DS30144 Rev. 9 - 2 1 of 5 BSS138
www.diodes.com ã Diodes Incorporated
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic Symbol BSS138 Units
Drain-Source Voltage VDSS 50 V
Drain-Gate Voltage RGS £ 20KWVDGR 50 V
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current Continuous ID200 mA
Power Dissipation (Note 1) Pd300 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 417 °C/W
Operating and Storage Temperature Range Tj,T
STG -55 to +150 °C
·Case: SOT-23
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminals: Solderable per MIL-STD-202, Method 208
·Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
·Terminal Connections: See Diagram
·Marking (See Page 2): K38
·Ordering & Date Code Information: See Page 2
·Weight: 0.008 grams (approximate)
Mechanical Data
A
E
JL
TOP VIEW
M
BC
H
G
D
K
D
GS
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage BVDSS 50 75 ¾VVGS = 0V, ID = 250mA
Zero Gate Voltage Drain Current IDSS ¾¾0.5 µA VDS = 50V, VGS = 0V
Gate-Body Leakage IGSS ¾¾±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(th) 0.5 1.2 1.5 V VDS =V
GS, ID = 250mA
Static Drain-Source On-Resistance RDS (ON) ¾1.4 3.5 WVGS = 10V, ID = 0.22A
Forward Transconductance gFS 100 ¾¾mS VDS = 25V, ID = 0.2A, f = 1.0KHz
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ¾¾50 pF
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ¾¾25 pF
Reverse Transfer Capacitance Crss ¾¾8.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) ¾¾20 ns VDD = 30V, ID = 0.2A,
RGEN = 50W
Turn-Off Delay Time tD(OFF) ¾¾20 ns
Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
Source
Gate
ra
n
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.085 0.180
a0°8°
All Dimensions in mm
BSS138
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
·Low On-Resistance
·Low Gate Threshold Voltage
·Low Input Capacitance
·Fast Switching Speed
·Low Input/Output Leakage
·Available in Lead Free/RoHS Compliant Version (Note 3)