[TENTATIVE] LOW-VOLTAGE HIGH-PRECISION VOLTAGE DETECTOR S-808 Series The S-808 Series is a high-precision voltage detector developed using CMOS process. The detection voltage is fixed internally, with an accuracy of +2.0%. Two output types, Nch open-drain and CMOS output, are available. @ Features HM Applications * Ultra-low current consumption - Battery checker 1.3 wAtyp. (V,=1.5 V) - Power failure detector * High-precision detection voltage +2. 0% "Reset for microcomputer * Low operating voltage 0.7 to 5.0 V Hysteresis characteristics 5% typ. M Pin Assignment Detection voltage 0.8 to 1.4 V (0. 1V step) SC-82AB Nch open-drain active low and CMOS active low output Top view * $C-82AB ultra-smal! package 4 5 1 OUT 2 Vyp 3 NC EW 4 Vos 1 2 Figure 1 @ Block Diagram (1) Neh open-drain active low output (2) CMOS active low output So *Parasitic diode Figure 2 Seiko Instruments Inc. 1| Soo enor eee LOW-VOLTAGE HIGH-PRECISION VOLTAGE DETECTOR { TEN TATIVE] S-808 Series a Selection Guide S80808 AN NP EVY T2 LH Directions of the IC for taping specifications Abbreviation Package type (SC-82AB) Output type Detection voltage rank Table 1 Detection voltage range (V) Hysteresis width Nch Open Drain (Low) CMOS Output (Low) Vis typ. (Vv) 0. 8V+2. 0% 0. 034 S-80808ANNP-E7-T2 $~8080BALNP-E5Y-T2 0. 9V+2. 0% 0.044 S-80809ANNP-E7Z-T2 S-80809ALNP-E2-T2 1.OV#2. 0% 0. 054 S-80810ANNP-E70-T2 $-80810ALNP-ES50-T2 1.1V2. 0% 0. 064 $-8081 1 ANNP-E71-T2 $-80811 ALNP-E51-T2 1. 2V42. 0% 0. 073 $-808 1 2ANNP-E72-T2 $-8081 ZALNP-E52-T2 1. W2. 0% 0. 083 S808 13ANNP-EDA-T2 $-80813ALNP-EAA-T2 1. 4V2. 0% 0. 093 $-80814ANNP-EDB-T2 $-80814ALNP-EAB-T2 1. V42. 0% 0.075 $-8081 5ANNP-EDC-T2 $-8081 5ALNP-EAC-T2 1. V2. 0% 0. 080 S-80816ANNP-EDD-T2 $-80816ALNP-EAD-T2 1.7V42. 0% 0. 085 S-8081 7ANNP-EDE-T2 S-808 t FALNP-EAE-T2 1. 8V2. 0% 0. 090 $8081 8ANNP-EDF-T2 S-80818ALNP-EAF-T2 1. 9V+2. 0% 0. 095 $-8081 9ANNP-EDG-T2 $-80819ALNP-EAG-T2 2.0V+2. 0% 0. 100 S$80820ANNP-EDH-T2 S-B0820ALNP-EAH-T2 2.1V%2. 0% 0. 105 $80821ANNP-EDJ-T2 $-80821ALNP-EAJ-T2 2. 2V42. 0% 0.110 S$-80822ANNP-EDK-T2 $-80822ALNP-EAK-T2 . 2.42. 0% 0.115 S$-80823ANNP-EDL-T2 $-80823ALNP-EAL-T2 2. 4V+2. 0% 0. 120 S$-80824ANNP-EDM-T2 $-80824ALNP-EAM-T2 - 2. 5V+2. 0% 0. 126 S$-80825ANNP-EDN-T2 $-80825ALNP-EAN-T2 2. 6V+2. 0% 0. 130 S80826ANNP-EDP-T2 $~80826ALNP-EAP-T2 2. V2. 0% 0. 135 S-80827ANNP-EDQ-T2 S-80827ALNP-EAGQ-T2 2. 8V+2. 0% 0. 140 $-80828ANNP-EDR-T2 $-80828ALNP-EAR-T2 2.9V42. 0% 0. 145 S-80829ANNP-EDS-T2 $-80829ALNP-EAS-T2 3.0VE2. 0% 0. 150 S-80830ANNP-EDT-T2 $-80830ALNP-EAT-T2 3.1V+2. 0% 0. 155 $-80831 ANNP-EDV-T2 $-80831 ALNP-EAV-T2 . 3. 2V42. 0% 0. 160 S-80832ANNP-EDW-T2 $-80832ALNP-EAW-T2 3. V2. O% 0. 165 S-BOB33ANNP-EOX-T2 $-80833ALNP-EAX-T2 3. 4V2. 0% 0.170 S-80834ANNP-EDY-T2 S-80834ALNP-EAY-T2 3. V2. O% 0.175 S-80835ANNP-EDZ-T2 $-80835ALNP-EAZ-T2 3. 6V+2. 0% 0. 180 S-80836ANNP-EDO-T2 S-80836ALNP-EAO-T2 3. V2. 0% 0. 185 S-80837ANNP-ED1-T2 $-80837ALNP-EA!-T2 3. 8Vt2. 0% 0. 190 S-80838ANNP-ED2-T2 $-80838ALNP-EA2-12 3. 9V12. 0% 0. 195 S-80839ANNP-ED3-T2 $-80839ALNP-EA3-T2 4.0V42. 0% 0. 200 S-GOB840ANNP-ED4-T2 S-80840ALNP-EA4-T2 4. 1V+2. 0% 0. 205 S$-80841 ANNP~ED5-T2 $-80841 ALNP-EA5-T2 4, 2V42.0% 0. 210 $80842ANNP-ED6-T2 $-80842ALNP-EA6-T2 4.N+2.0% . 0.215 S$-80843ANNP-ED7-T2 $-80843ALNP-EA7-T2 4.4V42.% 0. 220 S-80844ANNP-ED8-T2 S$-80844ALNP-EA8-T2 4.542. 0% 0. 225 $-80845ANNP-EDS-T2 S$-80845ALNP-EAQ-T2 4.6V+2. 0% 0. 230 S-8O846ANNP-EJA-T2 S-80846ALNP-EEA-T2 4. NL2. 0% 0. 235 S-80847ANNP-EJB-T2 $-806847ALNP-EEB-T2 4. 8V+2. 0% 0. 240 S$-80848ANNP-EJC-T2 S-8084BALNP-EEC-T2 - 4,9V+2. 0% 0. 245 S-80849ANNP-EJUD-T2 S-80849ALNP-EED-T2 - 5. 0V#2. 0% 0. 250 S-80850ANNP-EJE-T2 S-BO850ALNP-EEE-T2 ~ 5. 1V2. O% 0. 255 $-80851 ANNP-EJF-T2 $~80851ALNP-EEF-T2 5. V2. 0% 0. 260 S-80852ANNP-EJG-T2 $-80852ALNP-EEG-T2 5. V42. O% 0. 265 S-80853ANNP-EJH-T2 $-80853ALNP-EEH-T2 . 5. V2. O% 0. 270 $S-B0854ANNP-EJJ-T2 S-BOB54ALNP-EEJ-T2 5. 5V42. O% 0. 275 S-80855ANNP-EJK-T2 S-80855ALNP-EEK-T2 = 5. 6V2. O% 0. 28 S-80856ANNP~EJL-T2 S-80856ALNP-EEL-T2 5. V2. 0% 0. 285 $80857ANNP-EUM-T2 S-80857ALNP-EEM-2 . 5. 8V42. O% 6. 290 $-80858ANNP~EJN-T2 $-80858ALNP-EEN-T2 5. 9V42. O% 0. 295 S-80859ANNP-EJP-T2 S-80859ALNP-EEP-T2 . - - 6.0V12. OK. 0. 300 S-80860ANNP-EJG-T2 S-80860ALNP-EEQ-T2 Seiko Instruments Inc.| TENTATIVE LOW-VOLTAGE HIGH-PRECISION VOLTAGE DETECTOR $-808 Series @ Output Configurations 1. S-808 Series mode! numbering system Nch open-drain CMOS output (" L reset type) ( L reset type) N is the last letter of /L is the last letter of $-808 Series the model number. the model number. e.g. S-80808AN e.g. S-80808AL 2. Output configurations and their implementation | Implementation Nch L) CMOS (L) With different power supplies Yes No With different power supplies Yes Yes With active high reset CPUs No No With voltage divider variable resistors Yes No + Example with two power supplies * Examples with one power supply Von! Voo2 Von Voo@ Vool.. Voo2 v7D 4 CPU V7D CPU VD ; CPU Neh OUT CMOS | out Nch OUT Vss Vss Vss Figure 3 Seiko Instruments Inc. 3LOW-VOLTAGE HIGH-PRECISION VOLTAGE DETECTOR S-808 Series M@ Advantage over the S-807 Series The S-808 Series, | TENTATIVE] in comparison with conventional reset ICs such as the S-807 Series, offers greater detection voltage precision (S-808 Series: +2.0%; S-807 Series: +2.4%) and lower operating voltage (S-808 Series:0.7 V min.; S-807 Series:1.0 V min.). 1. Advantages of greater detection voltage precision 1.1 Detecting battery service life Typical discharge characteristics of batteries are shown in Figure 4. When using the S-807 Series, the service life can be detected over t1. When using the S-808 Series, it can be detected over t2. This improvement in detection precision of the S-808 Series allows batteries to be used to the full of their service life. Detecting a power voltage at two points It is usual for the CPU to detect the power voltage at two points, one to caution and the other to reset. The service life of the battery may also need to be detected at two points, one to caution and the other to request immediate replacement. In such cases, two detection voltage values (No. 1 and No. 2) should be set as close to the minimum operating voltage as possible, while keeping the two points as close to each other as possible. Since the S-808 Series offers higher precision in detecting voltage, No. 1 and No. 2 detections do not cross and can be effectuated correctly. These characteristics result in the following advantages over conventional products Vv 4 . $-807 t2 t1 Figure 4 LLL LLL Lc MM US Must be close No. 2 Figure 5 1.3 Operating margins of power and minimum operating voltage of CPU are close Reset voltage is so designed that CPU wil! be reset between the power voltage and the minimum operating voltage of the CPU. Thus, if the two voltage are very close, the reset voltage must be detected correctly between them. Since the S-808 Series offers excellent detection voltage precision, the voltage between narrow limits can be detected correctly 2. .Advantage of lowered operating voltage 2.1 -Low voltage detection - Power voltage COTTE LLLLLLLLLLL Min. operating voltage of CPU Reset voltage to be detected Figure 6 Voltages as low as 1.5 V, such as the power voltage of a single battery, can be detected using the S-808 Series which offers detection voltage in the range starting from 0.8 V. Seiko Instruments Inc.ENTATIVE M@ Absolute Maximum Ratings 1. LOW-VOLTAGE HIGH-PRECISION VOLTAGE DETECTOR Products with a Detection voltage of 1. 4 or less. (Unless otherwise specified: Ta=25C) Parameter Symbo | Ratings Unit Power supply voltage Vo Vss 7 Vv Output Nch Vour V55-0. 3 to 7 V voltage open-drain CMOS Vg5-0. 3 to Vp+0. 3 Vv Output current Jour 50 mA Power dissipation Pd 150 mi Operating temperature Topr -20 to +70 ae Storage temperature Tstg -40 to +125 c 2. Products with a Detection voltage of 1. 5 or more. Note: (Untess otherwise specified: Ta=25) Parameter Symbo | Ratings Unit Power supply voltage Voo Ves 12 Vv Output Ncho Vout Veg-0.3 to 12 v voltage open-drain CMOS Vg5~0. 3. to Vipt0. 3 Vv Output current lout 50 mA Power dissipation Pd 150 mW Operating temperature Topr -40 to +85 ae Storage temperature Tstg -40 to +125 c This IC has a bui It-in protection circuit forstatic electricity, S-808 Series however, prevent contact with a largestatic electricity or electrostatic voltage which exceeds the efficiency of the protection circuit. Seiko Instruments Inc.LOW-VOLTAGE HIGH-PRECISION VOLTAGE DETECTOR {TENT ATIVE, $-808 Series @ Electrica! Characteristics 1. Detection voltage (0.8V to 1. 4V) (Unless otherwise specified: Ta=25C) Parameter Symbol Conditions Min. Typ. Max. Unit nen t S-80808AXXP| 0. 784 0. 800 0. 816 S-80809AXXP| 0. 882 0. 900 0.918 S-80810AXXP| 0. 980 1. 000 1.020 Detection voltage| Vper $-80811AXXP} 1.078 1.100 1.122 V 1 $-80812AXXP} 1. 176 1. 200 1.224 $-80813AXXP} 1.274 1.300 1. 326 $-80814AXXP] 1. 372 1. 400 1. 428 S-80808AXXP| 0. 802 0. 900 0. 918 S-80809AXXP] 0.910 0. 944 0. 979 S-80810AXXP| 1.017 1.054 1.091 Release voltage *Voer S-80811AXXP} 1.125 1. 164 1. 203 V 1 $-80812AXXP| 1. 232 1. 273 1.315 $-80813AXXP} 1. 340 1. 383 1.427 S-80814AXXP| 1. 448 1. 493 1. 538 S-80808AXXP| 0.018 0. 034 0.051 S-80809AXXP] 0. 028 0. 044 0. 061 S-80810AXXP| 0. 037 0. 054 0.071 Hysteresis width Vuevs S-80811AXXP] 0. 047 0. 064 0. 081 V 1 $-80812AXXP| 0. 056 0.073 0.091 $-80813AXXP} 0. 066 0. 083 0. 101 $-80814AXXP| 0.076 0. 093 0.110 Vop=1. 5V S-80808AXXP S-80809AXXP S-80810AXXP Current les S-80811AXXP] __ 1.3 3.7 uA 2 consumption Vop=2. OV $-80812AXXP $-80813AXXP S-80814AXXP Operating voltage Voo 0.7 _ 5.0 V 1 Nch Vps=0. 5V 0. 04 0.2 3 Output current lour Vop=0. 7V mA - Pch (CMOS Vps=2. 1V 2.9 5.8 _ 4 o=: output) Vop=4. 5V Leak current of lem Nch (Nch Vps=5. OV _ _ 60 rA 3 - output transistor ~ lopen drain) V,=5. 0V 7 S-80808AXXP _ +0. 18 $-80809AXXP _ +0. 20 Temper ature A-Voer [Ta=-20C |S-80810AXXP +0. 22 _ mV /C 1 characteristic of| ATa |. to +70C|S-eosiiaxxP| | +024 | Voer $-8081 2AXXP +0. 27 $-80813AXXP +0. 29 $-80814AXXP _ +0. 31 _ 6 Seiko Instruments Inc. amTENT ATIVE LOW-VOLTAGE HIGH-PRECISION VOLTAGE DETECTOR S-808 Series 2. Detection voltage (1.5V to 2. 6V) (Unless otherwise specified: Ta=25C) Parameter Symbo| Conditions Min. Typ. Max. Unit c ree S-80815AXXP| 1.470 1. 500 1.530 S-80816AXXP| 1.568 1. 600 1. 632 S-80817AXXP| 1. 666 1. 700 1. 734 S-80818AXXP| 1. 764 1. 800 1. 836 S-80819AXXP} 1. 862 1. 900 1. 938 Detection voltage Voer S-80820AXXP} 1.960 2. 000 2. 040 Vv 1 S-80821AXXP| 2. 058 2. 100 2. 142 S-80822AXXP| 2. 156 2. 200 2. 244 S-80823AXXP| 2. 254 2. 300 2.346 S-80824AXXP| 2. 352 2. 400 2. 448 S-80825AXXP} 2. 450 2. 500 2.550 S-80826AXXP} 2.548 2. 600 2. 652 Hysteresis width Vays ong cons cone _v 1 nace tion Iss {Vp=3. 5V _ 0.8 24 | "BA 2 Operating voltage| Vo 0.95 10.0 | Vv 1 Nch Vopzt. 2V | 0.23 0.50 | 3 Output current Vps=0. 5V , lor {Pch (CMOS mA output) Vp=4. 8V 0. 36 0. 62 _ 4 Vpg=0. 5V Leak current of Iecax Nch (Nch Vps=10. OV _ 0.1 uA 3 output transistor open drain) V,)=10. OV S$-80815AXXP _ +0. 18 _ S-8081 6AXXP _ #0. 19 _ $-8081 7AXXP _ +0. 20 _ $-80818AXXP _ +0. 21 _ Temperature -80819AXXP _ +0. 22 _ characteristic of A-Voer Ta=-40C |S-80820AXXP _ 0. 24 _ mV/C 1 Voes Ata to +85C|S-80821AXXP _ 0. 25 _ S$-80822AXXP _ +0. 26 _ S-80823AXXP _ +0. 27 _ S-80824AXXP +0. 28 _ S-80825AXXP _ +0. 29 _ S-80826AXXP _ +0. 31 _ Seiko Instruments tnc. 7LOW-VOLTAGE HIGH-PRECISION VOLTAGE DETECTOR S-808 Series 3. Detection voltage (2. 7V to 3. 9V) (Unless otherwise specified: Ta=25C) | TENT Parameter Symbol Conditions Min. Typ. Max. Unit Test circuit S-80827AXXP| 2. 646 2. 700 2. 754 S-80828AXXP]| 2. 744 2. 800 2. 856 S-80829AXXP]| 2. 842 2. 900 2. 958 S-80830AXXP| 2. 940 3. 000 3. 060 $-80831AXXP} 3. 038 3. 100 3. 162 $~80832AXXP| 3. 136 3. 200 3. 264 Detection voltage Voer S-80833AXXP| 3. 234 3. 300 3. 366 Vv 1 S-80834AXXP| 3. 332 3. 400 3. 468 S-80835AXXP| 3. 430 3. 500 3.570 S-80836AXXP} 3.528 3. 600 3. 672 S-80837AXXP} 3. 626 3. 700 3.774 S-80838AXXP| 3. 724 3. 800 3. 876 S-80839AXXP} 3. 822 3. 900 3. 978 Hysteresis width Vays o% cots cong Vv 1 Current Iss [Vpg=4. 5V 0.9 2.7 uA 2 consumption (Operating voltage Voo 0. 95 _ 10.0 v 1 po Nch Vap=1. 2V 0. 23 0. 50 = Output current Vos=0. 5V Vop=2. 4V 1. 60 3.70 _ 3 Jour Pch (CMOS mA output) Vp=4. 8V 0. 36 0. 62 _ 4 ; Vp5=0. 5V Leak current of bem Nch (Nch Vys=10. OV _ _ 0.1 uA 3 output transistor open drain) V,=10. OV $-80827AXXP _ +0. 32 _ S-80828AXXP _ +0. 33 _ $-80829AXXP +0. 34 _ S-80830AXXP _ +0. 35 _ Temperature S-80831 AXXP _ +0. 36 _ characteristic of | A-Voer Ta=-40C |S-80832AXXP _ +0. 38 _ mV/C 1 -A-Voer ATa to +85C|S80833AXXP _ +0. 39 _ S-80834AXXP _ +0. 40 _ $-80835AXXP _ +0. 41 _ S-80836AXXP _ +0. 42 _ - $-80837AXXP _ +0. 44 _ $-80838AXXP _ #0. 45 _ . S-80839AXXP _ +0. 46 _ Seiko Instruments Inc.{ TENT ATIVE] LOW-VOLTAGE HIGH-PRECISION VOLTAGE DETECTOR $-808 Series 4. Detection voltage (4. 0V to 5. 6V) (Unless otherwise specified: Ta=25C) Parameter Symbol Conditions Min. Typ. Max. Unit Test circuit S-80840AXXP| 3.920 4. 000 4. 080 S-80841AXXP] 4.018 4. 100 4. 182 S~80842AXXP} 4.116 4. 200 4. 284 S-80843AXXP} 4. 214 4. 300 4. 386 S-80844AXXP| 4.312 4. 400 4. 488 S-80845AXXP} 4. 410 4. 500 4.590 S-80846AXXP| 4.508 4. 600 4. 692 S-80847AXXP| 4. 606 4. 700 4.794 Detection voltage Voer S-80848AXXP| 4. 704 4. 800 4. 896 v 1 S-80849AXXP} 4. 802 4. 900 4. 998 S-80850AXXP} 4. 900 5. 000 5. 100 S-80851AXXP| 4.998 5. 100 5. 202 S-80852AXXP} 5. 096 5. 200 5. 304 S-80853AXXP] 5. 194 5. 300 5. 406 S-B0854AXXP| 5. 292 5. 400 5. 508 S-80855AXXP} 5. 390 5. 500 5. 610 S-B0856AXXP]} 5. 488 5. 600 5.712 Hysteresis width Vuvs eon 3 ons one Vv 1 Current Nes [Vpp=6. OV 1.0 3.0 uA 2 consumption Operating voltage Voo 0.95 _ 10.0 v 1 Nch Voo=1. 2V 0. 23 0. 50 _ Vps=0. 5V Voom2. 4V 1.60 3. 70 _ 3 Output current lour [Pech (CMOS mA output) Voo=6. OV 0. 46 0.75 _ 4 Vpg=0. 5V Leak current of lea Noch (Nch Vpg=10. OV 0.1 uA 3 output transistor open drain) V,=10. OV S-80840AXXP _ +0. 47 _ S-80841AXXP _ +0. 48 _ $-80842AXXP _ 0. 49 _ S-80843AXXP _ +0. 51 _ S-80844AXXP _ +0. 52 _ S-80845AXXP _ 0. 53 _ Temper ature S-80846AXXP _ +0. 54 _ characteristic of A-Voer Ta=-40C |S-80847AXXP _ +0. 55 _ mV/C 1 Veer _- ATa to +85C|S-80848AXXP _ +0. 56 _ S-80849AXXP _ +0. 58 _ S-80850AXXP _ +0. 59 _ $-8085 1 AXXP _ +0. 60 _ : - " S-80852AXXP _ +0. 61 _ S-80853AXXP +0. 62 _ S-80854AXXP _ +0. 64 _ S-80855AXXP _ +0. 65 _ S-80856AXXP _ 0. 66 _ Seiko Instruments Inc. 95. Detection voltage (5. 7V to 6. OV) LOW-VOLTAGE HIGH-PRECISION VOLTAGE DETECTOR S-808 Series | TENTATIVE (Untess otherwise specified: Ta=25C) Seiko Instruments Inc. Parameter Symbo| Conditions Min Typ. Max. | unit | Test circuit S-80857AXXP} 5. 586 5. 700 5.814 Detection voltage Voer S-80858AXXP} 5. 684 5. 800 5.916 Vv 1 S-80859AXXP]} 5. 782 5. 900 6.018 S-80860AXXP] 5. 880 6. 000 6.120 : : Voer Voer Voer Hysteresis width Vays x0.03 x0. 05 x0. 08 V 1 Current Iss [Vag=7. SV 1.0 3.0 uA 2 consumption Operating voltage Vo 0. 95 _ 10.0 Vv 1 Nch Vop=1. 2V 0. 23 0. 50 _ Vps=0. 5V Voo=2. 4V 1.60 3.70 _ 3 Output current Jour Pch (CMOS mA output) Voo=8. 4V 0. 59 0. 96 _ 4 Vos=0. 5V Leak current of lem Noh (Nch Vps=10. OV _ _ 0.1 MA 3 output transistor open drain) V,=10. OV $-8085 7AXXP _ +0. 67 _ Temperature A-Vy, |Ta=-40C |S-80858AXXP _ +0. 68 _ mv/C |. 1 characteristic of ATa to +85C}S-80859AXXP _ +0. 69 _ Vey S-80860AXXP _ +0.71 _ M@ Test Circuits ~ GO) (2) (a) YS Voo Voo R* 100k Q Voo ae S~808 OUT v <x $-808 OUT Series ee Series [-_ v ss v ss * R is unnecessary for CMOS output products. + @) (4) Voo Voo ~) oie $-808 OuT = 8-808 Vos : : Voo . Voo - | Series (a) Series OUT (a) v ss (v) v ss . 7 - Vos Figure 7[TENT ATIVE] LOW-VOLTAGE HIGH-PRECISION VOLTAGE DETECTOR S-808 Series B@ Technical Terms 1. Detection voltage (-Vic7) The detection voltage -V,,; is the voltage at which the detector goes active, and the voltage at which the output goes low in products with Nch open-drain and CMOS active !ow output types. This detection voltage varies slightly among products of the same type. The variation of voltages between the specified minimum [(-Vj_;)min. ] and maximum { (Vey) max. ] values is called the detection voltage range (See Figure 8). Example : For the S-80808AN, detection voltage lies in the range of 0.784% (-V,,) SO. 816. This means that -Vy,; is 0.784 inaproduct while-Ve,;is 0.816 in another of the same S-80808AN. 2. Release voltage (+V,,) The release voltage +V,,; is the voltage at which the output returns (is released ) to high in products with Nch open-drain and CMOS active low output types. This release voltage varies slightly among products of the same type. The variation of voltages between the specified minimum [(+V,,,)min. ] and maximum [(+V,_7)max.] values is called the release voltage range (See Figure 9). Example : For the S-80808AN, the release voltage | ies in the range of 0. 8025 (+Vpe7) S0. 867. This means that +Ve; is 0.802 in a product while +Vx, is 0.867 in another of the same S-80808AN. Note: Although the detection voltage and release voltage overlap in the range of 0.802 V to 0.816 V, +Vy, will always be larger than Voy. Voo Voo Detection voltage Release voltage (Vpgr) Max. (+Voe7) Max Re| it i elease voltage range (Veer) Min. Voltage range Detection (Vpeq) Min OUT OUT Figure 8 Figure 9 3. Hysteresis width (Viys) The hysteresis width is the voltage difference between the detection voltage and the release voitage (B-A=Vivs in Figure 13). By giving a device hysteresis, trouble such as noise at the input is avoided. 4. Through-type current Through-type current refers to the current which flows instantaneously at the time of detection and release of a voltage detector. Through-type current is large in CMOS output devices, and also flows to some extent in Nch open-drain output devices. Seiko instruments Inc. 11LOW-VOLTAGE HIGH-PRECISION VOLTAGE DETECTOR | TENTATIVE S-808 Series 5. Oscillation In app! ications where a resistor is connected to the voltage detector input (Figure 10), in the CMOS active low products for example, the through-type current generated when the output goes from low to high (release) causes a voltage drop equal to [through-type current] x [input resistance] across the resistor. When the resultant input voltage drops below the detection voltage -V,,<;, the output voltage returns to its low level. Inthis state, the through-type current and its resultant voltage drop - have disappeared, and the output goes back from low to high. A through-type current is again generated, a voltage drop appears, and the process repeats. This unstable condition is referred to as oscil lation. * Misimplementation with input voltage divider Vo O (CMOS output products) O OUT RB Vsg Figure 10 WM Standard Circuit R* = 100kQ Voo Vss * R is unnecessary for CMOS output products. Figure 11 12 Seiko Instruments Inc.LOW-VOLTAGE HIGH-PRECISION VOLTAGE DETECTOR -808 Series TENTATIVE M@ Operation 1. Basic operation : CMOS active low output (1) When power supply voltage V, is greater than the release voltage +V,,, the Nch transistor is OFF and the Pch transistor ON, causing V, (high) to appear at the output. With the Nch transistor N1 of Figure 12 OFF, the comparator input voltage is (RB+RC) / (RA+RB+RC) X V9. (2) When power supply voltage V, goes below +V,,, the output maintains the power supply voltage level, as long as Von remains above the detection voltage Vy;. When V, does fall below Vy_e; (A in Figure 13), the Nch transistor goes ON, the Pch transistor goes OFF, and V,, appears at the output. With the Nch transistor N 1 of Figure 12 ON, the comparator input voltage is RB/(RA+RB) X Vj. (3) When V,) falls below the minimum operating voltage, the output becomes undefined. However, output will revert to Vy if a pull-up has been employed. (4) Veg will again be output when Vi) rises above the minimum operating voltage. Vg5 will continue to be output even when V,, surpasses -V,,, as long as it does not exceed the release voltage +Vp.;. (5) When Vi) rises above +V,, (B in Figure 13), the Nch transistor goes OFF, the Pch transistor goes ON, and Vi) appears at the output. (5) Voo Release voltage (+Vy1) 4 Ye a)! @ '@) (a) Hysteresis width (Vins) Detection voltage (Vp7) Min. operating voltage c Vss Bi ! OUT O) st . + * Parasitic diode Vig OUT terminal output Figure 13 Figure 12 2. Other characteristics (1) Temperature characteristic of detection voltage Because of the excellent temperature characteristics of the reference voltage circuit, the temperature characteristics of the detection voltage are expressed by the following formula in the range of -20 to +70 Cc. - : Voer -- x (+0.1) mV/C typ. Veer * Veep is 0.30 Vmin., 0.45 Vtyp., 0.60 V max. (Products with a Detection voltage of 1. 4 or more. ) - 7 - 0.70 Vmin., 0.85 V typ., 1.00 V max. (Products with a Detection voltage of 1. 5 or more. ) (2) Temperature characteristics of release voitage *Voer Veer x (40.1) mV/C typ. VEIRY EHIDLIUWUIGIEILS tty. 3LOW-VOLTAGE HIGH-PREGISION VOLTAGE DETECTOR I TENTATIVE S-808 Series TENTATIVE Hi Dimensions SC-82AB 2.0 (2.2 max. ) _ ~ 0. 165 O6 jeg 130.2 \ tt 0. 15 ale : + + I #t 0.0 min | | I I L 171 0.370 j5 | ag 090.15 aa 1.1 max | | : Figure 14 a Taping SC-82AB 1. Tape specifications : 1.534 1.10.1 fot 750.1 - 5-105 10. 00.05 - 7540. ZL <A - r Pi 0. 240.05 ae az y a al wv WY 4 Ya 3.50.1 5 tT a a a ay ay 8.00.2 4 2.60.2 WW p | Nyy 7 w \ yl _ Pil. 3 > 1.10.1 12 Unit : mm - 2 1 O O O O EL i Heae| 3 4 ~ - Feed-direction Figure 15 14 Seiko Instruments Inc.| TENTATIVE 2. Reel specifications 1 reel holds 3000 detectors M@ Marking LOW-VOLTAGE HIGH-PRECISION VOLTAGE DETECTOR $-808 Series 13.041.4, 1803 9.0+0.3 Figure 16 A > B (4) (5) | | (6) (7) : (1) (2) (3) E (8) | fic) | | oy] Jat) - oD. (1) to (3) Product name (abbreviation) (4) to (11) Lot No. (indicated by dots) Figure 17 Seiko Instruments Inc. A Unit : mm 15LOW-VOLTAGE HIGH-PRECISION VOLTAGE DETECTOR | TENT ATIVE S-808 Series M@ Characteristics (typical characteristics) (1) Detection voltage (V_;) Temperature (Ta) (a) S-80808AL (b) $-80814AL 0.9 1.6 0. 88 Veer Voer 155 (Vv) 0. 86 (v) 1.5 0. 84 Vee" 0. 82 1.45 0.8 1.4 Voer 0. 78 1.35 0. 76 0. 74 1.3 ~40 -40 -20 0 20 40 60 80 Ta Ta 3 (2) Current consumption (Iss) Input voltage (Vp) (a) S-80808AL (b) $-80814AL 1 ] 6LA 1 Joo BLA 5 5 4 4 1 lee ss Ca A) 3 ( u A) 3 2 2 a LL aan | 1 1 a 0 0 0 1 2 3 4 5 0 1 2 3 4 5 Voo (V) Vp (V) (3) Current consumption (1,5) Temperature . (Ta) ol b) S-80814AL (a) $-80808AL Vert. 6 V (b) Ve22.0 V 6 6 . 5. 5 . 4 4 tee - ; lee ( uA) 3 (uA) 3 2 2 anes aan 1 = = 1 0 0 -40 -20 0 20 40 60 80 ~40 -20 0 20 40 60 80 Ta (C) Ta (C) 16 Seiko Instruments Inc.| TENTATIVE (4) Neh transistor output current (Igy) Vos (a) $-80814AL 2.5 Vor 2 Vp=1.3 V (mA) a 1.5 / 1 / Vp=1.0 V Vos (V) (6) Nch transistor output current (lyr) - Input voltage (Vp,) (a) $ -80814AL Vos 70. 5V 2.5 Ar Ta=-30C lout 2 (mA) // La Ta=25C 1.5 YAN Ta=80C 0 0.5 1 1.5 2 Voo (V) (8) Minimum operating voltage (a) S-80808AN (PULL- UP Vip: 100K) Voor 1 0.8 0.6 7 (mA) , 0.4 Ta=-30C Ta =25C - 0.2 Ta=80C ; | 0 0.2 0.4 0.6 0.8 1 Von () LOW-VOLTAGE HIGH-PRECISION VOLTAGE DETECTOR S-808 Series (5) Pch transistor output current (lou) Vps (b) S-80808AL 5 tout 4 (mA) Vp=2.9 V 3 La | Vpp=2. 4 V 2 al (| Vpp=1.9 V ' ye Vp=1.4 V pee oo nn Vp=0.9 V | 0 0 0.5 1 1.5 2 2.5 3 Vos (V) (7) Peh transistor output current (qr) = Input voltage (Vp,) (b) $-80814AL Vpg 0. 5V 2.5 I ouT 2 (mA) 1.5 Ta=-30C __| Ta=25C a Ta=80C 0 1.5 2 2.5 3 Voo (V) (b) S-80808AN (PULL-UP 3.0 V: 100K) 4 3 Ta=-30C I Vout \ Ta =25C ve (mA) 2 1 Ta=80C 0 0 0.2 0.4 0.6 0.8 1 Voo (V) Seiko Instruments Inc. 17LOW-VOLTAGE HIGH-PRECISION VOLTAGE DETECTOR $-808 Series (9) Dynamic response (a) $-80808AL 0.1 Response time (ms) 0.01 0. 001 0. 0001 0. 001 0.01 0.1 Load capacitance (, F) (c) $-80814AL 1 0.1 Response time _ (ms) 0. 01 0. 001 0. 0001 0. 001 0.01 0.1 Load capacitance (pF) Voo / , Vour : - = Veg tree eee ee ei <: tPHL +PLH Figure 18 Measuring conditions 5.0x0.9 V 5.0x0.1 V | TENTATIVE (b) S-80808AN 100 10 Response : 1 time (ms) 0.1 0.01 0. 0001 0. 001 0.01 0.1 Load capacitance (,F) (d) $-80814AN 100 10 Response time (ms) 0.1 0.01 0. 0001 0. 001 0. 01 0.1 Load capacitance (uF) Voo Re 3100kQ id $-808 OUT Voo / - Series Cour T9 * R is unnecessary for CMOS output products. Figure 19 Measuring circuit 18 Seiko Instruments Inc.| TENT ATIVE LOW-VOLTAGE HIGH-PRECISION VOLTAGE DETECTOR S-808 Series W@ Application Circuit Examples 1. Microcomputer reset circuits If the power supply voltage to a microcomputer falls below the specified level, an unspecified operation may be performed or the contents of the memory register may be lost. When power supply voltage returns to normal, the microcomputer needs to be initialized before normal operations can be done. Reset circuits protect microcomputers in the event of current being momentarily switched off or lowered. With the S-808 Series which has a low operating voltage, a high-precision detection voltage and hysteresis characteristic, the reset circuits shown in Figures 20 to 21 can be easily constructed. Voor Voo2 Von O > s- \ i - 808XXAL Micro- BOBXXAN Mere computer computer 4 Vsg * O Vos ____ (Nch open-drain output products only) Figure 20 Figure 21 2. Addition of power-on reset circuit A power-on reset circuit can be constructed using Nch open-drain product of $-808 Series. Vy 0 ; : (RS75k Q) b OUT c (Nch open-drain products) Vss_ O o Note 1: R should be 75 kQ or less for purpose of protection against osci | lation. Note 2: Di instantaneously discharges the electric charge stored by CG at the falling of the power. Di is not necessary if delay in falling time is normal. Voo OUT 9) (Vv) t(s) t(s) Figure 22 -- Note 3: When the power steeply rises, output may goes high for a instant due to the IC inconstant region characteristics (output voltage is unstable in the region under minimum operating voltage) as shown in Fig. 23. Voo OUT (Vv) (Vv) t(s) t(s) Figure 23 Seiko Instruments Inc. 19LOW-VOLTAGE HIGH-PRECISION VOLTAGE DETECTOR | TENT ATIVE $-808 Series 3. Change of detection voltege In Nch open-drain output products of the S-808 Series, detection voltage can be changed using resistance dividers or diodes as shown in Figures 24 and 25. In Figure 24, hysteresis width is also changed. Vo @ Vy CG? ra $ : Va 3 S- Vee s- q S808XXSN SO out Vu 808XXSN L0 out RB = (Nch open-drain (Nch open-drain products) products) Vgg O Vss_ GO + Detection voltage = a * Voer Detection voltage =Ve+V,2t (Vper) RA+RB : Hysteresis width = a Vins Figure 25 Notet: If RA and RB are large, the hysteresis width may be larger than the value given by the formula above due to through type current (which flows slightly in Nch open-drain circuit). Note2: RA should be 75kQor less for purpose of protection . against osci| lation. Figure 24 M@ Notes . In CMOS output products of the S-808 Series, through type current flows when the device is detecting or releasing If a high impedance is connected to the input, oscillation may be caused due to the fall of the voltage by the through type current when lowering the voltage during releasing. " When designing for mass production using an application circuit described herein, take the product deviation and temperature characteristic into consideration. * Seiko Instruments Inc. shall not bear any responsibility for the patents on the circuits described herein. 20 Seiko Instruments Inc.