ON Semiconductor NPN MJ11028 High-Current Complementary Silicon Transistors MJ11032* PNP . . . for use as output devices in complementary general purpose amplifier applications. MJ11029 * High DC Current Gain -- MJ11033 * * * * hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc Curves to 100 A (Pulsed) Diode Protection to Rated IC Monolithic Construction with Built-In Base-Emitter Shunt Resistor Junction Temperature to +200C *ON Semiconductor Preferred Device 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60-120 VOLTS 300 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIIIIII III IIII IIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III * MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol MJ11028 MJ11029 MJ11032 MJ11033 Unit VCEO 60 120 Vdc Collector-Base Voltage VCB 60 120 Vdc Emitter-Base Voltage VEB 5 Vdc Collector Current -- Continuous Peak IC ICM 50 100 Adc Base Current -- Continuous IB 2 Adc Total Power Dissipation @ TC = 25C Derate above 25C @ TC = 100C PD 300 1.71 Watts W/C TJ, Tstg -55 to +200 C Operating and Storage Junction Temperature Range CASE 197A-05 TO-204AE (TO-3) THERMAL CHARACTERISTICS Characteristic Maximum Lead Temperature for Soldering Purposes for 10 seconds Thermal Resistance Junction to Case Symbol Max Unit TL 275 C RJC 0.584 C COLLECTOR PNP MJ11029 MJ11033 COLLECTOR NPN MJ11028 MJ11032 BASE BASE 3.0 k 25 3.0 k EMITTER 25 EMITTER Figure 1. Darlington Circuit Schematic Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 3 1 Publication Order Number: MJ11028/D MJ11028 MJ11032 MJ11029 MJ11033 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CEO 60 120 -- -- Vdc -- -- -- -- 2 2 10 10 OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1) (IC = 1 00 mAdc, IB = 0) MJ11028, MJ11029 MJ11032, MJ11033 Collector-Emitter Leakage Current (VCE = 60 Vdc, RBE = 1 k ohm) (VCE = 120 Vdc, RBE = 1 k ohm) (VCE = 60 Vdc, RBE = 1 k ohm, TC = 150C) (VCE = 120 Vdc, RBE = 1 k ohm, TC = 150C) MJ11028, MJ11029 MJ11032, MJ11033 MJ11028, MJ11029 MJ11032, MJ11033 ICER mAdc Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO -- 5 mAdc Collector-Emitter Leakage Current (VCE = 50 Vdc, IB = 0) ICEO -- 2 mAdc 1k 400 18 k -- -- -- 2.5 3.5 -- -- 3.0 4.5 ON CHARACTERISTICS (1) DC Current Gain (IC = 25 Adc, VCE = 5 Vdc) (IC = 50 Adc, VCE = 5 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 25 Adc, IB = 250 mAdc) (IC = 50 Adc, IB = 500 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 25 Adc, IB = 200 mAdc) (IC = 50 Adc, IB = 300 mAdc) VBE(sat) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 2 -- Vdc Vdc MJ11028 MJ11032 MJ11029 MJ11033 IC, COLLECTOR CURRENT (AMP) 100 There are two limitations on the power-handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 200C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 50 20 10 5 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C SECOND BREAKDOWN LIMITED 2 1 MJ11028, 29 MJ11032, 33 0.5 0.2 0.1 0.2 0.5 1 2 5 10 20 50 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 100 k VCE = 5 V TJ = 25C hFE, DC CURRENT GAIN 50 k 20 k 10 k 5k 2k MJ11029, MJ11033 PNP MJ11028, MJ11032 NPN 1k 500 80 s (PULSED) 200 100 1 2 5 10 20 50 100 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. DC Safe Operating Area 5 MJ11029, MJ11033 PNP MJ11028, MJ11032 NPN 4 3 TJ = 25C IC/IB = 100 VBE(sat) 2 1 0 80 s (PULSED) VCE(sat) 1 2 3 5 10 20 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 3. DC Current Gain Figure 4. "On" Voltage http://onsemi.com 3 50 100 MJ11028 MJ11032 MJ11029 MJ11033 PACKAGE DIMENSIONS CASE 197A-05 TO-204AE (TO-3) ISSUE J A N C -T- E D K 2 PL 0.30 (0.012) U V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE T Q M M Y M DIM A B C D E G H K L N Q U V -Y- L 2 H G B M T Y 1 -Q- 0.25 (0.010) M INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. 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