BC856AWT1 - ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

October, 2001 – Rev. 2 1Publication Order Number:

BC856AWT1/D

BC856AWT1 Series,

BC857BWT1 Series,

BC858AWT1 Series

Preferred Devices

General Purpose

Transistors

PNP Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT–323/SC–70 which is

designed for low power surface mount applications.

•Device Marking:

BC856AWT1 = 3A

BC856BWT1 = 3B

BC857BWT1 = 3F

BC857CWT1 = 3G

BC858AWT1 = 3J

BC858BWT1 = 3K

MAXIMUM RATINGS

Rating Symbol BC856 BC857 BC858 Unit

Collector–Emitter Voltage VCEO –65 –45 –30 V

Collector–Base Voltage VCBO –80 –50 –30 V

Emitter–Base V oltage VEBO –5.0 –5.0 –5.0 V

Collector Current –

Continuous IC–100 –100 –100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation

FR–5 Board (1)

TA = 25°C

PD150 mW

Thermal Resistance,

Junction to Ambient RJA 833 °C/W

Junction and Storage

Temperature Range TJ, Tstg –55 to +150 °C

1. FR–5 = 1.0 x 0.75 x 0.062 in

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Device Package Shipping

ORDERING INFORMATION

BC856BWT1 SOT–323

SOT–323/SC–70

CASE 419

STYLE 3

3000 Units/Reel

DEVICE MARKING

Preferred devices are recommended choices for future use

and best overall value.

BC857BWT1 SOT–323 3000 Units/Reel

BC858AWT1 SOT–323 3000 Units/Reel

See Device

Marking Listing

BC856AWT1 SOT–323 3000 Units/Reel

COLLECTOR

BASE

EMITTER

BC858BWT1 SOT–323 3000 Units/Reel

BC857CWT1 SOT–323 3000 Units/Reel

BC856AWT1 Series, BC857BWT1 Series, BC858AWT1 Series

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage BC856 Series

(IC = –10 mA) BC857 Series

BC858 Series

V(BR)CEO –65

–45

–30

–

Collector–Emitter Breakdown Voltage BC856 Series

(IC = –10 µA, VEB = 0) BC857B Only

BC858 Series

V(BR)CES –80

–50

–30

–

Collector–Base Breakdown Voltage BC856 Series

(IC = –10 A) BC857 Series

BC858 Series

V(BR)CBO –80

–50

–30

–

Emitter–Base Breakdown Voltage BC856 Series

(IE = –1.0 A) BC857 Series

BC858 Series

V(BR)EBO –5.0

–5.0

–

Collector Cutoff Current (VCB = –30 V)

Collector Cutoff Current (VCB = –30 V, TA = 150°C) ICBO –

––

––15

–4.0 nA

µA

ON CHARACTERISTICS

DC Current Gain BC856A, BC585A

(IC = –10 µA, VCE = –5.0 V) BC856B, BC857B, BC858B

BC857C

(IC = –2.0 mA, VCE = –5.0 V) BC856A, BC858A

BC856B, BC857B, BC858B

BC857C

hFE –

–

125

220

420

150

270

180

290

520

–

250

475

800

–

Collector–Emitter Saturation Voltage

(IC = –10 mA, IB = –0.5 mA)

(IC = –100 mA, IB = –5.0 mA)

VCE(sat) –

––

––0.3

–0.65

Base–Emitter Saturation Voltage

(IC = –10 mA, IB = –0.5 mA)

(IC = –100 mA, IB = –5.0 mA)

VBE(sat) –

––0.7

–0.9 –

–

Base–Emitter On Voltage

(IC = –2.0 mA, VCE = –5.0 V)

(IC = –10 mA, VCE = –5.0 V)

VBE(on) –0.6

––

––0.75

–0.82

SMALL–SIGNAL CHARACTERISTICS

Current–Gain – Bandwidth Product

(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz) fT100 – – MHz

Output Capacitance

(VCB = –10 V, f = 1.0 MHz) Cob – – 4.5 pF

Noise Figure

(IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ,

f = 1.0 kHz, BW = 200 Hz)

NF – – 10 dB

BC856AWT1 Series, BC857BWT1 Series, BC858AWT1 Series

http://onsemi.com

BC857/BC858

Figure 1. Normalized DC Current Gain

IC, COLLECTOR CURRENT (mAdc)

2.0

Figure 2. “Saturation” and “On” Voltages

IC, COLLECTOR CURRENT (mAdc)

-0.2

0.2

Figure 3. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 4. Base–Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

-0.6

-0.7

-0.8

-0.9

-1.0

-0.5

-0.2

-0.4

-0.1

-0.3

1.6

1.2

2.0

2.8

2.4

-1.2

-1.6

-2.0

-0.02 -1.0 -10

0-20

-0.1

-0.4

-0.8

hFE, NORMALIZED DC CURRENT GAIN

V, VOLTAGE (VOLTS)

VCE, COLLECTOR-EMITTER VOLTAGE (V)

VB, TEMPERATURE COEFFICIENT (mV/ C)°θ

1.5

1.0

0.7

0.5

0.3

-0.2 -10 -100

-1.0

TA = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = -10 V

VCE = -10 V

TA = 25°C

-55°C to +125°C

IC = -100 mA

IC = -20 mA

-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100

IC = -200 mAIC = -50 mAIC =

-10 mA

Figure 5. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Current–Gain – Bandwidth Product

IC, COLLECTOR CURRENT (mAdc)

-0.4

1.0

100

200

300

400

7.0

5.0

3.0

2.0

-0.5

C, CAPACITANCE (pF)

f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)

TA = 25°C

Cob

Cib

-0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40

150

-1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50

VCE = -10 V

TA = 25°C

1.0

BC856AWT1 Series, BC857BWT1 Series, BC858AWT1 Series

http://onsemi.com

BC856

Figure 7. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 8. “On” Voltage

IC, COLLECTOR CURRENT (mA)

-0.8

-1.0

-0.6

-0.2

-0.4

1.0

2.0

-0.1 -1.0 -10 -200

-0.2

0.2

0.5

-0.2 -1.0 -10 -200

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = -5.0 V

Figure 9. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 10. Base–Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

-1.0

-1.2

-1.6

-2.0

-0.02 -1.0 -10

0-20

-0.1

-0.4

-0.8

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

VB, TEMPERATURE COEFFICIENT (mV/ C)°θ

-0.2 -2.0 -10 -200

-1.0

TJ = 25°C

IC =

-10 mA

hFE, DC CURRENT GAIN (NORMALIZED)

V, VOLTAGE (VOLTS)

VCE = -5.0 V

TA = 25°C

0-0.5 -2.0 -5.0 -20 -50 -100

-0.05 -0.2 -0.5 -2.0 -5.0

-100 mA

-20 mA

-1.4

-1.8

-2.2

-2.6

-3.0

-0.5 -5.0 -20 -50 -100

-55°C to 125°C

θVB for VBE

-2.0 -5.0 -20 -50 -100

Figure 11. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 12. Current–Gain – Bandwidth Product

IC, COLLECTOR CURRENT (mA)

-0.1 -0.2 -1.0 -50

2.0 -2.0 -10 -100

100

200

500

6.0

4.0

-1.0 -10 -100

VCE = -5.0 V

C, CAPACITANCE (pF)

f, CURRENT-GAIN - BANDWIDTH PRODUCT

-0.5 -5.0 -20

TJ = 25°C

Cob

Cib

8.0

-50 mA -200 mA

BC856AWT1 Series, BC857BWT1 Series, BC858AWT1 Series

http://onsemi.com

Figure 13. Thermal Response

t, TIME (ms)

1.0

r(t), TRANSIENT THERMAL

2.0 5.01.00.50.20.1

RESISTANCE (NORMALIZED)

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01

20 5010 200 500100 1.0k 2.0k 5.0k 10k

Figure 14. Active Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (V)

-200

-1.0

IC, COLLECTOR CURRENT (mA)

TA = 25°C

D = 0.5

0.2

0.1 0.05 SINGLE PULSE

SINGLE PULSE

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

3 ms

TJ = 25°C

ZθJC(t) = r(t) RθJC

RθJC = 83.3°C/W MAX

ZθJA(t) = r(t) RθJA

RθJA = 200°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) RθJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

-100

-50

-10

-5.0

-2.0

-5.0 -10 -30 -45 -65 -100

1 s

BC858

BC857

BC856

The safe operating area curves indicate I C–VCE lim-

its of the transistor that must be observed for reliable op-

eration. Collector load lines for specific circuits must fall

below the limits indicated by the applicable curve.

The data of Figure 14 is based upon TJ(pk) = 150°C; TC

or TA is variable depending upon conditions. Pulse curves

are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C.

TJ(pk) may be calculated from the data in Figure 13. At

high case or ambient temperatures, thermal limitations

will reduce the power that can be handled to values less

than the limitations imposed by the secondary breakdown.

BC856AWT1 Series, BC857BWT1 Series, BC858AWT1 Series

http://onsemi.com

PD = TJ(max) – TA

RθJA

PD = 150°C – 25°C

0.625°C/W = 200 milliwatts

•The soldering temperature and time should not exceed

260°C for more than 10 seconds.

•When shifting from preheating to soldering, the

maximum temperature gradient should be 5°C or less.

•After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and

result in latent failure due to mechanical stress.

•Mechanical stress or shock should not be applied dur-

ing cooling

* Soldering a device without preheating can cause exces-

sive thermal shock and stress which can result in damage

to the device.

INFORMATION FOR USING THE SC–70/SOT–323 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total

design. The footprint for the semiconductor packages must

be the correct size to insure proper solder connection

SC–70/SOT–323 POWER DISSIPATION

The power dissipation of the SC–70/SOT–323 is a func-

tion of the pad size. This can vary from the minimum pad

size for soldering to the pad size given for maximum power

dissipation. Power dissipation for a surface mount device

is determined by TJ(max), the maximum rated junction tem-

perature of the die, RθJA, the thermal resistance from the

device junction to ambient; and the operating temperature,

TA. Using the values provided on the data sheet, PD can be

calculated as follows.

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values into

the equation for an ambient temperature TA of 25°C, one

can calculate the power dissipation of the device which in

this case is 200 milliwatts.

The 0.625°C/W assumes the use of the recommended

footprint on a glass epoxy printed circuit board to achieve

a power dissipation of 200 milliwatts. Another alternative

would be to use a ceramic substrate or an aluminum core

board such as Thermal Clad. Using a board material such

as Thermal Clad, a higher power dissipation of 300 milli-

watts can be achieved using the same footprint.

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated

to a high temperature, failure to complete soldering within

a short time could result in device failure. Therefore, the

following items should always be observed in order to

minimize the thermal stress to which the devices are

subjected.

•Always preheat the device.

•The delta temperature between the preheat and

soldering should be 100°C or less.*

•When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering

method, the difference should be a maximum of 10°C.

inches

0.035

0.9

0.075

0.7

1.9

0.028

0.65

0.025

0.65

0.025

BC856AWT1 Series, BC857BWT1 Series, BC858AWT1 Series

http://onsemi.com

STEP 1

PREHEAT

ZONE 1

RAMP"

STEP 2

VENT

SOAK"

STEP 3

HEATING

ZONES 2 & 5

RAMP"

STEP 4

HEATING

ZONES 3 & 6

SOAK"

STEP 5

HEATING

ZONES 4 & 7

SPIKE"

STEP 6

VENT

STEP 7

COOLING

200°C

150°C

100°C

50°C

TIME (3 TO 7 MINUTES TOTAL) TMAX

SOLDER IS LIQUID FOR

40 TO 80 SECONDS

(DEPENDING ON

MASS OF ASSEMBLY)

205° TO 219°C

PEAK AT

SOLDER JOINT

DESIRED CURVE FOR LOW

MASS ASSEMBLIES

100°C

150°C

160°C

140°C

Figure 15. Typical Solder Heating Profile

DESIRED CURVE FOR HIGH

MASS ASSEMBLIES

170°C

For any given circuit board, there will be a group of

control settings that will give the desired heat pattern. The

operator must set temperatures for several heating zones,

and a figure for belt speed. Taken together, these control

settings make up a heating “profile” for that particular

circuit board. On machines controlled by a computer, the

computer remembers these profiles from one operating

session t o the next. Figure 7 shows a typical heating profile

for use when soldering a surface mount device to a printed

circuit board. This profile will vary among soldering

systems but it is a good starting point. Factors that can

affect the profile include the type of soldering system in

use, density and types of components on the board, type of

solder used, and the type of board or substrate material

being used. This profile shows temperature versus time.

SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a printed

circuit board, solder paste must be applied to the pads. A

solder stencil is required to screen the optimum amount of

solder paste onto the footprint. The stencil is made of brass

or stainless steel with a typical thickness of 0.008 inches.

The stencil opening size for the surface mounted package

should be the same as the pad size on the printed circuit

board, i.e., a 1:1 registration.

TYPICAL SOLDER HEATING PROFILE

The line on the graph shows the actual temperature that

might be experienced on the surface of a test board at or

near a central solder joint. The two profiles are based on a

high density and a low density board. The Vitronics

SMD310 convection/infrared reflow soldering system was

used to generate this profile. The type of solder used was

62/36/2 Tin Lead Silver with a melting point between

177–189°C. When this type of furnace is used for solder

reflow work, the circuit boards and solder joints tend to

heat first. The components on the board are then heated by

conduction. The circuit board, because it has a lar ge surface

area, absorbs the thermal energy more efficiently, then

distributes this energy to the components. Because of this

effect, the main body of a component may be up to 30

degrees cooler than the adjacent solder joints.

BC856AWT1 Series, BC857BWT1 Series, BC858AWT1 Series

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PACKAGE DIMENSIONS

SOT–323/SC–70

CASE 419–02

ISSUE G

STYLE 3:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

CRN

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.071 0.087 1.80 2.20

B0.045 0.053 1.15 1.35

C0.035 0.049 0.90 1.25

D0.012 0.016 0.30 0.40

G0.047 0.055 1.20 1.40

H0.000 0.004 0.00 0.10

J0.004 0.010 0.10 0.25

K0.017 REF 0.425 REF

L0.026 BSC 0.650 BSC

N0.028 REF 0.700 REF

R0.031 0.039 0.80 1.00

S0.079 0.087 2.00 2.20

V0.012 0.016 0.30 0.40

0.05 (0.002)

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,

including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or

death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold

SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable

attorney fees arising out of, directly or indirectly , any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim

alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

JAPAN: ON Semiconductor, Japan Customer Focus Center

4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2700

Email: r14525@onsemi.com

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local

Sales Representative.

BC856AWT1/D

Thermal Clad is a trademark of the Bergquist Company.

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