High-Current Complementary
Silicon Transistors
. . . for use as output devices in complementary general purpose
amplifier applications.
•High DC Current Gain —
hFE = 1000 (Min) @ IC = 25 Adc
hFE = 400 (Min) @ IC = 50 Adc
•Curves to 100 A (Pulsed)
•Diode Protection to Rated IC
•Monolithic Construction with Built–In Base–Emitter Shunt
Resistor
•Junction Temperature to +200C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Symbol
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
MJ11028
MJ11029
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
MJ11032
MJ11033
ÎÎÎ
Î
Î
Î
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎ
ÎÎÎÎ
VCEO
ÎÎÎÎ
ÎÎÎÎ
60
ÎÎÎÎ
ÎÎÎÎ
120
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VCB
ÎÎÎÎ
ÎÎÎÎ
60
ÎÎÎÎ
ÎÎÎÎ
120
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VEB
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
5
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
Peak
ÎÎÎÎ
ÎÎÎÎ
IC
ICM
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
50
100
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current — Continuous
ÎÎÎÎ
ÎÎÎÎ
IB
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
2
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25C
Derate above 25C @ TC = 100C
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
PD
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
300
1.71
ÎÎÎ
Î
Î
Î
ÎÎÎ
Watts
W/C
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
–55 to +200
ÎÎÎ
Î
Î
Î
ÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum Lead Temperature for
Soldering Purposes for 10 seconds
ÎÎ
TL
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
275
ÎÎÎ
Î
Î
Î
ÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance Junction to Case
RθJC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
0.584
ÎÎÎ
ÎÎÎ
C
Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
≈3.0 k ≈25
PNP
MJ11029
MJ11033
BASE
EMITTER
COLLECTOR
≈3.0 k ≈25
NPN
MJ11028
MJ11032
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 3 1Publication Order Number:
MJ11028/D
MJ11028
MJ11032
MJ11029
MJ11033
50 AMPERE
COMPLEMENTARY
SILICON
DARLINGTON
POWER TRANSISTORS
60–120 VOLTS
300 WATTS
*ON Semiconductor Preferred Device
NPN
PNP
*
*
CASE 197A–05
TO–204AE (TO–3)
MJ11028 MJ11032 MJ11029 MJ11033
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Breakdown Voltage (1) MJ11028, MJ11029
(IC = 1 00 mAdc, IB = 0) MJ11032, MJ11033
ÎÎÎÎÎ
ÎÎÎÎÎ
V(BR)CEO
ÎÎÎ
ÎÎÎ
60
120
ÎÎÎÎ
ÎÎÎÎ
—
—
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Leakage Current
(VCE = 60 Vdc, RBE = 1 k ohm) MJ11028, MJ11029
(VCE = 120 Vdc, RBE = 1 k ohm) MJ11032, MJ11033
(VCE = 60 Vdc, RBE = 1 k ohm, TC = 150C) MJ11028, MJ11029
(VCE = 120 Vdc, RBE = 1 k ohm, TC = 150C) MJ11032, MJ11033
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICER
ÎÎÎ
Î
Î
Î
Î
Î
Î
Î
Î
Î
ÎÎÎ
—
—
—
—
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
2
2
10
10
ÎÎÎ
Î
Î
Î
Î
Î
Î
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎÎ
ÎÎÎ
—
ÎÎÎÎ
ÎÎÎÎ
5
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Leakage Current (VCE = 50 Vdc, IB = 0)
ÎÎÎÎÎ
ICEO
ÎÎÎ
—
ÎÎÎÎ
2
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 25 Adc, VCE = 5 Vdc)
(IC = 50 Adc, VCE = 5 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
ÎÎÎ
Î
Î
Î
ÎÎÎ
1 k
400
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
18 k
—
ÎÎÎ
Î
Î
Î
ÎÎÎ
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage
(IC = 25 Adc, IB = 250 mAdc)
(IC = 50 Adc, IB = 500 mAdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCE(sat)
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
—
—
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
2.5
3.5
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter Saturation Voltage
(IC = 25 Adc, IB = 200 mAdc)
(IC = 50 Adc, IB = 300 mAdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(sat)
ÎÎÎ
Î
Î
Î
ÎÎÎ
—
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
3.0
4.5
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
MJ11028 MJ11032 MJ11029 MJ11033
http://onsemi.com
3
IC, COLLECTOR CURRENT (AMP)
100
0.2
Figure 2. DC Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
0.5 1 2 5 10 20 50 200
20
10
5
50
2
1
0.5
0.2
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
SECOND BREAKDOWN LIMITED
MJ11028, 29
MJ11032, 33
100
There are two limitations on the power–handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 200C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
100 k
IC, COLLECTOR CURRENT (AMP)
50 k
20 k
10 k
5 k
2 k
500
Figure 3. DC Current Gain
1 2 5 10 10020 50
Figure 4. “On” Voltage
100
VCE = 5 V
TJ = 25°C
1 k
200
MJ11029, MJ11033 PNP
MJ11028, MJ11032 NPN
5
4
3
2
1
1 2 5 10 10020 50
03
TJ = 25°C
IC/IB = 100 VBE(sat)
80 µs
(PULSED)
MJ11029, MJ11033 PNP
MJ11028, MJ11032 NPN
80 µs
(PULSED)
VCE(sat)
MJ11028 MJ11032 MJ11029 MJ11033
http://onsemi.com
4
PACKAGE DIMENSIONS
CASE 197A–05
TO–204AE (TO–3)
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.530 REF 38.86 REF
B0.990 1.050 25.15 26.67
C0.250 0.335 6.35 8.51
D0.057 0.063 1.45 1.60
E0.060 0.070 1.53 1.77
G0.430 BSC 10.92 BSC
H0.215 BSC 5.46 BSC
K0.440 0.480 11.18 12.19
L0.665 BSC 16.89 BSC
N0.760 0.830 19.31 21.08
Q0.151 0.165 3.84 4.19
U1.187 BSC 30.15 BSC
V0.131 0.188 3.33 4.77
A
N
E
C
K
–T– SEATING
PLANE
2 PL
D
M
Q
M
0.30 (0.012) Y M
T
M
Y
M
0.25 (0.010) T
–Q–
–Y–
2
1
L
GB
V
H
U
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