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FCH070N60E — N-Channel SuperFET® II Easy-Drive MOSFET
©2015 Fairchild Semiconductor Corporation
FCH070N60E Rev. 1.0
www.fairchildsemi.com
1
April 2015
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Thermal Characteristics
Symbol Parameter FCH070N60E Unit
VDSS Drain to Source Voltage 600 V
VGSS Gate to Source Voltage - DC ±20 V
- AC (f > 1 Hz) ±30
IDDrain Current - Continuous (TC = 25oC) 52 A
- Continuous (TC = 100oC) 33
IDM Drain Current - Pulsed (Note 1) 156 A
EAS Single Pulsed Avalanche Energy (Note 2) 1128 mJ
IAR Avalanche Current (Note 1) 9.5 A
EAR Repetitive Avalanche Energy (Note 1) 4.8 mJ
dv/dt MOSFET dv/dt 100 V/ns
Peak Diode Recovery dv/dt (Note 3) 20
PDPower Dissipation (TC = 25oC) 481 W
- Derate Above 25oC3.85W/
oC
TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC
TLMaximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC
Symbol Parameter FCH070N60E Unit
RθJC Thermal Resistance, Junction to Case, Max. 0.26 oC/W
RθJA Thermal Resistance, Junction to Ambient, Max. 40
FCH070N60E
N-Channel SuperFET® II Easy-Drive MOSFET
600 V, 52 A, 70 mΩ
Features
• 650 V @ TJ = 150°C
•Typ. R
DS(on) = 58 mΩ
• Ultra Low Gate Charge (Typ. Qg = 128 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 457 pF)
• 100% Avalanche Tested
•RoHS Compliant
Applications
• Telecom / Sever Power Supplies
• Industrial Power Supplies
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET easy-drive series offers slightly slower
rise and fall times compared to the SuperFET II MOSFET
series. Noted by the "E" part number suffix, this family helps
manage EMI issues and allows for easier design implementa-
tion. For faster switching in applications where switching losses
must be at an absolute minimum, please consider the Super-
FET II MOSFET series.
GDSTO-247
G
S
D
www.fairchildsemi.com
2
©2015 Fairchild Semiconductor Corporation
FCH070N60E Rev. 1.0
FCH070N60E — N-Channel SuperFET® II Easy-Drive MOSFET
Package Marking and Ordering Information
Electrical Characteristics TC = 25oC unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FCH070N60E FCH070N60E TO-247 Tube N/A N/A 30 units
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 10 mA, TJ = 25°C 600 - - V
VGS = 0 V, ID = 10 mA, TJ = 150°C 650 - - V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 10 mA, Referenced to 25oC-0.7-V/
oC
IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V - - 1 μA
VDS = 480 V, VGS = 0 V,TC = 125oC- 3.4 -
IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±100 nA
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA2.5-3.5V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 26 A - 58 70 mΩ
gFS Forward Transconductance VDS = 20 V, ID = 26 A -44-S
Ciss Input Capacitance VDS = 380 V, VGS = 0 V,
f = 1 MHz
- 3705 4925 pF
Coss Output Capacitance - 116 155 pF
Crss Reverse Transfer Capacitance - 12.3 20 pF
Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 457 - pF
Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 26 A,
VGS = 10 V
(Note 4)
- 128 166 nC
Qgs Gate to Source Gate Charge - 18 - nC
Qgd Gate to Drain “Miller” Charge - 54 - nC
ESR Equivalent Series Resistance f = 1 MHz - 0.6 - Ω
td(on) Turn-On Delay Time
VDD = 380 V, ID = 26 A,
VGS = 10 V, Rg = 4.7 Ω
(Note 4)
-2968ns
trTurn-On Rise Time - 28 66 ns
td(off) Turn-Off Delay Time - 122 254 ns
tfTurn-Off Fall Time - 28 66 ns
ISMaximum Continuous Drain to Source Diode Forward Current - - 52 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 156 A
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 26 A - - 1.2 V
trr Reverse Recovery Time VGS = 0 V, ISD = 26 A,
dIF/dt = 100 A/μs
- 463 - ns
Qrr Reverse Recovery Charge - 10.4 - μC
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 9.5 A, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 26 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, Starting TJ = 25°C
4. Essentially independent of operating temperature.
www.fairchildsemi.com
3
©2015 Fairchild Semiconductor Corporation
FCH070N60E Rev. 1.0
FCH070N60E — N-Channel SuperFET® II Easy-Drive MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
0.1 1 10 20
1
10
100
200
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
ID, Drain Current[A]
VDS, Drain-Source Voltage[V]
VGS = 10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
234567
1
10
100
200
-55oC
150oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
25oC
ID, Drain Current[A]
VGS, Gate-Source Voltage[V]
0 25 50 75 100 125 150 175 200
0.04
0.06
0.08
0.10
0.12
0.14
*Note: TC = 25oC
VGS = 20V
VGS = 10V
RDS(ON) [Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.00.30.60.91.21.5
0.001
0.01
0.1
1
10
100
200
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
150oC
IS, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0.1 1 10 100 600
0.3
1
10
100
1000
10000
100000
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz Crss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
0 35 70 105 140
0
2
4
6
8
10
VDS = 480V
VDS = 300V
VDS = 120V
*Note: ID = 26A
VGS, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
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4
©2015 Fairchild Semiconductor Corporation
FCH070N60E Rev. 1.0
FCH070N60E — N-Channel SuperFET® II Easy-Drive MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Eoss vs. Drain to Source Voltage
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
*Notes:
1. VGS = 0V
2. ID = 10mA
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.5
1.0
1.5
2.0
2.5
*Notes:
1. VGS = 10V
2. ID = 26A
RDS(on), [Normalized]
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
0.1 1 10 100 1000
0.1
1
10
100
1000
10μs
100μs
1ms
10ms
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R DS(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
DC
25 50 75 100 125 150
0
12
24
36
48
60
ID, Drain Current [A]
TC, Case Temperature [oC]
0 120 240 360 480 600
0
6
12
18
24
30
EOSS, [μJ]
VDS, Drain to Source Voltage [V]
www.fairchildsemi.com5
©2015 Fairchild Semiconductor Corporation
FCH070N60E Rev. 1.0
FCH070N60E — N-Channel SuperFET® II Easy-Drive MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
10-5 10-4 10-3 10-2 10-1 1
0.001
0.01
0.1
0.5
ZθJC(t), Thermal Response [oC/W]
0.01
0.1
0.2
0.05
0.02
*Notes:
1. ZθJC(t) = 0.26oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.5
Single pulse
t1, Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
www.fairchildsemi.com
6
©2015 Fairchild Semiconductor Corporation
FCH070N60E Rev. 1.0
FCH070N60E — N-Channel SuperFET® II Easy-Drive MOSFET
Figure 13. Gate Charge Test Circuit & Waveform
Figure 14. Resistive Switching Test Circuit & Waveforms
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VGS
IG = const.
www.fairchildsemi.com
7
©2015 Fairchild Semiconductor Corporation
FCH070N60E Rev. 1.0
FCH070N60E — N-Channel SuperFET® II Easy-Drive MOSFET
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
www.fairchildsemi.com8
©2015 Fairchild Semiconductor Corporation
FCH070N60E Rev. 1.0
FCH070N60E — N-Channel SuperFET® II Easy-Drive MOSFET
Mechanical Dimensions
Figure 16. TO-247, Molded, 3-Lead, Jedec AB Long Leads
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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9
©2015 Fairchild Semiconductor Corporation
FCH070N60E Rev. 1.0
FCH070N60E — N-Channel SuperFET® II Easy-Drive MOSFET
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®
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