Datasheet.Directory

{"Status":"Discontinued","V(FM) Max.(V) Forward Voltage":"1.18","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"80","Package":"N/A","@Temp (°C) (Test Condition)":"45","@Temp. (°C) (Test Condition)":"25","@t(w) (s) (Test Condition)":"8.3m","V(RRM)(V) Rep.Pk.Rev. Voltage":"1.4k","Military":"N","I(RM) Max.(A) Reverse Current":"1.0m","@I(FM) (A) (Test Condition)":"5.4","I(O) Max.(A) Output Current":"2.0","I(RM) Max.(A) Pk. Rev. Current":"2.0m"}...

{"Status":"Discontinued","V(FM) Max.(V) Forward Voltage":"1.34","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"200","Package":"N/A","@Temp (°C) (Test Condition)":"25","@Temp. (°C) (Test Condition)":"25","@t(w) (s) (Test Condition)":"10m","V(RRM)(V) Rep.Pk.Rev. Voltage":"1.4k","Military":"N","I(RM) Max.(A) Reverse Current":"1.0m","@I(FM) (A) (Test Condition)":"30","I(O) Max.(A) Output Current":"9.0","I(RM) Max.(A) Pk. Rev. Current":"20m"}...

{"Status":"Discontinued","@V(R) (V) (Test Condition)":"10n","Spectral Response High (m)":"1.1u","Spectral Response Low (m)":"200n","Semiconductor Material":"Silicon","Photosensitive Area (mm2)":"314","@Wavelength(m)(Test Condition)":"950n","Package":"FP","Re Min.(A/W) Responsivity":"650m","V(R) Max.(V) Reverse Voltage":"30","C(T) Max. (F) Capacitance":"9.0n","t(resp) Max.(s) Response Time":"75n","NEP Max.(W/(Hz)1/2)":"100f","Ioff Max.(A) Off-state Current":"60f"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b112(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"6.9(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"30(V)","Pin Count":"8","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.027(ohm)","Number of Elements":"2"}...

{"Category":"Connectors, Interconnects","Ratings":"-","Number of Positions/Contacts":"8p8c (RJ45, Ethernet)","Housing Material":"Polycarbonate (PC)","Operating Temperature":"-40\u00b0C ~ 105\u00b0C","Mounting Type":"Panel Mount, Flange (2 Hole); Through Hole","Contact Finish Thickness":"50\u00b5in (1.27\u00b5m)","Tab Direction":"User Selectable","Shielding":"Unshielded","Number of Rows":"1","Standard Package":"70","Connector Type":"Jack","Contact Finish":"Gold","Number of Ports":"1","Termination":"Solder","...

{"Category":"Connectors, Interconnects","Ratings":"-","Number of Positions/Contacts":"8p8c (RJ45, Ethernet)","Housing Material":"Polycarbonate (PC)","Operating Temperature":"-40\u00b0C ~ 105\u00b0C","Mounting Type":"Panel Mount, Flange (2 Hole); Through Hole","Contact Finish Thickness":"50\u00b5in (1.27\u00b5m)","Tab Direction":"User Selectable","Shielding":"Unshielded","Number of Rows":"1","Standard Package":"70","Connector Type":"Jack","Contact Finish":"Gold","Number of Ports":"1","Termination":"Solder","...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1.5V @ 250\u00b5A","Other Drawings":"AO4xxx Series 8-SOIC Top AO4xxx Series 8-SOIC End AO4xxx Series 8-SOIC Side","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"6.9A","Gate Charge (Qg) @ Vgs":"7nC @ 4.5V","Product Photos":"8-SOIC","Rds On (Max) @ Id, Vgs":"27 mOhm @ 6.9A, 10V","Datasheets":"AO4800B SO8 Pkg Drawing","FET Type":"2 N-Channel (Dual)","Standard Pa...

{"Actuation":"Hydraulic","Primary Type":"Bar Cutter","Type":"Cutter","Weight":"40 Lbs."}...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"1.79","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"100 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"15","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"RO...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"25 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"5","Variable Capacitance Diode Classification":"HYPERABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min"...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Operating Temperature-Max":"125 Cel","Mfr Package Description":"CHIP, LEADED/ROHS COMPLIANT","Operating Temperature-Min":"-55 Cel","Size Code":"1111","Multilayer":"Yes","Mounting Feature":"SURFACE MOUNT","Terminal Shape":"WRAPAROUND","Capacitor Type":"CERAMIC","Manufacturer Series":"ATC800B","Package Shape":"RECTANGULAR PACKAGE"}...