MJ2500 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

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. . . for use as output devices in complementary general purpose amplifier applica-

tions.

•High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc

•Monolithic Construction with Built–in Base–Emitter Shunt Resistors

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

MJ2500

MJ3000

ÎÎÎÎ

MJ2501

MJ3001

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCB

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

0.2

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation

@ TC = 25

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

150

0.857

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

–55 to +200

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

θJC

ÎÎÎÎÎÎÎ

1.17

ÎÎÎ

C/W

Figure 1. Darlington Circuit Schematic

NPN

MJ3000

MJ3001

BASE

COLLECTOR

EMITTER

[

2.0 k

[

PNP

MJ2500

MJ2501

BASE

COLLECTOR

EMITTER

[

2.0 k

[

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJ2500/D

  



 

 Motorola, Inc. 1995



*Motorola Preferred Device



CASE 1–07

TO–204AA

(TO–3)

10 AMPERE

DARLINGTON

POWER TRANSISTORS

COMPLEMENTARY

SILICON

60–80 VOLTS

150 WATTS









 

REV 7

   

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Emitter Breakdown Voltage(1) MJ2500, MJ3000

(IC = 100 mAdc, IB = 0) MJ2501, MJ3001

ÎÎÎÎ

V(BR)CEO

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Leakage Current

(VEB = 60 Vdc, RBE = 1.0 k ohm) MJ2500, MJ3000

(VEB = 80 Vdc, RBE = 1.0 k ohm) MJ2501, MJ3001

(VEB = 60 Vdc, RBE = 1.0 k ohm, TC = 150

C) MJ2500, MJ3000

(VEB = 80 Vdc, RBE = 1.0 k ohm, TC = 150

C) MJ2501, MJ3001

ÎÎÎÎ

ICER

ÎÎÎÎ

—

ÎÎÎÎ

1.0

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Emitter Leakage Current (VCE = 30 Vdc, IB = 0) MJ2500, MJ3000

(VCE = 40 Vdc, IB = 0) MJ2501, MJ3001

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS(1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

1000

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 20 mAdc)

(IC = 10 Adc, IB = 50 mAdc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

2.0

4.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Emitter Voltage (IC = 5.0 Adc, VCE = 3.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

3.0

ÎÎÎ

Vdc

(1)Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

Figure 2. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 10

hFE, DC CURRENT GAIN

TJ = 150

–55

CVCE = 3.0 Vdc

500

200

100

50,000

5000

20,000

2000

1000

10,000

5.0

Figure 3. Small–Signal Current Gain

f, FREQUENCY (Hz)

500

300

100

3000

hFE, SMALL–SIGNAL CURRENT GAIN

200

2000

1000

TC = 25

VCE = 3.0 Vdc

IC = 5.0 Adc

104

103105106

IC, COLLECTOR CURRENT (AMP)

VBE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

Figure 4. “On” Voltages

VCE(sat) @ IC/IB = 250

TJ = 25

VBE @ VCE = 3.0 V

0.01 0.2 0.50.05 1.0 2.0 105.0

3.5

2.5

2.0

1.5

1.0

SECONDARY BREAKDOWN LIMITED

THERMALLY LIMITED @ TC = 25

BONDING WIRE LIMITED

1.0

Figure 5. DC Safe Operating Area

7.0

2.0

10 20 100

TJ = 200

0.2

3.0

0.5

IC, COLLECTOR CURRENT (AMP)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

30 70

1.0

0.1 2.0 503.0 5.0 7.0

MJ2500, MJ3000

MJ2501, MJ3001

0.5

3.0

0.10.02

0.7

0.3

There are two limitations on the power handling ability of a

transistor: junction temperature and secondary breakdown.

Safe operating area curves indicate IC – VCE limits of the

transistor that must be observed for reliable operation; e.g.,

the transistor must not be subjected to greater dissipation

than the curves indicate.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the limita-

tions imposed by secondary breakdown.

   

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B––– 1.050 ––– 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N––– 0.830 ––– 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

   

4 Motorola Bipolar Power Transistor Device Data

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MJ2500/D

*MJ2500/D*

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