TOSHIBA MOS MEMORY PRODUCTS 16,384 WORD x 8 BIT UV ERASABLE AND ELECTRICALLY M271 28AD-1 5 M271 28AD-1 50 PROGRAMMABLE READ ONLY MEMORY N-CHANNEL SILICON STACKED GATE MOS TMM27128AD 20, TMM27128AD-200 DESCRIPTION The TMM27128AD is a 16,384 word x 8 bit ultra- violet light erasable and electrically programmable read only memory. For read operation, the TMM 27128AD's access time is 150ns/200ns, and the TMM27128AD operates from a single 5-volt power supply and has a low power standby mode which reduces the power dissipation without increasing access time. FEATURES [| -15 | -20 150 | 200 Vee 5V+5% V+ 10% | tacc 150ns_| 200ns | 150ns | 200ns | lece 100mA 120mA tees 30mA 35mA { PIN CONNECTION (TOP VIEW) The standby mode is achieved by applying a TTL- high level signal to the CE input. For program operation, the program is achieved by using the high speed programming mode. The TMM27128AD is fabricated with the N- channel silicon double ijayer gate MOS technolgy. @ Fully static operation @ High speed programming mode @ Single location programming @ Three state outputs @ Inputs and outputs TTL compatible Pin compatible with 127128A BLOCK DIAGRAM Vpp GND Veo Og 0) Og Og 04 05 06 OF Vppqg? nYce aed Faw wei ti ititiiit ae Of CE and POM Aggs DAIS cE CIRCUIT OUTPUT BUFFERS | Agq4 hAg POM T t 45g pAs as 6 | coLumn | 64 COLUMN 1/0 Aadg pAil AZ 0+ DECODER CIRCULT 43q7 DOE A304 & A4 acd PAr0 meq e | I 1 poe aco MEMORY CELL Ao po roe] 2 LSy Row je ARRAY 90 NO A904 & DECODER 16384x8 bite 01 DOs A100 a Allo4 02 DO4 Al2o GND pos Also MODE SELECTION PIN IPGMI CE | O | Vee | Vcc Oo~0O7 POWER MODE (27)|(20)1(22)] (1) 1(28)| 41~13, 15~19) PIN NAMES Read HJ} LIL Data Out Ao~A Address inputs Output Actwe ~ ss Inpu owes p * | * | H | 5V | 5V}) High Impedance Oo~O7 Outputs (Inputs) Deselect CE Chip Enable Input Standby * | H| * High Impedance | Standby OE Output Enable Input Program L [tt Data In PGM Program Control input Program * H * High Impedance 9 ol inpu 9 126v| ey HP Active Vep Program Supply Voltage Inhibit H L | H High Impedance Vv Vee S' ly Volt +5V Program cc cc Supply Voltage {+ 8V) 9 H}ult Data Out GND Ground Verify Note * : Horl TT G27 TMM27128AD-15, TMM27126AD-150 TMM27128AD-20, TMM27128AD-200 MAXIMUM RATINGS ; SYMBOL ITEM RATING UNIT | Vcc Vec Power Supply Voltage -0.6~7.0 V Cc Vep | Program Supply Voltage 0.6~14.0 Vv LO Vin | Input Voltage 0.6~7.0 Vv | Vout Output Voltage 0.6~7.0 V [ Po ' Power Dissipation 1.5 W | TsoiDer Soldering Temperature Time 260-10 "Cesec EF Tstac Storage Temperature 65~125 C \ Torr Operating Temperature O~70 C READ OPERATION D. C. RECOMMENDED OPERATING CONDITIONS [ SYMBOL ! PARAMETER TTMM27128AD-15/20 TMM27128AD-1 60/200 | Ta Operating Temperature 0~70C 0~70C Vee Vcc Power Supply Voltage 5V+5% 5V+10% [ Vep Ver Power Supply Voltage 2.0~Vcc+t0.6V 2.0~Vec+0.6V D. C. AND OPERATING CHARACTERISTICS SYMBOL | PARAMETER CONDITION MIN. | TYP. | MAX. | UNIT fu Input Current Vin=O~Vec _ _ +10 uA tLo Output Leakage Current Vout=0.4~Vcc _ _ +10 BA lect Supply Current (Standby) CE=Vin 718/20 30 mA 150/200 | _ 35 15/20 - _- 100 Icc2 Supply. Current (Active) CE=Via 7150/2001 = 120 mA Vin Input High Voltage _ 2.0}; JVcct+1.0; V ViL Input Low Voltage -_ -0.3] 0.8 Vv Vou Output High Voltage loH= ~400pnA 2.4) v Vor Output Low Voltage lo.=2.1mMA _ _ 0.4 Vv. lp Vee Current Vee=O~Vect+ 0.6 > - +10 uATMM27128AD-15, TMM27128AD-150 TMM27128AD-20, TMM27128AD-200 A. C. CHARACTERISTICS SYMBOL PARAMETER Tonerraeho 8 189 | NTT UNIT | ee _ a fax. | MIN, | MAA __tace Address Access Time : = 150 ot 200 , ons 3 ict CE to Output Valid : 150 ! 200 | ons pe ee - ah oe + tor ; O to Output Valid i - / 70 : | 70 Ions | poo a pe {.___- + 4 tPGM PGM to | to Output Valid / - 70 | _ 70 ns a VAN ne ee Ht tor. CE te to 5 Output in High-Z , Oo | 60 | 0 ! 60 i ons - OE to Output in High-2 rn a 60.0 60.) ons | tor2 { j 1 t I __toxa OE to Output wn Might = toe3 | PGM to Output in High-Z ! Oo : 60 : O | 60 / ons | 8 Sa es i tou | Output Data Hold Time : 0 ' = 0 | - 2 ons! A. C. TEST CONDITIONS @ Output Load - 1 TTL Gate and C= 100pF @ Input Pulse Rise and Fall Times - 10ns Max. @ Input Pulse Levels - 0.45V to 2.4V @ Timing Measurement Reference Level - Inputs O.8V and 2.OV, Outputs O.8V and 2 OV CAPACITANCE * (Ta=25C. f= 1MHz) Cin PARAMETER Input Capacitance CONDITION Vout=OV * This paramater is periodically sampled is not 100% tested. Output Capacitance TIMING WAVEFORMS (READ) Ag~ Als PGM 09 ~ Ov DATA OUTPUTS oT G29 Tr _-TMM27128AD-15, TMM27128AD-150 TMM27128AD-20, TMM27128AD-200 HIGH SPEED PROGRAM OPERATION D. C. RECOMMENDED OPERATING CONDITIONS _ SYMBOL PARAMETER MIN. TYP MAX. =, UNIT Vin Input High Voltage 2.0 - Vec+ 1.0 | V Vi Input Low Voltage -0.3 | 08 | V Vee - Vic Power Supply Voltage 5.75 6.0 6.25 Vv Vee |.-s Veep Power Supply Voltage 12.0 12. 13.0 Vv D. C. and OPERATING CHARACTERISTICS (Ta=25+5C, Vec=6V+40.25V, Vep=12.5V+0 5V) SYMBOL PARAMETER TEST CONDITION MIN. | TYP. [MAX.] UNIT : tu Input Current Vin =O~Vec | = j;+10] yA | Vou Output High Voltage lon= -400nA 24, ~ Vo: Vo. | Qutpu Low Voltage fo. =2.1mA }/04 vo lec, Vec Supply Current oo = | [120]; ma | Ippo Vep Supply Current Vep=13.0V _ _ 50 mA Vio__|_ AQ Auto Select Voltage i 11.5/12.0]12.5; V A. C. PROGRAMMING CHARACTERISTICS = (1a=25+45C, Vec=6V+0.25V, Vep=12.5V+0.5V) SYMBOL PARAMETER TEST CONDITION MIN. | TYP. [MAX.] UNIT | tas Address Setup Time 2 ~ Ss taH Address Hold Time 2 _ _ HS tces CE Setup Time _ 2 _ _ us tceH CE Hold Time _ 2 _ - us | tos Data Setup Time _ 2 _ _ BS i; tox Data Hold Time _ 2 _ = us tvs Vee Setup Time _ 2 - us tew Program Pulse Width _ 0.95/ 1.0 11.05 ms topw Additional Program Pulse Width Note 1 2.85 3 178.75 ms teat Program pulse Rise Time _ 5 _ _ ns {PFT Program Pulse Fall Time _ 5 _ _ ns toe OE to Output Valid Valid | 100 ns tor2 OE to Output is High-Z CE=Vir _ _ 90 ns A. C. TEST CONDITIONS... @ Output Load @ Input Pulse Rise and Fall Times @ Input Pulse Levels @ Timing Measurement Reference Level : 1 TTL Gate and C. (1O0pF} : 7Ons Max. : 0.45V to 2.4V : Input 0O.8V and 2.0V, Output 0.8V and 2.0V G30 TMM27128AD-15, TMM27128AD-150 TMM27128AD-20, TMM27128AD-200 TIMING WAVEFORMS (PROGRAM) ADDRESSES Og~ Oy UNKNOWN DIN STABLE tvs fi GRAM VERIFY PROGRAM INITIAL PROCRAM ADDITIONAL PROGRAM Note: 1. Vcc must be applied simultaneously or before Ver and cut off simultaneously or after Ver. 2. Removing the device from socket and setting the device in socket with Vep=12.5V may cause permanent damage to the device. 3. The Ver supply voltage is permitted up to 14V for program operation, so the voltage over 14V should not be applied to the Ver terminal. When the switching pulse voltage is applied to the Ver terminal, the overshoot voitage of its pulse should not be exceeded 14V. G31 1 - SEETMM27128AD-15, TMM27128AD-150 TMM27128AD-20, TMM27128AD-200 ERASURE CHARACTERISTICS The TMM27128ADs erasure is achieved by apply- ing shortwave ultraviolet light which has a wave- length of 2537A (Angstroms) through the chips trans- parent window. The integrated dose (ultraviolet light intensity [W/cm?] X exposure time [sec.]) for erasure should be a minimum of 15 [W.sec/cm?] When the Toshiba sterilizing lamp GL-15 is used and the device is exposed at a distance of 1cm from the lamp surface, the erasure will be achieved within 60 minutes. OPERATION INFORMATION The TMM27128ADs six operation modes are listed in the following table. Mode selection can be achieved by applying TTL level signal to all inputs. And using commercial lamps whose ultraviolet light intensity is 12000 [uw/cm?] will reduce the exposure time to about 20 minutes. (In this case, the integrated dose is 12000 [uw/cm?] xX (20X60) [sec] 15 {w-sec/cm?] ) The TMM27128ADs erasure begins to occur when exposed to light with wavelength shorter than 4000A. Sunlight and flourescent lamps include 3000~4000A wavelength components. Therefore when used under such lighting for extended periods of time, opaque seals-Toshiba EPROM Protect Seal AC901-are avail- able In the read operation mode, a single 5V power suDply 1s required and the levels require! for al! inputs are TTL. q 1 Note H : Vin, L: Viiv : Vin or Vin READ MODE The TMM27128AD has three control functions. The chip enable (CE) controls the operation power and should be used for device selection. The output enable (OF) and the program control (PGM) control the output buffers, independent of device selection. _ Assuming that CE=OE=Vit and PGM=Vin, the output data is valid at the output after address access time from stabilizing of all addresses. OUTPUT DESELECT MODE Assuming that CE=V|y or OE=Vix, the outputs will be in high impedance state. Thus, two or more TMM27128AD's can be connected The CE to output valid (tce) is equal to the address access time (tacc). __ Assuming that CE=Vit, PGM=Vin and all ad- dresses are valid, the output is valid at the outputs. after toe from the falling edge of OE. And assuming that CE=OE=Vit and all addresses are valid, the output data ts valid at the outputs after tpcm from the rising edge of PGM. together on a common bus line. When GE is decoded for device selection, all deselected devices are in low power standby mode. G32 TT 07 PIN NAMES (NUMBER) | PGM) CE | OF Vp Vec Oo~O7 POWER | MODE (27) | (20) | (22) (1) (28) (11~13, 15~19) i READ Read H L L Data Out Active OPERATION Output Deselect * * H 5V 5V High Impedance Active (Ta=O~ 70C) Standby * H * High Impedance Standby PROGRAM Program L L * Data In Active OPERATION Program Inhibit : - : 12.5V 6V = eens a (Ta=25+5C) Program Verify H L L Data Out ActiveSTANDBY MODE The TMM27128AD has a low power standby mode conntrolled by the CE signal. By applying a TTL high level to the CE input, the TMM27128AD is placed in the standby mode which PROGRAM MODE Initially, when received by customers, all bits of the TMM27128AD are in the 1 state which is the erased state. The programming operation introduces Cs data into the desired bit locations by electrical programming. PROGRAM VERIFY MODE The verify mode is to check that the desired data 1s correctly programmed on the programmed bits. PROGRAM INHIBIT MODE Under the condition that the program voltage (+ 12.5V) is applied to Ver terminal, a high jevel CE or PGM input inhibits the TMM27128AD from being erogrammed. Programming of two or more TMM27128ADs in perallel with different data 1s easily accomplished. HIGH SPEED PROGRAMMING MODE Tae program time can be greatly decreased by using this high speed programming mode. The device is set up in the high speed programming mode when the programming voltage (+12.5V) is applied to the Vpp terminal with Vcc=6V and PGM= VIH. The programming |s achieved by applying a single TTL iow level 1ms pulse the PGM input after addres- ses and data are stable. Then the programmed data is verified by using Program Verify Mode. If the progra:nmed data is not correct, another TT TMM27128AD-15, TMM27126AD-150 TMM27126AD-20, TMM27128AD-200 reduces 70% of operating current. The outputs are in a high impedence state, independent of the OE and the PGM inputs. The levels required for all inputs are TTL. The TMM27128AD can be programmed at any location, anytime either individually, sequentially or at random. The verify is accomplished with OE and CE at Vit and PGM at Vin. That is, all inputs except for CE or PGM may be commonly connected, and a TTL low level program pulse is applied to the CE and PGM of the desired device only and TTL high level signal is applied to the other devices. program pulse of 1ms is applied and then pro- grammed data is verified. This should be repeated until the program operates correctly (max. 25 times) After correctly programming the selected address, one additional program pulse with pulse width 3 times that needed for programming iS applied. When programming has been completed, the data in all addresses should be verified with Vcc= Vee =5V,. The High Speed Program II Algorithm (shown in figure 2, page G-5) may also be used to reduce the programming time further.TMM27128AD-15, TMM27126AD-150 TMM27128AD-20, TMM27128AD-200 HIGH SPEED PROGRAM MODE FLOW CHART ADDRESS = START ADDRESS Vpp=125V DATA=FF? NO ADDRESS = OVERFROGRAM 3X PULSES OF imsec NEXT ADDRESS OR ONE PULSE OF 3X msec DURATION OK Voc=S0V Vpp=50V READ ALL BYTE NG G34 ELECTRIC SIGNATURE MODE Electric signature mode allows a code to be read from the TMM27128AD which identifies its manufac- ture and device type. The programming equipment may read out manu- facturer code and device code from the TMM2764AD by using this mode before program operation and automatically set program voltage (Vpp) and algorithm. TMM27128AD-15, TMM27128AD-150 TMM27128AD-20, TMM27128AD-200 Electric signature mode is set up when 12V is applied to address line AQ and the rest of address lines are set to Vi; in read operation. Data output is this conditions is manufacturer code. Device code is identified when address AO is set to Viy. These two code possess an odd parity with the parity bit of MSB (07). The foliowing tabie shows electric signature of the TMM27128AD. ee PINS; A, O; Oo | O | O Os QO, O; Oo | HEX. | ' SIGNATURE | (10) (19) (18) (17) (16) (15) (13) (12) (11) | DATA Manufacture Code Vit 1 0 0 1 1 0 0 0 98 Device Code Vi 1 i 1 0 1 0 0 1 | 1 53 Notes: AQ9=12V+0.5V Al~A8, A1O~A13,CE, OF=Vit PGM=Vin G35 tyTMM27128AD-15, TMM27128AD-150 TMM27128AD-20, TMM27126AD-200 OUTLINE DRAWINGS Unit in mm 377MAX. 71:02 be Ny Ds Nee D8 as 22 1 2/19 18 17 16 15 mir Mmm rs & - + ~ ) RaA64 x 12345 67 8 9 10 111213 14 > = o 1524+03 fs] je { ; ] | +Q15 a25-010 3 2.544025 1.34025 9 t mt Re 3 +015 046-010 1%4MAX Note 1 Note 2 Note: 1. Each tead pitch is 2.54mm. All leads are located within 0.25mm of their true longitudinal position with respect No.1 and No.28 leads. 2. This value is measured at the end of leads. 3. All dimensions are in milimeters. G36