MJE13002
NPN Silicon
Plastic-Encapsulate
Transistor
Features
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(I
C=1.0mAdc, IB=0)
400 Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(I
C=100uAdc, IE=0)
600 Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(I
E=100uAdc, IC=0)
6.0 Vdc
ICBO Collector Cutoff Current
(VCB=600Vdc, IE=0)
100 uAdc
IEBO Emitter Cutoff Current
(VEB=6.0Vdc, IC=0)
100 uAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain
(I
C=100mAdc, VCE=10Vdc) 8.0 60
hFE(2) DC Current Gain
(I
C=200mAdc, VCE=10Vdc) 9.0 40
hFE(3) DC Current Gain
(I
C=10mAdc, VCE=10Vdc) 6.0
VCE(sat) Collector-Emitter Saturation Voltage
(I
C=200mAdc, I
B=40mAdc) 0.8 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(I
C=200mAdc, I
B=40mAdc) 1.1 Vdc
SMALL-SIGNAL CHARACTERISTICS
fTTransistor Frequency
(I
C=100mAdc, VCE=10Vdc, f=1.0MHz) 5.0 MHz
tFFall Time 0.5 uS
tSStorage Time
VCC=100V,IC=1.0A,
IB1=IB2=0.2A 2.5 uS
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: B 2013/01/01
TM
Micro Commercial Components
www.mccsemi.com
1 of 2
0.291 0.3077.40 7.80
0.417 0.433 10.60 11.00
0.602 0.618 15.30 15.70
4 1 3.90 4.10
0.118 0.126 3.00 3.20
0.026 0.034 0.66 0.86
0.046 0.054 1.17 1.37
0.090TYP 2.290TYP
0.098 0.114 2.50 2.90
D
B
N
A
C
E
F
G
Q
K
M
N 0.043 0.059 1.10 1.50
Q 0.018 0.024 0.45 0.60
L
JPIN 1. EMITTER
PIN 2. COLLECTOR
PIN 3. BASE
3 2 1
L 0.083 0.091 2.10 2.30
M 0.000 0.012 0.00 0.30
DIMENSIONS
• Capable of 1.25Watts of Power Dissipation.
• Collector-current 1.0A
• Collector-base Voltage 600V
• Operating and storage junction temperature range: -55OC to +150OC
• Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.
Halogen free available upon request by adding suffix "-HF"
•