VTT
LP2997
PVIN
VDDQ
VREF
AVIN
VREF =0.9V
VSENSE
GND
++
+
AVIN = 2.5V
VTT
= 0.9V
SD
SD
VDDQ = 1.8V
CIN COUT
CREF
LP2997
www.ti.com
SNVS295F –MAY 2004–REVISED APRIL 2013
LP2997 DDR-II Termination Regulator
Check for Samples: LP2997
1FEATURES DESCRIPTION
The LP2997 linear regulator is designed to meet the
2• Source and Sink Current JEDEC SSTL-18 specifications for termination of
• Low Output Voltage Offset DDR-II memory. The device contains a high-speed
• No External Resistors Required operational amplifier to provide excellent response to
load transients. The output stage prevents shoot
• Linear Topology through while delivering 500mA continuous current
• Suspend to Ram (STR) Functionality and transient peaks up to 900mA in the application as
• Low External Component Count required for DDR-II SDRAM termination. The LP2997
also incorporates a VSENSE pin to provide superior
• Thermal Shutdown load regulation and a VREF output as a reference for
• Available in SOIC-8, SO PowerPAD-8 Packages the chipset and DIMMs.
An additional feature found on the LP2997 is an
APPLICATIONS active low shutdown (SD) pin that provides Suspend
• DDR-II Termination Voltage To RAM (STR) functionality. When SD is pulled low
• SSTL-18 Termination the VTT output will tri-state providing a high
impedance output, but, VREF will remain active. A
power savings advantage can be obtained in this
mode through lower quiescent current.
Typical Application Circuit
Figure 1. Typical Application Circuit
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 2004–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
VDDQ
PVIN
AVIN
1
2
3
4
8
7
6
5
VSENSE
VREF
SD
GND VTT
GND
VDDQ
PVIN
AVIN
1
2
3
4
8
7
6
5
VSENSE
VREF
SD
GND VTT
LP2997
SNVS295F –MAY 2004–REVISED APRIL 2013
www.ti.com
Connection Diagram
Figure 2. SO PowerPAD-8 Layout Figure 3. SOIC-8 Layout
See Package Number DDA (R-PDSO-G8) See Package Number D0008A
PIN DESCRIPTIONS
SOIC-8 Pin or Name Function
SO PowerPAD-8 Pin
1 GND Ground
2 SD Shutdown
3 VSENSE Feedback pin for regulating VTT.
4 VREF Buffered internal reference voltage of VDDQ/2
5 VDDQ Input for internal reference equal to VDDQ/2
6 AVIN Analog input pin
7 PVIN Power input pin
8 VTT Output voltage for connection to termination resistors
EP Exposed pad thermal connection Connect to Ground
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings(1)(2)
AVIN to GND −0.3V to +6V
PVIN to GND -0.3V to AVIN
VDDQ(3) −0.3V to +6V
Storage Temp. Range −65°C to +150°C
Junction Temperature 150°C
Lead Temperature (Soldering, 10 sec) 260°C
SOIC-8 Thermal Resistance (θJA) 151°C/W
SO PowerPAD-8 Thermal Resistance (θJA) 43°C/W
Minimum ESD Rating(4) 1kV
(1) Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating range indicates conditions for which
the device is intended to be functional, but does not ensure specific performance limits. For specific specifications and test conditions
see Electrical Characteristics. The specified specifications apply only for the test conditions listed. Some performance characteristics
may degrade when the device is not operated under the listed test conditions.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) VDDQ voltage must be less than 2 x (AVIN - 1) or 6V, whichever is smaller.
(4) The human body model is a 100pF capacitor discharged through a 1.5kΩresistor into each pin.
Operating Range
Junction Temp. Range(1) 0°C to +125°C
AVIN to GND 2.2V to 5.5V
(1) At elevated temperatures, devices must be derated based on thermal resistance. The device in the SOIC-8 package must be derated at
θJA = 151.2° C/W junction to ambient with no heat sink.
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Electrical Characteristics
Specifications with standard typeface are for TJ= 25°C and limits in boldface type apply over the full Operating
Temperature Range (TJ= 0°C to +125°C)(1). Unless otherwise specified, AVIN = 2.5V, PVIN = 1.8V, VDDQ = 1.8V.
Symbol Parameter Conditions Min Typ Max Units
VREF VREF Voltage PVIN = VDDQ = 1.7V 0.837 0.860 0.887
PVIN = VDDQ = 1.8V 0.887 0.910 0.937 V
PVIN = VDDQ = 1.9V 0.936 0.959 0.986
ZVREF VREF Output Impedance IREF = -30 to +30 μA 2.5 kΩ
VTT VTT Output Voltage IOUT = 0A
PVIN = VDDQ = 1.7V 0.822 0.856 0.887
PVIN = VDDQ = 1.8V 0.874 0.908 0.939
PVIN = VDDQ = 1.9V 0.923 0.957 0.988 V
IOUT = ±0.5A(2)
PVIN = VDDQ = 1.7V 0.828 0.856 0.890
PVIN = VDDQ = 1.8V 0.878 0.908 0.940
PVIN = VDDQ = 1.9V 0.928 0.957 0.990
VosTT/VTT VTT Output Voltage Offset IOUT = 0A -25 025
(VREF-VTT) IOUT = -0.5A -25 025 mV
IOUT = +0.5A -25 025
IQQuiescent Current(3) IOUT = 0A(3) 320 500 µA
ZVDDQ VDDQ Input Impedance 100 kΩ
ISD Quiescent Current in SD = 0V 115 150 µA
Shutdown(3)
IQ_SD Shutdown Leakage Current SD = 0V 2 5µA
VIH Minimum Shutdown High 1.9 V
Level
VIL Maximum Shutdown Low 0.8 V
Level
ISENSE VSENSE Input Current 13 nA
TSD Thermal Shutdown See(4) 165 Celsius
TSD_HYS Thermal Shutdown 10 Celsius
Hysteresis
(1) Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlation using
Statistical Quality Control (SQC) methods. The limits are used to calculate Average Outgoing Quality Level (AOQL).
(2) VTT load regulation is tested by using a 10 ms current pulse and measuring VTT.
(3) Quiescent current defined as the current flow into AVIN.
(4) The maximum allowable power dissipation is a function of the maximum junction temperature, TJ(MAX), the junction to ambient thermal
resistance, θJA, and the ambient temperature, TA. Exceeding the maximum allowable power dissipation will cause excessive die
temperature and the regulator will go into thermal shutdown.
Copyright © 2004–2013, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Links: LP2997
0 1 2 3 4 5 6
VDDQ (V)
0
0.5
1
1.5
2
2.5
3
VTT (V)
2 2.5 3 3.5 4 4.5 5 5.5
AVIN (V)
50
100
150
200
250
300
350
400
IQ (uA)
0oC
125oC
2 2.5 3 3.5 4 4.5 5 5.5
AVIN (V)
0.5
1
1.5
2
2.5
3
3.5
4
VSD (V)
0 1 2 3 4 5 6
VDDQ (V)
0
0.5
1
1.5
2
2.5
3
VREF (V)
2 2.5 3 3.5 4 4.5 5 5.5
AVIN (V)
50
100
150
200
250
300
350
400
IQ (uA)
2 2.5 3 3.5 4 4.5 5 5.5
AVIN (V)
0
150
300
450
600
750
900
1050
IQ (uA)
LP2997
SNVS295F –MAY 2004–REVISED APRIL 2013
www.ti.com
Typical Performance Characteristics
Iq vs AVIN in SD Iq vs AVIN
Figure 4. Figure 5.
VIH and VIL VREF vs VDDQ
Figure 6. Figure 7.
VTT vs VDDQ Iq vs AVIN in SD Temperature
Figure 8. Figure 9.
4Submit Documentation Feedback Copyright © 2004–2013, Texas Instruments Incorporated
Product Folder Links: LP2997
-
+
VTT
PVIN
VDDQ
SD
GND
AVIN
VSENSE
50k
50k
+
-
VREF
2 2.5 3 3.5 4 4.5 5 5.5
AVIN (V)
1
1.2
1.4
1.6
1.8
2
2.2
2.4
OUTPUT CURRENT (A)
2 2.5 3 3.5 4 4.5 5 5.5
AVIN (V)
0
150
300
450
600
750
900
1050
IQ (uA)
0oC
25oC
85oC
2 2.5 3 3.5 4 4.5 5 5.5
AVIN (V)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
OUTPUT CURRENT (A)
LP2997
www.ti.com
SNVS295F –MAY 2004–REVISED APRIL 2013
Typical Performance Characteristics (continued)
Maximum Sourcing Current vs AVIN
Iq vs AVIN Temperature (VDDQ = 1.8V, PVIN = 1.8V)
Figure 10. Figure 11.
Maximum Sinking Current vs AVIN
(VDDQ = 1.8V)
Figure 12.
Block Diagram
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LP2997
SNVS295F –MAY 2004–REVISED APRIL 2013
www.ti.com
DESCRIPTION
The LP2997 is a linear bus termination regulator designed to meet the JEDEC requirements of SSTL-18. The
output, VTT is capable of sinking and sourcing current while regulating the output voltage equal to VDDQ / 2. The
output stage has been designed to maintain excellent load regulation while preventing shoot through. The
LP2997 also incorporates two distinct power rails that separates the analog circuitry from the power output stage.
This allows a split rail approach to be utilized to decrease internal power dissipation. It also permits the LP2997
to provide a termination solution for the next generation of DDR-SDRAM memory (DDRII).
Pin Descriptions
AVIN AND PVIN AVIN and PVIN are the input supply pins for the LP2997. AVIN is used to supply all the internal control circuitry. PVIN,
however, is used exclusively to provide the rail voltage for the output stage used to create VTT. These pins have the capability to work off
separate supplies, under the condition that AVIN is always greater than or equal to PVIN. For SSTL-18 applications, it is recommended to
connect PVIN to the 1.8V rail used for the memory core and AVIN to a rail within its operating range of 2.2V to 5.5V (typically a 2.5V
supply). PVIN should always be used with either a 1.8V or 2.5V rail. This prevents the thermal limit from tripping because of excessive
internal power dissipation. If the junction temperature exceeds the thermal shutdown than the part will enter a shutdown state identical to
the manual shutdown where VTT is tri-stated and VREF remains active. A lower rail such as 1.5V can be used but it will reduce the maximum
output current, therefore it is not recommended for most termination schemes.
VDDQ VDDQ is the input used to create the internal reference voltage for regulating VTT. The reference voltage is generated from a resistor
divider of two internal 50kΩresistors. This ensures that VTT will track VDDQ / 2 precisely. The optimal implementation of VDDQ is as a
remote sense. This can be achieved by connecting VDDQ directly to the 1.8V rail at the DIMM instead of PVIN. This ensures that the
reference voltage tracks the DDR memory rails precisely without a large voltage drop from the power lines. For SSTL-18 applications
VDDQ will be a 1.8V signal, which will create a 0.9V termination voltage at VTT (See Electrical Characteristics Table for exact values of VTT
over temperature).
VSENSE The purpose of the sense pin is to provide improved remote load regulation. In most motherboard applications the termination
resistors will connect to VTT in a long plane. If the output voltage was regulated only at the output of the LP2997 then the long trace will
cause a significant IR drop resulting in a termination voltage lower at one end of the bus than the other. The VSENSE pin can be used to
improve this performance, by connecting it to the middle of the bus. This will provide a better distribution across the entire termination bus.
If remote load regulation is not used then the VSENSE pin must still be connected to VTT. Care should be taken when a long VSENSE trace is
implemented in close proximity to the memory. Noise pickup in the VSENSE trace can cause problems with precise regulation of VTT. A small
0.1uF ceramic capacitor placed next to the VSENSE pin can help filter any high frequency signals and preventing errors.
SHUTDOWN The LP2997 contains an active low shutdown pin that can be used for suspend to RAM functionality. In this condition the VTT
output will tri-state while the VREF output remains active providing a constant reference signal for the memory and chipset. During shutdown
VTT should not be exposed to voltages that exceed PVIN. With the shutdown pin asserted low the quiescent current of the LP2997 will drop,
however, VDDQ will always maintain its constant impedance of 100kΩfor generating the internal reference. Therefore, to calculate the total
power loss in shutdown both currents need to be considered. For more information refer to the Thermal Dissipation section. The shutdown
pin also has an internal pull-up current; therefore, to turn the part on the shutdown pin can either be connected to AVIN or left open
VREF VREF provides the buffered output of the internal reference voltage VDDQ / 2. This output should be used to provide the reference
voltage for the Northbridge chipset and memory. Since these inputs are typically an extremely high impedance, there should be little current
drawn from VREF. For improved performance, an output bypass capacitor can be used, located close to the pin, to help with noise. A
ceramic capacitor in the range of 0.1 µF to 0.01 µF is recommended. This output remains active during the shutdown state and thermal
shutdown events for the suspend to RAM functionality.
VTT VTT is the regulated output that is used to terminate the bus resistors. It is capable of sinking and sourcing current while regulating the
output precisely to VDDQ / 2. The LP2997 is designed to handle continuous currents of up to +/- 0.5A with excellent load regulation. If a
transient is expected to last above the maximum continuous current rating for a significant amount of time, then the bulk output capacitor
should be sized large enough to prevent an excessive voltage drop. If the LP2997 is to operate in elevated temperatures for long durations
care should be taken to ensure that the maximum junction temperature is not exceeded. Proper thermal de-rating should always be used.
(Please refer to the Thermal Dissipation section) If the junction temperature exceeds the thermal shutdown point than VTT will tri-state until
the part returns below the temperature hysteresis trip-point
COMPONENT SELECTIONS
INPUT CAPACITOR
The LP2997 does not require a capacitor for input stability, but it is recommended for improved performance
during large load transients to prevent the input rail from dropping. The input capacitor should be located as
close as possible to the PVIN pin. Several recommendations exist dependent on the application required. A
typical value recommended for AL electrolytic capacitors is 22 µF. Ceramic capacitors can also be used. A value
in the range of 10 µF with X5R or better would be an ideal choice. The input capacitance can be reduced if the
LP2997 is placed close to the bulk capacitance from the output of the 1.8V DC-DC converter. For the AVIN pin, a
small 0.1uF ceramic capacitor is sufficient to prevent excessive noise from coupling into the device.
6Submit Documentation Feedback Copyright © 2004–2013, Texas Instruments Incorporated
Product Folder Links: LP2997
0 200 400 600 800 1000
TJA
AIRFLOW (Linear Feet per Minute)
SOP Board
JEDEC Board
150
160
140
170
180
100
110
120
130
80
90
LP2997
www.ti.com
SNVS295F –MAY 2004–REVISED APRIL 2013
OUTPUT CAPACITOR
The LP2997 has been designed to be insensitive of output capacitor size or ESR (Equivalent Series Resistance).
This allows the flexibility to use any capacitor desired. The choice for output capacitor will be determined solely
on the application and the requirements for load transient response of VTT. As a general recommendation the
output capacitor should be sized above 100 µF with a low ESR for SSTL applications with DDR-SDRAM. The
value of ESR should be determined by the maximum current spikes expected and the extent at which the output
voltage is allowed to droop. Several capacitor options are available on the market and a few of these are
highlighted below:
AL - It should be noted that many aluminum electrolytics only specify impedance at a frequency of 120 Hz, which
indicates they have poor high frequency performance. Only aluminum electrolytics that have an impedance
specified at a higher frequency (100 kHz) should be used for the LP2997. To improve the ESR several AL
electrolytics can be combined in parallel for an overall reduction. An important note to be aware of is the extent
at which the ESR will change over temperature. Aluminum electrolytic capacitors can have their ESR rapidly
increase at cold temperatures.
Ceramic - Ceramic capacitors typically have a low capacitance, in the range of 10 to 100 µF range, but they have
excellent AC performance for bypassing noise because of very low ESR (typically less than 10 mΩ). However,
some dielectric types do not have good capacitance characteristics as a function of voltage and temperature.
Because of the typically low value of capacitance it is recommended to use ceramic capacitors in parallel with
another capacitor such as an aluminum electrolytic. A dielectric of X5R or better is recommended for all ceramic
capacitors.
Hybrid - Several hybrid capacitors such as OS-CON and SP are available from several manufacturers. These
offer a large capacitance while maintaining a low ESR. These are the best solution when size and performance
are critical, although their cost is typically higher than any other capacitors.
Thermal Dissipation
Since the LP2997 is a linear regulator any current flow from VTT will result in internal power dissipation
generating heat. To prevent damaging the part from exceeding the maximum allowable junction temperature,
care should be taken to derate the part dependent on the maximum expected ambient temperature and power
dissipation. The maximum allowable internal temperature rise (TRmax) can be calculated given the maximum
ambient temperature (TAmax) of the application and the maximum allowable junction temperature (TJmax).
TRmax = TJmax −TAmax (1)
From this equation, the maximum power dissipation (PDmax) of the part can be calculated:
PDmax = TRmax /θJA (2)
The θJA of the LP2997 will be dependent on several variables: the package used; the thickness of copper; the
number of vias and the airflow. For instance, the θJA of the SOIC-8 is 163°C/W with the package mounted to a
standard 8x4 2-layer board with 1oz. copper, no airflow, and 0.5W dissipation at room temperature. This value
can be reduced to 151.2°C/W by changing to a 3x4 board with 2 oz. copper that is the JEDEC standard.
Figure 13 shows how the θJA varies with airflow for the two boards mentioned.
Figure 13. θJA vs Airflow (SOIC-8)
Copyright © 2004–2013, Texas Instruments Incorporated Submit Documentation Feedback 7
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VTT
LP2997
PVIN
VDD
Q
VREF
AVIN
VREF =0.9V
VSENSE
GND
++
+
AVIN = 2.5V
VTT =0.9V
SD
SD
VDD
Q = 1.8V
7P F
0.01 PF
P
22
0 F
LP2997
SNVS295F –MAY 2004–REVISED APRIL 2013
www.ti.com
Additional improvements can be made by the judicious use of vias to connect the part and dissipate heat to an
internal ground plane. Using larger traces and more copper on the top side of the board can also help. With
careful layout it is possible to reduce the θJA further than the nominal values shown in Figure 13.
Optimizing the θJA and placing the LP2997 in a section of a board exposed to lower ambient temperature allows
the part to operate with higher power dissipation. The internal power dissipation can be calculated by summing
the three main sources of loss: output current at VTT, either sinking or sourcing, and quiescent current at AVIN
and VDDQ. During the active state (when shutdown is not held low) the total internal power dissipation can be
calculated from the following equations:
PD= PAVIN + PVDDQ + PVTT (3)
Where,
PAVIN = IAVIN * VAVIN (4)
PVDDQ = VVDDQ * IVDDQ = VVDDQ2x RVDDQ (5)
To calculate the maximum power dissipation at VTT both conditions at VTT need to be examined, sinking and
sourcing current. Although only one equation will add into the total, VTT cannot source and sink current
simultaneously.
PVTT = VVTT x ILOAD (Sinking) or (6)
PVTT = ( VPVIN - VVTT) x ILOAD (Sourcing) (7)
The power dissipation of the LP2997 can also be calculated during the shutdown state. During this condition the
output VTT will tri-state, therefore that term in the power equation will disappear as it cannot sink or source any
current (leakage is negligible). The only losses during shutdown will be the reduced quiescent current at AVIN
and the constant impedance that is seen at the VDDQ pin.
PD= PAVIN + PVDDQ (8)
PAVIN = IAVIN x VAVIN (9)
PVDDQ = VVDDQ * IVDDQ = VVDDQ2x RVDDQ (10)
Typical Application Circuits
Several different application circuits have been shown to illustrate some of the options that are possible in
configuring the LP2997. Graphs of the individual circuit performance can be found in the Typical Performance
Characteristics section in the beginning of the datasheet. These curves illustrate how the maximum output
current is affected by changes in AVIN and PVIN.
Figure 14 shows the recommended circuit configuration for DDR-II applications. The output stage is connected to
the 1.8V rail and the AVIN pin can be connected to either a 2.5V, 3.3V or 5V rail.
This circuit permits termination in a minimum amount of board space and component count. Capacitor selection
can be varied depending on the number of lines terminated and the maximum load transient. However, with
motherboards and other applications where VTT is distributed across a long plane it is advisable to use multiple
bulk capacitors and addition to high frequency decoupling. The bulk output capacitors should be situated at both
ends of the VTT plane for optimal placement. Large aluminum electrolytic capacitors are used for their low ESR
and low cost.
Figure 14. Recommended DDR-II Termination
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SNVS295F –MAY 2004–REVISED APRIL 2013
PCB Layout Considerations
1. The input capacitor for the power rail should be placed as close as possible to the PVIN pin.
2. VSENSE should be connected to the VTT termination bus at the point where regulation is required. For
motherboard applications an ideal location would be at the center of the termination bus.
3. VDDQ can be connected remotely to the VDDQ rail input at either the DIMM or the Chipset. This provides the
most accurate point for creating the reference voltage.
4. For improved thermal performance excessive top side copper should be used to dissipate heat from the
package. Numerous vias from the ground connection to the internal ground plane will help. Additionally these
can be located underneath the package if manufacturing standards permit.
5. Care should be taken when routing the VSENSE trace to avoid noise pickup from switching I/O signals. A
0.1uF ceramic capacitor located close to the SENSE can also be used to filter any unwanted high frequency
signal. This can be an issue especially if long SENSE traces are used.
6. VREF should be bypassed with a 0.01 µF or 0.1 µF ceramic capacitor for improved performance. This
capacitor should be located as close as possible to the VREF pin.
Copyright © 2004–2013, Texas Instruments Incorporated Submit Documentation Feedback 9
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LP2997
SNVS295F –MAY 2004–REVISED APRIL 2013
www.ti.com
REVISION HISTORY
Changes from Revision E (April 2013) to Revision F Page
• Changed layout of National Data Sheet to TI format ............................................................................................................ 9
10 Submit Documentation Feedback Copyright © 2004–2013, Texas Instruments Incorporated
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PACKAGE OPTION ADDENDUM
www.ti.com 11-Jan-2021
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead finish/
Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
LP2997M NRND SOIC D 8 95 Non-RoHS
& Green Call TI Call TI 0 to 125 L2997
M
LP2997M/NOPB ACTIVE SOIC D 8 95 RoHS & Green SN Level-1-260C-UNLIM 0 to 125 L2997
M
LP2997MR NRND SO PowerPAD DDA 8 95 Non-RoHS
& Green Call TI Call TI 0 to 125 L2997
MR
LP2997MR/NOPB ACTIVE SO PowerPAD DDA 8 95 RoHS & Green SN Level-3-260C-168 HR 0 to 125 L2997
MR
LP2997MRX/NOPB ACTIVE SO PowerPAD DDA 8 2500 RoHS & Green SN Level-3-260C-168 HR 0 to 125 L2997
MR
LP2997MX/NOPB ACTIVE SOIC D 8 2500 RoHS & Green SN Level-1-260C-UNLIM 0 to 125 L2997
M
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
PACKAGE OPTION ADDENDUM
www.ti.com 11-Jan-2021
Addendum-Page 2
(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
LP2997MRX/NOPB SO
Power
PAD
DDA 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
LP2997MX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 24-Aug-2017
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LP2997MRX/NOPB SO PowerPAD DDA 8 2500 367.0 367.0 35.0
LP2997MX/NOPB SOIC D 8 2500 367.0 367.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 24-Aug-2017
Pack Materials-Page 2
www.ti.com
PACKAGE OUTLINE
C
TYP
6.2
5.8
1.7 MAX
6X 1.27
8X 0.51
0.31
2X
3.81
TYP
0.25
0.10
0 - 8
0.15
0.00
2.34
2.24
2.34
2.24
0.25
GAGE PLANE
1.27
0.40
A
NOTE 3
5.0
4.8
B4.0
3.8
4218825/A 05/2016
PowerPAD SOIC - 1.7 mm max heightDDA0008A
PLASTIC SMALL OUTLINE
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.
5. Reference JEDEC registration MS-012.
PowerPAD is a trademark of Texas Instruments.
TM
18
0.25 C A B
5
4
PIN 1 ID
AREA
NOTE 4
SEATING PLANE
0.1 C
SEE DETAIL A
DETAIL A
TYPICAL
SCALE 2.400
EXPOSED
THERMAL PAD
4
1
5
8
www.ti.com
EXAMPLE BOARD LAYOUT
(5.4)
(1.3) TYP
( ) TYP
VIA
0.2
(R ) TYP0.05
0.07 MAX
ALL AROUND
0.07 MIN
ALL AROUND
8X (1.55)
8X (0.6)
6X (1.27)
(2.95)
NOTE 9
(4.9)
NOTE 9
(2.34)
(2.34)
SOLDER MASK
OPENING
(1.3)
TYP
4218825/A 05/2016
PowerPAD SOIC - 1.7 mm max heightDDA0008A
PLASTIC SMALL OUTLINE
SYMM
SYMM
SEE DETAILS
LAND PATTERN EXAMPLE
SCALE:10X
1
45
8
SOLDER MASK
OPENING
METAL COVERED
BY SOLDER MASK
SOLDER MASK
DEFINED PAD
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
8. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
numbers SLMA002 (www.ti.com/lit/slma002) and SLMA004 (www.ti.com/lit/slma004).
9. Size of metal pad may vary due to creepage requirement.
10. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
TM
METAL
SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
OPENING
SOLDER MASK METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
www.ti.com
EXAMPLE STENCIL DESIGN
(R ) TYP0.05
8X (1.55)
8X (0.6)
6X (1.27)
(5.4)
(2.34)
(2.34)
BASED ON
0.125 THICK
STENCIL
4218825/A 05/2016
PowerPAD SOIC - 1.7 mm max heightDDA0008A
PLASTIC SMALL OUTLINE
1.98 X 1.980.175
2.14 X 2.140.150
2.34 X 2.34 (SHOWN)0.125
2.62 X 2.620.1
SOLDER STENCIL
OPENING
STENCIL
THICKNESS
NOTES: (continued)
11. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
12. Board assembly site may have different recommendations for stencil design.
TM
SOLDER PASTE EXAMPLE
EXPOSED PAD
100% PRINTED SOLDER COVERAGE BY AREA
SCALE:10X
SYMM
SYMM
1
45
8
BASED ON
0.125 THICK
STENCIL
BY SOLDER MASK
METAL COVERED SEE TABLE FOR
DIFFERENT OPENINGS
FOR OTHER STENCIL
THICKNESSES
www.ti.com
PACKAGE OUTLINE
C
.228-.244 TYP
[5.80-6.19]
.069 MAX
[1.75]
6X .050
[1.27]
8X .012-.020
[0.31-0.51]
2X
.150
[3.81]
.005-.010 TYP
[0.13-0.25]
0 - 8 .004-.010
[0.11-0.25]
.010
[0.25]
.016-.050
[0.41-1.27]
4X (0 -15 )
A
.189-.197
[4.81-5.00]
NOTE 3
B .150-.157
[3.81-3.98]
NOTE 4
4X (0 -15 )
(.041)
[1.04]
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
18
.010 [0.25] C A B
5
4
PIN 1 ID AREA
SEATING PLANE
.004 [0.1] C
SEE DETAIL A
DETAIL A
TYPICAL
SCALE 2.800
www.ti.com
EXAMPLE BOARD LAYOUT
.0028 MAX
[0.07]
ALL AROUND
.0028 MIN
[0.07]
ALL AROUND
(.213)
[5.4]
6X (.050 )
[1.27]
8X (.061 )
[1.55]
8X (.024)
[0.6]
(R.002 ) TYP
[0.05]
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
4214825/C 02/2019
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
METAL SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
EXPOSED
METAL
OPENING
SOLDER MASK METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
EXPOSED
METAL
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:8X
SYMM
1
45
8
SEE
DETAILS
SYMM
www.ti.com
EXAMPLE STENCIL DESIGN
8X (.061 )
[1.55]
8X (.024)
[0.6]
6X (.050 )
[1.27] (.213)
[5.4]
(R.002 ) TYP
[0.05]
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
SOLDER PASTE EXAMPLE
BASED ON .005 INCH [0.125 MM] THICK STENCIL
SCALE:8X
SYMM
SYMM
1
45
8
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