IXGT20N140C3H1 - Zilog

VCES = 1400V

IC100 = 20A

VCE(sat) ≤≤

≤≤

≤ 5.0V

tfi(typ) = 32ns

GenX3TM 1400V IGBTs

w/ Diode

High-Speed PT IGBTs

for 20 - 50 kHz Switching

Symbol Test Conditions Maximum Ratings

VCES TJ= 25°C to 150°C 1400 V

VCGR TJ= 25°C to 150°C, RGE = 1MΩ1400 V

VGES Continuous ±20 V

VGEM Transient ±30 V

IC25 TC= 25°C 42 A

IC100 TC= 100°C 20 A

ICM TC= 25°C, 1ms 108 A

IATC= 25°C 20 A

EAS TC= 25°C 400 mJ

SSOA VGE = 15V, TJ = 125°C, RG = 5Ω ICM = 40 A

(RBSOA) Clamped Inductive Load VCE ≤≤

≤≤

≤ VCES

PCTC= 25°C 250 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6mm (0.062 in.) from Case for 10s 300 °C

TSOLD Plastic Body for 10 seconds 260 °C

MdMounting Torque (TO-247) 1.13/10 Nm/lb.in.

Weight TO-247 6 g

TO-268 4 g

Advance Technical Information

Features

zOptimized for Low Switching Losses

zSquare RBSOA

zHigh Avalanche Capability

zAnti-Parallel Ultra Fast Diode

zInternational Standard Packages

Advantages

zHigh Power Density

zLow Gate Drive Requirement

Applications

zHigh Frequency Power Inverters

zUPS

zMotor Drives

zSMPS

zPFC Circuits

zBattery Chargers

zWelding Machines

zLamp Ballasts

IXGH20N140C3H1

IXGT20N140C3H1

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

VGE(th) IC= 250μA, VCE = VGE 3.0 5.0 V

ICES VCE = VCES, VGE= 0V 100 μA

TJ = 125°C, Note 1 2.0 mA

IGES VCE = 0V, VGE = ±20V ±100 nA

VCE(sat) IC = IC100, VGE = 15V, Note 1 4.0 5.0 V

TJ = 125°C 3.5 V

G = Gate C = Collector

E = Emitter Tab = Collector

TO-247 (IXGH)

TO-268 (IXGT)

GCEC (Tab)

C (Tab)

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGH20N140C3H1

IXGT20N140C3H1

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs IC = IC100, VCE = 10V, Note 1 10 17 S

Cies 1790 pF

Coes VCE = 25V, VGE = 0V, f = 1MHz 145 pF

Cres 50 pF

Qg 88 nC

Qge IC = IC100, VGE = 15V, VCE = 0.5 • VCES 18 nC

Qgc 30 nC

td(on) 19 ns

tri 12 ns

Eon 1.35 mJ

td(off) 110 ns

tfi 32 ns

Eoff 0.44 0.80 mJ

td(on) 22 ns

tri 13 ns

Eon 2.33 mJ

td(off) 144 ns

tfi 380 ns

Eoff 1.64 mJ

RthJC 0.50 °C/W

RthCK TO-247 0.21 °C/W

Inductive load, TJ = 25°C

IC = IC100, VGE = 15V

VCE = 0.5 • VCES, RG = 5Ω

Note 2

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

Reverse Diode (FRED)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

VF IF = 20A, VGE = 0V, Note 1 3.0 V

TJ = 125°C 2.8 V

IRM 19 A

trr 70 ns

RthJC 0.9 °C/W

IF = 20A, VGE = 0V,

-diF/dt = 750A/μs, VR = 800V

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.

TO-247 Outline

TO-268 Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

Terminals: 1 - Gate 2 - Collector

3 - Emitter

Terminals: 1 - Gate 2 & 4 - Collector

3 - Emitter

Inductive load, TJ = 125°C

IC = IC100, VGE = 15V

VCE = 0.5 • VCES, RG = 5Ω

Note 2

∅ P

1 2 3