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4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers

4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7

December 2014

4N38M, H11D1M, H11D3M, MOC8204M

6-Pin DIP High Voltage Phototransistor Optocouplers

Features

■

High Voltage:

– MOC8204M, BV

CEO

= 400 V

– H11D1M, BV

CEO

= 300 V

– H11D3M, BV

CEO

= 200 V

■

Safety and Regulatory Approvals:

– UL1577, 4,170 VAC

RMS

for 1 Minute

■

DIN-EN/IEC60747-5-5, 850 V Peak Working

Insulation Voltage

Applications

■

Power Supply Regulators

■

Digital Logic Inputs

■

Microprocessor Inputs

■

Appliance Sensor Systems

■

Industrial Controls

Description

The 4N38M, H11D1M, H11D3M, and MOC8204M are

phototransistor-type optically coupled optoisolators. A

gallium arsenide infrared emitting diode is coupled with a

high voltage NPN silicon phototransistor. The device is

supplied in a standard plastic six-pin dual-in-line

package.

Schematic Package Outlines

EMITTER

COLLECTOR

ANODE

CATHODE

6BASE

N/C

Figure 2. Package Outlines

Figure 1. Schematic

4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 2

4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers

Safety and Insulation Ratings

As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit

data. Compliance with the safety ratings shall be ensured by means of protective circuits.

Note:

1. Safety limit values – maximum values allowed in the event of a failure.

Parameter Characteristics

Installation Classiﬁcations per DIN VDE

0110/1.89 Table 1, For Rated Mains Voltage

< 150 V

RMS

I–IV

< 300 V

RMS

I–IV

Climatic Classiﬁcation 55/100/21

Pollution Degree (DIN VDE 0110/1.89) 2

Comparative Tracking Index 175

Symbol Parameter Value Unit

Input-to-Output Test Voltage, Method A, V

IORM

x 1.6 = V

Type and Sample Test with t

= 10 s, Partial Discharge < 5 pC 1360 V

peak

Input-to-Output Test Voltage, Method B, V

IORM

x 1.875 = V

100% Production Test with t

= 1 s, Partial Discharge < 5 pC 1594 V

peak

IORM

Maximum Working Insulation Voltage 850 V

peak

IOTM

Highest Allowable Over-Voltage 6000 V

peak

External Creepage

≥

7mm

External Clearance

≥

7mm

External Clearance (for Option TV, 0.4" Lead Spacing)

≥

10 mm

DTI Distance Through Insulation (Insulation Thickness)

≥

0.5 mm

Case Temperature

(1)

175 °C

S,INPUT

Input Current

(1)

350 mA

S,OUTPUT

Output Power

(1)

800 mW

Insulation Resistance at T

, V

= 500 V

(1)

> 10

4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 3

4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Note:

2. Parameters meet or exceed JEDEC registered data (for 4N38M only).

Symbol Parameter Device Value Unit

TOTAL DEVICE

STG

Storage Temperature All -40 to +125 °C

OPR

Operating Temperature All -40 to +100 °C

Junction Temperature All -40 to +125 ºC

SOL

Lead Solder Temperature All 260 for 10 seconds °C

Total Device Power Dissipation @ T

= 25°C All 420 mW

Derate Above 25°C 3.5 mW/°C

EMITTER

Forward DC Current

(2)

All 80 mA

Reverse Input Voltage

(2)

All 6.0 V

(pk) Forward Current – Peak (1 µs pulse, 300pps)

(2)

All 3.0 A

LED Power Dissipation @ T

= 25°C

(2)

All 120 mW

Derate Above 25°C 1.41 mW/°C

DETECTOR

Power Dissipation @ T

= 25°C All 300 mW

Derate linearly above 25°C 4.0 mW/°C

CEO

Collector to Emitter Voltage

(2)

MOC8204M 400 V

H11D1M 300 V

H11D3M 200 V

4N38M 80 V

CBO

Collector Base Voltage

(2)

MOC8204M 400 V

H11D1M 300 V

H11D3M 200 V

4N38M 80 V

ECO

Emitter to Collector Voltage

(2)

H11D1M,

H11D3M,

MOC8204M

Collector Current (Continuous) All 100 mA

4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 4

4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers

Electrical Characteristics

= 25°C unless otherwise specified.

Individual Component Characteristics

Note:

3. Parameters meet or exceed JEDEC registered data (for 4N38M only).

Symbol Characteristic Test Conditions Device Min. Typ. Max. Unit

EMITTER

Forward Voltage

(3)

= 10 mA All 1.15 1.50 V

Forward Voltage

Temperature Coefﬁcient All -1.8 mV/°C

Reverse Breakdown Voltage I

= 10 µA All 6 25 V

Junction Capacitance V

= 0 V, f = 1 MHz All 50 pF

= 1 V, f = 1 MHz 65 pF

Reverse Leakage Current

(3)

= 6 V All 0.05 10 µA

DETECTOR

CEO

Breakdown Voltage

Collector-to-Emitter

(3)

= 1 M

= 1.0 mA, I

= 0

MOC8204M 400 V

H11D1M 300 V

H11D3M 200 V

No RBE, I

= 1.0 mA 4N38M 80 V

CBO

Collector to Base

(3)

= 100 µA, I

= 0

MOC8204M 400 V

H11D1M 300 V

H11D3M 200 V

4N38M 80 V

EBO

Emitter to Base I

= 100 µA, I

= 0 4N38M 7 V

ECO

Emitter to Collector I

= 100 µA, I

= 0 All 7 10 V

CEO

Leakage Current

Collector to Emitter

(3)

= 1 M

)

= 300 V, I

= 0,

= 25°C MOC8204M

100 nA

= 300 V, I

= 0,

= 100°C 250 µA

= 200V, I

= 0,

= 25°C H11D1M

100 nA

VCE = 200 V, IF = 0,

TA = 100°C 250 µA

VCE = 100 V, IF = 0,

TA = 25°C H11D3M

100 nA

VCE = 100 V, IF = 0,

TA = 100°C 250 µA

No RBE, VCE = 60 V,

IF = 0, TA = 25°C 4N38M 50 nA

4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 5

4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers

Electrical Characteristics (Continued)

TA = 25°C unless otherwise specified.

Transfer Characteristics

Note:

4. Parameters meet or exceed JEDEC registered data (for 4N38M only).

Isolation Characteristics

Symbol Characteristics Test Conditions Device Min. Typ. Max. Unit

EMITTER

CTR Current Transfer Ratio,

Collector-to-Emitter

IF = 10 mA, VCE = 10 V,

RBE = 1 MΩ

H11D1M, H11D3M,

MOC8204M 2 (20) mA (%)

IF = 10 mA, VCE = 10 V 4N38M 2 (20) mA (%)

VCE(SAT) Saturation Voltage(4)

IF = 10 mA, IC = 0.5 mA,

RBE = 1 MΩ

H11D1M, H11D3M,

MOC8204M 0.1 0.4 V

IF = 20 mA, IC = 4 mA 4N38M 1.0 V

SWITCHING TIMES

tON

Non-Saturated

Turn-on Time VCE = 10 V, IC = 2 mA,

RL = 100 Ω

All 5 µs

tOFF Turn-off Time All 5 µs

Symbol Characteristic Test Conditions Min. Typ. Max. Unit

VISO Input-Output Isolation Voltage t = 1 Minute 4170 VACRMS

CISO Isolation Capacitance VI-O = 0 V, f = 1 MHz 0.2 pF

RISO Isolation Resistance VI-O = ±500 VDC, TA = 25°C 1011 Ω

4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 6

4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers

Typical Performance Curves

TA – AMBIENT TEMPERATURE (˚C)

NORMALIZED I

CEO

– DARK CURRENT

Figure 5. Normalized Output Current

vs. LED Input Current

IF – LED INPUT CURRENT (mA)

110

NORMALIZED I

– OUTPUT CURRENT

0.01

0.1

Normalized to:

VCE = 10 V

IF = 10 mA

RBE = 106 Ω

TA = 25˚C

TA – AMBIENT TEMPERATURE (˚C)

NORMALIZED I

– OUTPUT CURRENT

Figure 6. Normalized Output Current

vs. Temperature

-60 -40 -20 0 20 40 60 80 100

0.1

Normalized to:

VCE = 10 V

IF = 10 mA

RBE = 106 Ω

TA = 25˚C

IF = 10 mA

IF = 5 mA

IF = 20 mA

TA – AMBIENT TEMPERATURE (˚C)

NORMALIZED I

CBO

– COLLECTOR-BASE CURRENT

Figure 8. Normalized Collector-Base Current

vs. Temperature

-60 -40 -20 0 20 40 60 80 100

Normalized to:

VCE = 10 V

IF = 10 mA

RBE = 106 Ω

TA = 25˚C

IF = 50 mA

IF = 10 mA

IF = 5 mA

Figure 7. Normalized Dark Current

vs. Ambient Temperature

10 20 30 40 50 60 70 80 90 100 110

0.1

100

1000

10000

VCE = 300 V

VCE = 100 V

VCE = 50 V

Normalized to:

VCE = 100 V

RBE = 106 Ω

TA = 25˚C

VCE – COLLECTOR VOLTAGE (V)

NORMALIZED I

– OUTPUT CURRENT

Figure 4. Normalized Output Characteristics

0.1 1 10 100

0.01

0.1

Normalized to:

VCE = 10 V

IF = 10 mA

RBE = 106 Ω

TA = 25˚C

IF – LED FORWARDCURRENT (mA)

– FORWARD VOLTAGE (V)

Figure 3. LED Forward Voltage

vs. Forward Current

1 10 100

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

TA = -55˚C

TA = 25˚C

TA = 100˚C

IF = 50 mA

IF = 5 mA

IF = 10 mA

4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 7

4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers

Reflow Profile

Figure 9. Reﬂow Proﬁle

300

280

260

240

220

200

180

160

140

120

100

°C

Time (s)

0 60 180120 270

260°C

> 245°C = 42 s

Time above

183°C = 90 s

360

1.822°C/s Ramp-up rate

33 s

4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7 8

4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers

Ordering Information

Note:

2. The product orderable part number system listed in this table also applies to the 4N38M, H11D3M, and MOC8204M

devices.

Marking Information

Figure 10. 12. Top Mark

Table 1. Top Mark Deﬁnitions

Part Number Package Packing Method

H11D1M DIP 6-Pin Tube (50 Units)

H11D1SM SMT 6-Pin (Lead Bend) Tube (50 Units)

H11D1SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units)

H11D1VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units)

H11D1SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units)

H11D1SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units)

H11D1TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units)

1 Fairchild Logo

2 Device Number

3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)

4 One-Digit Year Code, e.g., “4”

5 Digit Work Week, Ranging from “01” to “53”

6 Assembly Package Code

H11D1

V X YY Q

43 5

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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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