Rugged Power MOSFETs IRFP250R, IRFP251R, IRFP252R, IRFP253R Avalanche Energy Rated N-Channel Power MOSFETs 25A and 30A, 150V-200V fos(on) = 0.0859 and 0.1200 Features: BB Single pulse avalanche energy rated Hf SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance The IRFP250R, IRFP251R, IRFP252R and IRFP253R are advanced power MOSFETs designed, tested, and guaran- teed to withstand a specified level of energy in the break- down avalanche mode of operation. These are n-channel enhancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, File Number 2016 N-CHANNEL ENHANCEMENT MODE Do 97Cs~-4265@ TERMINAL DIAGRAM TERMINAL DESIGNATION SOURCE switching converters, motor drivers, relay drivers, and driv- a - ers for high-power bipolar switching transistors requiring DRAIN high speed and low gate-drive power. These types can be DRAIN O pa operated directly from integrated circuits. (TAB) The IRFP-types are supplied in the JEDEC TO-247 plastic Co + package. * TOP VIEW GATE JEDEC TO-247 Absolute Maximum Ratings Par: te IRFP250R | IRFP251R | IRFP252R | IRFP253R Units Vos Drain - Source Voltage @ 200 150 200 150 Vv Vosr Drain - Gate Voltage (Ras = 20 KN) 200 150 200 150 Vv lo @ Tc = 25C Continuous Drain Current 30 30 25 25 A Ip @ Te = 100C Continuous Drain Current 19 19 16 16 A lom Pulsed Drain Current @ 120 120 100 100 A Ves Gate - Source Voltage +20 Vv Pp @ Tc = 25C Max. Power Dissipation 150 (See Fig. 14) Ww Linear Derating Factor 1.2 (See Fig. 14) W/C Es Single Pulse Avalanche Energy Rating @ 810 mj ie Sn ae 55 0 160 c Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-284Rugged Power MOSFETs IRFP250R, IRFP251R, IRFP252R, IRFP253R Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) Parameter Type Min. Typ. | Max. | Units Test Conditions BVoss Drain - Source Breakdown Voltage | IRFP250R _ IRFP252R | 200 - _ Vv Ves = OV IRFP251R _ IRFP253R | 159 _ - Ib = 250uA Vestn Gate Threshold Voltage ALL 2.0 = 4.0 Vos = Vas, Ip = 2504 A less Gate-Source Leakage Forward ALL _ = 100 nA Ves = 20V loss Gate-Source Leakage Reverse ALL a -100 nA Ves = -20V loss Zero Gate Voltage Drain Current LL _ = 250 HA Vos = Max. Rating, Ves = OV A = = 1000 HA Vos = Max. Rating x 0.8, Vas = OV, Te = 125C Ipom On-State Drain Current @ IRFP250R | 39 _ _ A IRFP251R Vos > Ipiom X Rostom max, Vas = 10V IRFP252R | og _ _ A IRFP253R Rosion Static Drain-Source On-State IRFP250R Resistance @ IRFP251R | | 9.07 | 0.085 | 2 - _ IREP250R Ves = 10V, ln = 16A IRFP253R | 0.09 | 0.120 Q | Gt Forward Transconductance @ ALL 8.0 14 = S(G)_ | Vos > Into X Rosionrmax., Io = 16A Cine Input Capacitance ALL = 2000 - pF Ves = OV, Vos = 25V, f= 1.0 MHz Coss Output Capacitance ALL = 800 = pF See Fig. 10 Cus Reverse Transfer Capacitance ALL 300 = pF tarom Turn-On Delay Time ALL _ _ 35 ns Vpo = 95V, lo = 16A, Zo = 4.70 t Rise Time ALL = = 100 ns See Fig. 17 tarot Turn-Off Delay Time ALL _ 125 ns (MOSFET switching times are essentially th Fall Time ALL 100 ns independent of operating temperature.) Qs Total Gate Charge ALL _ 79 120 nc Vas = 10V, Ip = 38A, Vos = 0.8V Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Qos Gate-Source Charge ALL 37 _ nc essentially independent of operating an RA ice temperature.) Qe Gate-Drain (Miller) Charge ALL = 42 = oc Lo Internal Drain Inductance ALL _ 5.0 _ nH Measured between Modified MOSFET the contact screw on symbol showing the header that is closer to | internal device , source and gate pins inductances and center of die. vo Ls Internal Source Inductance ALL _ 12.6 _ nH Measured from the source pin, 6 mm S Ls (0.25 in.) from header and source $ bonding pad. e2ca s2ees Thermal Resistance RitC Junction-to-Case ALL = = 0.83 | C/W RnCS Case-to-Sink ALL _- 0.1 = C/W_| Mounting surface flat, smooth, and greased. RinJA Junction-to-Ambient ALL _ _ 30 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRFP250R | _ _ 30 A Modified MOSFET symbol (Body Diode) IRFP251R showing the integral D IRFP252R A reverse P-N junction rectifier. IRFP25aR | | ~ | 2 sn Pulse Source Current IRFP250R | __ _ 420 A So {Body Diode) @ IREP251R > IRFP252R vecs-azese IRFP25aR | | ~ | 19 | A Vsp Diode Forward Voltage IRFP250R _ = 9R0 = = IRFP251R | 2.0 Vv Tc = 25C, Is = 30A, Ves = OV (RFP252R = = = IRFP253R | - 18 Vv Tc = 28C, Is = 25A, Vas = OV te Reverse Recovery Time ALL _ 750 = ns Ts = 150C, le = 30A, dir/dt = 100A/ys Qrr Reverse Recovered Charge ALL = 47 _ uc Tu = 150C, le = 30A, die/dt = 100A/ps ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo. @ Ty = 25C to 150C. @ Pulse Test: Pulse width < 300us, Duty Cycle < 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). @ Von = SOV, starting T, = 25C, L = 1.1 mH, Rge = 500, Ipeak = 33A. See figures 15, 16. 6-285Rugged Power MOSFETs IRFP250R, IRFP251R, IRFP252R, IRFP253R 80 us PULSE TEST Vgs77V a % re 2 = = e 2 S a = 2 oO = <x S s 3.5V 0 10 20 30 40 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics 80 ys PULSE TEST g ec a = = i z a x f= > 3 = 4 a 2 0 04 Os 12 1.6 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics NORMALIZED EFFECTIVE TRANSIENT PEDANCE {PER UNIT) THERMAL IM & Zenscttl/ Rinse. e 8 0.01 5 2 5 a4 2 5 193 50 SINGLE PULSE (TRANSIENT THERMAL IMPEDANCE} Ip, ORAIN CUBRENT (AMPERES) tp, GRAIN CURRENT (AMPERES) 8D ys PULSE TEST Vos > 'Dion) * Rosion) max. Ty = 128C | Ty = 250C | Ty = -50C 1 2 3 4 6 ? 8 Vas. GATE TO-SOURCE VOLTAGE (VOLTS) Fig. 2 Typical Transfer Characteristics OPERATION IN THIS AREA IS LIMITED BY Rosion) Te = 259C Ty = 180C MAX. Rinse = 0.83 K/W SINGLE PULSE 102 5 0 20 50 100 200 500 Vos, ORAIN-TO-SQURCE VOLTAGE (VOLTS) Fig. 4 Maximum Safe Operating Area [et -m b to 1. DUTY FACTOR, D = + 2. PER UNIT BASE = Ringe = 0.83 DEG, C/W. 3. Tym - Te = Pom Zenicit)- 5 wi 2 5 1 2 5 10 ty, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration 6-286Rugged Power MOSFETs IRFP250R, IRFP251R, IRFP252R, IRFP253R Vos >'pion) x Raston) max. 1 1 \ BO ys PULSE TEST Sty, TRANSCONDUCTANCE (SIEMENS) 0 10 20 30 4) 90 Ip, ORAIN CURRENT (AMPERES) Fig. 6 Typical Transconductance Vs. Drain Current 1.25 1.18 = a 2 rs o 0.85 BV oss, DRAIN-TO-SGURCE BREAKDOWN VOLTAGE (NORMALIZED) 0.75 -40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature 4000 Vgs=0 i 3200 t= tMHr Cigg = Cys + Cog, Cys SHORTED Cres = Cos ~ Cos Cog S Coss = Cas* EE = 2400 as * Cy 3 = Cyst Coq ft & 2 Ciss & s& 1600 o 800 0 10 20 30 40 so Vos. DRAIN-TO-SQURCE VOLTAGE (VOLTS) Fig. 10 Typical Capacitance Vs, Drain-to-Source Voltage Ty = 25C Ty = 150C Ty = 1800C Ty = 259C Ipg, REVERSE DRAIN CURRENT (AMPERES) G 1 2 3 4 Vg. SOURCE.TO-DRAIN VOLTAGE (VOLTS) Fig. 7 Typical Source-Drain Diode Forward Voltage 24 Vgg = 10V Ip = 16A 22 Ros(on). ORAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) = 06 0.2 -40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) Fig. 9 Normalized On-Resistance Vs. Temperature 20 16 os = 40v Vos = 100V.| [ Vos = 160V, IRFP250A, 252A J Vg, GATE TO SOURCE VOLTAGE {VOLTS) so 5 / 1g = 38A FOR TEST CIRCUIT + J SEE FIGURE 18 0 28 $6 84 V2 140 Qg. TOTAL GATE CHARGE {nC} Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 6-287Rugged Power MOSFETs IRFP250R, IRFP251R, IRFP252R, IRFP253R 0.22 7 r 7 Rosion) MEASURED WITH a CURRENT PULSE OF = 2.0 us DURATION. 4 2 INITIAL Ty = 25C. 3 (HEATING EFFECT OF 2.0 us = 0.18 Vgs = 10V F+ PULSE IS MINIMAL.) 1 2 a a rs 2 i=} w fe O14 > o a o - = <= 4 0.10 va 2 y Lv = 20V 3 "| GS | La 0.06 0 40 80 120 160 Jp, DRAIN CURRENT (AMPERES) Fig. 12 Typical On-Resistance Vs. Drain Current 1p, GRAIN CURRENT (AMPERES) 30 24 IRFP2S5OR, 251 IRFP252A, 253R Qo 25 50 15 100 Tc, CASE TEMPERATURE (C) 125 150 Fig. 13 Maximum Drain Current Vs. Case Temperature NX Vos 140 NX VARY tp TO OBTAIN 120 \ REQUIRED PEAK IL buv . a \ Res ~Vpo c NX = 100 vesttov f tp] = \ S = ao \ = a 92C$- 42659 a 2 Fig. 15 Unclamped Energy Test Circuit = 60 & = oa a 40 \ 20 NI Qo 20 40 60 80 100 120 140 92CS- 42660 Te CASE TEMPERATURE (C) . : Fig. 16 Unclamped Energy Waveforms Fig. 14 Power Vs. Temperature Derating Curve iv CURRENT [~O+Vps oD REGULATOR (ISOLATED ADJUST Ri TO OBTAIN q SUPPLY) SPECIFIED Ip mvt SAME TYPE 12v Vos BATTERY VGs Fey LSE ] bea ) our GENERATOR 1082 SOURCE J] | IMPEDANCE L__f4 Fig. 17 Switching Time Test Circuit 6-288 O-Vps Ig oe 'p CURRENT CURRENT SHUNT SHUNT 92G8-44103 Fig. 18 Gate Charge Test Circuit