TIP31 ... TIP31C
TIP31 ... TIP31C
NPN General Purpose Silicon Power Transistors
Silizium Leistungs-Transistoren für universellen Einsatz NPN
Version 2006-07-12
Dimensions - Maße [mm]
1 = B 2/4 = C 3 = E
Max. power dissipation with cooling
Max. Verlustleistung mit Kühlung
40 W
Collector current
Kollektorstrom
3 A
Plastic case
Kunststoffgehäuse
TO-220AB
Weight approx.
Gewicht ca.
2.2 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
TIP31 TIP31A TIP31B TIP31C
Collector-Emitter-voltage B open VCEO 40 V 60 V 80 V 100 V
Collector-Emitter-voltage E open VCES 40 V 60 V 80 V 100 V
Emitter-Base-voltage C open VEBO 5 V
Power dissipation – Verlustleistung
without cooling – ohne Kühlung
with cooling – mit Kühlung
TA = 25°C
TC = 25°C
Ptot
Ptot
2 W 1)
40 W
Collector current – Kollektorstrom (dc) IC3 A
Peak Collector current – Kollektor-Spitzenstrom ICM 5 A
Base current – Basisstrom (dc) IB1 A
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Charact eris tics (T j = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 4 V, IC = 1 A
VCE = 4 V, IC = 3 A
hFE
hFE
25
10
–
–
–
50
Collector-Emitter saturation volt. – Kollektor-Emitter-Sättigungsspg. 2)
IC = 3 A, IB = 375 mA VCEsat – – 1.2 V
Base-Emitter voltage – Basis-Emitter-Spannung 2)
VCE = 4 V, IC = 3 A VBE – – 1.8 V
1 Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG http://www.diotec.com/ 1
3.8
2.54
0.9
1.5
10
±0.2
3.4 3
13.2 1
5
.
7
4
321
Typ e
Typ
TIP31 ... TIP31C
Charact eris tics (T j = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
VCE = 30 V (B open) TIP31
TIP31A
ICE0
ICE0
–
–
–
–
300 nA
300 nA
VCE = 60 V (B open) TIP31B
TIP31C
ICE0
ICE0
–
–
–
–
300 nA
300 nA
VCE = 40 V (B-E short)
VCE = 60 V (B-E short)
TIP31
TIP31A
ICES
ICES
–
–
–
–
200 nA
200 nA
VCE = 80 V (B-E short)
VCE = 100 V (B-E short)
TIP31B
TIP31C
ICES
ICES
–
–
–
–
200 nA
200 nA
Emitter-Base cutoff current
VEB = 5 V, (C open) IEB0 ––1 mA
Gain-Bandwidth Product – Transitfrequenz
VCE = 10 V, IC = 0.5 A, f = 1 MHz fT3 MHz – –
Small signal current gain – Kleinsignal-Stromverstärkung
VCE = 10 V, IC = 0.5 A, f = 1 kHz
VCE = 10 V, IC = 0.5 A, f = 1 MHz
hfe
hfe
20
3
–
–
–
–
Switching times – Schaltzeiten (between 10% and 90% levels)
turn-on time
turn-off time
ICon = 1 A
IBon = - IBoff = 100 mA
ton – 300 ns –
toff –1 µs–
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA < 63 K/W 1)
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse RthC < 3 K/W
Admissible torque for mounting
Zulässiges Anzugsdrehmoment M4 9 ± 10% lb.in.
1 ± 10% Nm
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren TIP32 ... TIP32C
1 Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2http://www.diotec.com/ © Diotec Semiconductor AG