SPICE Device Model Si2301DS
Vishay Siliconix
www.vishay.com Docu ment Number: 70982
217-Apr-01
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions Typical Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 µA0.92 V
VDS ≤ −5 V, VGS = −4.5 V 34
On-State Drain CurrentaID(on) VDS ≤ −5 V, VGS = −2.5 V 8.6 A
VGS = −4.5 V, ID = −2.8 A 0.095
Drain-Source On-State ResistancearDS(on) VGS = −2.5 V, ID = −2.0 A 0.133 Ω
Forward Transconductanceagfs VDS = −5 V, ID = −2.8 A 6.5 S
Diode Forward Voltage VSD IS = −1.6 A, VGS = 0 V 0.80 V
Dynamicb
Total Gate Charge Qg5.3
Gate-Source Charge Qgs 0.85
Gate-Drain Charge Qgd
VDS = −6 V, VGS = −4.5 V, ID = −2.8 A
1.70
nC
Input Capacitance Ciss 426
Output Capacitance Coss 228
Reverse Transfer Capacitance Crss
VGS = −6 V, VGS = 0 V, f = 1 MHz
98
pf
Switchingc
Turn-On Delay Time td(on) 15
Rise Time tr20
Turn-Off Delay Time td(off) 32
Fall Time tf
VDD = −6 V, RL = 6 Ω
ID ≅ −1 A, VGEN = −4.5 V, RG = 6 Ω
41
ns
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%
b. For design aid only, not subject to production testing
c. Switching time is essentially indepenednt of operating temperature