MBR6045WTG - ON Semiconductor L.L.C.

March, 2010 − Rev. 9

1Publication Order Number:

MBR6045WT/D

MBR6045WT

SWITCHMODEt

Power Rectifier

The SWITCHMODE power rectifier employs the use of the

Schottky Barrier principle with a Platinum barrier metal.

Features

•Dual Diode Construction; Terminals 1 and 3 May Be Connected for

Parallel Operation at Full Rating

•45 V Blocking Voltage

•Low Forward Voltage Drop

•Guard−ring for Stress Protection and High dv/dt Capability (> 10 V/ns)

•175°C Operating Junction Temperature

•Pb−Free Package is Available*

Mechanical Characteristics

•Case: Epoxy, Molded

•Weight: 4.3 Grams (Approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

MAXIMUM RATINGS

Rating Symbol Max Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

45 V

Average Rectified Forward Current

(Rated VR, TC = 125°C) Per Diode

Per Device

IF(AV)

Peak Repetitive Forward Current,

(Rated VR, Square Wave,

20 kHz, TC = 90°C) Per Diode

IFRM 60 A

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

IFSM 500 A

Peak Repetitive Reverse Current

(2.0 ms, 1.0 kHz)

IRRM 2.0 A

Storage Temperature Range Tstg −65 to +175 °C

Operating Junction Temperature (Note 1) TJ−65 to +175 °C

Peak Surge Junction Temperature

(Forward Current Applied)

TJ(pk) 175 °C

Voltage Rate of Change dv/dt 10,000 V/ms

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. The heat generated must be less than the thermal conductivity from

Junction−to−Ambient: dPD/dTJ < 1/RqJA.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

http://onsemi.com

TO−247

CASE 340L

STYLE 2

SCHOTTKY BARRIER

RECTIFIER

60 AMPERES, 45 VOLTS

2, 4

Device Package Shipping

ORDERING INFORMATION

MBR6045WT TO−247 30 Units/Rail

MBR6045WTG TO−247

(Pb−Free)

30 Units/Rail

MARKING DIAGRAM

MBR6045WT

AYWWG

MBR6045WT

http://onsemi.com

THERMAL CHARACTERISTICS (Per Diode)

Rating Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 1.0 °C/W

ELECTRICAL CHARACTERISTICS (Per Diode)

Instantaneous Forward Voltage (Note 2)

@ IF = 30 Amps, TC = 25°C

@ IF = 30 Amps, TC = 125°C

@ IF = 60 Amps, TC = 25°C

0.62

0.55

0.75

Volts

Instantaneous Reverse Current (Note 2)

@ Rated DC Voltage, TC = 25°C

@ Rated DC Voltage, TC = 100°C

1.0

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle < 2.0%

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. Typical Reverse Current Figure 2. Typical Forward Voltage

VR, REVERSE VOLTAGE (VOLTS)

IR, REVERSE CURRENT (mA)

, INSTANTANEOUS FORWARD VOLTAGE (mV)

iF, INSTANTANEOUS FORWARD CURRENT (AMPS)

1000

100

0.1

0.01 50403020100

TC = 150°C

TC = 100°C

TC = 25°C

100

1100 200 300 400 500 600 700 800

150°C 100°C TC = 25°C

MBR6045WT

http://onsemi.com

PACKAGE DIMENSIONS

TO−247

CASE 340L−02

ISSUE E

STYLE 2:

PIN 1. ANODE

2. CATHODE (S)

3. ANODE 2

4. CATHODES (S)

0.25 (0.010) MYQS

123

−T−

−B−

−Y−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

2 PL

3 PL

0.63 (0.025) MTBM

−Q−

LDIM MIN MAX MIN MAX

INCHESMILLIMETERS

A20.32 21.08 0.800 8.30

B15.75 16.26 0.620 0.640

C4.70 5.30 0.185 0.209

D1.00 1.40 0.040 0.055

E1.90 2.60 0.075 0.102

F1.65 2.13 0.065 0.084

G5.45 BSC 0.215 BSC

H1.50 2.49 0.059 0.098

J0.40 0.80 0.016 0.031

K19.81 20.83 0.780 0.820

L5.40 6.20 0.212 0.244

N4.32 5.49 0.170 0.216

P--- 4.50 --- 0.177

Q3.55 3.65 0.140 0.144

U6.15 BSC 0.242 BSC

W2.87 3.12 0.113 0.123

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

MBR6045WT/D

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.

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