1.5V and 1.35V (Low Voltage) exhibit similar performance
characteristics. The demand for low power consumption in both mobile system like notebooks and server systems such as
datacenters, is the emerging trend.
Hynix’s strategy is to satisfy customers needs for reduced power consumption and improved performance with technology
advancements such as this 40nm class product.
Transition to Notebook Form Factor Speed Transition in Notebook
Density 4GB So-DIMM
Organization 512Mx64
Speed 1333 Mbps
Number of Rank 2 Ranks
RDIMM
Density 16GB RDIMM
Organization 2Gx72
Speed 1066 Mbps
Number of Rank 4 Ranks
5
DDR2 SDRAM MODULE (240pin-UDIMM)
4GB 512Mx64 256Mx8 DDR2 800-666 HMP351U6AFR8C-S6 FBGA (60ball) 2 30mm Now
512Mx72 256Mx8 DDR2 800-666 HMP351U7AFR8C-S6 FBGA (60ball) 2 30mm Now
HYMP125U64CP8-S5 FBGA (60ball) 2 30mm Now
256Mx64 128Mx8 DDR2 800-555 HMP125U6EFR8C-S5 FBGA (60ball) 2 30mm Now
2GB HMP125U6NFR8C-S5 FBGA (60ball) 2 30mm Q2 ’10
256Mx72 128Mx8 DDR2 800-555 HYMP125U72CP8-S5 FBGA (60ball) 2 30mm Now
1.8V HMP125U7EFR8C-S5 FBGA (60ball) 2 30mm Now
HYMP112U64CP8-S5 FBGA (60ball) 1 30mm Now
128Mx64 128Mx8 DDR2 800-555 HMP112U6EFR8C-S5 FBGA (60ball) 1 30mm Now
1GB HMP112U6NFR8C-S5 FBGA (60ball) 1 30mm Q2 ’10
128Mx72 128Mx8 DDR2 800-555 HYMP112U72CP8-S5 FBGA (60ball) 1 30mm Now
HMP112U7EFR8C-S5 FBGA (60ball) 1 30mm Now
512MB 64Mx64 64Mx16 DDR2 800-555 HYMP164U64CP6-S5 FBGA (60ball) 1 30mm Now
VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY
DENSITY ORG.
MODULE
■FBD P/N xx : (AMB vender)(Revison) ■AMB vender N: intel, D: IDT, E NEC
Main Memory
Product Line-up
DDR2 SDRAM MODULE (240pin-RDIMM)
8GB 1Gx72 512Mx4 DDR2 800-666 HMP31GP7AFR4C-S6 FBGA (60ball) 2 30mm Now
256Mx4 (DDP) DDR2 667-555 HYMP31GP72CMP4-Y5 FBGA (63ball) 4 30mm Now
256Mx4 DDR2 800-555 HYMP151P72CP4-S5 FBGA (60ball) 2 30mm Now
4GB 512Mx72 HMP151P7EFR4C-S5 FBGA (60ball) 2 30mm Now
1.8V 256Mx8 DDR2 800-555 HMP351P7AFR8C-S5 FBGA (60ball) 2 30mm Now
128MX8 DDR2 800-555 HYMP125P72CP8-S5 FBGA (60ball) 2 30mm Now
HMP125P7EFR8C-S5 FBGA (60ball) 2 30mm Now
2GB 256Mx72 256MX4 DDR2 800-555 HYMP125P72CP4-S5 FBGA (60ball) 1 30mm Now
HMP125P7EFR4C-S5 FBGA (60ball) 1 30mm Now
128Mx8 DDR2 667-555 HYMP112P72CP8-Y5 FBGA (60ball) 1 30mm Now
VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY
DENSITY ORG.
MODULE
DDR2 SDRAM MODULE (240pin-VLP RDIMM)
4GB 512Mx72 256x4(DDP) DDR2 667-555 HYMP351P72CMP4L-Y5 FBGA (63ball) 2 18.3mm Now
2GB 256Mx72 256MX4 DDR2 800-555 HYMP125P72CP4L-S5 FBGA (60ball) 2 18.3mm Now
1.8V HMP125V7EFR4C-S5 FBGA (60ball) 2 18.3mm Now
1GB 128Mx72 128Mx8 DDR2 800-555 HYMP112P72CP8L-S5 FBGA (60ball) 1 18.3mm Now
HMP112V7EFR8C-S5 FBGA (60ball) 2 18.3mm Now
VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY
DENSITY ORG.
MODULE
DDR2 SDRAM MODULE (200pin-SODIMM)
4GB 512Mx64 256Mx8 DDR2 800-666 HMP351S6AFR8C-S6 FBGA (60ball) 2 30mm Now
HYMP125S64CP8-S5 FBGA (60ball) 2 30mm Now
2GB 256Mx64 128Mx8 DDR2 800-555 HMP125S6EFR8C-S5 FBGA (60ball) 2 30mm Now
1.8V HMP125S6NFR8C-S5 FBGA (60ball) 2 30mm Q2 ’10
1GB 128Mx64 64Mx16 DDR2 800-555 HYMP112S64CP6-S5 FBGA (60ball) 2 30mm Now
HMP112S6EFR6C-S5 FBGA (60ball) 2 30mm Now
512MB 64Mx64 64Mx16 DDR2 800-555 HYMP164S64CP6-S5 FBGA (60ball) 1 30mm Now
HMP164S6EFR6C-S5 FBGA (60ball) 1 30mm Now
VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY
DENSITY ORG.
MODULE
DDR2 SDRAM MODULE (240pin-FBDIMM)
512Mx4 DDR2 800-666 HMP31GF7EMR4C-S6xx FBGA (63ball) 4 30.35mm Now
8GB 1Gx72 (DDP) HYMP31GF72CMP4xx-S6 FBGA (63ball) 4 30.35mm Now
512Mx4 DDR2 800-666 HMP31GF7AFR4C-S6xx FBGA (60ball) 2 30.35mm Now
256Mx4 DDR2 800-555 HMP151F7EFR4C-S5xx FBGA (60ball) 2 30.35mm Now
4GB 512Mx72 HYMP151F72CP4xx-S5 FBGA (60ball) 2 30.35mm Now
1.8V 128Mx8 DDR2 800-555 HMP151F7EFR8C-S5xx FBGA (60ball) 4 30.35mm Now
HYMP151F72CP8xx-S5 FBGA (60ball) 4 30.35mm Now
2GB 256Mx72 128MX8 DDR2 800-555 HMP125F7EFR8C-S5xx FBGA (60ball) 2 30.35mm Now
HYMP125F72CP8xx-S5 FBGA (60ball) 2 30.35mm Now
1GB 128Mx72 128Mx8 DDR2 800-555 HMP112F7EFR8C-S5xx FBGA (60ball) 1 30.35mm Now
HYMP112F72CP8xx-S5 FBGA (60ball) 1 30.35mm Now
8GB 1Gx72 512Mx4 DDR2 667-555 HMP31GL7AFR4C-Y5xx FBGA (60ball) 2 30.35mm Now
4GB 512Mx72 256Mx4 DDR2 667-555 HMP151L7EFR4C-Y5xx FBGA (60ball) 2 30.35mm Now
HYMP151L72CP4xx-Y5 FBGA (60ball) 2 30.35mm Now
1.55V 2GB 256Mx72 128MX8 DDR2 667-555 HMP125L7EFR8C-Y5xx FBGA (60ball) 2 30.35mm Now
HYMP125L72CP8xx-Y5 FBGA (60ball) 2 30.35mm Now
1GB 128Mx72 128Mx8 DDR2 667-555 HMP112L7EFR8C-Y5xx FBGA (60ball) 1 30.35mm Now
HYMP112L72CP8xx-Y5 FBGA (60ball) 1 30.35mm Now
VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY
DENSITY ORG.
MODULE
6
Main Memory
Product Line-up
DDR3 SDRAM MODULE(240pin-UDIMM)
4GB 512Mx64 256Mx8 1333-999 HMT351U6BFR8C-H9 FBGA (82ball) 2 30mm Now
512Mx72 256Mx8 1333-999 HMT351U7BFR8C-H9 FBGA (82ball) 2 30mm Now
256Mx64 128Mx8 1333-999 HMT125U6TFR8C-H9 FBGA (78ball) 2 30mm Now
1.5V 2GB 256Mx8 1333-999 HMT325U6BFR8C-H9 FBGA (82ball) 1 30mm Now
256Mx72 128Mx8 1333-999 HMT125U7TFR8C-H9 FBGA (78ball) 2 30mm Now
256Mx8 1333-999 HMT325U7BFR8C-H9 FBGA (82ball) 1 30mm Now
1GB 128Mx64 128Mx8 1333-999 HMT112U6TFR8C-H9 FBGA (78ball) 1 30mm Now
128Mx72 128Mx8 1333-999 HMT112U7TFR8C-H9 FBGA (78ball) 1 30mm Now
4GB 512Mx72 256Mx8 1333-999 HMT351U7BFR8A-H9 FBGA (82ball) 2 30mm Now
1.35V 2GB 256Mx72 256Mx8 1333-999 HMT325U7BFR8A-H9 FBGA (82ball) 1 30mm Now
128Mx8 1333-999 HMT125U7TFR8A-H9 FBGA (78ball) 2 30mm Now
1GB 128Mx72 128Mx8 1333-999 HMT112U7TFR8A-H9 FBGA (78ball) 1 30mm Now
VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY
DENSITY ORG.
MODULE
DDR3 SDRAM MODULE(204pin-SODIMM)
4GB 512Mx64 256Mx8 1333-999 HMT351S6BFR8C-H9 FBGA (82ball) 2 30mm Now
128Mx8 1333-999 HMT125S6TFR8C-H9 FBGA (78ball) 2 30mm Now
1.5V 2GB 256Mx64 256Mx8 1333-999 HMT325S6BFR8C-H9 FBGA (82ball) 1 30mm Now
128Mx16 1333-999 HMT325S6BFR6C-H9 FBGA (96ball) 2 30mm Now
1GB 128Mx64 128Mx8 1333-999 HMT112S6TFR8C-H9 FBGA (78ball) 1 30mm Now
64Mx16 1333-999 HMT112S6BFR6C-H9 FBGA (96ball) 2 30mm Now
1.35V 4GB 512Mx64 256Mx8 1333-999 HMT351S6AFR8A-H9 FBGA (82ball) 2 30mm Now
2GB 256Mx64 256Mx8 1333-999 HMT325S6AFR8A-H9 FBGA (82ball) 1 30mm Now
VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY
DENSITY ORG.
MODULE
DDR3 SDRAM MODULE(240pin-RDIMM)
16GB 2Gx72 1Gx4 (DDP) 1333-999 HMT42GR7BMR4C-H9 FBGA (82ball) 4 30mm Now
8GB 1Gx72 512Mx4 1333-999 HMT31GR7BFR4C-H9 FBGA (82ball) 2 30mm Now
256Mx8 1333-999 HMT31GR7BFR8C-H9 FBGA (82ball) 4 30mm Now
256Mx8 1333-999 HMT351R7BFR8C-H9 FBGA (82ball) 2 30mm Now
1.5V 4GB 512Mx72 512Mx4 1333-999 HMT351R7BFR4C-H9 FBGA (82ball) 1 30mm Now
256Mx4 1333-999 HMT151R7TFR4C-H9 FBGA (78ball) 2 30mm Now
256Mx8 1333-999 HMT325R7BFR8C-H9 FBGA (82ball) 1 30mm Now
2GB 256Mx72 256Mx4 1333-999 HMT125R7TFR4C-H9 FBGA (78ball) 1 30mm Now
128Mx8 1333-999 HMT125R7TFR8C-H9 FBGA (78ball) 2 30mm Now
1GB 128Mx72 128Mx8 1333-999 HMT112R7TFR8C-H9 FBGA (78ball) 1 30mm Now
16GB 2Gx72 1Gx4 (DDP) 1333-999 HMT42GR7BMR4A-H9 FBGA (82ball) 4 30mm Q2 ’10
8GB 1Gx72 512Mx4 1333-999 HMT31GR7BFR4A-H9 FBGA (82ball) 2 30mm Now
256Mx8 1333-999 HMT31GR7BFR8A-H9 FBGA (82ball) 4 30mm Now
256Mx8 1333-999 HMT351R7BFR8A-H9 FBGA (82ball) 2 30mm Now
1.35V 4GB 512Mx72 128Mx8 1333-999 HMT151R7TFR8A-H9 FBGA (78ball) 4 30mm Now
256Mx4 1333-999 HMT151R7TFR4A-H9 FBGA (78ball) 2 30mm Now
256Mx8 1333-999 HMT325R7BFR8A-H9 FBGA (82ball) 1 30mm Now
2GB 256Mx72 256Mx4 1333-999 HMT125R7TFR4A-H9 FBGA (78ball) 1 30mm Now
128Mx8 1333-999 HMT125R7TFR8A-H9 FBGA (78ball) 1 30mm Now
1GB 128Mx72 128Mx8 1333-999 HMT112R7TFR8A-H9 FBGA (78ball) 1 30mm Now
VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY
DENSITY ORG.
MODULE
DDR3 SDRAM MODULE(240pin-VLP RDIMM)
8GB 1Gx72 1Gx4(DDP) 1333-999 HMT41GV7BMR4C-H9 FBGA (82ball) 2 18.75mm Now
512Mx8(DDP) 1333-999 HMT41GV7BMR8C-H9 FBGA (82ball) 4 18.75mm Now
4GB 512Mx72 512Mx4(DDP) 1333-999 HMT351V7BMR4C-H9 FBGA (78ball) 2 18.75mm Now
1.5V 256Mx8 1333-999 HMT351V7BFR8C-H9 FBGA (82ball) 2 18.75mm Now
256Mx4 1333-999 HMT125V7TFR4C-H9 FBGA (78ball) 1 18.75mm Now
2GB 256Mx72 128Mx8 1333-999 HMT125V7TFR8C-H9 FBGA (78ball) 2 18.75mm Now
256Mx8 1333-999 HMT325V7BFR8C-H9 FBGA (82ball) 1 18.75mm Now
1GB 128Mx72 128Mx8 1333-999 HMT112V7TFR8C-H9 FBGA (78ball) 1 18.75mm Now
8GB 1Gx72 1Gx4(DDP) 1333-999 HMT41GV7BMR4A-H9 FBGA (82ball) 2 18.75mm Q2 ’10
512Mx8(DDP) 1333-999 HMT41GV7BMR8A-H9 FBGA (82ball) 4 18.75mm Q2 ‘10
4GB 512Mx72 512Mx4(DDP) 1333-999 HMT351V7BMR4A-H9 FBGA (78ball) 2 18.75mm Now
1.35V 256Mx8 1333-999 HMT351V7BFR8A-H9 FBGA (82ball) 2 18.75mm Now
256Mx4 1333-999 HMT125V7TFR4A-H9 FBGA (78ball) 1 18.75mm Now
2GB 256Mx72 128Mx8 1333-999 HMT125V7TFR8A-H9 FBGA (78ball) 2 18.75mm Now
256Mx8 1333-999 HMT325V7BFR8A-H9 FBGA (82ball) 1 18.75mm Now
1GB 128Mx72 128Mx8 1333-999 HMT112V7TFR8A-H9 FBGA (78ball) 1 18.75mm Now
VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY
DENSITY ORG.
MODULE
7
DDR2 SDRAM
DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY
500MHz (2.0ns) H5PS1G63EFR-20L FBGA (84ball) 8Bank, 1.8V / 1.8V Now
1Gb 64Mx16 400MHz (2.5ns) H5PS1G63EFR-25C FBGA (84ball) 8Bank, 1.8V / 1.8V Now
400MHz (2.5ns) HY5PS1G1631CFR-25C FBGA (84ball) 8Bank, 1.8V / 1.8V Now
600MHz (1.6ns) H5PS5162FFR-16C FBGA (84ball) 4Bank, 2.0V / 2.0V Now
500MHz (2.0ns) H5PS5162FFR-20C FBGA (84ball) 4Bank, 2.0V / 2.0V Now
500MHz (2.0ns) H5PS5162FFR-20L FBGA (84ball) 4Bank, 1.8V / 1.8V Now
400MHz (2.5ns) H5PS5162FFR-25C FBGA (84ball) 4Bank, 1.8V / 1.8V Now
512Mb 32Mx16 500MHz (2.0ns) HY5PS121621CFP-2 FBGA (84ball) 4Bank, 2.0V / 2.0V Now
450MHz (2.2ns) HY5PS121621CFP-22 FBGA (84ball) 4Bank, 2.0V / 2.0V Now
400MHz (2.5ns) HY5PS121621CFP-25 FBGA (84ball) 4Bank, 1.8V / 1.8V Now
350MHz (2.8ns) HY5PS121621CFP-28 FBGA (84ball) 4Bank, 1.8V / 1.8V Now
300MHz (3.3ns) HY5PS121621CFP-33 FBGA (84ball) 4Bank, 1.8V / 1.8V Now
DDR3 SDRAM
DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY
1,000MHz (1.0ns) H5TQ2G63BFR-N0C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
2Gb 128Mx16 900MHz (1.1ns) H5TQ2G63BFR-11C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
800MHz (1.2ns) H5TQ2G63BFR-12C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
900MHz (1.1ns) H5TS1G63BFR-11C FBGA (96ball) 8Bank, 1.8V / 1.8V Now
800MHz (1.2ns) H5TS1G63BFR-12C FBGA (96ball) 8Bank, 1.8V / 1.8V Now
800MHz (1.2ns) H5TQ1G63BFR-12C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
700MHz (1.4ns) H5TQ1G63BFR-14C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
1Gb 64Mx16 800MHz (1.2ns) H5TS1G63AFR-12C FBGA (96ball) 8Bank, 1.8V / 1.8V Now
700MHz (1.4ns) H5TS1G63AFR-14C FBGA (96ball) 8Bank, 1.8V / 1.8V Now
600MHz (1.6ns) H5TS1G63AFR-16C FBGA (96ball) 8Bank, 1.8V / 1.8V Now
700MHz(1.4ns) H5TQ1G63AFR-14C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
600MHz (1.6ns) H5TQ1G63AFR-16C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
500MHz (2.0ns) H5TQ1G63AFR-20C FBGA (96ball) 8Bank, 1.5V / 1.5V Now
GDDR5 SDRAM
DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY
6.0Gbps H5GQ2H24MFR-R0C FBGA (170ball) 16Bank, 1.5V / 1.5V Q3 '10
2Gb 64Mx32 5.5Gbps H5GQ2H24MFR-T3C FBGA (170ball) 16Bank, 1.5V / 1.5V Q3 '10
5.0Gbps H5GQ2H24MFR-T2C FBGA (170ball) 16Bank, 1.5V / 1.5V Q3 '10
6.0Gbps H5GQ1H24AFR-R0C FBGA (170ball) 16Bank, TBD Now
5.5Gbps H5GQ1H24AFR-T3C FBGA (170ball) 16Bank, 1.5V /1.5V Now
1Gb 32Mx32 5.0Gbps H5GQ1H24AFR-T2C FBGA (170ball) 16Bank, 1.5V /1.5V Now
4.5Gbps H5GQ1H24AFR-T1C FBGA (170ball) 16Bank, 1.5V / 1.5V Now
4.0Gbps H5GQ1H24AFR-T0C FBGA (170ball) 16Bank, 1.5V / 1.5V Now
3.2Gbps H5GQ1H24AFR-T2L FBGA (170ball) 16Bank, 1.35V / 1.35V Now
GDDR3 SDRAM
DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY
1,200MHz (0.8ns) H5RS1H23MFR-N2C FBGA (136ball) 8banks, 1.9V / 1.9V Now
1Gb 32Mx32 1,000MHz (1.0ns) H5RS1H23MFR-N0C FBGA (136ball) 8banks, 1.9V / 1.9V Now
900MHz (1.1ns) H5RS1H23MFR-11C FBGA (136ball) 8banks, 1.8V / 1.8V Now
700MHz (1.4ns) H5RS1H23MFR-14C FBGA (136ball) 8banks, 1.8V / 1.8V Now
1,300MHz (0.77ns) H5RS5223DFR-N3C FBGA (136ball) 8Bank, 2.05V / 2.05V Now
1,200MHz (0.8ns) H5RS5223DFR-N2C FBGA (136ball) 8Bank, 2.05V / 2.05V Now
1,000MHz (1.0ns) H5RS5223DFR-N0C FBGA (136ball) 8Bank, 2.05V / 2.05V Now
900MHz (1.1ns) H5RS5223DFR-11C FBGA (136ball) 8Bank, 1.8V / 1.8V Now
700MHz (1.4ns) H5RS5223DFR-14C FBGA (136ball) 8Bank, 1.8V / 1.8V Now
512Mb 16Mx32 500MHz (2.0ns) H5RS5223DFR-20C FBGA (136ball) 8Bank, 1.8V / 1.8V Now
1,300MHz (0.77ns) H5RS5223CFR-N3C FBGA (136ball) 8Bank, 2.05V / 2.05V Now
1,200MHz (0.8ns) H5RS5223CFR-N2C FBGA (136ball) 8Bank, 2.05V / 2.05V Now
1,000MHz (1.0ns) H5RS5223CFR-N0C FBGA (136ball) 8Bank, 2.05V / 2.05V Now
900MHz (1.1ns) H5RS5223CFR-11C FBGA (136ball) 8Bank, 1.8V / 1.8V Now
700MHz (1.4ns) H5RS5223CFR-14C FBGA (136ball) 8Bank, 1.8V / 1.8V Now
500MHz (2.0ns) H5RS5223CFR-20C FBGA (136ball) 8Bank, 1.8V / 1.8V Now
700MHz (1.4ns) H5RS5223CFR-14L FBGA (136ball) 8Bank, 1.5V / 1.5V Now
550MHz (1.8ns) H5RS5223CFR-18C FBGA (136ball) 8Bank, 1.5V / 1.5V Now
Graphics Memory
Product Line-up
9
Consumer
Memory
General Description
We now live in the Digital Era. Digital televisions, DVD and Set-Top Box give us rich entertainment, while Car navigation systems
provide comfort and convenience. All of these digital consumer appliances need semiconductor memory for performance
improvement, power savings and size reduction. Hynix has full line-up of DRAM (Dynamic RAM) to meet the needs of a wide range
of consumer applications. Hynix offers a family of SDRAM (Synchronous DRAM) in 128Mb~256Mb densities, packaged in TSOP-II
and FBGA offered at industrial temperature range of -40℃to 85℃and featuring very low power consumption. DDR, DDR2 and
DDR3 SDRAMs (Double Data Rate SDRAMs) are available for high-end consumer applications requiring higher data transfer rates.
In many applications, such as Digital Television and Set-Top-Box, SDR SDRAM has been replaced by DDR, DDR2 and DDR3
SDRAM technologies.
Sometimes, the most important things are not be visible. Although hidden from view, Hynix Consumer memories have been used in
a variety of applications offered by a number of companies to realize a multitude of miracles.
Consumer DRAM Readiness Green Solution
LC (Low Current) DDR2 provides a Green Solution
- Eco-friendly & Low power consumption
10
x16 HY57V281620FTP 5 / 6 / 7 / H Normal / Low 0~70 / -40~85 [℃] TSOP 3.3V Now
128Mb x16 HY5V26FFP 5 / 6 / 7 / H Normal / Low 0~70 / -40~85 [℃] FBGA 3.3V Now
x16 H57V1262GTR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 [℃] TSOP 3.3V Now
x16 H57V1262GFR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 [℃] FBGA 3.3V Now
x8 HY57V56820FTP 6 / H Normal / Low 0~70 / -40~85 [℃] TSOP 3.3V Now
x16 HY57V561620FTP 6 / H Normal / Low 0~70 / -40~85 [℃] TSOP 3.3V Now
x16 HY5V56FFP 6 / H Normal / Low 0~70 / -40~85 [℃] FBGA 3.3V Now
256Mb x32 HY5V52AFP 6 / H Normal / Low 0~70 / -40~85 [℃] FBGA 3.3V Now
x8 H57V2582GTR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 [℃] TSOP 3.3V Now
x16 H57V2562GTR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 [℃] TSOP 3.3V Now
x16 H57V2562GFR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 [℃] FBGA 3.3V Now
x32 H57V2622GMR 60 / 70 / 75 Normal / Low 0~70 / -40~85 [℃] FBGA 3.3V Now
SDR SDRAM
DENSITY ORG. PART NUMBER SPEED POWER OPERATION TEMP. PACKAGE VOLTAGE
AVAILABILITY
512Mb x8 H5PS5182FFR E3 / C4 / Y4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.8V Now
x16 H5PS5162FFR E3 / C4 / Y4 / Y5 / S6 / S5 / G7 Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.8V Now
x8 HY5PS1G831CFP E3 / C4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.8V Now
x8 H5PS1G83EFR E3 / C4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.8V Now
1Gb x16 HY5PS1G1631CFP E3 / C4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.8V Now
x16 H5PS1G63EFR E3 / C4 / Y5 / S6 / S5 / G7 Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.8V Now
x32 H5PS1GC2FMR E3 / C4 / Y5 / S6 Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.8V Now
x8 H5PS2G83AFR E3 / C4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.8V Now
2Gb x16 H5PS2G63EMR Y5 / S6 Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.8V Now
x32 H5PS2GC3FMR Y5 / S6 Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.8V Now
DDR2 SDRAM
DENSITY ORG. PART NUMBER SPEED POWER OPERATION TEMP. PACKAGE VOLTAGE
AVAILABILITY
1Gb x8 H5TQ1G83BFR S5 / S6 / G7 / G8 / H9 / PB Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.5V Now
x16 H5TQ1G63BFR S5 / S6 / G7 / G8 / H9 / PB Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.5V Now
x8 H5TQ2G83AFR S5 / S6 / G7 / G8 / H9 Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.5V Now
2Gb x8 H5TQ2G83BFR S5 / S6 / G7 / G8 / H9 / PB Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.5V Now
x16 H5TQ2G63BFR S5 / S6 / G7 / G8 / H9 / PB Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.5V Now
DDR3 SDRAM
DENSITY ORG. PART NUMBER SPEED POWER OPERATION TEMP. PACKAGE VOLTAGE
AVAILABILITY
64Mb x16 H5DU6462CTR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 [℃] TSOP 2.5V Now
128Mb x16 HY5DU281622FTP 4 / 5 / D43 / D4 / J / H Normal / Low 0~70 / -40~85 [℃] TSOP 2.5V Now
x16 H5DU1262GTR FA / FB / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 [℃] TSOP 2.5V Now
x8 HY5DU568822FTP 4 / D43 / J Normal / Low 0~70 / -40~85 [℃] TSOP 2.5V Now
x16 HY5DU561622FTP 4 / D43 / J Normal / Low 0~70 / -40~85 [℃] TSOP 2.5V Now
x16 HY5DU561622FFP 4 / D43 / J Normal / Low 0~70 / -40~85 [℃] FBGA 2.5V Now
256Mb x8 H5DU2582GTR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 [℃] TSOP 2.5V Now
x16 H5DU2562GFR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 [℃] FBGA 2.5V Now
x8 H5DU2582GTR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 [℃] TSOP 2.5V Now
x16 H5DU2562GFR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 [℃] FBGA 2.5V Now
x8 HY5DU128822DTP D43 / J / K / H / L Normal Power 0~70 / -40~85 [℃] TSOP 2.5V Now
x8 HY5DU12822DFP D43 / J / K / H / L Normal Power 0~70 / -40~85 [℃] FBGA 2.5V Now
x16 HY5DU121622DTP D43 / J / K / H / L Normal Power 0~70 / -40~85 [℃] TSOP 2.5V Now
512Mb x16 HY5DU121622DFP D43 / J / K / H / L Normal Power 0~70 / -40~85 [℃] FBGA 2.5V Now
x8 H5DU5182ETR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 [℃] TSOP 2.5V Now
x8 H5DU5182EFR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 [℃] FBGA 2.5V Now
x16 H5DU5162ETR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 [℃] TSOP 2.5V Now
x16 H5DU5162EFR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 [℃] FBGA 2.5V Now
DDR SDRAM
DENSITY ORG. PART NUMBER SPEED POWER OPERATION TEMP. PACKAGE VOLTAGE
AVAILABILITY
Note : At tOPER 85~95℃, Double refresh rate is required.
Note : At tOPER 85~95℃, Double refresh rate is required.
Consumer Memory
Product Line-up
11
Mobile
Memory
General Description
Hynix Mobile Memory technology unleashes the best mobile experience on the go. As mobile devices get smaller, sleeker, and
lighter than ever, consumers will be able to choose from a wide range of mobile devices to keep them connected, entertained,
informed, and productive. As consumers life styles become more mobile, there is ever increasing demand for connectivity. Mobile
devices will require high performance memories, with very low power consumption for extended battery life. Devices that use Hynix
Mobile Memory enables everything you love on-the-go. Hynix Mobile Memory products offered in small footprint packages have
superior power saving features useful in all handheld devices such as cellular phones, PDAs, MP3 players, etc. Hynix Mobile
Memories are ideal for portable applications which require very low power consumption. Hynix’s Mobile Business Group offers a
broad variety of products enabling our customers to deliver next-generation devices in time to market
Mobile DRAM
Broad Product Line: SDR / DDR, x16 / x32 organizations, 128Mb to 2Gb densities
Diverse Packaging Options: Discrete, KGD (Known Good Die), MCP (Multi Chip Package), PoP (Package on Package)
Small Form Factor Packages: For use in the most space-constrained handheld applications
Low Power Features: Programmable Drive strength, Partial Array Self Refresh, Temperature Compensated Self Refresh
Major Applications: Mobile Phone, PDA, MP3 Player, Digital Still Camera, MID(Mobile Internet Device), PND(Portable Navigation
Device), Personal Media Player (PMP), Handheld Game Console, e-book
LPDDR2 will be the next generation mainstream. Hynix set the standard for LPDDR2 technology along with LPDDR
MCP
Small Form Factor package saves space in Handheld Devices
High Capacity Data Storage, High Speed, with Low Power Consumption
In-house manufacturing provides cost efficient solutions in a timely manner
Major Application - Mobile Phone, Smartphone, PDA Phone, Digital Still Camera, MID (Mobile Internet Device), Wireless
LAN Card, Handheld Game Console, Netbook
e-NAND
e-NAND : Combination of NAND Flash and the Flash Controller with MMC interface, in a single package
Simple read / write memory using standard MMC 4.3 / 4.4 protocol interface.
No additional firmware for NAND management required
Controller includes NAND software such as FTL, ECC, FAT-16/32
MCPs in Mobile Application MCP Line-up
12
Mobile SDR
DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY
64M x 16 166MHz (6.0ns) H55S2G62MFP-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
133MHz (7.5ns) H55S2G62MFP-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
2Gb 32M x 32 166MHz (6.0ns) H55S2G22MFP-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
133MHz (7.5ns) H55S2G22MFP-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
32M x 32 166MHz (6.0ns) H55S2G32MFP-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
(reduced page size) 133MHz (7.5ns) H55S2G32MFP-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
166MHz (6.0ns) H55S1G62AFR-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
64M x 16 133MHz (7.5ns) H55S1G62AFR-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
166MHz (6.0ns) H55S1G62MFP-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
133MHz (7.5ns) H55S1G62MFP-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
166MHz (6.0ns) H55S1G22AFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
1Gb 32M x 32 133MHz (7.5ns) H55S1G22AFR-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
166MHz (6.0ns) H55S1G22MFP-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
133MHz (7.5ns) H55S1G22MFP-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
166MHz (6.0ns) H55S1G32AFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
32M x 32 133MHz (7.5ns) H55S1G32AFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
(reduced page size) 166MHz (6.0ns) H55S1G32MFP-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
133MHz (7.5ns) H55S1G32MFP-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
166MHz (6.0ns) H55S5162EFR-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
32M x 16 133MHz (7.5ns) H55S5162EFR-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
166MHz (6.0ns) H55S5162DFR-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
512M 133MHz (7.5ns) H55S5162DFR-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
166MHz (6.0ns) H55S5122EFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
16M x 32 133MHz (7.5ns) H55S5122EFR-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
166MHz (6.0ns) H55S5122DFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
133MHz (7.5ns) H55S5122DFR-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
16M x 16 166MHz (6.0ns) H55S2562JFR-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
256Mb 133MHz (7.5ns) H55S2562JFR-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
8M x 32 166MHz (6.0ns) H55S2622JFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
133MHz (7.5ns) H55S2622JFR-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
8M x 16 166MHz (6.0ns) H55S1262EFP-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
128Mb 133MHz (7.5ns) H55S1262EFP-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now
4M x 32 166MHz (6.0ns) H55S1222EFP-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
133MHz (7.5ns) H55S1222EFP-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
Mobile DDR
DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY
64M x 16 200MHz (5.0ns) H5MS2G62MFR-EBM FBGA (60ball) 4Bank, 1.8V / 1.8V Now
166MHz (6.0ns) H5MS2G62MFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
2Gb 32M x 32 200MHz (5.0ns) H5MS2G22MFR-EBM FBGA (90ball) 4Bank, 1.8V / 1.8V Now
166MHz (6.0ns) H5MS2G22MFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
32M x 32 200MHz (5.0ns) H5MS2G32MFR-EBM FBGA (90ball) 4Bank, 1.8V / 1.8V Now
(reduced page size) 166MHz (6.0ns) H5MS2G32MFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
200MHz (5.0ns) H5MS1G62AFR-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
166MHz (6.0ns) H5MS1G62AFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
64M x 16 200MHz (5.0ns) H5MS1G62MFP-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
166MHz (6.0ns) H5MS1G62MFP-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
133MHz (7.5ns) H5MS1G62MFP-K3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
200MHz (5.0ns) H5MS1G22AFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
166MHz (6.0ns) H5MS1G22AFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
1Gb 32M x 32 200MHz (5.0ns) H5MS1G22MFP-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
166MHz (6.0ns) H5MS1G22MFP-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
133MHz (7.5ns) H5MS1G22MFP-K3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
200MHz (5.0ns) H5MS1G32AFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
32M x 32 166MHz (6.0ns) H5MS1G32AFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
200MHz (5.0ns) H5MS1G32MFP-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
(reduced page size) 166MHz (6.0ns) H5MS1G32MFP-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
133MHz (7.5ns) H5MS1G32MFP-K3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
200MHz (5.0ns) H5MS5162EFR-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
166MHz (6.0ns) H5MS5162EFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
32M x 16 200MHz (5.0ns) H5MS5162DFR-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
166MHz (6.0ns) H5MS5162DFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
512Mb 133MHz (7.5ns) H5MS5162DFR-K3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
200MHz (5.0ns) H5MS5122EFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
166MHz (6.0ns) H5MS5122EFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
16M x 32 200MHz (5.0ns) H5MS5122DFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
166MHz (6.0ns) H5MS5122DFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
133MHz (7.5ns) H5MS5122DFR-K3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
200MHz (5.0ns) H5MS2562JFR-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
16M x 16 166MHz (6.0ns) H5MS2562JFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
256Mb 133MHz (7.5ns) H5MS2562JFR-K3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
200MHz (5.0ns) H5MS2622JFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
8M x 32 166MHz (6.0ns) H5MS2622JFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
133MHz (7.5ns) H5MS2622JFR-K3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
8M x 16 166MHz (6.0ns) H5MS1262EFP-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
128Mb 133MHz (7.5ns) H5MS1262EFP-K3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now
4M x 32 166MHz (6.0ns) H5MS1222EFP-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
133MHz (7.5ns) H5MS1222EFP-K3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now
* All SDRAM is Available For Lead Free or Lead & Halogen Free
* All SDRAM is Available For Lead Free or Lead & Halogen Free
Mobile Memory
Product Line-up
13
Features F48 16G MLC F41 32G MLC F32 32G MLC
Voltage 3.3V 3.3V 3.3V
Organization X8 X8 x8
Page & Block size (P/B) 4KB+128B / 512KB 4KB+224B / 512KB 8KB+448B / 2MB
tRC(min) / tWC (min) 25ns 25ns 25ns
tR (max) 60us 60us 200us
Program time (typ.) 800us 1000us 1600us
Erase time (typ.) 2.5ms 3ms 2.5ms
Operating current MONO / DDP 15mA(typ.) ~ 30mA(max) 30mA(typ.) ~ 50mA(max) 30mA(typ.) ~ 50mA(max)
QDP / DSP 20mA(typ.) ~ 40mA(max) 30mA(typ.) ~ 50mA(max) 30mA(typ.) ~ 60mA(max)
Copyback O with Data out O with Data out O with Data out
Function Cache Program - O O
Cache Read - O O
2 Plane Op. Write, Read & Erase Write, Read & Erase Write, Read & Erase
Enhanced Data Out O O O
Special / Function OTP O O O
Unique ID O O O
Endurance / Package
E/W Cycles / Retention 5K / 10 years 5K / 10 years 3K / 10 years (TBD)
NOP 1 1 1
Package TSOP / VLGA / COP VLGA VLGA / TSOP
NAND Flash
Memory
General Description
Hynix provides a broad range of NAND Flash products density from 128Mb to 256Gb with various types of packaging (TSOP, VLGA
and FBGA). Due to the proliferation of digital content, NAND Flash memory products are used in a wide variety of applications such
as MP3, PMP, Digital camera, Camcorder, Memory card, USB flash drive and other consumer electronics such as Game console,
Navigation. Currently, Hynix NAND Flash Memory is being widely adopted in the mobile handset applications and we are also
developing PC storage solutions based on the NAND Flash chips. To meet the growing demand for high capacity and improved
performance in mobile applications, Hynix is offering HiFFS (Flash File System) software with eHiFFS system that enhances NAND
chip performance and reliability.
NAND Flash Key Features
NAND Flash Applications Hynix NAND Flash
14
Software Support
Hynix SSD
SSD (Solid State Drive)
SSD is one of the fastest growing NAND applications in the world.
Because of its strengths - Speed, Performance, Reliability, and
Power Consumption - many computing devices such as MID, Net
Book, Notebook, Server System, etc have replaced conventional
hard drives with SSD. Hynix offers SSM (Solid State Module) and
SSD for mobile and personal computing devices.
Features Solid State Module Solid State Drive (2.5”, 1.8”)
Standard ATA / IDE Bus Interface SATA 3.0Gbps
Capacities 16GB, 32GB, 64GB 128GB, 256GB
Dimension 54×39×4mm 1.8” : 52.8×77×5mm
2.5” : 69.9×100×7mm
Sustained Performance Read: 100MB/s Read: 200MB/s
- 128KB, MAX Write: 80MB/s Write: 140MB/s
Random Performance Read: 12117 IOPS (48MB/s) Read: 12500 IOPS (50MB/s)
- 4KB, MAX Write: 263 IOPS (1.1MB/s) Write: 4000 IOPS (16MB/s)
Power Consumption Active: 0.6W Active: 2.0W
Stand-by: 0.35W Stand-by: 0.35W
Voltage 5.0V (3.3V) 5.0V (2.5”) / 3.3V (1.8”)
Temperature Range 0℃to 70℃for Operating 0℃to 70℃for Operating
-55℃to 90℃for Storage -55℃to 95℃for Storage
MTBF 1,000,000 Hrs
BER 1 error in 1014 bits transferred
HiFFS Software
HiFFS is a Flash file system solution for mobile applications. HiFFS is the essential system software for electronic devices which has
Flash memory storage such as mobile phones, PDAs, MP3 players, PMPs, digital TVs, and digital camcorders.
Features
Flash memory file system solution for mobile embedded system
Higher performance and reliability
Fully compatible with FAT 12 / 16 / 32 file system standards
Journaling error recovery mechanism
Support various Nand Flash memory types such as small block,
large block, MLC and SLC and TLC.
Efficient bad block management and wear-leveling
Support UMS(USB Mass Storage) and external Flash memory cards
Higher read/write performance
Fast booting
Support various operating systems such as WinCE, Linux,
Non-OS, Windows Mobile
SSD Key Features
15
HY27US08281A 128Mb 90nm 16KB Mono 3.3V / x8 TSOP/ USOP Now
HY27US08561A 256Mb 90nm 16KB Mono 3.3V / x8 TSOP / USOP / FBGA Now
HY27US08121B 512Mb 70nm 16KB Mono 3.3V / x8 TSOP / USOP / FBGA Now
H27U518S2C 512Mb 57nm 16KB Mono 3.3V / x8 TSOP Now
HY27US081G1M 1Gb 70nm 16KB Mono 3.3V / x8 USOP Now
HY27US081G1A 1Gb 57nm 16KB Mono 3.3V / x8 TSOP Now
HY27UF081G2A 1Gb 70nm 128KB Mono 3.3V / x8 TSOP / USOP / FBGA Now
HY27US081G2A 1Gb 70nm 128KB Mono 1.8V / x8 FBGA Now
H27U1G8F2B 1Gb 48nm 128KB Mono 3.3V / x8 TSOP, FBGA Now
H27U1G8F2B 1Gb 48nm 128KB Mono 1.8V / x8 FBGA Now
HY27UF082G2A 2Gb 70nm 128KB Mono 3.3V / x8 TSOP / LGA Now
HY27UF082G2B 2Gb 57nm 128KB Mono 3.3V / x8 TSOP, FBGA Now
HY27UF084G2B 4Gb 57nm 128KB Mono 3.3V / x8 TSOP Now
HY27UG088G5(D)B 8Gb 57nm 128KB DDP 3.3V / x8 TSOP / LGA Now 2CE / Dual CH.
HY27UH08AG5B 16Gb 57nm 128KB QDP 3.3V / x8 TSOP Now 2CE
NAND Flash SLC COMPONENT
PRODUCT DENSITY TECH. BLOCK SIZE STACK VCC/ORG PACKAGE AVAILABILITY REMARK
H26M01002MAR 512MB 57nm 4Gb 1 3.3V / x8 MMC 4.2 Now
H26M11002AAR 1GB 57nm 8Gb 1 3.3V / x8 MMC 4.2 Now
H26M11001BAR 1GB 48nm 8Gb 1 3.3V / x8 MMC 4.3 Now
H26M21002BAR 2GB 48nm 16Gb 1 3.3V / x8 MMC 4.2 Now
H26M21001CAR 2GB 41nm 16Gb 1 3.3V / x8 MMC 4.3 Now
H26M32002BAR 4GB 48nm 16Gb 2 3.3V / x8 MMC 4.2 Now
H26M32001CAR 4GB 41nm 16Gb 2 3.3V / x8 MMC 4.3 Now
H26M44002AAR 8GB 48nm 16Gb 4 3.3V / x8 MMC 4.2 Now
H26M42001BAR 8GB 41nm 32Gb 2 3.3V / x8 MMC 4.3 Now
H26M54001AJR 16GB 41nm 32Gb 4 3.3V / x8 MMC 4.3 Now
H26M68001MJR 32GB 41nm 32Gb 8 3.3V / x8 MMC 4.3 Now
e-NAND COMPONENT
PRODUCT DENSITY VCC/ORG VERSION AVAILABILITY REMARK
H2EUCG8N11YR-C 64Gb 48nm 768KB (192 Block) DDP 3.3V / x8 VLGA EOL Emulated NAND
H2EUDG8P11XR-C 128Gb 48nm 768KB (192 Block) QDP 3.3V / x8 LLGA EOL Emulated NAND
H2EUAG8M2MYR-C 16Gb 41nm 768KB (192 Block) SDP 3.3V / x8 VLGA TBD Emulated NAND
NAND Flash TLC COMPONENT
PRODUCT DENSITY TECH. BLOCK SIZE STACK VCC/ORG PACKAGE AVAILABILITY REMARK
HY27UT084G2A 4Gb 57nm 256KB Mono 3.3V / x8 TSOP Now
HY27UT088G2A 8Gb 57nm 256KB Mono 3.3V / x8 TSOP Now
H27U8G8T2B 8Gb 48nm 512KB Mono 3.3V / x8 TSOP Now
HY27UU08AG5A 6Gb 57nm 256KB DDP 3.3V / x8 TSOP Now 2CE
H27UAG8T2M 16Gb 48nm 512KB (4KB Page) Mono 3.3V / x8 TSOP / VLGA Now
H27UAG8T2A 16Gb 41nm 512KB (4KB Page) Mono 3.3V / x8 TSOP Now
HY27UW08CGFA 64Gb 57nm 256KB DSP 3.3V / x8 TSOP DSP Now 4CE
HY27UV08BG5A 32Gb 57nm 256KB QDP 3.3V / x8 TSOP Now 2CE
H27UBG8U5M 32Gb 48nm 512KB (4KB Page) DDP 3.3V / x8 TSOP Now 2CE
H27UBG8U5A 32Gb 41nm 512KB (4KB Page) DDP 3.3V / x8 TSOP Now
H27UBG8T2M 32Gb 41nm 512KB (4KB Page) Mono 3.3V / x8 VLGA Now
H27UBG8T2A 32Gb 32nm 2MB (8KB Page) SDP 3.3V / x8 TSOP / VLGA Now
H27UCG8V5M 64Gb 48nm 512KB (4KB Page) QDP 3.3V / x8 TSOP / VLGA Now 2CE
H27UCG8VFA 64Gb 41nm 512KB (4KB Page) QDP 3.3V / x8 TSOP Now
H27UCG8UDM 64Gb 41nm 512KB (4KB Page) DDP 3.3V / x8 VLGA Now Dual CH.
H27UCG8UDA 64Gb 32nm 2MB (8KB Page) DDP 3.3V / x8 TSOP / VLGA 2Q'10 Dual CH. LGA
H27UDG8WFM 128Gb 48nm 512KB (4KB Page) ODP 3.3V / x8 LSOP Now 4CE
H27UDG8WFMTR-BC 128Gb 48nm 512KB (4KB Page) DSP 3.3V / x8 TSOP DSP Now 4CE
H27UDG8YFMXR-BC 128Gb 48nm 512KB (4KB Page) ODP 3.3V / x8 LLGA Now 4CE
H27UDG8VEM 128Gb 41nm 512KB (4KB Page) QDP 3.3V / x8 VLGA Now 4CE, Dual CH.
H27UDG8VEA 128Gb 32nm 2MB (8KB Page) QDP 3.3V / x8 TSOP / VLGA 2Q'10 Dual CH. LGA
H27UEG8YEM 256Gb 41nm 512KB (4KB Page) ODP 3.3V / x8 LLGA Now 4CE, Dual CH.
H27UEG8YEA 256Gb 32nm 2MB (8KB Page) ODP 3.3V / x8 TSOP / VLGA 2Q'10 Dual CH. LGA
NAND Flash MLC COMPONENT
PRODUCT DENSITY TECH. BLOCK SIZE STACK VCC/ORG PACKAGE AVAILABILITY REMARK
TECH. DENSITY STACK
BASE COMPONENT
H24U1GTM3ARH 1GB 48nm 8Gb 1 3.3V / x4 Class-4 Now
H24U2GTM1BRH 2GB 41nm 16Gb 1 3.3V / x4 Class-4 Now
H24U4GUM1ARH 4GB 41nm 16Gb 2 3.3V / x4 Class-6 Now
H24U8GVM1MRH 8GB 41nm 16Gb 4 3.3V / x4 Class-6 Now
H24UAGYM1MRH 16GB 41nm 16Gb 4 3.3V / x4 Class-6 Now
uSD COMPONENT
PRODUCT DENSITY VCC/ORG VERSION AVAILABILITY REMARK
TECH. DENSITY STACK
BASE COMPONENT
NAND Flash
Product Line-up
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