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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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FQD1N60C / FQU1N60C — N-Channel QFET® MOSFET
www.onsemi.com
Semiconductor Components Industries, LLC, 2017 Publication Order Number:
May, 2017, Rev.1.5 FQD1N60C / FQU1N60C
1
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FQD1N60CTM / FQU1N60CTU Unit
VDSS Drain-Source Voltage 600 V
ID
Drain Current - Continuous (TC = 25°C) 1A
- Continuous (TC = 100°C) 0.6 A
IDM Drain Current - Pulsed (Note 1) 4A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 33 mJ
IAR Avalanche Current (Note 1) 1A
EAR Repetitive Avalanche Energy (Note 1) 2.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD
Power Dissipation (TA = 25°C)* 2.5 W
Power Dissipation (TC = 25°C) 28 W
- Derate Above 25°C 0.22 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TLMaximum Lead Temperature for Soldering,
1/8’’ from Case for 5 Seconds 300 °C
Symbol Parameter FQD1N60CTM /
FQU1N60CTU Unit
RθJC Thermal Resistance, Junction-to-Case, Max. 4.53
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient (Minimum Pad of 2-oz Copper), Max. 110
Thermal Resistance, Junction-to-Ambient (*1 in2 Pad of 2-oz Copper), Max. 50
FQD1N60C / FQU1N60C
N-Channel QFET® MOSFET
600 V, 1.0 A, 11.5 Ω
Features
• 1 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V,
ID = 0.5 A
• Low Gate Charge (Typ. 4.8 nC)
• Low Crss (Typ. 3.5 pF)
• 100% Avalanche Tested
• RoHS Compliant
Description
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
GDS
I-PAK
D-PAK
G
S
D
G
S
D
FQD1N60C / FQU1N60C — N-Channel QFET® MOSFET
www.onsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted.
Notes:
1. Repetitive Rating : pulse-width limited by maximum junction temperature.
2. L = 59 mH, IAS = 1.1 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 1.1 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FQD1N60CTM FQD1N60C D-PAK Tape and Reel 330 mm 16mm 2500 units
FQU1N60CTU FQU1N60C I-PAK Tube N/A N/A 70 units
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA600 -- -- V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, Referenced to 25°C -- 0.6 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 μA
VDS = 480 V, TC = 125°C -- -- 10 μA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA2.0 -- 4.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 0.5 A -- 9.3 11.5 Ω
gFS Forward Transconductance VDS = 40 V, ID = 0.5 A -- 0.75 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 130 170 pF
Coss Output Capacitance -- 19 25 pF
Crss Reverse Transfer Capacitance -- 3.5 4.5 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 300 V, ID = 1.1 A,
RG = 25 Ω
(Note 4)
-- 7 24 ns
trTurn-On Rise Time -- 21 52 ns
td(off) Turn-Off Delay Time -- 13 36 ns
tfTurn-Off Fall Time -- 27 64 ns
QgTotal Gate Charge VDS = 480 V, ID = 1.1 A,
VGS = 10 V
(Note 4)
-- 4.8 6.2 nC
Qgs Gate-Source Charge -- 0.7 -- nC
Qgd Gate-Drain Charge -- 2.7 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 1 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 4 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 1.1 A,
dIF / dt = 100 A/μs
-- 190 -- ns
Qrr Reverse Recovery Charge -- 0.53 -- μC
FQD1N60C / FQU1N60C — N-Channel QFET® MOSFET
www.onsemi.com
3
Typical Characteristics
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10-1 100101
10-2
10-1
100
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Notes :∝
1. 250レs Pulse Test
2. TC
= 25∩
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
246810
10-1
100
150oC
25oC
-55oC
Notes :∝
1. VDS = 40V
2. 250レs Pulse Test
ID, Drain Current [A]
VGS, Gate-Source Voltage [V]
0.0 0.5 1.0 1.5 2.0 2.5
0
5
10
15
20
25
30
VGS = 20V
VGS = 10V
Note : T∝J = 25∩
RDS(ON) [ヘ],
Drain-Source On-Resistance
ID
, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10-1
100
150∩
Notes :
∝
1. VGS = 0V
2. 250
レ
s Pulse Test
25∩
IDR, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
0123456
0
2
4
6
8
10
12
VDS = 300V
VDS = 120V
VDS = 480V
Note : I∝D
= 1A
VGS, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
10-1 100101
0
50
100
150
200
250 C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
Notes ;∝
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
FQD1N60C / FQU1N60C — N-Channel QFET® MOSFET
www.onsemi.com
4
Typical Characteristics (Continued)
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs Case Temperature
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :∝
1. VGS = 0 V
2. ID
= 250 レA
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [o
C]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :∝
1. VGS = 10 V
2. ID
= 0.5 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [o
C]
Figure 11. Transient Thermal Response Curve
10-5 10-4 10-3 10-2 10-1 100101
10-1
100
Notes :∝
1. ZヨJC(t) = 4.53 ∩/W M a x .
2. Duty Factor, D = t1/t2
3. TJM - TC = PDM * ZヨJC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZヨJC
(t), Thermal Response
t1, Square Wave Pulse Duration [sec]
t1
PDM
t2
25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
ID, Drain Current [A]
TC
, Case Temperature [∩]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
ZθJC(t), Thermal Response [oC/W]
FQD1N60C / FQU1N60C — N-Channel QFET® MOSFET
www.onsemi.com
5
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
VGS
VGS
IG = const.
FQD1N60C / FQU1N60C — N-Channel QFET® MOSFET
www.onsemi.com
6
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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