(SEE REVERSE SIDE)
R0
BD135
BD137
BD139
NPN SILICON TRANSISTORS
JEDEC TO-126 CASE
DATA SHEE
T
DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial
Planar Transistors designed for audio amplifier and switching applications.
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL BD135 BD137 BD139 UNIT
Collector-Base Voltage VCBO 45 60 80 V
Collector-Emitter Voltage VCEO 45 60 80 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current IC 1.5 A
Peak Collector Current ICM 3.0 A
Base Current IB 0.5 A
Power Dissipation PD 12.5 W
Power Dissipation (TA=25°C) PD 1.25 W
Operating and Storage
Junction Temperature TJ,Tstg -65 to +150 °C
Thermal Resistance ΘJC 10 °C/W
Thermal Resistance ΘJA 100 °C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
BD135 BD137 BD139
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNIT
ICBO V
CB=30V 100 100 100 nA
ICBO V
CB=30V, TC=125°C 10 10 10 µA
IEBO V
EB=5.0V 10 10 10 µA
BVCEO I
C=30mA 45 60 80 V
VCE(SAT) I
C=500mA, IB=50mA 0.5 0.5 0.5 V
VBE(ON) V
CE=2.0V, IC=500mA 1.0 1.0 1.0 V
hFE V
CE=2.0V, IC=5.0mA 25 25 25
hFE V
CE=2.0V, IC=150mA 40 250 40 160 40 160
hFE V
CE=2.0V, IC=500mA 25 25 25
BD135-6 BD135-10 BD135-16
BD137-6 BD137-10 BD137-16
BD139-6 BD139-10 BD139-16
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX
hFE V
CE=2.0V, IC=150mA 40 100 63 160 100 250
BD135 / BD137 / BD139 NPN SILICON TRANSISTOR
JEDEC TO-126 CASE - MECHANICAL OUTLINE
Lead Code:
1. Emitter
2. Collector
3. Base
D
G
H
K
J
F
E
I
A
B
C
BACKSIDE
R1
123
MIN MAX MIN MAX
A 0.094 0.106 2.39 2.69
B
C 0.019 0.029 0.48 0.74
D 0.295 0.307 7.49 7.80
E
F 0.118 0.126 3.00 3.20
G 0.413 0.425 10.49 10.80
H
I 0.027 0.035 0.69 0.89
J
K
TO-126 (REV:R1)
DIMENSIONS
SYMBOL
INCHES MILLIMETERS
1.190.047
3.780.149
15.700.618
2.21
4.39
0.087
0.173
