TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors Designed for general-purpose power amplifier and switching applications. Features * 25 A Collector Current * Low Leakage Current - ICEO = 1.0 mA @ 30 and 60 V http://onsemi.com 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS, 125 WATTS * Excellent DC Gain - hFE = 40 Typ @ 15 A * High Current Gain Bandwidth Product - * hfe = 3.0 min @ IC = 1.0 A, f = 1.0 MHz These are Pb-Free Devices* SOT-93 (TO-218) CASE 340D STYLE 1 MAXIMUM RATINGS Rating Symbol TIP35A TIP36A TIP35B TIP36B TIP35C TIP36C Unit Collector - Emitter Voltage VCEO 60 80 100 Vdc Collector - Base Voltage VCB 60 80 100 Vdc Emitter - Base Voltage VEB Collector Current - Continuous - Peak (Note 1) IC 5.0 IB 5.0 Total Power Dissipation @ TC = 25_C Derate above 25_C PD 125 TJ, Tstg -65 to +150 Unclamped Inductive Load ESB Adc 25 40 Base Current - Continuous Operating and Storage Junction Temperature Range Vdc Adc W W/_C _C 90 mJ Symbol Max Unit Thermal Resistance, Junction-to-Case RqJC 1.0 C/W Junction-To-Free-Air Thermal Resistance RqJA 35.7 C/W THERMAL CHARACTERISTICS Characteristic TO-247 CASE 340L STYLE 3 NOTE: Effective June 2012 this device will be available only in the TO-247 package. Reference FPCN# 16827. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 10 ms, Duty Cycle v 10%. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2012 May, 2012 - Rev. 6 1 Publication Order Number: TIP35/D TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) MARKING DIAGRAMS TO-247 TO-218 TIP3xx AYWWG AYWWG TIP3xx 1 BASE 3 EMITTER 1 BASE 2 COLLECTOR TIP3xx A Y WW G 3 EMITTER 2 COLLECTOR = = = = = Device Code Assembly Location Year Work Week Pb-Free Package ORDERING INFORMATION Device Package Shipping TIP35AG SOT-93 (TO-218) (Pb-Free) 30 Units / Rail TIP35BG SOT-93 (TO-218) (Pb-Free) 30 Units / Rail TIP35CG SOT-93 (TO-218) (Pb-Free) 30 Units / Rail TIP36AG SOT-93 (TO-218) (Pb-Free) 30 Units / Rail TIP36BG SOT-93 (TO-218) (Pb-Free) 30 Units / Rail TIP36CG SOT-93 (TO-218) (Pb-Free) 30 Units / Rail TIP35AG TO-247 (Pb-Free) 30 Units / Rail TIP35BG TO-247 (Pb-Free) 30 Units / Rail TIP35CG TO-247 (Pb-Free) 30 Units / Rail TIP36AG TO-247 (Pb-Free) 30 Units / Rail TIP36BG TO-247 (Pb-Free) 30 Units / Rail TIP36CG TO-247 (Pb-Free) 30 Units / Rail http://onsemi.com 2 TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 60 80 100 - - - - - 1.0 1.0 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 2) (IC = 30 mA, IB = 0) Collector-Emitter Cutoff Current (VCE = 30 V, IB = 0) (VCE = 60 V, IB = 0) TIP35A, TIP36A TIP35B, TIP36B TIP35C, TIP36C TIP35A, TIP36A TIP35B, TIP35C, TIP36B, TIP36C VCEO(sus) Vdc ICEO mA Collector-Emitter Cutoff Current (VCE = Rated VCEO, VEB = 0) ICES - 0.7 mA Emitter-Base Cutoff Current (VEB = 5.0 V, IC = 0) IEBO - 1.0 mA 25 15 - 75 - - 1.8 4.0 - - 2.0 4.0 ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 1.5 A, VCE = 4.0 V) (IC = 15 A, VCE = 4.0 V) hFE Collector-Emitter Saturation Voltage (IC = 15 A, IB = 1.5 A) (IC = 25 A, IB = 5.0 A) VCE(sat) Base-Emitter On Voltage (IC = 15 A, VCE = 4.0 V) (IC = 25 A, VCE = 4.0 V) VBE(on) - Vdc Vdc DYNAMIC CHARACTERISTICS Small-Signal Current Gain (IC = 1.0 A, VCE = 10 V, f = 1.0 kHz) hfe 25 - - Current-Gain -- Bandwidth Product (IC = 1.0 A, VCE = 10 V, f = 1.0 MHz) fT 3.0 - MHz 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. http://onsemi.com 3 TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) PD, POWER DISSIPATION (WATTS) 125 100 75 50 25 0 0 25 50 75 125 100 TC, CASE TEMPERATURE (C) 150 175 Figure 1. Power Derating VCC TURN-ON TIME RL +2.0 V 0 RB VCC TURN-OFF TIME +9.0 V RB -11.0 V 10 TO 100 mS DUTY CYCLE 2.0% tr 20 ns 10 to 100 ms DUTY CYCLE 2.0% FOR CURVES OF FIGURES 3 & 4, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN, REVERSE ALL POLARITIES. Figure 2. Switching Time Equivalent Test Circuits 2.0 TJ = 25C IC/IB = 10 VCC = 30 V VBE(off) = 2 V 1.0 t, TIME (s) 0.7 0.5 tr 0.2 0.1 (PNP) (NPN) td 0.07 0.05 0.03 0.02 0.3 0.5 0.7 1.0 5.0 7.0 10 2.0 3.0 IC, COLLECTOR CURRENT (AMPERES) Figure 3. Turn-On Time http://onsemi.com 4 20 30 VBB -30 V 3.0 TO SCOPE tr 20 ns 10 0 -11.0 V 0.3 RL 3.0 TO SCOPE tr 20 ns 10 tr 20 ns -30 V +4.0 V TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) 1000 (PNP) (NPN) 3.0 ts t, TIME (s) 2.0 500 200 TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 hFE , DC CURRENT GAIN 10 7.0 5.0 ts 1.0 0.7 0.5 tf 0.3 0.2 0.1 0.3 0.5 0.7 VCE = 4.0 V TJ = 25C 100 50 20 10 PNP NPN 5.0 tf 2.0 1.0 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 0.1 30 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMPS) 50 100 Figure 5. DC Current Gain Figure 4. Turn-Off Time FORWARD BIAS 100 IC, COLLECTOR CURRENT (AMPS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC w 25_C. Second breakdown limitations do not derate the same as thermal limitations. For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 7 gives RBSOA characteristics. TC = 25C 1.0ms 10 10ms 5.0 2.0 dc SECONDARY BREAKDOWN THERMAL LIMIT BONDING WIRE LIMIT 1.0 0.5 0.3 0.2 0 REVERSE BIAS 300ms 50 30 20 TIP35A, 36A TIP35B, 36B TIP35C, 36C 1.0 20 30 50 70 100 2.0 3.0 5.0 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Maximum Rated Forward Bias Safe Operating Area IC, COLLECTOR CURRENT (AMPS) 40 TJ 100C 30 25 20 TIP35C TIP36C 15 TIP35B TIP36B 10 TIP35A TIP36A 5.0 0 0 10 40 60 80 20 30 50 70 90 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Maximum Rated Forward Bias Safe Operating Area http://onsemi.com 5 100 TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) TEST CIRCUIT VCE MONITOR L1 (SEE NOTE A) RBB1 MJE180 TUT 20 INPUT L2 (SEE NOTE A) 50 RBB2 = 100 50 VCC = 10 V + IC MONITOR VBB2 = 0 RS = 0.1 W VBB1 = 10 V + VOLTAGE AND CURRENT WAVEFORMS tw = 6.0 ms (SEE NOTE B) 5.0 V INPUT VOLTAGE 0 100 ms COLLECTOR CURRENT 0 -3.0 A 0 -10 V COLLECTOR VOLTAGE V(BR)CER NOTES: A. L1 and L2 are 10 mH, 0.11 W, Chicago Standard Transformer Corporation C-2688, or equivalent. B. Input pulse width is increased until ICM = - 3.0 A. C. For NPN, reverse all polarities. Figure 8. Inductive Load Switching http://onsemi.com 6 TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) PACKAGE DIMENSIONS SOT-93 (TO-218) CASE 340D-02 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C Q B U DIM A B C D E G H J K L Q S U V 4 A L S E 1 K 2 3 J H D MILLIMETERS MIN MAX --20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF STYLE 1: PIN 1. 2. 3. 4. V G INCHES MIN MAX --0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 BASE COLLECTOR EMITTER COLLECTOR TO-247 CASE 340L-02 ISSUE F -T- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C -B- E U N L 4 A -Q- 1 2 0.63 (0.025) 3 P -Y- K F 2 PL W J D 3 PL 0.25 (0.010) M Y Q T B M STYLE 3: PIN 1. 2. 3. 4. H G M DIM A B C D E F G H J K L N P Q U W S http://onsemi.com 7 MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 8 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative TIP35/D